CN102645783A - Manufacture method of color film base plate - Google Patents

Manufacture method of color film base plate Download PDF

Info

Publication number
CN102645783A
CN102645783A CN2011101290277A CN201110129027A CN102645783A CN 102645783 A CN102645783 A CN 102645783A CN 2011101290277 A CN2011101290277 A CN 2011101290277A CN 201110129027 A CN201110129027 A CN 201110129027A CN 102645783 A CN102645783 A CN 102645783A
Authority
CN
China
Prior art keywords
photoresist layer
photoresistance
black matrix
black
chromatic photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011101290277A
Other languages
Chinese (zh)
Other versions
CN102645783B (en
Inventor
林鸿涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Beijing BOE Display Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201110129027.7A priority Critical patent/CN102645783B/en
Priority claimed from CN201110129027.7A external-priority patent/CN102645783B/en
Publication of CN102645783A publication Critical patent/CN102645783A/en
Application granted granted Critical
Publication of CN102645783B publication Critical patent/CN102645783B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention discloses a manufacture method of a color film base plate. The method comprises the following steps that a color light resistance pattern and a black matrix pattern are formed on a substrate base plate and are synchronously formed. According to the manufacture method of the color film base plate provided by the invention, the color light resistance pattern and the black matrix pattern are formed on the substrate base plate and are synchronously formed, so the black matrix pattern and color light resistance pattern forming process can be completed through sharing a production line, and expensive production equipment does not need to be singly configured for the black matrix pattern, so the production cost of the color film base plate is reduced.

Description

The manufacturing approach of color membrane substrates
Technical field
The present invention relates to lcd technology, relate in particular to a kind of manufacturing approach of color membrane substrates.
Background technology
LCD is a flat-panel monitor commonly used at present, and wherein Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display is called for short TFT-LCD) is the main product in the LCD.
Color membrane substrates is the vitals of LCD.Fig. 1 is the structural representation of color membrane substrates in the prior art, and is as shown in Figure 1, and the typical structure of color membrane substrates comprises: underlay substrate 1 be formed at black matrix figure 2, red photoresistance figure 3, green photoresistance figure 4 and the blue photoresistance figure 5 on the underlay substrate 1.The manufacturing process that forms this color membrane substrates comprises: on underlay substrate 1, form black matrix figure 2 through composition technology, and on the underlay substrate 1 that forms black matrix figure 2, form red photoresistance figure 3, green photoresistance figure 4 and blue photoresistance figure 5 successively.Wherein, composition technology can comprise mask exposure and developing process.
In the prior art; In forming black matrix figure, red photoresistance figure, green photoresistance figure and blue photoresistance figure process; Forming each figure all needs an independent production line to accomplish; And each bar production line all needs expensive production equipments such as configuration exposure machine, mask, developing machine separately, thereby causes the production cost of color membrane substrates too high.
Summary of the invention
The present invention provides a kind of manufacturing approach of color membrane substrates, in order to reduce the production cost of color membrane substrates.
For realizing above-mentioned purpose, the invention provides a kind of manufacturing approach of color membrane substrates, comprising:
On underlay substrate, form chromatic photoresist figure and black matrix figure, said chromatic photoresist figure and said black matrix diagram formed just as the step.
Further, saidly on underlay substrate, form the chromatic photoresist figure and black matrix figure comprises:
On said underlay substrate, form chromatic photoresist layer and black photoresist layer continuously;
Forming said chromatic photoresist figure on the said underlay substrate and be positioned at the black matrix figure on the said chromatic photoresist figure through composition technology.
Further, saidly comprise with the black matrix figure that is positioned on the said chromatic photoresist figure forming said chromatic photoresist figure on the said underlay substrate through composition technology:
Adopt mask that said chromatic photoresist layer and said black photoresist layer are made public; Make said chromatic photoresist layer and said black photoresist layer form complete exposure area, partial exposure area and unexposed area; Said unexposed area is corresponding to the black matrix figure on the marginal position of said chromatic photoresist figure and the marginal position that is positioned at said chromatic photoresist figure; Said partial exposure area is corresponding to the centre position of said chromatic photoresist figure, and said complete exposure area is corresponding to the zone outside the said chromatic photoresist figure;
Remove the photoresist layer that has made public in complete exposure area and the partial exposure area through developing process, form said chromatic photoresist figure and be positioned at the black matrix figure on the said chromatic photoresist figure.
Further, the material of the material of said chromatic photoresist layer and said black photoresist layer is the positivity photoresistance.
Further, said mask is arranged at the top of the positive side of said underlay substrate.
Further, saidly comprise with the black matrix figure that is positioned on the said chromatic photoresist figure forming said chromatic photoresist figure on the said underlay substrate through composition technology:
Adopt mask that said chromatic photoresist layer and said black photoresist layer are made public; Make said chromatic photoresist layer and said black photoresist layer form complete exposure area, partial exposure area and unexposed area; Said complete exposure area is corresponding to the black matrix figure on the marginal position of said chromatic photoresist figure and the marginal position that is positioned at said chromatic photoresist figure; Said partial exposure area is corresponding to the centre position of said chromatic photoresist figure, and said unexposed area is corresponding to the zone outside the said chromatic photoresist figure;
Remove unexposed photoresist layer in unexposed area and the partial exposure area through developing process, form said chromatic photoresist figure and said black matrix figure.
Further, the material of the material of said chromatic photoresist layer and said black photoresist layer is the negativity photoresistance.
Further, said mask is arranged at the top of the said underlay substrate back side one side.
Further, said method also comprises:
Said chromatic photoresist figure and the black matrix figure that is positioned on the said chromatic photoresist figure are cured processing.
Further, said chromatic photoresist figure comprises that red light resistance figure, green photoresistance figure, blue photoresistance figure are one of at least.
The present invention has following beneficial effect:
In the manufacturing approach of color membrane substrates provided by the invention; On underlay substrate, form chromatic photoresist figure and black matrix figure; Wherein chromatic photoresist figure and black matrix diagram formed just as the step; Therefore the process that forms black matrix figure and chromatic photoresist figure can be accomplished by shared production line, need not to black matrix figure disposes expensive production equipment separately, thereby has reduced the production cost of color membrane substrates.
Description of drawings
Fig. 1 is the structural representation of color membrane substrates in the prior art;
The process flow diagram of the manufacturing approach of a kind of color membrane substrates that Fig. 2 provides for the embodiment of the invention two;
The process flow diagram of the manufacturing approach of a kind of color membrane substrates that Fig. 3 provides for the embodiment of the invention three;
Fig. 4 a is the synoptic diagram that forms red photoresist layer and black photoresist layer among the embodiment three;
The synoptic diagram of Fig. 4 b for red photoresist layer and black photoresist layer being made public among the embodiment three;
Fig. 4 c is the synoptic diagram that forms red photoresistance figure and black matrix figure among the embodiment three;
Fig. 4 d is the synoptic diagram that forms green photoresistance figure and black matrix figure among the embodiment three;
Fig. 4 e is the synoptic diagram that forms blue photoresistance figure and black matrix figure among the embodiment three;
The process flow diagram of the manufacturing approach of a kind of color membrane substrates that Fig. 5 provides for the embodiment of the invention four;
The process flow diagram of the manufacturing approach of a kind of color membrane substrates that Fig. 6 provides for the embodiment of the invention five;
Fig. 7 a is the synoptic diagram that forms red photoresist layer and black photoresist layer among the embodiment five;
The synoptic diagram of Fig. 7 b for red photoresist layer and black photoresist layer being made public among the embodiment five;
Fig. 7 c is the synoptic diagram that forms red photoresistance figure and black matrix figure among the embodiment five;
Fig. 7 d is the synoptic diagram that forms green photoresistance figure and black matrix figure among the embodiment five;
Fig. 7 e is the synoptic diagram that forms blue photoresistance figure and black matrix figure among the embodiment five.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, be described in detail below in conjunction with the manufacturing approach of accompanying drawing to color membrane substrates provided by the invention.
The embodiment of the invention one provides a kind of manufacturing approach of color membrane substrates, and this method comprises: on underlay substrate, form chromatic photoresist figure and black matrix figure, chromatic photoresist figure and black matrix diagram formed just as the step.
In the present embodiment; Specifically can comprise at formation chromatic photoresist figure and black matrix figure on the underlay substrate: on underlay substrate, form chromatic photoresist layer and black photoresist layer continuously, and forming the chromatic photoresist figure on the underlay substrate and be positioned at the black matrix figure on the chromatic photoresist figure through composition technology.Composition technology can comprise exposure and developing process.In the present embodiment; Chromatic photoresist figure and black matrix diagram formed just as the step; Promptly in the process that forms the chromatic photoresist figure, form black matrix figure, the process that therefore forms black matrix figure and chromatic photoresist figure can be accomplished by shared production line, need not to dispose production equipment separately for black matrix figure.
In the present embodiment, the chromatic photoresist figure can comprise red photoresistance figure, green photoresistance figure or blue photoresistance figure.Therefore; Can repeat and above-mentionedly form chromatic photoresist figure and the step that is positioned at the black matrix figure on the chromatic photoresist figure on the underlay substrate, form red photoresistance figure, green photoresistance figure, blue photoresistance figure and black matrix figure on the underlay substrate to be implemented in.Wherein, black matrix figure comprises the black matrix figure that is positioned on the red photoresistance figure, is positioned at the black matrix figure on the green photoresistance figure and is positioned at the black matrix figure on the blue photoresistance figure.
In the manufacturing approach of the color membrane substrates that present embodiment provides; On underlay substrate, form chromatic photoresist figure and black matrix figure; Wherein chromatic photoresist figure and black matrix diagram formed just as the step; Therefore the process that forms black matrix figure and chromatic photoresist figure can be accomplished by shared production line, need not to black matrix figure disposes expensive production equipment separately, thereby has reduced the production cost of color membrane substrates.
The process flow diagram of the manufacturing approach of a kind of color membrane substrates that Fig. 2 provides for the embodiment of the invention two, as shown in Figure 2, this method comprises:
Step 201, on underlay substrate, form continuously chromatic photoresist layer and black photoresist layer.
Wherein, the black photoresist layer is positioned on the chromatic photoresist layer.Preferably, can adopt two shower nozzle (Nozzle) glue spreaders on underlay substrate, to form chromatic photoresist layer and black photoresist layer continuously, need not to adopt two glue spreaders.
In this step, on underlay substrate, form after chromatic photoresist layer and the black photoresist layer continuously, further can also comprise: chromatic photoresist layer and black photoresist layer are carried out operations such as vacuum drying, precuring and cooling.Particularly, on underlay substrate, after the formation chromatic photoresist layer this chromatic photoresist layer is carried out operations such as vacuum drying, precuring and cooling; Then on the chromatic photoresist layer, form the black photoresist layer, and this black photoresist layer is carried out operations such as vacuum drying, precuring and cooling.
Step 202, employing mask are made public to chromatic photoresist layer and black photoresist layer; Make chromatic photoresist layer and black photoresist layer form complete exposure area, partial exposure area and unexposed area; Said unexposed area is corresponding to the black matrix figure on the marginal position of said chromatic photoresist figure and the marginal position that is positioned at said chromatic photoresist figure; Said partial exposure area is corresponding to the centre position of said chromatic photoresist figure, and said complete exposure area is corresponding to the zone outside the said chromatic photoresist figure.
In the present embodiment, the material of the material of said chromatic photoresist layer and said black photoresist layer is the positivity photoresistance.Said mask is arranged at the top of the positive side of said underlay substrate, and particularly, this mask can comprise red photoresistance mask, green photoresistance mask or blue photoresistance mask.The various mask that adopt among the present invention all can be shadow tone (Halftone) mask.
Step 203, the photoresist layer through having made public in developing process removal complete exposure area and the partial exposure area form the chromatic photoresist figure and are positioned at the black matrix figure on the chromatic photoresist figure.
Further, after step 203, can also comprise: chromatic photoresist figure and the black matrix figure that is positioned on the chromatic photoresist figure are cured processing.Wherein, cured can be handled for baking-curing.
In the present embodiment, the chromatic photoresist layer can be red light resistance layer, green photoresist layer or blue photoresist layer, and then correspondingly, the chromatic photoresist figure can hinder figure, green photoresistance figure or blue photoresistance figure for red light.Therefore, above-mentioned steps 201 be can repeat, red photoresistance figure, green photoresistance figure, blue photoresistance figure and black matrix figure formed on the underlay substrate to be implemented in to step 203.Wherein, black matrix figure comprises the black matrix figure that is positioned on the red photoresistance figure, is positioned at the black matrix figure on the green photoresistance figure and is positioned at the black matrix figure on the blue photoresistance figure.
In the manufacturing approach of the color membrane substrates that present embodiment provides; On underlay substrate, form chromatic photoresist layer and black photoresist layer continuously; Adopt mask that chromatic photoresist layer and black photoresist layer are made public; Make chromatic photoresist layer and black photoresist layer form complete exposure area, partial exposure area and unexposed area, remove the photoresist layer that has made public in complete exposure area and the partial exposure area, form the chromatic photoresist figure and be positioned at the black matrix figure on the chromatic photoresist figure through developing process; Wherein chromatic photoresist figure and black matrix diagram formed just as the step; Therefore the process that forms black matrix figure and chromatic photoresist figure can be accomplished by shared production line, need not to black matrix figure disposes expensive production equipment separately, thereby has reduced the production cost of color membrane substrates.When forming the chromatic photoresist figure, form black matrix figure, reduced the processing step of the black matrix figure of independent formation, thereby shortened the production cycle, improved production efficiency.Need not to make black matrix mask for forming black matrix figure separately, thereby saved the mask manufacturing cost.And present embodiment has also been saved the developer solution that adopts when the matrix figure is deceived in independent formation, thereby has further practiced thrift the production material, has reduced production cost.Can adopt two Nozzle glue spreaders on underlay substrate, to form chromatic photoresist layer and black photoresist layer continuously, need not to adopt two glue spreaders, thereby further reduced production cost.
Be described in detail through the technical scheme in three pairs of the foregoing descriptions two of embodiment below.The process flow diagram of the manufacturing approach of a kind of color membrane substrates that Fig. 3 provides for the embodiment of the invention three, as shown in Figure 3, this method comprises:
Step 301, on underlay substrate, form continuously red photoresist layer and black photoresist layer.
Fig. 4 a is the synoptic diagram that forms red photoresist layer and black photoresist layer among the embodiment three, shown in Fig. 4 a, on underlay substrate 11, forms red photoresist layer 12 and black photoresist layer 13 continuously.Black photoresist layer 13 is positioned on the red photoresist layer 12.Can adopt method of spin coating particularly, rubbing method, ink injection method or photoresist film attach method and on underlay substrate 11, form red photoresist layer 12 and black photoresist layer 13 without spin.
Step 302, employing mask are made public to red photoresist layer and black photoresist layer; Make red photoresist layer and black photoresist layer form complete exposure area, partial exposure area and unexposed area; Unexposed area is corresponding to the black matrix figure on the marginal position of red photoresistance figure and the marginal position that is positioned at red photoresistance figure; Partial exposure area is corresponding to the centre position of red photoresistance figure, and complete exposure area is corresponding to the zone outside the red photoresistance figure.
The synoptic diagram of Fig. 4 b for red photoresist layer and black photoresist layer being made public among the embodiment three; Shown in Fig. 4 b; Red photoresistance mask 14 is positioned over the top of underlay substrate 11 positive sides; Be the top of red photoresist layer 12 and black photoresist layer 13, wherein, red photoresistance mask 14 comprises light tight regional 141, part transmission region 142 and transmission region 143 fully.Adopt UV light (among the figure shown in the arrow) that mask is shone; With realization red photoresist layer 12 is made public with black photoresist layer 13; Form complete exposure area, partial exposure area and unexposed area; Light tight regional 141 are used to form unexposed area, and part transmission region 142 is used to form partial exposure area, and transmission region 143 is used to form complete exposure area fully.Need to prove: the dotted line among Fig. 3 b is in order to distinguish partial exposure area and unexposed area.Unexposed area 15 is corresponding to the black matrix figure on the marginal position of red photoresistance figure and the marginal position that is positioned at red photoresistance figure; Partial exposure area is corresponding to the centre position of red photoresistance figure, and complete exposure area 16 is corresponding to the zone outside the red photoresistance figure.Wherein, partial exposure area comprises photoresist layer and the unexposed photoresist layer 172 that has made public, and wherein, the photoresist layer that has made public comprises black photoresist layer 1711 that has made public and the red photoresist layer 1712 of the part of having made public.
Step 303, the photoresist layer through having made public in developing process removal complete exposure area and the partial exposure area form red photoresistance figure and are positioned at the black matrix figure on the red photoresistance figure.
Fig. 4 c is the synoptic diagram that forms red photoresistance figure and black matrix figure among the embodiment three; Shown in Fig. 4 c; Remove the photoresist layer that has made public in complete exposure area 16 and the partial exposure area through developing process, form red photoresistance figure 18 and be positioned at the black matrix figure 19 on the red photoresistance figure.The photoresist layer that has made public in the partial exposure area comprises the red photoresist layer of the part of having made public, is in order to remove the black photoresist layer on the centre position that is positioned at red photoresistance figure fully through developing process, to avoid leaving over part black photoresist layer.Wherein, red photoresistance graphics package is drawn together the centre position of the marginal position and the red photoresistance figure of red photoresistance figure.
Step 304, red photoresistance figure and the black matrix figure that is positioned on the red photoresistance figure are cured processing.
Step 305, on the underlay substrate of completing steps 304, form continuously green photoresist layer and black photoresist layer.
On underlay substrate, be coated with green photoresist layer and black photoresist layer continuously.Green photoresist layer and black photoresist layer all cover the entire substrate substrate, and the black photoresist layer is positioned on the green photoresist layer.Can adopt method of spin coating particularly, rubbing method, ink injection method or photoresist film attach method and on underlay substrate, form green photoresist layer and black photoresist layer without spin.
Step 306, employing mask are made public to green photoresist layer and black photoresist layer; Make green photoresist layer and black photoresist layer form complete exposure area, partial exposure area and unexposed area; Unexposed area is corresponding to the black matrix figure on the marginal position of green photoresistance figure and the marginal position that is positioned at green photoresistance figure; Partial exposure area is corresponding to the centre position of green photoresistance figure, and complete exposure area is corresponding to the zone outside the green photoresistance figure.
In this step, green photoresistance mask is positioned over the top of the positive side of underlay substrate, the top of promptly green photoresist layer and black photoresist layer, wherein, green photoresistance mask comprises light tight zone, part transmission region and complete transmission region.Adopt UV light that mask is shone; With realization green photoresist layer and black photoresist layer are made public; Form complete exposure area, partial exposure area and unexposed area; Light tight zone is used to form unexposed area, and the part transmission region is used to form partial exposure area, and transmission region is used to form complete exposure area fully.The synoptic diagram and Fig. 3 b that in this step green photoresist layer and black photoresist layer are made public are similar, no longer specifically draw here.Need to prove: owing in the step 304 red photoresistance figure and the black matrix figure that is positioned on the red photoresistance figure have been carried out cured; Therefore when the complete transmission region through green photoresistance mask made public to being positioned at green photoresist layer and black photoresist layer on the red light resistance figure, red photoresistance figure and the black matrix figure that is positioned on the red photoresistance figure can not made public.
Step 307, the photoresist layer through having made public in developing process removal complete exposure area and the partial exposure area form green photoresistance figure and are positioned at the black matrix figure on the green photoresistance figure.
Fig. 4 d is the synoptic diagram that forms green photoresistance figure and black matrix figure among the embodiment three; Shown in Fig. 4 d; Remove the photoresist layer that has made public in complete exposure area and the partial exposure area through developing process, form green photoresistance figure 20 and be positioned at the black matrix figure 21 on the green photoresistance figure.The photoresist layer that has made public in the partial exposure area comprises the green photoresist layer of the part of having made public, is in order to remove the black photoresist layer on the centre position that is positioned at green photoresistance figure fully through developing process, to avoid leaving over part black photoresist layer.Wherein, green photoresistance graphics package is drawn together the centre position of the marginal position and the green photoresistance figure of green photoresistance figure.Need to prove:, therefore in this step, can not be removed because red photoresistance figure is not made public with the black matrix figure that is positioned on the red photoresistance figure.
Step 308, green photoresistance figure and the black matrix figure that is positioned on the green photoresistance figure are cured processing.
Step 309, on the underlay substrate of completing steps 308, form continuously blue photoresist layer and black photoresist layer.
On underlay substrate, be coated with blue photoresist layer and black photoresist layer continuously.Blue photoresist layer and black photoresist layer all cover the entire substrate substrate, and the black photoresist layer is positioned on the blue photoresist layer.Can adopt method of spin coating particularly, rubbing method, ink injection method or photoresist film attach method and on underlay substrate, form blue photoresist layer and black photoresist layer without spin.
Step 310, employing mask are made public to blue photoresist layer and black photoresist layer; Make blue photoresist layer and black photoresist layer form complete exposure area, partial exposure area and unexposed area; Unexposed area is corresponding to the black matrix figure on the marginal position of blue photoresistance figure and the marginal position that is positioned at blue photoresistance figure; Partial exposure area is corresponding to the centre position of blue photoresistance figure, and complete exposure area is corresponding to the zone outside the blue photoresistance figure.
In this step, blue photoresistance mask is positioned over the top of the positive side of underlay substrate, the top of promptly blue photoresist layer and black photoresist layer, wherein, blue photoresistance mask comprises light tight zone, part transmission region and complete transmission region.Adopt UV light that mask is shone; With realization blue photoresist layer and black photoresist layer are made public; Form complete exposure area, partial exposure area and unexposed area; Light tight zone is used to form unexposed area, and the part transmission region is used to form partial exposure area, and transmission region is used to form complete exposure area fully.The synoptic diagram and Fig. 3 b that in this step blue photoresist layer and black photoresist layer are made public are similar, no longer specifically draw here.Need to prove: owing to also green photoresistance figure and the black matrix figure that is positioned on the green photoresistance figure have been carried out cured in the step 308; Therefore when the complete transmission region through blue photoresistance mask hinders green photoresist layer and black photoresist layer on figure and the green photoresistance figure and makes public being positioned at red light, red photoresistance figure, be positioned at black matrix figure, the green photoresistance figure on the red photoresistance figure and the black matrix figure that is positioned on the green photoresistance figure all can not made public.
Step 311, the photoresist layer through having made public in developing process removal complete exposure area and the partial exposure area form blue photoresistance figure and are positioned at the black matrix figure on the blue photoresistance figure.
Fig. 4 e is the synoptic diagram that forms blue photoresistance figure and black matrix figure among the embodiment three; Shown in Fig. 4 e; Remove the photoresist layer that has made public in complete exposure area and the partial exposure area through developing process, form blue photoresistance figure 22 and be positioned at the black matrix figure 23 on the blue photoresistance figure.The photoresist layer that has made public in the partial exposure area comprises the blue photoresist layer of the part of having made public, is in order to remove the black photoresist layer on the centre position that is positioned at blue photoresistance figure fully through developing process, to avoid leaving over part black photoresist layer.Wherein, blue photoresistance graphics package is drawn together the centre position of the marginal position and the blue photoresistance figure of blue photoresistance figure.Need to prove:, therefore in this step, can not be removed owing to red photoresistance figure, be positioned at black matrix figure, the green photoresistance figure on the red photoresistance figure and the black matrix figure that is positioned on the green photoresistance figure is not made public.
Further, if color membrane substrates also comprises the black matrix figure in the periphery that is positioned at the underlay substrate marginal position, then in the process that forms the chromatic photoresist figure, also form peripheral black matrix figure.Particularly, can in the process that forms red photoresistance figure, green photoresistance figure or blue photoresistance figure, form peripheral black matrix figure, in the process that forms red photoresistance figure, form peripheral black matrix figure in the present embodiment.In the step 302 unexposed area also corresponding to the red photoresistance figure in periphery be positioned at the black matrix figure on the peripheral red photoresistance figure; Then in the step 303; Remove the photoresist layer that has made public in complete exposure area and the partial exposure area through developing process, also form peripheral red photoresistance figure 24 and be positioned at the black matrix figure 25 on the peripheral red photoresistance figure.And in step 304, also peripheral red light resistance figure 24 is cured processing with the black matrix figure 25 that is positioned on the peripheral red figure.In the process of green photoresistance figure of follow-up formation and blue photoresistance figure, because all having carried out overcuring with black matrix figure 25, handles in peripheral red photoresistance figure 24, therefore can not made public, in developing process, can not be removed yet.
Further, can also form common electrode layer on the underlay substrate, this common electrode layer is positioned on red photoresistance figure, green photoresistance figure, blue photoresistance figure and the black matrix figure.Specifically do not draw among the figure.
In the present embodiment, the material of red photoresist layer, green photoresist layer, blue photoresist layer and black matrix layer is the positivity photoresistance.
Need to prove: the formation of red photoresistance figure, green photoresistance figure and blue photoresistance figure order can change as required in the present embodiment, only with a kind of formation order as an example, is not the restriction to technical scheme of the present invention in the present embodiment.
The process flow diagram of the manufacturing approach of a kind of color membrane substrates that Fig. 5 provides for the embodiment of the invention four, as shown in Figure 5, this method comprises:
Step 501, on underlay substrate, form continuously chromatic photoresist layer and black photoresist layer.
Wherein, the black photoresist layer is positioned on the chromatic photoresist layer.Preferably, can adopt two shower nozzle (Nozzle) glue spreaders on underlay substrate, to form chromatic photoresist layer and black photoresist layer continuously, need not to adopt two glue spreaders.
In this step, on underlay substrate, form after chromatic photoresist layer and the black photoresist layer continuously, further can also comprise: chromatic photoresist layer and black photoresist layer are carried out operations such as vacuum drying, precuring and cooling.Particularly, on underlay substrate, after the formation chromatic photoresist layer this chromatic photoresist layer is carried out operations such as vacuum drying, precuring and cooling; Then on the chromatic photoresist layer, form the black photoresist layer, and this black photoresist layer is carried out operations such as vacuum drying, precuring and cooling.
Step 502, employing mask are made public to chromatic photoresist layer and black photoresist layer; Make chromatic photoresist layer and black photoresist layer form complete exposure area, partial exposure area and unexposed area; Said complete exposure area is corresponding to the black matrix figure on the marginal position of said chromatic photoresist figure and the marginal position that is positioned at said chromatic photoresist figure; Said partial exposure area is corresponding to the centre position of said chromatic photoresist figure, and said unexposed area is corresponding to the zone outside the said chromatic photoresist figure.
In the present embodiment, the material of the material of said chromatic photoresist layer and said black photoresist layer is the negativity photoresistance.Said mask is arranged at the top of the said underlay substrate back side one side, and particularly, this mask can comprise red photoresistance mask, green photoresistance mask or blue photoresistance mask.
Step 503, remove unexposed photoresist layer in unexposed area and the partial exposure area, form said chromatic photoresist figure and said black matrix figure through developing process.
In the present embodiment, the chromatic photoresist layer can be red light resistance layer, green photoresist layer or blue photoresist layer, and then correspondingly, the chromatic photoresist figure can hinder figure, green photoresistance figure or blue photoresistance figure for red light.Therefore, above-mentioned steps 501 be can repeat, red photoresistance figure, green photoresistance figure, blue photoresistance figure and black matrix figure formed on the underlay substrate to be implemented in to step 503.Wherein, black matrix figure comprises the black matrix figure that is positioned on the red photoresistance figure, is positioned at the black matrix figure on the green photoresistance figure and is positioned at the black matrix figure on the blue photoresistance figure.
The difference of present embodiment and the foregoing description two is: what present embodiment adopted is back of the body exposure technique.
Further, after step 503, can also comprise: chromatic photoresist figure and the black matrix figure that is positioned on the chromatic photoresist figure are cured processing.Wherein, cured can be handled for baking-curing.
In the present embodiment, the chromatic photoresist layer can be red light resistance layer, green photoresist layer or blue photoresist layer, and then correspondingly, the chromatic photoresist figure can hinder figure, green photoresistance figure or blue photoresistance figure for red light.Therefore, above-mentioned steps 501 be can repeat, red photoresistance figure, green photoresistance figure, blue photoresistance figure and black matrix figure formed on the underlay substrate to be implemented in to step 503.Wherein, black matrix figure comprises the black matrix figure that is positioned on the red photoresistance figure, is positioned at the black matrix figure on the green photoresistance figure and is positioned at the black matrix figure on the blue photoresistance figure.
In the manufacturing approach of the color membrane substrates that present embodiment provides; On underlay substrate, form chromatic photoresist layer and black photoresist layer continuously; Adopt mask that chromatic photoresist layer and black photoresist layer are made public; Make chromatic photoresist layer and black photoresist layer form complete exposure area, partial exposure area and unexposed area, remove unexposed photoresist layer in unexposed area and the partial exposure area, form chromatic photoresist figure and black matrix figure through developing process; Wherein chromatic photoresist figure and black matrix diagram formed just as the step; Therefore the process that forms black matrix figure and chromatic photoresist figure can be accomplished by shared production line, need not to black matrix figure disposes expensive production equipment separately, thereby has reduced the production cost of color membrane substrates.When forming the chromatic photoresist figure, form black matrix figure, reduced the processing step of the black matrix figure of independent formation, thereby shortened the production cycle, improved production efficiency.Need not to make black matrix mask for forming black matrix figure separately, thereby saved the mask manufacturing cost.And present embodiment has also been saved the developer solution that adopts when the matrix figure is deceived in independent formation, thereby has further practiced thrift the production material, has reduced production cost.Can adopt two Nozzle glue spreaders on underlay substrate, to form chromatic photoresist layer and black photoresist layer continuously, need not to adopt two glue spreaders, thereby further reduced production cost.
Be described in detail through the technical scheme in five pairs of the foregoing descriptions four of embodiment below.The process flow diagram of the manufacturing approach of a kind of color membrane substrates that Fig. 6 provides for the embodiment of the invention five, as shown in Figure 6, this method comprises:
Step 601, on underlay substrate, form continuously red photoresist layer and black photoresist layer.
Fig. 7 a is the synoptic diagram that forms red photoresist layer and black photoresist layer among the embodiment five, shown in Fig. 7 a, on underlay substrate 61, forms red photoresist layer 62 and black photoresist layer 63 continuously.Black photoresist layer 63 is positioned on the red photoresist layer 62.Can adopt method of spin coating particularly, rubbing method, ink injection method or photoresist film attach method and on underlay substrate 61, form red photoresist layer 62 and black photoresist layer 63 without spin.
Step 602, employing mask are made public to red photoresist layer and black photoresist layer; Make red photoresist layer and black photoresist layer form complete exposure area, partial exposure area and unexposed area; Complete exposure area is corresponding to the black matrix figure on the marginal position of red photoresistance figure and the marginal position that is positioned at red photoresistance figure; Partial exposure area is corresponding to the centre position of red photoresistance figure, and unexposed area is corresponding to the zone outside the red photoresistance figure.
The synoptic diagram of Fig. 7 b for red photoresist layer and black photoresist layer being made public among the embodiment five; Shown in Fig. 7 b; Red photoresistance mask 64 is positioned over the top of underlay substrate 61 back sides one side; Wherein, red photoresistance mask 64 comprises light tight regional 641, part transmission region 642 and transmission region 643 fully.Adopt UV light (among the figure shown in the arrow) that mask is shone; With realization red photoresist layer 62 is made public with black photoresist layer 63; Form complete exposure area, partial exposure area and unexposed area; Light tight regional 641 are used to form unexposed area, and part transmission region 642 is used to form partial exposure area, and transmission region 643 is used to form complete exposure area fully.Need to prove: the dotted line among Fig. 7 b is in order to distinguish partial exposure area and unexposed area.Complete exposure area 65 is corresponding to the black matrix figure on the marginal position of red photoresistance figure and the marginal position that is positioned at red photoresistance figure; Partial exposure area is corresponding to the centre position of red photoresistance figure, and unexposed area 66 is corresponding to the zone outside the red photoresistance figure.Wherein, the photoresist layer 672 that partial exposure area comprises unexposed photoresist layer and made public, wherein, unexposed photoresist layer comprises the red photoresist layer 6712 of unexposed black photoresist layer 6711 and unexposed part.
Step 603, remove unexposed photoresist layer in unexposed area and the partial exposure area, form red photoresistance figure and be positioned at the black matrix figure on the red photoresistance figure through developing process.
Fig. 7 c is the synoptic diagram that forms red photoresistance figure and black matrix figure among the embodiment five; Shown in Fig. 7 c; Remove the photoresist layer that has made public in unexposed area 66 and the partial exposure area through developing process, form red photoresistance figure 68 and be positioned at the black matrix figure 69 on the red photoresistance figure.Unexposed photoresist layer comprises the red photoresist layer of unexposed part in the partial exposure area, is in order to remove the black photoresist layer on the centre position that is positioned at red photoresistance figure fully through developing process, to avoid leaving over part black photoresist layer.Wherein, red photoresistance graphics package is drawn together the centre position of the marginal position and the red photoresistance figure of red photoresistance figure.
Step 604, red photoresistance figure and the black matrix figure that is positioned on the red photoresistance figure are cured processing.
Step 605, on the underlay substrate of completing steps 604, form continuously green photoresist layer and black photoresist layer.
On underlay substrate, be coated with green photoresist layer and black photoresist layer continuously.Green photoresist layer and black photoresist layer all cover the entire substrate substrate, and the black photoresist layer is positioned on the green photoresist layer.Can adopt method of spin coating particularly, rubbing method, ink injection method or photoresist film attach method and on underlay substrate, form green photoresist layer and black photoresist layer without spin.
Step 606, employing mask are made public to green photoresist layer and black photoresist layer; Make green photoresist layer and black photoresist layer form complete exposure area, partial exposure area and unexposed area; Complete exposure area is corresponding to the black matrix figure on the marginal position of green photoresistance figure and the marginal position that is positioned at green photoresistance figure; Partial exposure area is corresponding to the centre position of green photoresistance figure, and unexposed area is corresponding to the zone outside the green photoresistance figure.
In this step, green photoresistance mask is positioned over the top of the underlay substrate back side one side, wherein, green photoresistance mask comprises light tight zone, part transmission region and transmission region fully.Adopt UV light that mask is shone; With realization green photoresist layer and black photoresist layer are made public; Form complete exposure area, partial exposure area and unexposed area; Light tight zone is used to form and shows the exposure area, and the part transmission region is used to form partial exposure area, and transmission region is used to form complete exposure area fully.The synoptic diagram and Fig. 7 b that in this step green photoresist layer and black photoresist layer are made public are similar, no longer specifically draw here.
Step 607, remove unexposed photoresist layer in unexposed area and the partial exposure area, form green photoresistance figure and be positioned at the black matrix figure on the green photoresistance figure through developing process.
Fig. 7 d is the synoptic diagram that forms green photoresistance figure and black matrix figure among the embodiment five; Shown in Fig. 7 d; Remove unexposed photoresist layer in unexposed area and the partial exposure area through developing process, form green photoresistance figure 70 and be positioned at the black matrix figure 71 on the green photoresistance figure.Unexposed photoresist layer comprises the green photoresist layer of unexposed part in the partial exposure area, is in order to remove the black photoresist layer on the centre position that is positioned at green photoresistance figure fully through developing process, to avoid leaving over part black photoresist layer.Wherein, green photoresistance graphics package is drawn together the centre position of the marginal position and the green photoresistance figure of green photoresistance figure.Need to prove:, therefore in the developing process of this step, can not be removed owing in the step 604 red photoresistance figure and the black matrix figure that is positioned on the red photoresistance figure have been carried out cured.
Step 608, green photoresistance figure and the black matrix figure that is positioned on the green photoresistance figure are cured processing.
Step 609, on the underlay substrate of completing steps 608, form continuously blue photoresist layer and black photoresist layer.
On underlay substrate, be coated with blue photoresist layer and black photoresist layer continuously.Blue photoresist layer and black photoresist layer all cover the entire substrate substrate, and the black photoresist layer is positioned on the blue photoresist layer.Can adopt method of spin coating particularly, rubbing method, ink injection method or photoresist film attach method and on underlay substrate, form blue photoresist layer and black photoresist layer without spin.
Step 610, employing mask are made public to blue photoresist layer and black photoresist layer; Make blue photoresist layer and black photoresist layer form complete exposure area, partial exposure area and unexposed area; Complete exposure area is corresponding to the black matrix figure on the marginal position of blue photoresistance figure and the marginal position that is positioned at blue photoresistance figure; Partial exposure area is corresponding to the centre position of blue photoresistance figure, and unexposed area is corresponding to the zone outside the blue photoresistance figure.
In this step, blue photoresistance mask is positioned over the top of the underlay substrate back side one side, wherein, blue photoresistance mask comprises light tight zone, part transmission region and transmission region fully.Adopt UV light that mask is shone; With realization blue photoresist layer and black photoresist layer are made public; Form complete exposure area, partial exposure area and unexposed area; Light tight zone is used to form unexposed area, and the part transmission region is used to form partial exposure area, and transmission region is used to form complete exposure area fully.The synoptic diagram and Fig. 7 b that in this step blue photoresist layer and black photoresist layer are made public are similar, no longer specifically draw here.
Step 611, remove unexposed photoresist layer in unexposed area and the partial exposure area, form blue photoresistance figure and be positioned at the black matrix figure on the blue photoresistance figure through developing process.
Fig. 7 e is the synoptic diagram that forms blue photoresistance figure and black matrix figure among the embodiment five; Shown in Fig. 7 e; Remove unexposed photoresist layer in unexposed area and the partial exposure area through developing process, form blue photoresistance figure 72 and be positioned at the black matrix figure 73 on the blue photoresistance figure.Unexposed photoresist layer comprises the blue photoresist layer of unexposed part in the partial exposure area, is in order to remove the black photoresist layer on the centre position that is positioned at blue photoresistance figure fully through developing process, to avoid leaving over part black photoresist layer.Wherein, blue photoresistance graphics package is drawn together the centre position of the marginal position and the blue photoresistance figure of blue photoresistance figure.Need to prove: owing to also green photoresistance figure and the black matrix figure that is positioned on the green photoresistance figure have been carried out cured in the step 608, therefore in the developing process of this step red photoresistance figure, be positioned at black matrix figure, the green photoresistance figure on the red photoresistance figure and the black matrix figure that is positioned on the green photoresistance figure can not be removed.
Step 612, blue photoresistance figure and the black matrix figure that is positioned on the blue photoresistance figure are cured processing.
Further, if color membrane substrates also comprises the black matrix figure in the periphery that is positioned at the underlay substrate marginal position, then in the process that forms the chromatic photoresist figure, also form peripheral black matrix figure.Particularly, can in the process that forms red photoresistance figure, green photoresistance figure or blue photoresistance figure, form peripheral black matrix figure, in the process that forms red photoresistance figure, form peripheral black matrix figure in the present embodiment.In the step 602 complete exposure area also corresponding to the red photoresistance figure in periphery be positioned at the black matrix figure on the peripheral red photoresistance figure; Then in the step 603; Remove unexposed photoresist layer in unexposed area and the partial exposure area through developing process, also form peripheral red photoresistance figure 74 and be positioned at the black matrix figure 75 on the peripheral red photoresistance figure.And in step 604, also peripheral red light resistance figure 24 is cured processing with the black matrix figure 25 that is positioned on the peripheral red figure.In the process of green photoresistance figure of follow-up formation and blue photoresistance figure, because having carried out overcuring with black matrix figure 75, handles in peripheral red photoresistance figure 74, therefore in developing process, can not be removed.
Further, can also form common electrode layer on the underlay substrate, this common electrode layer is positioned on red photoresistance figure, green photoresistance figure, blue photoresistance figure and the black matrix figure.Specifically do not draw among the figure.
In the present embodiment, the material of red photoresist layer, green photoresist layer, blue photoresist layer and black matrix layer is the negativity photoresistance.
Need to prove: the formation of red photoresistance figure, green photoresistance figure and blue photoresistance figure order can change as required in the present embodiment, only with a kind of formation order as an example, is not the restriction to technical scheme of the present invention in the present embodiment.
Among above-mentioned each embodiment of the present invention; Only comprise red light resistance figure, green photoresistance figure or blue photoresistance figure with the chromatic photoresist figure; That is: the color membrane substrates of formation comprises that red photoresistance figure, green photoresistance figure and blue photoresistance figure are that example is described technical scheme, but the present invention is not limited thereto.For example: in practical application; The chromatic photoresist figure can also comprise: red photoresistance figure, green photoresistance figure, blue photoresistance figure or yellow photoresistance figure, that is: the color membrane substrates of formation can comprise red photoresistance figure, green photoresistance figure, blue photoresistance figure and yellow photoresistance figure.
In the various embodiments of the present invention, make the color membrane substrates of accomplishing and to carry out box with array base palte, to form liquid crystal indicator.When color membrane substrates and array base palte carried out box, chromatic photoresist figure on the color membrane substrates and black matrix figure were corresponding to the viewing area of array base palte, and the black matrix figure in the periphery on the color membrane substrates is corresponding to the peripheral circuit region of array base palte.
It is understandable that above embodiment only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For the one of ordinary skilled in the art, under the situation that does not break away from spirit of the present invention and essence, can make various modification and improvement, these modification also are regarded as protection scope of the present invention with improving.

Claims (10)

1. the manufacturing approach of a color membrane substrates is characterized in that, comprising:
On underlay substrate, form chromatic photoresist figure and black matrix figure, said chromatic photoresist figure and said black matrix diagram formed just as the step.
2. the manufacturing approach of color membrane substrates according to claim 1 is characterized in that, saidly on underlay substrate, forms the chromatic photoresist figure and black matrix figure comprises:
On said underlay substrate, form chromatic photoresist layer and black photoresist layer continuously;
Forming said chromatic photoresist figure on the said underlay substrate and be positioned at the black matrix figure on the said chromatic photoresist figure through composition technology.
3. the manufacturing approach of color membrane substrates according to claim 2 is characterized in that, saidly comprises with the black matrix figure that is positioned on the said chromatic photoresist figure forming said chromatic photoresist figure on the said underlay substrate through composition technology:
Adopt mask that said chromatic photoresist layer and said black photoresist layer are made public; Make said chromatic photoresist layer and said black photoresist layer form complete exposure area, partial exposure area and unexposed area; Said unexposed area is corresponding to the black matrix figure on the marginal position of said chromatic photoresist figure and the marginal position that is positioned at said chromatic photoresist figure; Said partial exposure area is corresponding to the centre position of said chromatic photoresist figure, and said complete exposure area is corresponding to the zone outside the said chromatic photoresist figure;
Remove the photoresist layer that has made public in complete exposure area and the partial exposure area through developing process, form said chromatic photoresist figure and be positioned at the black matrix figure on the said chromatic photoresist figure.
4. the manufacturing approach of color membrane substrates according to claim 3 is characterized in that, the material of the material of said chromatic photoresist layer and said black photoresist layer is the positivity photoresistance.
5. the manufacturing approach of color membrane substrates according to claim 3 is characterized in that, said mask is arranged at the top of the positive side of said underlay substrate.
6. the manufacturing approach of color membrane substrates according to claim 2 is characterized in that, saidly comprises with the black matrix figure that is positioned on the said chromatic photoresist figure forming said chromatic photoresist figure on the said underlay substrate through composition technology:
Adopt mask that said chromatic photoresist layer and said black photoresist layer are made public; Make said chromatic photoresist layer and said black photoresist layer form complete exposure area, partial exposure area and unexposed area; Said complete exposure area is corresponding to the black matrix figure on the marginal position of said chromatic photoresist figure and the marginal position that is positioned at said chromatic photoresist figure; Said partial exposure area is corresponding to the centre position of said chromatic photoresist figure, and said unexposed area is corresponding to the zone outside the said chromatic photoresist figure;
Remove unexposed photoresist layer in unexposed area and the partial exposure area through developing process, form said chromatic photoresist figure and said black matrix figure.
7. the manufacturing approach of color membrane substrates according to claim 6 is characterized in that, the material of the material of said chromatic photoresist layer and said black photoresist layer is the negativity photoresistance.
8. the manufacturing approach of color membrane substrates according to claim 6 is characterized in that, said mask is arranged at the top of the said underlay substrate back side one side.
9. the manufacturing approach of color membrane substrates according to claim 2 is characterized in that, also comprises:
Said chromatic photoresist figure and the black matrix figure that is positioned on the said chromatic photoresist figure are cured processing.
10. according to the manufacturing approach of the arbitrary described color membrane substrates of claim 1 to 9, it is characterized in that said chromatic photoresist figure comprises that red light resistance figure, green photoresistance figure, blue photoresistance figure are one of at least.
CN201110129027.7A 2011-05-18 The manufacture method of color membrane substrates Active CN102645783B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110129027.7A CN102645783B (en) 2011-05-18 The manufacture method of color membrane substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110129027.7A CN102645783B (en) 2011-05-18 The manufacture method of color membrane substrates

Publications (2)

Publication Number Publication Date
CN102645783A true CN102645783A (en) 2012-08-22
CN102645783B CN102645783B (en) 2016-11-30

Family

ID=

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103913947A (en) * 2014-04-24 2014-07-09 上海和辉光电有限公司 Lithography forming method capable of simplifying array manufacturing procedure process
CN106353966A (en) * 2015-07-16 2017-01-25 许铭案 Device with color photoresist pattern and manufacturing method thereof
CN106353965A (en) * 2015-07-16 2017-01-25 许铭案 Curved mask, curved device with color photoresist pattern and manufacturing method thereof
CN112114453A (en) * 2019-06-20 2020-12-22 京东方科技集团股份有限公司 Color film substrate, display panel and display device
US10948761B2 (en) 2018-01-15 2021-03-16 Boe Technology Group Co., Ltd. Color filter substrate, fabricating method thereof, and display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650867A (en) * 1988-08-30 1997-07-22 Canon Kabushiki Kaisha Functional substrate for controlling pixels
CN1831609A (en) * 2006-04-24 2006-09-13 广辉电子股份有限公司 Color light fictering substrate and manufacturing method thereof
CN101819349A (en) * 2009-02-27 2010-09-01 北京京东方光电科技有限公司 Color film base plate and manufacturing method thereof as well as liquid crystal display panel
WO2010098093A1 (en) * 2009-02-26 2010-09-02 凸版印刷株式会社 Color filter and manufacturing method for a color filter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650867A (en) * 1988-08-30 1997-07-22 Canon Kabushiki Kaisha Functional substrate for controlling pixels
CN1831609A (en) * 2006-04-24 2006-09-13 广辉电子股份有限公司 Color light fictering substrate and manufacturing method thereof
WO2010098093A1 (en) * 2009-02-26 2010-09-02 凸版印刷株式会社 Color filter and manufacturing method for a color filter
CN101819349A (en) * 2009-02-27 2010-09-01 北京京东方光电科技有限公司 Color film base plate and manufacturing method thereof as well as liquid crystal display panel

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103913947A (en) * 2014-04-24 2014-07-09 上海和辉光电有限公司 Lithography forming method capable of simplifying array manufacturing procedure process
CN106353966A (en) * 2015-07-16 2017-01-25 许铭案 Device with color photoresist pattern and manufacturing method thereof
CN106353965A (en) * 2015-07-16 2017-01-25 许铭案 Curved mask, curved device with color photoresist pattern and manufacturing method thereof
CN106353965B (en) * 2015-07-16 2020-10-16 许铭案 Curved mask, curved device with color photoresist pattern and manufacturing method thereof
US10948761B2 (en) 2018-01-15 2021-03-16 Boe Technology Group Co., Ltd. Color filter substrate, fabricating method thereof, and display device
CN112114453A (en) * 2019-06-20 2020-12-22 京东方科技集团股份有限公司 Color film substrate, display panel and display device

Similar Documents

Publication Publication Date Title
CN104965333B (en) COA type liquid crystal display panels and preparation method thereof
CN104062794B (en) Mask plate and ultraviolet mask plate, the manufacture method of array base palte
US20160013415A1 (en) Organic electroluminescent display device, method for manufacturing the same and display apparatus
CN103219336B (en) A kind of preparation method of array base palte, display device and array base palte
US8929007B2 (en) Color filter and manufacturing method thereof
CN103325732A (en) COA substrate and manufacturing method and display device of COA substrate
KR102003269B1 (en) Method of manufacturing an optical filter and method of manufacturing an organic light emitting display device having an optical filter
WO2018040329A1 (en) Light emitting panel and preparation method therefor
CN106980202B (en) Production method and light shield with integral type black matrix" Yu the liquid crystal display panel of photoresist spacer
CN103117248B (en) Array substrate and manufacture method thereof and display device
CN103984202A (en) Masking plate and color film substrate manufacturing method
CN101819349B (en) Color film base plate and manufacturing method thereof as well as liquid crystal display panel
CN106842687A (en) Color membrane substrates and preparation method thereof
US9030767B2 (en) Color filter and manufacturing method thereof
CN104932138B (en) A kind of preparation method of light shield and color membrane substrates
CN103592815A (en) Mask plate, substrate and display device
CN103676390B (en) Array base plate, manufacturing method thereof, and display device
CN104571716A (en) Upper substrate and preparation method thereof, touch display panel and preparation method thereof
US9933652B2 (en) Color filter array substrate and manufacturing method thereof, and display device
US20200117045A1 (en) Liquid crystal display panel and pixel structure thereof and liquid crystal display device
WO2019196798A1 (en) Pixel defining layer, pixel structure, display panel and display device
WO2018196193A1 (en) Array substrate, manufacturing method therefor and display panel
CN105607337A (en) Manufacturing method of color film substrate, color film substrate and liquid crystal display panel
WO2014201714A1 (en) Cf glass substrate, manufacturing method therefor, and liquid crystal display apparatus
CN102981306A (en) Method for manufacturing color filter

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant