CN102660027A - Polysiloxane curing agent - Google Patents
Polysiloxane curing agent Download PDFInfo
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- CN102660027A CN102660027A CN2012101344873A CN201210134487A CN102660027A CN 102660027 A CN102660027 A CN 102660027A CN 2012101344873 A CN2012101344873 A CN 2012101344873A CN 201210134487 A CN201210134487 A CN 201210134487A CN 102660027 A CN102660027 A CN 102660027A
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Abstract
The invention relates to a semiconductor packaging adhesive, in particular to a polysiloxane curing agent for the semiconductor packaging adhesive. Each molecule of the polysiloxane curing agent at least contains two hydrogen atoms bonded to silicon and oxysilane of aryl. The curing agent has a structural formula as follows: (R1R4SiO1/2) O . (R12SiO2/2) p . ( R1R4SiO2/2) q . (R3SiO2/2) r . (R3SiO3/2) s, wherein R1 is alkyl, R3 is aryl, R4 is an H atom or alkyl, o + p + q + r + s is equal to 100, o is 1 to 20, p is 10 to 20, q is 0 to 20, r is 0 to 10, and s is 30 to 60. The organic silicone semiconductor packaging adhesive cured by the product provided by the invention has the characteristics of high refractive index, high light transmittance, high physical strength, resistance to yellowing, and resistance to ultraviolet and thermal aging.
Description
Technical field
The present invention relates to a kind of semiconductor packages glue, relate in particular to a kind of semiconductor packages glue and use the ZGK 5 solidifying agent.
Background technology
Traditional semiconductor element is used epoxy encapsulation, but in use xanthochromia can take place, thereby makes the translucidus variation, and epoxy resin is prone to become fragile strength degradation in using repeatedly.For addressing the above problem; Adopt the packaged material as semiconductor element such as modifying epoxy resin by organosilicon compsn, silica gel again; Anti-ultraviolet and heat aging performance have been improved like this; But along with improving constantly of semiconductor element power, organic-silicon-modified epoxy resin encapsulating material still can not satisfy the requirement of semiconductor components and devices, has introduced phenyl in the semiconductor packages collagen material that the present invention relates to and has solved the problems referred to above preferably.For the LED lamp, because the GaN chip has high specific refractory power,, improve as far as possible and get optical efficiency in order effectively to reduce the light loss that interfacial refraction brings, require the specific refractory power of silica gel and lens material high as far as possible.The traditional silica gel or the refractive index of silicone material are merely about 1.41, and the refractive index of desirable packaged material should be as much as possible near the refractive index of GaN.
Summary of the invention
In order to solve above-mentioned technical problem; An object of the present invention is to provide a kind of ZGK 5 solidifying agent, another object of the present invention provides the preparation method of above-mentioned ZGK 5, and this ZGK 5 and a kind of solidifying agent have high refractive index after solidifying; High-transmittance; High physical strength, anti-xanthochromia, the characteristic of anti-ultraviolet and thermal ageing.
In order to realize first above-mentioned purpose, the technical scheme below the present invention has adopted:
The ZGK 5 solidifying agent contains the TMOS of two Wasserstoffatomss that are connected with silicon and aromatic base at least in the per molecule in this ZGK 5 solidifying agent, structural formula is following:
(R
1R
4SiO1/2)o·(R
12SiO2/2)p·(R
1R
4SiO2/2)q·(R
3SiO2/2)r·(R
3SiO3/2)s
R wherein
1Be alkyl, R
3Be aromatic base, R
4Be H atom or alkyl, described o+p+q+r+s=100, o=1 ~ 20, p=10 ~ 20, q=0 ~ 20, r=0 ~ 10, s=30 ~ 60;
As preferably, R
1For methyl, ethyl, propyl group or butyl, be preferably methyl; R
3Be phenyl, tolyl or naphthyl are preferably phenyl; R
4Be H atom or methyl, ethyl, propyl group or butyl.
As preferably, the viscosity of described ZGK 5 solidifying agent is 50 ~ 50000mPa, and the best is 100 ~ 5000mPa.
In order to realize second above-mentioned purpose, the technical scheme below the present invention has adopted:
A kind of preparation method who prepares above-mentioned ZGK 5 solidifying agent, this method comprises the steps:
1) catalyzer, solvent, end-capping reagent, methylsiloxane, methyl hydrogen siloxane, phenyl siloxane are dripped the phenyl trialkoxy silane down while stirring in room temperature or heating, under room temperature or heating, reacted 3 ~ 18 hours after dripping off the phenyl trialkoxy silane;
2) static, divide and remove the upper strata sour water, lower floor's oil phase adds water washing, and oil phase is washed neutrality, again at 140 ~ 160 ℃, takes out low component under the-0.099Mpa, gets the water white transparency product.
As preferably, above-mentioned catalyzer is one or more in hydrochloric acid, sulfuric acid and the trifluoromethayl sulfonic acid.
As preferably, above-mentioned solvent is one or more in toluene, YLENE and the cyclohexane.
As preferably, above-mentioned end-capping reagent is that end-capping reagent is SWS-F 221, tetramethyl disiloxane or dimethyl-tetraphenyl sily oxide.
As preferably, above-mentioned methylsiloxane is one or more in octamethylcyclotetrasiloxane, dimethyldimethoxysil,ne and the dimethyldiethoxysilane.
As preferably, above-mentioned methyl hydrogen siloxane is one or more in tetramethyl-ring tetrasiloxane, methyl hydrogen dimethoxy silane and the methyl hydrogen diethoxy silane.
As preferably, above-mentioned phenyl siloxane is one or more in dimethoxydiphenylsilane, phenylbenzene diethoxy silane, aminomethyl phenyl dimethoxy silane, aminomethyl phenyl diethoxy silane, phenyltrimethoxysila,e and the phenyl triethoxysilane.
ZGK 5 solidifying agent of the present invention (to call ZGK 5 B in the following text) can be used as the solidifying agent of semiconductor packages glue composition.As preferably, the host of semiconductor packages glue composition can be other a kind of ZGK 5 A.ZGK 5 A, ZGK 5 A contains the ZGK 5 of an alkylene that is connected with silicon and aromatic base at least in the per molecule, and structural formula is following:
(R
1R
22SiO1/2)a·(R
12SiO2/2)b·(R
1R
2SiO2/2)c·(R
3SiO2/2)d·(R
3SiO3/2)e
R wherein
1Be alkyl, R
2Be alkylene, R
3Be aromatic base, described a+b+c+d+e=100, a=1 ~ 20, b=10 ~ 20, c=10 ~ 20, d=0 ~ 10, e=30 ~ 60;
By weight, described ZGK 5 A is 30 ~ 70 weight parts, and ZGK 5 B is 30 ~ 70 weight parts.
ZGK 5 A is as host in the semiconductor packages glue composition, and ZGK 5 B is as solidifying agent.A, B mixture also can comprise adhesion promoters to improve adhesiveproperties, and mixture also can add other optional component, like silicon-dioxide, and non-organic filler such as aluminum oxide.The amount of A and B does not have strict the qualification in A, the B mixture, but the amount of B should not be lower than mixture solidified is exceeded, best for A:B be 1:1.
As preferably, above-mentioned semiconductor packages glue composition also comprises one or both among curing catalyst C and the curing inhibitors D, and curing catalyst C is 0.001 ~ 0.003 weight part, and curing inhibitors D is 0.001 ~ 0.003 weight part.Curing catalyst C can be used as the catalyzer that promotes A, B mixture solidified, and curing inhibitors D has been the effect that suppresses A, B mixture solidified.The consumption of curing catalyst C does not have strict the qualification, does not impel mixture solidified to exceed but should not be lower than.
As preferably, above-mentioned curing catalyst C selects the title complex of platinum and organo-siloxane oligopolymer for use.Preferred as again, be 1 ~ 100ppm with respect to the total composition platinum content among the curing catalyst C, the best is 5 ~ 50ppm.
As preferably, above-mentioned curing inhibitors D is the title complex of alkynol or alkynol and organo-siloxane oligopolymer.
As preferably, the viscosity of above-mentioned ZGK 5 B is 50 ~ 50000mPa, and the best is 100 ~ 5000mPa.
As preferably, the total group of fragrant fiduciary point that is connected with silicon among above-mentioned ZGK 5 A and the ZGK 5 B is no less than 40mol%, and the best is no less than 45mol%.
As preferably, above-mentioned semiconductor packages glue composition can also add non-organic filler, like silicon-dioxide or aluminum oxide etc.
Adopt the compsn of ZGK 5 B of the present invention generally under heating, to solidify, Heating temperature is at 50 ℃ ~ 200 ℃, and the best is 100 ℃ ~ 180 ℃.The refractive index that semiconductor packages glue composition of the present invention solidifies back 25 ℃ of visible lights is not less than 1.5, and light permeable rate is not less than 90%, has high refractive index, high-transmittance, high physical strength, anti-xanthochromia, the characteristics of anti-ultraviolet and thermal ageing.
Embodiment
One, the preparation of ZGK 5 A
The general structure that the present invention relates to ZGK 5 A is:
R wherein
1Be alkyl, like methyl, ethyl, propyl group, butyl etc., preferable methyl; R
2Be alkyl or alkenyl, like methyl, vinyl, allyl group, crotonyl etc., preferred vinyl; R
3Be aryl, like phenyl, tolyl, naphthyl etc., preferred phenyl.a+b+c+d+e=100，a=1~20，b=0~20，c=0~20，d=0~20,e=30~60。
The preparation method who the present invention relates to ZGK 5 A is: catalyzer, solvent, end-capping reagent, methylsiloxane, ethylene methacrylic radical siloxane, phenyl siloxane dripped the phenyl trialkoxy silane down while stirring in room temperature or heating, under room temperature or heating, reacted 3 ~ 18 hours after dripping off the phenyl trialkoxy silane, and static; Divide and remove the upper strata sour water; Lower floor's oil phase adds water washing, and oil phase is washed neutrality, again at 150 ℃; Take out low component under the-0.099Mpa, get the water white transparency product A.
Described catalyzer is one or more in hydrochloric acid, sulfuric acid and the trifluoromethayl sulfonic acid.
Described solvent is one or more in toluene, YLENE and the cyclohexane.
Described end-capping reagent is one or more in SWS-F 221, tetramethyl divinyl disiloxane and the tetraphenyl dimethyl-sily oxide.
Described methylsiloxane is one or more in octamethylcyclotetrasiloxane, dimethyldimethoxysil,ne and the dimethyldiethoxysilane.
Described ethylene methacrylic radical siloxane is one or more in tetramethyl-tetrem thiazolinyl cyclotetrasiloxane, methyl ethylene dimethoxy silane and the methyl ethylene diethoxy silane.
Described phenyl siloxane is one or more in dimethoxydiphenylsilane, phenylbenzene diethoxy silane, aminomethyl phenyl dimethoxy silane, aminomethyl phenyl diethoxy silane, phenyltrimethoxysila,e and the phenyl triethoxysilane.
Embodiment 1
Sulfuric acid, 54g toluene, 40g SWS-F 221,22g octamethylcyclotetrasiloxane and the 26g tetramethyl-tetrem thiazolinyl cyclotetrasiloxane of 20g 30% are dropped in the four-hole bottle, open stirring, slowly drip phenyltrimethoxysila,e; At room temperature react 18 hours after dripping off the 178g phenyltrimethoxysila,e, static, divide and remove the upper strata sour water; Lower floor's oil phase adds water washing, and oil phase is washed neutrality, again at 150 ℃; Take out low fraction under the-0.099Mpa, get water white transparency product A 1.
Embodiment 2
Sulfuric acid, 107g toluene, 30g SWS-F 221,88g dimethyldimethoxysil,ne and the 49g tetramethyl-tetrem thiazolinyl cyclotetrasiloxane of 25g 30% are dropped in the four-hole bottle, load onto return line, open stirring; The beginning slowly drip phenyltrimethoxysila,e, drip off the 400g phenyltrimethoxysila,e after, at room temperature stir 16 hours after; Static, divide and remove the upper strata sour water, lower floor's oil phase adds water washing; Oil phase is washed neutrality; At 150 ℃, take out low fraction under the-0.099Mpa again, get water white transparency product A 2.
Embodiment 3
The sulfuric acid of 20g 30%, 66g toluene, 37g tetramethyl divinyl disiloxane, 37g octamethylcyclotetrasiloxane and 218g phenyltrimethoxysila,e are dropped in the four-hole bottle, open stirring, at room temperature stir 16 hours after; Static, behind the branch disacidify water, use water washing; To oil phase is neutral, divides to anhydrate mutually that the back steams toluene and water at 150 ℃, again at-0.099Mpa; Set aside low component, get water white transparency product A 3 for 150 ℃.
Embodiment 4
Sulfuric acid, 60g toluene, 20g tetramethyl divinyl disiloxane, 39g octamethylcyclotetrasiloxane, 54g tetramethyl-tetrem thiazolinyl cyclotetrasiloxane and the 180g dimethoxydiphenylsilane of 25g 30% are dropped in the four-hole bottle, open stirring, at room temperature reacted 18 hours; Static, divide and remove the upper strata sour water, lower floor's oil phase adds water washing; Oil phase is washed neutrality; At 150 ℃, take out low fraction under the-0.099Mpa again, get water white transparency product A 4.
Two, the preparation of ZGK 5 B
The general structure that the present invention relates to ZGK 5 B is:
R wherein
1Be alkyl, like methyl, ethyl, propyl group, butyl etc.; R
3Be aryl, like phenyl, tolyl, naphthyl etc.; R
4Be H atom or methyl, ethyl, propyl group, butyl etc., o+p+q+r+s=100, o=1 ~ 20, p=0 ~ 20, q=0 ~ 20, r=0 ~ 10, s=30 ~ 60.
The preparation method of ZGK 5 B is: catalyzer, solvent, end-capping reagent, methylsiloxane, methyl hydrogen siloxane, phenyl siloxane dripped the phenyl trialkoxy silane down while stirring in room temperature or heating, under room temperature or heating, reacted 3 ~ 18 hours after dripping off the phenyl trialkoxy silane, and static; Divide and remove the upper strata sour water; Lower floor's oil phase adds water washing, and oil phase is washed neutrality, again at 150 ℃; Take out low component under the-0.099Mpa, get the water white transparency product B.
Catalyzer is hydrochloric acid, sulfuric acid, trifluoromethayl sulfonic acid etc. among the preparation method.
Solvent is toluene, YLENE, cyclohexane etc.
End-capping reagent is SWS-F 221, tetramethyl disiloxane or dimethyl-tetraphenyl sily oxide.
Methylsiloxane is octamethylcyclotetrasiloxane, dimethyldimethoxysil,ne, dimethyldiethoxysilane etc.
Methyl hydrogen siloxane is tetramethyl-ring tetrasiloxane, methyl hydrogen dimethoxy silane, methyl hydrogen diethoxy silane etc.
Phenyl siloxane is dimethoxydiphenylsilane, phenylbenzene diethoxy silane, aminomethyl phenyl dimethoxy silane, aminomethyl phenyl diethoxy silane, phenyltrimethoxysila,e, phenyl triethoxysilane etc.
Embodiment 5
Sulfuric acid, 53g toluene, 40g SWS-F 221,18g tetramethyl-ring tetrasiloxane, 26g tetramethyl-tetrem thiazolinyl cyclotetrasiloxane and the 18g phenyltrimethoxysila,e of 20g 30% are dropped in the four-hole bottle, load onto return line, open stirring; Be warmed up to 60 ℃ of beginnings and slowly drip phenyltrimethoxysila,e, drip off after the 178g phenyltrimethoxysila,e 70 ~ 75 ℃ of refluxed reactions 8 hours, static; Divide and remove the upper strata sour water; Lower floor's oil phase adds water washing, and oil phase is washed neutrality, again at 150 ℃; Take out low fraction under the-0.099Mpa, get water white transparency product B 5.
Embodiment 6
The sulfuric acid of 25g30%, 104g toluene, 16g SWS-F 221,30g octamethylcyclotetrasiloxane, 18g tetramethyl-ring tetrasiloxane, 218g phenyltrimethoxysila,e are dropped in the four-hole bottle, open stirring, at room temperature stir 16 hours after; Static, divide and remove the upper strata sour water, lower floor's oil phase adds water washing; Oil phase is washed neutrality; At 150 ℃, take out low fraction under the-0.099Mpa again, get water white transparency product B 6.
Embodiment 7
The sulfuric acid of 30g30%, 54g tetramethyl disiloxane, 144g tetramethyl-ring tetrasiloxane, 195g dimethoxydiphenylsilane and 80g toluene are dropped in the four-hole bottle, open stirring, at room temperature stir 16 hours after; Static, behind the branch disacidify water, lower floor's oil phase adds water washing; Oil phase is washed neutrality; At 150 ℃, take out low fraction under the-0.099Mpa again, get water white transparency product B 7.
Three, the preparation of semiconductor packages glue
Host is ZGK 5 A, and solidifying agent is ZGK 5 B, and accelerant C is that curing catalyst C selects the title complex of platinum and organo-siloxane oligopolymer for use, like platinum one vinylsiloxane as the catalyzer that promotes A, B mixture solidified; Curing inhibitors D has been the effect that suppresses A, B mixture solidified, and curing inhibitors D is the title complex of alkynol or alkynol and organo-siloxane oligopolymer.In addition, A, B mixture also can comprise adhesion promoters to improve adhesiveproperties, and mixture also can add other optional component, like silicon-dioxide, and non-organic filler such as aluminum oxide.
Get product A and add curing catalyst C respectively and stir, component P.Get product B and add respectively or do not add and solidify suppressor factor D and stir, component Q.After component P and component Q mix by 1:1, under vacuum, get semiconductor packages glue behind row's bubble.
| Index | The packaging plastic I | The packaging plastic II |
| 25 ℃ of cp of viscosity | 5882 | 2361 |
| Specific refractory power, 25 ℃ | 1.5206 | 1.5210 |
| Solidify 150 ℃ of back hardness, 3h | D50 | D68 |
| Cured strength MPa | 4.5MPa | 1.3MPa |
| Solidify back transparency 400nm | 95.7% | 94.3% |
Claims (10)
1. ZGK 5 solidifying agent, it is characterized in that: contain the TMOS of two Wasserstoffatomss that are connected with silicon and aromatic base in this ZGK 5 solidifying agent in the per molecule at least, structural formula is following:
(R
1R
4SiO1/2)o·(R
12SiO2/2)p·(R
1R
4SiO2/2)q·(R
3SiO2/2)r·(R
3SiO3/2)s
R wherein
1Be alkyl, R
3Be aromatic base, R
4Be H atom or alkyl, described o+p+q+r+s=100, o=1 ~ 20, p=10 ~ 20, q=0 ~ 20, r=0 ~ 10, s=30 ~ 60.
2. ZGK 5 solidifying agent according to claim 1 is characterized in that: R
1For methyl, ethyl, propyl group or butyl, be preferably methyl; R
3Be phenyl, tolyl or naphthyl are preferably phenyl; R
4Be H atom or methyl, ethyl, propyl group or butyl.
3. ZGK 5 solidifying agent according to claim 1 is characterized in that: the viscosity of described ZGK 5 solidifying agent is 50 ~ 50000mPa, and the best is 100 ~ 5000mPa.
4. a preparation method who prepares claim 1 or 2 or 3 described ZGK 5 solidifying agent is characterized in that this method comprises the steps:
1) catalyzer, solvent, end-capping reagent, methylsiloxane, methyl hydrogen siloxane, phenyl siloxane are dripped the phenyl trialkoxy silane down while stirring in room temperature or heating, under room temperature or heating, reacted 3 ~ 18 hours after dripping off the phenyl trialkoxy silane;
2) static, divide and remove the upper strata sour water, lower floor's oil phase adds water washing, and oil phase is washed neutrality, again at 140 ~ 160 ℃, takes out low component under the-0.099Mpa, gets the water white transparency product.
5. a kind of preparation method who prepares the ZGK 5 solidifying agent according to claim 4 is characterized in that: catalyzer is one or more in hydrochloric acid, sulfuric acid and the trifluoromethayl sulfonic acid.
6. a kind of preparation method who prepares the ZGK 5 solidifying agent according to claim 4 is characterized in that: solvent is one or more in toluene, YLENE and the cyclohexane.
7. a kind of preparation method who prepares the ZGK 5 solidifying agent according to claim 4 is characterized in that: end-capping reagent is SWS-F 221, tetramethyl disiloxane or dimethyl-tetraphenyl sily oxide.
8. a kind of preparation method who prepares the ZGK 5 solidifying agent according to claim 4 is characterized in that: methylsiloxane is one or more in octamethylcyclotetrasiloxane, dimethyldimethoxysil,ne and the dimethyldiethoxysilane.
9. a kind of preparation method who prepares the ZGK 5 solidifying agent according to claim 4 is characterized in that: methyl hydrogen siloxane is one or more in tetramethyl-ring tetrasiloxane, methyl hydrogen dimethoxy silane and the methyl hydrogen diethoxy silane.
10. a kind of preparation method who prepares the ZGK 5 solidifying agent according to claim 4 is characterized in that: phenyl siloxane is one or more in dimethoxydiphenylsilane, phenylbenzene diethoxy silane, aminomethyl phenyl dimethoxy silane, aminomethyl phenyl diethoxy silane, phenyltrimethoxysila,e and the phenyl triethoxysilane.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210134487.3A CN102660027B (en) | 2012-05-04 | 2012-05-04 | Polysiloxane curing agent |
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|---|---|---|---|
| CN201210134487.3A CN102660027B (en) | 2012-05-04 | 2012-05-04 | Polysiloxane curing agent |
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| CN102660027A true CN102660027A (en) | 2012-09-12 |
| CN102660027B CN102660027B (en) | 2014-09-24 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105567155A (en) * | 2016-03-02 | 2016-05-11 | 广东杰果新材料有限公司 | Preparation method of anti-sulfur chip LED (Light Emitting Diode) packaging adhesive |
| CN109705351A (en) * | 2018-12-28 | 2019-05-03 | 广州市白云化工实业有限公司 | Dendritic polysiloxanes and preparation method thereof and add-on type liquid organosilicon flat sealant and preparation method thereof |
| CN112358847A (en) * | 2020-10-31 | 2021-02-12 | 武汉双键开姆密封材料有限公司 | UV (ultraviolet) illumination-resistant organopolysiloxane composition |
| CN115353857A (en) * | 2022-07-11 | 2022-11-18 | 武汉飞恩微电子有限公司 | Packaging medium for pressure sensor chip and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102432883A (en) * | 2011-09-09 | 2012-05-02 | 汕头市骏码凯撒有限公司 | Preparation method of phenyl-vinyl silicon oil |
-
2012
- 2012-05-04 CN CN201210134487.3A patent/CN102660027B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102432883A (en) * | 2011-09-09 | 2012-05-02 | 汕头市骏码凯撒有限公司 | Preparation method of phenyl-vinyl silicon oil |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105567155A (en) * | 2016-03-02 | 2016-05-11 | 广东杰果新材料有限公司 | Preparation method of anti-sulfur chip LED (Light Emitting Diode) packaging adhesive |
| CN105567155B (en) * | 2016-03-02 | 2018-12-07 | 广东杰果新材料有限公司 | The preparation method of sulfuration resistant paster LED packaging plastic |
| CN109705351A (en) * | 2018-12-28 | 2019-05-03 | 广州市白云化工实业有限公司 | Dendritic polysiloxanes and preparation method thereof and add-on type liquid organosilicon flat sealant and preparation method thereof |
| CN109705351B (en) * | 2018-12-28 | 2022-04-05 | 广州市白云化工实业有限公司 | Dendritic polysiloxane and preparation method thereof, addition type liquid organosilicon plane sealant and preparation method thereof |
| CN112358847A (en) * | 2020-10-31 | 2021-02-12 | 武汉双键开姆密封材料有限公司 | UV (ultraviolet) illumination-resistant organopolysiloxane composition |
| CN115353857A (en) * | 2022-07-11 | 2022-11-18 | 武汉飞恩微电子有限公司 | Packaging medium for pressure sensor chip and preparation method thereof |
| CN115353857B (en) * | 2022-07-11 | 2023-06-27 | 武汉飞恩微电子有限公司 | Packaging medium for pressure sensor chip and preparation method thereof |
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