CN102637566A - Barium-tungsten cathode with high current density and preparation method thereof - Google Patents
Barium-tungsten cathode with high current density and preparation method thereof Download PDFInfo
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- CN102637566A CN102637566A CN2012100908173A CN201210090817A CN102637566A CN 102637566 A CN102637566 A CN 102637566A CN 2012100908173 A CN2012100908173 A CN 2012100908173A CN 201210090817 A CN201210090817 A CN 201210090817A CN 102637566 A CN102637566 A CN 102637566A
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Abstract
The invention discloses a barium-tungsten cathode with high current density and a preparation method thereof, wherein the barium-tungsten cathode comprises a cathode molybdenum cylinder (3) and a double-layer substrate filled in the cathode molybdenum cylinder (3), the double-layer substrate comprises an upper layer and a lower layer, the upper layer is a spherical tungsten powder layer (1) formed by pressing spherical tungsten powder serving as a substrate material, and the particle size of the tungsten powder is 4 mu m; the lower layer is a tungsten-rhenium alloy layer (2) formed by pressing tungsten powder and rhenium powder which are mixed as a base material, and the tungsten powder and the rhenium powder are uniformly mixed according to the proportion of 20 percent to 80 percent. The barium-tungsten cathode with the special structure and high current density adopts a double-layer substrate, the upper layer is formed by pressing tungsten powder with specific particles in specific shapes as a substrate material, and the lower layer is formed by pressing tungsten powder and rhenium powder which are mixed as the substrate material, so that 100A/cm can be stably provided2Current density of (2) to satisfy high power, high frequency microwave device pairThe requirement of the cathode provides a powerful guarantee for the development of microwave devices.
Description
Technical field
The present invention relates to a kind of barium-tungsten dispense cathode, especially relate to barium-tungsten dispense cathode of a kind of high current density and preparation method thereof.
Background technology
Along with development of times; The progress of science; Microwave device more and more strides forward towards high-power, high-frequency direction, and this is a huge test to the negative electrode as the microwave device electron source, especially get into millimere-wave band, terahertz wave band after; The current density requirements that electronics is annotated is very big, needs the stable current density that every square centimeter of dozens or even hundreds of ampere is provided of negative electrode ability.Traditional barium-tungsten dispense cathode is because the blind hole of negative electrode cavernous body is more, and pore structure is inhomogeneous, and the deposit of cathode active material is abundant inadequately; Barium content in the cathode active material is low, and cathode active material and the reaction of traditional pure tungsten cathode substrate are too fast, and a large amount of active materials have evaporated very soon; Negative electrode not only emission current is less than normal; Drawing under the state of big electric current, can't lasting stability work, be difficult to satisfy that microwave device is high-power, the needs of high-frequency development.
Summary of the invention
Technical problem to be solved by this invention is to the problem that exists in the prior art barium-tungsten dispense cathode of a kind of high current density and preparation method thereof to be provided, and its objective is to make current density can reach 100A/cm
2, satisfy the needs that microwave device is high-power, high-frequency develops.
Technical scheme of the present invention is that the barium-tungsten dispense cathode of this kind high current density comprises negative electrode molybdenum tube and the double base that is filled in the negative electrode molybdenum tube; Described double base comprises the upper and lower; The upper strata is the tungsten powder globular tungsten powder layer that compacting forms as base material that adopts the ball shape, and lower floor adopts tungsten powder to mix the tungsten-rhenium alloy layer that compacting forms as base material with the rhenium powder.
The particle diameter of described upper strata globular tungsten powder is 2 μ m～10 μ m, is preferably 4 μ m.
Tungsten powder in the described tungsten-rhenium alloy layer and rhenium powder are according to 10%～50%: 90%～50% mixed is even, and the proportion optimization of tungsten powder and rhenium powder is 20%: 80%.
A kind of method that is used to prepare above-mentioned barium-tungsten dispense cathode comprises:
1) get arbitrary shape, granularity purifies annealing less than tungsten powder and the rhenium powder of 50 μ m in hydrogen, in 800 ℃～950 ℃ environment, be incubated 20min～30min;
2) tungsten powder after will purifying and rhenium powder are according to 10%～50%: 90%～50% mixed is even, and preferred proportion is 20%: 80%, prepares the tungsten-rhenium alloy powder;
3) get the globular tungsten powder of particle diameter 2 μ m～10 μ m, similar ball shape, in hydrogen, purify annealing, be incubated 20min～30min in 800 ℃～950 ℃ environment, the preferable particle size 4 μ m of globular tungsten powder;
4) take by weighing an amount of globular tungsten powder, be filled in the negative electrode molybdenum tube, and make powder plain;
5) take by weighing an amount of W-Re mixed powder again, be filled in the negative electrode molybdenum tube after the step 4), and make powder plain;
6) use the pressure target of 8～15T/cm2 to suppress, the cell size of cathode substrate is controlled at 28%～40%, preferably be controlled at 33%～35%;
7) in hydrogen, the negative electrode after the compacting is carried out sintering, be incubated 30～70min in 1400 ℃～1600 ℃ environment;
8) adopt 3.5BaCO
30.5CaCO
3The aluminate of 2Al is lower than at dew point in-60 ℃ the dry hydrogen negative electrode behind the sintering is flooded; Impregnation technology is insulation 7min～12min in the time of 1250 ℃～1300 ℃; Within 2min, rise to 1740 ℃～1780 ℃ then, insulation 30s～70s, cooling subsequently;
9) remove the unnecessary negative electrode salt of cathode surface, and carry out machining according to the figure paper size;
10) use nitrogen as medium, the ion etching cleaning is carried out on the target surface, makes the cathode emission surface expose fresh perforate.
Barium-tungsten dispense cathode with this kind high current density of above-mentioned special construction adopts double base; The upper strata is adopted the tungsten powder of given shape particular particles to suppress as base material and is formed; Lower floor adopts tungsten powder to mix with the rhenium powder to suppress as base material and forms, and 100A/cm can stably be provided
2Current density, satisfy high-power, the anticathode demand of high-frequency microwave device, for the development of microwave device provides strong guarantee.
Description of drawings
Below in conjunction with accompanying drawing the present invention is described further:
Fig. 1 is the structural representation of barium-tungsten dispense cathode among the present invention.
In Fig. 1,1: the globular tungsten powder layer; 2: the tungsten-rhenium alloy layer; 3: negative electrode molybdenum tube.
Embodiment
Structural representation for barium-tungsten dispense cathode among the present invention shown in Figure 1; The barium-tungsten dispense cathode of this kind high current density comprises negative electrode molybdenum tube 3 and the double base that is filled in the negative electrode molybdenum tube 3; Double base comprises the upper and lower; The upper strata is the tungsten powder globular tungsten powder layer 1 that compacting forms as base material that adopts the ball shape, and lower floor adopts tungsten powder to mix the tungsten-rhenium alloy layer 2 that compacting forms as base material with the rhenium powder.
The particle diameter of the globular tungsten powder of upper strata globular tungsten powder layer 1 is 2 μ m～10 μ m, is preferably 4 μ m; Tungsten powder in lower floor's tungsten-rhenium alloy layer 2 and rhenium powder are according to 10%～50%: 90%～50% mixed is even, and proportion optimization is 20%: 80%.
A kind of method that is used to prepare the barium-tungsten dispense cathode of high current density comprises:
1) get arbitrary shape, granularity purifies annealing less than tungsten powder and the rhenium powder of 50 μ m in hydrogen, in 800 ℃～950 ℃ environment, be incubated 20min～30min;
2) tungsten powder after will purifying and rhenium powder are according to 10%～50%: 90%～50% mixed is even, prepares the tungsten-rhenium alloy powder; The proportion optimization of tungsten powder and rhenium powder is 20%: 80%.
3) get the globular tungsten powder of particle diameter 2 μ m～10 μ m, similar ball shape, in hydrogen, purify annealing, be incubated 20min～30min in 800 ℃～950 ℃ environment, the particle diameter of globular tungsten powder is preferably 4 μ m;
4) take by weighing an amount of globular tungsten powder, be filled in the negative electrode molybdenum tube 3, and make powder plain;
5) take by weighing an amount of W-Re mixed powder again, be filled in the negative electrode molybdenum tube 3 after the step 4), and make powder plain;
6) use the pressure target of 8～15T/cm2 to suppress, the cell size of cathode substrate is controlled at 28%～40%, preferably be controlled at 33%～35%;
7) in hydrogen, the negative electrode after the compacting is carried out sintering, be incubated 30～70min in 1400 ℃～1600 ℃ environment;
8) adopt 3.5BaCO
30.5CaCO
3The aluminate of 2Al is lower than at dew point in-60 ℃ the dry hydrogen negative electrode behind the sintering is flooded; Impregnation technology is insulation 7min～12min in the time of 1250 ℃～1300 ℃; Within 2min, rise to 1740 ℃～1780 ℃ then, insulation 30s～70s, cooling subsequently;
9) remove the unnecessary negative electrode salt of cathode surface, and carry out machining according to the figure paper size;
10) use nitrogen as medium, the ion etching cleaning is carried out on the target surface, makes the cathode emission surface expose fresh perforate.
The barium-tungsten dispense cathode of this kind high current density adopts double base, and the tungsten powder of given shape particular particles is adopted on the upper strata, and compacting forms as base material, and lower floor adopts tungsten powder to mix with the rhenium powder to suppress as base material and forms, and 100A/cm can stably be provided
2Current density, satisfy high-power, the anticathode demand of high-frequency microwave device, for the development of microwave device provides strong guarantee.
Claims (9)
1. the barium-tungsten dispense cathode of a high current density; It is characterized in that: described barium-tungsten dispense cathode comprises negative electrode molybdenum tube (3) and is filled in the double base in the negative electrode molybdenum tube (3); Described double base comprises the upper and lower; The upper strata is the tungsten powder globular tungsten powder layer (1) that compacting forms as base material that adopts the ball shape, and lower floor adopts tungsten powder to mix the tungsten-rhenium alloy layer (2) that compacting forms as base material with the rhenium powder.
2. the barium-tungsten dispense cathode of a kind of high current density according to claim 1, it is characterized in that: the particle diameter of described upper strata globular tungsten powder is 2 μ m～10 μ m.
3. the barium-tungsten dispense cathode of a kind of high current density according to claim 1 and 2, it is characterized in that: tungsten powder in the described tungsten-rhenium alloy layer (2) and rhenium powder are according to 10%～50%: 90%～50% mixed is even.
4. the barium-tungsten dispense cathode of a kind of high current density according to claim 3, it is characterized in that: the particle diameter of described upper strata globular tungsten powder is preferably 4 μ m.
5. the barium-tungsten dispense cathode of a kind of high current density according to claim 4, it is characterized in that: the tungsten powder in the described tungsten-rhenium alloy layer (2) and the proportion optimization of rhenium powder are 20%: 80%.
6. method that is used to prepare the barium-tungsten dispense cathode of the described high current density of each claim of claim 1-5 is characterized in that: described preparation method comprises,
1) get arbitrary shape, granularity purifies annealing less than tungsten powder and the rhenium powder of 50 μ m in hydrogen, in 800 ℃～950 ℃ environment, be incubated 20min～30min;
2) tungsten powder after will purifying and rhenium powder are according to 10%～50%: 90%～50% mixed is even, prepares the tungsten-rhenium alloy powder;
3) get the globular tungsten powder of particle diameter 2 μ m～10 μ m, similar ball shape, in hydrogen, purify annealing, be incubated 20min～30min in 800 ℃～950 ℃ environment;
4) take by weighing an amount of globular tungsten powder, be filled in the negative electrode molybdenum tube (3), and make powder plain;
5) take by weighing an amount of W-Re mixed powder again, be filled in the negative electrode molybdenum tube (3) after the step 4), and make powder plain;
6) use the pressure target of 8～15T/cm2 to suppress, the cell size of cathode substrate is controlled at 28%～40%;
7) in hydrogen, the negative electrode after the compacting is carried out sintering, be incubated 30～70min in 1400 ℃～1600 ℃ environment;
8) adopt 3.5BaCO
30.5CaCO
3The aluminate of 2Al is lower than at dew point in-60 ℃ the dry hydrogen negative electrode behind the sintering is flooded; Impregnation technology is insulation 7min～12min in the time of 1250 ℃～1300 ℃; Within 2min, rise to 1740 ℃～1780 ℃ then, insulation 30s～70s, cooling subsequently;
9) remove the unnecessary negative electrode salt of cathode surface, and carry out machining according to the figure paper size;
10) use nitrogen as medium, the ion etching cleaning is carried out on the target surface, makes the cathode emission surface expose fresh perforate.
7. preparation method according to claim 6 is characterized in that: the particle diameter of described upper strata globular tungsten powder is preferably 4 μ m.
8. preparation method according to claim 7 is characterized in that: the tungsten powder in the described tungsten-rhenium alloy layer (2) and the proportion optimization of rhenium powder are 20%: 80%.
9. preparation method according to claim 8 is characterized in that: the cell size of described cathode substrate preferably is controlled at 33%～35%.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104485269A (en) * | 2014-11-11 | 2015-04-01 | 安徽华东光电技术研究所 | Multi-beam cathode rhenium powder treatment method |
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| CN105185675A (en) * | 2015-07-28 | 2015-12-23 | 安徽华东光电技术研究所 | Multi-injection cathode used for ultra-high-power microwave tube, and preparation method thereof |
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| JPS61264625A (en) * | 1985-05-20 | 1986-11-22 | Hitachi Ltd | Impregnated type cathode |
| JPS62237634A (en) * | 1986-04-01 | 1987-10-17 | セラダイン・インコ−ポレ−テツド | Dispenser cathode and its composition |
| CN101145490A (en) * | 2007-08-03 | 2008-03-19 | 安徽华东光电技术研究所 | TWT impregnated Ba-W cathode and its preparation method |
| CN102024640A (en) * | 2009-09-09 | 2011-04-20 | 中国科学院电子学研究所 | Method for preparing impregnated cathode matrix |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS61264625A (en) * | 1985-05-20 | 1986-11-22 | Hitachi Ltd | Impregnated type cathode |
| JPS62237634A (en) * | 1986-04-01 | 1987-10-17 | セラダイン・インコ−ポレ−テツド | Dispenser cathode and its composition |
| CN101145490A (en) * | 2007-08-03 | 2008-03-19 | 安徽华东光电技术研究所 | TWT impregnated Ba-W cathode and its preparation method |
| CN102024640A (en) * | 2009-09-09 | 2011-04-20 | 中国科学院电子学研究所 | Method for preparing impregnated cathode matrix |
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| CN104485269A (en) * | 2014-11-11 | 2015-04-01 | 安徽华东光电技术研究所 | Multi-beam cathode rhenium powder treatment method |
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Address after: 241000 No.01 Eshan Road, high tech Development Zone, Yijiang District, Wuhu City, Anhui Province Patentee after: ANHUI HUADONG PHOTOELECTRIC TECHNOLOGY INSTITUTE Co.,Ltd. Address before: 241000 Anhui Province, Wuhu city Yijiang District South high tech Development Zone Technology Park mansion Patentee before: Anhui Huadong Polytechnic Institute |