CN102662210A - Plasma excimer gain waveguide - Google Patents
Plasma excimer gain waveguide Download PDFInfo
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- CN102662210A CN102662210A CN201210061093XA CN201210061093A CN102662210A CN 102662210 A CN102662210 A CN 102662210A CN 201210061093X A CN201210061093X A CN 201210061093XA CN 201210061093 A CN201210061093 A CN 201210061093A CN 102662210 A CN102662210 A CN 102662210A
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Abstract
The invention relates to the field of optical waveguide technology. The invention provides a plasma excimer gain waveguide, including a base layer, a medium layer, an isolation layer and a gain waveguide. The medium layer is placed on the bare surface of the base layer. The isolation layer is between the medium layer and the gain waveguide. One end of the gain waveguide near the dielectric layer is wedge-shaped and the tip faces the dielectric layer. The refractive index of the gain waveguide is greater than that of the isolation layer. The plasma excimer gain waveguide has the advantages that one end of the gain waveguide near the dielectric layer is wedge-shaped, the distance between the top of the wedge-shaped structure and the metal is fixed, the isolation layer with low refractive index is kept, and the plasma excimer coupling of the gain waveguide and the metal is improved by adjusting the angle of the wedge-shaped point angle.
Description
Technical field
The present invention relates to the optical waveguide technique field, relate in particular to a kind of plasmon gain waveguide.
Background technology
Collective's concussion that the electron gas at inter metal dielectric interface produces under electromagnetic excitation coupling has showed unusual optical characteristics, just so-called surface plasmons characteristic.Its distribution of light intensity is exponential decay on metal and dielectric interface place vertical direction, can constrain light in metal surface tens nanometers even littler scope, can break through the restriction of traditional optical diffraction limit.This superpower optics locality of surface plasmons makes it show huge application potential in fields such as nanophotonics and photoelectricity are integrated, and maybe for realizing that the nanometer laser light source provides with high integrated nanophotonics device.
In the integrated practical application of nano-photon, the optical waveguide structure of ultra local and long propagation is the importance that realizes that photonic device is microminiaturized.Plasmon optical waveguide has limited the application in its practical devices realizing inevitably having introduced bigger metal fever loss when strong local light is propagated.Wherein a kind of very promising method that addresses this problem is based on the optical gain media, such as fluorescence molecule, and quantum dot, semiconductor quantum well gain medias etc. are incorporated in the plasmon optical waveguide to compensate its transmission loss (TL).This method not only can realize compensating transmission loss (TL), even can produce the sharp lase of plasmon.The Xiang group study of opening of California, USA Berkeley University is found, between gain semiconductor nanowires waveguide and metal, introduces the separation layer of one deck low-refraction, can the light local in the gain waveguide be propagated in the separation layer of low-refraction.Because the cube of the thermal loss that the plasmon that metal gain waveguide interface produces propagation is introduced and the refractive index of gain media is directly proportional; Therefore this structure can reduce the spread heat loss of the plasmon hydridization waveguide of high index of refraction gain waveguide and metal coupling generation, can keep higher locality simultaneously.But exist the contradiction of gain for threshold value and locality in this spline structure equally; In order to reduce the gain for threshold value that gain waveguide coupling plasma excimer is propagated; Can let the gain waveguide structure away from metal through increasing the thickness of separation layer, the energy of plasmon can shift in gain waveguide like this; Thereby reduce the metal fever loss, reduced gain for threshold value.But can make the coupling of gain waveguide and metal plasma excimer weaken like this, the locality variation of light.Corresponding with it plasmon waveguide laser gain for threshold value increases.
Summary of the invention
Technical matters to be solved by this invention is that a kind of plasmon gain waveguide is provided.
In order to address the above problem; The invention provides a kind of plasmon gain waveguide; Comprise basalis, dielectric layer, separation layer and gain waveguide, said dielectric layer places the exposed surface of basalis, and said separation layer is between said dielectric layer and said gain waveguide; Said gain waveguide is wedge shape and most advanced and sophisticated towards said dielectric layer near an end of said dielectric layer, and the refractive index of said gain waveguide is greater than the refractive index of said separation layer.
The ratio range of the electromagnetic wavelength of propagating in the distance between the most advanced and sophisticated and said dielectric layer of the tapered end of said gain waveguide and the waveguide is 0.01 to 0.1.
The angular range at the tip of the tapered end of said gain waveguide is 10 ° to 180 °, and the ratio range of the electromagnetic wavelength of propagating in the wedge shape height of the tapered end of said gain waveguide and the waveguide is 0.05 to 1.
The ratio of the refractive index of said separation layer and the refractive index of said gain waveguide is less than 0.75.
The material of said gain waveguide is organic material or inorganic material; Said organic material is to contain any one of fluorescence molecule organic polymer, macromolecule luminous organic material; Said inorganic material be in cadmium sulfide, zinc paste, gallium nitride, gallium arsenide, the cadmium selenide any one.
Quantum well structure or the superlattice structure of the structure of said gain waveguide for forming through element doping.
Said gain waveguide is cylinder away from an end of said dielectric layer, and horizontal section be square, rectangle, triangle, in trapezoidal any one.
The ratio range of the electromagnetic wavelength of propagating in the electromagnetic wave waveguide of propagating in the width of the longitudinal profile of said gain waveguide and the waveguide is 0.1 to 2, and the ratio range of the electromagnetic wavelength of propagating in the electromagnetic wave waveguide of propagating in the height of longitudinal profile and the waveguide is 0.05 to 3.
The ratio range of the electromagnetic wavelength of propagating in the electromagnetic wave waveguide of propagating in the thickness of said dielectric layer and the waveguide is 0.1 to 0.5.
The material of said dielectric layer is grapheme material or metal material; Said metal material is any one or a few a alloy in gold, silver, aluminium, copper, titanium, nickel, the chromium.
The invention has the advantages that:
1. through the coupling of gain waveguide wedge structure surface and metal, improve the locality of plasmon hydridization wave guide mode greatly, kept long propagation distance simultaneously.
2. through regulating the drift angle angular dimension of gain waveguide wedge structure, can not change the separation layer thickness of low-refraction, regulate the stiffness of coupling of gain waveguide structure and metal plasma excimer.The distance that keeps the top and the metal surface of wedge structure simultaneously can be kept the local intensity of light, and improve the propagation distance of plasmon hydridization waveguide.
Description of drawings
Fig. 1 is the structural drawing of a kind of plasmon gain waveguide embodiment one provided by the invention;
Fig. 2 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention under different separation layer thickness along with the change curve of wedge shape height;
Fig. 3 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, the transmission range of the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention under different separation layer thickness along with the change curve of wedge shape height;
Fig. 4 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, and the effective die face of normalization of the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention is amassed under different separation layer thickness the change curve along with the wedge shape height;
Fig. 5 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, and the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention goes out the distribution curve of the electromagnetic energy density of light field at directions X apart from metallic upper surface 2.5 nanometers under two kinds of wedge shape height;
Fig. 6 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, and the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention is at the electromagnetic energy density of the two kinds of wedge shape height waveguide middle light fields distribution curve in the Y direction;
Fig. 7 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, and the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention is that 5nm wedge shape height is the electromagnetic energy density distribution plan of 100nm time field energy at separation layer thickness;
Fig. 8 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, and the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention is that 25nm wedge shape height is the electromagnetic energy density distribution plan of 0nm time field energy at separation layer thickness;
Fig. 9 is the structural drawing of a kind of plasmon gain waveguide embodiment two provided by the invention;
Figure 10 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, the plasmon pattern of a kind of plasmon gain waveguide embodiment two provided by the invention under different separation layer thickness along with the change curve of wedge shape height;
Figure 11 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, the transmission range of the plasmon pattern of a kind of plasmon gain waveguide embodiment two provided by the invention under different separation layer thickness along with the change curve of wedge shape height;
Figure 12 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, and the effective die face of normalization of the plasmon pattern of a kind of plasmon gain waveguide embodiment two provided by the invention is amassed under different separation layer thickness the change curve along with the wedge shape height;
Figure 13 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, and the plasmon pattern of a kind of plasmon gain waveguide embodiment two provided by the invention is that 5nm wedge shape height is the electromagnetic energy density distribution plan of 70nm time field energy at separation layer thickness;
Figure 14 is the electromagnetic wavelength propagated in the gain waveguide when being 500nm, and the plasmon pattern of a kind of plasmon gain waveguide embodiment two provided by the invention is that 25nm wedge shape height is the electromagnetic energy density distribution plan of 0nm time field energy at separation layer thickness.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to a kind of plasmon gain waveguide provided by the invention.
The mode characteristic that surface plasmon wave is led is the important indicator that characterizes the plasmon waveguide.Wherein mode characteristic mainly includes the real part of imitating refractive index, propagation distance, and effectively die face is long-pending.
Effectively die face is long-pending is the local strength characteristic that is used for characterizing field intensity, is defined as the ratio of pattern integral energy density and energy density peak.The calculation expression of effective model area is following:
Wherein, A
mFor effectively die face is long-pending, W
mAnd W (r) is respectively the electromagnetic energy and the energy density of plasmon waveguide.Max{W (r) } be maximum energy-density.ε (r), μ
0Be respectively plasmon waveguide effective dielectric constant and vacuum magnetic specific inductive capacity.E (r), H (r) is respectively the electric field intensity and the magnetic field intensity of plasmon waveguide.The long-pending A of the effective die face of normalization is:
A＝A
m/A
0
A
0＝λ
2/4
A wherein
0Area for the diffraction limit mould.Wherein λ propagates wavelength for the surface plasmon wave leaded light.The long-pending size of the effective die face of normalization characterizes the light local ability of pattern, and this value is less than 1 the situation dimension constraint corresponding to sub-wavelength, when this value much smaller than 1 the time, corresponding dark sub-wavelength light field constraint ability.
Distance when the propagation distance of plasmon waveguide is defined as electric field intensity in the plasmon waveguide and decays to the 1/e of initial value, its calculation expression is:
L
m＝1/(2Im(k))
Wherein k is the complex propagation vector on the plasmon duct propagation direction, and Im (k) is the real part of complex propagation vector, L
mPropagation distance for the plasmon waveguide.
Embodiment one:
Shown in Figure 1 is the structural drawing of a kind of plasmon gain waveguide embodiment one provided by the invention.X-axle wherein among Fig. 1, y-axle and z-axle be representative coordinates axle x axle, y axle and z axle respectively, and the direction of z axle be surperficial perpendicular to scheming, and the forward of z axle is for outwardly.
Present embodiment one provides a kind of plasmon gain waveguide 103; Comprise basalis 101, dielectric layer 102, separation layer 111 and gain waveguide 103; Said dielectric layer 102 places the exposed surface of basalis 101; Said separation layer 111 is between said dielectric layer 102 and said gain waveguide 103, and said gain waveguide 103 is wedge shape and most advanced and sophisticated towards said dielectric layer 102 near an end of said dielectric layer 102, and the refractive index of said gain waveguide 103 is greater than the refractive index of said separation layer 111.
The wedge shape height of the tapered end of the said gain waveguide 103 of Δ 1 representative shown in Fig. 1; H11 represents the height of gain waveguide 103 longitudinal profiles; H12 represents the distance of 102 of most advanced and sophisticated and said dielectric layers of the tapered end of gain waveguide 103; H13 represents the thickness of dielectric layer 102, and W1 represents the width of gain waveguide 103 longitudinal profiles, the angle at the tip of the tapered end of the said gain waveguide 103 of α 1 representative.
Said longitudinal profile refers to from the exposed surface direction perpendicular to dielectric layer 102 and dissects.
The ratio range of the electromagnetic wavelength of propagating in H12 and the waveguide is 0.01 to 0.1, choose the light wave of wavelength 500nm in the present embodiment and propagate wavelength as gain waveguide 103, and H12 is taken as 5nm, 10nm, 25nm and 50nm respectively in above-mentioned scope; α 1 scope is 53 °-180 ° in the present embodiment; The scope of Δ 1 is 0nm to 400nm in the present embodiment; W1 gets 400nm in the present embodiment; H13 gets 300nm in the present embodiment.
The ratio of the refractive index of the refractive index of said separation layer 111 and said gain waveguide 103 is less than 0.75; The material of said gain waveguide 103 is organic material or inorganic material; Said organic material is to contain any one of fluorescence molecule organic polymer, macromolecule luminous organic material; Said inorganic material be in cadmium sulfide, zinc paste, gallium nitride, gallium arsenide, the cadmium selenide any one; Quantum well structure or the superlattice structure of the structure of said gain waveguide 103 for forming through element doping.
Said gain waveguide 103 is cylinder away from an end of said dielectric layer 102, and horizontal section be square, rectangle, triangle, in trapezoidal any one; The longitudinal profile of said gain waveguide 103 is a rectangle, and the ratio range of the electromagnetic wavelength of propagating in W1 and the waveguide is 0.1-2, and the ratio range of the electromagnetic wavelength of propagating in H11 and the waveguide is 0.1 to 2.In the present embodiment, the material of separation layer 111 adopts low-index material MgF
2, the real part of refractive index is 1.38; The material of gain waveguide 103 adopts GaN/InGaN quantum well sill, and the real part of refractive index is 2.4.
Said horizontal section refers to from the exposed surface direction that is parallel to dielectric layer 102 and dissects.
The ratio range of the electromagnetic wavelength of propagating in H13 and the waveguide is 0.1 to 0.5; The material of said dielectric layer 102 is grapheme material or metal material; Said metal material is any one or a few a alloy in gold, silver, aluminium, copper, titanium, nickel, the chromium.Adopt ag material in the present embodiment, and H13 gets 300nm, multiple dielectric function dispersion relation is:
E
p=9.5eV, γ=0.04eV.Wherein, ε
AgBe the multiple dielectric function of silver, ε
bBe the electric medium constant part of silver, E
pBe the plasma oscillation energy of the free electron gas of silver, γ is the vibration relaxation time of the free electron gas of silver, and E is electromagnetic oscillation energy.
Use full vector Finite Element Method that emulation has been carried out in present embodiment gain waveguide, calculate 500nm wavelength gain hydridization waveguide mode characteristic.
Shown in Figure 2 when being 500nm for the electromagnetic wavelength of propagating in the gain waveguide, the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention under different separation layer thickness along with the change curve of wedge shape height.Visible by Fig. 2, the effective refractive index of the plasmon hydridization pattern of said plasmon gain waveguide reduces along with the increase of Δ 1, and whole size reduces along with the increase of H12.
Shown in Figure 3 when being 500nm for the electromagnetic wavelength of propagating in the gain waveguide, the transmission range of the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention under different separation layer thickness along with the change curve of wedge shape height.Visible by Fig. 3, the transmission range of the plasmon hydridization pattern of said plasmon gain waveguide increases along with the increase of Δ 1.And whole propagation distance increases along with the increase of H12.Therefore can increase propagation distance through the height that changes wedge shape, and needn't change the thickness of the separation layer of low-refraction.As when H12 is 5nm, Δ 1 is 25nm for the propagation distance of 100nm and H12, and the propagation distance when Δ 1 is 0nm is suitable.
Shown in Figure 4 when being 500nm for the electromagnetic wavelength of propagating in the gain waveguide, the effective die face of normalization of the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention is amassed under different separation layer thickness the change curve along with the wedge shape height.Visible by Fig. 4, effective die face of the plasmon hydridization pattern of said plasmon gain waveguide amasss that first the minimizing afterwards increases along with the increase of Δ 1 when H12 is respectively 5nm and 10nm.Increase along with the increase of H12 and the entire effective die face is long-pending.It is long-pending that but the existence that can see wedge shape can reduce effective die face significantly.As being 5nm as H12, propagation distance and H12 when Δ 1 is 100nm are 25nm, and the propagation distance when Δ 1 is 0nm is suitable.But its effective die face is long-pending much smaller than the latter.The increase of also just saying H12 can effectively improve propagation distance, but the increase that its effective die face is amassed is rapider, and when not changing H12, can effectively slow down long-pending the gathering way of effective die face through regulating Δ 1.
Shown in Figure 5 when being 500nm for the electromagnetic wavelength of propagating in the gain waveguide, the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention goes out the distribution curve of the electromagnetic energy density of light field at directions X apart from metallic upper surface 2.5 nanometers under two kinds of wedge shape height.Visible by Fig. 5, be 5nm at H12, the gain optical waveguide of Δ 1 during for 100nm is that 25nm is that Δ 1 is that 0 o'clock light field is more concentrated at directions X than H12, mould field size is littler.
Shown in Figure 6 when being 500nm for the electromagnetic wavelength of propagating in the gain waveguide, the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention is at the electromagnetic energy density of the two kinds of wedge shape height waveguide middle light fields distribution curve in the Y direction.Visible by Fig. 6, when H12 was 5nm, Δ 1 was that the light field of 25nm when not having wedge shape more concentrates in the separation layer of low-refraction in the Y direction for the gain optical waveguide of 100nm than H12.And H12 is when being 25nm, a little less than the coupling of plasmon and gain optical waveguide, concentrated a large amount of electromagnetic energies in the optical waveguide that causes gaining, and its mould field size is relatively large.
Shown in Figure 7 for being the electromagnetic wavelength propagated in the gain waveguide when being 500nm, the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention is that 5nm wedge shape height is the electromagnetic energy density distribution plan of 100nm time field energy at separation layer thickness.Can be found out that by Fig. 7 coupling has taken place the plasmon of wedge-shaped waveguide and metal surface, most of Energy Efficient occupy the tip at wedge-shaped waveguide.
Shown in Figure 8 when being 500nm for the electromagnetic wavelength of propagating in the gain waveguide, the plasmon pattern of a kind of plasmon gain waveguide embodiment one provided by the invention is that 25nm wedge shape height is the electromagnetic energy density distribution plan of 0nm time field energy at separation layer thickness.Can find out by Fig. 8, when having wedge structure and wedge-shaped waveguide structure-borne distance quite, Δ 1 be the main local of light field energy of 0nm structured waveguide in gain waveguide, at this moment, a little less than waveguiding structure and metal plasma excimer were coupled, energy local mode area was bigger.
Calculate embodiment one said waveguide in the 500nm wavelength, a kind of H12 is 5nm, and Δ 1 is 100nm; Another kind of H12 is 25nm; Δ 1 is 0nm, under the both of these case hydridization duct propagation distance quite, but before a kind of local pattern area of waveguide of situation much smaller than second kind of situation.First kind of situation pattern area is 0.08 λ
2/ 4, and the pattern area of second kind of situation is 0.9 λ
2/ 4.Therefore than traditional hydridization gain waveguide structure, choose the height of suitable wedge shape, embodiment one said gain waveguide can realize the light field propagation of low-loss and strong local simultaneously, and further reduction gain for threshold value is provided maybe.
Embodiment two:
Shown in Figure 9 is the structural drawing of a kind of plasmon gain waveguide embodiment two provided by the invention.X-axle wherein among Fig. 9, y-axle and z-axle be representative coordinates axle x axle, y axle and z axle respectively, and the direction of z axle be surperficial perpendicular to scheming, and the forward of z axle is for outwardly.
Present embodiment provides a kind of plasmon gain waveguide 903; Comprise basalis 901, dielectric layer 902, separation layer 904 and gain waveguide 903; Said dielectric layer 902 places the exposed surface of basalis 101; Said separation layer 904 is between said dielectric layer 902 and said gain waveguide 903, and said gain waveguide 903 is wedge shape and most advanced and sophisticated towards said dielectric layer 902 near an end of said dielectric layer 902, and the refractive index of said gain waveguide 903 is greater than the refractive index of said separation layer 904.
The wedge shape height of the tapered end of the said gain waveguide 903 of Δ 9 representatives shown in Fig. 9; H91 represents the height of gain waveguide 903 longitudinal profiles; H92 represents the distance of 902 of most advanced and sophisticated and said dielectric layers of the tapered end of gain waveguide 903; H93 represents the thickness of dielectric layer 902, and W9 represents the width of gain waveguide 903 longitudinal profiles, the angle at the tip of the tapered end of the said gain waveguide 903 of α 9 representatives.
The ratio range of the electromagnetic wavelength of propagating in H92 and the waveguide is 0.01 to 0.1, choose the light wave of wavelength 500nm in the present embodiment and propagate wavelength as gain waveguide 903, and H92 is taken as 5nm, 10nm, 25nm and 50nm respectively in above-mentioned scope; α 1 scope is 26.5 ° to 90 ° in the present embodiment; The scope of Δ 9 is 0nm to 400nm in the present embodiment; W9 gets 400nm in the present embodiment; H93 gets 300nm in the present embodiment.
The ratio of the refractive index of the refractive index of said separation layer 904 and said gain waveguide 903 is less than 0.75; The material of said gain waveguide 903 is organic material or inorganic material; Said organic material is to contain any one of fluorescence molecule organic polymer, macromolecule luminous organic material; Said inorganic material be in cadmium sulfide, zinc paste, gallium nitride, gallium arsenide, the cadmium selenide any one; Quantum well structure or the superlattice structure of the structure of said gain waveguide 903 for forming through element doping.Said gain waveguide 903 is cylinder away from an end of said dielectric layer 902, and horizontal section be square, rectangle, triangle, in trapezoidal any one; The longitudinal profile of said gain waveguide 903 is a rectangle, and the ratio range of the electromagnetic wavelength of propagating in W9 and the waveguide is 0.1 to 2, and the ratio range of the electromagnetic wavelength of propagating in H91 and the waveguide is 0.1 to 2.In the present embodiment, the material of separation layer 904 adopts low-index material MgF
2, the real part of refractive index is 1.38; The material of gain waveguide 903 adopts GaN/InGaN quantum well sill, and the real part of refractive index is 2.4.
The ratio range of the electromagnetic wavelength of propagating in the thickness of said dielectric layer 902 and the waveguide is 0.1 to 0.5; The material of said dielectric layer 902 is grapheme material or metal material; Said metal material is any one or a few a alloy in gold, silver, aluminium, copper, titanium, nickel, the chromium.Adopt ag material in the present embodiment, and H93 gets 300nm, multiple dielectric function dispersion relation is:
E
p=9.5eV, γ=0.04eV.Wherein, ε
AgBe the multiple dielectric function of silver, ε
bBe the electric medium constant part of silver, E
pBe the plasma oscillation energy of the free electron gas of silver, γ is the vibration relaxation time of the free electron gas of silver, and E is electromagnetic oscillation energy.
Use full vector Finite Element Method that emulation has been carried out in present embodiment gain waveguide, calculate 500nm wavelength gain hydridization waveguide mode characteristic.
Shown in Figure 10 when being 500nm for the electromagnetic wavelength of propagating in the gain waveguide, the plasmon pattern of a kind of plasmon gain waveguide embodiment two provided by the invention under different separation layer thickness along with the change curve of wedge shape height.Visible by Figure 10, the effective refractive index of the plasmon hydridization pattern of said plasmon gain waveguide 903 reduces along with the increase of Δ 9, and whole size reduces along with the increase of the H92 of low-refraction.
Shown in Figure 11 when being 500nm for the electromagnetic wavelength of propagating in the gain waveguide, the transmission range of the plasmon pattern of a kind of plasmon gain waveguide embodiment two provided by the invention under different separation layer thickness along with the change curve of wedge shape height.Visible by Figure 11, the transmission range of the plasmon hydridization pattern of said plasmon gain waveguide 903 increases along with the increase of Δ 9.And whole propagation distance is isolated the increase of thickness along with low refraction and is increased.Therefore can increase propagation distance through the height that changes wedge shape, and needn't change the thickness of the separation layer 904 of low-refraction.As when H92 is 5nm, Δ 9 is 25nm for the propagation distance of 70nm and H92, and the propagation distance when Δ 9 is 0nm is suitable.
Shown in Figure 12 when being 500nm for the electromagnetic wavelength of propagating in the gain waveguide, the effective die face of normalization of the plasmon pattern of a kind of plasmon gain waveguide embodiment two provided by the invention is amassed under different separation layer thickness the change curve along with the wedge shape height.Visible by Figure 12, effective die face of the plasmon hydridization pattern of said plasmon gain waveguide 903 is amassed when separation layer 904 layer thicknesses are respectively 5nm and 10nm and is increased along with the increase of Δ 9.Increase along with the increase of the low H92 that reflects and the entire effective die face is long-pending.It is long-pending that but the existence that can see wedge shape can reduce effective die face significantly.As when H92 is 5nm, Δ 9 is 25nm for the propagation distance of 70nm and H92, and the propagation distance when Δ 9 is 0nm is suitable.But its effective die face is long-pending much smaller than the latter.The increase of also just saying H92 can effectively improve propagation distance, but the increase that its effective die face is amassed is rapider, and when not changing H92, can effectively slow down long-pending the gathering way of effective die face through the height of regulating wedge shape.
Shown in Figure 13 when being 500nm for the electromagnetic wavelength of propagating in the gain waveguide, the plasmon pattern of a kind of plasmon gain waveguide embodiment two provided by the invention is that 5nm wedge shape height is the electromagnetic energy density distribution plan of 70nm time field energy at separation layer thickness.Can be found out that by Figure 13 the gain waveguide 903 of wedge shape with the plasmon on dielectric layer 902 surfaces coupling has taken place, most of Energy Efficient local is at the bottom of gain waveguide 903 wedge shapes and in the separation layer between the dielectric layer 902.
Shown in Figure 14 when being 500nm for the electromagnetic wavelength of propagating in the gain waveguide, the plasmon pattern of a kind of plasmon gain waveguide embodiment two provided by the invention is that 25nm wedge shape height is the electromagnetic energy density distribution plan of 0nm time field energy at separation layer thickness.Can find out by Figure 14; With Figure 13 wedge-shaped waveguide structure-borne distance quite the time, Δ 9 is that the main local of light field energy of gain waveguide 903 of 0nm is in gain waveguide 903, at this moment; A little less than gain waveguide 903 was coupled with the metal plasma excimer, energy local mode area was bigger.
Calculate embodiment two said waveguides in the 500nm wavelength, a kind of H92 is 5nm, and Δ 9 is 70nm; Another kind of H92 is 25nm; Δ 9 is 0nm, under the both of these case hydridization duct propagation distance quite, but before a kind of local pattern area of waveguide of situation much smaller than second kind of situation.First kind of situation pattern area is 0.2 λ
2/ 4, and the pattern area of second kind of situation is 0.9 λ
2/ 4.Therefore than traditional hydridization gain waveguide 903 structures, choose the height of suitable wedge shape, embodiment two said gain waveguides 903 can realize the light field propagation of low-loss and strong local simultaneously, and further reduction gain for threshold value is provided maybe.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (10)
1. plasmon gain waveguide; Comprise basalis, dielectric layer, separation layer and gain waveguide; Said dielectric layer places the exposed surface of basalis, and said separation layer is characterized in that between said dielectric layer and said gain waveguide; Said gain waveguide is wedge shape and most advanced and sophisticated towards said dielectric layer near an end of said dielectric layer, and the refractive index of said gain waveguide is greater than the refractive index of said separation layer.
2. plasmon gain waveguide according to claim 1 is characterized in that, the ratio range of the electromagnetic wavelength of propagating in the distance between the most advanced and sophisticated and said dielectric layer of the tapered end of said gain waveguide and the waveguide is 0.01 to 0.1.
3. plasmon gain waveguide according to claim 1; It is characterized in that; The angular range at the tip of the tapered end of said gain waveguide is 10 ° to 180 °, and the ratio range of the electromagnetic wavelength of propagating in the wedge shape height of the tapered end of said gain waveguide and the waveguide is 0.05 to 1.
4. plasmon gain waveguide according to claim 2 is characterized in that, the ratio of the refractive index of said separation layer and the refractive index of said gain waveguide is less than 0.75.
5. plasmon gain waveguide according to claim 2 is characterized in that, the material of said gain waveguide is organic material or inorganic material; Said organic material is to contain any one of fluorescence molecule organic polymer, macromolecule luminous organic material; Said inorganic material be in cadmium sulfide, zinc paste, gallium nitride, gallium arsenide, the cadmium selenide any one.
6. plasmon gain waveguide according to claim 2 is characterized in that, quantum well structure or the superlattice structure of the structure of said gain waveguide for forming through element doping.
7. plasmon gain waveguide according to claim 2 is characterized in that, said gain waveguide is cylinder away from an end of said dielectric layer, and horizontal section be square, rectangle, triangle, in trapezoidal any one.
8. plasmon gain waveguide according to claim 2; It is characterized in that; The ratio range of the electromagnetic wavelength of propagating in the electromagnetic wave waveguide of propagating in the width of the longitudinal profile of said gain waveguide and the waveguide is 0.1 to 2, and the ratio range of the electromagnetic wavelength of propagating in the electromagnetic wave waveguide of propagating in the height of longitudinal profile and the waveguide is 0.05 to 3.
9. plasmon gain waveguide according to claim 1 is characterized in that, the ratio range of the electromagnetic wavelength of propagating in the electromagnetic wave waveguide of propagating in the thickness of said dielectric layer and the waveguide is 0.1 to 0.5.
10. plasmon gain waveguide according to claim 1 is characterized in that, the material of said dielectric layer is grapheme material or metal material; Said metal material is any one or a few a alloy in gold, silver, aluminium, copper, titanium, nickel, the chromium.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105372756A (en) * | 2015-11-25 | 2016-03-02 | 广西师范大学 | Optical-gain gold nanowire-enhanced surface plasmon transmission device |
| CN106526724A (en) * | 2016-12-28 | 2017-03-22 | 广西师范大学 | SPP propagation device based on cadmium sulfide nanowire and graphene nanobelt |
| CN109901254A (en) * | 2019-04-26 | 2019-06-18 | 电子科技大学中山学院 | Structure for improving coupling strength of surface plasmons on graphene |
| CN113009620A (en) * | 2019-12-18 | 2021-06-22 | 北京交通大学 | Hybrid plasma waveguide based on graphene |
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| CN101882752A (en) * | 2010-06-28 | 2010-11-10 | 北京航空航天大学 | Surface plasma nanometer laser |
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| CN105372756A (en) * | 2015-11-25 | 2016-03-02 | 广西师范大学 | Optical-gain gold nanowire-enhanced surface plasmon transmission device |
| CN106526724A (en) * | 2016-12-28 | 2017-03-22 | 广西师范大学 | SPP propagation device based on cadmium sulfide nanowire and graphene nanobelt |
| CN109901254A (en) * | 2019-04-26 | 2019-06-18 | 电子科技大学中山学院 | Structure for improving coupling strength of surface plasmons on graphene |
| CN109901254B (en) * | 2019-04-26 | 2022-12-13 | 电子科技大学中山学院 | Structure for improving coupling strength of surface plasmons on graphene |
| CN113009620A (en) * | 2019-12-18 | 2021-06-22 | 北京交通大学 | Hybrid plasma waveguide based on graphene |
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