CN102680821B - Inter-pixel electric crosstalk test system of infrared detector chip - Google Patents
Inter-pixel electric crosstalk test system of infrared detector chip Download PDFInfo
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- CN102680821B CN102680821B CN201210142794.6A CN201210142794A CN102680821B CN 102680821 B CN102680821 B CN 102680821B CN 201210142794 A CN201210142794 A CN 201210142794A CN 102680821 B CN102680821 B CN 102680821B
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Abstract
The invention discloses an inter-pixel electric crosstalk test system of an infrared detector chip. The inter-pixel electric crosstalk test system comprises a voltage signal source, a totally-enclosed metal shielding box, a voltage signal-to-current signal circuit, a vacuum Dewar flask, a cold screen, a current amplifier and a phase-locked amplifier. The inter-pixel electric crosstalk test system disclosed by the invention has the main advantages that (1) the bias current and a micro-current injection signal can be independently adjusted in a working range; (2) the injected micro-current signal is stable in the working range and does not distort along with the change of a load; (3) a modulation signal with specific frequency can be provided, and thus external electromagnetic interference and other possible noises influencing the test result can be eliminated; (4) the magnitude of the provided micro-current injection signal can be adjusted to an nA-magnitude required by infrared pixel test; and (5) the injected micro-current signal can be accurately calculated, and the accuracy of the tested electric crosstalk can be improved.
Description
Technical field:
The present invention relates to the technical field of measurement and test of infrared detector chip, specifically refer to a kind of infrared detector chip inter-pixel electrical cross talk test macro.
Background technology:
For the evaluation of performances of IR quality, there are a variety of modes.In numerous evaluatings, cross-talk (crosstalk) is one that can not ignore.The concept of cross-talk is: infrared light is incident in a certain photosensitive unit, the signal output of the certain component producing in some other photosensitive unit around.The quantification of cross-talk is defined as: the response signal of adjacent photosensitive unit and the ratio (conventionally representing with number percent) of response signal that is subject to the photosensitive unit of infrared light direct irradiation.Cross-talk can be divided into light cross-talk and electrical cross talk, and electrical cross talk is different from the generation mechanism of light cross-talk, but electrical cross talk is occupied an leading position in infrared focal plane device conventionally, so measure the cross-talk value of gained, is mainly electrical cross talk value.Due to the restriction (minimum 2 microns) of launching spot diameter dimension, adopt light injection method test cross-talk to be difficult to realize accurately and measure.On the contrary, micro-current injection method ratio is easier to measure exactly and calculate cross-talk, so the present invention is a kind of micro-electric current, injects the system of testing infrared detector chip inter-pixel electrical cross talk.
Micro-electric current injects and can realize by two kinds of modes: a kind of is that photosensitive unit directly connects with the large resistance of high impedance, and apply the pulse of sinusoidal voltage small-signal, but because the variation of the electrical resistance bias voltage of infrared eye picture dot pn knot changes, cause Injection Current signal to depart from sinusoidal signal and distortion is carried out measurement by lock-in amplifier and can be caused very large error.Another kind is exactly to inject stable not testing with micro-current signal of load variations, there is no at present relevant report and realizes the method.
Summary of the invention:
Distortion causes the problem of test error with load variations to the invention solves electrical cross talk Injection Current between the large resistance test pixel of existing series connection, for the test of infrared detector chip electrical cross talk provides a kind of adjustable high-precision test macro.
The present invention adopts following technical scheme:
A micro-electric current Injection Testing for infrared detector chip inter-pixel electrical cross talk, comprises that voltage signal source, totally-enclosed metallic shield case, voltage signal turn current signal circuit, vacuum dewar, cold screen, current amplifier, lock-in amplifier.Utilize voltage signal source to be connected to by shielding line the input end that voltage signal turns current signal circuit, the output terminal that voltage signal turns current signal circuit is connected with the test lead of vacuum dewar through shielding line again, test chip is contained on the cold head of vacuum dewar, cold head covers with cold screen, shielding chip infrared radiation around.Voltage signal turns current signal circuit and vacuum dewar is contained in totally enclosed metal shielding box simultaneously.Then with shielding line, the test lead of vacuum dewar is connected with the input end of current amplifier, then the output terminal of current amplifier is connected with lock-in amplifier input end.
In this system, the principal character of each several part is as follows:
1, voltage signal source can provide ac voltage signal and direct current biasing signal simultaneously, and ac voltage signal and d. c. voltage signal can be distinguished independent regulation.
2, voltage signal turns current signal circuit, it is characterized in that comprising a high-performance integrated operational amplifier, 4 high precision biasing resistors, a high precision output resistance.Annexation is, connect+15v of integrated operational amplifier 8 pins voltage, connect-15v of 4 pins voltage, 6 pins are connected with 7 pins, between 1 pin and 2 pins, are connected biasing resistor (r2), between 1 pin and 5 pins, are connected output resistance (R), between 3 pins and 6 pins, be connected biasing resistor (r4), between 2 pins and ground wire, be connected biasing resistor (r1), between input voltage signal and 3 pins, be connected biasing resistor (r3), 5 pin output current signals.
3, vacuum dewar, is characterized in that providing the low-temperature working environment of infrared detector chip.
4, cold screen, is characterized in that shielding chip most of infrared radiation around.
5, totally-enclosed metallic shield case, is characterized in that shielding test environment most electromagnetic interference (EMI) around.
6, current amplifier, is characterized in that micro-current signal of characteristic frequency to be amplified.
7, lock-in amplifier, is characterized in that having band-pass filtering function, the signal of characteristic frequency can be amplified and shows test results.
The present invention has the following advantages:
1, bias current and micro-electric current Injection Signal can independent regulation in working range;
Micro-current signal signal stabilization and not distortion with the variation of load in working range of 2, injecting;
3, the modulation signal of characteristic frequency can be provided, thereby get rid of outside electromagnetic interference and other interference that affect test result that may exist;
4, the micro-electric current Injection Signal magnitude providing can be adjusted to infrared picture dot and test required nA magnitude;
5, the micro-current signal injecting can accurate Calculation, can improve the accuracy of surveyed electrical cross talk.
Accompanying drawing explanation:
Accompanying drawing 1 micro-electric current of the present invention injects the structured flowchart of test infrared detector chip inter-pixel electrical cross talk system.
In accompanying drawing 2 the present invention, voltage signal turns the circuit diagram of current signal circuit.
Embodiment:
Below in conjunction with embodiment and accompanying drawing, be described further.
Referring to accompanying drawing 1, this infrared detector chip electrical cross talk test macro comprises that a voltage signal source, a totally enclosed metallic shield case, a voltage signal turn current signal circuit (as shown in Figure 2, voltage signal turns current signal circuit and comprises a high-performance integrated operational amplifier, 4 high-precision biasing resistors, a high-precision output resistance, adopt ± 15 volts of dual power supplies, relatively large micro-electric current output area can be provided), a vacuum dewar, a cold screen, a current amplifier and a lock-in amplifier.Voltage signal source is connected to the input end that voltage signal turns current signal circuit by shielding line, the output terminal that again voltage signal is turned to current signal circuit is connected with the test input of vacuum dewar through shielding line, chip to be measured is contained on the cold head of vacuum dewar, cold head covers with cold screen, and cold screen can shield chip most of infrared radiation around.Simultaneously voltage signal turns current signal circuit and vacuum dewar and does as a wholely, is contained in totally enclosed metal shielding box.Then with shielding line, the test output terminal of vacuum dewar is connected with the input end of current amplifier, then the output terminal of current amplifier is connected with shielding line with lock-in amplifier input end.
Concrete test specification:
First, utilize voltage signal source that required ac voltage signal and direct current biasing signal is provided during test, and ac voltage signal and d. c. voltage signal can distinguish independent regulation, frequency can need to select flexibly according to measuring.
Secondly, by voltage signal, turn current signal circuit voltage signal is converted into the required Weak current signal with modulation of test.Integrated operational amplifier in accompanying drawing 2 is the LTC1151CN8 integrated circuit amplifier of high precision, Low Drift Temperature, low imbalance.With reference to the dynamic electric resistance of pn knot, select suitable output resistance.For dynamic resistance maximal value 10
8it is 1G Ω that the medium-wave infrared detector chip of Ω magnitude is selected output resistance resistance, and error is 1%.In order to make the range of current of output reach the required magnitude of test, other 4 high precision biasing resistor resistances are chosen as 5K Ω, and error is 0.1%.When selecting mean value to be 1V, voltage signal source just can obtain the micro-current signal of injection that mean value is 1nA magnitude.
The 3rd, utilize vacuum dewar to provide infrared detector chip work required 77K low temperature environment.Again with most infrared radiation around cold screen shielding chip.Circuit and Dewar are done as a whole, and skin masks test environment most electromagnetic interference (EMI) around with totally-enclosed metallic shield case.
The 4th, the test signal of output is amplified through current amplifier, then filtering shows after lock-in amplifier further amplifies.
Claims (3)
1. an infrared detector chip inter-pixel electrical cross talk test macro, it comprises that voltage signal source, totally-enclosed metallic shield case, voltage signal turn current signal circuit, vacuum dewar, cold screen, current amplifier, lock-in amplifier, is characterized in that:
Described voltage signal source provides ac voltage signal and HVDC Modulation signal simultaneously, and ac voltage signal and d. c. voltage signal can be distinguished independent regulation;
Described voltage signal turns current signal circuit and comprises a LTC1151CN8 high-performance integrated operational amplifier, 4 high precision biasing resistors, a high precision output resistance; Annexation is, connect+15v of integrated operational amplifier 8 pins voltage, connect-15v of 4 pins voltage, 6 pins are connected with 7 pins, between 1 pin and 2 pins, are connected biasing resistor r2, between 1 pin and 5 pins, are connected output resistance R, between 3 pins and 6 pins, be connected biasing resistor r4, between 2 pins and ground wire, be connected biasing resistor r1, between input voltage signal and 3 pins, be connected biasing resistor r3,5 pin output current signals;
In system: voltage signal source is connected to by shielding line the input end that voltage signal turns current signal circuit, the output terminal that voltage signal turns current signal circuit is connected with the test lead of vacuum dewar through shielding line again, test chip is contained on the cold head of vacuum dewar, cold head covers with cold screen, shielding chip infrared radiation around; While voltage signal turns current signal circuit and vacuum dewar is contained in totally enclosed metal shielding box simultaneously; With shielding line, the test lead of vacuum dewar is connected with the input end of current amplifier, then the output terminal of current amplifier is connected with lock-in amplifier input end.
2. a kind of infrared detector chip inter-pixel electrical cross talk test macro according to claim 1, is characterized in that: the resistance that voltage signal turns 4 high precision biasing resistors described in current signal circuit is 5K Ω, and resistance error is 0.1%.
3. a kind of infrared detector chip inter-pixel electrical cross talk test macro according to claim 1, is characterized in that: the resistance that voltage signal turns the high precision output resistance described in current signal circuit is 1G Ω, and resistance error is 1%.
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| CN201210142794.6A CN102680821B (en) | 2012-05-09 | 2012-05-09 | Inter-pixel electric crosstalk test system of infrared detector chip |
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| CN107271042A (en) * | 2017-04-27 | 2017-10-20 | 中国空空导弹研究院 | A kind of detector crosstalk measuring device, its preparation method and crosstalk measuring method |
| CN110887570A (en) * | 2019-11-07 | 2020-03-17 | 中国电子科技集团公司第十一研究所 | Dewar assembly, infrared detector and assembling method of Dewar assembly |
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| JP2518141B2 (en) * | 1993-11-26 | 1996-07-24 | 日本電気株式会社 | Infrared detector and manufacturing method thereof |
| CN100433328C (en) * | 2006-11-08 | 2008-11-12 | 中国科学院上海技术物理研究所 | Infrared focal plane detector with antireflective convergence microlens and microlens preparing method |
| CN101285706A (en) * | 2008-05-30 | 2008-10-15 | 中国科学院上海技术物理研究所 | Differential input low-temperature infrared detector weak current amplifier |
| CN101527308B (en) * | 2009-04-10 | 2010-08-25 | 中国科学院上海技术物理研究所 | Plane-structure InGaAs array infrared detector |
| US8389377B2 (en) * | 2010-04-02 | 2013-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sensor element isolation in a backside illuminated image sensor |
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