CN102655204A - Sr-doping oxide BiCuSeO thermoelectric material and preparation method thereof - Google Patents

Sr-doping oxide BiCuSeO thermoelectric material and preparation method thereof Download PDF

Info

Publication number
CN102655204A
CN102655204A CN2012101324297A CN201210132429A CN102655204A CN 102655204 A CN102655204 A CN 102655204A CN 2012101324297 A CN2012101324297 A CN 2012101324297A CN 201210132429 A CN201210132429 A CN 201210132429A CN 102655204 A CN102655204 A CN 102655204A
Authority
CN
China
Prior art keywords
thermoelectric material
sintering
bicuseo
doping oxide
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2012101324297A
Other languages
Chinese (zh)
Other versions
CN102655204B (en
Inventor
裴延玲
宫声凯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beihang University
Original Assignee
Beihang University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beihang University filed Critical Beihang University
Priority to CN201210132429.7A priority Critical patent/CN102655204B/en
Publication of CN102655204A publication Critical patent/CN102655204A/en
Application granted granted Critical
Publication of CN102655204B publication Critical patent/CN102655204B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Powder Metallurgy (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

The invention discloses a Sr-doping oxide BiCuSeO thermoelectric material and a preparation method of the Sr-doping oxide BiCuSeO thermoelectric material, belonging to the technical field of new energy source materials. The preparation method comprises the following steps of ball-milling material mixing, solid-phase sintering, ball-milling refining, and discharging plasma sintering, and specifically comprises the following steps of: mixing Bi2O3 with the purity of 99.99%, SrO with the purity of 99.99%, Cu with the purity of 99.99%, Se with the purity of 99.99% and Bi with the purity of 99.99% according to a stoichiometric ratio, uniformly mixing in a ball milling manner, carrying out cold-pressing, carrying out a solid-phase reaction, pulverizing in the ball milling manner, and then carrying out the discharging plasma sintering to prepare Bi1-xSrxCuSeOoxide block bodies (x=0-0.125). Compared with other oxide thermoelectric materials, the Sr-doping oxide BiCuSeO thermoelectric material disclosed by the invention has the advantages of high conductivity, high temperature-difference electrodynamic potential, low thermal conductivity and the like; and the preparation method has the advantages of simple and convenient process, short synthesis and formation times and the like.

Description

A kind of Sr doping oxide BiCuSeO thermoelectric material and preparation method
Technical field
The invention belongs to the new energy materials technical field, particularly relate to a kind of Sr doping oxide BiCuSeO thermoelectric material and preparation method, relate to ball milling, solid phase reaction and discharge plasma sintering process.
Background technology
Thermoelectric material be a kind of can be with electric energy and the heat energy direct energy and material of conversion each other.The remarkable advantage of thermoelectric material is a kind of eco-friendly green energy resource material of noiselessness, pollution-free, movement-less part.An important performance indexes weighing thermoelectric material is exactly a thermoelectric figure of merit.Thermoelectricity comprises thermoelectric cooling and two phenomenons of thermo-electric generation, and generated output and refrigerating efficiency and thermoelectric figure of merit are proportional.To a certain material, its thermoelectricity capability figure of merit is provided by following formula: ZT=α 2σ T/ κ, wherein α is the thermoelectric power (Seebeck coefficient) of material, and σ is a conductivity of electrolyte materials, and κ is a thermal conductivity, and T is absolute temperature [G.J.Snyder, and E.S.Toberer, Nature Mater.7,105 (2008)].The dimensionless thermoelectric figure of merit of present most of thermoelectric materials is about " 1 ", and conversion efficiency of thermoelectric is about 1/3 of diesel engine generator generating efficiency about 10%, if thermoelectric figure of merit can reach about " 3 ", thermoelectric power generation will replace diesel generation to dominate the market.But the good thermoelectric material of using at present of performance all contains heavy metal element, and costs an arm and a leg.Like the Bi-Sb-Te alloy [B.Poudel, et al.Science 320,634 (2008)] of nanostructure, ancient ore deposit, filling side [A.Harnwunggmoung, et al.Appl.Phys.Lett.96,202107 (2010)], AgPb 18+xSbTe 20System [K.F.Hsu, et al.Science 303,818 (2004)], (AgSbTe 2) 1-x(GeTe) xAlloy [B.A.Cook, et al.J.Appl.Phys.101,053715 (2007)], In4Se 3Alloy [J.Rhyee, et al.Nature (London) 459,965 (2009)] etc.Compare with these materials, oxide pyroelectric material has high-temperature stability, and advantages such as low price receive much concern, yet oxide pyroelectric material ubiquity conductivity is bad, and thermal conductivity is high, causes the dimensionless thermoelectric figure of merit generally not high, like Zn 0.96Al 0.02Ga 0.02The ZT value of O oxide under the 1247K temperature is 0.65 [D.Berardan, et al.Solid State Comm.146,97 (2008)], In 1.8Ge 0.2O 3The ZT value of oxide under the 1273K temperature is 0.45 [M.Ohtaki, et al.J.Electron.Mater.38,1234 (2009)], yet these oxides can't be compared with traditional alloy phase on using.
Summary of the invention
The object of the present invention is to provide a kind of Sr doping oxide BiCuSeO thermoelectric material and preparation method, the present invention is with Bi 2O 3, SrO, Cu, Se and Bi powder be as initial feed, colds pressing through after mixing, and adopts solid-state reaction, ball milling and discharge plasma sintering prepare Sr doping BiCuSeO oxide pyroelectric material.
Concrete technological process is following:
(1), adopts Bi 2O 3, SrO, Cu, Se and Bi powder be as initial feed, presses Bi 2O 3: SrO: Cu: Se: Bi=(1/3-x): x: 1: 1: [1-2* (1/3-x)] atomic ratio batching.Wherein x=0.025~0.125 is preferred, x=0.023~0.075.
(2), raw material put into ball grinder evenly mix, rotational speed of ball-mill is 100~500rpm, the time is 15min~96h.Preferably, the ball milling time is 1~50h.
(3), with the powder that mixes, cold pressing, pressure is 100~250MPa, is pressed into disk.
(4), with the disk after the cold moudling, be placed on and carry out sintering in the quartz ampoule, sintering temperature is 300~700 ℃, temperature retention time is 48~240 hours, programming rate be 40~180 ℃ per hour, obtaining diameter is 10~20mm, highly is the Bi of 4~6mm 1-xSr xCuSeO (x=0.025~0.125) block materials.
(5), again with Bi 1-xSr xCuSeO (x=0.025~0.125) block materials ball milling powdered, rotational speed of ball-mill is 100~500rpm, the time is 15min~96h.Preferably, the ball milling time is 1~50h.
(6), with (5) gained powder graphite jig of packing into, put sintering in the discharge plasma sintering stove into, the sintering environment is a vacuum, vacuum degree is 4~7Pa.Under certain temperature, pressure, temperature retention time, carry out sintering, obtain Sr doping oxide BiCuSeO thermoelectric material; Sintering temperature is 200~500 ℃, and temperature retention time is 2~8min, and sintering pressure is 20~60MPa, and programming rate is 40 ℃~180 ℃/min.
The invention has the advantages that:
(1) thermoelectric material provided by the invention is compared with other oxide pyroelectric materials, and conductivity is higher, and thermoelectromotive force is big, thermal conductivity is low, the dimensionless thermoelectric figure of merit high;
(2) thermoelectric material preparation method technology provided by the invention is easy, and the synthetic time with moulding is short.
