CN102664596A - High fidelity transistor audio power amplifying device - Google Patents
High fidelity transistor audio power amplifying device Download PDFInfo
- Publication number
- CN102664596A CN102664596A CN2012101406189A CN201210140618A CN102664596A CN 102664596 A CN102664596 A CN 102664596A CN 2012101406189 A CN2012101406189 A CN 2012101406189A CN 201210140618 A CN201210140618 A CN 201210140618A CN 102664596 A CN102664596 A CN 102664596A
- Authority
- CN
- China
- Prior art keywords
- resistance
- positive
- module
- negative
- npn type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Amplifiers (AREA)
Abstract
The invention discloses a high fidelity transistor audio power amplifying device comprising an input amplifying module, a difference module signal converting module, a voltage amplifying module, a main voltage negative feedback module, an auxiliary feedback module and a difference module signal offsetting module, wherein the input amplifying module is used for increasing the input resistance, amplifying an input audio signal and generating an audio difference module signal; the difference module signal converting module is used for converting, amplifying and outputting the audio difference module signal; the voltage amplifying module is used for performing voltage amplification on the audio signal amplified by the input amplifying module and the difference module signal converting module; the main voltage negative feedback module is used for feeding back the audio signal to the input amplifying module; the auxiliary feedback module is used for feeding back the audio signal to the difference module signal converting module; and the difference module signal offsetting module is used for providing static offset current for the difference module signal converting module. The device has the advantages of simple structure, low cost, easiness in manufacture, non-debugging operation, good safety and efficiency, and beautiful tone quality, etc.
Description
Technical field
The present invention relates to electronic technology field, particularly a kind of high-fidelity transistor audio power amplifying apparatus.
Background technology
At present, known audio power amplifying apparatus is applied in the power amplifier, and dividing by materials used generally has transistor and electron tube two big classes.Dividing by structure has two kinds of discrete component and integrated circuits; Analog-and digital-two kinds have been divided by the circuit working mode.No matter the audio power amplifying apparatus of which kind of type all exists some insoluble intrinsic problem and defectives at present; Circuit performance respectively has pluses and minuses, causes using cost, reliability, efficient and the acoustical quality etc. of the amplifirer that this audio power amplifying apparatus makes can't be simultaneously satisfactory.
Wherein, in discrete component transistor analogue audio frequency power amplifier device
1, the caloric value of class-A audio power amplifying device is big, efficient is low, power output is generally less, cost is higher, stability and fail safe are relatively poor, has only the minority power amplifier to adopt sort circuit.
2, Class B audio power amplifying apparatus amplifying signal cross distortion (intermodulation distortion) is very big, and the detail section of sound can not show, and general power amplifier does not adopt the sort circuit form.
3, the efficient of class AB audio power amplifying apparatus and amplifying signal cross distortion are the circuit forms that the current audio power amplifier generally adopts between said two devices.
And in the discrete or integrated DAB power amplifier device of transistor
Because transistor all is operated on off state, thereby switch distortion is its intrinsic shortcoming.
In addition, in the transistor audio power amplifying apparatus that adopts integrated circuit, also there is following problem:
1, because volume is little, in the sets of elements, intensive, this has just determined that the phase mutual interference is big between the high low signal of audio signal, self-excitation easily.
2, all elements all are operated in the condition of high temperature, the amplification performance variation.
3, circuit is fixed, and is difficult to repacking.
4, power output is generally less, in most cases can not meet the demands.
5, sound effect also has some drawback of transistor power amplifier.
And also there is following problem in the electron tube audio power amplifying apparatus:
1, volume is big, power consumption is big, efficient is low.
2, cost is high, the life-span is short.
3, maintenance cost is high.
4, power output is little.
5, the existence of output transformer has determined big, the linear difference of bass and high pitch distortion and sense of hearing is not good.
The amplifirer that existing audio power amplifying apparatus is made more than using at present, the drawback of transistor amplifirer on tonequality is: the digital flavor of sound is denseer; Sound is thin, lacks mellow sense and sweet sense; Odd harmonic distortion is big, and high pitch has very strong burr sense, lets the people be difficult to stand under long-time, the big volume; The space multistory weak effect; Efficient and tonequality can not be taken into account; Class AB, Class B cross distortion are big, and the sound details is few, even details is submerged fully; Transient intermodulation is big, and the definition and the stereovision of sound are relatively poor, and dynamic range is little.And electron tube amplifirer volume is big, power consumption is big, efficient is low, cost is high, the life-span is short, maintenance cost is high, power output is little, bass and high pitch sense of hearing are not good.
The raising of Along with people's material and culture level; Tonequality to stereo set requires also increasingly high; Existing audio power amplifying apparatus; Can not satisfy more music-lover far away and tonequality is had fanaticism and the needs of the harsh Fancier that requires; And the audio power amplifying apparatus of complicated circuit, expensive can not be accepted by the people of vast wage-earners, thus be badly in need of on the market a kind of can have simultaneously with low cost, make easily, exempt from advantages such as debugging, safe and efficient, tonequality grace, and HD Audio power amplifier device simple in structure.
