CN102665369B - High-power electronic ballast - Google Patents
High-power electronic ballast Download PDFInfo
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- CN102665369B CN102665369B CN201210142839.XA CN201210142839A CN102665369B CN 102665369 B CN102665369 B CN 102665369B CN 201210142839 A CN201210142839 A CN 201210142839A CN 102665369 B CN102665369 B CN 102665369B
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Abstract
The invention relates to a high-power electronic ballast for suppressing surge current and realizing soft start by adopting an active secondary detection technology. The high-power electronic ballast comprises an EMI (Electro-Magnetic Interference) filter circuit, a rectifying circuit, an MCU (Micro-programmed Control Unit), a sampling detection circuit and a half-bridge inverter circuit, wherein the output end of the rectifying circuit is connected with one end of a first inductor L11; the other end of the first inductor L11 is connected with the drain of a field effect tube QE and the anode of a diode D11 respectively; the cathode of the diode D11 is connected with one end of a second resistor R12 and one end of a first resistor R11 respectively; and the other end of the second resistor R12 is connected with one end of a third resistor R13 and the sampling detection circuit respectively. After a power supply is switched on, startup surge current is suppressed through the resistor R11, secondary detection is performed by using a sampling circuit, and the circuit is controlled to send a command for running the half-bridge inverter circuit when the voltage reaches 400V, so that real suppression of surge current and soft start are realized.
Description
Technical field
The present invention relates to great-power electronic ballast technical field, be specifically related to a kind of great-power electronic ballast that adopts active secondary detection technology surge current suppression, realizes soft start.
Background technology
Great-power electronic ballast generally adopts Active Power Factor Correction Technology when start powers up, because the charging of filter capacitor can produce very large surge current.At present, on market, in high-power HID electric ballast, suppress the impact of start surge current and have following 3 kinds of schemes:
The first is to adopt single negative temperature coefficient NTC thermistor to suppress the power connection surge current impact of moment, as Fig. 1, switching on power moment, its resistance of NTC thermistor is higher, be used for producing lower surge current when logical rigidly connecting, and thermistor can heat by nature under normal operative condition, its resistance also drops to work resistance thereupon, can avoid more consumption.Less for low power electric ballast operating current, loss is little, but autophage is larger in great-power electronic ballast, and temperature rise is also very large, obviously improper.Especially when power cutoff is reclosing fast, thermistor is also completely not cooling, will lose the function of Surge suppression, thereby loses the protection to electric ballast.
The second is to adopt at bridge rectifier front end to place relay (or bidirectional triode thyristor) and resistance R parallel way, as shown in Figure 2.During start, by R surge current suppression, by delay circuit, complete after the charging of capacitor C 1, relay adhesive, resistance R is bypassed by relay, thus the power consumption while reducing to move completely.This is the common method of current great-power electronic ballast surge current suppression.But when when voltage is lower, owing to adopting the electric ballast of Active Power Factor Correction to have constant output characteristic, the electric current by relay contact will increase, and makes the relay contact may be by scorification, thereby make the lost of life of relay, indirectly reduce the useful life of electric ballast.
The third is in APFC, to adopt relay (or bidirectional triode thyristor) the suppress power connection surge impact of moment in parallel with resistance R, as shown in Figure 3, because electric ballast Active Power Factor Correction generally adopts boosting mode, be promoted to 400V, like this when normal work, by relay contact electric current, significantly decline, increased the useful life of relay.But the connection of which, when input power is connected, pfc circuit can be promoted to 400V by electrochemical capacitor C1 both end voltage in a short period of time, for reaching good Inrush current restraining effect, often the value of resistance R all can reach 10 ohm of left and right, in the time of near connecting the peak value of moment in alternating current, when capacitor C 1 both end voltage reaches 400V, more than the instantaneous voltage amplitude at resistance R two ends may reach 100V, now, more than the magnitude of voltage bearing between the source electrode of MOSFET pipe and drain electrode reaches 500V, the withstand voltage that surpasses MOSFET pipe, may damage MOSFET pipe, shorten the useful life of electric ballast.
Summary of the invention
The object of this invention is to provide and a kind ofly adopt active secondary detection technology surge current suppression, realize the great-power electronic ballast of soft start, thereby can extend the life-span of ballast and HID fluorescent tube.
For achieving the above object, the present invention has adopted following technical scheme: a kind of great-power electronic ballast, comprise EMI filter circuit and the rectification circuit series connection of series connection, the output of rectification circuit is connected with one end of the first inductance L 11, the other end of the first inductance L 11 respectively with the drain D of field effect transistor QE, the positive pole of diode D11 connects, it is characterized in that: the grid G of field effect transistor QE is connected with MCU control circuit through PFC booster circuit, the negative pole of diode D11 respectively with one end of the second resistance R 12, one end of the first resistance R 11 connects, the other end of the second resistance R 12 is connected with sample detecting circuit 40 with one end of the 3rd resistance R 13 respectively, the other end of the first resistance R 11 respectively with the positive pole of the first capacitor C 11, half-bridge inversion circuit connects, and the two ends of the first resistance R 11 are parallel with a pair of normally opened contact of relay K, half-bridge inversion circuit is connected with one end of the second inductance L 12, the other end of the second inductance L 12 is connected with one end of the second capacitor C 12, one end of HID lamp respectively, the other end of one end of rectification circuit, the substrate of field effect transistor QE and source S, the 3rd resistance R 13, first negative pole of capacitor C 11, the equal ground connection in one end of half-bridge inversion circuit, the equal ground connection of the other end of the other end of the second capacitor C 12, HID lamp, described PFC booster circuit and sample detecting circuit output signal be to MCU control circuit, and MCU control circuit is controlled the work of half-bridge inversion circuit/stop by semi-bridge inversion control circuit.
Described field effect transistor QE is P-channel enhancement type isolated gate FET.
After power connection, by resistance R 11, suppress start surge currents, sample circuit detects the total voltage of resistance R 11 and capacitor C 11 for the first time simultaneously, and because the variation of sampling location is adjusted to before resistance R 11, sampled voltage is no longer the voltage of traditional C1.When total voltage reaches 400V, APFC completes the control to 400V automatically, guarantees can not puncture MOSFET, and simultaneously control circuit is given an order and allowed relay adhesive, by resistance R 11 bypasses; After this sample circuit detects for the second time, (now because R11 is bypassed, detected value is the terminal voltage of capacitor C 11, now voltage may be lower than 400V, APFC is adjusted to 400V by voltage automatically), when voltage reaches 400V, control circuit sends instruction, make half-bridge inversion circuit work, realize surge current suppression and soft start truly.
Accompanying drawing explanation
Fig. 1-3rd, the circuit theory diagrams of three kinds of concrete schemes of the prior art;
Fig. 4 is circuit theory diagrams of the present invention.
Embodiment
A great-power electronic ballast, it comprises EMI filter circuit 10, rectification circuit 20, MCU control circuit 50, sample detecting circuit 40, half-bridge inversion circuit 60, the first inductance L 11, the second inductance L 12, diode D11, field effect transistor QE, the first resistance R 11, the second resistance R 12, the 3rd resistance R 13, relay K, the first capacitor C 11, the second capacitor C 12 and HID lamp, 20 series connection of the EMI filter circuit 10 of series connection and rectification circuit, the output of rectification circuit 20 is connected with one end of the first inductance L 11, the other end of the first inductance L 11 respectively with the drain D of field effect transistor QE, the positive pole of diode D11 connects, and it is characterized in that: the grid G of field effect transistor QE is connected with MCU control circuit 50 through PFC booster circuit 30, the negative pole of diode D11 respectively with one end of the second resistance R 12, one end of the first resistance R 11 connects, and the other end of the second resistance R 12 is connected with sample detecting circuit 40 with one end of the 3rd resistance R 13 respectively, the other end of the first resistance R 11 respectively with the positive pole of the first capacitor C 11, half-bridge inversion circuit 60 connects, and the two ends of the first resistance R 11 are parallel with a pair of normally opened contact of relay K, half-bridge inversion circuit 60 is connected with one end of the second inductance L 12, the other end of the second inductance L 12 is connected with one end of the second capacitor C 12, one end of HID lamp respectively, the equal ground connection in one end of the other end of one end of rectification circuit 20, the substrate of field effect transistor QE and source S, the 3rd resistance R 13, the negative pole of the first capacitor C 11, half-bridge inversion circuit 60, the equal ground connection of the other end of the other end of the second capacitor C 12, HID lamp.
Described field effect transistor QE is P-channel enhancement type isolated gate FET.
Workflow of the present invention is: civil power AC220V is by EMI filter circuit 10 electromagnetic interference that electromagnetic interference filter circuit filtering suppresses electrical network, after the Schottky rectification module rectification being comprised of 4 diodes through rectification circuit 20, giving PFC booster circuit 30 is that circuit of power factor correction is powered, the input signal of MCU control circuit 50 is provided by PFC booster circuit 30 and sample detecting circuit 40, MOSFET pipe is that the coral utmost point G of field effect transistor QE is connected with PFC booster circuit 30, drain D is connected on the positive pole of diode D11, source S ground connection.After diode D11 boosts, be divided into two-way, wherein a road flows to ground through resistance R 12, R13 series connection, and sample circuit is delivered to MCU control circuit 50 from the middle number of winning the confidence of R12, R13; The relay K that another road process is parallel with one another and the anode of the first resistance R 11 to first capacitor C 11, the negativing ending grounding of C11, half-bridge inversion circuit 60 is connected in parallel on the two ends of C11, by semi-bridge inversion control circuit 70, is controlled.The output plus terminal of half-bridge inversion circuit 60 connects the second inductance L 12, negativing ending grounding.The other end of L12 is connected with HID lamp, the other end ground connection of HID lamp, and the second capacitor C 12 is connected in parallel on HID lamp two ends.
The present invention can solve three kinds of puzzlements that mode is brought in background technology well, adopt the active secondary detection technology of relay suppress to start shooting surge current, realize the great-power electronic ballast of soft start, thereby can extend the life-span of ballast and HID fluorescent tube.
Claims (2)
1. a great-power electronic ballast, comprise EMI filter circuit (10) and rectification circuit (20) series connection of series connection, the output of rectification circuit (20) is connected with one end of the first inductance L 11, the other end of the first inductance L 11 respectively with the drain D of field effect transistor QE, the positive pole of diode D11 connects, it is characterized in that: the grid G of field effect transistor QE is connected with MCU control circuit (50) through PFC booster circuit (30), the negative pole of diode D11 respectively with one end of the second resistance R 12, one end of the first resistance R 11 connects, the other end of the second resistance R 12 is connected with sample detecting circuit (40) with one end of the 3rd resistance R 13 respectively, the other end of the first resistance R 11 respectively with the positive pole of the first capacitor C 11, half-bridge inversion circuit (60) connects, and the two ends of the first resistance R 11 are parallel with a pair of normally opened contact of relay K, half-bridge inversion circuit (60) is connected with one end of the second inductance L 12, the other end of the second inductance L 12 is connected with one end of the second capacitor C 12, one end of HID lamp respectively, the equal ground connection in one end of one end of rectification circuit (20), the substrate of field effect transistor QE and source S, the other end of the 3rd resistance R 13, the negative pole of the first capacitor C 11, half-bridge inversion circuit (60), the equal ground connection of the other end of the other end of the second capacitor C 12, HID lamp,
Described PFC booster circuit (30) and sample detecting circuit (40) output signal to MCU control circuit (50), and MCU control circuit (50) is controlled the work of half-bridge inversion circuit (60)/stop by semi-bridge inversion control circuit (70).
2. great-power electronic ballast according to claim 1, is characterized in that: described field effect transistor QE is P-channel enhancement type isolated gate FET.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210142839.XA CN102665369B (en) | 2012-05-10 | 2012-05-10 | High-power electronic ballast |
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| CN201210142839.XA CN102665369B (en) | 2012-05-10 | 2012-05-10 | High-power electronic ballast |
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| CN102665369A CN102665369A (en) | 2012-09-12 |
| CN102665369B true CN102665369B (en) | 2014-04-16 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103066861A (en) * | 2012-11-14 | 2013-04-24 | 广西玖典电子新材料有限公司 | High frequency high voltage magnetic reactance stabilized voltage supply |
| CN102983732A (en) * | 2012-11-26 | 2013-03-20 | 福州欣联达电子科技有限公司 | Average current Power Factor Correction (PFC) circuit capable of preventing starting current from damaging sample resistor |
| CN107561384A (en) * | 2017-08-25 | 2018-01-09 | 广州七喜智能设备有限公司 | Frequency converter is soft to open resistance tolerance impact capacity test device and method |
| CN108964246B (en) * | 2018-07-25 | 2021-11-23 | 郑州云海信息技术有限公司 | Main/standby power supply switching method and system of test equipment |
| CN109194107A (en) * | 2018-11-20 | 2019-01-11 | 北京汇能精电科技股份有限公司 | A kind of guard method for protecting circuit, photovoltaic inverter and photovoltaic inverter |
| CN112448600A (en) * | 2019-09-03 | 2021-03-05 | 西安航兴海拓电子科技有限公司 | Integrated power supply |
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| US5420780A (en) * | 1993-12-30 | 1995-05-30 | Omega Power Systems | Apparatus for limiting inrush current |
| CN2502485Y (en) * | 2001-09-28 | 2002-07-24 | 北京硅谷浪潮科技发展有限公司 | High power factor electronic ballast for controlling high voltage gas discharge lamp |
| CN201156840Y (en) * | 2008-02-25 | 2008-11-26 | 杨素芬 | High power electronic ballast of ultraviolet ray strip lamp |
| CN201674714U (en) * | 2010-05-25 | 2010-12-15 | 合肥大明电子科技有限公司 | Electronic ballast with MCU intelligent protection |
| CN202587560U (en) * | 2012-05-10 | 2012-12-05 | 合肥大明节能科技有限公司 | High-power electronic ballast |
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Address after: 4 building, No. 6, Zhenxing Road, Shushan new industrial park, Anhui, Hefei, 230031 Patentee after: HEFEI MING ENERGY-SAVING TECHNOLOGY Co.,Ltd. Address before: Zhenxin road Shushan District of Hefei City, Anhui province 230031 6 4 floor Patentee before: Hefei Daming Energy-Saving Technology Co.,Ltd. |
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Address after: 230031 4th floor, No.6 Zhenxing Road, Shushan new industrial park, Hefei City, Anhui Province Patentee after: Hefei Daming Zhilian Technology Co.,Ltd. Address before: 230031 4th floor, No.6 Zhenxing Road, Shushan new industrial park, Hefei City, Anhui Province Patentee before: HEFEI MING ENERGY-SAVING TECHNOLOGY Co.,Ltd. |