Description of drawings
Fig. 1 is BiCuSeO and Bi 0.925Sr 0.075The CuSeO x-ray diffractogram of powder;
Fig. 2 is BiCuSeO and Bi 0.925Sr 0.075The conductivity of CuSeO block materials concerns with variation of temperature;
Fig. 3 is BiCuSeO and Bi 0.925Sr 0.075The thermoelectromotive force of CuSeO block materials concerns with variation of temperature;
Fig. 4 is BiCuSeO and Bi 0.925Sr 0.075The thermal conductivity of CuSeO block materials concerns with variation of temperature;
Fig. 5 is BiCuSeO and Bi 0.925Sr 0.075The dimensionless thermoelectric figure of merit of CuSeO block materials concerns with variation of temperature.
Embodiment
Below in conjunction with accompanying drawing and embodiment Sr doping oxide BiCuSeO thermoelectric material provided by the invention and preparation method thereof is elaborated.
The present invention provides a kind of Sr doping oxide BiCuSeO thermoelectric material and preparation method thereof, and the chemical formula of described Sr doping oxide BiCuSeO thermoelectric material is Bi 1-xSr xCuSeO, x=0.025~0.125, preferred, x=0.025~0.075.The conductivity variations scope of described thermoelectric material is 470~48000Sm -1, the thermoelectromotive force excursion is+100~+ 375 μ VK -1, the thermal conductivity excursion is 0.45~1.05Wm -1K -1, maximum dimensionless thermoelectric figure of merit is 0.76 at 873K.
Above-mentioned Sr doping oxide BiCuSeO thermoelectric material prepares through following method:
(1) raw material is prepared: adopt Bi 2O 3(purity is 99.9%), SrO (purity is 99.99%), Cu (purity is 99.99%), Se (purity is 99.99%) and Bi (purity is 99.99) powder are pressed Bi as initial feed 2O 3: SrO: Cu: Se: Bi=(1/3-x): x: 1: 1: [1-2* (1/3-x)] atomic ratio batching, x=0.025~0.125.
(2) mixed material.Above-mentioned raw materials is put into ball mill ball milling 15min~96h under 100~500rpm rotating speed together.
(3) with the powder that mixes, the diameter of packing into is to press down at 100~250MPa pressure in the steel die of 10~20mm to process disk.
(4) with the disk after the cold moudling, be placed in the quartz ampoule 300~700 ℃ of sintering temperatures 48~240 hours, programming rate be 40~180 ℃ per hour, obtaining diameter is 10~20mm, highly is the Sr doping oxide BiCuSeO block materials of 4~6mm.Preferably, getting sintering temperature is 200-500 ℃, and sintering time is 2-8 minute.
(5) and then with Bi 1-xSr xCuSeO (x=0.025~0.125) block materials ball milling powdered, rotational speed of ball-mill is 100~500rpm, the time is 15min~96h.
(6) at last with the gained powder graphite jig of packing into, put sintering in the discharge plasma sintering stove into, the sintering environment is a vacuum, and vacuum degree is 4~7Pa.Under certain temperature, pressure, temperature retention time, carry out sintering, obtain Sr doping oxide BiCuSeO thermoelectric material; Sintering temperature is 200~500 ℃, and temperature retention time is 2~8min, and sintering pressure is 20~60MPa, and programming rate is 40 ℃~180 ℃/min.
Embodiment 1:Prepare a kind of Sr doping oxide BiCuSeO thermoelectric material Bi0.975Sr0.025CuSeO through method provided by the invention, concrete preparation process is following:
(1) prepares raw material: according to Bi 2O 3: SrO: Cu: Se: Bi=(1/3-x): x: 1: 1: [1-2* (1/3-x)] atomic ratio batching, x=0.025.Bi 2O 3(purity is 99.9%), SrO (purity is 99.99%), Cu (purity is 99.99%), Se (purity is 99.99%) and Bi (purity is 99.99) are powder.
(2) mixed material.Above-mentioned raw materials is put into ball mill ball milling 1h under the 100rpm rotating speed together.
(3) with the powder that mixes, the diameter of packing into is to press down at 150MPa pressure in the steel die of 10~20mm to process disk.
(4) with the disk after the cold moudling, be placed in the quartz ampoule 300 ℃ of sintering temperatures 240 hours, programming rate be 180 ℃ per hour, obtain identical with mould diameter, highly be the Sr doping oxide BiCuSeO block materials of 4mm.
(5) and then with Bi 1-xSr xCuSeO (x=0.025) block of material ball milling powdered, rotational speed of ball-mill is 100rpm, the time is 96h.
(6) at last with the gained powder graphite jig of packing into, put sintering in the discharge plasma sintering stove into, the sintering environment is a vacuum, and vacuum degree is 4~7Pa.Under certain temperature, pressure, temperature retention time, carry out sintering, obtain Sr doping oxide BiCuSeO thermoelectric material; Sintering temperature is 300 ℃, and temperature retention time is 3min, and sintering pressure is 60MPa, and programming rate is 180 ℃/min.The dimensionless thermoelectric figure of merit of the Sr doping oxide BiCuSeO thermoelectric material for preparing is 0.45 at 873K.
Embodiment 2:Prepare a kind of Sr doping oxide BiCuSeO thermoelectric material Bi0.925Sr0.075CuSeO through method provided by the invention, concrete preparation process is following:
(1) prepares raw material: according to Bi 2O 3: SrO: Cu: Se: Bi=(1/3-x): x: 1: 1: [1-2* (1/3-x)] atomic ratio batching, x=0.075.Bi 2O 3(purity is 99.9%), SrO (purity is 99.99%), Cu (purity is 99.99%), Se (purity is 99.99%) and Bi (purity is 99.99) are powder.
(2) mixed material.Above-mentioned raw materials is put into ball mill ball milling 50h under the 100rpm rotating speed together.
(3) with the powder that mixes, the diameter of packing into is to press down at 250MPa pressure in the steel die of 10~20mm to process disk.
(4) with the disk after the cold moudling, be placed in the quartz ampoule 700 ℃ of sintering temperatures 48 hours, programming rate be 40 ℃ per hour, obtaining diameter is 10~20mm, highly is the Sr doping oxide BiCuSeO block materials of 6mm.
(5) and then with Bi 1-xSr xCuSeO (x=0.075) bulk ball milling powdered, rotational speed of ball-mill is 500rpm, the time is 15min.
(6) at last with the gained powder graphite jig of packing into, put sintering in the discharge plasma sintering stove into, the sintering environment is a vacuum, and vacuum degree is 4~7Pa.Under certain temperature, pressure, temperature retention time, carry out sintering, sintering temperature is 500 ℃, and temperature retention time is 5min, and sintering pressure is 20MPa, and programming rate is 40 ℃/min.The dimensionless thermoelectric figure of merit that obtains Sr doping oxide BiCuSeO thermoelectric material is 0.62 at 873K.
Adopt to prepare BiCuSeO, prepare the technological parameter embodiment 0 as shown in table 1 of BiCuSeO, x=0, and the Bi for preparing with the present invention with embodiment 2 identical preparation methods 0.925Sr 0.075The CuSeO comparative analysis as a result that makes an experiment, sample that will be behind oversintering, carry out surface finish with sand paper after, carry out X-ray diffraction analysis and identify the thing phase composition.Fig. 1 is BiCuSeO and Bi 0.925Sr 0.075The x-ray diffractogram of powder of CuSeO.Can know that through analyzing main characteristic peak is the characteristic diffraction peak of BiCuSeO, successfully prepare Sr doping oxide BiCuSeO thermoelectric material.
After Sr doping oxide BiCuSeO block materials carried out surface finish cutting with sand paper, carry out the thermophysical property test, mainly comprise: thermoelectricity capability (conductivity, thermoelectromotive force, thermal conductivity) test.According to the above data that record, through the performance of thermal conductivity evaluating materials such as (thermal diffusion coefficient, specific heat and test density three's products).Fig. 2 is BiCuSeO and Bi 0.925Sr 0.075The conductivity of CuSeO block materials concerns that with variation of temperature Fig. 3 is BiCuSeO and Bi 0.925Sr 0.075The thermoelectromotive force of CuSeO block materials concerns that with variation of temperature Fig. 4 is BiCuSeO and Bi 0.925Sr 0.075The thermal conductivity of CuSeO block materials concerns that with variation of temperature Fig. 5 is BiCuSeO and Bi 0.925Sr 0.075The dimensionless thermoelectric figure of merit of CuSeO block materials concerns with variation of temperature.Gained dimensionless thermoelectric figure of merit is the peak of the oxide pyroelectric material of present report, shows that Sr doping oxide BiCuSeO block materials is a kind of thermoelectric material that development potentiality is arranged very much.
Find that in process of the test BiCuSeO has good thermoelectricity capability, the dimensionless thermoelectric figure of merit of 873K is 0.40, and after mixing through Sr, the conductivity variations scope is 470~48000Sm -1, the thermoelectromotive force excursion is+100~+ 375 μ VK -1, the thermal conductivity excursion is 0.45~1.05Wm -1K -1, the maximum dimensionless thermoelectric figure of merit that Sr optimizes the back acquisition of mixing is 0.76 at 873K.Above performance all is better than the oxide pyroelectric material of having reported in electrical transmission and heat transfer, can compare mutually with traditional alloy type figure of merit thermoelectric material.
The present invention shows, can prepare a kind of Sr doping oxide BiCuSeO thermoelectric material through simple method, and test result shows that it is a kind of potential thermoelectric block body material, and the thermoelectricity capability of this oxide does not appear in the newspapers at present as yet.
Adopt preparation method provided by the invention,, prepared various Bi as shown in table 1 below respectively through changing technological parameter 1-xSr xThe CuSeO thermoelectric material:
Table 1: use preparation method provided by the invention and prepare Bi 1-xSr xThe embodiment of CuSeO
Figure BDA0000158621120000051
In sum, the present invention has prepared a kind of Sr doping oxide BiCuSeO thermoelectric material that development potentiality is arranged very much through solid-state reaction, ball milling and discharge plasma sintering method.Described Sr doping oxide BiCuSeO thermoelectric material at the dimensionless thermoelectric figure of merit of 873K greater than 0.28; Maximum reaches 0.76; And have suitable conductivity, thermoelectromotive force and thermal conductivity, a kind of temperature difference energy source conversion material that can thermoelectricity directly be converted into electric energy that warm area is used in being suitable for.Have great application prospect at used heat utilization, energy development and field of environment protection.

Claims (6)

1. Sr doping oxide BiCuSeO thermoelectric material, it is characterized in that: the chemical formula of described thermoelectric material is Bi 1-xSr xCuSeO, x=0.025~0.125.
2. a kind of Sr doping oxide BiCuSeO thermoelectric material according to claim 1, it is characterized in that: the chemical formula of described thermoelectric material is Bi 1-xSr xCuSeO, x=0.025~0.075.
3. a kind of Sr doping oxide BiCuSeO thermoelectric material according to claim 1, it is characterized in that: the conductivity variations scope of described thermoelectric material is 470~48000Sm -1, the thermoelectromotive force excursion is+100~+ 375 μ VK -1, the thermal conductivity excursion is 0.45~1.05Wm -1K -1, maximum dimensionless thermoelectric figure of merit is 0.76 at 873K.
4. the preparation method of the described Sr doping oxide of claim 1 a BiCuSeO thermoelectric material is characterized in that comprising the steps:
The first step adopts Bi 2O 3, SrO, Cu, Se and Bi powder be as initial feed, presses Bi 2O 3: SrO: Cu: Se: Bi=(1/3-x): x: 1: 1: [1-2* (1/3-x)] atomic ratio batching, x=0.025~0.125;
Second step, raw material to be put into ball grinder evenly mix, rotational speed of ball-mill is 100~500rpm, the time is 15min~96h;
The 3rd step, the powder that mixes to be colded pressing, pressure is 100~250MPa, is pressed into disk;
The 4th the step, the disk after the cold moudling is carried out sintering, sintering temperature is 300~700 ℃, temperature retention time is 48~240 hours, programming rate be 40~180 ℃ per hour, obtaining diameter is 10~20mm, highly is the Bi of 4~6mm 1-xSr xCuSeO block materials, wherein x=0.025~0.125;
The 5th step is again with Bi 1-xSr xCuSeO block materials ball milling powdered, rotational speed of ball-mill is 100~500rpm, the ball milling time is 15min~96h;
In the 6th step,, put sintering in the discharge plasma sintering stove into the 5th step gained powder graphite jig of packing into; The sintering environment is a vacuum, and vacuum degree is 4~7Pa, carries out sintering; Sintering temperature is 200~500 ℃, and temperature retention time is 2~8min, and sintering pressure is 20~60MPa; Programming rate is 40 ℃~180 ℃/min, obtains Sr doping oxide BiCuSeO thermoelectric material.
5. the preparation method of Sr doping oxide BiCuSeO thermoelectric material according to claim 4 is characterized in that: the temperature of discharge plasma sintering is 300~500 ℃ among the described preparation method, and temperature retention time is 3~8min.
6. the preparation method of Sr doping oxide BiCuSeO thermoelectric material according to claim 4 is characterized in that: the ball milling time is 1~50h in said second step.
CN201210132429.7A 2012-04-28 2012-04-28 Preparation method of sr-doping oxide BiCuSeO thermoelectric material Active CN102655204B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210132429.7A CN102655204B (en) 2012-04-28 2012-04-28 Preparation method of sr-doping oxide BiCuSeO thermoelectric material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210132429.7A CN102655204B (en) 2012-04-28 2012-04-28 Preparation method of sr-doping oxide BiCuSeO thermoelectric material

Publications (2)

Publication Number Publication Date
CN102655204A true CN102655204A (en) 2012-09-05
CN102655204B CN102655204B (en) 2014-04-30

Family

ID=46730796

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210132429.7A Active CN102655204B (en) 2012-04-28 2012-04-28 Preparation method of sr-doping oxide BiCuSeO thermoelectric material

Country Status (1)

