CN102659320B - The parts of plasma processing device and in plasma processing device the method for etching semiconductor substrate - Google Patents
The parts of plasma processing device and in plasma processing device the method for etching semiconductor substrate Download PDFInfo
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- CN102659320B CN102659320B CN201210083136.4A CN201210083136A CN102659320B CN 102659320 B CN102659320 B CN 102659320B CN 201210083136 A CN201210083136 A CN 201210083136A CN 102659320 B CN102659320 B CN 102659320B
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- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
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- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 7
- BDAGIHXWWSANSR-UHFFFAOYSA-N formic acid Chemical compound OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 7
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
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Abstract
The method providing Surface Finishing plasma processing device parts.Described parts include at least one surface being exposed in plasma.Described method includes the surface that mechanical polishing, chemical etching and cleaning are exposed in plasma, in order to the configuration of surface desired by acquisition.The quartz glass sealing surface of parts also can be with described method polish.Surface and the sealing surfaces that can same parts be exposed in plasma are finish-machined to configuration of surface different from each other.
Description
The application is the divisional application of the Chinese invention patent application of Application No. 200480017391.2, invention entitled " parts that the method for finished quartz glass surfaces and described method produce ".
Technical field and background technology
Plasma processing device is used for carrying out various technique, prepares the plasma etching of base material, physical vapour deposition (PVD), chemical gaseous phase deposition (CVD), ion implanting and protective layer removal etc. including by quasiconductor, dielectric substance and metal material.
Plasma processing device includes the various parts being exposed in plasma environment.In view of hope improves process yield, the parts being exposed in plasma are needed to have the particle contamination of reduction in such plasma environment.
Summary of the invention
The method providing finished quartz glass surfaces.These methods can get such quartz glass surface finishes, so that can reduce quartz and the incidence rate of metal particulate and molecular metal contamination when for plasma processing device.Also provide for the parts with such finished quartz glass surfaces.
One preferred embodiment of the parts surface method for fine finishing comprising at least one Quartz glass surfaces includes, mechanically polish at least one Quartz glass surfaces of these parts, the chemical etching Quartz glass surfaces through mechanically polishing, and clean etched Quartz glass surfaces to remove metal pollutant from described surface.
At least one Quartz glass surfaces being exposed in plasma is comprised with the parts of the preferred embodiment polish of described method.Described parts also can comprise at least one Quartz glass surfaces being not exposed in plasma, such as vacuum seal surface.The surface being exposed in plasma of parts can be finish-machined to the configuration of surface different from the surface being not exposed in plasma.The parts of polish can be used for plasma processing device, to reduce the pollution of base material.
Parts surface method for finishing manufactured preferably obtains low-level metallic pollution degree on Quartz glass surfaces.Preferably, described parts are when plasma processing device, and they can provide metal particulate and the molecular metal contamination of low base material.
The preferred embodiment of described method can be used for being exposed in plasma processing device in plasma before polish or before the parts that are not exposed in plasma.
Additionally providing the preferred embodiment of the method for etching semiconductor substrate in the plasma chamber of plasma processing device, described equipment includes the parts of one or more polish the most.
Accompanying drawing explanation
Fig. 1 is the SEM micrograph (1000 times) of the Quartz glass surfaces of slurry polishing.
The SEM micrograph (1000 times) of that Fig. 2 is slurry polishing and that plasma adjusts Quartz glass surfaces.
Fig. 3 is the flow chart of the first preferred embodiment of quartz glass fine-processing technique.
Fig. 4 is the SEM micrograph (1000 times) of the Quartz glass surfaces of the preferred embodiment process of quartz glass fine-processing technique.
Fig. 5 represents that the quartz window (" ◆ ") of the quartz window (" ") by preferred embodiment processing and slurry polishing is added to the relation between the particulate matter number in silicon wafer in plasma etch process.
Fig. 6 represent be not exposed in plasma slurry polishing quartz glass parts (" A "), be exposed in plasma slurry polishing quartz glass parts (" B ") and by preferred embodiment processing quartz glass parts (" C ") go up different metal number, atom/centimetre2。
Fig. 7 represents the flow chart of the second preferred embodiment of quartz glass finishing passes.
