CN102665369B - High-power electronic ballast - Google Patents

High-power electronic ballast Download PDF

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CN102665369B
CN102665369B CN201210142839.XA CN201210142839A CN102665369B CN 102665369 B CN102665369 B CN 102665369B CN 201210142839 A CN201210142839 A CN 201210142839A CN 102665369 B CN102665369 B CN 102665369B
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circuit
resistor
effect transistor
field effect
bridge inverter
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CN102665369A (en
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权循华
杜庆朋
谢洋
陆帅
雷涛
陈辉
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Hefei Daming Zhilian Technology Co ltd
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HEFEI DAMING ENERGY-SAVING TECHNOLOGY CO LTD
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Abstract

本发明涉及一种采用有源二次检测技术抑制浪涌电流、实现软启动的大功率电子镇流器,包括含EMI滤波电路、整流电路、MCU控制电路、采样检测电路、半桥逆变电路,整流电路的输出端与第一电感L11的一端连接,第一电感L11的另一端分别与场效应管QE的漏极D、二极管D11的正极连接,二极管D11的负极分别与第二电阻R12的一端、第一电阻R11的一端连接,第二电阻R12的另一端分别与第三电阻R13的一端和采样检测电路连接,当电源接通后,通过电阻R11抑制开机浪涌电流,此后采样电路进行第二次检测,当电压达到400V时,控制电路发出指令,使半桥逆变电路工作,实现真正意义上的抑制浪涌电流和软启动。

Figure 201210142839

The invention relates to a high-power electronic ballast which uses active secondary detection technology to suppress surge current and realize soft start, including an EMI filter circuit, a rectifier circuit, an MCU control circuit, a sampling detection circuit, and a half-bridge inverter circuit , the output end of the rectifier circuit is connected to one end of the first inductance L11, the other end of the first inductance L11 is respectively connected to the drain D of the field effect transistor QE, and the anode of the diode D11, and the cathode of the diode D11 is respectively connected to the second resistor R12 One end is connected to one end of the first resistor R11, and the other end of the second resistor R12 is respectively connected to one end of the third resistor R13 and the sampling detection circuit. When the power is turned on, the startup surge current is suppressed through the resistor R11. In the second detection, when the voltage reaches 400V, the control circuit sends an instruction to make the half-bridge inverter circuit work, so as to realize the real suppression of surge current and soft start.

Figure 201210142839

Description

大功率电子镇流器High Power Electronic Ballast

技术领域technical field

本发明涉及大功率电子镇流器技术领域,具体涉及一种采用有源二次检测技术抑制浪涌电流、实现软启动的大功率电子镇流器。The invention relates to the technical field of high-power electronic ballasts, in particular to a high-power electronic ballast which uses active secondary detection technology to suppress surge current and realize soft start.

背景技术Background technique

大功率电子镇流器普遍采用有源功率因数校正技术在开机加电时,由于滤波电容的充电会产生很大的浪涌电流。目前,市场上大功率HID电子镇流器中抑制开机浪涌电流冲击有以下3种方案:High-power electronic ballasts generally adopt active power factor correction technology. When starting up and powering on, a large surge current will be generated due to the charging of the filter capacitor. At present, there are the following three schemes for suppressing the surge current impact of startup in high-power HID electronic ballasts on the market:

第一种是采用单一的负温度系数NTC热敏电阻来抑制电源接通瞬间的浪涌电流冲击,如图1,在接通电源瞬间,NTC热敏电阻其阻值较高,用来在刚接通时产生较低的浪涌电流,而热敏电阻在正常工作状况下会自然加热,其阻值也随之下降到工作阻值,可避免更多的消耗。对于小功率的电子镇流器工作电流较小,损耗不大,但在大功率电子镇流器中自身消耗较大,温升也很大,显然不合适。尤其当关断电源在快速的重新接通,热敏电阻还未完全冷却,将丧失浪涌抑制的功能,从而失去对电子镇流器的保护。The first is to use a single negative temperature coefficient NTC thermistor to suppress the surge current impact at the moment of power on, as shown in Figure 1. At the moment of power on, the resistance of the NTC thermistor is relatively high, which is used to A lower inrush current is generated when it is turned on, and the thermistor will heat up naturally under normal working conditions, and its resistance value will drop to the working resistance value accordingly, which can avoid more consumption. For low-power electronic ballasts, the operating current is small and the loss is not large, but in high-power electronic ballasts, the self-consumption is relatively large and the temperature rise is also large, which is obviously not suitable. Especially when the power supply is turned off and turned on again quickly, the thermistor has not cooled completely, and the function of surge suppression will be lost, thus losing the protection of the electronic ballast.

