CN102645807A - Liquid crystal display panel array substrate and manufacturing method thereof - Google Patents
Liquid crystal display panel array substrate and manufacturing method thereof Download PDFInfo
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- CN102645807A CN102645807A CN2012101033183A CN201210103318A CN102645807A CN 102645807 A CN102645807 A CN 102645807A CN 2012101033183 A CN2012101033183 A CN 2012101033183A CN 201210103318 A CN201210103318 A CN 201210103318A CN 102645807 A CN102645807 A CN 102645807A
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- metal line
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract
The invention relates to a metal wiring of a liquid crystal display panel array substrate and a manufacturing method of the liquid crystal display panel array substrate. The manufacturing method comprises the following steps of: firstly, continuously depositing a plurality of layers of metal films; secondly, etching the metal films to form the metal wiring to ensure that the metal wiring has an inclined side edge comprising an exposed surface; thirdly, treating the inclined side edge of the metal wiring by adopting plasmas of hydrogen; and finally, treating the inclined side edge by adopting plasmas of nitrogen so as to form an aluminum nitride film on the exposed surface of the metal wiring.
Description
[technical field]
The invention relates to a kind of liquid crystal display panel array substrate and preparation method thereof, especially, relate to a kind of liquid crystal display panel array substrate metal line and preparation method thereof.
[background technology]
Along with the development of photoelectric technology, digitized video or image device have become product common in the general daily life.In these digitized videos or image device, display is important man-machine communication interface.The user can read the running of information and then control device via display.
And thin film transistor (TFT) (TFT) is the driven unit that is applied in the display.As shown in Figure 1, generally speaking, thin film transistor (TFT) comprises assemblies such as grid (gate) 11, channel layer (channel) 10 and source electrode (source) 12 and drain electrode (drain) 13.What connect grid 11 and source electrode 12 input electrical signals then is respectively gate line 14 and data line 15.When carrying out gate line 14, data line 15 or other metal line; Such as during the making of common electrode wire 16; As shown in Figure 2, can form the multiple layer metal film through the physical vapor deposition (PVD) method at substrate 100, these metal lines possibly be to be deposited on other the rete certainly; These metal levels are generally molybdenum/aluminium/molybdenum lamination or molybdenum/aluminum metal lamination, even under particular process, can be the multilayer fine aluminium; Shown in Figure 2 here then is molybdenum/aluminium/molybdenum rhythmo structure, is respectively molybdenum 101, aluminium 102, the rhythmo structure of molybdenum 101.
As shown in Figure 3 then, utilize Wet-type etching or dry ecthing mode that the multiple layer metal layer is carried out Patternized technique again, form metal line with certain angle of inclination side, also be not limited to above-mentioned etching mode certainly.But, utilize the metal line of above-mentioned material made, before carrying out next processing procedure; Promptly cover down before the thin film, have part at the aluminum metal layer 102 of the side of metal line and expose in air, and because aluminum metal has very high metal active; As long as touch oxygen or water vapor in air or the equipment, be easy to form one deck aluminium oxide 20 on the surface of aluminium, and the non-constant of the electric conductivity of aluminium oxide 20; When conductor thin film or the lead that transmits electric signal when such metal line and other is connected, can form higher contact resistance, cause unsettled telecommunications to contact; Thereby the effect that influence shows, even cause scrapping of display panel.
As shown in Figure 4, traditional production method just carries out the deposition of next rete behind the intact metal wire of etching, whole metal wire is covered, and in processing procedure after this, carries out the contact of telecommunications through forming contact hole.And because aluminum metal layer 102 is as topmost electrical transfer layer in the whole metal line; Other metal level is then mainly born and is solved metal level and other layer sticking problem or the defect problem of aluminum metal in manufacturing process; But, because the existence of aluminium oxide 20 makes when metal line contacts with other conductor assembly; Contact resistance height very, in addition occur can not conducting situation.
Therefore, the contact resistance of reduction metal line becomes problem demanding prompt solution of manufacturing high quality display.
[summary of the invention]
The present invention provides a kind of liquid crystal display panel array substrate metal line, and it has lower contact resistance.
Liquid crystal display panel array substrate metal line provided by the invention; Be the multiple layer metal membrane structure; Wherein comprise an aluminum metal layer in the multiple layer metal layer at least and have an exposed surface, after the plasma treatment of this exposed surface through hydrogen and nitrogen, have an aluminium nitride film.
This metal line has the side of inclination in one embodiment of the invention, and this inclined lateral side comprises the exposed surface with aluminium nitride film.