Country Link
CN (1) CN102655204B (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103011838A (en) * 2012-10-24 2013-04-03 中国航空工业集团公司北京航空材料研究院 Preparation method of BiCuSeO-based pyroelectric oxide powder
CN103910339A (en) * 2014-01-20 2014-07-09 武汉理工大学 Ultrafast preparation method of high-performance BiCuSeO-based blocky thermoelectric material having nanometer layered structure
WO2014146485A1 (en) * 2013-03-19 2014-09-25 武汉理工大学 Thermoelectric compound preparation based on self-propagating combustion synthesis new criterion
CN104218143A (en) * 2014-08-20 2014-12-17 中国航空工业集团公司北京航空材料研究院 BiAgSeTe-based thermoelectric material and preparation method thereof
CN105140383A (en) * 2015-07-08 2015-12-09 上海大学 Composite PbSe-based thermoelectric material doped with Sr and Na and preparation method thereof
CN105308766A (en) * 2013-10-04 2016-02-03 株式会社Lg化学 Novel compound semiconductor and use thereof
CN105957957A (en) * 2016-06-20 2016-09-21 盐城工学院 Ru element-doped Ca<3>CO<4>O<9+delta>-based thermoelectric material and preparation method thereof
CN106395764A (en) * 2016-08-29 2017-02-15 北京化工大学 Preparation method of quaternary layered compound
CN106492845A (en) * 2016-10-09 2017-03-15 曾锦全 A kind of Ag loads the preparation method and applications of BiCuSeO wide spectrum photochemical catalysts
CN107324291A (en) * 2017-02-27 2017-11-07 武汉理工大学 The method that one step prepares BiCuSeO base block thermoelectric materials
CN107394035A (en) * 2017-07-06 2017-11-24 武汉科技大学 A kind of Sb doping BiCuSeO thermoelectric materials and preparation method thereof
CN107946450A (en) * 2017-11-29 2018-04-20 大连理工大学 One kind doping valence variation element collaboration optimization BiCuSeO base thermoelectricity materials and preparation method thereof
CN109256459A (en) * 2017-07-12 2019-01-22 中国科学院大连化学物理研究所 A kind of how metal co-doped GeSe base thermoelectricity material and preparation method
CN109273584A (en) * 2018-07-16 2019-01-25 叶泽龙 A kind of vehicle exhaust temperature difference electricity generation device thermoelectric material and power generator
CN110078476A (en) * 2019-04-18 2019-08-02 广西大学 A kind of Al doping BiCuSeO base thermoelectricity material and preparation method thereof
CN111162160A (en) * 2018-11-08 2020-05-15 中国科学院大连化学物理研究所 P-type cubic phase Ge-Se-based thermoelectric material and preparation method thereof
CN112403496A (en) * 2020-12-05 2021-02-26 清华大学 Preparation method and application of photothermal thermoelectric catalyst based on thermoelectric material
CN112723874A (en) * 2021-01-18 2021-04-30 武汉理工大学 Method for optimizing performance of BiCuSeO-based thermoelectric material and texture aid thereof
CN113385682A (en) * 2021-06-21 2021-09-14 福州大学 Se-doped tetragonal phase Sr2Bi material and preparation method thereof
CN114249304A (en) * 2020-09-25 2022-03-29 中国科学院大连化学物理研究所 High-performance BiTe-based composite thermoelectric material and preparation method thereof
CN114804037A (en) * 2022-04-28 2022-07-29 安徽大学 Pb/In co-doped BiCuSeO thermoelectric material and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101082114A (en) * 2007-05-28 2007-12-05 宁波工程学院 Middle-low temperature pseudo-binary electrothermal alloy and preparation process
CN101271955A (en) * 2008-05-09 2008-09-24 北京科技大学 Bi-S binary system pyroelectric material and production method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101082114A (en) * 2007-05-28 2007-12-05 宁波工程学院 Middle-low temperature pseudo-binary electrothermal alloy and preparation process
CN101271955A (en) * 2008-05-09 2008-09-24 北京科技大学 Bi-S binary system pyroelectric material and production method

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HIDENORIHIRAMATSU 等: "Crystal Structures, Optoelectronic Properties, and Electronic Structures of Layered Oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te): Effects of Electronic Configurations of M3+ Ions", 《CHEMISTRY OF MATERIALS》 *
L. D. ZHAO 等: "Bi1-xSrxCuSeO oxyselenides as promising thermoelectric materials", 《APPLIED PHYSICS LETTERS》 *
YONG LIU 等: "Remarkable Enhancement in Thermoelectric Performance of BiCuSeO by Cu Deficiencies", 《JOURNAL OF THE AMERICAN CHEMICAL SOCIETY》 *

Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103011838A (en) * 2012-10-24 2013-04-03 中国航空工业集团公司北京航空材料研究院 Preparation method of BiCuSeO-based pyroelectric oxide powder
US10913119B2 (en) 2013-03-19 2021-02-09 Wuhan University Of Technology Thermoelectric materials synthesized by self-propagating high temperature synthesis process and methods thereof
US10913116B2 (en) 2013-03-19 2021-02-09 Wuhan University Of Technology Thermoelectric materials synthesized by self-propagating high temperature synthesis process and methods thereof
US11433456B2 (en) 2013-03-19 2022-09-06 Wuhan University Of Technology Thermoelectric materials synthesized by self-propagating high temperature synthesis process and methods thereof
JP2016506287A (en) * 2013-03-19 2016-03-03 武漢理工大学 Preparation method of thermoelectric compounds based on new standard of self-propagating combustion synthesis
US10913117B2 (en) 2013-03-19 2021-02-09 Wuhan University Of Technology Thermoelectric materials synthesized by self-propagating high temperature synthesis process and methods thereof
US10913115B2 (en) 2013-03-19 2021-02-09 Wuhan University Of Technology Thermoelectric materials synthesized by self-propagating high temperature synthesis process and methods thereof
US10500642B2 (en) 2013-03-19 2019-12-10 Wuhan University Of Technology Thermoelectric materials synthesized by self-propagating high temperature synthesis process and methods thereof
EP2977129A4 (en) * 2013-03-19 2017-03-15 Wuhan University Of Technology Thermoelectric compound preparation based on self-propagating combustion synthesis new criterion
WO2014146485A1 (en) * 2013-03-19 2014-09-25 武汉理工大学 Thermoelectric compound preparation based on self-propagating combustion synthesis new criterion
US10913114B2 (en) 2013-03-19 2021-02-09 Wuhan University Of Technology Thermoelectric materials synthesized by self-propagating high temperature synthesis process and methods thereof
US10913118B2 (en) 2013-03-19 2021-02-09 Wuhan University Of Technology Thermoelectric materials synthesized by self-propagating high temperature synthesis process and methods thereof
CN105308766A (en) * 2013-10-04 2016-02-03 株式会社Lg化学 Novel compound semiconductor and use thereof
CN105308766B (en) * 2013-10-04 2017-12-05 株式会社Lg化学 Noval chemical compound semiconductor and application thereof
CN103910339A (en) * 2014-01-20 2014-07-09 武汉理工大学 Ultrafast preparation method of high-performance BiCuSeO-based blocky thermoelectric material having nanometer layered structure
CN104218143A (en) * 2014-08-20 2014-12-17 中国航空工业集团公司北京航空材料研究院 BiAgSeTe-based thermoelectric material and preparation method thereof
CN105140383B (en) * 2015-07-08 2018-07-10 上海大学 Compound PbSe base thermoelectricity materials for mixing Sr and Na and preparation method thereof
CN105140383A (en) * 2015-07-08 2015-12-09 上海大学 Composite PbSe-based thermoelectric material doped with Sr and Na and preparation method thereof
CN105957957A (en) * 2016-06-20 2016-09-21 盐城工学院 Ru element-doped Ca<3>CO<4>O<9+delta>-based thermoelectric material and preparation method thereof
CN106395764A (en) * 2016-08-29 2017-02-15 北京化工大学 Preparation method of quaternary layered compound
CN106395764B (en) * 2016-08-29 2018-06-26 北京化工大学 A kind of preparation method of quaternary lamellar compound
CN106492845A (en) * 2016-10-09 2017-03-15 曾锦全 A kind of Ag loads the preparation method and applications of BiCuSeO wide spectrum photochemical catalysts
CN107324291A (en) * 2017-02-27 2017-11-07 武汉理工大学 The method that one step prepares BiCuSeO base block thermoelectric materials
CN107394035A (en) * 2017-07-06 2017-11-24 武汉科技大学 A kind of Sb doping BiCuSeO thermoelectric materials and preparation method thereof
CN109256459A (en) * 2017-07-12 2019-01-22 中国科学院大连化学物理研究所 A kind of how metal co-doped GeSe base thermoelectricity material and preparation method
CN109256459B (en) * 2017-07-12 2020-12-15 中国科学院大连化学物理研究所 Multi-metal co-doped GeSe-based thermoelectric material and preparation method thereof
CN107946450B (en) * 2017-11-29 2019-10-11 大连理工大学 A kind of doping valence variation element collaboration optimization BiCuSeO base thermoelectricity material
CN107946450A (en) * 2017-11-29 2018-04-20 大连理工大学 One kind doping valence variation element collaboration optimization BiCuSeO base thermoelectricity materials and preparation method thereof
CN109273584A (en) * 2018-07-16 2019-01-25 叶泽龙 A kind of vehicle exhaust temperature difference electricity generation device thermoelectric material and power generator
CN111162160A (en) * 2018-11-08 2020-05-15 中国科学院大连化学物理研究所 P-type cubic phase Ge-Se-based thermoelectric material and preparation method thereof
CN111162160B (en) * 2018-11-08 2023-09-26 中国科学院大连化学物理研究所 P-type cubic phase Ge-Se-based thermoelectric material and preparation method thereof
CN110078476A (en) * 2019-04-18 2019-08-02 广西大学 A kind of Al doping BiCuSeO base thermoelectricity material and preparation method thereof
CN110078476B (en) * 2019-04-18 2022-03-25 广西大学 Al-doped BiCuSeO-based thermoelectric material and preparation method thereof
CN114249304A (en) * 2020-09-25 2022-03-29 中国科学院大连化学物理研究所 High-performance BiTe-based composite thermoelectric material and preparation method thereof
CN112403496A (en) * 2020-12-05 2021-02-26 清华大学 Preparation method and application of photothermal thermoelectric catalyst based on thermoelectric material
CN112723874B (en) * 2021-01-18 2022-07-08 武汉理工大学 Method for optimizing performance of BiCuSeO-based thermoelectric material and texture aid thereof
CN112723874A (en) * 2021-01-18 2021-04-30 武汉理工大学 Method for optimizing performance of BiCuSeO-based thermoelectric material and texture aid thereof
CN113385682B (en) * 2021-06-21 2022-07-12 福州大学 Se-doped tetragonal phase Sr2Bi material and preparation method thereof
CN113385682A (en) * 2021-06-21 2021-09-14 福州大学 Se-doped tetragonal phase Sr2Bi material and preparation method thereof
CN114804037A (en) * 2022-04-28 2022-07-29 安徽大学 Pb/In co-doped BiCuSeO thermoelectric material and preparation method thereof

