CN102637594A - Device and method for annealing and alloying epitaxial wafers - Google Patents
Device and method for annealing and alloying epitaxial wafers Download PDFInfo
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- CN102637594A CN102637594A CN2012100721222A CN201210072122A CN102637594A CN 102637594 A CN102637594 A CN 102637594A CN 2012100721222 A CN2012100721222 A CN 2012100721222A CN 201210072122 A CN201210072122 A CN 201210072122A CN 102637594 A CN102637594 A CN 102637594A
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Abstract
The invention discloses a device and method for annealing and alloying epitaxial wafers, relating to the annealing and alloying technology of semiconductor epitaxial wafers and aiming to solve the problems of low efficiency and degraded product quality after annealing and alloying of the prior art. The device is characterized in that a heat conducting plate comprises a channel for media to pass; the channel on the heat conducting plate comprises a medium inlet and a medium outlet; the two ends of a medium heating device with valves at the two ends and the two ends of a medium cooling device with valves at the two ends are connected in parallel and are connected with a medium pump in series; the medium pump is connected with the channel on the heat conducting plate in series; and when one of the medium heating device and the medium cooling device is closed and the other one is opened, the medium pump drives the media to flow to form a medium closed cycle. The device and the method have the following beneficial effects that the epitaxial wafers can be quickly cooled; the efficiency can be improved; and the quality of the epitaxial wafers can be improved. The method and the equipment are suitable for annealing and alloying the semiconductor epitaxial wafers.
Description
Technical field
The present invention relates to that semiconductor epitaxial wafer heats up or the Treatment Technology of lowering the temperature, it is suitable for the technology such as annealing, alloy of semiconductor epitaxial wafer, for example the extension field of light-emitting diode.
Background technology
In the semiconductor device manufacturing, epitaxial wafer is carried out the alloy annealing processing step that is absolutely necessary, epitaxial wafer is carried out short annealing and alloy, help improving the photoelectric properties and the reliability of device.Especially in indium-gallium-aluminum-nitrogen vertical stratification or upside-down mounting welding core manufacturing, generally to use argent, it is carried out alloy annealing,, the silver hair green-ball gathered, thereby the light extraction efficiency of device is reduced if annealing time is oversize as p type metal ohmic contact.General method for annealing or realize the heating of epitaxial wafer to epitaxial wafer through gas heat-transfer, or slice, thin piece is placed on the heating plate, let heating plate that epitaxial wafer is heated.When epitaxial wafer being heated with gas; Because the The Thermal Capacity of Gaseous amount is very little, thereby need just can make whole epitaxial wafer obtain uniform high temperature in a long time; This can cause subregion alloy annealing overlong time, makes the uniformity variation of device performance on the epitaxial wafer.Heat if epitaxial wafer is placed on the heating plate; Can receive influencing heating plate and need passing through that the long period could realize heating up and cooling of the thermal capacity of heating plate own; Make warm-up time elongated, thereby epitaxial wafer need tolerate longer time high temperature, this can cause that metal level generation ball gathers etc. performance degradation.If keep condition of high temperature bottom setting-out article annealed alloy at heater, although can the heating and cooling of the section of realization time, the unusual difficulty of operation so especially need be annealed under protective gas or vacuum environment or alloy can't be realized operating especially.So, general annealed alloy method, very difficult realization heats up fast and lowers the temperature, especially at vacuum state or Buchholz protection state.
Thereby the method and apparatus of inventing a kind of short annealing alloy of simple and feasible seems extremely important, can enhance productivity, and can improve the performance of semiconductor device again.
Summary of the invention
First technical problem to be solved by this invention is: in order to overcome the above-mentioned defective of prior art; The present invention proposes a kind of epitaxial wafer to be carried out the device of annealed alloy, and the efficient that prior art exists is low in order to solve, the problem of product quality deterioration behind the annealed alloy.
Second technical problem to be solved by this invention is: in order to overcome the above-mentioned defective of prior art; The present invention provides a kind of epitaxial wafer is carried out the method for annealed alloy, and the efficient that prior art exists is low in order to solve, the problem of product quality deterioration behind the annealed alloy.
In order to solve above-mentioned first technical problem, what the present invention proposed carries out the device of annealed alloy to epitaxial wafer, comprises heat-conducting plate, comprises the passage that supplies medium to pass through on the said heat-conducting plate, and the passage on the heat-conducting plate comprises the import and the outlet of medium; And also comprise
One two ends are equipped with the medium heater of valve;
One two ends are equipped with the medium cooling device of valve;
The two ends of medium heater and medium cooling device also connect, and they are connected in series connection with a medium pump, and medium pump is connected in series connection with passage on the heat-conducting plate;
When the medium heater cuts out, when medium cooling device is opened, medium pump promotes the media flow in the medium cooling device, the passage on the heat-conducting plate, medium pump and medium cooling device form the medium closed cycle; When the unlatching of medium heater, when medium cooling device is closed, medium pump promotes the media flow in the medium heater, and the passage on the heat-conducting plate, medium pump and medium heater form the medium closed cycle.
Preferably: said passage is the hollow-core construction that is located on the said heat-conducting plate, or is fixed on the lip-deep pipeline of heat-conducting plate, or embeds the pipeline on the heat-conducting plate.
Preferably: the material of said heat-conducting plate is: graphite, quartz or ceramic Inorganic Non-metallic Materials; Or the elemental metals material of copper, silver, aluminium, iron, gold, platinum, tungsten, molybdenum, vanadium or zirconium; Or heat resisting steel, cast iron or stainless alloy material; Or the composite material of multiple layer metal material formation; Or the multilayer material of nonmetallic materials formation; Or the alternate laminated composite materials of metal material and nonmetallic materials formation.
Preferably: there is clad material on said heat-conducting plate surface, and clad material is for having carborundum, boron carbide, silicon nitride or silica.
Preferably: said heat-conducting plate is located in the vacuum cavity, perhaps is located in the cavity that is mixed with protective gas.
Preferably: said medium is gas medium, liquid medium or their mixing.
Preferably: said medium is: water, silicone oil or pumping fluid; Or nitrogen, oxygen, air, carbon dioxide, helium or argon gas.
Preferably: said medium heater and medium cooling device comprise the input pipe and the efferent duct of medium, and wherein, the mouth of pipe of input pipe is positioned under the liquid medium liquid level, and the mouth of pipe of efferent duct is positioned on the liquid medium liquid level; Medium gets into medium pump by input pipe, is passed back in medium heater or the medium cooling device by efferent duct.
In order to solve above-mentioned second technical problem, provided by the invention epitaxial wafer is carried out the method for annealed alloy, may further comprise the steps:
Epitaxial wafer is placed on the heat-conducting plate;
Give the heating of the medium in the medium heater, give the medium cooling in the medium cooling device;
When epitaxial wafer is heated up; Open the valve on medium heater both sides, close the valve closing on medium cooling device both sides, medium pump work; The medium of heat is constantly circulated in the loop; MEDIA FLOW is crossed the passage on the heat-conducting plate, conducts heat through heat-conducting plate, and epitaxial wafer is in the heat treatment of thermal process status to epitaxial wafer to be accomplished;
When epitaxial wafer is lowered the temperature; Open the valve on medium cooling device both sides, close the valve on medium heater both sides, medium pump work; Cold medium is constantly circulated in the loop; MEDIA FLOW is crossed the passage on the heat-conducting plate, conducts heat through heat-conducting plate, and epitaxial wafer is in cooling state to epitaxial wafer cooling processing to be accomplished.
Preferably: said heat treatment is the alloy treatment to epitaxial wafer;
Said cooling processing is the annealing in process to epitaxial wafer;
Each implements above-mentioned alloy treatment and annealing in process once, perhaps repeats the enforcement that repeatedly circulates.
Preferably: said heat-conducting plate is located in the vacuum environment, perhaps is located in the environment that is mixed with protective gas.
The present invention can realize the fast cooling of epitaxial wafer, raises the efficiency, and improves the quality of epitaxial wafer.Method and apparatus of the present invention is suitable for technologies such as the annealing, alloy, timeliness of semiconductor epitaxial wafer.
Description of drawings
Fig. 1 is the structural representation of a heat-conducting plate embodiment of the present invention.
Fig. 2 is the overall structure sketch map of the embodiment of the invention.
Embodiment
The present invention proposes a kind of epitaxial wafer to be carried out the device of annealed alloy, comprises heat-conducting plate, comprises the passage that supplies medium to pass through on the heat-conducting plate, and the passage on the heat-conducting plate comprises the import and the outlet of medium; And also comprise: two ends are equipped with the medium heater of valve; One two ends are equipped with the medium cooling device of valve; The two ends of medium heater and medium cooling device also connect, and they are connected in series connection with a medium pump, and medium pump is connected in series connection with passage on the heat-conducting plate; When the medium heater cuts out, when medium cooling device is opened, medium pump promotes the media flow in the medium cooling device, the passage on the heat-conducting plate, medium pump and medium cooling device form the medium closed cycle; When the unlatching of medium heater, when medium cooling device is closed, medium pump promotes the media flow in the medium heater, and the passage on the heat-conducting plate, medium pump and medium heater form the medium closed cycle.
The present invention realizes that the method for short annealing or alloy may further comprise the steps:
Epitaxial wafer is placed on the heat-conducting plate;
Give the heating of the medium in the medium heater, give the medium cooling in the medium cooling device;
When epitaxial wafer is heated up; Open the valve on medium heater both sides, close the valve closing on medium cooling device both sides, medium pump work; The medium of heat is constantly circulated in the loop; MEDIA FLOW is crossed the passage on the heat-conducting plate, conducts heat through heat-conducting plate, and epitaxial wafer is in the heat treatment of thermal process status to epitaxial wafer to be accomplished;
When epitaxial wafer is lowered the temperature; Open the valve on medium cooling device both sides, close the valve on medium heater both sides, medium pump work; Cold medium is constantly circulated in the loop; MEDIA FLOW is crossed the passage on the heat-conducting plate, conducts heat through heat-conducting plate, and epitaxial wafer is in cooling state to epitaxial wafer cooling processing to be accomplished.
Fig. 1With
Fig. 2It is the sketch map that the present invention realizes a kind of embodiment of epitaxial wafer short annealing alloy; The rapid temperature rise and drop of this embodiment is realized through the cold and hot liquids medium heat conduction; Then feed heated medium when needing heat-conducting plate to heat up, then feed coolant when needing the heat-conducting plate cooling
Fig. 1Be the structural representation of heat-conducting plate,
Fig. 2It is the system layout sketch map that the heat-conducting plate realization is rapidly heated and lowers the temperature.
Fig. 1In
301Be heat-conducting plate,
302Be the import of heat-conducting medium,
303Be the outlet of heat-conducting medium,
304Be epitaxial wafer.
Fig. 2In
401Be heat-conducting plate,
402Be epitaxial wafer,
403Be heated thermal medium,
404Be the cold medium that is cooled,
405Be the hydrothermal solution input channel of heated medium,
406Be first valve of hot medium pipeline,
407Be second valve of cold medium pipeline,
408Be infusion pump,
409Be the cold liquid input channel of the medium that is cooled,
410Be the public input channel of the heat transfer medium of heat-conducting plate,
411Be the public output channel of the heat transfer medium of heat-conducting plate,
412Be the 3rd valve of the reflux line of heated medium,
413Be the 4th valve of the reflux line of the medium that is cooled,
414Be the hydrothermal solution reflux line of heated medium,
415Cold liquid reflux line for the medium that is cooled.
By Fig. 1With
Fig. 2, at first with epitaxial wafer
304Be placed on heat-conducting plate
301On, when needs heat up to epitaxial wafer, then from the cold and hot medium import of heat-conducting plate
302Feed heated medium, when needs to epitaxial wafer
304During cooling then from import
302Feed coolant.Because the thermal capacity of medium is big, so can realize the short annealing alloy of epitaxial wafer, the limit maximum temperature of alloy is by the heating-up temperature decision that medium allowed, and the speed of intensification and cooling is by temperature, specific heat capacity and the flow velocity decision of medium.
Fig. 2Be the sketch map of realizing cold and hot medium alternate cycles, it can be realized being rapidly heated of following process and cool off: at first be provided with the heat-conducting plate of hollow structure
401On put epitaxial wafer well
402, and give thermal medium simultaneously
403Cold medium is given in heating
404Cooling (" heat " is relative concept with " cold " in above-mentioned " thermal medium " and " cold medium ", only is used for title and distinguishes).When medium reach temperature required after, promptly can externally prolong sheet and carry out heating and cooling.
When epitaxial wafer is heated: start infusion pump
408, open the thermal medium delivery valve, i.e. first valve
406With the thermal medium return valve, i.e. the 3rd valve
412, the delivery valve of cold medium of while, i.e. second valve
407With the return valve of cold medium, i.e. the 4th valve
413Be in closed condition, this moment, heated medium was at the hydrothermal solution output channel
405, public input channel
410, public output channel
411With the hydrothermal solution reflux line
414And and heat-conducting plate
401In flow, thereby can be rapidly with the heat transferred epitaxial wafer
402Realization is rapidly heated.
When epitaxial wafer is lowered the temperature: close first valve
406With the 3rd valve
414, open second valve simultaneously
407With the 4th valve
415This moment is through the cold medium of supercooling
404At cold liquid input channel
409, public input channel
410, public output channel
411With cold liquid reflux line
415And heat-conducting plate
401In circulate, the heat of heat-conducting plate is taken away rapidly.Through the alternate cycles of cold and hot medium in heat-conducting plate, realize heating up fast and lowering the temperature.
After dropping to the temperature of technology permission, epitaxial wafer is taken off from heat-conducting plate, change new epitaxial wafer, step above repeating, the annealed alloy operation of beginning next round epitaxial wafer.
The material of heat-conducting plate can be: Inorganic Non-metallic Materials such as graphite, quartz, pottery; Also can be elemental metals materials such as copper, silver, aluminium, iron, gold, platinum, tungsten, molybdenum, vanadium, zirconium; Also can be alloy materials such as heat resisting steel, cast iron or stainless steel; Also can be the composite material that the multiple layer metal material constitutes, also can be the multilayer material that nonmetallic materials constitute, and also can be the alternate laminated composite materials that metal material and nonmetallic materials constitute.Its inside of heat-conducting plate can be hollow, also can be hollow and solid alternate structure; If hollow-core construction, except that the import of coolant and outlet, all the other positions can be sealing also can be blow-by.Can there be common clad materials such as carborundum, boron carbide, silicon nitride, silica on the surface of heat-conducting plate, also can not do clad material.Heat-conducting plate can be installed in a cavity the inside that can vacuumize, and also can be installed in one by under the cavity environment of Buchholz protection.The medium of heat-conducting plate can be water, silicone oil, vacuum pump wet goods liquid cooling medium; Also can be gas mediums such as nitrogen, oxygen, air, carbon dioxide, helium, argon gas; Also can be that the liquids and gases medium replaces.
The particular content that the present invention protected is not limited only to following described various examples; Any conspicuous modification or reconfiguring of various example key elements that following example is made all are protected by the present invention, and the maximum magnitude that protection scope of the present invention and claims are limited is consistent.
In addition, except above-mentioned annealed alloy arts demand, the various of other can be used the present invention's technology, for example intensification cooling and the constant temperature before and after the timeliness to the epitaxial wafer technology that cooling handles that heats up.
Claims (11)
1. one kind is carried out the device of annealed alloy to epitaxial wafer, comprises heat-conducting plate, and it is characterized in that: comprise the passage that supplies medium to pass through on the said heat-conducting plate, the passage on the heat-conducting plate comprises the import and the outlet of medium; And also comprise
One two ends are equipped with the medium heater of valve;
One two ends are equipped with the medium cooling device of valve;
The two ends of medium heater and medium cooling device also connect, and they are connected in series connection with a medium pump, and medium pump is connected in series connection with passage on the heat-conducting plate;
When the medium heater cuts out, when medium cooling device is opened, medium pump promotes the media flow in the medium cooling device, the passage on the heat-conducting plate, medium pump and medium cooling device form the medium closed cycle; When the unlatching of medium heater, when medium cooling device is closed, medium pump promotes the media flow in the medium heater, and the passage on the heat-conducting plate, medium pump and medium heater form the medium closed cycle.
2. according to claim 1 epitaxial wafer is carried out the device of annealed alloy, it is characterized in that:
Said passage is the hollow-core construction that is located on the said heat-conducting plate, or is fixed on the lip-deep pipeline of heat-conducting plate, or embeds the pipeline on the heat-conducting plate.
3. according to claim 1 epitaxial wafer is carried out the device of annealed alloy, it is characterized in that: the material of said heat-conducting plate is: graphite, quartz or ceramic Inorganic Non-metallic Materials; Or the elemental metals material of copper, silver, aluminium, iron, gold, platinum, tungsten, molybdenum, vanadium or zirconium; Or heat resisting steel, cast iron or stainless alloy material; Or the composite material of multiple layer metal material formation; Or the multilayer material of nonmetallic materials formation; Or the alternate laminated composite materials of metal material and nonmetallic materials formation.
4. according to claim 1 epitaxial wafer is carried out the device of annealed alloy, it is characterized in that: there is clad material on said heat-conducting plate surface, and clad material is for having carborundum, boron carbide, silicon nitride or silica.
5. according to claim 1 epitaxial wafer is carried out the device of annealed alloy, it is characterized in that: said heat-conducting plate is located in the vacuum cavity, perhaps is located in the cavity that is mixed with protective gas.
6. according to claim 1 epitaxial wafer is carried out the device of annealed alloy, it is characterized in that: said medium is gas medium, liquid medium or their mixing.
7. according to claim 1 epitaxial wafer is carried out the device of annealed alloy, it is characterized in that: said medium is: water, silicone oil or pumping fluid; Or nitrogen, oxygen, air, carbon dioxide, helium or argon gas.
8. the device that epitaxial wafer is carried out annealed alloy according to claim 1; It is characterized in that: said medium heater and medium cooling device comprise the input pipe and the efferent duct of medium; Wherein, The mouth of pipe of input pipe is positioned under the liquid medium liquid level, and the mouth of pipe of efferent duct is positioned on the liquid medium liquid level; Medium gets into medium pump by input pipe, is passed back in medium heater or the medium cooling device by efferent duct.
9. one kind is carried out the method for annealed alloy to epitaxial wafer, may further comprise the steps:
Epitaxial wafer is placed on the heat-conducting plate;
Give the heating of the medium in the medium heater, give the medium cooling in the medium cooling device;
When epitaxial wafer is heated up; Open the valve on medium heater both sides, close the valve closing on medium cooling device both sides, medium pump work; The medium of heat is constantly circulated in the loop; MEDIA FLOW is crossed the passage on the heat-conducting plate, conducts heat through heat-conducting plate, and epitaxial wafer is in the heat treatment of thermal process status to epitaxial wafer to be accomplished;
When epitaxial wafer is lowered the temperature; Open the valve on medium cooling device both sides, close the valve on medium heater both sides, medium pump work; Cold medium is constantly circulated in the loop; MEDIA FLOW is crossed the passage on the heat-conducting plate, conducts heat through heat-conducting plate, and epitaxial wafer is in cooling state to epitaxial wafer cooling processing to be accomplished.
10. according to claim 9 epitaxial wafer is carried out the method for annealed alloy, it is characterized in that: said heat treatment is the alloy treatment to epitaxial wafer;
Said cooling processing is the annealing in process to epitaxial wafer;
Each implements above-mentioned alloy treatment and annealing in process once, perhaps repeats the enforcement that repeatedly circulates.
11. according to claim 9 epitaxial wafer is carried out the method for annealed alloy, it is characterized in that: said heat-conducting plate is located in the vacuum environment, perhaps is located in the environment that is mixed with protective gas.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103672836A (en) * | 2012-08-31 | 2014-03-26 | 宁波新乐生活电器有限公司 | Automatic water adding evaporation pan |
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| CN102041487A (en) * | 2009-10-14 | 2011-05-04 | 东京毅力科创株式会社 | Temperature control system and temperature control method for substrate mounting table |
| US8057602B2 (en) * | 2007-05-09 | 2011-11-15 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
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2012
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Patent Citations (6)
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| US20020084261A1 (en) * | 2000-12-28 | 2002-07-04 | Shunpei Yamazaki | Heat treatment apparatus and method of manufacturing a semiconductor device |
| CN1533592A (en) * | 2001-07-19 | 2004-09-29 | ������������ʽ���� | Thermal treatment apparats and thermal treatment method |
| CN1545137A (en) * | 2003-11-12 | 2004-11-10 | 四川大学 | Gas-filled annealing furnace |
| US20070218706A1 (en) * | 2006-03-14 | 2007-09-20 | Tokyo Electron Limited | Heat treating apparatus, heat treating method, and storage medium |
| US8057602B2 (en) * | 2007-05-09 | 2011-11-15 | Applied Materials, Inc. | Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103672836A (en) * | 2012-08-31 | 2014-03-26 | 宁波新乐生活电器有限公司 | Automatic water adding evaporation pan |
| CN103672836B (en) * | 2012-08-31 | 2016-08-24 | 宁波新乐生活电器有限公司 | A kind of automatic watering vaporizing pot |
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Address after: 330029 No. 699, aixihu North Road, high tech Zone, Nanchang City, Jiangxi Province Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330029 No. 699, aixihu North Road, high tech Zone, Nanchang City, Jiangxi Province Patentee before: LATTICE POWER (JIANGXI) Corp. |
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