Fig. 8 represents the sealing surfaces that the slurry of quartz glass parts grinds.
Fig. 9 represents the dielectric window comprising the surface with sealing being exposed in plasma that this quartz glass finishing method available processes.
Figure 10 is the magnified partial view of the dielectric window shown in Fig. 9.
Figure 11 represents the air injector comprising the surface with sealing being exposed in plasma that this quartz glass finishing method available processes.
Detailed description of the invention
In various the materials such as processing in plasma processing device of semi-conducting material, dielectric material and metal, particulates' properties is a worth concern.The particulate pollutant being attached in plasma reactor on the base material of processing can make the productivity of product decline.In plasma reactor, a source of particulate pollutant is the parts surface being exposed in plasma.
The parts comprising the surface being exposed in plasma can be prepared by the method including sintering and/or the one or more parts surface of machining.These steps make surface be damaged, and make skin breakage with discontinuous.These rupture the potential source being to produce granule in PLASMA PROCESSING.Slurry polishing can reduce the size of granule；But, it can not eliminate granule.Fig. 1 is scanning electron microscope (SEM) figure on the quartz glass dielectric window surface of slurry polishing.Damage similar to Figure 1 is had with the Quartz glass surfaces of other technology machining.
Also determining that, the parts that quartz glass is made may be installed in plasma reactor, and reaches adjustment before the condition of production semiconductor substrate in plasma reactor, in order to reduces the incidence rate of the Particulate Pollution relevant to quartz of base material.It is in course of adjustment, adjusts wafer and may be installed in plasma reactor.Plasma removes some materials by etching from the parts surface being exposed to plasma.The surface being exposed in plasma preferably has the form reducing quartz and metal particulate.Finally, the sufficient amount of quartz material of removing is processed by adjustment, in order to reach acceptable surface quartz particulate level.Then Fig. 2 for being exposed to the SEM micrograph on the quartz glass dielectric window surface that plasma (50 hours) is adjusted in plasma reactor through slurry polishing.
But, adjustment processes needs loss many production times, it may be necessary to up to 10 days or longer, in order to produce the surface smoothness being suitable for plasma process on the parts surface in being exposed to plasma.Therefore, such adjustment processes needs the plasma reactor substantial amounts of time to stop work, in order to parts reach applicable particulates' properties.Additionally, adjustment processes needs relevant expense, monitor expense and intervention expense etc. including the adjustment expense of wafer, operator.
In addition, need to provide vacuum to seal to prevent from being formed the surface of the quartz glass parts of inlet air flow path in plasma process chamber in plasma reactor, namely sealing surfaces (such as o-ring sealing surfaces) needs such fineness, in order to provide the vacuum leakproofness energy being suitable for.Such sealing surfaces is not the surface being exposed in plasma.But, the fineness of required vacuum seal surface can be significantly different with the required surface being exposed in plasma.It has been determined that there are the parts on the surface being exposed in plasma and vacuum-packed surface preferably to have visibly different surface smoothness on the diverse location of same parts.
Fig. 3 represents the flow chart of the first preferred embodiment of Quartz glass surfaces method for fine finishing.Described method can be implemented, with one or more Quartz glass surfaces being applicable to plasma processing device of polish parts.The surface of one or more polish preferably includes at least one surface being exposed in plasma when these parts are arranged in plasma reactor.Parts can be the air injector of plasma reactor, dielectric window, electrode, observation port, side ring, focusing ring, restriction ring etc..
The preferred embodiment of finished quartz glass method can be used for the Quartz glass surfaces of parts that finished quartz glass prepares, and comprises the Quartz glass surfaces (such as coating) of the parts of material in addition to quartz glass.
Described method preferably includes mechanical polishing, chemical etching and cleaning step, in order to produce desired surface smoothness on parts.The parts of available described method processing can have variously-shaped, such as plate shape, dish type, annular (such as dielectric window, observation port, side ring etc.) and cylinder, and has the surface that difformity combines.Parts can have various sizes.
The natural quartz that quartz glass parts is preferably melted by flame is made.The natural quartz that flame melts is generally can be processed into crystal block (boules) the form existence of desirable shape and size.Quartz glass is such as alternatively natural quartz or the synthetic quartz of electric arc melting.
Before carrying out polish process, the bulk purity level of any metal of silica glass material is preferably less than about 10ppm.This metal purity in quartz glass can provide the metal level from block that specific surface metal level is much lower.The metal impurity level reduced in silica glass material makes the incidence rate of defect on granule and/or the base material relevant with metal decline.
The quartz glass parts of the preferred embodiment polish of available described method can be at machining and/or the state sintered.Such as, plate shape quartz glass parts can cut from crystal block, and is machined into shape desired.Available any applicable method such as corundum grinding etc. by machining and/or the parts of sintering be machined into desired structure and surface condition.
Quartz glass parts is preferably mechanically polished to desired surface smoothness.Mechanical polishing preferably includes one or more surface size of parts are polished to desired surface smoothness.Described slurry can such as include aluminium oxide, carborundum, diamond, cerium oxide, zirconium oxide etc. containing the grinding-material being suitable for.Grinding-material preferably has such granularity, in order to produce desired surface finish level on the slurry-polished surface of parts.
The mechanical polishing of quartz glass parts preferably can obtain identical surface smoothness in the different surfaces position of parts, or on the other hand can obtain different surface smoothnesses.Such as, one or more surfaces being exposed in plasma of parts can mechanically polish the surface smoothness different from the one or more surfaces (such as sealing surfaces) being not exposed in plasma.
Before chemical etching, mechanical polishing preferably reaches desired quartz glass surface morphology, in order to etching acquisition is similar to the configuration of surface on the surface being exposed in plasma.Such as, etched surface preferably has identical effective surface area, and there is no damage and do not rupture.The configuration of surface of mechanical polishing such as can use arithmetic average roughness RaCome quantitatively.In a preferred embodiment, the R on surface is mechanically polishedaIt is preferably from about 5-30 microinch (about 0.125-0.75 micron), more preferably from about 12-20 microinch (about 0.3-0.5 micron).For certain parts, different surfaces can be mechanically polished different fineness.Such as, the surface being exposed in plasma can mechanically polish the R lower than the surface being not exposed in plasmaaValue (the most smoother fineness), for the latter, in PLASMA PROCESSING, the removing of particulate matter less receives publicity.
Machining and mechanical polishing step can produce the surface of desmorrhexis, and it is to produce silica glass particle thing and/or the source of metal particulate on the parts surface of machining and/or mechanical polishing.The granule of attachment can be base material PLASMA PROCESSING in the source of particle contamination.Therefore, utilizing present in plasma reactor before component processing base material, it is desirable to the number of attaching particles is reduced to the low number being suitable for.As above-mentioned, the granule of attachment can remove from plasma reactor parts with plasma conditioning techniques；But, these technology are not entirely satisfactory.
Therefore, etch step preferably removes quartz glass and the metal contaminant particles of attachment from treated component surface, and preferably obtains the configuration of surface on the similar surface being exposed in plasma.Etch step is preferably used fluorine-containing etching liquid effective to etch quartz glass.Such as, fluorine-containing etching liquid can be hydrofluoric acid containing (HF), ammonium fluoride (NH3HF), fluoram (NH4Or the etching solution of its mixture FHF).Etching liquid also can contain additive, such as nitric acid (HNO3) or other acid.Can other parameter of the so concentration of selective etching liquid, temperature and pH value, etch period and etching liquid and etching technics, in order to obtain and remove the clearance desired by surfacing from parts and remove the degree of depth.
The R of such as usable surfaceaValue characterizes the configuration of surface of etching surface.On one or more selected surfaces of parts, the R that etch step obtainsaValue is preferably from about 1-100 microinch (about 0.025-2.5 micron).As described below, for certain parts surface, desired RaValue can change with the type (surface being such as exposed in plasma and the surface being not exposed in plasma) of the type of parts and polished surface.
Changed the configuration of surface of parts by etching, change the actual surface area of parts.The nominal surface area of parts is determined by its physical size.The actual surface area of parts also should additionally consider surface roughness.Surface roughness improves makes the actual surface area of parts increase.Chemical etch step preferably obtains such parts actual surface area/nominal surface area ratio, the ratio that this ratio can have close to the parts being exposed to plasma (or plasma adjust).Parts actual surface area/nominal surface area that chemical etch step preferably obtains is than about 1.1-4, more preferably from about 1.2-1.5.
The characteristic length of the configuration of surface of the parts that etch step obtains also usable surface form characterizes, and it provides measuring of the spatial frequency of surface roughness.The characteristic length of parts etching surface is preferably from about 1-50 micron.For certain surface, it is desirable to characteristic length can with the type of polish parts and surface type (surface being such as exposed in plasma and the surface being not exposed in plasma) change.
Cleaning step is from the surface from metal pollutant of the quartz glass parts of etching.Cleaning step includes contacting quartz glass parts with the liquid to metal (if present) with applicable high-dissolvability, preferably removes this metal from parts by cleaning.Such metal includes but not limited to Al, B, Ca, Cr, Cu, Fe, Li, Mg, Ni, K, Na, Ti and/or Zn.Can be used for cleaning quartz glass so that the applicable solvent removing these metals includes but not limited to nitric acid (HNO3), Fluohydric acid. (HF), phosphoric acid (H3PO4), oxalic acid (COOH)2, formic acid (HCOOH), hydrogen peroxide (H2O2), hydrochloric acid (HCl), acetic acid (CH3COOH), citric acid (C6H6O7) and mixture.
In addition, in order to reach the clean level of desired quartz glass parts, carefully parts process, the use (such as contain the solvent of less than about 10ppb metal impurities) of ultrapure solvent and environmental Kuznets Curves such as use 100 classes to clean rooms and be dried and packaging is preferred.
Cleaning step make quartz glass parts, desired low-level is reduced to for the level of one or more surface metal contaminants in Al, B, Ca, Cr, Cu, Fe, Li, Mg, Ni, K, Na, Ti and Zn, it is preferably less than about 1000 × 1010Atom/centimetre2, more preferably less than about 100 × 1010Atom/centimetre2, most preferably less than about 10 × 1010Atom/centimetre2。
Fig. 4 is the SEM micrograph on the quartz glass dielectric window surface processed according to a preferred embodiment mechanical polishing, etching and cleaning step.
Fig. 5 represents that the quartz window (" ◆ ") with slurry polishing is compared, according to the result of the test of the particulate pollutant level (joining the size number more than the granule of 0.16 μm of silicon wafer in plasma etch process) of the quartz window (" ") of a preferred embodiment process.In curve, zero corresponds to window installation in plasma reactor in RF hour.Curve shows during whole test, and the numbers of particles added with the quartz window of preferred embodiment polish is more much lower than the numbers of particles that the quartz window that slurry polishes adds.In about the first two RF hour, slurry most of granules that the quartz window polished adds are quartz particles.Although can be reduced the numbers of particles that the quartz window polished by slurry adds by plasma exposure, but during testing, the number of these granules is not reaching to the lower numbers of particles added with the quartz window of preferred embodiment polish.
Therefore, experiment results proved shown in Fig. 5, polish processes can produce the parts for plasma processing device, and the feature of the polished surface of described parts is compared with the quartz window of slurry polishing, has much lower granule to add number when for plasma environment.In addition, result of the test shows, for the parts processed according to the preferred embodiment of described method, in order to reach the particle level (such as adding about 10 particulate matters more than 0.16 micron) of stable state, may only need short RF process (e.g., from about 1/2 hour).Therefore, by using the parts of the preferred embodiment polish of described method, the equipment relevant with plasma adjustment is stopped work and expense can obviously reduce.
Fig. 6 represents the quartz glass parts (" A ") of the slurry polishing being not exposed in plasma, the quartz glass parts (" B ") polished through the slurry of plasma exposure and the result of the test of number according to Al, B, Ca, Cr, Cu, Fe, Li, Mg, Ni, K, Na, Ti and Zn present on the quartz glass parts (" C ") of preferred embodiment processing respectively, atom/centimetre2.Compared with the quartz glass parts of the quartz glass parts of slurry polishing and the also plasma exposure of slurry polishing, process according to the polish of preferred embodiment and significantly reduce every kind of metallic surface metal contaminant levels.Metal pollutant is undesirable, because it can produce defect in the integrated circuit of processing in the plasma reactor chamber including contaminated quartz glass, or as being deposited on the granule of wafer surface, or be diffused in wafer as molecular contaminants and introduce undesirable impurity, this has harmful effect to dopant profiles and wafer property.Therefore, the preferred embodiment of the described method processing quartz glass can reduce this problem.
According to a preferred embodiment, polish process can be carried out, the parts (namely " used parts ") being exposed in plasma reactor chamber in plasma in the past are adjusted again, process the obtainable surface metal levels being on close level to obtain with new parts polish, new parts namely with polish process but not for the parts of plasma reactor chamber in PLASMA PROCESSING.In such embodiments, the most only parts are carried out step.
Fig. 7 represents the step of the second preferred embodiment of Quartz glass surfaces method for fine finishing.Described method can be carried out so that polish is for one or more Quartz glass surfaces being exposed in plasma of the quartz glass parts of plasma reactor and one or more quartz glass vacuum sealing surfaces.The parts can with surface and the vacuum seal surface being exposed in plasma such as include the air injector of plasma reactor, observation port and dielectric window.
As shown in Figure 7, as in above-mentioned first preferred embodiment, the second preferred embodiment includes the one or more surfaces mechanically polishing quartz glass parts.
In the second preferred embodiment, one or more quartz glass sealing surface are finish-machined to desired fineness.Fig. 8 represents an exemplary finish on the surface formed on the quartz glass parts with mechanical polishing (such as slurry grinding).Mechanical polishing process produces the sealing surfaces with concentric circular grooves pattern.Concentric grooves reduces and preferably stops air flow channel, in the vacuum desired by sealing surfaces maintenance.
According to the second preferred embodiment, the sealing surfaces of one or more mechanical polishinges of quartz glass parts is covered before etch step, to prevent sealing surfaces to be also etched.Therefore, so perform etching step, make the parts surface in addition to sealing surfaces etch.The sealing surfaces of quartz glass parts can such as not have the adhesive tape of pollutant and/or wax to hide by any applicable cover material.
In the second preferred embodiment, after etch step, from sealing surfaces, remove overcover and by element purge, as described in the first preferred embodiment.Cleaning step removes metal pollutant on the surface of the etched quartz glass component including sealing surfaces and unsealed surface (being such as exposed to the surface plasma).
Fig. 9 and 10 represents an exemplary dielectric window 20, and it includes parallel plane 22, side 24 and passage 26.Figure 10 is the enlarged drawing of passage 26, represents vacuum seal surface 28 and the plane 22 being exposed in plasma.Vacuum seal surface 28 can be such as o-ring sealing surfaces.Dielectric window 20 can have more than one sealing surfaces.The dielectric window being made up of quartz glass, such as dielectric window 20 may be used to lower preferred step polish.
Plane (the such as plane 22) machining that dielectric window 20 is exposed in plasma and mechanical polishing.R through the surface being exposed in plasma of mechanical polishingaValue is preferably from about 5-20 microinch (0.125-0.5 micron), more preferably from about 12-20 microinch (0.3-0.5 micron).Sealing surfaces 28 is hidden.
The surface being exposed in plasma with fluorine-containing etching liquid wet etching, in order to reach required configuration of surface.Such as, for the surface being exposed in plasma, HF etching solution can be used to obtain about 20-100 microinch (about 0.5-2.5 micron), the R of more preferably from about 30-50 microinch (about 0.75-1.25 micron)aValue.The actual surface area on the etched surface being exposed in plasma and nominal surface area preferably than about 1.1-4, more preferably from about 1.2-1.5.The characteristic length of the configuration of surface on the surface being exposed in plasma is preferably from about 2-30 micron, more preferably from about 5-20 micron.Such as, the average feature length on the surface being exposed in plasma is about 10 microns.
The polished preferred R to about 10-20 microinch (0.25-0.5 micron) of sealing surfaces 28 not etchedaValue.The surface area of sealing surfaces is not of interest, because it is not the surface being exposed in plasma.The characteristic length of sealing surfaces is preferably from about 5-25 micron.
The overcover that removes from sealing surfaces 28 also cleans dielectric window 20, in order to remove metal pollutant on the surface being exposed to plasma and other surface.Cleaning step makes the level of one or more metals in Al, B, Ca, Cr, Cu, Fe, Li, Mg, Ni, K, Na, Ti and Zn of the surface to be cleaned of dielectric window decline, and preferably drops to less than about 1000 × 1010Atom/centimetre2, more preferably less than about 100 × 1010Atom/centimetre2, most preferably less than about 10 × 1010Atom/centimetre2。
As another embodiment, Figure 11 represents the air injector 40 on surface 46 comprising vacuum seal surface 42,44 and being exposed in plasma.Air injector 40 also comprises the inner surface being exposed in plasma, such as endoporus (not shown).Such as, vacuum seal surface 42,44 can be o-ring sealing surfaces.Air injector can include other sealing surfaces (not shown).The air injector that quartz glass is made such as air injector 40 may be used to lower preferred steps polish.
Surface 46 machining being exposed in plasma mechanical polishing are made RaValue is about 7-20 microinch (0.025-0.5 micron), more preferably from about 7-12 microinch (0.075-0.3 micron).The surface 46 that air injector 40 is exposed in plasma is sufficiently small, so that its plasma chemical property the most significantly affects.Therefore, the surface 46 being exposed in plasma is the most smooth, in order to remove impaired surfacing during etch step under desired low HF concentration and etch period.
The surface being exposed in plasma is etched, in order to the surface smoothness needed for acquisition with fluorine-containing etching liquid such as HF etching liquid.The R on such as surfaceaValue can be about 1-100 microinch (about 0.025-2.5 micron), more preferably 40-60 microinch (about 1-1.5 micron).The outer surface of air injector is the most smooth.The concentration of HF and the time of etching can be changed, in order to the smoothness on the surface being exposed in plasma desired by acquisition.
Sealing surfaces 42,44 is polished, makes RaValue is preferably from about 12-20 microinch (0.3-0.5 micron).The characteristic length of sealing surfaces 42,44 is preferably from about 5-25 micron.
Removing overcover from sealing surfaces 42,44, air injector 40 is cleaned to remove metal pollutant from outer surface.Cleaning step makes one or more metal contaminant levels in Al, B, Ca, Cr, Cu, Fe, Li, Mg, Ni, K, Na, Ti and Zn of air injector 40 decline, and preferably drops to less than about 1000 × 1010Atom/centimetre2, more preferably less than about 100 × 1010Atom/centimetre2, most preferably less than about 10 × 1010Atom/centimetre2。
Therefore, the preferred embodiment of the method for finished quartz glass can be used for the parts having various sizes and shape of polish plasma processing device, and the different surfaces at parts provides different surface smoothnesses.The preferred embodiment of described method can provide for plasma reactor on identical parts has the surface being exposed in plasma improving particulates' properties, and provides the sealing surfaces with vacuum enhancing.
Although describe in detail the present invention with reference to specific embodiment, but for those skilled in the art, it is clear that can make various changes and modifications and use various equivalent under conditions of the scope of appended claims.
Claims (13)
1. the parts to being previously exposed to plasma in plasma arc processing apparatus are carried out
The method of Surface Finishing, including:
The Quartz glass surfaces being exposed to plasma of parts is cleaned with from this surface with cleanout fluid
Remove metal pollutant, this cleanout fluid comprise selected from oxalic acid, formic acid, acetic acid, citric acid and
At least one acid in mixture, wherein this is exposed to the Quartz glass surfaces of plasma clearly
Without mechanical polishing and/or chemical etching process before washing, and
Wherein parts are selected from air injector, dielectric window, electrode, observation port, side ring, focusing
Ring and restriction ring.
Method the most according to claim 1, wherein parts are dielectric window or air injector.
Method the most according to claim 1, this of wherein parts is exposed to the quartz of plasma
Natural quartz, the natural quartz of electric arc melting and the conjunction that the material of glass surface melts selected from flame
Become quartz, and surface is machining and/or the surface of sintering.
Method the most according to claim 1, wherein metal pollutant selected from Al, B, Ca, Cr,
Cu, Fe, Li, Mg, Ni, K, Na, Ti and Zn, and clean surface have at least one
Plant the level of described metal pollutant less than 1000 × 1010Atom/centimetre2。
Method the most according to claim 1, wherein metal pollutant selected from Al, B, Ca, Cr,
Cu, Fe, Li, Mg, Ni, K, Na, Ti and Zn, and clean surface have at least one
Plant the level of described metal pollutant less than 100 × 1010Atom/centimetre2。
Method the most according to claim 1, wherein metal pollutant selected from Al, B, Ca, Cr,
Cu, Fe, Li, Mg, Ni, K, Na, Ti and Zn, and clean surface have at least one
Plant the level of described metal pollutant less than 10 × 1010Atom/centimetre2。
Method the most according to claim 1, wherein metal pollutant is selected from Ca, Mg and Na.
Method the most according to claim 1, wherein this is exposed to the quartz glass table of plasma
The arithmetic average roughness R that mask hasaFor 1-100 microinch, and actual surface area/nominal table
Area ratio is 1.1-4.
Method the most according to claim 1, wherein this is exposed to the quartz glass table of plasma
The arithmetic average roughness R that mask hasaFor 1-100 microinch, and actual surface area/nominal table
Area ratio is 1.2-1.5.
Method the most according to claim 1, wherein this is exposed to the quartz glass table of plasma
The arithmetic average roughness R that mask hasaFor 5-30 microinch.
11. methods according to claim 1, wherein this is exposed to the quartz glass table of plasma
The arithmetic average roughness R that mask hasaFor 12-20 microinch.
The method of 12. 1 kinds of etching semiconductor substrates in plasma arc processing apparatus, described side
Method includes:
At least one is removed metal by the method for Surface Finishing according to claim 1 dirty
The parts of dye thing are arranged in the plasma chamber of plasma arc processing apparatus；And
Indoor at plasma, at least one semiconductor substrate of plasma etching.
13. methods according to claim 12, are additionally included in plasma etching semiconductor substrate
In the past parts plasma was adjusted less than l/2 hour.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/448,422 US7250114B2 (en) | 2003-05-30 | 2003-05-30 | Methods of finishing quartz glass surfaces and components made by the methods |
| US10/448,422 | 2003-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800173912A Division CN100404450C (en) | 2003-05-30 | 2004-05-28 | Methods of finishing quartz glass surfaces and components made by the methods |
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| CN102659320A CN102659320A (en) | 2012-09-12 |
| CN102659320B true CN102659320B (en) | 2016-11-30 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1164761A (en) * | 1996-05-08 | 1997-11-12 | 三星电子株式会社 | Method for plasma etching in process for fabrication of semiconductor device |
| CN1376307A (en) * | 1999-09-27 | 2002-10-23 | 卡伯特微电子公司 | Cleaning solution for semiconductor surfaces following chemical-mechanical polishing |
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1164761A (en) * | 1996-05-08 | 1997-11-12 | 三星电子株式会社 | Method for plasma etching in process for fabrication of semiconductor device |
| CN1376307A (en) * | 1999-09-27 | 2002-10-23 | 卡伯特微电子公司 | Cleaning solution for semiconductor surfaces following chemical-mechanical polishing |
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