CN102691044A - Electrode magnetron sputtering process of NTC temperature sensor - Google Patents
Electrode magnetron sputtering process of NTC temperature sensor Download PDFInfo
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- CN102691044A CN102691044A CN201110070234XA CN201110070234A CN102691044A CN 102691044 A CN102691044 A CN 102691044A CN 201110070234X A CN201110070234X A CN 201110070234XA CN 201110070234 A CN201110070234 A CN 201110070234A CN 102691044 A CN102691044 A CN 102691044A
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Abstract
The present invention discloses an electrode magnetron sputtering process of an NTC temperature sensor, and the process comprises the following process steps of: (1) conducting cleaning treatment on the surface of a semiconductor sensitive ceramic substrate, then performing heating and drying for standby use, with the temperature controlled at 190-210DEG C; (2) carrying out magnetron sputtering: putting the semiconductor sensitive ceramic substrate in the vacuum chamber of a multi-target facing target magnetron sputtering device, employing different target materials respectively to implement target material deposition on the semiconductor sensitive ceramic substrate, thus making a transition layer and an electrode film layer attached to the surface of the semiconductor sensitive ceramic substrate in order. The NTC temperature sensor made by the process of the invention has high density and resistance precision, uniform thickness, and is exempt from environmental influence, and no electrode ion migration can occur, so that product reliability and stability are greatly improved.
Description
Technical field
The invention belongs to the TP technology, relate in particular to a kind of production technique of subtend target magnetic control sputtering preparation temperature sensor electrode.
Background technology
Existing NTC temperature sensor chip electrode materials is a silver, and process method is for printing its defective: thickness of electrode>1 μ m, and thick book error ± 20%, cause the product resistance accuracy>± 5%.Chinese patent 200410074623.X discloses a kind of soft-magnetic ferrite core magnetron sputtering vacuum plating silver method; At first soft-magnetic ferrite core is placed in the vacuum oven and heats, it is characterized in that also comprising the following steps: that a. bombards cleaning with stainless target to soft-magnetic ferrite core at negative bias 300-400V; B. with stainless target soft-magnetic ferrite core is plated transition layer 0.5-1 micron at negative bias 50-80V; C. alternately plate stainless steel rete and silver film at negative bias 50-80V, thickness is the 1-2 micron; D. at negative bias 50-80V plating fine silver rete 3-5 micron; E. at negative bias 0V plating fine silver rete 0.5-1 micron.Soft-magnetic ferrite core is through the sedimentary silver electrode of this method, and thickness 5-8 micron is saved starting material greatly than the 20-30 micron coating film thickness of chemical process, can resist 420 ℃ of tin stove welding more than 4 minutes, and 90% silver electrode still can be welded.The influence of envrionment conditions of being used such as humidity and corrosive gases, the electrode silver ions can move, and causes product performance to worsen, and reliability and stability descend.
Summary of the invention
The purpose of this invention is to provide a kind of NTC TP magnetron sputtering electrode process; The NTC TP that utilizes this technology to make has higher density and resistance accuracy; Thick book is even; The environmental influence that is not used, the electrode ion does not move, the reliability and stability of greatly enhancing product performance.
The present invention realizes through following technical scheme: NTC TP magnetron sputtering electrode process comprises following process step:
1. clean---semi-conductor sensitive ceramic substrate surface carried out clean after, heating, drying is subsequent use, 200 ± 10 ℃ of temperature controls;
2. magnetron sputtering: above-mentioned semi-conductor sensitive ceramic substrate is placed the Vakuumkammer of many target position subtend target magnetic control sputtering equipment, is 99.99% argon Ar or N with quality purity
2As working gas, working vacuum degree 0.1-1 Pa, sputter is carried out the target deposition with different targets to semi-conductor sensitive ceramic substrate respectively apart from 80-120mm, makes semi-conductor sensitive ceramic substrate surface adhere to transition layer and electrode thin film layer successively.
The transition layer target of being selected for use is chromium or is followed successively by chromium and copper, described transition layer target deposit thickness 0.1-0.7 micron, and the electrode thin film layer target of being selected for use is gold, described electrode thin film layer target deposit thickness 0.05-0.1 micron.
The quality purity of the target of being selected for use is 99.99%.
Sputtering current 8-the 12A of described transition layer target, gas flow 42---65ml/min.
The sputtering current 4-6A of described electrode thin film layer target, gas flow 42---55ml/min.
The TP electrode film thickness that advantage of the present invention: ⑴ adopts the facing-target magnetron sputtering system method to obtain is even, purity is high; Tack is good between film and the substrate; The diameter of particle that constitutes film is more even, realizes the nanoparticle film easily, easy control of process conditions.The ⑵ thickness of electrode 0.8 μ m, and density is high, and thick book is even, and < ± 10%, the product resistance accuracy is brought up to 0.5%--1% to error.⑶ improved the reliability and stability of product performance.
Description of drawings
Fig. 1 is the enlarged diagram of the NTC TP electrode structure of embodiment of the invention preparation.
Sequence number among the figure: 1, semi-conductor sensitive ceramic substrate, 2, transition layer, 3, electrode thin film layer.
Embodiment
Embodiment 1:
A kind of NTC TP magnetron sputtering electrode process; Comprise following process step: employing thickness is 0.3mm, long 0.5mm, the semi-conductor sensitive ceramic substrate 1 of wide 0.5mm; Following clean is carried out on semi-conductor sensitive ceramic substrate 1 surface: with soaking ultrasonic cleaning in the deionized water solution; Again semi-conductor sensitive ceramic substrate 1 is put into high-purity IPA solution immersion and remove surface blot, ultrasonic cleaning 5 minutes is after the ionized water flushing; Semi-conductor sensitive ceramic substrate 1 heating, drying is subsequent use, 200 ± 10 ℃ of temperature controls;
Magnetron sputtering: above-mentioned semi-conductor sensitive ceramic substrate 1 is placed the Vakuumkammer of many target position subtend target magnetic control sputtering equipment, with quality purity be 99.99% argon gas as working gas, working vacuum degree 0.1-1 Pa; Sputter is apart from 80-120mm, with different targets semi-conductor sensitive ceramic substrate 1 carried out the target deposition respectively: be that 99.99% Cr is as 0.1 micron of target deposition, sputtering current 10A with quality purity; Sputter rate 12.5nm/ minute, sputtering time 15 minutes, gas flow 58ml/min; Be that 99.99% Cu is as 0.6 micron of target deposition with quality purity again; Sputtering current 10A, sputter rate 12.5nm/ minute, sputtering time 20 minutes; Gas flow 48ml/min obtains NTC TP transition layer 2; Be that 99.99% Au is as 0.05 micron of target deposition, sputtering current 5A, sputter rate 12.5nm/ minute with quality purity; Sputtering time 3 minutes; 48 ml/min, 200 ℃ of semi-conductor sensitive ceramic substrate 1 temperature obtain NTC TP electrode thin film layer 3.With the welding of above-mentioned gained TP electrode package get final product the product temperature transmitter.
Embodiment 2:
A kind of NTC TP magnetron sputtering electrode process; Comprise following process step: employing thickness is 1mm, long 2.5mm, the semi-conductor sensitive ceramic substrate 1 of wide 2.5mm; Following clean is carried out on semi-conductor sensitive ceramic substrate 1 surface: with soaking ultrasonic cleaning in the deionized water solution; Again semi-conductor sensitive ceramic substrate 1 is put into the ethanol solution immersion and remove surface blot, ultrasonic cleaning 5 minutes is after the ionized water flushing; Semi-conductor sensitive ceramic substrate 1 heating, drying is subsequent use, 200 ± 10 ℃ of temperature controls;
Magnetron sputtering: above-mentioned semi-conductor sensitive ceramic substrate 1 is placed the Vakuumkammer of many target position subtend target magnetic control sputtering equipment, with quality purity be 99.99% argon gas as working gas, working vacuum degree 0.1-1 Pa; Sputter is apart from 80-120mm, with different targets semi-conductor sensitive ceramic substrate 1 carried out the target deposition respectively: be that 99.99% Cr is as 0.2 micron of target deposition, sputtering current 9A with quality purity; Sputter rate 12.5nm/ minute, sputtering time 15 minutes, gas flow 58ml/min; Be that 99.99% Cu is as 0.7 micron of target deposition with quality purity again; Sputtering current 9A, sputter rate 12.5nm/ minute, sputtering time 20 minutes; Gas flow 48ml/min obtains NTC TP transition layer 2; With quality purity be 99.99% Au as 0.1 micron of target deposition, sputtering current 4A, sputter rate 12.5nm/ minute, sputtering time 3 minutes, 48 ml/min obtain the TP electrode thin film layer.Sample is put into high-temperature heater thermal treatment, in dry air, is heated to 200 ℃, thereby obtain the TP electrode, welded encapsulation get final product the product temperature transmitter.
Embodiment is just for the ease of understanding technical scheme of the present invention; Do not constitute restriction to protection domain of the present invention; Every interior any simple modification, equivalent variations and modification of perhaps according to technical spirit of the present invention above scheme being done that does not break away from technical scheme of the present invention all still belongs within the protection domain of the present invention.
Claims (7)
1.NTC TP magnetron sputtering electrode process comprises following process step:
1. clean---semi-conductor sensitive ceramic substrate ⑴ surface carried out clean after, heating, drying is subsequent use, 200 ± 10 ℃ of temperature controls;
2. magnetron sputtering: above-mentioned semi-conductor sensitive ceramic substrate ⑴ is placed the Vakuumkammer of many target position subtend target magnetic control sputtering equipment, is 99.99% argon Ar or N with quality purity
2As working gas, working vacuum degree 0.1-1 Pa, sputter is carried out the target deposition with different targets to semi-conductor sensitive ceramic substrate ⑴ respectively apart from 80-120mm, makes semi-conductor sensitive ceramic substrate ⑴ surface adhere to transition layer ⑵ and electrode thin film layer ⑶ successively.
2. NTC TP magnetron sputtering electrode process according to claim 1; It is characterized in that: the transition layer ⑵ target of being selected for use is chromium or is followed successively by chromium and copper; Described transition layer ⑵ target deposit thickness 0.1-0.7 micron; The electrode thin film layer ⑶ target of being selected for use is gold, described electrode thin film layer ⑶ target deposit thickness 0.05-0.1 micron.
3. NTC TP magnetron sputtering electrode process according to claim 1 and 2, it is characterized in that: the quality purity of the target of being selected for use is 99.99%.
4. NTC TP magnetron sputtering electrode process according to claim 1 and 2 is characterized in that: the sputtering current 8-12A of described transition layer ⑵ target, gas flow 42---65ml/min.
5. NTC TP magnetron sputtering electrode process according to claim 1 and 2 is characterized in that: the sputtering current 4-6A of described electrode thin film layer ⑶ target, gas flow 42---55ml/min.
6. NTC TP magnetron sputtering electrode process according to claim 3 is characterized in that: the sputtering current 8-12A of described transition layer ⑵ target, gas flow 42---65ml/min.
7. NTC TP magnetron sputtering electrode process according to claim 3 is characterized in that: the sputtering current 4-6A of described electrode thin film layer ⑶ target, gas flow 42---55ml/min.
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| CN201110070234XA CN102691044A (en) | 2011-03-23 | 2011-03-23 | Electrode magnetron sputtering process of NTC temperature sensor |
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| CN201110070234XA CN102691044A (en) | 2011-03-23 | 2011-03-23 | Electrode magnetron sputtering process of NTC temperature sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109461556A (en) * | 2018-11-15 | 2019-03-12 | 中国科学院新疆理化技术研究所 | A kind of preparation method of the Ohm contact electrode of p-type negative temperature coefficient ceramics material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3538286A1 (en) * | 1984-12-29 | 1986-07-03 | Ogawa Chemical Industries, Ltd., Tokio/Tokyo | Mechanical pen |
| US4712085A (en) * | 1984-10-30 | 1987-12-08 | Tdk Corporation | Thermistor element and method of manufacturing the same |
| CN101635203A (en) * | 2008-07-27 | 2010-01-27 | 比亚迪股份有限公司 | Semiconductor electrode, manufacture method thereof and solar cell containing same |
-
2011
- 2011-03-23 CN CN201110070234XA patent/CN102691044A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4712085A (en) * | 1984-10-30 | 1987-12-08 | Tdk Corporation | Thermistor element and method of manufacturing the same |
| DE3538286A1 (en) * | 1984-12-29 | 1986-07-03 | Ogawa Chemical Industries, Ltd., Tokio/Tokyo | Mechanical pen |
| CN101635203A (en) * | 2008-07-27 | 2010-01-27 | 比亚迪股份有限公司 | Semiconductor electrode, manufacture method thereof and solar cell containing same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109461556A (en) * | 2018-11-15 | 2019-03-12 | 中国科学院新疆理化技术研究所 | A kind of preparation method of the Ohm contact electrode of p-type negative temperature coefficient ceramics material |
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Application publication date: 20120926 |