Also Published As

Publication number Publication date
CN102655204B (en) 2014-04-30

Similar Documents

Publication Publication Date Title
CN102655204B (en) Preparation method of sr-doping oxide BiCuSeO thermoelectric material
CN100391021C (en) Ag-Pb-Sb-Te thermoelectric materials and preparation process thereof
CN103928604B (en) A kind of supper-fast method preparing N-shaped bismuth telluride-base high performance thermoelectric material
CN103011838B (en) Preparation method of BiCuSeO-based pyroelectric oxide powder
CN105990511B (en) A kind of method that step reaction in-situ prepares homogeneous block thermoelectric material
CN105671344B (en) One step prepares high-performance CoSb3The method of base thermoelectricity material
CN102931335A (en) Graphene compounded with stibine cobalt base skutterudite thermoelectric material and preparation method of material
CN104046876B (en) A kind of Graphene/Cu2AX3Type thermoelectric composite material and preparation method
Weller et al. Rapid synthesis of zinc and nickel co-doped tetrahedrite thermoelectrics by reactive spark plasma sintering and mechanical alloying
CN101478026A (en) Thermoelectric compounds and preparation thereof
CN114249304A (en) High-performance BiTe-based composite thermoelectric material and preparation method thereof
CN103909264B (en) A kind of high-performance Cu with nano-pore structure2Se block thermoelectric material and fast preparation method thereof
CN101338386B (en) Method for preparing TiNi Sn based thermoelectric compounds
CN101101954A (en) A cadmium-stibium-based p type thermal electrical material and its making method
CN106129241B (en) The method that solid reaction process prepares stacking faults chalcogenide thermoelectric material
CN102650005B (en) The high-pressure synthesis preparation method of high-performance densification filling skutterudite thermoelectric material
CN107794387B (en) A kind of supper-fast preparation β-Zn4Sb3The method of base block thermoelectric material
CN111446357A (en) Preparation of Cu2Method for Se thermoelectric material
CN101358313B (en) Method for improving Bi-S binary system thermoelectric material performance
Ioannidou et al. Microwave Synthesis and Characterization of the Series Co 1− x Fe x Sb 3 High Temperature Thermoelectric Materials
CN102220537B (en) Method for one-step quickly preparing high manganese-silicon thermoelectric material by combination of synthesizing and sintering of discharge plasma
CN102174677B (en) Solid-phase reaction preparation method for silicious manganese thermoelectric material
CN104762501B (en) Method for preparing silver antimony telluride thermoelectric material by combining low-temperature solid-phase reaction with hot-pressing process
CN111048658A (en) SnI2Doped CsGeI3Perovskite thermoelectric material and preparation method thereof
CN107324292A (en) A kind of supper-fast preparation high-performance Cu2The method of Se block thermoelectric materials

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant