CN102646795A - Organic electroluminescence device for reducing patterning graphene electrodes based on laser and manufacturing method therefor - Google Patents
Organic electroluminescence device for reducing patterning graphene electrodes based on laser and manufacturing method therefor Download PDFInfo
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Abstract
The invention belongs to the technical field of photoelectron and particularly relates to an organic electroluminescence device for reducing patterning graphene electrodes based on laser and a manufacturing method for the organic electroluminescence device. The organic electroluminescence device consists of a substrate, a gold electrode, the micron-dimension patterning graphene electrodes, an organic function layer and a cathode in sequence, wherein the gold electrode serves as an extraction electrode and is in a channel structure, the micron-dimension patterning graphene electrodes are lapped on the gold electrode at the two sides of each channel, and the micron-dimension patterning graphene electrodes are prepared by a laser write-through machining system capable of realizing laser point-by-point scanning. The obtained graphene electrodes are lower in the surface roughness and smoother in the surface, and therefore, the bottom-emission organic electroluminescence device prepared by the electrodes are higher in the degree of light-emitting homogeneity. The organic electroluminescence device and the manufacturing method break through the conventional concept for manufacturing the original large-area devices, the areas of the electrodes are reduced to the micron dimension, and patterns are led into the electrodes, so that the light-emitting area of the device is in a miniaturized pattern structure, thereby combining the organic electroluminescence device and the laser micro-nanomachining skillfully.
Description
Technical field
The invention belongs to the photoelectron technology field, be specifically related to a kind of organic electroluminescence device based on the laser reduction patterned Graphene electrodes and preparation method thereof.
Technical background
In recent years, the world increases the demand of information fast, and information industry is fast development in the world, and information technology has become the foundation stone that supports current economic activity and social life.Wherein, important ring---the information display technology as information technology has played key effect especially in the mankind's the knowledge acquisition and the improvement of living.
As Display Technique of new generation, that flat panel display (FPD) has concurrently is in light weight, volume is little, power consumption is little, outstanding advantage such as radiationless, has become the mainstream demand of people in the demonstration field.At present, FPD mainly comprises LCD (LCD), plasma display (PDP), Field Emission Display (FED), organic electroluminescence device (OLED) etc.Wherein, LCD relies on its good characteristic and ripe marketization production, on flat panel display market, has occupied than great share.Keep space of top prominence though LCD is temporary transient in showing market, but still have some shortcomings in essence: brightness is low, response speed is slow, non-active light source or the like, and this just impels the scientific research personnel that new display spare is developed and explored.
Breakthrough is constantly studied by the tight demand and the scientific circles that are accompanied by people; Flat panel display---organic electroluminescence device (the Organic Light Emitting Devices of a new generation; OLEDs) arise at the historic moment, enter into people's the visual field, the development in recent years impetus is powerful.It and traditional display in comparison have following advantage:
1) because device main body is an organic substance, thereby the material chosen scope is wide, can realize the solid-state demonstration of full color;
2) device light weight, thin thickness;
3), need not backlight from main light emission;
4) response speed fast (less than 1 μ s) can demonstrate ultrafast dynamic image and not have the ghost effect; Can improve image refreshing speed, effective when showing the Fast Dynamic image;
5) temperature range of using is wide, can under cryogenic conditions, carry out demonstration work;
6) can be prepared into flexible device;
7) production technology is simple relatively, is convenient to carry out large-area manufacturing processing.
For OLED, material is the main body of device, and material chosen is the key factor of maintaining the device operate as normal and influencing its performance with using.In OLED, selection of electrode materials always is the research focus of academia.Traditional electrode material ITO (indium tin oxide) relies on its outstanding conductivity and transparency one to be directly subordinate to the main flow electrode in the organic electroluminescence device, but is prone to cracked shortcoming because ITO itself is crooked, makes it limit the application of OLED in flexible device; In addition because phosphide element rare on the earth causes the OLED device cost to improve gradually.Therefore, be very necessary for ITO seeks a kind of novel alternative electrode.
This new material of Graphene is born in 2004, and its structure is a mono-layer graphite, has only the thickness of a carbon atom.Itself has many outstanding physicochemical properties: carrier mobility is high, and conductivity, thermal conductivity are good, flexible good, and transparency is high or the like.Making its genetic prerequisite that has possessed the flexible and transparent electrode, is the novel electrode material that is expected to substitute ITO.
Current, for the synthetic of grapheme material be applied in and constantly cause academic upsurge in the scientific research field.In the application of microscopic fields, the patterning of Graphene is novel research direction, and it belongs to technical field of micro and nano fabrication, and the method for patterning mainly comprises three kinds at present: mask method, trans-printing method and straight literary style.As a classification of straight literary style, the high heat that laser processing utilizes laser beam to focus on can be removed the oxygen in the graphene oxide, thereby restore Graphene electrodes; Because the high accuracy (can reach 1nm) of laser processing location can be processed into specific pattern with Graphene electrodes, thereby have been accomplished the preparation of patterned Graphene electrodes in reduction.
Summary of the invention
The object of the present invention is to provide a kind of organic electroluminescence device based on the laser reduction patterned Graphene electrodes.It is the micron dimension patterned Graphene electrodes that laser processing goes out to be put among the OLED be applied.
The present invention is specifically related to adopt patterned Graphene that laser micro-nano process technology prepares as electrode material, and its application is prepared into organic electroluminescence device.This idea has been broken the conventional thinking of broad area device in the past; The area of electrode is contracted to micron dimension; And introduce pattern therein, make that the luminous zone of device is the patterning of microization, thereby organic electro-optic device and the processing of laser micro-nano are combined dexterously.
The present invention uses spin coating technique, laser micro-nano process technology and vacuum vapor deposition techniques.At first gold evaporation and stays the raceway groove of a micron dimension as extraction electrode in the centre on the substrate of cleaning.Spin coating graphene oxide on gold electrode makes spin-on material that gold electrode and raceway groove are covered fully then, adopts vacuum drying oven to dry processing again.Adopt laser micro-nano system of processing that the graphene oxide film of spin coating is reduced processing afterwards, under the control of graphic package, prepare the Graphene electrodes material of patterning, electrode pattern comprises ladder shape and knot type.Utilize vacuum vapor deposition techniques at last, each organic function layer of vapor deposition and negative electrode on the Graphene electrodes of patterning, thus process organic electroluminescence device.
The laser micro-nano system of processing that adopts among the present invention is the laser direct-writing system of processing for point by point scanning, and this system comprises: light-source system (laser and light path regulating element), software control system, three-dimensional accurate mobile system and real-time monitoring system.
Three-dimensional accurate mobile system comprises sample stage and tilting mirror; The surface of the laser focusing sample to be processed (graphene oxide film) on sample stage that laser is sent through the light path regulating element; The precision of software control system control sample stage and tilting mirror moves; Make the laser spot of focusing in sample, carry out three-dimensional and move, thereby realize three-dimensional processing, and through real-time monitoring system monitoring machining state.
Described software control system is meant the three-dimensional point by point scanning control program that utilizes VB or C language, and this program is through the three-dimensional accurate mobile system of microcomputer may command.Three-dimensional accurate mobile system comprises piezoelectricity platform (109 among Fig. 1) and tilting mirror (among Fig. 1 104), and the control tilting mirror moves, and to be the may command laser spot in sample surfaces and sample interior mobile.Adopt the tilting mirror of the T8306 model of Beijing Century Nissan Co., Ltd can make laser at X, moving range is respectively 100 μ m on the Y direction, 100 μ m.The one dimension high technology ceramics piezoelectricity platform that adopts the German Physik Instrumente P622 of company model can moving range be 250 μ m on the Z direction as sample stage; Adopt the three-dimensional of the German Physik Instrumente P517.3 of company model to move the piezoelectricity platform as sample stage, at X, Y, moving range is respectively 100 μ m on the Z direction, 100 μ m, 20 μ m.The mobile accuracy of sample stage and tilting mirror all can reach 1nm.
The general lighting light source of real-time monitoring system (like 112 among Fig. 1) is positioned at piezoelectricity platform and sample top; Its visible light that sends gets into CCD camera (like 105 among Fig. 1) behind lens 111, sample 110, object lens 108, dielectric mirror 107, lens 106; In laser processing procedure, utilize material photocuring front and back different to the refractive index of light; Make the CCD imaging, directly monitor the processing imaging, the whole machining process process is monitored in real time.
In addition, the used sol evenning machine of spin coating technique provides for Microelectronics Institute of the Chinese Academy of Sciences, and film thickness and growth rate are controlled by Shanghai gloss vacuum instrument-film-thickness monitoring.For the observation of device luminescence phenomenon, give the device making alive through Keithley-2400 current-voltage tester earlier, adopt the Japanese Olympus fluorescence microscope to observe again, test condition is carried out in atmosphere at room temperature.
The present invention includes following content:
A kind of organic electroluminescence device based on the laser reduction patterned Graphene electrodes; Its structure comprises substrate successively, has the gold electrode of channel structure, overlaps micron dimension patterned Graphene electrodes (ladder shape, knot type), organic function layer and negative electrode on the gold electrode of raceway groove both sides; Shown in Fig. 2 (a), organic function layer comprise successively hole injection layer (20～40nm), hole transmission layer (15～40nm), luminescent layer double as electron transfer layer (40～60nm); The patterned Graphene electrodes of micron dimension adopts the preparation of laser micro-nano process technology; The thickness of gold electrode is 15～20nm, and the width of raceway groove is 50～120 μ m, and Graphene electrodes thickness is 15～30nm; Lateral length is 20～150 μ m, and longitudinal length is 40～300 μ m.
A kind of organic electroluminescence device of the present invention based on the laser reduction patterned Graphene electrodes; It is prepared by following method: consider that the prepared Graphene electrodes that goes out belongs to micron dimension; For the later stage is convenient to apply voltage to device; At first will be on the cover glass substrate that cleans up, the gold electrode that the growth of employing metal deposition system has channel structure is as extraction electrode, and the vacuum degree control of system is 1 * 10 in the growth course
-3～3 * 10
-3Pa stays the raceway groove that width is 50～120 μ m through the copper wire mask in the gold electrode centre position, the thickness of gold electrode is 15～20nm; Suspension with graphene oxide is spun on the gold electrode then; The raceway groove in gold electrode and centre position thereof is covered fully, and the spin coating rotating speed is 1000～3000rpm, and the spin coating time is 15～20s; The thickness of graphene oxide is 80～100nm; The substrate of the good graphene oxide of spin coating is put into vacuum drying oven, under 35～40 ℃ vacuum environment, dry, the time is 40～60min; Then adopt the laser direct-writing system of processing of point by point scanning that graphene oxide is reduced; On graphene oxide, prepare the Graphene electrodes of specific pattern in the time of reduction; And make the Graphene electrodes overlap joint on the gold electrode of raceway groove both sides, and the structure of Graphene electrodes and gold electrode is shown in Fig. 2 (b), and wherein Graphene electrodes thickness is 15～30nm; Lateral length is 20～150 μ m, and longitudinal length is 40～300 μ m; At last in multi-source organic molecule gas-phase deposition system, on Graphene electrodes, grow successively hole injection layer, hole transmission layer, luminescent layer double as electron transfer layer and negative electrode, thus prepare the organic electroluminescence device that patterned Graphene is made electrode.
The suspension of graphene oxide is to prepare through following method: stir 60～90min in the water-bath of mixture under 0 ℃ of condition with 1～2g flake graphite (average-size is 500～600 μ m), 1～2g sodium nitrate, 48～96mL concentrated sulfuric acid, 6～12g potassium permanganate, be warming up to 25～35 ℃ of continued again and stirred 2～3 hours; In mixed solution, in 30min, slowly add ultra-pure water 40～80mL then, add 100～200mL ultra-pure water and 5～10mL mass concentration afterwards more successively and be 30% hydrogen peroxide solution (H
2O
2); Sediment after then adopting supercentrifugal process with graphite oxidation extracts, and centrifugal rotational speed is 9000～12000r/s, and centrifugation time is 10～15min, adopts ultra-pure water that sediment is cleaned repeatedly again, make acidity weaken significantly, thereby the pH value approaches 7; To handle 5～10min near neutral sediment ultrasonic (80W) at last, thereby graphite will be peeled off the suspension that has obtained graphene oxide layer by layer.
The electrode of device (anode) is the Graphene of patterning, and it obtains through the laser direct-writing system of processing: the substrate that will have graphene oxide is fixed on the piezoelectricity platform; Software control system is sent instruction, the open and close of the break-make of control optical gate and then control laser beam; Software control system is again according to the three-dimensional accurate mobile system of the driven by program of the patterned Graphene electrodes micro-nano structure of working out; And then make laser spot point by point scanning in graphene oxide of focusing; The graphene oxide in laser scanning site is reduced to Graphene; Thereby, obtain the Graphene electrodes of patterning according to the micro-nano structure of the Graphene of design of program acquisition in advance.
The femtosecond laser condition that adopts is: optical maser wavelength 700～800nm, and repetition rate is 70～80MHz, and the energy of sub-thread pulse is 15～20nJ, and its pulsewidth is about 100～120fs.Selected object lens magnification is 100, and the aperture is 1.4.When the reduction Graphene, the laser power scope of selection is about 5～13mW, and it is between 500～2000 μ s that the single-point time for exposure is selected the interval.Patterned Graphene electrodes is ladder shape electrode or knot type electrode, and the area of ladder shape electrode is 4000～5000 μ m
2, the area of knot type electrode is 1000～2500 μ m
2, respectively like Fig. 5, shown in Figure 6, the area of electrode zone belongs to micron dimension.
The laser that is used to reduce can also adopt the pulse laser that has psec and nanosecond etc. high transient power except femtosecond laser, and continuous laser.The wave-length coverage of picosecond pulse laser device is 200～2600nm, and pulse width range is 10ps～800ps, and repetition frequency range is 1Hz～80MHz; The wave-length coverage of ps pulsed laser and ns pulsed laser system is 200～2000nm, and pulse width range is 10ns～900ns, and repetition frequency range is 1Hz～10KHz.
In the device the hole injection layer material be starlike explosive triphenylamine, star-like polyamines, polyaniline, phthalein mountain valley with clumps of trees and bamboo copper; Here be preferably 4; 4 ', 4 "-tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA) to be to improve the hole injectability.
Hole transport layer material is the aromatic amine compounds, according to the molecular structure type and combine topological structure to be divided into: in pairs the diamine compounds of coupling, star-like triphenyl amine compound, have the triphenyl amine compound of spiral shell type structure, triphenyl amine compound, three arylamine polymers, carbazole compound, organosilicon and the organometallic complex etc. of a type, typical in N; N '-diphenyl-N; N '-bis (1,1 '-biphenyl)-4,4 '-diamine (NPB), N; N '-Bis (3-methylphenyl)-N; N '-bis (phenyl)-benzidine (TPD), N, N '-Bis (naphthalene-1-yl)-N, N '-bis (phenyl)-2; 2 '-dimethylbenzidine (α-NPD) etc., be preferably NPB here.
Luminescent layer is main with the electroluminescent material of organic molecule, comprises the electroluminescent material of pure organic molecule blue emitting material, green light material, red light material and metal complex.Here be preferably green light luminescent material tris-(8-hydroxyquinoline) aluminum (Alq with carrier transmission characteristics
3), simultaneously also as electron transport material.
Negative electrode generally adopts the alloy of the lower metal of work functions such as lithium, magnesium, calcium, strontium, indium, aluminium or they and copper, gold, silver, and the compound negative electrode of perhaps being made up of a kind of thin insulating barrier (like LiF) and they is preferably compound negative electrode LiF/Al here.
The organic electroluminescence device that this programme provides has following innovative point and advantage:
Utilize laser processing technology reduction graphene oxide; Realize the patterning of reduction Graphene simultaneously; With area is that the Graphene electrodes of micron dimension is incorporated into and makes in the organic electroluminescence device that the light-emitting zone of device is concrete pattern; Pattern can be processed arbitrarily according to demand, thereby realizes the organic electroluminescence device of patterning.The grapheme material electric conductivity of preparing is good, and the surface is comparatively smooth, in device, has brought into play the electrode effect comparatively with flying colors.And the prepared luminous uniformity of device that goes out OLED is higher.
Description of drawings
Fig. 1: laser micro-nano processing light path sketch map
101 lasers, 102 optical gates, 103 attenuators, 104 tilting mirrors, 105CCD camera, 106 lens, 107 dielectric mirror, 108 object lens, 109 piezoelectricity platforms, 110 graphene oxide electrode and substrates, 111 lens, 112CCD camera.
Fig. 2: device architecture sketch map of the present invention
(a) device architecture figure: 1 cover glass substrate, 2 patterned Graphene electrodes (as anode), 3 hole injection layers, 4 hole transmission layers, the 5 luminescent layers electron transfer layer of holding concurrently, 6 negative electrodes.
(b) structure chart of device electrode part;
Fig. 3: the surface atom force microscope picture of patterned Graphene electrodes;
Fig. 4: AFM picture (a) Graphene of Graphene electrodes thickness and the atomic force shape appearance figure at substrate interface place, (b) thickness distribution curve in left figure oblique line institute partition territory;
Fig. 5: fluorescence microscope photo (a) the voltage 0V that the ladder shape electrode device is depressed in different electric in the embodiment of the invention 1, (b) voltage 9V, (c) voltage 10V, (d) voltage 11V;
Fig. 6: fluorescence microscope photo (a) the voltage 0V that knot type electrode device is depressed in different electric in the embodiment of the invention 1, (b) voltage 6V, (c) voltage 7V, (d) voltage 8V.
Embodiment
To provide concrete embodiment below and combine accompanying drawing, the technical scheme of the present invention of explaining, the enforcement below noting only is used for helping to understand, rather than limitation of the present invention.
Embodiment 1:
The preparation of the organic electroluminescence device of ladder shape patterned graphite alkene electrode.Device architecture is: Graphene (Graphene ,～20nm)/m-MTDATA (30nm)/NPB (20nm)/Alq
3(50nm)/and LiF (1nm)/Al (100nm), like Fig. 2 (a).Step is following:
(1) on the substrate that cleans up, adopt metal deposition system growth gold electrode as extraction electrode, the vacuum degree control of system is 1 * 10 in the growth course
-3Pa stays the raceway groove that a width is about 90 μ m through the copper wire mask in the middle of gold electrode, the thickness of gold electrode is 18nm, and electrode length is 17mm, and width is 5mm.
(2) graphene oxide is spun on the gold electrode, gold electrode and middle raceway groove thereof are covered fully, the spin coating rotating speed is 1000rpm, and the spin coating time is 18s, in 40 ℃ vacuum drying oven, slice, thin piece is dried processing, and the time is 60min.
(3) adopt laser that graphene oxide is reduced.As shown in Figure 1; Femtosecond pulse laser 101 output wavelengths are that 800nm, pulse duration are that 150fs, repetition rate are that the laser of 80MHz arrives tilting mirror 104 behind optical gate 102, attenuator 103 (decay to former light intensity 50%); Get into object lens 108 through dielectric mirror 107 again; Focus in the graphene oxide 110 on the substrate on the piezoelectricity platform 109, a blank position is arranged on the piezoelectricity platform, light can see through.The spot diameter that focuses in the graphene oxide film is about 400nm, and light spot energy is about 120uJ.The visible light that is sent by visible light source 112 focuses on through lens 106 in lens 111 focus on the graphene oxide film again, in CCD105, forms images.
By CAD programming ladder pattern model, save as DXF or stl file; Read with VB conversion software or Geomagic Studio software then, be processed into cloud data; The control program of writing with VB again reads cloud data, and then through the three-dimensional accurate mobile system of the serial port drive that links to each other with computer.All programs write all be by put line, again to face.Institute's coding begins from the left initial point in the program of involute, little broken line, and according to the line direction, the terminating point to the right side obtains complete structure.The substrate that will have graphene oxide places on the piezoelectricity platform; Above-mentioned femtosecond pulse focuses on graphene oxide inside through the light path among Fig. 1; Design program in advance according to the ladder shape pattern; Laser spot is in the inner point by point scanning of graphene oxide, and scanned site photoinduction graphene oxide is reduced to Graphene, obtains the Graphene micro-nano structure.
The laser power of selecting is 8mW; The single-point time for exposure is 1500 μ s; Process the ladder shape Graphene electrodes with the control of time point through graphic package; The way of contact of electrode that restores and gold electrode raceway groove is shown in Fig. 2 (b), and thickness of electrode is about 20nm, and the area of ladder shape electrode is about: 90 * 45 μ m
2
(4) at last in multi-source organic molecule gas-phase deposition system, the hole injection layer of on the ladder shape Graphene electrodes, growing successively, hole transmission layer, luminescent layer double as electron transfer layer, negative electrode.And adopt fluorescence microscope that the luminescence phenomenon of device is observed.
Fig. 3 is the surface topography of laser processing Graphene electrodes according to the invention.From figure, can see that the average surface roughness that processes Graphene is 5.45nm.
Fig. 4 is the AFM picture that is used to measure Graphene electrodes thickness according to the invention.From figure, can find out that the thickness of measuring is about 20nm.
The luminescent image that Fig. 5 observes through fluorescence microscope for the ladder shape electrode device of the present invention's preparation, the area of light-emitting zone is about 90 * 45 μ m
2, can find out that the luminous uniformity of device is higher.
Embodiment 2:
The preparation of the organic electroluminescence device of knot type patterned graphite alkene electrode.Device architecture is: Graphene (Graphene ,～20nm)/m-MTDATA (30nm)/NPB (20nm)/Alq
3(50nm)/and LiF (1nm)/Al (100nm), like Fig. 2 (a).
On the substrate that cleans up, adopt metal deposition system growth gold electrode as extraction electrode, the vacuum degree control of system is 1 * 10 in the growth course
-3Pa stays the raceway groove that a width is about 50 μ m through the copper wire mask in the middle of gold electrode, the thickness of gold electrode is 15nm; Then graphene oxide is spun on the gold electrode, gold electrode and middle raceway groove thereof are covered fully, the spin coating rotating speed is 1200rpm, and the spin coating time is 20s, in 40 ℃ vacuum drying oven, slice, thin piece is dried processing, and the time is 50min; Then adopt laser that graphene oxide is reduced; The course of processing is with described in the embodiment 1; The laser power of selecting is 6mW, and the single-point time for exposure is 2000 μ s, has also prepared the Graphene electrodes of knot type pattern simultaneously through control program; The way of contact of electrode that restores and gold electrode raceway groove is shown in Fig. 2 (b), and knot type electrode area is about: 50 * 25 μ m
2At last in multi-source organic molecule gas-phase deposition system, the hole injection layer of on knot type Graphene electrodes, growing successively, hole transmission layer, luminescent layer double as electron transfer layer, negative electrode.And adopt fluorescence microscope that the luminescence phenomenon of device is observed.
The luminescent image that Fig. 6 observes through fluorescence microscope for the knot type electrode device of the present invention's preparation, the area of light-emitting zone is about 50 * 25 μ m
2, device demonstrates illumination effect preferably equally.
Claims (5)
1. organic electroluminescence device based on the laser reduction patterned Graphene electrodes; It is characterized in that: successively by substrate, form as the gold electrode with channel structure of extraction electrode, micron dimension patterned Graphene electrodes, organic function layer and the negative electrode of overlap joint on the gold electrode of raceway groove both sides, organic function layer comprises hole injection layer, hole transmission layer, luminescent layer double as electron transfer layer successively; The patterned Graphene electrodes of micron dimension adopts the preparation of laser micro-nano process technology.
2. a kind of organic electroluminescence device based on the laser reduction patterned Graphene electrodes as claimed in claim 1 is characterized in that: the thickness of gold electrode is 15～20nm, and the width of raceway groove is 50～120 μ m; Patterned Graphene electrodes be shaped as ladder shape or knot type, its thickness is 15～30nm, lateral length is 20～150 μ m, longitudinal length is 40～300 μ m; The thickness of hole injection layer is that the thickness of 20～40nm, hole transmission layer is that the thickness of 15～40nm, luminescent layer double as electron transfer layer is 40～60nm.
3. a kind of organic electroluminescence device based on the laser reduction patterned Graphene electrodes as claimed in claim 2 is characterized in that: substrate is a cover glass; Hole injection layer is m-MTDATA; Hole transmission layer NPB; Luminescent layer is Alq
3, simultaneously also as electron transport material; Negative electrode is compound negative electrode LiF/Al.
4. the preparation method of the described a kind of organic electroluminescence device based on the laser reduction patterned Graphene electrodes of claim 3; It is characterized in that: at first on the cover glass substrate that cleans up; The gold electrode that the growth of employing metal deposition system has channel structure is as extraction electrode, and the vacuum degree control of system is 1 * 10 in the growth course
-3～3 * 10
-3Pa stays the raceway groove that width is 50～120 μ m through the copper wire mask in the gold electrode centre position, the thickness of gold electrode is 15～20nm; Suspension with graphene oxide is spun on the gold electrode then; The raceway groove in gold electrode and centre position thereof is covered fully, and the spin coating rotating speed is 1000～3000rpm, and the spin coating time is 15～20s; The thickness of graphene oxide is 80～100nm; The substrate of the good graphene oxide of spin coating is put into vacuum drying oven, under 35～40 ℃ vacuum environment, dry, the time is 40～60min; Then adopt the laser direct-writing system of processing of point by point scanning that graphene oxide is reduced; On graphene oxide, prepare the patterned Graphene electrodes of ladder shape or knot type in the time of reduction; And make the Graphene electrodes overlap joint on the gold electrode of raceway groove both sides; Graphene electrodes thickness is 15～30nm, and lateral length is 20～150 μ m, and longitudinal length is 40～300 μ m; At last in multi-source organic molecule gas-phase deposition system, on Graphene electrodes, grow successively hole injection layer, hole transmission layer, luminescent layer double as electron transfer layer and negative electrode, thus prepare the organic electroluminescence device that patterned Graphene is made electrode.
5. the preparation method of a kind of organic electroluminescence device based on the laser reduction patterned Graphene electrodes as claimed in claim 4; It is characterized in that: the preparation of the suspension of graphene oxide is to be to stir 60～90min in the water-bath of mixture under 0 ℃ of condition of 500～600 μ m flake graphites, 1～2g sodium nitrate, 48～96mL concentrated sulfuric acid, 6～12g potassium permanganate with 1～2g, average-size, is warming up to 25～35 ℃ of continued again and stirs 2～3 hours; In mixed solution, in 30min, slowly add ultra-pure water 40～80mL then, add 100～200mL ultra-pure water and 5～10mL mass concentration afterwards more successively and be 30% hydrogen peroxide solution; Sediment after then adopting supercentrifugal process with graphite oxidation extracts, and centrifugal rotational speed is 9000～12000r/s, and centrifugation time is 10～15min, adopts ultra-pure water that sediment is cleaned repeatedly again, make acidity weaken significantly, thereby the pH value approaches 7; At last will be near neutral sediment sonicated 5～10min, thus graphite peeled off layer by layer the suspension that has obtained graphene oxide.
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