In one embodiment of the invention, this metal line is the three-layer metal membrane structure.
In the another embodiment of the present invention, this metallic film material is followed successively by molybdenum aluminium molybdenum.
The metal line of a kind of liquid crystal display panel array substrate provided by the invention, wherein the thickness of molybdenum film is that 200 dusts are between 300 dusts.
The metal line of a kind of liquid crystal display panel array substrate provided by the invention, wherein the thickness of aluminum metal film is that 2500 dusts are between 3500 dusts.
The metal line of a kind of liquid crystal display panel array substrate provided by the invention, wherein inclined lateral side forms through etching.
The metal line of a kind of liquid crystal display panel array substrate provided by the invention, this aluminium nitride film forms through the nitrogen treatment surface of metal wiring.
The present invention more provides a kind of method for making of liquid crystal display panel array substrate metal line, after etching, adopt gas plasma to carry out side and handle, thereby the contact resistance of reduction metal line improves display quality.
The invention provides a kind of method for making of liquid crystal display panel array substrate metal line; Successive sedimentation multiple layer metal film; This multiple layer metal film of etching forms the metal line with inclined lateral side, on inclined lateral side, comprises an exposed surface, adopts the inclined lateral side of this metal line of plasma treatment of hydrogen; Adopt this inclined lateral side of plasma treatment of nitrogen then, on this exposed surface, form an aluminium nitride film.
In one embodiment of the invention, the metal line method for making of above-mentioned array base palte, this metallic film is three layers.
In one embodiment of the invention, the metal line method for making of above-mentioned array base palte, this metallic film material is followed successively by molybdenum aluminium molybdenum.
In one embodiment of the invention, the metal line method for making of above-mentioned array base palte, the thickness of this molybdenum film is that 200 dusts are between 300 dusts.
In one embodiment of the invention, the metal line method for making of above-mentioned array base palte, the thickness of this aluminum metal film is that 2500 dusts are between 3500 dusts.
In one embodiment of the invention, the metal line method for making of above-mentioned array base palte, this metallic film forms through the physical vapour deposition (PVD) mode.
In one embodiment of the invention, the metal line method for making of above-mentioned array base palte, this etching mode is dry ecthing.
In one embodiment of the invention, the metal line method for making of above-mentioned array base palte, this etching mode is inductively coupled plasma (ICP) etching.
In one embodiment of the invention, the metal line method for making of above-mentioned array base palte, this etching mode is a wet etching.
Wherein like the method for making of above-mentioned liquid crystal display panel array substrate metal line, this metal line can be gate line, data line, common electrode wire or other plain conductor.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphic elaborating as follows.
[description of drawings]
Fig. 1 is the prior art front elevation.
Fig. 2 makes process flow diagram for the prior art array base palte.
Fig. 3 makes process flow diagram for the prior art array base palte.
Fig. 4 makes process flow diagram for the prior art array base palte.
Fig. 5 implements front elevation for the present invention.
Fig. 6 is an embodiment of the invention structural drawing.
Fig. 7 A makes process flow diagram for the present invention
Fig. 7 B makes process flow diagram for the present invention
[embodiment]
For making the present invention more obviously understandable, the special act of hereinafter preferred embodiment is introduced in detail.The present invention's preferred embodiment all is equipped with corresponding shown by reference numeral.
First embodiment
Embodiment one, and please with reference to Fig. 5, Fig. 5 is a kind of liquid crystal display panel array substrate front elevation provided by the invention; Wherein at substrate (among the figure indicate), last cross direction profiles most bar sweep traces 210, with the sweep trace plurality of data lines 220 that is being interspersed; Sweep trace and data line be crisscross to have formed a plurality of picture elements; Wherein a plurality of thin film transistor (TFT)s are positioned at sweep trace 210 and data line 220 infalls, and wherein sweep trace 210 is connecting grid 251, and data line 220 is connecting source electrode 252; And grid 251 tops also have overlapping and be insulated the channel layer 253 that layer separates; Drain electrode 254 is connecting pixel electrode 256 through connecting hole 255, in addition, also has with sweep trace 210 parallel distributions and is positioned at the regional common electrode wire 230 of picture element.Therefore in the present invention metal line includes gate line 210, data line 220 and common electrode lines 230, is not limited to this certainly.In display panels, also be distributed with other metal line.
As shown in Figure 6, the present invention's metal line design is at first passed through physical vapor successive sedimentation metal multilayer film in substrate 200; When metal line is directly to be formed on the substrate, then substrate is a substrate, such as glass substrate; Plastic base, other flexible base plate etc.When metal line is formed on other rete, then substrate possibly be other rete, such as dielectric film.Be the three-layer metal membrane structure in the present embodiment; Wherein bottom one deck is a molybdenum film 301; The centre is an aluminum metal film 302, and topmost metal layer is a molybdenum film 301, is molybdenum aluminium molybdenum structure; To between 3500 dusts, and the thickness of two-layer molybdenum film is 200 dusts between 300 dusts to the thickness of the aluminum metal film among the present invention at 2500 dusts.
Wherein through covering photoresist, then through photoresistance is made public, then develop forms the photoresistance of reservation shape to this metal film, carries out etch process then after deposition; Realize that in etching etching mode can be dry ecthing, wet etching, also can be the inductively coupled plasma etching in the processing procedure of metal layer patternization.In dry etch process, retreat the metal line that method forms inclined lateral side through photoresistance; Specifically be when dry ecthing, contain oxygen in the etching gas, oxygen containing gas meeting and photoresistance reaction in etching process; Thereby partial reaction falls the photoresistance of fraction on the edge of; Thereby make photoresistance retreat to core, thereby expose the top of the vertical direction of metal level, thereby form a metal level with angle of inclination from the edge.And this inclined lateral side has an exposed surface 305.After having formed inclined lateral side metal line reservation shape and that have exposed surface 305; Because before carrying out next processing procedure, array base palte has shifted out etched cavity or in being transported to the process of next processing procedure, has touched air or water vapor; Again because the chemical characteristic of aluminum metal is more active; Be easy to form one deck aluminum oxide film, therefore, the processing procedure that the present invention further carries out a hydrogen treat with regard to above-mentioned metal line is to remove this aluminum oxide film 306; Through the plasma treatment metal line of hydrogen, can form hydroxyl after hydrogen and the aluminium oxide reaction, hydroxyl can extract in processing procedure; Thereby removed aluminium oxide; And then, carry out the processing procedure of the plasma of a nitrogen, make the surface of exposed surface 305 form the film of aluminium nitride 311; Thereby completely cut off aluminum metal film and oxygen or water vapor, made it that oxidation reaction no longer take place.And because aluminium nitride 311 materials itself possess conductive capability preferably, aluminium nitride 311 materials itself are similar to the material of Ohmic contact, therefore also do not influence electrical contact.So the metal film of metal line is a three-decker in the present embodiment, and formed the structure of inclined lateral side, on the exposed surface 305 of inclined lateral side, be coated with aluminium nitride film 311 with exposed surface 305.
Second embodiment
Another embodiment of the present invention provides a kind of method for making of liquid crystal display panel array substrate metal line, shown in Fig. 7 A to Fig. 7 B, at first; The successive sedimentation metal multilayer film is in substrate 200; If when forming metal line is directly to be formed on the substrate, then substrate 200 is a substrate, such as glass substrate; Plastic base, other flexible base plate etc.When if the metal line that forms is formed on other rete, then substrate possibly be other rete, such as dielectric film.Present embodiment is example with the substrate; The successive sedimentation metal multilayer film in the substrate successive sedimentation three-layered metal film, wherein bottom one deck is a molybdenum film 301, the centre is an aluminum metal film 302; Topmost metal layer is a molybdenum film 301; Be molybdenum aluminium molybdenum structure, between 3500 dusts, and the thickness of two-layer molybdenum film is 200 dusts between 300 dusts to the thickness of the aluminum metal film among the present invention at 2500 dusts.The depositional mode of metal film is a physical vapour deposition (PVD).
Wherein this metal film after deposition through covering photoresist (not illustrating among the figure); Then through photoresistance is made public; Then developing forms the photoresistance of reservation shape, carries out etch process then, and etching realizes the processing procedure of metal layer patternization; Etching mode can be dry ecthing, wet etching, also can be the inductively coupled plasma etching.In etching process, retreat the metal line that method forms inclined lateral side, and this inclined lateral side has an exposed surface 305 through photoresistance.After having formed inclined lateral side metal line reservation shape and that have exposed surface 305, because before carrying out next processing procedure, array base palte has shifted out etched cavity perhaps in being transported to the process of next processing procedure; Touch air or water vapor, because the chemical characteristic of aluminum metal is more active, be easy to form one deck aluminum oxide film 306 again; Therefore, the processing procedure that the invention provides a hydrogen treat is removed this aluminum oxide film 306, and is as shown in Figure 7; Through the plasma treatment metal line of hydrogen, hydrogen and aluminium oxide reaction back form hydroxyl, and hydroxyl can extract in processing procedure; Thereby removed aluminium oxide, and then, carried out the processing procedure of the plasma of a nitrogen; Make the surface of exposed surface 305 form the film of aluminium nitride; Thereby completely cut off aluminum metal film and oxygen or water vapor, make it that oxidation reaction no longer take place, and aluminium nitride 311 materials itself have possessed conductive capability preferably; Aluminium oxide 311 materials itself are similar to the material of Ohmic contact, therefore do not influence electrical contact.So the metal film of metal line is a three-decker in the present embodiment, and formed the structure of inclined lateral side, on the exposed surface 305 of inclined lateral side, be coated with aluminium nitride film 311 with exposed surface 305.
