CN102684473A - Half-bridge circuit - Google Patents
Half-bridge circuit Download PDFInfo
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- CN102684473A CN102684473A CN2012101919211A CN201210191921A CN102684473A CN 102684473 A CN102684473 A CN 102684473A CN 2012101919211 A CN2012101919211 A CN 2012101919211A CN 201210191921 A CN201210191921 A CN 201210191921A CN 102684473 A CN102684473 A CN 102684473A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention is applied to the field of circuits, and provides a half-bridge circuit, which comprises a primary resonance circuit, a resonance inductor energy feedback circuit and a transformer leakage inductor energy feedback circuit, wherein the primary resonance circuit is used as an energy transmission loop, and supplies energy to a load; the resonance inductor energy feedback circuit is connected with the primary resonance circuit, and feeds back energy stored by a resonance inductor to a power grid; and the transformer leakage inductor energy feedback circuit is connected with the primary resonance circuit, and feeds back energy stored by a transformer leakage inductor to the power grid. A combined clamping circuit is adopted, interference generated by the resonance inductor and the transformer leakage inductor can be fed back to the power grid, and the reverse recovery spike of a secondary diode can be greatly reduced, so that overall efficiency can be improved, electromagnetic interference (EMI) can be reduced, and overall reliability can be greatly improved; and the combined clamping circuit is novel in structure, simple, reliable, high in universality and applicable to all half-bridge circuits.
Description
Technical field
The invention belongs to circuit field, relate in particular to a kind of half-bridge circuit.
Background technology
Traditional series resonant half bridge circuit utilizes resonant inductance to realize ZVT, can reduce switching loss.Have simple in structurely, efficient is high, receives electromagnetic interference (Electromagnetic Interference, EMI) little characteristics.But also come with some shortcomings, for example because of having increased resonant inductance, in the secondary diode reversely restoring process, diode can produce bigger due to voltage spikes and vibration, has increased the diode switch loss, makes the EMI variation of circuit; When inlet highway voltage was low, the resonant inductance value was smaller, and mainly be that the leakage inductance of transformer is more serious to the influence of secondary diode this moment; If improve the withstand voltage or adding RC absorption circuit of diode, then can bring the poorer and poorer problem of efficient of EMI.
Summary of the invention
The present invention seeks to the deficiency to above prior art, a kind of half-bridge circuit is provided, it is relatively poor to be intended to solve existing series resonant half bridge circuit EMI, the problem that efficient is lower.
The objective of the invention is to realize like this, a kind of half-bridge circuit comprises:
As the power transfer loop is the primary resonant circuit of load energize;
Be connected with said primary resonant circuit, the energy of resonant inductance storage is feedback to the resonant inductance energy feedback circuit of electrical network; And be connected with said primary resonant circuit, the transformer leakage inductance energy stored is feedback to the transformer leakage inductance energy feedback circuit of electrical network.
Further, said primary resonant circuit comprises the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, inductance L 1, the first transformer T1A and first capacitor C 1;
The drain electrode of the first metal-oxide-semiconductor Q1 is connected with the positive pole of voltage output end, and source electrode is connected with the input of inductance L 1;
The source electrode of the second metal-oxide-semiconductor Q2 is connected with the negative pole of voltage output end, and drain electrode is connected with the input of inductance L 1;
One end of the n1 circle of the first transformer T1A is connected with inductance L 1 output, and the other end is connected with first capacitor C 1, and first capacitor C, 1 other end connects the negative pole of voltage output end.
Further, said resonant inductance energy feedback circuit comprises first resistance R 1, the 3rd diode D3, the 4th diode D4, the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2;
The 3rd diode D3 and the 4th diode D4 are connected between the both positive and negative polarity of voltage input end with being in series;
First resistance R, 1 one ends are connected with the output of inductance L 1, and the other end is connected the junction of the 3rd diode D3 and the 4th diode D4;
The 4th diode D4, first resistance R 1, inductance L 1 and the first metal-oxide-semiconductor Q1 constitute positive half cycle bleed-off circuit;
The 3rd diode D3, first resistance R 1, inductance L 1 and the second metal-oxide-semiconductor Q2 constitute the negative half period bleed-off circuit.
Further, said transformer leakage inductance energy feedback circuit comprises the second transformer T1B, the 5th diode D5, the 6th diode D6, the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2;
The 5th diode D5 and the 6th diode D6 are connected between the both positive and negative polarity of voltage input end with being in series;
The second transformer T1B, one end is connected with the source electrode of the first metal-oxide-semiconductor Q1, and the other end is connected the junction of the 5th diode D5 and the 6th diode D6;
The 6th diode D6, the second transformer T1B, the first metal-oxide-semiconductor Q1 constitute positive half cycle bleed-off circuit;
The 3rd diode D3, the second transformer T1B, the second metal-oxide-semiconductor Q2 constitute the negative half period bleed-off circuit.
Further, said half-bridge circuit also comprises the ZVT circuit that is connected with said primary resonant circuit.
Further, said ZVT circuit comprises the 3rd capacitor C 3, the 4th capacitor C 4 and inductance L 1;
The 3rd capacitor C 3 is connected between the source electrode and drain electrode of the first metal-oxide-semiconductor Q1, and the 4th capacitor C 4 is connected between the source electrode and drain electrode of the second metal-oxide-semiconductor Q2.
Further, said half-bridge circuit also comprises the output rectifier and filter that is connected with said primary resonant circuit.
Further, said output rectifier and filter comprises the first diode D1, the second diode D2 and polar capacitor C2;
The first diode D1 is connected between the positive pole of an end and voltage output end of n2 circle of the first transformer T1A; The second diode D2 is connected between the positive pole of the other end and voltage output end of n2 circle of the first transformer T1A, and polar capacitor C2 is connected between the both positive and negative polarity of voltage output end.
The present invention adopts the combination clamp circuit, can the interference that resonant inductance and transformer leakage inductance produced be feedback in electrical network, can reduce the reverse recovery spike of secondary diode greatly; Thereby the raising overall efficiency reduces EMI, and the reliability of complete machine is improved greatly; Novel structure; Simple and reliable, highly versatile is suitable for all half-bridge circuits.
Description of drawings
Fig. 1 is a circuit block diagram structural representation of the present invention;
Fig. 2 is an electrical block diagram of the present invention.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Fig. 1 shows the structure of the half-bridge circuit in the embodiment of the invention, comprises primary resonant circuit 1, resonant inductance energy feedback circuit 2 and transformer leakage inductance energy feedback circuit 3.
Primary resonant circuit 1 is the load energize as the power transfer loop.
Resonant inductance energy feedback circuit 2 is connected with primary resonant circuit 1, and the energy of resonant inductance storage is feedback to electrical network.
Transformer leakage inductance energy feedback circuit 3 is connected with primary resonant circuit 1, and the transformer leakage inductance energy stored is feedback to electrical network.
As shown in Figure 2, primary resonant circuit 1 is made up of the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, inductance L 1, the first transformer T1A and first capacitor C 1.
The drain electrode of the first metal-oxide-semiconductor Q1 is connected with the positive pole of voltage output end; Source electrode is connected with the input of inductance L 1; The source electrode of the second metal-oxide-semiconductor Q2 is connected with the negative pole of voltage output end, and drain electrode is connected with the input of inductance L 1, and an end of the n1 circle of the first transformer T1A is connected with inductance L 1 output; The other end is connected with first capacitor C 1, and first capacitor C, 1 other end connects the negative pole of voltage output end.The first metal-oxide-semiconductor Q1, inductance L 1, the first transformer T1A and first capacitor C 1 constitute the positive half cycle power transfer of transformer loop, through the first diode D1, capacitor C 2 supply load positive half period energy; The second metal-oxide-semiconductor Q2, inductance L 1, the first transformer T1A and first capacitor C 1 constitute transformer negative half period power transfer loop, through the second diode D2, capacitor C 2 supply load negative half-cycle energy.
First resistance R 1, the 3rd diode D3, the 4th diode D4 and the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2 constitute resonant inductance energy feedback circuit 2.
The 3rd diode D3 and the 4th diode D4 are connected between the both positive and negative polarity of voltage input end with being in series, and first resistance R, 1 one ends are connected with the output of inductance L 1, and the other end is connected the junction of the 3rd diode D3 and the 4th diode D4.Resonant inductance energy feedback circuit can guarantee that the first diode D1, the second diode D2 are in reversely restoring process; Resonant inductance just/the negative half period energy stored feedbacks to electrical network through the 3rd diode D3, the 4th diode D4; Thereby when guaranteeing that the first diode D1, the second diode D2 turn-off, the energy of resonant inductance its top that can not be added to.Wherein the 4th diode D4, first resistance R 1, inductance L 1 and the first metal-oxide-semiconductor Q1 constitute positive half cycle bleed-off circuit; The 3rd diode D3, first resistance R 1, inductance L 1 and the second metal-oxide-semiconductor Q2 constitute the negative half period bleed-off circuit.
The second transformer T1B, the 5th diode D5, the 6th diode D6 and the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2 constitute transformer leakage inductance energy feedback circuit 3.
The 5th diode D5 and the 6th diode D6 are connected between the both positive and negative polarity of voltage input end with being in series, and the second transformer T1B, one end is connected with the source electrode of the first metal-oxide-semiconductor Q1, and the other end is connected the junction of the 5th diode D5 and the 6th diode D6.When circuit working under the low input condition; Transformer leakage inductance energy feedback circuit can guarantee that the first diode D1, the second diode D2 are in reversely restoring process; Transformer leakage inductance just/the negative half period energy stored feedbacks to electrical network through the 5th diode D5, the 6th diode D6; Thereby when guaranteeing that the first diode D1, the second diode D2 turn-off, the energy of resonant inductance its top that can not be added to.Wherein, the 6th diode D6, the second transformer T1B, the first metal-oxide-semiconductor Q1 constitute positive half cycle bleed-off circuit; The 3rd diode D3, the second transformer T1B, the second metal-oxide-semiconductor Q2 constitute the negative half period bleed-off circuit.
In embodiments of the present invention, this half-bridge circuit can also increase ZVT circuit 4, by the 3rd capacitor C 3 that inserts between the source electrode of the first metal-oxide-semiconductor Q1 and drain electrode; The 4th capacitor C 4 that inserts between the source electrode of the second metal-oxide-semiconductor Q2 and drain electrode; Constitute with inductance L 1, guarantee the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 before opening, its Vds voltage is close to 0V; Make the turn-on consumption of the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2 approach zero, thereby improve overall efficiency.
In embodiments of the present invention, this half-bridge circuit can also increase output rectifier and filter 5, is made up of D1, the second diode D2 and polar capacitor C2, and the first diode D1, the second diode D2 and polar capacitor C2 constitute.The first diode D1 is connected between the positive pole of an end and voltage output end of n2 circle of the first transformer T1A; The second diode D2 is connected between the positive pole of the other end and voltage output end of n2 circle of the first transformer T1A, and polar capacitor C2 is connected between the both positive and negative polarity of voltage output end.
The embodiment of the invention adopts the combination clamp circuit, can the interference that resonant inductance and transformer leakage inductance produced be feedback in electrical network, can reduce the reverse recovery spike of secondary diode greatly; Thereby the raising overall efficiency reduces EMI, and the reliability of complete machine is improved greatly; Novel structure; Simple and reliable, highly versatile is suitable for all half-bridge circuits.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a half-bridge circuit is characterized in that, said half-bridge circuit comprises:
As the power transfer loop is the primary resonant circuit of load energize;
Be connected with said primary resonant circuit, the energy of resonant inductance storage is feedback to the resonant inductance energy feedback circuit of electrical network; And be connected with said primary resonant circuit, the transformer leakage inductance energy stored is feedback to the transformer leakage inductance energy feedback circuit of electrical network.
2. half-bridge circuit as claimed in claim 1 is characterized in that, said primary resonant circuit comprises the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, inductance L 1, the first transformer T1A and first capacitor C 1;
The drain electrode of the first metal-oxide-semiconductor Q1 is connected with the positive pole of voltage output end, and source electrode is connected with the input of inductance L 1;
The source electrode of the second metal-oxide-semiconductor Q2 is connected with the negative pole of voltage output end, and drain electrode is connected with the input of inductance L 1;
One end of the n1 circle of the first transformer T1A is connected with inductance L 1 output, and the other end is connected with first capacitor C 1, and first capacitor C, 1 other end connects the negative pole of voltage output end.
3. half-bridge circuit as claimed in claim 1 is characterized in that, said resonant inductance energy feedback circuit comprises first resistance R 1, the 3rd diode D3, the 4th diode D4, the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2;
The 3rd diode D3 and the 4th diode D4 are connected between the both positive and negative polarity of voltage input end with being in series;
First resistance R, 1 one ends are connected with the output of inductance L 1, and the other end is connected the junction of the 3rd diode D3 and the 4th diode D4;
The 4th diode D4, first resistance R 1, inductance L 1 and the first metal-oxide-semiconductor Q1 constitute positive half cycle bleed-off circuit;
The 3rd diode D3, first resistance R 1, inductance L 1 and the second metal-oxide-semiconductor Q2 constitute the negative half period bleed-off circuit.
4. half-bridge circuit as claimed in claim 1 is characterized in that, said transformer leakage inductance energy feedback circuit comprises the second transformer T1B, the 5th diode D5, the 6th diode D6, the first metal-oxide-semiconductor Q1 and the second metal-oxide-semiconductor Q2;
The 5th diode D5 and the 6th diode D6 are connected between the both positive and negative polarity of voltage input end with being in series;
The second transformer T1B, one end is connected with the source electrode of the first metal-oxide-semiconductor Q1, and the other end is connected the junction of the 5th diode D5 and the 6th diode D6;
The 6th diode D6, the second transformer T1B, the first metal-oxide-semiconductor Q1 constitute positive half cycle bleed-off circuit;
The 3rd diode D3, the second transformer T1B, the second metal-oxide-semiconductor Q2 constitute the negative half period bleed-off circuit.
5. half-bridge circuit as claimed in claim 2 is characterized in that, said half-bridge circuit also comprises the ZVT circuit that is connected with said primary resonant circuit.
6. half-bridge circuit as claimed in claim 5 is characterized in that, said ZVT circuit comprises the 3rd capacitor C 3, the 4th capacitor C 4 and inductance L 1;
The 3rd capacitor C 3 is connected between the source electrode and drain electrode of the first metal-oxide-semiconductor Q1, and the 4th capacitor C 4 is connected between the source electrode and drain electrode of the second metal-oxide-semiconductor Q2.
7. half-bridge circuit as claimed in claim 2 is characterized in that, said half-bridge circuit also comprises the output rectifier and filter that is connected with said primary resonant circuit.
8. half-bridge circuit as claimed in claim 7 is characterized in that, said output rectifier and filter comprises the first diode D1, the second diode D2 and polar capacitor C2;
The first diode D1 is connected between the positive pole of an end and voltage output end of n2 circle of the first transformer T1A; The second diode D2 is connected between the positive pole of the other end and voltage output end of n2 circle of the first transformer T1A, and polar capacitor C2 is connected between the both positive and negative polarity of voltage output end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101919211A CN102684473A (en) | 2012-06-12 | 2012-06-12 | Half-bridge circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101919211A CN102684473A (en) | 2012-06-12 | 2012-06-12 | Half-bridge circuit |
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| CN102684473A true CN102684473A (en) | 2012-09-19 |
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| CN2012101919211A Pending CN102684473A (en) | 2012-06-12 | 2012-06-12 | Half-bridge circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868712A (en) * | 2015-05-26 | 2015-08-26 | 周玲 | Half-bridge circuit structure |
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|---|---|---|---|---|
| CN1467904A (en) * | 2002-06-06 | 2004-01-14 | ���ʹɷ�����˾ | Zvs/zvt resonant choke with voltage clamp winding |
| CN1988346A (en) * | 2006-12-08 | 2007-06-27 | 南京航空航天大学 | PWM combined three level DC converter of Zero voltage switch |
| CN101022247A (en) * | 2007-03-16 | 2007-08-22 | 艾默生网络能源有限公司 | Half bridge resonant transformer |
| CN101789697A (en) * | 2010-01-22 | 2010-07-28 | 艾默生网络能源有限公司 | Phase-shifted full-bridge converter with combined clamping circuit |
| CN202634287U (en) * | 2012-06-12 | 2012-12-26 | 深圳茂硕电源科技股份有限公司 | Half-bridge circuit structure |
-
2012
- 2012-06-12 CN CN2012101919211A patent/CN102684473A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1467904A (en) * | 2002-06-06 | 2004-01-14 | ���ʹɷ�����˾ | Zvs/zvt resonant choke with voltage clamp winding |
| CN1988346A (en) * | 2006-12-08 | 2007-06-27 | 南京航空航天大学 | PWM combined three level DC converter of Zero voltage switch |
| CN101022247A (en) * | 2007-03-16 | 2007-08-22 | 艾默生网络能源有限公司 | Half bridge resonant transformer |
| CN101789697A (en) * | 2010-01-22 | 2010-07-28 | 艾默生网络能源有限公司 | Phase-shifted full-bridge converter with combined clamping circuit |
| CN202634287U (en) * | 2012-06-12 | 2012-12-26 | 深圳茂硕电源科技股份有限公司 | Half-bridge circuit structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868712A (en) * | 2015-05-26 | 2015-08-26 | 周玲 | Half-bridge circuit structure |
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Address after: Shenzhen Nanshan District City, Guangdong province 518000 industrial park outside the small pine Tai Bai Lu Bai mang mulberry 6 layer Applicant after: MOSO Power Supply Technology Co., Ltd. Address before: Shenzhen Nanshan District City, Guangdong province 518000 industrial park outside the small pine Tai Bai Lu Bai mang mulberry 6 layer Applicant before: Shenzhen MoSo Power Supply Technology Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: SHENZHEN MOSO POWER SUPPLY TECHNOLOGY CO., LTD. TO: MOSO POWER SUPPLY TECHNOLOGY CO., LTD. |
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Application publication date: 20120919 |