CN102691037B - Gallium-doped zinc oxide film, and preparation method and application thereof - Google Patents
Gallium-doped zinc oxide film, and preparation method and application thereof Download PDFInfo
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Abstract
The invention relates to the field of semiconducting material preparation, and provides a preparation method of a gallium-doped zinc oxide film. The method comprises the following steps: mixing Ga2O3 powder and ZnO powder with the mass ratio of Ga2O3 powder to ZnO powder being 1/1999 to 1/99, and sintering the mixture as a GZO target material; filling the GZO target material into a magnetron sputtering cavity, carrying out vacuumizing, with the working pressure set as 0.2 Pa to 1.5 Pa, the inert gas flow as 15sccm to 35sccm, and sputtering power of the GZO layer as 60 to 160 W, and sputtering to obtain the gallium-doped zinc oxide film; and annealing the above prepared gallium-doped zinc oxide film, with the annealing atmosphere being a mixed gas of an inert gas and hydrogen gas, wherein the molar volume percentage content of the hydrogen gas in the mixed gas is 5% to 30% and the annealing temperature is 200 DEG C to 600 DEG C. The invention further provides the gallium-doped zinc oxide film prepared by the method and an application of the gallium-doped zinc oxide film in semiconductor photoelectric devices.
Description
Technical field
The invention belongs to photoelectric semiconductor material preparation field, be specifically related to a kind of preparation method of gallium-doped zinc oxide film and the film of preparation and application.
Background technology
Transparent conductive film is optical clear performance and conductivity to be compounded in to the photoelectric material of one, because it has excellent photoelectric characteristic, becomes study hotspot and advanced subject in recent years.Although ito thin film is a kind of transparent conductive film material that current comprehensive photoelectric properties is excellent, be most widely used, but indium is poisonous, expensive, poor stability, the problem such as in hydrogen plasma atmosphere, be easily reduced, people try hard to find a kind of ITO replacement material of cheap and excellent performance.Wherein, gallium-doped zinc oxide (Ga-doped ZnO is called for short GZO film) has material cheapness, nontoxic, can, with features such as the comparable electricity of ITO and optical properties, become the most competitive transparent conductive film material.
Adopt magnetically controlled sputter method to prepare GZO film, have that sedimentation rate is high, underlayer temperature is relatively low, film tack is good, easy to control and can realize the advantages such as big area deposition, thereby become most study in current suitability for industrialized production, a ripe and the most most widely used method of technique.But, under high deposition rate and low underlayer temperature, allow to obtain within a short period of time that tack is good, the uniform sample of film forming, be also difficult to avoid GZO thin film crystallization second-rate, the unsettled problem of electroconductibility.
Summary of the invention
Technical problem to be solved by this invention is to overcome the defect of prior art, and the preparation method of a kind of gallium-doped zinc oxide (GZO) film and film and the application of preparation thereof are provided.
The embodiment of the present invention is achieved in that first aspect provides a kind of preparation method of gallium-doped zinc oxide film, and it comprises the steps:
By Ga
2o
3powder and ZnO powder mix, and sintering is as GZO target, described Ga
2o
3the mass ratio of powder and described ZnO powder is 1/1999～1/99;
Described GZO target is packed in magnetron sputtering cavity, vacuumize, it is 0.2Pa～1.5Pa that operating pressure is set, and inert gas flow is 15sccm～35sccm, and sputtering power is 60W～160W, and sputter obtains gallium-doped zinc oxide film;
The above-mentioned gallium-doped zinc oxide film making is carried out to anneal, and annealing atmosphere is the mixed gas of rare gas element and hydrogen, and wherein, the molecular volume percentage composition of hydrogen is 5%～30%, and annealing temperature is 200 ℃～600 ℃.
The gallium-doped zinc oxide film that another object of the embodiment of the present invention is to provide the preparation method of above-mentioned gallium-doped zinc oxide film to obtain.
Another object of the embodiment of the present invention is to provide the application of above-mentioned gallium-doped zinc oxide film in semiconductor photoelectric device.
The embodiment of the present invention be take GZO as target, adopts magnetron sputtering method, and sputter obtains gallium-doped zinc oxide film, and it has, and sedimentation rate is high, film tack is good, easy to control and can realize the advantages such as big area deposition.Further, the mixed gas by introducing rare gas element and hydrogen, to the GZO film the obtaining aftertreatment of annealing, reaches the object that improves thin film crystallization quality, increases electroconductibility, steady resistance rate.
Accompanying drawing explanation
Fig. 1 is preparation method's the schema of the gallium-doped zinc oxide film of the embodiment of the present invention;
Fig. 2 is the change in resistance curve that different hydrogen content annealing of the present invention obtains gallium-doped zinc oxide film;
Fig. 3 is the X-ray diffractogram that different annealing temperature annealing of the present invention obtains gallium-doped zinc oxide film;
Fig. 4 is that the gallium-doped zinc oxide film of the embodiment of the present invention 2 is at the transmitted light spectrogram of ultraviolet-visible optical wavelength range;
Fig. 5 is that the gallium-doped zinc oxide film of the embodiment of the present invention 2 preparations is used the resistance change curve after 48 hours under different use temperatures.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is described in further detail.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Refer to Fig. 1, the preparation method of a kind of gallium-doped zinc oxide film of the embodiment of the present invention is shown, it comprises the steps:
S01: by Ga
2o
3powder and ZnO powder mix, and sintering is as GZO target, described Ga
2o
3the mass ratio of powder and described ZnO powder is 1/1999～1/99;
S02: described GZO target is packed in magnetron sputtering cavity, vacuumize, it is 0.2Pa～1.5Pa that operating pressure is set, and inert gas flow is 15sccm～35sccm, and sputtering power is 60W～160W, and sputter obtains gallium-doped zinc oxide film;
S03: the above-mentioned gallium-doped zinc oxide film making is carried out to anneal, and annealing atmosphere is the mixed gas of rare gas element and hydrogen, wherein, the molecular volume percentage composition of hydrogen is 5%～30%, annealing temperature is 200 ℃～600 ℃.
In step S01, by Ga
2o
3sintering at 900 ℃～1350 ℃ temperature, obtains GZO ceramic target.Preferably, Ga
2o
3the mass ratio of powder and ZnO powder is 1/1000～1/300.In a preferred embodiment of the invention, GZO target is selected Ga
2o
3the mass ratio of powder and ZnO powder is 1/333.After ZnO doping Ga, at the bottom of conduction band, occur free carrier---the electronics of being contributed by Ga atom in a large number, obviously improved specific conductivity, improved the conductivity of ZnO, improved film quality, but the excessive concentration of the Ga that adulterates can cause ZnO crystalline quality to decline.In the present invention, adopt the Ga doping of low concentration, select suitable magnetron sputtering condition and aftertreatment, just can obtain the transparent conductive film of excellent performance.
In step S02, sputter gallium-doped zinc oxide film can be selected the conventional substrates such as quartz substrate, Sapphire Substrate.Before using, use acetone, dehydrated alcohol and deionized water supersound washing, and dry up with high pure nitrogen.The distance of target and substrate is preferably 40mm～70mm.Target vacuumizes after packing in sputter cavity, with mechanical pump or molecular pump, the vacuum tightness of cavity is evacuated to 1.0 * 10
-3pa～1.0 * 10
-5more than Pa, be preferably 6.0 * 10
-4pa.The gallium-doped zinc oxide film that obtains excellent performance, processing condition arrange extremely important.Inert gas flow is preferably 18sccm～25sccm, and operating pressure is preferably 0.8Pa～1.2Pa, and sputtering power is preferably 80W～120W, and substrate is without heating.The thickness of film is generally 150nm～500nm.
In step S03, the gallium-doped zinc oxide film making under above-mentioned specific process conditions is carried out to anneal, anneal comprises the process that gallium-doped zinc oxide film is warming up to annealing temperature insulation.Annealing atmosphere is the mixed gas of rare gas element and hydrogen, and hydrogen can increase conductivity, and rare gas element can prevent the impacts such as oxygen, nitrogen and carbonic acid gas, also reduces the danger of only using hydrogen explosion simultaneously.In anneal process, the composition of anneal gas, temperature, soaking time and temperature rise rate all affect the performance of last gained gallium-doped zinc oxide film.Preferably, the molecular volume percentage composition of hydrogen is 10%～20%, and annealing temperature is 450 ℃～500 ℃.Annealing heats up and to be difficult for too fastly or excessively slow, and temperature rise rate is 1 ℃/min～10 ℃/min, and preferably, temperature rise rate is 4 ℃/min～6 ℃/min.Be warming up to after annealing temperature, keep 0.5h～5h, preferably, keep 2h～3h.Annealing has improved the crystalline quality of film, increases film conductivity, and steady resistance makes a small amount of Ga doping just can reduce electric conductivity, avoids it to affect the crystalline quality of ZnO.
The gallium-doped zinc oxide film that the embodiment of the present invention also provides the preparation method of the many gallium-doped zinc oxides film described in a kind of employing to prepare, it uses after 48 hours in 0 ℃～300 ℃, and resistance change rate is less than 15%.
And the application of above-mentioned gallium-doped zinc oxide film in preparing semiconductor photoelectric device, be mainly the application in the transparency electrode of transparent heating element, antistatic, electromagnetic wave proof film, sun power.
The preparation method of the gallium-doped zinc oxide film that the embodiment of the present invention provides, adopts magnetron sputtering method, and sputter gallium-doped zinc oxide film, has realized the at utmost reduction of sheet resistance, remains on the high permeability of visible region simultaneously.And, adopt the mixed gas of rare gas element and hydrogen to carry out anneal to the gallium-doped zinc oxide film to sputter gained, can increase the conductivity of transparent conductive film, make less Ga doping ZnO just can reduce resistance simultaneously.
Below in conjunction with specific embodiment, specific implementation of the present invention is described in detail:
Embodiment 1:
Select Ga
2o
3: ZnO=1: 999 (mass ratio) powder, after even mixing, 1250 ℃ of high temperature sinterings become the ceramic target of Φ 60 * 2mm, and GZO target is packed in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning quartz substrate, and dry up with high pure nitrogen, put into vacuum cavity.The distance of target and substrate is set as to 50mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 6.0 * 10
-4pa, passes into the argon gas of 20sccm, and pressure is adjusted to 1.0Pa.The sputtering power 100W of GZO target, sputter obtains gallium-doped zinc oxide film, and through test, its resistivity is 2.5 * 10
-2Ω cm.Again gained gallium-doped zinc oxide film is carried out to anneal through the mixed gas of argon gas and hydrogen, wherein, the molecular volume percentage composition of hydrogen is 5%, and annealing temperature is 300 ℃, and temperature rise rate is 3 ℃/min, and soaking time is 3h.The resistivity of the gallium-doped zinc oxide film after anneal is 2.5 * 10
-3Ω cm.
Embodiment 2:
Select Ga
2o
3: ZnO=1: 999 (mass ratio) powder, after even mixing, 1250 ℃ of high temperature sinterings become the ceramic target of Φ 60 * 2mm, and GZO target is packed in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning quartz substrate, and dry up with high pure nitrogen, put into vacuum cavity.The distance of target and substrate is set as to 50mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 6.0 * 10
-4pa, passes into the argon gas of 20sccm, and pressure is adjusted to 1.0Pa.The sputtering power 100W of GZO target, sputter obtains gallium-doped zinc oxide film.Again gained gallium-doped zinc oxide film is carried out to anneal through the mixed gas of argon gas and hydrogen, wherein, the molecular volume percentage composition of hydrogen is 15%, and annealing temperature is 450 ℃, and temperature rise rate is 4 ℃/min, and soaking time is 3h.The resistivity of the gallium-doped zinc oxide film after anneal is 4.5 * 10
-4Ω cm.
Embodiment 3:
Select Ga
2o
3: ZnO=1: 999 (mass ratio) powder, after even mixing, 1250 ℃ of high temperature sinterings become the ceramic target of Φ 60 * 2mm, and GZO target is packed in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning quartz substrate, and dry up with high pure nitrogen, put into vacuum cavity.The distance of target and substrate is set as to 50mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 6.0 * 10
-4pa, passes into the argon gas of 20sccm, and pressure is adjusted to 1.0Pa.The sputtering power 100W of GZO target, sputter obtains gallium-doped zinc oxide film.Again gained gallium-doped zinc oxide film is carried out to anneal through the mixed gas of argon gas and hydrogen, wherein, the molecular volume percentage composition of hydrogen is 20%, and annealing temperature is 450 ℃, and temperature rise rate is 5 ℃/min, and soaking time is 3h.The resistivity of the gallium-doped zinc oxide film after anneal is 8.7 * 10
-4Ω cm.
Embodiment 4:
Select Ga
2o
3: ZnO=1: 999 (mass ratio) powder, after even mixing, 1250 ℃ of high temperature sinterings become the ceramic target of Φ 60 * 2mm, and GZO target is packed in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning quartz substrate, and dry up with high pure nitrogen, put into vacuum cavity.The distance of target and substrate is set as to 50mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 6.0 * 10
-4pa, passes into the argon gas of 20sccm, and pressure is adjusted to 1.0Pa.The sputtering power 100W of GZO target, sputter obtains gallium-doped zinc oxide film.Again gained gallium-doped zinc oxide film is carried out to anneal through the mixed gas of argon gas and hydrogen, wherein, the molecular volume percentage composition of hydrogen is 25%, and annealing temperature is 600 ℃, and temperature rise rate is 6 ℃/min, and soaking time is 3h.The resistivity of the gallium-doped zinc oxide film after anneal is 8.7 * 10
-4Ω cm.
Embodiment 5:
Select Ga
2o
3: ZnO=1: 99 (mass ratio) powder, after even mixing, 1250 ℃ of high temperature sinterings become the ceramic target of Φ 60 * 2mm, and GZO target is packed in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning quartz substrate, and dry up with high pure nitrogen, put into vacuum cavity.The distance of target and substrate is set as to 60mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 6.0 * 10
-4pa, passes into the argon gas of 15sccm, and pressure is adjusted to 0.2Pa.The sputtering power 60W of GZO target, sputter obtains gallium-doped zinc oxide film.Again gained gallium-doped zinc oxide film is carried out to anneal through the mixed gas of argon gas and hydrogen, wherein, the molecular volume percentage composition of hydrogen is 5%, and annealing temperature is 200 ℃, and temperature rise rate is 1 ℃/min, and soaking time is 5h.The resistivity of the gallium-doped zinc oxide film after anneal is 103 * 10
-4Ω cm.
Embodiment 6:
Select Ga
2o
3: ZnO=1: 1999 (mass ratio) powder, after even mixing, 1250 ℃ of high temperature sinterings become the ceramic target of Φ 60 * 2mm, and GZO target is packed in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning quartz substrate, and dry up with high pure nitrogen, put into vacuum cavity.The distance of target and substrate is set as to 50mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 6.0 * 10
-4pa, passes into the argon gas of 35sccm, and pressure is adjusted to 2.0Pa.The sputtering power 160W of GZO target, sputter obtains gallium-doped zinc oxide film.Again gained gallium-doped zinc oxide film is carried out to anneal through the mixed gas of argon gas and hydrogen, wherein, the molecular volume percentage composition of hydrogen is 30%, and annealing temperature is 600 ℃, and temperature rise rate is 10 ℃/min, and soaking time is 2h.The resistivity of the gallium-doped zinc oxide film after anneal is 15 * 10
-4Ω cm.
Embodiment 7:
Select Ga
2o
3: ZnO=1: 600 (mass ratio) powder, after even mixing, 1250 ℃ of high temperature sinterings become the ceramic target of Φ 60 * 2mm, and GZO target is packed in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning quartz substrate, and dry up with high pure nitrogen, put into vacuum cavity.The distance of target and substrate is set as to 50mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 6.0 * 10
-4pa, passes into the argon gas of 20sccm, and pressure is adjusted to 0.8Pa.The sputtering power 120W of GZO target, sputter obtains gallium-doped zinc oxide film.Again gained gallium-doped zinc oxide film is carried out to anneal through the mixed gas of argon gas and hydrogen, wherein, the molecular volume percentage composition of hydrogen is 10%, and annealing temperature is 300 ℃, and temperature rise rate is 8 ℃/min, and soaking time is 4h.The resistivity of the gallium-doped zinc oxide film after anneal is 54 * 10
-4Ω cm.
Embodiment 8:
Select Ga
2o
3: ZnO=1: 600 (mass ratio) powder, after even mixing, 1250 ℃ of high temperature sinterings become the ceramic target of Φ 60 * 2mm, and GZO target is packed in vacuum cavity.Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning quartz substrate, and dry up with high pure nitrogen, put into vacuum cavity.The distance of target and substrate is set as to 50mm.With mechanical pump and molecular pump, the vacuum tightness of cavity is extracted into 6.0 * 10
-4pa, passes into the argon gas of 30sccm, and pressure is adjusted to 1.2Pa.The sputtering power 800W of GZO target, sputter obtains gallium-doped zinc oxide film.Again gained gallium-doped zinc oxide film is carried out to anneal through the mixed gas of argon gas and hydrogen, wherein, the molecular volume percentage composition of hydrogen is 20%, and annealing temperature is 400 ℃, and temperature rise rate is 4 ℃/min, and soaking time is 4h.The resistivity of the gallium-doped zinc oxide film after anneal is 37 * 10
-4Ω cm.
Fig. 2 is that in the gallium-doped zinc oxide film of the embodiment of the present invention 2 preparation and anneal gas, hydrogen content is the gallium-doped zinc oxide film (all the other preparation conditions are identical with embodiment 2) that obtains respectively under 5%, 10%, 25% and 30% environment and the change curve of film resiativity.As can be seen from the figure,, when the molecular volume percentage composition of hydrogen is 10%～15%, all can obtain the gallium-doped zinc oxide film of low resistivity.The test of resistivity is to be measured by four point probe resistance meter, by measuring the square resistance of film and the thickness of film multiplies each other, obtains resistivity.
The X-ray diffractogram of Fig. 3 gallium-doped zinc oxide film (all the other preparation conditions are identical with embodiment 2) that to be the gallium-doped zinc oxide film of the embodiment of the present invention 2 preparation and annealing temperature obtain under 300 ℃, 400 ℃, 450 ℃, 500 ℃ and 600 ℃.In figure, show, along with the rising of annealing temperature, the strength decreased of (002) diffraction peak, halfwidth narrows down, and annealing temperature raises and obviously improves the crystalline quality of film.Can be calculated: in 300 ℃～600 ℃ annealing regions, the grain-size of film is increased to 500nm by 20nm.
Fig. 4 be the gallium-doped zinc oxide film of the embodiment of the present invention 2 at the transmitted light spectrogram of ultraviolet-visible optical wavelength range, it demonstrates prepared gallium-doped zinc oxide film can reach 90% in the transmitance of ultraviolet-visible optical wavelength range.
Fig. 5 is that the gallium-doped zinc oxide film of embodiment 2 preparations is used the resistance change curve of 48 hours under different use temperatures.Resistance change rate is that gallium-doped zinc oxide film heated after 48 hours under figure temp. displaying function, the new square resistance R being obtained by four point probe test
1, this resistance value and former resistance value R
0poor, then obtain divided by former resistance; Be resistance change rate R%=(R
1-R
0)/
r0.In figure, demonstrate, at 300 ℃, use 48 hours resistance change rates to be less than 15%, reached the standard of performance of suitability for industrialized production.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. a preparation method for gallium-doped zinc oxide film, is characterized in that, described method comprises the steps:
By Ga
2o
3powder and ZnO powder mix, and sintering is as Φ 60 * 2mmGZO target, described Ga
2o
3the mass ratio of powder and described ZnO powder is 1/1000～1/300;
Described GZO target is packed in magnetron sputtering cavity, be evacuated to 6.0 * 10
-4pa～1.0 * 10
-5pa, it is 0.2Pa～1.5Pa that operating pressure is set, and inert gas flow is 15sccm～35sccm, and sputtering power is 60W～120W, and sputter obtains gallium-doped zinc oxide film;
The above-mentioned gallium-doped zinc oxide film making is carried out to anneal, annealing atmosphere is the mixed gas of rare gas element and hydrogen, wherein, in described mixed gas, the molecular volume percentage composition of hydrogen is 10%～20%, annealing temperature is 200 ℃～600 ℃, the soaking time of annealing is 0.5h～5h, and the temperature rise rate that is warming up to annealing temperature is 4 ℃/min～6 ℃/min.
2. the preparation method of gallium-doped zinc oxide film as claimed in claim 1, is characterized in that, described annealing temperature is 450 ℃～500 ℃.
3. the preparation method of gallium-doped zinc oxide film as claimed in claim 1, is characterized in that, the soaking time of described annealing is 2h～3h, and described temperature rise rate is 4 ℃/min～6 ℃/min.
4. as claims 1 to 3, select the preparation method of the gallium-doped zinc oxide film as described in, it is characterized in that, in the process of described sputter, inert gas flow is 18sccm～25sccm, and the operating pressure of cavity is 0.8Pa～1.2Pa, and sputtering power is 80W～120W.
5. the gallium-doped zinc oxide film that the preparation method of the gallium-doped zinc oxide film as described in as arbitrary in claim 1～4 makes.
6. gallium-doped zinc oxide film as claimed in claim 5, is characterized in that, described gallium-doped zinc oxide film 0 ℃～300 ℃ use 48 hours after resistance change rate be less than 15%.
7. the application of gallium-doped zinc oxide film as claimed in claim 6 in semiconductor photoelectric device.
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| CN102191465A (en) * | 2010-03-18 | 2011-09-21 | 中国科学院福建物质结构研究所 | Indium-doped zinc oxide target material and preparation method of transparent conducting film |
| WO2012129757A1 (en) * | 2011-03-25 | 2012-10-04 | 海洋王照明科技股份有限公司 | Multi-elements-doped zinc oxide film, manufacturing method and application thereof |
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| WO2012129757A1 (en) * | 2011-03-25 | 2012-10-04 | 海洋王照明科技股份有限公司 | Multi-elements-doped zinc oxide film, manufacturing method and application thereof |
Non-Patent Citations (4)
| Title |
|---|
| 不同退火工艺对AZO膜性能的影响;闫都伦等;《真空》(第01期);37页左栏倒数1-2段，38页右栏1-3行 * |
| 真空退火对溅射淀积ZnO:Ga透明导电膜性能的影响;马瑾等;《稀有金属材料与工程》;20050730(第07期);1166页实验部分 * |
| 闫都伦等.不同退火工艺对AZO膜性能的影响.《真空》.(第01期), |
| 马瑾等.真空退火对溅射淀积ZnO:Ga透明导电膜性能的影响.《稀有金属材料与工程》.2005,(第07期), |
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