CN102651408A - Solar energy base plate for improving fracture strength - Google Patents
Solar energy base plate for improving fracture strength Download PDFInfo
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- CN102651408A CN102651408A CN2011100458976A CN201110045897A CN102651408A CN 102651408 A CN102651408 A CN 102651408A CN 2011100458976 A CN2011100458976 A CN 2011100458976A CN 201110045897 A CN201110045897 A CN 201110045897A CN 102651408 A CN102651408 A CN 102651408A
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- base plate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a solar energy base plate for improving the fracture strength, which includes a first upper surface, a plurality of first convex structures and a plurality of first concave zones, wherein the first convex structures are formed on the upper surface; and the first concave zones are formed on the peripheries of the first convex structures. According to the invention, the combination of the first convex structures and the first concave zones improves the fracture strength of the solar energy base plate, thereby resisting high tension deflexion.
Description
Technical field
The present invention is about a kind of solar base plate, and particularly relevant for a kind of in order to improve the solar base plate of rupture strength (fracture strength).
Background technology
In general, the solar cell of convention mostly with semiconductor crystal wafers such as silicon as substrate.Yet, because semiconductor crystal wafer such as silicon belongs to hard brittle material, the external impacts that caused by impact, especially the solar cell assembling process of external force, and cause breaking of semiconductor crystal wafer such as silicon.Except solar cell, Silicon Wafer is widely applied in the manufacturing of many semiconductor subassemblies.In addition, owing to the increase of the demand of semiconductor subassembly causes being critical of silicon raw material, therefore how to avoid the silicon raw material to waste (for example breaking because of the impact that receives external force) improperly and improve the yield of processing procedure, reality is a problem demanding prompt solution.With the solar cell is example, if solar cell can be produced on the substrate with high rupture strength, then can reduce the possibility that substrate breakage takes place solar cell in the subsequent group process of assembling.
See also Figure 1A and Figure 1B.The Silicon Wafer test piece of Figure 1A to Figure 1B convention is picture shot in the process of test rupture strength.The Silicon Wafer test piece is made by monocrystalline silicon.In the stressed process of test piece, stress is concentrated in the local zone of test piece, and when stress increases gradually, (especially receiving the zone of tension force) can begin to produce slight crack on these zones.Along with the increase of loading, the phenomenon that slight crack extends (crack propagation) is tending towards obviously, then causes test piece to be broken into several piece at last, shown in Figure 1B.
Because the phenomenon that stress concentrates on the local zone of test piece can take place in the Silicon Wafer test piece of convention when stressed; Therefore if can make the Silicon Wafer test piece when stressed; Stress is distributed in the whole test piece fifty-fifty, and then the rupture strength of Silicon Wafer test piece certainly will be able to obtain to promote.Therefore, main purpose of the present invention is to provide a kind of solar base plate, to address the above problem.
Summary of the invention
It is a kind of in order to promote the solar base plate of rupture strength that a purpose of the present invention is to provide, and the surface forms first bulge-structure and first sunk area on it, with the rupture strength of lifting solar base plate.
According to a specific embodiment of the present invention, the present invention provides a kind of solar base plate with high rupture strength, and it includes a upper surface, a plurality of first bulge-structure and a plurality of first sunk area.These first bulge-structures are formed at upper surface.Each first sunk area be formed at these first bulge-structures around.The present invention makes the rupture strength of solar base plate be raised by the combination of first bulge-structure and first sunk area, use the opposing high-tension around song.In addition, upper surface be solar base plate receive the tension force face.In addition, solar base plate amorphous substrate, monocrystal substrate or polycrystalline substrate, detailed, the monocrystal substrate monocrystalline silicon substrate.And first bulge-structure can be a plurality of nano-pillar or a plurality of nanoneedle, and wherein the spacing between each other top of two adjacent nano-pillar or nanoneedle is between tens nanometer to hundreds of nanometers.
According to another specific embodiment of the present invention; Solar base plate with high rupture strength of the present invention has more a lower surface; Said lower surface has a plurality of second bulge-structures and a plurality of second sunk area, each second sunk area be formed at these second bulge-structures around.
In sum; It is a kind of in order to promote the solar base plate of rupture strength that the present invention provides; This substrate has the combination of first bulge-structure and first sunk area; The stress intensity that makes substrate to bear is able to promote, and has also promoted the rupture strength of solar base plate simultaneously, and this measure can reduce the possibility that solar base plate breaks in follow-up manufacturing solar cells process.
Can graphicly further be understood by following detailed Description Of The Invention and appended about advantage of the present invention and spirit.
Description of drawings
Figure 1A and Figure 1B are Silicon Wafer test piece picture shot in the process of test rupture strength of convention.
Fig. 2 A illustrates the profile according to the solar base plate of a specific embodiment of the present invention.
Fig. 2 B illustrates the profile according to the solar base plate of another specific embodiment of the present invention.
Fig. 2 C illustrates the profile according to the solar base plate of another specific embodiment of the present invention.
Fig. 2 D illustrates the profile according to the solar base plate of another specific embodiment of the present invention.
Fig. 3 is according to the outward appearance picture of first bulge-structure of solar base plate of the present invention.
Fig. 4 A and Fig. 4 B solar base plate according to the present invention is picture shot in the process of test rupture strength.
The test data of Fig. 5 A and Fig. 5 B solar base plate according to the present invention in the rupture strength test.
Fig. 6 A illustrates the profile of solar base plate according to the present invention when bending.
The real data of the maximum stress that Fig. 6 B explanation bulge-structure can bear for solar base plate.
Description of reference numerals:
1: solar base plate
10a: upper surface 10b: lower surface
122: the second bulge-structures of 102: the first bulge-structures
124: the second sunk areas of 104: the first sunk areas
102a: nanoneedle 102b: nano-pillar
102a ': the 102b ' of nanoneedle colony: nano-pillar colony.
Embodiment
See also Fig. 2 A, Fig. 2 A illustrates the profile according to the solar base plate of a specific embodiment of the present invention.As shown in the figure, solar base plate 1 of the present invention comprises a upper surface 10a, a plurality of first bulge-structure 102 and a plurality of first sunk area 104.Each first bulge-structure 102 is formed at upper surface 10a.Each first sunk area 104 be formed at these first bulge-structures 102 around.Below do detailed explanation with regard to said modules respectively.
What in addition, the upper surface 10a of solar base plate 1 can be further defined as solar base plate 1 receives the tension force face.At this, when pressure put on solar base plate 1 one side surfaces, the surface of directly bearing pressure was the face of being stressed, and the said face that is stressed is because of the pressure deformation of inwardly contracting; Relative, the back side of the face that is stressed on the solar base plate 1 is the tension force face that receives, and the said tension force face that receives outwards stretches deformation because of pressure.In practice, because the present invention when by the structure of solar base plate 1, making it arrange in pairs or groups follow-up manufacturing solar cells, can improve the rupture strength of solar cell.Therefore, in this present invention upper surface 10a is not particularly limited, as long as can improve the rupture strength of solar base plate 1, the arbitrary suitable surface of this solar base plate 1 all can be upper surface 10a.
See also Fig. 2 B, Fig. 2 B illustrates the profile according to the solar base plate of another specific embodiment of the present invention.As shown in the figure, solar base plate 1 of the present invention has a lower surface 10b, a plurality of second bulge-structure 122 and a plurality of sunk area 124 in addition.Each second sunk area 124 be formed at these second bulge-structures 122 around.The lower surface 10b of solar base plate 1 of the present invention can be further defined as the face that is stressed of solar base plate 1.In practice, first bulge-structure 102 and second bulge-structure 122 can use same process, make solar base plate 1 both sides lip-deep structural thickness about equally.
From the angle of microcosmic, more comprise many nanostructures in first bulge-structure 102, and these nanostructures collocation sunk areas 104, can promote the rupture strength of solar base plate 1.
See also Fig. 2 A to Fig. 2 D.Fig. 2 C illustrates the profile according to the solar base plate of another specific embodiment of the present invention.Fig. 2 D illustrates the profile according to the solar base plate of another specific embodiment of the present invention.As shown in the figure; Among the upper surface 10a of solar base plate 1 of the present invention; First bulge-structure 102 can be a plurality of nanostructures, and said nanostructure profile can form like (nanotip) 102a of the nanoneedle among Fig. 2 A or like the nano-pillar among Fig. 2 C (nanorod or nanopillar) 102b.It should be noted that solar base plate 1 of the present invention has a upper surface 10a, and nanoneedle 102a or nano-pillar 102b are formed by the downward etching of upper surface 10a of solar base plate 1.Aforesaid etching can be any etch process that is applicable to the substrate of solar cell, and for instance, said etch process can be the chemical etching processing procedure.Yet the upper surface 10a of solar base plate 1 does not limit through etching and can only produce nanoneedle 102a and maybe can only produce nano-pillar 102b; Opposite, nanoneedle 102a and nano-pillar 102b more can appear at upper surface 10a simultaneously.
In addition; Nanoneedle 102a and nano-pillar 102b are except may be separately formed in the upper surface 10a of solar base plate 1 goes up, and a plurality of nanoneedle 102a or a plurality of nano-pillar 102b can also be connected with each other to constitute a 102a ' of nanoneedle colony or the 102b ' of nano-pillar colony.Wherein, the spacing between each other top of two adjacent nanoneedle 102a and nano-pillar 102b can be between tens nanometer to hundreds of nanometers, and the height that each nanoneedle 102a and nano-pillar 102b can have a micron grade.At this; The height that spacing between two adjacent nanoneedle 102a of definable or nano-pillar 102b top in contrast to nanoneedle 102a or nano-pillar 102b is a depth-to-width ratio R1; Said depth-to-width ratio R1 can determine by the etching parameter of etch process, for example etching period and etch temperature etc.Test the result factually, depth-to-width ratio R1 can be greater than 1.5.In a preferred embodiment, depth-to-width ratio R1 can be in 2 ~ 4 scope.
In other words, the surperficial above that 10a of solar base plate of the present invention 1 itself forms a plurality of nanoneedle 102a or nano-pillar 102b, so nanoneedle 102a or nano-pillar 102b can be homogeneous material with solar base plate 1.In a specific embodiment, if solar base plate 1 is a monocrystalline silicon substrate, then the upper surface 10a of monocrystalline silicon substrate can have the crystalline orientation of [100] or [111].By the formation of nanoneedle 102a or nano-pillar 102b, solar base plate 1 rupture strength own obtains to promote.What deserves to be mentioned is that if solar base plate 1 is combined by multiple layers of different materials, nanoneedle 102a or nano-pillar 102b more can be any suitable material of other substrate that is applicable to solar cell 1.
On the other hand, can be formed at the nanostructure of solar base plate 10 both side surface equally from the angle of microcosmic.See also Fig. 2 B and Fig. 2 D.As shown in the figure; Among the lower surface 10b of solar base plate 1 of the present invention; Second bulge-structure 122 can be a plurality of nanostructures; And said nanostructure profile can form nanoneedle (nanotip) 102a that is same as among Fig. 2 A or like the nano-pillar among Fig. 2 C (nanorod or nanopillar) 102b, not give unnecessary details at this.At this, compared to Fig. 2 A and Fig. 2 C, the embodiment that the both side surface that Fig. 2 B and Fig. 2 D are disclosed all has a nanostructure can further promote the rupture strength of solar base plate 1 of the present invention about percent 15.In other words, if the both side surface of solar base plate 1 all has nanostructure, bigger external force can be born and unlikely breaking in the surface of then said substrate 1.
In addition, see also Fig. 3.The outward appearance picture of first bulge-structure of Fig. 3 solar base plate according to the present invention.A plurality of first bulge-structure 102 of the present invention can be that nanoneedle 102a and nano-pillar 102b are formed on the upper surface 10a of solar base plate 1 thick and fast.Be noted that, nanoneedle 102a and nano-pillar 102b can be regularly or irregular terrain profiles be formed on the upper surface 10a of solar base plate 1.In practical application, nanoneedle 102a and nano-pillar 102b can form via aforesaid chemical etching processing procedure.
Moreover; Solar base plate 1 of the present invention can include one first micrometer structure layer and one second micrometer structure layer (not being shown among the figure) in addition; This first micrometer structure layer can be formed between the upper surface 10a and first bulge-structure 102, and this second micrometer structure layer is to be formed between the lower surface 10b and second bulge-structure 122.
The rupture strength of solar base plate 1 of the present invention can see through the test of three-point bending strength (three-point bending strength) and learn.See also Fig. 4 A and Fig. 4 B.Fig. 4 A and Fig. 4 B be solar base plate 1 picture shot in the process of test rupture strength according to the present invention.In this test process, test piece is the example explanation with the test piece of a monocrystalline silicon wafer crystal, and the surface of the monocrystalline silicon wafer crystal of tested person has the crystalline orientation of [100] or [111].
Shown in Fig. 4 A to Fig. 4 B, when the loading of bearing when test piece overstepped the extreme limit, smashing breaking took place in the test piece meeting.This phenomenon explanation test piece is after absorbing lot of energy, just to break.Can infer as the situation of breaking of bulletproof glass relatively and general glass and to learn that the rupture strength that test piece had among Fig. 4 A to Fig. 4 B is really greater than the test piece among Figure 1A to Figure 1B.
See also Fig. 5 A and Fig. 5 B.Fig. 5 A and Fig. 5 B be the test data of solar base plate in the rupture strength test according to the present invention.The present invention is the example explanation with the solar base plate that test has the crystalline orientation of [100] and [111] respectively.Be noted that, because test piece when bearing loading, is normally receiving the tension force face to produce slight crack and to other local extension, is being formed at its rupture strength of tester substrate that receives the tension force face so the present invention is directed to nanostructure.
Shown in Fig. 5 A and Fig. 5 B; No matter crystalline orientation is the Silicon Wafer of [100] or [111]; Measured rupture strength all obtains to promote significantly, proves that on behalf of solar base plate according to the present invention, comminuted the breaking of test piece really have bigger rupture strength than the monocrystalline silicon wafer crystal of convention among Fig. 4 A to Fig. 4 B.In addition, the Silicon Wafer of two kinds of surface types has identical young's modulus haply, explains that according to the present invention solar base plate needn't change the essence of material, only Silicon Wafer is done surface treatment and forms nanostructure and can promote its rupture strength.
The upper surface of solar base plate of the present invention or lower surface form first bulge-structure or second bulge-structure and first sunk area or second sunk area; And then the rupture strength of solar base plate of the present invention can be by the possible cause that promotes significantly; When solar base plate bears loading; Stress can be distributed among the said sunk area fifty-fifty, rather than picture is distributed in local zone traditionally.
For instance, the solar base plate of traditional 6 inch, 200 micron thick generally all can't be crooked, yet the present invention makes solar base plate of the present invention can produce deformation to a certain degree by the design of first or second bulge-structure and first or second sunk area.See also Fig. 6 A.Fig. 6 A illustrates the profile of solar base plate according to the present invention when bending.Shown in Fig. 6 A, when solar base plate of the present invention receives external force,, and then make the flexible distortion of solar base plate of the present invention because first or second bulge-structure and first or second sunk area can disperse suffered stress.In addition, the present invention more can integrate the solar cell processing procedure, makes solar cell have bigger industrial utilization.
See also Fig. 6 B.The real data of the maximum stress that Fig. 6 B explanation bulge-structure can bear for solar base plate.Shown in Fig. 6 B, type one expression solar base plate is monocrystalline silicon and does not have first bulge-structure; Type two expression solar base plates are monocrystalline silicon and receive the tension force face and the face that is stressed all to have first and second bulge-structure; Type three expression solar base plates are that the monocrystalline silicon and the mask that is stressed have second bulge-structure; Type four expression solar base plates are monocrystalline silicon and receive tension mask that first bulge-structure is arranged.Can learn from above-mentioned chart; When solar base plate receive tension mask that first bulge-structure is arranged the time; The stress intensity that solar base plate can bear can significantly be promoted; And when solar base plate receive the tension force face and the face that is stressed when all having first and second bulge-structure, more can reduce extraneous stress to negative effect that solar base plate produced.
In sum, solar base plate according to the present invention can bear bigger load and have excellent rupture strength compared to the solar base plate of convention.Therefore therefore, compared to prior art, solar base plate has the rupture strength of height according to the present invention, can resist impact and unlikely the breaking of external force.By this, can improve the yield of processing procedure fully, and avoid wherein causing unnecessary wastage of material because clash into improperly according to solar base plate of the present invention.
By the detailed description of above preferred embodiment, hope can be known description characteristic of the present invention and spirit more, and is not to come category of the present invention is limited with the above-mentioned preferred embodiment that is disclosed.On the contrary, its objective is that hope can contain in the category of claim of being arranged in of various changes and tool equality institute of the present invention desire application.Therefore, the category of the claim that the present invention applied for should be done the broadest explanation according to above-mentioned explanation, contains the arrangement of all possible change and tool equality to cause it.
Claims (13)
1. one kind in order to improve the solar base plate of rupture strength, includes:
One upper surface;
A plurality of first bulge-structures are formed at this upper surface; And
A plurality of first sunk areas, each first sunk area be formed at these first bulge-structures around;
Wherein, this solar base plate have the opposing high-tension around song.
2. solar base plate as claimed in claim 1, wherein this upper surface receives the tension force face for one of this solar base plate.
3. solar base plate as claimed in claim 1, wherein this solar base plate one amorphous substrate, a monocrystal substrate or a polycrystalline substrate.
4. solar base plate as claimed in claim 3, wherein this monocrystal substrate one monocrystalline silicon substrate.
5. solar base plate as claimed in claim 1, wherein these first bulge-structures can be a plurality of nano-pillar or a plurality of nanoneedle.
6. solar base plate as claimed in claim 5, wherein the spacing between each other top of two adjacent these nano-pillar or this nanoneedle is between tens nanometer to hundreds of nanometers.
7. solar base plate as claimed in claim 5, wherein these a plurality of nano-pillar or this a plurality of nanoneedle form by a chemical etching processing procedure.
8. solar base plate as claimed in claim 3, wherein this solar base plate is made by the one of which that is selected from the group that is made up of glass, silicon, germanium, carbon, aluminium, gallium nitride, GaAs, gallium phosphide, aluminium nitride, sapphire, spinelle, alundum (Al, carborundum, zinc oxide, magnesia, titanium dioxide lithium aluminium, titanium dioxide lithium gallium and four magnesia, two aluminium.
9. solar base plate as claimed in claim 1, wherein this solar base plate has more a lower surface, this lower surface has a plurality of second bulge-structures and a plurality of second sunk area, each second sunk area be formed at these second bulge-structures around.
10. solar base plate as claimed in claim 9, wherein this lower surface is the face that is stressed of this solar base plate.
11. solar base plate as claimed in claim 1, wherein this solar base plate can be a p type semiconductor layer, and a n type semiconductor layer can be formed on this solar base plate.
12. solar base plate as claimed in claim 1, wherein this solar base plate includes one first micrometer structure layer in addition, and this first micrometer structure layer is formed between this upper surface and these first bulge-structures.
13. solar base plate as claimed in claim 9, wherein this solar base plate includes one second micrometer structure layer in addition, and this second micrometer structure layer is formed between this lower surface and these second bulge-structures.
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| CN2011100458976A CN102651408A (en) | 2011-02-25 | 2011-02-25 | Solar energy base plate for improving fracture strength |
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| CN2011100458976A CN102651408A (en) | 2011-02-25 | 2011-02-25 | Solar energy base plate for improving fracture strength |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0933822A2 (en) * | 1998-01-20 | 1999-08-04 | Sharp Kabushiki Kaisha | Substrate for forming high-strenght thin semiconductor element and method for manufacturing high-strength thin semiconductor element |
| US20010029977A1 (en) * | 2000-01-21 | 2001-10-18 | Murata Manufacturing Co., Ltd. | Conductive paste and solar cell using the same |
| TW201007892A (en) * | 2008-08-06 | 2010-02-16 | Jer-Liang Yeh | Substrate with high fracture strength |
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2011
- 2011-02-25 CN CN2011100458976A patent/CN102651408A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0933822A2 (en) * | 1998-01-20 | 1999-08-04 | Sharp Kabushiki Kaisha | Substrate for forming high-strenght thin semiconductor element and method for manufacturing high-strength thin semiconductor element |
| US20010029977A1 (en) * | 2000-01-21 | 2001-10-18 | Murata Manufacturing Co., Ltd. | Conductive paste and solar cell using the same |
| TW201007892A (en) * | 2008-08-06 | 2010-02-16 | Jer-Liang Yeh | Substrate with high fracture strength |
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Application publication date: 20120829 |