Summary of the invention
In view of this, the invention provides a kind of high-fidelity transistor audio power amplifying apparatus, have simultaneously simple in structure, with low cost, make easily, exempt from advantages such as debugging, safe and efficient, tonequality grace.
For reaching above-mentioned purpose, technical scheme of the present invention specifically is achieved in that
A kind of high-fidelity transistor audio power amplifying apparatus, this device comprises:
The input amplification module is used to increase input resistance, the audio signal of input is amplified, and produce the audio frequency difference mode signal;
The difference mode signal modular converter is used for said audio frequency difference mode signal is changed and amplified output;
The voltage amplification module is used for the audio signal after said input amplification module and the amplification of difference mode signal modular converter is carried out voltage amplification;
Principal voltage negative feedback module is used for to said input amplification module feedback audio signal;
Auxiliary feedback module is used for to said difference mode signal modular converter feedback audio signal;
Difference mode signal quiescent biasing module is used to said difference mode signal modular converter quiescent bias current is provided.
Preferably, this device further comprises:
The output amplification module is used for the audio signal after the said voltage amplification module amplification is carried out power amplification output;
The quiescent biasing module is used to said output amplification module quiescent bias current is provided;
The dynamic bias module is used to said output amplification module dynamic bias is provided;
Two active power filtering modules are used for filter out power AC ripple and the positive and negative power source voltage of stable prime.
Preferably, said input amplification module comprises:
Be series at capacitor C 1 and resistance R 1 between audio signal input end and the resistance R 2;
Be parallel to resistance R 2 and capacitor C 2 between resistance R 1 and technotron Q1 grid and the ground;
Technotron Q1 and Q2 that source electrode links to each other;
Be series at the drain electrode of technotron Q1 and both hole and electron hole NPN type triode Q3 and resistance R 6 between the prime positive supply;
Be series at the drain electrode of technotron Q2 and the NPN type triode Q4 between the prime positive supply;
Be series at resistance R 7 and R8 between prime positive supply and the ground;
Be parallel to continuous technotron Q1 of source electrode and the capacitor C 5 between the Q2 grid.
Preferably, said difference mode signal modular converter comprises:
Be parallel to the resistance R 5 between electron hole electronics positive-negative-positive triode Q6 base stage and the emitter;
Collector electrode connects the NPN type triode Q5 of positive-negative-positive triode Q6 base stage, emitter connection prime negative supply, base stage connection NPN type triode Q7 emitter;
Base stage connects the positive-negative-positive triode Q6 of NPN type triode Q5 collector electrode, emitter connection NPN type triode Q7 base stage;
Be series at source electrode that FET Q1, Q2 link to each other and NPN type triode Q7 and the resistance R 9 between the prime negative supply;
Be connected the resistance R 10 between positive-negative-positive triode Q6 collector electrode and the NPN type triode Q9 base stage.
Preferably, said voltage amplification module comprises:
Base stage is connected the positive-negative-positive triode Q8 on NPN type triode Q3 collector electrode and the resistance R 6;
Be parallel to collector electrode and the capacitor C between the base stage 9 of positive-negative-positive triode Q8;
Be connected the emitter of positive-negative-positive triode Q8 and the resistance R 12 between the prime positive supply;
Base stage is connected the NPN type triode Q9 of resistance R 10 1 ends;
Be parallel to the capacitor C 8 between NPN type triode Q9 base stage and the collector electrode;
Be connected the resistance R 16 between NPN type triode Q9 emitter and the prime negative supply.
Preferably, said auxiliary feedback module comprises:
Be series at resistance R and capacitor C between FET Q2 grid and the NPN type triode Q7 emitter.
Preferably, said difference mode signal quiescent biasing module comprises:
Be series at and the prime negative supply between resistance R 3;
Be parallel to capacitor C 3, C4 and voltage stabilizing didoe D1 between non-earth terminal of R3 and the prime negative supply;
Be connected the resistance R 4 of resistance R 3 non-earth terminals and positive-negative-positive triode Q6 emitter.
Preferably, said quiescent biasing module comprises:
Be series at the collector electrode of positive-negative-positive triode Q8 and resistance R 13, resistance R 14 and the resistance R 15 between the NPN type triode Q9 collector electrode;
Collector electrode, the emitter that base stage is connected between R13 and the R14, collector electrode is connected in positive-negative-positive triode Q8 is connected in the NPN type triode Q13 of NPN type triode Q9 collector electrode.
Preferably, said dynamic bias module comprises:
The positive-negative-positive triode Q10 that collector electrode is connected on resistance R 14 and the resistance R 15, emitter is connected NPN type triode Q 13 base stages;
Be series at diode D2 and resistance R 17 between positive-negative-positive triode Q10 base stage and the ground.
Preferably, said output amplification module comprises:
Be series at NPN type triode Q14 and resistance R 21 between positive supply and the output amplification module output;
Be series at NPN type triode Q16 and resistance R 26 between positive supply and the output amplification module output;
Be series at positive-negative-positive triode Q15 and resistance R 22 and R23 between output amplification module output and the negative supply;
Be series at NPN type triode Q17 and resistance R 27 between output amplification module output and the negative supply;
Be parallel to the diode D3 at resistance R 22 two ends;
Be connected in the resistance R 24 of NPN type triode Q14 emitter and NPN type triode Q16 base stage;
Be connected in the resistance R 25 of positive-negative-positive triode Q15 collector electrode and NPN type triode Q17 base stage;
Be series at resistance R 28 and capacitor C 19 between output amplification module output and the ground;
Be parallel to inductance and resistance R 29 between output amplification module output and the load.
Visible by technique scheme, this transistor audio power amplifying apparatus of the present invention, circuit is simple, and element is common, with low cost, even use common components also can obtain good sound effect, then effect is better when using the high-quality element.Manufacture easily, circuit exempts from debugging, has only FET Q1, Q2 in the input amplification module to need pairing (can exempt from if use twin FET), the output power tube only needs simple pairing to meet the demands, and is particularly suitable for batch production large-scale production.Repacking is convenient, only need improve supply voltage when wanting to increase power output, perhaps uses the power output tube of bigger power output instead, perhaps adopts many parallel waies to power output tube to get final product.Efficient is high, and caloric value is low, and the power utilization rate is high, stable, reliability is high.The unique characteristics of acoustical quality; Have high-power, the fast speed of transistor power amplifier, the characteristics that wideband rings concurrently; Mellow, sweet, the submissive tonequality characteristics that have the electron tube power amplifier again, acoustical quality and power output surmount the main flow high-fidelity power amplifier integrate circuit LM3886 of the world today, TDA7293 and electron tube power amplifier etc. comprehensively.Have wide market application prospect, can be widely used in the power amplifiers such as high-fidelity family expenses, automobile, computer, stage.
Description of drawings
Fig. 1 is the high-fidelity transistor audio power amplifying apparatus structural representation of the embodiment of the invention.
Fig. 2 is the high-fidelity transistor audio power amplifying apparatus circuit diagram of another embodiment of the present invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, to further explain of the present invention.
Key of the present invention is to convert the audio signal of input into the audio frequency difference mode signal; In the FET that the audio frequency difference mode signal refers to link to each other through two source electrodes; The composite signal of the audio signal of the source electrode of two FETs; Convert the normal audio signal again into, make whole amplifying device form real circuit symmetrical operation state, thereby obtain the graceful audio signal of tonequality.
Fig. 1 is the high-fidelity transistor audio power amplifying apparatus structural representation of the embodiment of the invention, and as shown in Figure 1, this device comprises:
Difference mode signal modular converter 102 is used for the audio frequency difference mode signal that input amplification module 101 produces is changed and amplified; Accept the audio signal of auxiliary feedback module 104 feedbacks;
Difference mode signal quiescent biasing module 105 is used to difference mode signal modular converter 102 quiescent bias current is provided; Can improve the job stability of difference mode signal modular converter 102;
Active power filtering module 108 and 111 is used for the filter out power AC ripple; Can stablize the supply power voltage of input amplification module 101, voltage amplification module 103, difference mode signal modular converter 102 and auxiliary feedback module 104;
Principal voltage negative feedback module 109 is to input amplification module 101 feedback audio signals;
The prime amplifier section that wherein is made up of input amplification module 101, difference mode signal modular converter 102, voltage amplification module 103, auxiliary feedback module 104, difference mode signal quiescent biasing module 105 and principal voltage negative feedback module 109 can amplify as prime separately; Be used for senior pre-amplifier and Earphone Amplifier; The level amplifier section is formed complete amplifying device after also can arranging in pairs or groups arbitrarily; Certainly, adopt the present invention with it collocation design by quiescent biasing module 106, dynamic bias module 107, active power filtering module 108 and 111 and back grade of amplifier section forming of output amplification module 110, better effect is then arranged.
In the said apparatus; Except that difference mode signal modular converter 102, auxiliary feedback module 104 and difference mode signal quiescent biasing module 105, each module all can adopt existing typical circuit module to realize, certainly; For reaching optimum efficiency, can adopt circuit shown in Fig. 2 of the present invention.
As shown in Figure 2, wherein, input amplification module 101 comprises:
Be series at capacitor C 1 and resistance R 1 between audio signal input end and the resistance R 2;
Be parallel to resistance R 2 and capacitor C 2 between resistance R 1 and technotron Q1 grid and the ground;
Technotron Q1 and Q2 that source electrode links to each other;
Be series at the drain electrode of technotron Q1 and NPN type triode Q3 and the resistance R 6 between the prime positive supply (+VCC is through the power supply after the active power filtering module);
Be series at the drain electrode of technotron Q2 and the NPN type triode Q4 between the prime positive supply;
Be series at resistance R 7 and R8 between prime positive supply and the ground;
Be connected in continuous technotron Q1 grid of source electrode and the capacitor C 5 between the Q2 grid.
Wherein, audio signal gets into input amplification module 101 through capacitor C 1, resistance R 1, and R2 is the input resistance of Q1 grid, and C2 plays the superaudio high-frequency interferencing signal effect in the filtering input signal, prevents the amplifier self-excitation, and audio signal is had no influence.Q1, Q2 are the junction field differential pair tubes, and the two source electrode links to each other, and Q3, R6 are the drain electrode loads of Q1; Q4 is the drain electrode load of Q2, because the collector electrode of Q3 is to receive the prime positive supply through resistance R 6, and the collector electrode of Q4 is directly to have received the prime positive supply; It is thus clear that the drain electrode load of Q1, Q2 is unbalanced, the amplifying power of Q2 is greater than Q1, so just can access the audio frequency difference mode signal on the source electrode that is connected from Q1, Q2 (as long as input has the audio signal input; This audio frequency difference mode signal is just non-vanishing; And intensity changes along with the variation of input signal), the instantaneous polarity of its audio frequency difference mode signal depends on the instantaneous polarity of Q2 source electrode, when the instantaneous polarity of the audio signal of the Q1 grid input of input amplification module 101 is correct time; Circuit characteristic according to differential pair tube and this circuit can be known; The instantaneous polarity of the source electrode audio signal of Q2 is for negative, and the collector electrode that is attached thereto the Q7 that connects just can obtain instantaneous polarity and be negative differential mode audio signal, gets into difference mode signal modular converter 102.Capacitor C 5 is used for the filtering high-frequency interferencing signal, prevents the circuit high-frequency self-excitation.
Difference mode signal modular converter 102 comprises:
Be parallel to the resistance R 5 between positive-negative-positive triode Q6 base stage and the emitter;
Collector electrode connects the NPN type triode Q5 of positive-negative-positive triode Q6 base stage, emitter connection prime negative supply (VCC is through the power supply after the active power filtering module), base stage connection NPN type triode Q7 emitter;
Base stage connects the positive-negative-positive triode Q6 of NPN type triode Q5 collector electrode, emitter connection NPN type triode Q7 base stage;
Be series at source electrode that FET Q1, Q2 link to each other and NPN type triode Q7 and the resistance R 9 between the prime negative supply;
Be connected the resistance R 10 between positive-negative-positive triode Q6 collector electrode and the NPN type triode Q9 base stage.
Wherein, the instantaneous polarity that enters into difference mode signal modular converter 102 from the collector electrode of Q7 is negative differential mode audio signal, in the instantaneous polarity of the emitter of Q7 for just; The instantaneous polarity of the collector electrode of Q5 is for negative, and the emitter of Q6 has been had to small-signal from the base stage of Q7, is not enough to drive Q6; Q6 leans on Q5 to drive work; Thereby the instantaneous polarity of the base stage audio signal of Q6 depends on the instantaneous polarity of the collector signal of Q5, and this moment is for negative, and the instantaneous polarity of audio signal of the collector electrode of Q6 output is for just so.The Q9 base stage is being also for just, obtains instantaneous polarity at the collector electrode of Q9 and is negative audio signal.Meanwhile; The base stage of Q8 has obtained instantaneous polarity from the collector electrode of Q3 and has been negative audio signal, and the instantaneous polarity of the collector signal of Q8 is being for just, opposite with the instantaneous polarity of the collector signal of Q9 (when the instantaneous polarity of input signal of input amplification module 101 when bearing; Above situation is just in time opposite); With quiescent biasing module 106, dynamic bias module 107, output amplification module 110 is the load mutual superposition, real circuit symmetrical operation state occurs and has eliminated the switch distortion of triode, has reduced the audio frequency internal resistance simultaneously; Make frequency of sound wave be able to smooth expansion, extension, the space multistory effect of unique special charm that made sound generating.Its even-order harmonic is abundant, and lingering musical sound is good, produces the sound effect of similar discharge-tube amplifier, is rich in the music flavor.And the efficient of circuit is very high, and its efficient is similar to the efficient of bridge-tied load (BTL) amplifying circuit.
Base stage is connected the positive-negative-positive triode Q8 on NPN type triode Q3 collector electrode and the resistance R 6;
Be parallel to collector electrode and the capacitor C between the base stage 9 of positive-negative-positive triode Q8;
Be connected the emitter of positive-negative-positive triode Q8 and the resistance R 12 between the prime positive supply;
Base stage is connected the NPN type triode Q9 of resistance R 10 1 ends;
Be parallel to the capacitor C 8 between NPN type triode Q9 base stage and the collector electrode;
Be connected the resistance R 16 between NPN type triode Q9 emitter and the prime negative supply.
Be series at resistance R and capacitor C between FET Q2 grid and the NPN type triode Q7 emitter.
Compare with principal voltage negative feedback module 109; The signal feedback amount of this feedback circuit is very little, so be referred to as auxiliary feedback circuit, utilizes the RC filter circuit; Its frequency of oscillation has only more than ten hertz; Can in audiorange, not produce the feedback quantity crest, and in audiorange frequency low-feedback is big more more, this has just proofreaied and correct principal voltage negative feedback capacitance C6, the caused frequency distortion of C7.As far as audio signal is the voltage negative feedback; Concerning the back electromotive force that loud speaker produces, be form feed-in difference mode signal modular converter 102 with voltage positive feedback, main and auxiliary feedback signal compares in input amplification module 101 and difference mode signal modular converter 102 then; Produce one synchronous; With the opposite polarity amplifying signal of loud speaker back electromotive force, the back-emf signal that is produced when offsetting loudspeaker movements, thus reach the purpose of the transient intermodulation that reduces this amplifying device.
Difference mode signal quiescent biasing module 105 comprises:
Be series at and the prime negative supply between resistance R 3 and voltage stabilizing didoe D1;
Be parallel to capacitor C 3, the C4 at voltage stabilizing didoe D1 two ends;
Be connected the resistance R 4 of resistance R 3 non-earth terminals and positive-negative-positive triode Q6 emitter.
Wherein, the R3 current limliting also provides bias voltage for difference mode signal modular converter 102.D1 burning voltage, C3, C4 have further burning voltage effect.The supply current of R4 restriction difference mode signal modular converter 102.
Be series at the collector electrode of positive-negative-positive triode Q8 and resistance R 13, resistance R 14 and the resistance R 15 between the NPN type triode Q9 collector electrode;
Collector electrode, the emitter that base stage is connected between R13 and the R14, collector electrode is connected in positive-negative-positive triode Q8 is connected in the NPN type triode Q13 of NPN type triode Q9 collector electrode.
Typically, stable class AB quiescent current bias is provided for exporting amplification module 110 with the circuit structure of triode Q13 simulation voltage stabilizing didoe.
The positive-negative-positive triode Q10 that collector electrode is connected on resistance R 14 and the resistance R 15, emitter is connected NPN type triode Q13 base stage;
Be series at diode D2 and resistance R 17 between positive-negative-positive triode Q10 base stage and the ground.
When the absence of audio signal was imported, the Ube voltage of Q10 was zero, and dynamic bias module 107 is not worked at this moment; When audio signal was imported, along with the intensity increase of audio signal, the conducting degree of Q10 can be followed synchronous increase; Tube voltage drop U10ce reduces, and causes U13ce to increase synchronously, makes the electric current of output stage increase synchronously; Realize dynamic Class A bias, further reduce cross distortion.The size of dynamic bias amount is by the size decision of the resistance value of R17.
Active power filtering module 108,111 comprises:
Positive-negative-positive triode Q11 and NPN type triode Q12;
Capacitor C 10, C11, C12, C13, C14, C15, C17, C18;
Resistance R 18, R19.
RC filtering, and utilize the amplification of triode to strengthen filtering and voltage regulation result to the positive and negative power supply of prime.
Principal voltage negative feedback module 109 comprises:
Be connected FET Q2 grid and output amplification module output between parallel resistor R20 and capacitor C 16;
Be series at resistance R 11 and capacitor C 6 between FET Q2 grid and the ground;
Be parallel to the capacitor C 7 at capacitor C 6 two ends.
Utilize the dividing potential drop effect of R20 and R11 to carry out the principal voltage negative feedback, C6, C7 have the effect of handing at a distance from straight-through, the effect that C16 has high frequency phase compensation, improves amplifying circuit stability.
Be series at NPN type triode Q14 and resistance R 21 between positive supply+VCC and the output amplification module output;
Be series at NPN type triode Q16 and resistance R 26 between positive supply+VCC and the output amplification module output;
Be series at positive-negative-positive triode Q15 and resistance R 22 and R23 between output amplification module output and the negative supply-VCC;
Be series at NPN type triode Q17 and resistance R 27 between output amplification module output and the negative supply-VCC;
Be parallel to the diode D3 at resistance R 22 two ends;
Be connected in the resistance R 24 of NPN type triode Q14 emitter and NPN type triode Q16 base stage;
Be connected in the resistance R 25 of positive-negative-positive triode Q15 collector electrode and NPN type triode Q17 base stage;
Be series at resistance R 28 and capacitor C 19 between output amplification module output and the ground; Be parallel to inductance and resistance R 29 between output amplification module output and the load.
Accurate complementary power output grade circuit, Q14, Q15 are that electric current promotes triode, and Q16, Q17 are the power output triodes, and R22, D3 have the distorted signals of reducing effect, and R24, R25, R26, R27 have the effect that reduces power output triode matching request.
The concrete model and the parameter of each element that can adopt in Fig. 2 circuit, as follows:
In the parameter, being preferable model or parameter value before the bracket, is optional model or parameter area in the bracket;
1, resistance:
R1、R：1K（0-2.7K）；R2、R5、R20：47K（10K-100K）；R3：15K（4.7K-33K）；
R4：100K（10K-220K）；R6：2.2K（1K-5.6K）；R7：51K（10K-82K）；
R8：33K（10K-68K）；R9：560Ω（100Ω-2.2K）；R10：5.6K （1K-10K）；
R11：1.5K（100Ω-5.6K）；R12、R14-16、R21-25：100Ω（10Ω-680Ω）；
R13：620Ω（100Ω-2.2K）；R17：68K（10K-120K）；R18-19：1.2K（100Ω-10K）；
R26-27：0.25Ω（0.1Ω-0.5Ω）5W；R28-29：10Ω（4.7Ω-22Ω）1W。
2, electric capacity:
C1:4.7UF/50V (0.1UF-100UF) C:0.1UF/100V ceramics or electric capacity of the dacron (10PF-1UF);
C2、C5:100PF（5.1PF-220PF）C7:220UF/35V(10UF-470UF)；
C3:220UF/16V（10UF-470UF）C8、C9、C16：22PF/100V(5.1PF-100PF)；
C4、C6、C10-11、C15、C18：0.1UF/100V (0.01UF-1UF)；
C12-13：100UF/63V(10UF-470UF)C14、C17：47UF/63V(10UF-470UF)；
C19:0.1UF/400V(0.01UF-1UF)。
3, diode:
D1:6.8V voltage stabilizing didoe (1V-12V) D2, D3:1N4148 (switching diode).
4, triode:
Q1, Q2: FET K246 or K30A (K series technotron);
Q3, Q4, Q5, Q7, Q13:2N5551 (NPN type triode);
Q6, Q10:2N5401 (positive-negative-positive triode) Q8:A1013 (positive-negative-positive triode);
Q9:C2383 (NPN type triode) Q11:A940 (positive-negative-positive triode);
Q12:C2073 (NPN type triode) Q14:C2275 (NPN type triode);
Q15:A985 (positive-negative-positive triode) Q16, Q17:2SC5200 (NPN type triode);
5, inductance:
Diameter 1mm enamelled wire is cylinder Shangrao 13 circles (the 0.5-1.0mm enamelled wire is cylinder Shangrao 10-20 circle of 5-10mm at diameter) of 6mm at diameter.
Wherein, critical elements values of parameters size is to the influence of circuit:
R3: should do suitable adjustment according to the height of circuit supply voltage, electric current is got the 2-3 milliampere and is advisable.
R6: the size of resistance value influences the mid-point voltage of output, if Q1, Q2 pairing is bad, and can be through the height of its resistance value size adjustment mid-point voltage of adjustment.
R12, R15: resistance value is too small, and the quiescent current of Q8, Q9 can be too big, even burns Q8, Q9, when resistance value is too big, and the easy distortion of amplifying signal.
R17: the size of control dynamical feedback amount.
R: the little high loudness of a sound of resistance value, on the contrary high pitch weakens.
C1: capacity is little, a little less than the bass.Capacity is bigger, and better.
C2: capacity is little, no effect, and capacity is too big, a little less than the high pitch.
C3: capacity is little, a little less than the bass.Capacity is bigger, and better.
C5: capacity is little, no effect, and capacity is too big, a little less than the high pitch.
C: capacity is big, low loudness of a sound.Capacity is too little, no effect.
In addition, in order to obtain the good sound quality effect, all electrochemical capacitors and polarity free capacitor preferably all use noninductive electric capacity (except the capacitor C).
The power supply voltage of circuit (± VCC):
± 36V (± 25V is to ± 50V, and supply voltage is crossed and need be done suitably adjustment to the resistance value of resistance R 3, R7, R8 when low or too high).
In order to keep FET Q1, Q2 that the better linearity magnifying state is arranged, to different supply voltages, preferably guarantee their VDS, promptly the direct voltage between drain electrode and the source electrode is advisable at 10V to 12V.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being made, is equal to replacement, improvement etc., all should be included within the scope that the present invention protects.
Claims (10)
1. high-fidelity transistor audio power amplifying apparatus is characterized in that this device comprises:
The input amplification module is used to increase input resistance, the audio signal of input is amplified, and produce the audio frequency difference mode signal;
The difference mode signal modular converter is used for said audio frequency difference mode signal is changed and amplified output;
The voltage amplification module is used for the audio signal after said input amplification module and the amplification of difference mode signal modular converter is carried out voltage amplification;
Principal voltage negative feedback module is used for to said input amplification module feedback audio signal;
Auxiliary feedback module is used for to said difference mode signal modular converter feedback audio signal;
Difference mode signal quiescent biasing module is used to said difference mode signal modular converter quiescent bias current is provided.
2. transistor audio power amplifying apparatus as claimed in claim 1 is characterized in that, this device further comprises:
The output amplification module is used for the audio signal after the said voltage amplification module amplification is carried out power amplification output;
The quiescent biasing module is used to said output amplification module quiescent bias current is provided;
The dynamic bias module is used to said output amplification module dynamic bias is provided;
Two active power filtering modules are used for filter out power AC ripple and the positive and negative power source voltage of stable prime.
3. according to claim 1 or claim 2 transistor audio power amplifying apparatus is characterized in that said input amplification module comprises:
Be series at capacitor C 1 and resistance R 1 between audio signal input end and the resistance R 2;
Be parallel to resistance R 2 and capacitor C 2 between resistance R 1 and technotron Q1 grid and the ground;
Technotron Q1 and Q2 that source electrode links to each other;
Be series at the drain electrode of technotron Q1 and both hole and electron hole NPN type triode Q3 and resistance R 6 between the prime positive supply;
Be series at the drain electrode of technotron Q2 and the NPN type triode Q4 between the prime positive supply;
Be series at resistance R 7 and R8 between prime positive supply and the ground;
Be connected in continuous technotron Q1 grid of source electrode and the capacitor C 5 between the Q2 grid.
4. according to claim 1 or claim 2 transistor audio power amplifying apparatus is characterized in that said difference mode signal modular converter comprises:
Be parallel to the resistance R 5 between electron hole electronics positive-negative-positive triode Q6 base stage and the emitter;
Collector electrode connects the NPN type triode Q5 of positive-negative-positive triode Q6 base stage, emitter connection prime negative supply, base stage connection NPN type triode Q7 emitter;
Base stage connects the positive-negative-positive triode Q6 of NPN type triode Q5 collector electrode, emitter connection NPN type triode Q7 base stage;
Be series at source electrode that FET Q1, Q2 link to each other and NPN type triode Q7 and the resistance R 9 between the prime negative supply;
Be connected the resistance R 10 between positive-negative-positive triode Q6 collector electrode and the NPN type triode Q9 base stage.
5. according to claim 1 or claim 2 transistor audio power amplifying apparatus is characterized in that said voltage amplification module comprises:
Base stage is connected the positive-negative-positive triode Q8 on NPN type triode Q3 collector electrode and the resistance R 6;
Be parallel to collector electrode and the capacitor C between the base stage 9 of positive-negative-positive triode Q8;
Be connected the emitter of positive-negative-positive triode Q8 and the resistance R 12 between the prime positive supply;
Base stage is connected the NPN type triode Q9 of resistance R 10 1 ends;
Be parallel to the capacitor C 8 between NPN type triode Q9 base stage and the collector electrode;
Be connected the resistance R 16 between NPN type triode Q9 emitter and the prime negative supply.
6. according to claim 1 or claim 2 transistor audio power amplifying apparatus is characterized in that said auxiliary feedback module comprises:
Be series at resistance R and capacitor C between FET Q2 grid and the NPN type triode Q7 emitter.
7. according to claim 1 or claim 2 transistor audio power amplifying apparatus is characterized in that said difference mode signal quiescent biasing module comprises:
Be series at and the prime negative supply between resistance R 3 and voltage stabilizing didoe D1;
Be parallel to capacitor C 3, the C4 at voltage stabilizing didoe D1 two ends;
Be connected the resistance R 4 of resistance R 3 non-earth terminals and positive-negative-positive triode Q6 emitter.
8. transistor audio power amplifying apparatus as claimed in claim 2 is characterized in that, said quiescent biasing module comprises:
Be series at the collector electrode of positive-negative-positive triode Q8 and resistance R 13, resistance R 14 and the resistance R 15 between the NPN type triode Q9 collector electrode;
Collector electrode, the emitter that base stage is connected between R13 and the R14, collector electrode is connected in positive-negative-positive triode Q8 is connected in the NPN type triode Q13 of NPN type triode Q9 collector electrode.
9. transistor audio power amplifying apparatus as claimed in claim 2 is characterized in that, said dynamic bias module comprises:
The positive-negative-positive triode Q10 that collector electrode is connected on resistance R 14 and the resistance R 15, emitter is connected NPN type triode Q13 base stage;
Be series at diode D2 and resistance R 17 between positive-negative-positive triode Q10 base stage and the ground.
10. transistor audio power amplifying apparatus as claimed in claim 2 is characterized in that, said output amplification module comprises:
Be series at NPN type triode Q14 and resistance R 21 between positive supply and the output amplification module output;
Be series at NPN type triode Q16 and resistance R 26 between positive supply and the output amplification module output;
Be series at positive-negative-positive triode Q15 and resistance R 22 and R23 between output amplification module output and the negative supply;
Be series at NPN type triode Q17 and resistance R 27 between output amplification module output and the negative supply;
Be parallel to the diode D3 at resistance R 22 two ends;
Be connected in the resistance R 24 of NPN type triode Q14 emitter and NPN type triode Q16 base stage;
Be connected in the resistance R 25 of positive-negative-positive triode Q15 collector electrode and NPN type triode Q17 base stage;
Be series at resistance R 28 and capacitor C 19 between output amplification module output and the ground;
Be parallel to inductance and resistance R 29 between output amplification module output and the load.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101406189A CN102664596A (en) | 2012-05-08 | 2012-05-08 | High fidelity transistor audio power amplifying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101406189A CN102664596A (en) | 2012-05-08 | 2012-05-08 | High fidelity transistor audio power amplifying device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102664596A true CN102664596A (en) | 2012-09-12 |
Family
ID=46774031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101406189A Pending CN102664596A (en) | 2012-05-08 | 2012-05-08 | High fidelity transistor audio power amplifying device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102664596A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762951A (en) * | 2014-01-16 | 2014-04-30 | 四川和芯微电子股份有限公司 | Power amplifier |
| CN104283515A (en) * | 2014-10-28 | 2015-01-14 | 国家电网公司 | Power amplification circuit |
| CN109088608A (en) * | 2018-08-08 | 2018-12-25 | 义乌工商职业技术学院 | A kind of electronic equipment information processing system |
| CN113922768A (en) * | 2021-10-14 | 2022-01-11 | 深圳市昂佳科技有限公司 | Darlington tube high-fidelity audio power amplifier |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3244254C1 (en) * | 1982-11-30 | 1984-03-15 | Deutsche Thomson-Brandt Gmbh, 7730 Villingen-Schwenningen | Circuit for muting control of an AF power amplifier on activation and deactivation |
| US4638260A (en) * | 1984-09-21 | 1987-01-20 | Hamley James P | Audio amplifier |
| CN2257105Y (en) * | 1995-12-18 | 1997-06-25 | 江智新 | Voice frequency power amplifier without capacitor |
| JP2001284969A (en) * | 2000-03-31 | 2001-10-12 | Aiwa Co Ltd | Power amplifier |
| CN201365228Y (en) * | 2009-02-25 | 2009-12-16 | 陈红敏 | Pure post power amplifier with high fidelity, high linearity and broad frequency band |
| CN202602597U (en) * | 2012-05-08 | 2012-12-12 | 侯德亮 | High fidelity transistor audio power amplifying equipment |
-
2012
- 2012-05-08 CN CN2012101406189A patent/CN102664596A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3244254C1 (en) * | 1982-11-30 | 1984-03-15 | Deutsche Thomson-Brandt Gmbh, 7730 Villingen-Schwenningen | Circuit for muting control of an AF power amplifier on activation and deactivation |
| US4638260A (en) * | 1984-09-21 | 1987-01-20 | Hamley James P | Audio amplifier |
| CN2257105Y (en) * | 1995-12-18 | 1997-06-25 | 江智新 | Voice frequency power amplifier without capacitor |
| JP2001284969A (en) * | 2000-03-31 | 2001-10-12 | Aiwa Co Ltd | Power amplifier |
| CN201365228Y (en) * | 2009-02-25 | 2009-12-16 | 陈红敏 | Pure post power amplifier with high fidelity, high linearity and broad frequency band |
| CN202602597U (en) * | 2012-05-08 | 2012-12-12 | 侯德亮 | High fidelity transistor audio power amplifying equipment |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762951A (en) * | 2014-01-16 | 2014-04-30 | 四川和芯微电子股份有限公司 | Power amplifier |
| CN104283515A (en) * | 2014-10-28 | 2015-01-14 | 国家电网公司 | Power amplification circuit |
| CN109088608A (en) * | 2018-08-08 | 2018-12-25 | 义乌工商职业技术学院 | A kind of electronic equipment information processing system |
| CN109088608B (en) * | 2018-08-08 | 2022-01-18 | 义乌工商职业技术学院 | Electronic equipment information processing system |
| CN113922768A (en) * | 2021-10-14 | 2022-01-11 | 深圳市昂佳科技有限公司 | Darlington tube high-fidelity audio power amplifier |
| CN113922768B (en) * | 2021-10-14 | 2022-09-20 | 深圳市昂佳科技有限公司 | Darlington tube high-fidelity audio power amplifier |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102664596A (en) | High fidelity transistor audio power amplifying device | |
| CN203800893U (en) | Current-mode audio frequency amplifier | |
| CN103117718A (en) | High-fidelity transistor audio power amplifier | |
| WO2017083679A1 (en) | Method and apparatus to increase audio band microphone sensitivity | |
| CN2817213Y (en) | Audio frequency power amplifier | |
| CN202602597U (en) | High fidelity transistor audio power amplifying equipment | |
| CN201365228Y (en) | Pure post power amplifier with high fidelity, high linearity and broad frequency band | |
| TWI257766B (en) | Asynchronous BLT design for class-D audio amplifier | |
| CN203071876U (en) | High-fidelity transistor audio power amplifier | |
| CN106301259B (en) | A kind of pre-amplification circuit of D-type audio power amplifier | |
| CN206962785U (en) | One kind is concisely and efficiently Class A high-fidelity transistor audio power amplifying apparatus | |
| CN206302383U (en) | A kind of current feedback audio power amplifying apparatus | |
| CN2785256Y (en) | Current module high fidelity power amplifier | |
| CN104242842B (en) | A kind of drive amplification circuit of piezoelectric ceramics | |
| CN203984359U (en) | A kind of onboard audio power amplification circuit | |
| CN2280385Y (en) | Amplifier | |
| US8660276B2 (en) | Driving circuit for a sound outputting apparatus | |
| CN202841060U (en) | Quasi-linear stereo audio frequency amplifier with direct current vacuum tube | |
| CN201557244U (en) | Signal amplification circuit of guitar loudspeaker box | |
| CN103956980A (en) | Unrestrictive line voltage-following and power-buffering amplifier | |
| CN2324703Y (en) | Lower-transient intermodulation distortion audio-frequency amplifier | |
| CN201550265U (en) | Hifi class D acoustics for automobile | |
| CN1750386A (en) | High-fidelity power amplifier of current mode | |
| Rahman et al. | Design and implementation of a high performance AB-class amplifier using TDA2030 | |
| CN1016550B (en) | Audio-frequency power amplifier and double-winding voice-coil speaker |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20160113 |
|
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |