CN102662849B - The block management method of multi-channel flash memory - Google Patents
The block management method of multi-channel flash memory Download PDFInfo
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- CN102662849B CN102662849B CN201210058081.1A CN201210058081A CN102662849B CN 102662849 B CN102662849 B CN 102662849B CN 201210058081 A CN201210058081 A CN 201210058081A CN 102662849 B CN102662849 B CN 102662849B
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- 238000007726 management method Methods 0.000 title claims abstract description 9
- 238000013507 mapping Methods 0.000 claims description 22
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- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
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Abstract
The invention discloses a kind of block management method of multi-channel flash memory, flash memory comprises several blocks, and each piece is divided into M Physical Page, in M Physical Page, P logical page (LPAGE) in front P continuous print Physical Page and page map table maps one by one, and rear Q continuous print Physical Page is as reservation page; Establish a page write pointer for each piece, be used in reference to a blank page in block; Often write a page, described page write pointer adds 1.When carrying out the page write operation in object block, the Physical Page that a logical page (LPAGE) in P logical page (LPAGE) maps, if this Physical Page is empty, then writes data at this Physical Page; If this Physical Page non-NULL, then write the Physical Page of page write pointers point by data, be then rubbish page by original physical page marker, then the physical page address of write data is mapped to former logical page (LPAGE).The unit of data write operation of the present invention tapers to page from monoblock, avoids a large amount of erase operations, thus substantially increases the efficiency writing data, improves the life-span of flash memory.
Description
Technical field
The present invention relates to a kind of block management method of multi-channel flash memory.
Background technology
In order to improve effective bandwidth and the read-write efficiency of flash memory, existing multi-channel flash memory is generally divided into some pieces (block), and each piece is divided into several pages (page), and each page comprises several sectors (sector).During multi-channel flash memory read-write, addressing in units of each page; But for the write operation of each passage flash memory, be in units of block then.A kind of block management method of flash memory as disclosure of the invention that China Patent No. is 200710072980, described flash memory comprises several blocks, every block is made up of multiple page, every page is divided into data storage area and redundant area, in described block, delimit one or more as address mapping table reserved area, in units of page, preserve the logical address of flash memory block and the mapping table of physical address; A selected blank block in return block, sets up the address maps list item of this swap block in the redundant area of described mapping table preservation page; When carrying out write operation, according to address map information, described swap block is write accordingly by new data and/or by the legacy data of the target block operated, erasing target block, then exchanges physical address corresponding with target block logical address for physical address corresponding for swap block logical address in mapping table page.This invention can effectively extend flash memory serviceable life while guarantee operating speed, and improves the security of flash data.
But for the application scenario of small data quantity write operation frequently, such scheme causes the frequently erasable of the block of flash memory, limits flash memory device operating efficiency, damages the serviceable life of flash memory.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of block management method of new multi-channel flash memory, further improves flash memory device operating efficiency, extends the serviceable life of flash memory.
For solving the problems of the technologies described above, the invention provides a kind of block management method of new multi-channel flash memory, described flash memory comprises several blocks, each piece is divided into M Physical Page, it is characterized in that, in a described M Physical Page, P logical page (LPAGE) in front P continuous print Physical Page and page map table maps one by one, rear Q continuous print Physical Page is as retaining page, M=P+Q; Establish a page write pointer for each piece, be used in reference to a blank page in block; When Physical Page all in block are blank, described page write pointer value is 1; Often write a page, described page write pointer adds 1.
When carrying out the page write operation in object block, in P logical page (LPAGE) of object block, choosing a logical page (LPAGE), this Physical Page choosing logical page (LPAGE) to map, if choose Physical Page to be empty, then writing data at this Physical Page; If choose Physical Page to there is data, non-NULL, then data are write the Physical Page of described page write pointers point, then described Physical Page of choosing is labeled as rubbish page, then choose logical page (LPAGE) described in the physical page address of write data being mapped to.
The scheme of further optimization, when the described page write operation carried out in object block, first judge whether described page write pointer value is greater than M, if described page write pointer value is greater than M, namely, when reservation page in object block is all write, obtain a swap block, non-junk page in object block, i.e. valid data page are copied one by one in P Physical Page of described swap block, then, the physical address that physical address corresponding for swap block logical address in mapping table is corresponding with former object block logical address exchanges, more former object block is emptied.Now, described swap block becomes data block, and its page of write pointer value is P+1, and former object block becomes swap block.Then data writing operation is carried out according to new address mapping table and page write pointer.
If described page write pointer value is not more than M, then directly carry out data writing operation according to address mapping table and page write pointer.
Beneficial effect: when Host end will write a page data, this method is directly programmed to page, instead of writes the data of whole piece.When Host end will repeat to write to same logical page (LPAGE), be mapped to different Physical Page by page map table, thus realize page programming, and this block need not be wiped the data writing whole piece again.Because the unit of data write operation tapers to page from monoblock, avoid a large amount of erase operations, thus substantially increase the efficiency writing data, improve the life-span of flash memory.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, technical scheme of the present invention is further described in detail.
Fig. 1 is the logical page (LPAGE) of a block and the mapping schematic diagram of Physical Page.
When Fig. 2 is for writing N page operations, the mapping pair of logical page (LPAGE), Physical Page is according to figure.
Fig. 3 is for when page write pointer is greater than M, and the mapping pair that data block, swap block exchange is according to figure.
Fig. 4 is flash reading and writing process flow diagram of the present invention.
Embodiment
As shown in Figure 1, the addresses map table on the left side comprises 0 ~ 47 totally 48 logical page (LPAGE)s, and the block table on the right comprises 0 ~ 63 M=64 Physical Page altogether, and front P=48 of 64 Physical Page maps one by one with 48 logical page (LPAGE)s, and a rear Q=16 Physical Page is as retaining page.
Establish a page write pointer for each piece, be used in reference to a blank page in block; When Physical Page all in block are blank, page write pointer value is 1, namely points to the 0th Physical Page; Often write a page, page write pointer adds 1.
As shown in Figure 2, when in object block, certain Physical Page carries out write operation, first, by logical page (LPAGE) addressing, in 48 logical page (LPAGE)s of object block, choose N logical page (LPAGE), N logical page (LPAGE) is mapped to N Physical Page.Now, if N Physical Page has existed data, non-NULL, then the 48th Physical Page being positioned at reservation page table of data write page write pointers point, has then been labeled as rubbish page by N Physical Page, then by the address maps of current 48th Physical Page to N logical page (LPAGE).
As shown in Figure 3, when after repeatedly page write operation, page write pointer value is greater than M, and 16 namely in object block retain pages when all being write, application acquisition swap block, copies the non-junk page in object block, i.e. valid data page one by one in P Physical Page of swap block.Special instruction, those skilled in the art should learn, the valid data number of pages order now in object block is exactly P=48.Then, the physical address that physical address corresponding for swap block logical address in mapping table is corresponding with former object block logical address exchanges, then object block is emptied.Now, swap block becomes new data block, and the page write pointer value of new data block is P+1, namely points to the 48th Physical Page.Former object block becomes swap block.
Below in conjunction with Fig. 4, the flash reading and writing flow process that the present invention is overall is described.First, flash memory enters normal operating conditions, the read write command that wait-receiving mode main frame Host sends, after receiving the read write command that Host sends, flash controller carries out address mapping table conversion, comprise and be transformed into physical block address by LBA (Logical Block Addressing), logical page address is transformed into physical page address, if be read data, is then addressed to Physical Page according to the mapping address of address mapping table, read this number of physical pages certificate, then return.If for writing data, then judge whether page write pointer exceeds threshold value, namely whether the value of page write pointer is greater than M, if not, then performs according to address mapping table and page write pointer, data write flash memory step, and scheduler mapping table step.Specifically comprise: in P logical page (LPAGE) of object block, choose a logical page (LPAGE), this Physical Page choosing logical page (LPAGE) to map, if choose Physical Page to be empty, then write data at this Physical Page; If choose Physical Page to there is data, non-NULL, then data are write the Physical Page of described page write pointers point, then described Physical Page of choosing is labeled as rubbish page, then choose logical page (LPAGE) described in the physical page address of write data being mapped to.Illustrate see Fig. 2.
If, namely, when reservation page in object block is all write, obtain a swap block, non-junk page in object block, i.e. valid data page are copied one by one in P Physical Page of swap block, then, the physical address that physical address corresponding for swap block logical address in mapping table is corresponding with former object block logical address exchanges, more former object block is emptied.Now, swap block becomes data block, and its page of write pointer value is P+1, and former object block becomes swap block.And then perform according to address mapping table and page write pointer, data write flash memory step, scheduler mapping table step, really completes the write operation of data.
It should be noted last that, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although with reference to preferred embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (2)
1. a block management method for multi-channel flash memory, described flash memory comprises several blocks, and each piece is divided into M Physical Page, it is characterized in that, each piece of correspondence page map table, and each page map table is divided into P logical page (LPAGE); In a described M Physical Page, P logical page (LPAGE) in front P continuous print Physical Page and page map table maps one by one, rear Q continuous print Physical Page as reservation page, M=P+Q; Establish a page write pointer for each piece, be used in reference to a blank page in block; When Physical Page all in block are blank, described page write pointer value is 1; Often write a page, described page write pointer adds 1;
When carrying out the page write operation in object block, in P logical page (LPAGE) of object block, choosing a logical page (LPAGE), this Physical Page choosing logical page (LPAGE) to map, if choose Physical Page to be empty, then writing data at this Physical Page; If choose Physical Page to there is data, non-NULL, then data are write the Physical Page of described page write pointers point, then described Physical Page of choosing is labeled as rubbish page, then choose logical page (LPAGE) described in the physical page address of write data being mapped to.
2. the block management method of multi-channel flash memory according to claim 1, it is characterized in that, when the described page write operation carried out in object block, first judge whether described page write pointer value is greater than M, if described page write pointer value is greater than M, namely, when reservation page in object block is all write, obtain a swap block, by the non-junk page in object block, namely valid data page copies one by one in P Physical Page of described swap block, then, the physical address that physical address corresponding for swap block logical address in mapping table is corresponding with former object block logical address exchanges, again former object block is emptied, now, described swap block becomes data block, and its page of write pointer value is P+1, and former object block becomes swap block, then data writing operation is carried out according to new address mapping table and page write pointer,
If described page write pointer value is not more than M, then directly carry out data writing operation according to address mapping table and page write pointer.
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| EP3394758A4 (en) * | 2017-01-23 | 2019-02-20 | Micron Technology, Inc. | Partially written block treatment |
| CN110287129B (en) * | 2019-06-27 | 2021-07-13 | 深圳忆联信息系统有限公司 | L2P table updating and writing management method and device based on solid state disk |
| CN110471626B (en) * | 2019-08-15 | 2023-04-25 | 无锡融卡科技有限公司 | Nor Flash management layer and method applied to Java Card |
| CN112506438B (en) * | 2020-12-14 | 2024-03-26 | 深圳大普微电子科技有限公司 | Mapping table management method and solid state disk |
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| CN1281562A (en) * | 1997-10-16 | 2001-01-24 | M-系统快闪盘开拓者公司 | Improved flash file system |
| CN101030167A (en) * | 2007-01-17 | 2007-09-05 | 忆正存储技术(深圳)有限公司 | Flash-memory zone block management |
| CN101075211A (en) * | 2007-06-08 | 2007-11-21 | 马彩艳 | Flash memory management based on sector access |
| CN101123116A (en) * | 2006-08-09 | 2008-02-13 | 安国国际科技股份有限公司 | Memory device and its reading and writing method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1281562A (en) * | 1997-10-16 | 2001-01-24 | M-系统快闪盘开拓者公司 | Improved flash file system |
| CN101123116A (en) * | 2006-08-09 | 2008-02-13 | 安国国际科技股份有限公司 | Memory device and its reading and writing method |
| CN101030167A (en) * | 2007-01-17 | 2007-09-05 | 忆正存储技术(深圳)有限公司 | Flash-memory zone block management |
| CN101075211A (en) * | 2007-06-08 | 2007-11-21 | 马彩艳 | Flash memory management based on sector access |
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