第二种是采用在桥式整流前端放置继电器(或双向三极晶闸管)与电阻R并联方式,如图2所示。开机时,通过R抑制浪涌电流,通过延时电路完成对电容C1的充电后,继电器吸合,电阻R被继电器旁路掉,从而减小完全运行时的功耗。这是目前大功率电子镇流器抑制浪涌电流的普遍方法。但是当在电压较低时,由于采用有源功率因数校正的电子镇流器具有恒功率特性,通过继电器触点的电流就会增大,使得继电器触点可能会被烧熔,从而使继电器的寿命缩短,间接减少电子镇流器的使用寿命。The second is to place a relay (or bidirectional triode thyristor) in parallel with the resistor R at the front end of the bridge rectifier, as shown in Figure 2. When starting up, the inrush current is suppressed through R, and after the capacitor C1 is charged through the delay circuit, the relay pulls in, and the resistor R is bypassed by the relay, thereby reducing the power consumption during full operation. This is a common method for current high-power electronic ballasts to suppress surge currents. However, when the voltage is low, due to the constant power characteristic of the electronic ballast with active power factor correction, the current passing through the relay contacts will increase, so that the relay contacts may be melted, thus shortening the life of the relay. Shorten, indirectly reduce the service life of electronic ballasts.

第三种是在有源功率因数校正电路中采用继电器(或双向三极晶闸管)与电阻R并联来抑制电源接通瞬间的浪涌冲击,如图3所示,由于电子镇流器有源功率因数校正普遍采用升压方式,提升至400V,这样在正常工作时,通过继电器触点电流大幅度下降,增大了继电器的使用寿命。但是该方式的连接,当输入电源接通时,PFC电路会在很短的时间内将电解电容C1两端电压提升至400V,为达到较好的浪涌电流抑制效果,往往电阻R的取值都会达到10欧姆左右,当接通瞬间处于交流电的峰值附近时,电容C1两端电压达到400V时,电阻R两端的瞬时电压幅值可能会达到100V以上,此时,MOSFET管的源极和漏极之间承受的电压值达到500V以上,超过MOSFET管的耐压值,可能损坏MOSFET管,缩短电子镇流器的使用寿命。The third is to use a relay (or bidirectional triode thyristor) in parallel with the resistor R in the active power factor correction circuit to suppress the surge impact at the moment the power is turned on, as shown in Figure 3, due to the active power of the electronic ballast The factor correction generally adopts the step-up method, which is raised to 400V, so that in normal operation, the current through the relay contact is greatly reduced, and the service life of the relay is increased. However, with this method of connection, when the input power is turned on, the PFC circuit will increase the voltage across the electrolytic capacitor C1 to 400V in a short period of time. In order to achieve a better surge current suppression effect, the value of the resistor R is often It will reach about 10 ohms. When the moment of connection is near the peak value of the alternating current, when the voltage across the capacitor C1 reaches 400V, the instantaneous voltage amplitude across the resistor R may reach more than 100V. At this time, the source and drain of the MOSFET tube The voltage value between the poles reaches more than 500V, which exceeds the withstand voltage value of the MOSFET tube, which may damage the MOSFET tube and shorten the service life of the electronic ballast.

发明内容Contents of the invention

本发明的目的是提供一种采用有源二次检测技术抑制浪涌电流、实现软启动的大功率电子镇流器,从而可以延长镇流器和HID灯管的寿命。The object of the present invention is to provide a high-power electronic ballast which adopts active secondary detection technology to suppress surge current and realize soft start, thereby prolonging the service life of the ballast and the HID lamp tube.

为实现上述发明目的,本发明采用了以下技术方案:一种大功率电子镇流器,包括串联的EMI滤波电路和整流电路串联,整流电路的输出端与第一电感L11的一端连接,第一电感L11的另一端分别与场效应管QE的漏极D、二极管D11的正极连接,其特征在于:场效应管QE的栅极G经过PFC升压电路与MCU控制电路连接,二极管D11的负极分别与第二电阻R12的一端、第一电阻R11的一端连接,第二电阻R12的另一端分别与第三电阻R13的一端和采样检测电路40连接,第一电阻R11的另一端分别与第一电容C11的正极、半桥逆变电路连接,且第一电阻R11的两端并联有继电器K的一对常开触点;半桥逆变电路与第二电感L12的一端连接,第二电感L12的另一端分别与第二电容C12的一端、HID灯的一端连接,整流电路的一端、场效应管QE的衬底及源极S、第三电阻R13的另一端、第一电容C11的负极、半桥逆变电路的一端均接地;第二电容C12的另一端、HID灯的另一端均接地;所述的PFC升压电路和采样检测电路输出信号至MCU控制电路,MCU控制电路通过半桥逆变控制电路控制半桥逆变电路的工作/停止。In order to realize the purpose of the above invention, the present invention adopts the following technical solutions: a high-power electronic ballast, including a series EMI filter circuit and a rectifier circuit connected in series, the output end of the rectifier circuit is connected to one end of the first inductance L11, the first The other end of the inductor L11 is respectively connected to the drain D of the field effect transistor QE and the anode of the diode D11, which is characterized in that: the gate G of the field effect transistor QE is connected to the MCU control circuit through the PFC boost circuit, and the negative poles of the diode D11 are respectively It is connected with one end of the second resistor R12 and one end of the first resistor R11, the other end of the second resistor R12 is respectively connected with one end of the third resistor R13 and the sampling detection circuit 40, and the other end of the first resistor R11 is respectively connected with the first capacitor The positive pole of C11 is connected to the half-bridge inverter circuit, and a pair of normally open contacts of the relay K are connected in parallel at both ends of the first resistor R11; the half-bridge inverter circuit is connected to one end of the second inductance L12, and the second inductance L12 The other end is respectively connected with one end of the second capacitor C12 and one end of the HID lamp, one end of the rectifier circuit, the substrate and source S of the field effect transistor QE, the other end of the third resistor R13, the negative electrode of the first capacitor C11, the half One end of the bridge inverter circuit is grounded; the other end of the second capacitor C12 and the other end of the HID lamp are grounded; the output signal of the PFC boost circuit and the sampling detection circuit is sent to the MCU control circuit, and the MCU control circuit passes the half-bridge inverter The variable control circuit controls the work/stop of the half-bridge inverter circuit.

所述的场效应管QE为P沟道增强型绝缘栅场效应管。The field effect transistor QE is a P-channel enhanced insulated gate field effect transistor.

当电源接通后,通过电阻R11抑制开机浪涌电流,同时采样电路第一次检测电阻R11和电容C11的总电压,由于采样位置的变化调整至电阻R11前,采样电压不再是传统意义上的C1的电压。当总电压达到400V时,有源功率因数校正电路自动完成对400V的控制,确保不会击穿MOSFET,同时控制电路发出命令让继电器吸合,将电阻R11旁路;此后采样电路进行第二次检测,(此时由于R11被旁路,检测值即为电容C11的端电压,此时电压可能低于400V,有源功率因数校正电路自动将电压调整至400V),当电压达到400V时,控制电路发出指令,使半桥逆变电路工作,实现真正意义上的抑制浪涌电流和软启动。When the power is turned on, the start-up surge current is suppressed through the resistor R11, and the sampling circuit detects the total voltage of the resistor R11 and the capacitor C11 for the first time. Due to the change of the sampling position, the sampling voltage is no longer in the traditional sense. voltage of C1. When the total voltage reaches 400V, the active power factor correction circuit automatically completes the control of 400V to ensure that the MOSFET will not be broken down. At the same time, the control circuit issues a command to make the relay pick up and bypass the resistor R11; after that, the sampling circuit conducts a second Detection, (at this time, because R11 is bypassed, the detection value is the terminal voltage of capacitor C11. At this time, the voltage may be lower than 400V, and the active power factor correction circuit automatically adjusts the voltage to 400V). When the voltage reaches 400V, the control The circuit issues instructions to make the half-bridge inverter circuit work, so as to realize the suppression of inrush current and soft start in the true sense.

附图说明Description of drawings

图1-3是现有技术中的三种具体方案的电路原理图;1-3 are schematic circuit diagrams of three specific solutions in the prior art;

图4是本发明的电路原理图。Fig. 4 is a schematic circuit diagram of the present invention.

具体实施方式Detailed ways

一种大功率电子镇流器,它包含EMI滤波电路10、整流电路20、MCU控制电路50、采样检测电路40、半桥逆变电路60、第一电感L11、第二电感L12、二极管D11、场效应管QE、第一电阻R11、第二电阻R12、第三电阻R13、继电器K、第一电容C11、第二电容C12和HID灯,串联的EMI滤波电路10和整流电路20串联,整流电路20的输出端与第一电感L11的一端连接,第一电感L11的另一端分别与场效应管QE的漏极D、二极管D11的正极连接,其特征在于:场效应管QE的栅极G经过PFC升压电路30与MCU控制电路50连接,二极管D11的负极分别与第二电阻R12的一端、第一电阻R11的一端连接,第二电阻R12的另一端分别与第三电阻R13的一端和采样检测电路40连接,第一电阻R11的另一端分别与第一电容C11的正极、半桥逆变电路60连接,且第一电阻R11的两端并联有继电器K的一对常开触点;半桥逆变电路60与第二电感L12的一端连接,第二电感L12的另一端分别与第二电容C12的一端、HID灯的一端连接,整流电路20的一端、场效应管QE的衬底及源极S、第三电阻R13的另一端、第一电容C11的负极、半桥逆变电路60的一端均接地;第二电容C12的另一端、HID灯的另一端均接地。A high-power electronic ballast, which includes an EMI filter circuit 10, a rectifier circuit 20, an MCU control circuit 50, a sampling detection circuit 40, a half-bridge inverter circuit 60, a first inductor L11, a second inductor L12, a diode D11, Field effect transistor QE, first resistor R11, second resistor R12, third resistor R13, relay K, first capacitor C11, second capacitor C12 and HID lamp, EMI filter circuit 10 and rectifier circuit 20 connected in series, rectifier circuit The output terminal of 20 is connected to one end of the first inductance L11, and the other end of the first inductance L11 is respectively connected to the drain D of the field effect transistor QE and the anode of the diode D11, and it is characterized in that: the gate G of the field effect transistor QE passes through The PFC boost circuit 30 is connected to the MCU control circuit 50, the cathode of the diode D11 is respectively connected to one end of the second resistor R12 and one end of the first resistor R11, and the other end of the second resistor R12 is respectively connected to one end of the third resistor R13 and the sampling The detection circuit 40 is connected, and the other end of the first resistor R11 is respectively connected to the positive pole of the first capacitor C11 and the half-bridge inverter circuit 60, and a pair of normally open contacts of the relay K are connected in parallel to the two ends of the first resistor R11; The bridge inverter circuit 60 is connected to one end of the second inductance L12, the other end of the second inductance L12 is respectively connected to one end of the second capacitor C12 and one end of the HID lamp, one end of the rectifier circuit 20, the substrate of the field effect transistor QE and The source S, the other end of the third resistor R13, the negative electrode of the first capacitor C11, and one end of the half-bridge inverter circuit 60 are all grounded; the other end of the second capacitor C12 and the other end of the HID lamp are all grounded.

所述的场效应管QE为P沟道增强型绝缘栅场效应管。The field effect transistor QE is a P-channel enhanced insulated gate field effect transistor.

本发明的工作流程为:市电AC220V通过EMI滤波电路10即为电磁干扰滤波电路滤波抑制电网的电磁干扰,经整流电路20即由4个二极管所组成的肖特基整流模块整流后给PFC升压电路30即功率因数校正电路供电,MCU控制电路50的输入信号由PFC升压电路30和采样检测电路40所提供,MOSFET管即场效应管QE的珊极G与PFC升压电路30相连,漏极D接在二极管D11的正极,源极S接地。经二极管D11升压后分成两路,其中一路经过电阻R12、R13串联流向地,采样电路从R12、R13中间取信号送至MCU控制电路50;另一路经过相互并联的继电器K与第一电阻R11到第一电容C11的正端,C11的负端接地,半桥逆变电路60并联在C11的两端,由半桥逆变控制电路70所控制。半桥逆变电路60的输出正端接第二电感L12,负端接地。L12的另一端与HID灯串联,HID灯的另一端接地,第二电容C12并联在HID灯两端。The working process of the present invention is: the mains AC220V passes through the EMI filter circuit 10, which is the electromagnetic interference filter circuit to filter and suppress the electromagnetic interference of the power grid. The voltage circuit 30 is the power factor correction circuit for power supply, the input signal of the MCU control circuit 50 is provided by the PFC boost circuit 30 and the sampling detection circuit 40, and the gate G of the MOSFET tube, that is, the field effect transistor QE, is connected with the PFC boost circuit 30, The drain D is connected to the anode of the diode D11, and the source S is grounded. After being boosted by diode D11, it is divided into two circuits, one of which passes through resistors R12 and R13 in series and flows to the ground, and the sampling circuit takes a signal from the middle of R12 and R13 and sends it to the MCU control circuit 50; the other passes through the relay K connected in parallel with the first resistor R11 To the positive terminal of the first capacitor C11 , the negative terminal of C11 is grounded, the half-bridge inverter circuit 60 is connected in parallel with both ends of C11 , and is controlled by the half-bridge inverter control circuit 70 . The positive terminal of the output of the half-bridge inverter circuit 60 is connected to the second inductor L12, and the negative terminal is grounded. The other end of L12 is connected in series with the HID lamp, the other end of the HID lamp is grounded, and the second capacitor C12 is connected in parallel to both ends of the HID lamp.

本发明可以很好地解决背景技术中三种方式带来的困扰,采用继电器的有源二次检测技术来抑制开机浪涌电流、实现软启动的大功率电子镇流器,从而可以延长镇流器和HID灯管的寿命。The present invention can well solve the troubles caused by the three methods in the background technology, and adopts the active secondary detection technology of the relay to suppress the start-up surge current and realize the soft start of the high-power electronic ballast, so that the ballast can be extended device and HID lamp life.

Claims (2)

1.一种大功率电子镇流器,包括串联的EMI滤波电路(10)和整流电路(20)串联,整流电路(20)的输出端与第一电感L11的一端连接,第一电感L11的另一端分别与场效应管QE的漏极D、二极管D11的正极连接,其特征在于:场效应管QE的栅极G经过PFC升压电路(30)与MCU控制电路(50)连接,二极管D11的负极分别与第二电阻R12的一端、第一电阻R11的一端连接,第二电阻R12的另一端分别与第三电阻R13的一端和采样检测电路(40)连接,第一电阻R11的另一端分别与第一电容C11的正极、半桥逆变电路(60)连接,且第一电阻R11的两端并联有继电器K的一对常开触点;半桥逆变电路(60)与第二电感L12的一端连接,第二电感L12的另一端分别与第二电容C12的一端、HID灯的一端连接,整流电路(20)的一端、场效应管QE的衬底及源极S、第三电阻R13的另一端、第一电容C11的负极、半桥逆变电路(60)的一端均接地;第二电容C12的另一端、HID灯的另一端均接地;1. A high-power electronic ballast, comprising a series connection of an EMI filter circuit (10) and a rectification circuit (20), the output end of the rectification circuit (20) is connected to one end of the first inductance L11, and the first inductance L11 The other end is respectively connected to the drain D of the field effect transistor QE and the anode of the diode D11, which is characterized in that: the gate G of the field effect transistor QE is connected to the MCU control circuit (50) through the PFC boost circuit (30), and the diode D11 The negative electrode of the second resistor R12 is connected with one end of the second resistor R12 and one end of the first resistor R11 respectively, the other end of the second resistor R12 is connected with one end of the third resistor R13 and the sampling detection circuit (40) respectively, and the other end of the first resistor R11 Connect with the positive pole of the first capacitor C11 and the half-bridge inverter circuit (60) respectively, and a pair of normally open contacts of the relay K are connected in parallel at the two ends of the first resistor R11; the half-bridge inverter circuit (60) and the second One end of the inductance L12 is connected, the other end of the second inductance L12 is respectively connected with one end of the second capacitor C12 and one end of the HID lamp, one end of the rectifier circuit (20), the substrate and the source S of the field effect transistor QE, the third The other end of the resistor R13, the negative pole of the first capacitor C11, and one end of the half-bridge inverter circuit (60) are all grounded; the other end of the second capacitor C12 and the other end of the HID lamp are all grounded; 所述的PFC升压电路(30)和采样检测电路(40)输出信号至MCU控制电路(50),MCU控制电路(50)通过半桥逆变控制电路(70)控制半桥逆变电路(60)的工作/停止。The PFC boost circuit (30) and sampling detection circuit (40) output signals to the MCU control circuit (50), and the MCU control circuit (50) controls the half-bridge inverter circuit ( 60) work/stop. 2.根据权利要求1所述的大功率电子镇流器,其特征在于:所述的场效应管QE为P沟道增强型绝缘栅场效应管。2. The high-power electronic ballast according to claim 1, characterized in that: said field effect transistor QE is a P-channel enhanced insulated gate field effect transistor.
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