Carry out next processing procedure then; Cover next rete (not illustrating among the figure); Whole metal line is coated fully; Thereby further completely cut off exposed surface 305 and air or water vapor generation oxidation reaction, in the processing procedure of back, connected this metal line, reached the transmission action of electric signals through contact hole.
Those of ordinary skill in the art should be appreciated that it and still can make amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these are revised or replacement, do not make the spirit and the scope of the essence disengaging various embodiments of the present invention technical scheme of relevant art scheme.
Claims (16)
1. the metal line of a liquid crystal display panel array substrate; Be the multiple layer metal membrane structure; At least comprise an aluminum metal layer in the described multiple layer metal membrane structure and have an exposed surface, after the plasma treatment of described exposed surface through hydrogen and nitrogen, have an aluminium nitride film.
2. the metal line of a kind of liquid crystal display panel array substrate as claimed in claim 1, this metal line has the side of inclination, and described inclined lateral side comprises this exposed surface with aluminium nitride film.
3. the metal line of a kind of liquid crystal display panel array substrate as claimed in claim 1, this metal line is the three-layer metal membrane structure.
4. the metal line of a kind of liquid crystal display panel array substrate as claimed in claim 2, this metallic film material is followed successively by molybdenum aluminium molybdenum.
5. the hardware cloth of a kind of liquid crystal display panel array substrate as claimed in claim 3, the thickness of this molybdenum film is that 200 dusts are between 300 dusts.
6. the metal line of a kind of liquid crystal display panel array substrate as claimed in claim 3, the thickness of this aluminum metal film is that 2500 dusts are between 3500 dusts.
7. the metal line of a kind of liquid crystal display panel array substrate as claimed in claim 1, this inclined lateral side forms through etching.
8. the metal line of a kind of liquid crystal display panel array substrate as claimed in claim 1, this aluminium nitride film forms through the nitrogen treatment surface of metal wiring.
9. the metal line method for making of a liquid crystal display panel array substrate comprises the steps:
The successive sedimentation metal multilayer film;
This metal multilayer film of etching forms the metal line with inclined lateral side, comprises an exposed surface in described inclined lateral side;
Adopt the inclined lateral side of this metal line of plasma treatment of hydrogen;
And then this inclined lateral side of plasma treatment of employing nitrogen, form an aluminium nitride film at described exposed surface.
10. the metal line method for making of a kind of liquid crystal display panel array substrate as claimed in claim 9, this metal film is three layers.
11. the metal line method for making of a kind of liquid crystal display panel array substrate as claimed in claim 10, this metal film material is followed successively by molybdenum aluminium molybdenum.
12. the metal line method for making of a kind of liquid crystal display panel array substrate as claimed in claim 11, the thickness of this molybdenum film are that 200 dusts are between 300 dusts.
13. the metal line method for making of a kind of liquid crystal display panel array substrate as claimed in claim 11, the thickness of this aluminum metal film are that 2500 dusts are between 3500 dusts.
14. the metal line method for making of a kind of liquid crystal display panel array substrate as claimed in claim 9, this metallic film forms through the physical vapour deposition (PVD) mode.
15. the metal line method for making of a kind of liquid crystal display panel array substrate as claimed in claim 9, this etching mode are dry ecthing.
16. the metal line method for making of a kind of liquid crystal display panel array substrate as claimed in claim 9, this etching mode are wet etching.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210103318.3A CN102645807B (en) | 2012-04-10 | 2012-04-10 | Liquid crystal display panel array substrate and manufacture method thereof |
| TW101130283A TWI485499B (en) | 2012-04-10 | 2012-08-21 | Liquid crystal display panel array substrate and method of manufacturing the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210103318.3A CN102645807B (en) | 2012-04-10 | 2012-04-10 | Liquid crystal display panel array substrate and manufacture method thereof |
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| CN102645807A true CN102645807A (en) | 2012-08-22 |
| CN102645807B CN102645807B (en) | 2015-08-26 |
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| CN201210103318.3A Expired - Fee Related CN102645807B (en) | 2012-04-10 | 2012-04-10 | Liquid crystal display panel array substrate and manufacture method thereof |
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| TW (1) | TWI485499B (en) |
Cited By (9)
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| CN102881697A (en) * | 2012-09-06 | 2013-01-16 | 广州新视界光电科技有限公司 | Wiring structure capable of increasing yield rate of TFT (Thin Film Transistor) backplate |
| CN103553362A (en) * | 2013-10-15 | 2014-02-05 | 深圳市华星光电技术有限公司 | Method for fabricating light shield for cured sealant |
| CN106653772A (en) * | 2016-12-30 | 2017-05-10 | 惠科股份有限公司 | Display panel and preparation process |
| CN106653771A (en) * | 2016-12-30 | 2017-05-10 | 惠科股份有限公司 | Display panel and processing |
| CN107065237A (en) * | 2016-12-30 | 2017-08-18 | 惠科股份有限公司 | A kind of display panel processing procedure |
| CN107507868A (en) * | 2017-08-30 | 2017-12-22 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT) and preparation method thereof, array base palte and display device |
| CN108878448A (en) * | 2018-06-26 | 2018-11-23 | 武汉华星光电技术有限公司 | Display device and preparation method thereof |
| CN111384209A (en) * | 2019-12-12 | 2020-07-07 | 横店集团东磁股份有限公司 | Method for reducing pollution and improving conversion efficiency of ALD mode PERC battery |
| CN111679525A (en) * | 2020-06-22 | 2020-09-18 | 武汉华星光电技术有限公司 | Display panel and manufacturing method thereof |
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| CN102881697B (en) * | 2012-09-06 | 2015-01-21 | 广州新视界光电科技有限公司 | Wiring structure capable of increasing yield rate of TFT (Thin Film Transistor) backplate |
| CN102881697A (en) * | 2012-09-06 | 2013-01-16 | 广州新视界光电科技有限公司 | Wiring structure capable of increasing yield rate of TFT (Thin Film Transistor) backplate |
| CN103553362A (en) * | 2013-10-15 | 2014-02-05 | 深圳市华星光电技术有限公司 | Method for fabricating light shield for cured sealant |
| CN103553362B (en) * | 2013-10-15 | 2015-07-29 | 深圳市华星光电技术有限公司 | The making method of solidification frame glue light shield |
| US10818701B2 (en) | 2016-12-30 | 2020-10-27 | HKC Corporation Limited | Display panel and method of manufacturing the same |
| CN106653772A (en) * | 2016-12-30 | 2017-05-10 | 惠科股份有限公司 | Display panel and preparation process |
| CN106653771A (en) * | 2016-12-30 | 2017-05-10 | 惠科股份有限公司 | Display panel and processing |
| CN107065237A (en) * | 2016-12-30 | 2017-08-18 | 惠科股份有限公司 | A kind of display panel processing procedure |
| CN106653771B (en) * | 2016-12-30 | 2019-06-18 | 惠科股份有限公司 | A kind of display panel and processing procedure |
| CN106653772B (en) * | 2016-12-30 | 2019-10-01 | 惠科股份有限公司 | A kind of display panel and processing procedure |
| CN107507868A (en) * | 2017-08-30 | 2017-12-22 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT) and preparation method thereof, array base palte and display device |
| CN108878448A (en) * | 2018-06-26 | 2018-11-23 | 武汉华星光电技术有限公司 | Display device and preparation method thereof |
| CN111384209A (en) * | 2019-12-12 | 2020-07-07 | 横店集团东磁股份有限公司 | Method for reducing pollution and improving conversion efficiency of ALD mode PERC battery |
| CN111679525A (en) * | 2020-06-22 | 2020-09-18 | 武汉华星光电技术有限公司 | Display panel and manufacturing method thereof |
| CN111679525B (en) * | 2020-06-22 | 2021-06-01 | 武汉华星光电技术有限公司 | Display panel and manufacturing method thereof |
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| US11996415B2 (en) | 2020-06-22 | 2024-05-28 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Display panel and method of manufacturing thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201341923A (en) | 2013-10-16 |
| CN102645807B (en) | 2015-08-26 |
| TWI485499B (en) | 2015-05-21 |
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