CN102680433A - Method and device for compound detecting of luminescent properties of luminescent materials - Google Patents
Method and device for compound detecting of luminescent properties of luminescent materials Download PDFInfo
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- CN102680433A CN102680433A CN2012101130662A CN201210113066A CN102680433A CN 102680433 A CN102680433 A CN 102680433A CN 2012101130662 A CN2012101130662 A CN 2012101130662A CN 201210113066 A CN201210113066 A CN 201210113066A CN 102680433 A CN102680433 A CN 102680433A
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Abstract
The invention discloses a method for compound detecting of luminescent properties of luminescent materials. The method includes: using an electrode probe to contact with a micro-region structure in the front of a sample and a conductive plate of a sample table, performing electric pumping to the sample, and performing positioning carrier injection to the frontal micro-region structure of the sample through the electrode probe to excite electroluminescence of the sample; simultaneously, using a laser as a light source to irradiate the micro-region structure of the sample, performing optical pumping to the sample, performing positioning photon importing through the light source to excite photoluminescence of the sample; using a reflector to collect photons of the electroluminescence of the sample and photons of the photoluminescence of the sample, delivering the photons into a grating spectroscope through a light path to realize the compound detecting of the luminescent properties of the electroluminescence and the electroluminescence of the sample. The method plays an important role in researching excitation of photon effect and excitation mechanism and application of probe injected carrier.
Description
Technical field
The present invention relates to a kind of semiconductor science field, especially a kind of luminosity composite detection method and device of luminescent material.
Background technology
Current information photon development gets into integrated photochemical entirely with chip-scale of photoelectron on the chip; This is the key that realizes light quantum information processing and light quantum information calculations, and the light source that is used for optical interconnection of making on the silicon is the work of a bottleneck with propagating node.In addition, it is imperative to let semiconductor light emitting and illumination come into huge numbers of families, is the demand of low-carbon (LC) and environmental protection.At present, urgent need is to sign and the detection technique and the means thereof of luminescent material and components and parts.
Current; The common luminosity detecting instrument to luminescent material and components and parts has isolated photoluminescence spectrometer and electroluminescence detector; Can carry out photoluminescence (PL) spectral detection to luminous sample, electroluminescence (EL) detector then is coarse and scattered equipment (not having accurate, complete spectrometer) isolatedly.From research and development with make consideration, be urgent for utilizing photoluminescence and electroluminescence to method and the need for equipment that luminescent material and device carry out compound detection.
Summary of the invention
The objective of the invention is: composite detection method and device that a kind of luminosity of luminescent material is provided; It can utilize photoluminescence and electroluminescence that luminescent material, device are carried out compound detection, so that satisfy research and development and produce the detection demand in luminescent material and the components and parts.
The present invention is achieved in that the luminosity composite detection method of luminescent material; It is characterized in that: adopt positive domain structure and the sample stage current-carrying plate of electrode catheter contact sample; Sample is carried out the electric pump Pu; Do the location through electrode catheter at the positive domain structure of sample and inject charge carrier, make the sample excitation electroluminescence; Adopt laser to make the domain structure of light source irradiation sample simultaneously, sample is carried out optical pumping, import photon, make the sample excitation photoluminescence through light source incident or fiber orientation; Utilize catoptron to collect the photon of electroluminescent photon of sample and photoluminescence, send in the grating beam splitting appearance through light path again, thereby the compound detection of electroluminescence and photoluminescence is carried out in realization simultaneously to sample.
Utilize the position location of optical microscope regulation and control electrode catheter and LD laser.
The compound detection device comprises sample stage, on sample stage, is provided with the sample stage current-carrying plate; On the sample stage current-carrying plate, be connected with the negative pole conducting probe; Above the sample stage current-carrying plate, be provided with anodal conducting probe, above anodal conducting probe, be provided with the LD light source, the side above sample stage is provided with catoptron; Opposite side in sample stage is provided with the light path corresponding with catoptron, on light path, is connected with the grating beam splitting appearance.
Be used for substituting the bidirectional optical fiber of LD light source, catoptron and light path being provided with of anodal conducting probe, bidirectional optical fiber is connected with the grating beam splitting appearance.Utilize bidirectional optical fiber to insert various lasing light emitters sample is shone, and can oppositely collect the electroluminescence of sample and the photon of photoluminescence.
Above anodal conducting probe, be provided with optical microscope, on sample stage, be provided with sample stage fine motion device.Regulate and control anodal conducting probe through the optical microscope of high power and do the location at the positive domain structure of sample and inject charge carrier and excite electricity to do the location to luminous or controlled double-direction optical fiber at the positive domain structure of sample to import photoluminescence to luminous, this constituency electricity to luminous or constituency light to luminesceence analysis for luminescent material all is important.Sample stage fine motion device can be regulated the horizontal level of sample stage through the mode of knob, thereby sample is accurately adjusted with respect to the position of anodal conducting probe or excitation source.As shown in Figure 6 through optical microscope and sample stage fine motion device to the positive domain structure location of sample.
Luminous and independent electric pump Pu and the luminosity of optical pumping of luminous sample being carried out simultaneously the compound pumping of electric pump Pu and optical pumping are different; Transition has to exist together mutually also to have and does not exist together on similar excitation level structure; For the spectrum of luminous sample and comparison, detection, sign and the analysis of energy state structure thereof is very beneficial, for research photon effect excite and mechanism that excites and application that probe injects charge carrier play an important role.
Owing to adopt above-mentioned technical scheme; Compared with prior art; The present invention adopts the method for simultaneously luminous sample being carried out electric pump Pu and optical pumping; Make luminous sample excite electroluminescence and photoluminescence simultaneously, the photon of electroluminescence and photoluminescence is sent in the grating beam splitting appearance jointly, thus the compound detection of realization electroluminescence and photoluminescence.The inventive method is simple, and employed device is made easily, and result of use is good.
Description of drawings
Accompanying drawing 1 is the structural representation of embodiments of the invention 1;
Accompanying drawing 2 is the structural representation of embodiments of the invention 2
Accompanying drawing 3 is the luminous spectrum of the preceding silicon oxidation quantum dot light emitting sample of the annealing of embodiments of the invention 1;
Accompanying drawing 4 is the luminous spectrum of the silicon oxidation quantum dot light emitting sample after the annealing of embodiments of the invention 1;
Accompanying drawing 5 is embodiments of the invention 2 at the luminous spectrum of the silicon oxidation quantum dot light emitting sample of different atmosphere preparations such as argon gas, oxygen and nitrogen;
Accompanying drawing 6 for the present invention through optical microscope and sample stage fine motion device to the positive domain structure location map of sample;
Accompanying drawing 7 is the structural representation of sample stage fine motion device of the present invention.
Embodiment
Embodiments of the invention 1: the luminosity composite detection method of luminescent material; Adopt positive domain structure and the sample stage current-carrying plate of electrode catheter contact sample; Sample is carried out the electric pump Pu; Do the location through electrode catheter at the positive domain structure of sample and inject charge carrier, make the sample excitation electricity to luminous; Adopt laser to make the domain structure of light source irradiation sample simultaneously, sample is carried out optical pumping, import photon, make the sample excitation photoluminescence through the light source location; Utilize catoptron to collect the photon of electroluminescent photon of sample and photoluminescence, send in the grating beam splitting appearance through light path again, thereby the compound detection of electroluminescence and photoluminescent property is carried out in realization simultaneously to sample.Utilize the position location of optical microscope regulation and control electrode catheter and laser simultaneously.
The structure of compound detection device is as shown in Figure 1, comprises sample stage 1, on sample stage 1, is provided with sample stage current-carrying plate 2; On sample stage current-carrying plate 2, be connected with negative pole conducting probe 3-1; Above sample stage current-carrying plate 2, be provided with anodal conducting probe 3-2, above anodal conducting probe 3-2, be provided with LD light source 7, the side above sample stage 1 is provided with catoptron 4; Be provided with the light path 5 corresponding at the opposite side of sample stage 1, be provided with grating beam splitting appearance 6 being connected with on the light path 5 with catoptron 4; Above anodal conducting probe 3-2, be provided with optical microscope 9, on sample stage 1, be provided with sample stage fine motion device 10.
In use; Earlier silicon oxidation quantum dot sample 11 is placed on the sample stage 1; Negative pole conducting probe 3-1 contact sample stage current-carrying plate 2 applies negative voltage for the back electrode of sample 11, and anodal conducting probe 3-2 injects electric pump Pu charge carrier the domain structure in sample 11 fronts; Sample 11 electroluminescent photons are collected by catoptron 4, get into grating beam splitting appearance 6 through light path 5; Simultaneously, send excitation light irradiation to sample 11 by LD light source 7, the photon of sample 11 photoluminescences is collected by catoptron 4, gets into grating beam splitting appearance 6 through light path 5, has so just realized the compound detection of PL and EL.In testing process, with anodal conducting probe 3-2 and sample stage fine motion device sample 11 front domain structures are made location injection charge carrier through optical microscope 9 through control manipulation and excite EL luminous.
The luminous spectrum of the silicon oxidation quantum dot light emitting sample 11 before the annealing is as shown in Figure 3; The luminous spectrum of the silicon oxidation quantum dot light emitting sample 11 after the annealing is as shown in Figure 4.Its luminous microcell location structure is as shown in Figure 4.
Embodiments of the invention 2: the structure of compound detection device is as shown in Figure 2; Comprise sample stage 1, on sample stage 1, be provided with sample stage current-carrying plate 2, on sample stage current-carrying plate 2, be connected with negative pole conducting probe 3-1; Above sample stage current-carrying plate 2, be provided with anodal conducting probe 3-2; Above anodal conducting probe 3-2, be provided with bidirectional optical fiber 8, be provided with grating beam splitting appearance 6 being connected with on the light path 5, bidirectional optical fiber 8 is connected with grating beam splitting appearance 6; Above anodal conducting probe 3-2, be provided with optical microscope 9, on sample stage 1, be provided with sample stage fine motion device 10.
In use; Detect luminous spectrum with photoluminescence (PL) and electroluminescence (EL) complex method at the silicon oxidation quantum dot light emitting sample of different atmosphere preparations; The luminous spectrum characteristic of the silicon oxidation quantum dot light emitting sample 11 that particularly relatively prepares in different atmosphere such as argon gas, oxygen and nitrogen; Earlier sample 11 is placed on the sample stage 1, negative pole conducting probe 3-1 contact sample stage current-carrying plate 2 applies negative voltage for the back electrode of sample 11; Anodal conducting probe 3-2 is with the domain structure in electric pump Pu charge carrier injection sample 11 fronts, and grating beam splitting appearance 6 is collected and sent into to sample 11 electroluminescent photons by bidirectional optical fiber 8; Simultaneously; With the irradiation end of the bidirectional optical fiber that connects external lasing light emitter 8 and the domain structure position alignment in sample 11 fronts; The excitation light irradiation of being introduced by bidirectional optical fiber 8 is to sample 11; The photon of sample 11 photoluminescences is by bidirectional optical fiber 8 and send into grating beam splitting appearance 6, has so just realized the compound detection of PL and EL.In testing process, with anodal conducting probe 3-2 and sample stage fine motion device sample 11 front domain structures are made location injection charge carrier through optical microscope 9 through control manipulation and excite EL luminous.
The luminous spectrum that detects the silicon oxidation quantum dot light emitting sample 11 for preparing in different atmosphere such as argon gas, oxygen and nitrogen with electroluminescence (EL) and photoluminescence (PL) complex method is as shown in Figure 5.
Claims (5)
1. the luminosity composite detection method of a luminescent material; It is characterized in that: adopt positive domain structure and the sample stage current-carrying plate of electrode catheter contact sample; Sample is carried out the electric pump Pu; Do the location through electrode catheter at the positive domain structure of sample and inject charge carrier, make the sample excitation electroluminescence; Adopt laser to make the domain structure of light source irradiation sample simultaneously, sample is carried out optical pumping, import photon, make the sample excitation photoluminescence through light source incident or fiber orientation; Utilize catoptron to collect the photon of electroluminescent photon of sample and photoluminescence, send in the grating beam splitting appearance through light path again, thereby the compound detection of electroluminescence and photoluminescence is carried out in realization simultaneously to sample.
2. the luminosity composite detection method of luminescent material according to claim 1 is characterized in that: the microcell positioning action that utilizes optical microscope regulation and control electrode catheter and exciting light.
3. compound detection device that adopts the luminosity composite detection method of the described luminescent material of claim 1; Comprise sample stage (1); It is characterized in that: on sample stage (1), be provided with sample stage current-carrying plate (2); On sample stage current-carrying plate (2), be connected with negative pole conducting probe (3-1); Be provided with anodal conducting probe (3-2) in sample stage current-carrying plate (2) top, be provided with LD light source (7) in the top of anodal conducting probe (3-2), the side in sample stage (1) top is provided with catoptron (4); Opposite side in sample stage (1) is provided with the light path (5) corresponding with catoptron (4), on light path (5), is connected with grating beam splitting appearance (6).
4. compound detection device according to claim 3; It is characterized in that: be used for substituting the bidirectional optical fiber (8) of LD light source (7), catoptron (4) and light path (5) being provided with of anodal conducting probe (3-2), bidirectional optical fiber (8) is connected with grating beam splitting appearance (6).
5. according to claim 3 or 4 described compound detection devices, it is characterized in that: be provided with optical microscope (9) in anodal conducting probe (3-2) top, on sample stage (1), be provided with sample stage fine motion device (10).
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117894706A (en) * | 2024-03-15 | 2024-04-16 | 季华实验室 | Multi-mode wafer detection system and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006112988A (en) * | 2004-10-18 | 2006-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Probe type light measuring device |
| CN101490517A (en) * | 2006-05-05 | 2009-07-22 | Bt成像股份有限公司 | Method and system for testing indirect bandgap semiconductor devices using luminescence imaging |
| CN201434840Y (en) * | 2009-06-23 | 2010-03-31 | 华中科技大学 | Laser probe micro-zone composition analyzer |
| CN202710474U (en) * | 2012-04-18 | 2013-01-30 | 贵州大学 | Compound detector for luminescent properties of luminescent materials |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006112988A (en) * | 2004-10-18 | 2006-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Probe type light measuring device |
| CN101490517A (en) * | 2006-05-05 | 2009-07-22 | Bt成像股份有限公司 | Method and system for testing indirect bandgap semiconductor devices using luminescence imaging |
| CN201434840Y (en) * | 2009-06-23 | 2010-03-31 | 华中科技大学 | Laser probe micro-zone composition analyzer |
| CN202710474U (en) * | 2012-04-18 | 2013-01-30 | 贵州大学 | Compound detector for luminescent properties of luminescent materials |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117894706A (en) * | 2024-03-15 | 2024-04-16 | 季华实验室 | Multi-mode wafer detection system and method |
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Application publication date: 20120919 |