CN102684607A - Metamaterial space modulator - Google Patents
Metamaterial space modulator Download PDFInfo
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- CN102684607A CN102684607A CN2011100617455A CN201110061745A CN102684607A CN 102684607 A CN102684607 A CN 102684607A CN 2011100617455 A CN2011100617455 A CN 2011100617455A CN 201110061745 A CN201110061745 A CN 201110061745A CN 102684607 A CN102684607 A CN 102684607A
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Abstract
The invention relates to a metamaterial space modulator which comprises a base material and a plurality of metal micro structures arranged on the base material. Each metal micro structure is provided with a semiconductor element, all the semiconductors are electrically connected a voltage source, and the voltage source can generate simulation voltage signals and load the simulation voltage signals on each semiconductor unit. The metamaterial space modulator is capable of reducing non-linear distortion due to the fact that power amplification is not required after modulation.
Description
Technical field
The present invention relates to a kind of device that is used for the electromagnetic wave modulation, relate to a kind of ultra material space modulator particularly.
Background technology
In recent years; The development of global communication technology is maked rapid progress; Especially development of wireless communication devices speed and application have surpassed the fixed communication technology, demonstrate situation like a raging fire, and wherein the most representative is cellular mobile communication and broadband wireless access.
Transmitter in the wireless communication system is exactly can signal be transmitted into the device in the space by certain frequency.The principle that generally adopts at present be data-modulated that institute will be transmitted to the carrier wave of certain frequency, and then, launch by antenna at last through the power amplifier amplification.Power amplifier is the significant components of dispensing device in the communication system; It generally is used for the final stage of transmitter; Effect is that modulated signal is carried out power amplification; To satisfy the requirement of transmitted power, guarantee that the receiver in certain zone can receive satisfied signal level, and do not disturb the communication of adjacent channel.
Power amplifier is integrated by the nonlinear crystal pipe, can be known by transistorized physical characteristic, and near transistor is operated in non-cut-off region or during the saturation region, the output signal will be limited, thereby produce nonlinear distortion.Nonlinear distortion not only can cause the loss of useful signal, and signal quality is reduced, and can introduce interference signal simultaneously, directly causes the lower of power amplifier power output and efficient.So design wireless transmitting system the very important point is exactly the nonlinear distortion of reduction system.At present, all be to reduce non-linear interference both at home and abroad through the indoor design that improves power amplifier, can not tackle the problem at its root.
Particularly the signal demand secondary after ovennodulation amplifies in the reflector, the serious nonlinear distortion composition that exists in the bandwidth signal after the amplification, the i.e. harmonic components and the intermodulation composition of carrier signal and former data-signal generation.
Summary of the invention
The technical problem that the present invention will solve is, to the serious problem of the signal non-linear distortion after the transmitter modulation in the existing wireless communication system, a kind of ultra material space modulator that can effectively reduce nonlinear distortion is provided.
The technical solution adopted for the present invention to solve the technical problems is: said ultra material space modulator comprises base material and is arranged on a plurality of metal micro structures on the base material; All be provided with semiconductor element on each metal micro structure; All semiconductor elements are electrically connected with a voltage source; Said voltage source can produce analog voltage signal, and analog voltage signal is loaded on each semiconductor element.
The carrier wave of the outside that is produced by carrier generator further, amplifies the back through power amplifier and is launched to ultra material space modulator by transmitting antenna.
Further, said carrier generator is the microlock source.
Further; Said voltage source is a digital to analog converter; It converts digital signal into analog voltage signal, and said digital to analog converter is electrically connected with semiconductor element on each metal micro structure through lead, so that analog voltage signal is loaded on each semiconductor element.
Further, said semiconductor element is resistance, inductance or electric capacity.
Further, said semiconductor element is attached on the metal micro structure.
Further, said semiconductor element is the SMD variable capacitance that is attached on the metal micro structure.
Further, said metal micro structure for through etching, plating, brill quarter, photoetching, electronics is carved or ion is carved method attached to the metal wire on the plate shape substrates with specific pattern.
Further, said metal micro structure is the single radial cut straight-flanked ring, and said semiconductor element is attached to the opening part of said single radial cut straight-flanked ring and the two ends of connection opening.
Further, said metal wire is copper cash or silver-colored line.
Further, said base material is piled up by a plurality of plate shape substrates and forms, and all is attached with a plurality of metal micro structures on each plate shape substrates.
Further, said plate shape substrates is made by ceramic material, epoxy resin or polytetrafluoroethylene.
Further, said carrier wave separated before not getting into ultra material space modulator with analog voltage signal.
According to ultra material space modulator of the present invention; Metal micro structure is provided with semiconductor element; When the analog voltage signal that voltage source produces is loaded on the semiconductor; Had influence on the characteristic electron (a kind of or its combination) of the semiconductor element on the metal micro structure, thereby caused the electromagnetism individual features of metal micro structure to change, and then changed the electromagnetic parameter characteristic of ultra material like resistance value, inductance value and capacitance.Therefore, change the electromagnetic wave (carrier wave) that passes ultra material in the space through changing ultra material electromagnetic parameter, we just can be modulated to the transmission information in the aanalogvoltage in the carrier wave of high frequency, realize electromagnetic spatial modulation.Than existing modulation, do not need secondary to amplify, can reduce nonlinear distortion.Said in addition carrier wave separated before not getting into ultra material space modulator with analog voltage signal, controlled more flexible.
Description of drawings
Fig. 1 is the modulation schematic flow sheet of the ultra material space modulator of the present invention;
Fig. 2 is the modulation particular flow sheet of a kind of embodiment of the ultra material space modulator of the present invention;
Fig. 3 is the structural representation of the ultra material space modulator of the present invention;
Shown in Figure 4ly be the be connected sketch map of metal micro structure among embodiment among the present invention with semiconductor element;
Fig. 5 adopts the structural representation of the ultra material space modulator of metal micro structure shown in Figure 4 for this.
Embodiment
" ultra material " is meant artificial composite structure or the composite material that some have the not available extraordinary physical property of natural material.Structurally ordered design through on the key physical yardstick of material can break through the restriction of some apparent natural law, thereby obtains to exceed the meta-materials function of the intrinsic common character of nature.
Three key characters that " ultra material " is important:
(1) " ultra material " the composite material that normally has novel artificial structure;
(2) " ultra material " has extraordinary physical property (not available in the natural often material);
(3) " ultra material " character is determined by the intrinsic properties of constituent material and artificial micro-structural wherein jointly.
The present invention utilizes ultra material to make up a kind of ultra material space modulator.Specific as follows:
Extremely shown in Figure 5 like Fig. 1; According to ultra material space modulator 100 of the present invention; Comprise base material 1 and be arranged on a plurality of metal micro structures 2 on the base material 1 that all be provided with semiconductor element 3 on each metal micro structure 2, all semiconductor elements 3 are electrically connected with a voltage source 30; Said voltage source 30 can produce analog voltage signal, and analog voltage signal is loaded on each semiconductor element 3.After analog voltage signal is loaded into each metal micro structure 2 and semiconductor element 3; Had influence on the characteristic electron (a kind of or its combination) of the semiconductor element 3 on the metal micro structure like resistance value, inductance value and capacitance; Thereby caused the electromagnetism individual features of metal micro structure to change, and then changed the electromagnetic parameter characteristic of ultra material.Thereby the response frequency of each metal micro structure 2 self can change, thereby can change the frequency through the carrier wave of ultra material space modulator 100, thereby analog voltage signal is modulated on the carrier wave.To have data-signal (analog voltage signal is a kind of data-signal) through the electromagnetic wave behind the ultra material space modulator.Each metal micro structure 2 is when analog voltage signal is loaded on it; Can change its electromagnetic parameter (dielectric constant and magnetic permeability); We can think to have changed its equivalent capacity the change of electromagnetic parameter (being dielectric constant here), and the change of electric capacity will inevitably cause the change of metal micro structure self response frequency, and the change of metal micro structure self response frequency then can influence the frequency through its carrier wave; The frequency of carrier wave is a vector; It comprises amplitude and phase place, therefore is actually and has accomplished amplitude modulation and phase modulation, thereby with being loaded on the carrier wave in the analog voltage signal.In addition, amplitude modulation and phase modulation are combined can realize any modulation.Shown in Figure 3, the line of the band arrow on the left side is represented the carrier wave of incident (before unmodulated), the electromagnetic wave after the line of the right band arrow is represented to modulate.
As shown in Figure 2, in the present embodiment, said carrier wave is produced by carrier generator 200, and through after power amplifier 300 amplifications, to ultra material space modulator 100 emissions, makes the carrier wave of high frequency get into ultra material space modulator 100 by transmitting antenna 400.
In the present embodiment, said carrier generator 200 is the microlock source.It is low that the microlock source has noise level, and power is big, and frequency stability is high, and coordinate simply, is easy to produce advantages such as WBFM signal.Through appropriate design phase-locked loop parameter, can suppress the noise of reference frequency source and VCO effectively, obtain low noise output.
In the present embodiment, said voltage source 30 is a digital to analog converter 500, and it converts digital signal into analog voltage signal.Said digital to analog converter 500 is electrically connected with semiconductor element 3 on each metal micro structure through lead, analog voltage signal is loaded on the semiconductor element 3 on each metal micro structure 2.The digital signal here can come from data processing equipment 600, for example FPGA, ASIC special digital chip or dsp chip.And digital signal can be encoded (accomplishing through data processing equipment 600) in advance, for example chnnel coding, source encoding and encryption.The primary signal (data flow) through coding then is not to obtain through various data-interfaces 700.For example, the communication traffic data stream interface can obtain voice messaging communication traffic, data communication business, short message communication traffic and digital broadcasting communication traffic etc.; The sensing network data-interface then can obtain the sensing data of sensing network node self or the communication data between node and node, node and gateway.
Said semiconductor element 3 among the present invention can be attached on the metal micro structure 2, also can embed in the metal micro structure 2.
In the present embodiment, said metal micro structure 2 for through etching, plating, brill quarter, photoetching, electronics is carved or ion is carved method attached to the metal wire on the plate shape substrates with specific pattern.Said metal wire is preferably copper cash or silver-colored line.Copper conducts electricity very well with silver, and is sensitive more to the response of electric field.
In the present embodiment, said base material 1 is piled up by a plurality of plate shape substrates 11 and forms, and all is attached with a plurality of metal micro structures 2 on each plate shape substrates 11, and all metal micro structures 2 form periodic array in the space.Shown in Figure 2, be one after piling up ultra material space modulator sketch map.Not performance among single plate shape substrates Fig. 2.
Said plate shape substrates 11 of the present invention can be made by ceramic material, epoxy resin or polytetrafluoroethylene.As an embodiment, select for use polytetrafluoroethylene to process plate shape substrates.The electrical insulating property of polytetrafluoroethylene is very good, and therefore can not produce and disturb, and have excellent chemical stability, corrosion resistance electromagnetic electric field, long service life, the base material that adheres to as metal micro structure is good selection.
Under the situation that base material is selected; Obtain the modulation effect wanted through pattern, design size and/or metal micro structure the arranging in the space that changes metal micro structure; This is because through changing pattern, design size and/or metal micro structure the arranging in the space of metal micro structure, can change the electromagnetic parameter ε and the μ of each unit in the space, ultra material space modulator place; Thereby when having analog voltage signal to be carried on the metal micro structure; Can design the equivalent electric magnetic parameter of every bit in the space, correspondingly obtain its equivalent capacity, and then obtain the response frequency of each metal micro structure self; Thereby can accurately control the modulation of every bit in the space, ultra material space modulator place, and then obtain the modulation (whole modulation) that we want.How as for pattern, design size and/or metal micro structure the arranging in the space that obtains metal micro structure, this method is multiple, gives an example; Can obtain through reverse computer simulation, the first modulation effect that we need removes to design the whole electromagnetic parameter of ultra material space modulator according to this effect and distributes; Calculate the electromagnetic parameter distribution of every bit the space again from integral body; Select pattern, design size and/or metal micro structure the arranging in the space (having deposited multiple metal micro structure data in the computer in advance) of corresponding metal micro-structural according to the electromagnetic parameter of this every bit, can use the method for exhaustion, for example earlier selected metal micro structure with specific pattern to the design of each point; Calculate electromagnetic parameter; Contrast with the result who obtains and we want contrasts recirculation repeatedly, till the electromagnetic parameter that finds us to want; If found, then accomplished the parameter choosing of metal micro structure; If do not find, then change a kind of metal micro structure of pattern, the circulation above repeating is till the electromagnetic parameter that finds us to want.If still do not find, then said process can not stop yet.After that is to say the metal micro structure of the electromagnetic parameter that has only found our needs, program just can stop.Because this process is all accomplished by computer, therefore, seem complicated, can accomplish soon in fact.
Circle among Fig. 3 on the ultra material space modulator is not the pattern of metal micro structure, and just expression is provided with metal micro structure 2 here, then is expression different metallic micro-structural as for the different sizes of circle.The different metallic micro-structural has multiple situation here, for example can be that the pattern of metal micro structure is identical, but its design size is different; Also can be that pattern and design size are all inequality.This can be different according to concrete needs; Irregular saying; All be the result after the Computer Simulation, that is to say that pattern, design size and the spatial arrangement of metal micro structure in the whole ultra material space modulator all obtains through computer is reverse, because the quantity of metal micro structure is huge in the whole ultra material space modulator; If therefore forward design is to be difficult to realize.
A preferred embodiment of the metal micro structure that obtains through Computer Simulation for the present invention shown in Figure 4; Said metal micro structure 2 is the single radial cut straight-flanked ring; Said semiconductor element 3 is attached to the opening part of said single radial cut straight-flanked ring and the two ends of connection opening, and above-mentioned partly leading stopped element 3 and be a kind of or its combination in resistance, inductance or the electric capacity.The said semiconductor element in preferential choosing ground 3 is for to be attached to the SMD variable capacitance on the metal micro structure, is carried in not of uniform size kind of voltage signal at SMD variable capacitance two ends, and capacitance can be ensued change.The change of capacitance; Then changed and the electromagnetic parameter of corresponding that metal micro structure present position of SMD variable capacitance (electric capacity change corresponding be the change of dielectric constant); Can regulate the electromagnetic parameter of all metal micro structure present positions through regulating the plurality of voltages signal; Thereby realized ultra material real between the whole electromagnetic parameter of modulator distribute adjustable (being that refractive index is adjustable), i.e. metal micro structure self response frequency scalable, the adjusting of metal micro structure self response frequency then can influence the frequency through its carrier wave; The frequency of carrier wave is a vector; It comprises amplitude and phase place, therefore is actually and has accomplished amplitude modulation and phase modulation, thereby with being loaded on the carrier wave in the analog voltage signal.Particularly; Every electromagnetic parameter is all adjustable in the ultra material space; And then (resonance point as if a certain metal micro structure is identical with the frequency of carrier wave, and then electromagnetic wave can not pass through this metal micro structure to realize control to amplitude with the phase place of carrier wave through the resonance point frequency that changes each metal micro structure; Otherwise if the frequency of the resonance point of a certain metal micro structure and carrier wave is inequality, then electromagnetic wave can pass through this metal micro structure), in addition, amplitude modulation and phase modulation are combined can realize any modulation.
Fig. 5 be structure shown in Figure 4 on plate shape substrates 11 layout viewing, should be understood that this is a signal, the shape of metal micro structure 2, quantity and spatial arrangement are not limited to this.Wherein, be the stacking direction of plate shape substrates perpendicular to the direction of paper.Among Fig. 4, draw for ease in addition, omitted lead 4.
Combine accompanying drawing that embodiments of the invention are described above; But the present invention is not limited to above-mentioned embodiment, and above-mentioned embodiment only is schematically, rather than restrictive; Those of ordinary skill in the art is under enlightenment of the present invention; Not breaking away under the scope situation that aim of the present invention and claim protect, also can make a lot of forms, these all belong within the protection of the present invention.
Claims (13)
1. ultra material space modulator; It is characterized in that; Said ultra material space modulator comprises base material and is arranged on a plurality of metal micro structures on the base material, all is provided with semiconductor element on each metal micro structure, and all semiconductor elements are electrically connected with a voltage source; Said voltage source can produce analog voltage signal, and analog voltage signal is loaded on each semiconductor element.
2. ultra material space modulator according to claim 1 is characterized in that, the carrier wave of the outside that is produced by carrier generator amplifies the back through power amplifier and launched to ultra material space modulator by transmitting antenna.
3. ultra material space modulator according to claim 2 is characterized in that said carrier generator is the microlock source.
4. ultra material space modulator according to claim 1; It is characterized in that; Said voltage source is a digital to analog converter; It converts digital signal into analog voltage signal, and said digital to analog converter is electrically connected with semiconductor element on each metal micro structure through lead, so that analog voltage signal is loaded on each semiconductor element.
5. according to any described ultra material space modulator of claim 1 to 4, it is characterized in that said semiconductor element is resistance, inductance or electric capacity.
6. according to any described ultra material space modulator of claim 1 to 4, it is characterized in that said semiconductor element is attached on the metal micro structure.
7. ultra material space modulator according to claim 6 is characterized in that, said semiconductor element is the SMD variable capacitance that is attached on the metal micro structure.
8. ultra material space modulator according to claim 1 is characterized in that, said metal micro structure for through etching, plating, brill quarter, photoetching, electronics is carved or ion is carved method attached to the metal wire on the plate shape substrates with specific pattern.
9. ultra material space modulator according to claim 1, said metal micro structure is the single radial cut straight-flanked ring, said semiconductor element is attached to the opening part of said single radial cut straight-flanked ring and the two ends of connection opening.
10. ultra material space modulator according to claim 8 is characterized in that, said metal wire is copper cash or silver-colored line.
11. ultra material space modulator according to claim 1 is characterized in that, said base material is piled up by a plurality of plate shape substrates and forms, and all is attached with a plurality of metal micro structures on each plate shape substrates.
12. ultra material space modulator according to claim 11 is characterized in that said plate shape substrates is made by ceramic material, epoxy resin or polytetrafluoroethylene.
13. ultra material space modulator according to claim 1 is characterized in that, said carrier wave separated before not getting into ultra material space modulator with analog voltage signal.
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| CN201110061745.5A CN102684607B (en) | 2011-03-15 | 2011-03-15 | Metamaterial space modulator |
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| CN201110061745.5A CN102684607B (en) | 2011-03-15 | 2011-03-15 | Metamaterial space modulator |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108683408A (en) * | 2018-04-13 | 2018-10-19 | 东南大学 | The super surface of time domain coding that harmonic wave width mutually can independently regulate and control |
| CN108923814A (en) * | 2018-05-29 | 2018-11-30 | 东南大学 | It may be programmed the wireless communications method and system of Meta Materials based on time domain |
| CN109067445A (en) * | 2018-09-27 | 2018-12-21 | 东南大学 | A kind of super surface of time domain coding for wireless communication |
| CN112217528A (en) * | 2020-10-12 | 2021-01-12 | 维沃移动通信有限公司 | Transmitter, communication system, and electronic device |
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| CN101667680A (en) * | 2009-08-31 | 2010-03-10 | 深圳市启汉科技有限公司 | Monopole radio frequency antenna |
| CN101783105A (en) * | 2010-02-22 | 2010-07-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | Drive circuit of spatial light modulator and operating method thereof |
| CN101820097A (en) * | 2009-01-14 | 2010-09-01 | 莱尔德技术股份有限公司 | Dual-polarized antenna modules |
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Patent Citations (4)
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| CN101542838A (en) * | 2006-08-25 | 2009-09-23 | 雷斯潘公司 | Antennas based on metamaterial structures |
| CN101820097A (en) * | 2009-01-14 | 2010-09-01 | 莱尔德技术股份有限公司 | Dual-polarized antenna modules |
| CN101667680A (en) * | 2009-08-31 | 2010-03-10 | 深圳市启汉科技有限公司 | Monopole radio frequency antenna |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108683408A (en) * | 2018-04-13 | 2018-10-19 | 东南大学 | The super surface of time domain coding that harmonic wave width mutually can independently regulate and control |
| CN108683408B (en) * | 2018-04-13 | 2021-05-11 | 东南大学 | Time domain coding super surface with independently adjustable harmonic amplitude and phase |
| CN108923814A (en) * | 2018-05-29 | 2018-11-30 | 东南大学 | It may be programmed the wireless communications method and system of Meta Materials based on time domain |
| CN109067445A (en) * | 2018-09-27 | 2018-12-21 | 东南大学 | A kind of super surface of time domain coding for wireless communication |
| CN112217528A (en) * | 2020-10-12 | 2021-01-12 | 维沃移动通信有限公司 | Transmitter, communication system, and electronic device |
| CN112217528B (en) * | 2020-10-12 | 2022-04-29 | 维沃移动通信有限公司 | Transmitter, communication system, and electronic device |
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| CN102684607B (en) | 2015-06-03 |
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