CN102637824B - Organic electronic device - Google Patents
Organic electronic device Download PDFInfo
- Publication number
- CN102637824B CN102637824B CN201210129781.5A CN201210129781A CN102637824B CN 102637824 B CN102637824 B CN 102637824B CN 201210129781 A CN201210129781 A CN 201210129781A CN 102637824 B CN102637824 B CN 102637824B
- Authority
- CN
- China
- Prior art keywords
- organic
- electronic device
- layer
- electrode
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses an organic electronic device. The electronic device, from bottom to top, comprises a gate electrode, a gate insulating layer, an organic storage layer, an organic semiconductor layer, and a source electrode and a drain electrode positioned on the same layer, which are superimposed together in sequence, wherein the source electrode and the drain electrode are not in contact; the organic storage layer consists of organic conjugated molecules; and the organic semiconductor layer is a pentacene or polythiophene type organic polymer. According to the organic electronic device, the organic storage layer with a charge storage characteristic is adopted and forms a multilayer structure together with the organic semiconductor layer which has a field effect semiconductor characteristic and a photoconduction characteristic; under the influence of a write-in voltage, photo-induced carriers are absorbed into the organic storage layer for storage; and the stored photo-induced carriers induce charges with equivalent density at the organic semiconductor layer, so that the intensity of optical signals is read out non-destructively by measuring the electric conductivity of an organic semiconductor.
Description
Technical field
The present invention relates to a kind of organic electronic device, belong to organic electronics technical field.
Background technology
The research activities of organic electronics constantly heats up at recent two decades, and various function components and parts based on organic electronics are numerous and confused obtains the development being exceedingly fast.For example, organic field effect tube, Organic Light Emitting Diode, organic solar batteries etc. are applied in some displaying property and commercial product.Generally speaking, organic electronic is conducive to realize large area, flexible and cheap functional circuit.Therefore the electronics based on organic material is considered to market prospects and huge commercial value widely.
Imaging circuit based on organic electronics also enjoys attention as other functional circuits, and the organic imaging circuit that has flexible speciality can be applied in synthetic eye, in the frontiers such as flexible scanner.Owing to being subject to the restriction of organic electronic device kind, current organic imaging circuit imaging strategy is all that the organic photo diode with photoelectric respone is directly assembled to array, then addressing read signal successively.Clearly, if obtain distortionless image, just must, before all pixel has read, keep input optical signal constant.And with reference to conventional charge coupled apparatus (Charge-coupled device, CCD) imaging pattern can be predicted, if charge accumulator and light sensitive diode can be attached in pixel element, adopt the imaging pattern of 1 transducer+1 memory, will more be conducive to realize organic imaging function.
Summary of the invention
The object of this invention is to provide a kind of organic electronic device.
A kind of organic electronic device provided by the present invention, described electronic device comprises gate electrode, gate insulation layer, organic accumulation layer, the organic semiconductor layer of stack successively and source electrode and the drain electrode that is positioned at same layer from the bottom to top, between described source electrode and drain electrode, does not contact;
Described organic accumulation layer is comprised of organic conjugated molecule;
Described organic semiconductor layer is pentacene or polythiophene class organic polymer.
Above-mentioned organic electronic device, the material of described gate electrode, source electrode and drain electrode all can be metal, conducting metal oxide, conductive carbon material or conducting polymer.
Above-mentioned organic electronic device, the material of described gate electrode, source electrode and drain electrode all specifically can be gold, silver or heavily doped silicon.
Above-mentioned organic electronic device, the material of described gate insulation layer can be inorganic oxide insulating barrier or organic polymer insulating barrier, the material of described inorganic oxide insulating barrier specifically can be silicon dioxide or silicon nitride, and the material of described organic polymer insulating barrier specifically can be polyacrylonitrile material.
Above-mentioned organic electronic device, the material of described gate insulation layer specifically can be silicon dioxide or polyacrylonitrile.
Above-mentioned organic electronic device, described organic conjugated molecule specifically can be 2,2 '-(2,8-didecyl anthra [2,3-b:6,7-b '], two thiophene-5,11-bis-subunits) two malononitrile.
Above-mentioned organic electronic device, described polythiophene class organic polymer specifically can be 3-n-hexyl polythiophene.
Above-mentioned organic electronic device, the thickness of described organic accumulation layer can be 5～200nm, and the thickness of described organic semiconductor layer can be 10～400nm.
The present invention possesses organic accumulation layer of charge storage ability by introducing, form sandwich construction with the organic semiconductor layer that possesses field-effect semiconductor characteristic and photoconductive property, under the impact that writes voltage, free-carrier-absorptio is retained to get up in organic accumulation layer; The photo-generated carrier of storage induces same isodensity electric charge at organic semiconductor layer, like this by measurement organic semi-conductor electrical conductance, and the harmless light signal power of reading.
From technique scheme, can find out, the present invention has following beneficial effect:
1, incident light total amount and transfer curve threshold voltage linear correlation;
2, the charge storage time in device is very long;
3, device can be wiped by applying grid voltage;
4, the preparation process of device is very simple, in single device with regard to integrated sensitization and two kinds of functions of storage.
Accompanying drawing explanation
Fig. 1 is the structural representation of organic electronic device provided by the invention.
In figure, each mark is as follows: 1 gate electrode, 2 gate insulation layers, 3 organic storage layers, 4 organic semiconductor layers, 5 source electrodes, 6 drain electrodes.
Fig. 2 is the transfer curve of organic electronic device provided by the invention under thin-film transistor mode of operation.
Fig. 3 is for controlling different luminous powers, and under same Writing condition, grid voltage is 35 volts, continues 8 seconds, the amplitude of the resulting transfer curve threshold voltage shift of organic electronic device provided by the invention; By this figure, can be found out, i.e. the total amount of incident light and the amplitude of threshold voltage shift in the set time, the density of stored charge, is the relation that presents linear correlation.
Fig. 4 is that organic electronic device provided by the invention is after process writes optical information, keeping gate electrode voltage is zero, the electrical conductance of test organic semiconductor layer changes, and discovery electric current only decayed 92% through 20000 seconds, showed that electrode device provided by the invention has good storage capacity.
Fig. 5 is that electronic device provided by the invention writes after light signal, apply-100 volts gate voltages, continue 100 milliseconds, the drift condition of threshold voltage, visible negative sense grid voltage can be wiped writing information, in figure, arrow has been indicated operating process, be that initial transfer curve process writes, to the skew of forward grid voltage direction, then pass through-100 volts, continue the gate erase voltage of 100 milliseconds, transfer curve is offset to negative sense grid voltage direction.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described, but the present invention is not limited to following examples.
As shown in Figure 1, organic electronic device provided by the invention comprises gate electrode 1, gate insulation layer 2, organic storage layer 3, the organic semiconductor layer 4 of stack successively and source electrode 5 and the drain electrode 6 that is positioned at same layer from the bottom to top, between source electrode 5 and drain electrode 6, does not contact; Wherein, gate electrode 1 adopts heavily doped silicon, and the material of gate insulation layer 2 is thermal oxidation silicon dioxide, source electrode 5 and drain electrode 6 all adopt gold electrode, organic storage layer 3 adopts the organic conjugated molecule shown in formula I, and organic semiconductor layer 4 adopts pentacene, and its structure is suc as formula shown in II;
Formula I
Formula II
Above-mentioned electrode device can be prepared by the following method:
1, the silicon chip with 300 nano-oxide layers by surface washs successively in washing agent, water, intermediate water, ethanol and acetone soln, under the condition of 80 ℃, dries, standby;
2, the organic conjugated molecule shown in formula I is made into the solution that concentration is 4mg/mL in chloroform, by spin coating (spin-coating), preparing a layer thickness is the organic accumulation layer 3 of 20 nanometer; Then on hot platform, anneal 60 seconds, Temperature Setting is 80 ℃;
3, by vacuum evaporation, when vacuum degree drop to 0.0008Pa following after, the thick pentacene organic semiconductor layer 4 of heating evaporation one deck 40nm;
4, by mask method, below vacuum degree drops to 0.0008Pa after, the thick gold of heating evaporation one deck 20nm is as source electrode 5 and drain electrode 6.
In above-mentioned organic electronic device, gate insulation layer 2 also can adopt silicon nitride or polyacrylonitrile, and gate electrode 1, source electrode 5 and drain electrode 6 all also can adopt silver and gold; Organic storage layer 3 also can adopt other to have the organic conjugated molecule of similar electronics function; The polythiophene class organic polymers such as organic semiconductor layer 4 also can adopt pentacene, 3-n-hexyl polythiophene; The thickness of organic storage layer 3 can be adjusted in the scope of 5～200 nanometers, and the thickness of organic semiconductor layer 4 can be adjusted in the scope of 10～400 nanometers.
Fig. 2 is the transfer curve of above-mentioned organic electronic device under thin-film transistor mode of operation, test process is: source electrode applies the voltage of 0 volt, drain electrode applies-50 volts of voltages, and gate electrode scans from 10 volts to-50 volts, and collection source-drain current is mapped and obtained Fig. 2.
Fig. 3 obtains according to following method of testing: obtain first in the manner described above transfer curve, source electrode applies 0 volt of voltage, drain electrode applies 0 volt of voltage, gate electrode applies 35 volts of voltages, capable of regulating illumination intensity, maintain 8 seconds, again test transfer curve, the situation of change of transfer curve threshold voltage is obtained to Fig. 3 from the different common mappings of incident light luminous power; By this figure, can be found out, i.e. the total amount of incident light and the amplitude of threshold voltage shift in the set time, the density of stored charge, is the relation that presents linear correlation.
Fig. 4 obtains according to following method of testing: this device that first exposes, and apply and write voltage, then keeping grid voltage is 0 volt, test has leakage current, obtains the attenuation of electric current in the time range of 20000s.
Fig. 5 obtains according to following method of testing: first obtain the transfer curve of this device, then exposure, tests transfer curve again, then apply-100 volts, maintain 0.1 second, again test transfer curve, find that transfer curve is wiped free of potential pulse and moves, information can be wiped free of.
Claims (5)
1. an organic electronic device, it is characterized in that: described electronic device comprises gate electrode, gate insulation layer, organic accumulation layer, the organic semiconductor layer of stack successively and source electrode and the drain electrode that is positioned at same layer from the bottom to top, between described source electrode and drain electrode, does not contact;
Described organic accumulation layer is comprised of organic conjugated molecule;
Described organic conjugated molecule is 2,2 '-(2,8-didecyl anthra [2,3-
b: 6,7-
b'] two thiophene-5,11-bis-subunits) two malononitrile;
Described organic semiconductor layer is polythiophene class organic polymer;
Described polythiophene class organic polymer is 3-n-hexyl polythiophene;
The thickness of described organic accumulation layer is 5nm ~ 200nm;
The thickness of described organic semiconductor layer is 10nm ~ 400nm.
2. electronic device according to claim 1, is characterized in that: the material of described gate electrode, source electrode and drain electrode is metal, conducting metal oxide, conductive carbon material or conducting polymer.
3. electronic device according to claim 2, is characterized in that: the material of described gate electrode, source electrode and drain electrode is gold, silver or heavily doped silicon.
4. according to arbitrary described electronic device in claim 1-3, it is characterized in that: the material of described gate insulation layer is inorganic oxide insulating barrier or organic polymer insulating barrier.
5. electronic device according to claim 4, is characterized in that: the material of described gate insulation layer is silicon dioxide or polyacrylonitrile.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210129781.5A CN102637824B (en) | 2012-04-27 | 2012-04-27 | Organic electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210129781.5A CN102637824B (en) | 2012-04-27 | 2012-04-27 | Organic electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102637824A CN102637824A (en) | 2012-08-15 |
| CN102637824B true CN102637824B (en) | 2014-09-03 |
Family
ID=46622139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210129781.5A Active CN102637824B (en) | 2012-04-27 | 2012-04-27 | Organic electronic device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102637824B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110006966A (en) * | 2019-04-26 | 2019-07-12 | 上海交通大学 | A kind of non-intrusion type flexible sensor detecting dopamine |
| CN110964052B (en) * | 2019-12-23 | 2022-08-05 | 南京和颂材料科技有限公司 | Storage property of organic functional material containing terminal aldehyde group |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7005674B2 (en) * | 2003-07-03 | 2006-02-28 | Samsung Electronics Co., Ltd. | Organic thin film transistor comprising multi-layered gate insulator |
| CN101295765A (en) * | 2008-06-19 | 2008-10-29 | 中国科学院化学研究所 | Organic field effect transistor, preparation and application thereof |
-
2012
- 2012-04-27 CN CN201210129781.5A patent/CN102637824B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7005674B2 (en) * | 2003-07-03 | 2006-02-28 | Samsung Electronics Co., Ltd. | Organic thin film transistor comprising multi-layered gate insulator |
| CN101295765A (en) * | 2008-06-19 | 2008-10-29 | 中国科学院化学研究所 | Organic field effect transistor, preparation and application thereof |
Non-Patent Citations (2)
| Title |
|---|
| Lei Zhang,et al.Solution processed organic field-effect transistors and their application in printed logic circuits.《Journal of Materials Chemistry》.2010,第20卷(第34期),第7059-7073页. |
| Solution processed organic field-effect transistors and their application in printed logic circuits;Lei Zhang,et al;《Journal of Materials Chemistry》;20100603;第20卷(第34期);第7059-7073页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102637824A (en) | 2012-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | Advances in flexible organic field-effect transistors and their applications for flexible electronics | |
| Leydecker et al. | Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend | |
| Zhang et al. | Large-area, flexible imaging arrays constructed by light-charge organic memories | |
| Someya et al. | Chemical and physical sensing by organic field‐effect transistors and related devices | |
| US6992322B2 (en) | Photo-responsive organic field effect transistor | |
| Said et al. | Polymer field-effect transistor gated via a poly (styrenesulfonic acid) thin film | |
| Xu et al. | Organic transistor nonvolatile memory with three-level information storage and optical detection functions | |
| KR20070107606A (en) | Photosensing transistor | |
| Yan et al. | High-performance low-voltage flexible photodetector arrays based on all-solid-state organic electrochemical transistors for photosensing and imaging | |
| Dhar et al. | Threshold voltage shifting for memory and tuning in printed transistor circuits | |
| Lee et al. | Highly sensitive ultraviolet light sensor based on photoactive organic gate dielectrics with an azobenzene derivative | |
| Duan et al. | Low-power-consumption organic field-effect transistors | |
| Zhao et al. | Solution-processed flexible organic ferroelectric phototransistor | |
| CN112909116B (en) | Field effect transistor photoelectric detector based on dielectric layer response | |
| Wang et al. | Flexible, low-voltage, and n-type infrared organic phototransistors with enhanced photosensitivity via interface trapping effect | |
| Xu et al. | Flexible and highly photosensitive electrolyte-gated organic transistors with ionogel/silver nanowire membranes | |
| Li et al. | Photoerasable organic field-effect transistor memory based on a one-step solution-processed hybrid floating gate layer | |
| CN102637824B (en) | Organic electronic device | |
| WO2006097566A1 (en) | Methods and arrangements for acquiring and utilising enhanced electronic conduction in an organic thin film transistor | |
| Kang et al. | Light-sensitive charge storage medium with spironaphthooxazine molecule-polymer blends for dual-functional organic phototransistor memory | |
| Jung et al. | Photo-induced negative differential resistance of organic thin film transistors using anthracene derivatives | |
| Xu et al. | An organic water-gated ambipolar transistor with a bulk heterojunction active layer for stable and tunable photodetection | |
| Chen et al. | Structure–property relation in organic–metal oxide hybrid phototransistors | |
| Swathi et al. | Image pixel device using integrated organic electronic components | |
| Sun et al. | High-performance polymer semiconductor-based nonvolatile memory cells with nondestructive read-out |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |