CN102637457B - Confidential type 3Dm-ROM (three-dimensional mask programmable-read only memory) - Google Patents
Confidential type 3Dm-ROM (three-dimensional mask programmable-read only memory) Download PDFInfo
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- CN102637457B CN102637457B CN201110042197.1A CN201110042197A CN102637457B CN 102637457 B CN102637457 B CN 102637457B CN 201110042197 A CN201110042197 A CN 201110042197A CN 102637457 B CN102637457 B CN 102637457B
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- rom
- key
- masking film
- memory
- program read
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Abstract
The invention discloses a confidential type 3Dm-ROM (three-dimensional mask programmable-read only memory). The invention changes the conventional view on a mask programmable-read only memory, and provides a 3Dm-ROM which is more suitable for massive information dissemination. The confidential type 3Dm-ROM (3Dm-ROMs) comprises a 3Dm-ROM for storing massive information, an NMP (non-mask programmable memory) for storing keys, and an encryption logic. Powerful copyright protection is realized by writing different keys into different NMPs and encrypting the information stored in the 3Dm-ROM by use of different keys.
Description
Technical field
The present invention relates to integrated circuit fields, or rather, relate to masking film program read-only memory and the application in magnanimity information is propagated thereof.
Background technology
" magnanimity information propagation " refers to the magnanimity distribution of magnanimity information." magnanimity information " is containing GB (GB), even terabyte (TB) information.The example of magnanimity information comprises activity video (as film, TV programme, video recording, video-game etc.) and static images (as photo, map etc.), audio data (as music, audiobook), written historical materials (as book), software and their database (as movie library, game storehouse, map office, music libraries, software library etc.)." magnanimity distribution " magnanimity information is issued to hundreds thousand of, even in millions of customer's (comprising fixed-line subscriber and mobile subscriber) hand.Before distribution, magnanimity information needs be logged and be stored in massage storage.Massage storage needs to have less physical size, lower typing cost, lower carrying cost and stronger copyright protection.
3 D ROM (3-dimensional read-only memory, referred to as 3D-ROM) is considered to the ideal carrier that magnanimity information is propagated.The Chinese patent ZL98119572.5 authorizing the present inventor describes a kind of 3D-ROM, and it is a monolithic semiconductor storer.As shown in Figure 1,3D-ROM contains a Semiconductor substrate 00 and a 3D-ROM heap 10.Substrate 00 is containing multiple transistor and interconnection line thereof, and they form peripheral circuit and other function.3D-ROM heap 10 containing multiple mutually stacked and accumulation layer (as 100,200) be stacked on substrate 00, each three-dimensional accumulation layer (as 100) containing many address selection lines (as 1a, 2a ...) and storage element (as 5aa ...).Each storage element (as 5aa) is positioned at the infall of two address selection lines (as 1a and 2a).Contact channels mouth is (as 1av, 3av ...) for providing electrical connection between accumulation layer (as 100,200) and substrate circuitry 00.Method based on data inputting: 3D-ROM can be divided into two classes: electricity programming 3D-ROM (referred to as 3D-EPROM) and masking film program 3D-ROM (referred to as 3Dm-ROM, referred to as 3D-MPROM in former patent and patented claim).
3D-EPROM refers to the 3D-ROM by electric mode logging data.The example of 3D-EPROM comprises three-dimensional one-time programming storer (3D-OTP) and three-dimensional repeatedly programmable memory (3D-RW) etc.Fig. 2 describes a kind of 3D-EPROM storage element 5e.It contains an a diode film 7d and antifuse film 7a.The resistance of diode film 7d on a direction of current is greater than the resistance in opposite current flow direction.Antifuse film 7a is one deck dielectric film before programming, breakdown and become conducting during programming.The integrality of antifuse film 7a represents the state of storage element.
3Dm-ROM refers in process of production by the 3D-ROM of mask plate definition data.Fig. 3 A and Fig. 3 B describes two kinds of 3Dm-ROM storage elements 5m0,5m1.Storage element 5m0 in Fig. 3 A represents digital " 0 ".It contains an obstruction deielectric-coating 7b, and address selection line 1a with 2a is separated by this obstruction deielectric-coating 7b.Storage element 5m1 in Fig. 3 B represents digital " 1 ".It stops containing an access opening 7c in deielectric-coating 7b, and address selection line 1a and 2a is coupled by this access opening 7c.In the present invention, term " batch " refers to by all storeies adopting same group of mask plate logging data.Such as say, in same 3Dm-ROM batch, each 3Dm-ROM all adopts same group of mask plate logging data and stores identical data.
In the R&D process of 3D-ROM, 3D-EPROM is considered to most promising developing direction always; And 3Dm-ROM is only considered to the mutation of conventional mask programmable memory, belong to the technology being about to eliminate.But, because 3D-EPROM is a kind of matrix type storer based on diode, the very slow (~ 1.5MB/s of its writing rate, see " Sandisk3D-OTP Memory Specifications "), thus long-time typing magnanimity information is needed, as needs ~ 3 hour ability typing high-definition movie (~ 20GB).Long typing time and the high typing cost caused thereof make 3D-EPROM be unsuitable for magnanimity information propagation.
On the other hand, 3Dm-ROM to its copyright protection that provides of the information of depositing be weaker than 3D-EPROM.Because in same 3Dm-ROM batch, all 3Dm-ROM all store identical data, even if therefore these data are encryptions, their key is also identical.Once the key of a 3Dm-ROM is cracked, so in this 3Dm-ROM batch, the confidentiality of other all 3Dm-ROM all can be on the hazard.This situation occurred in optical memory, and what namely DeCSS program was encrypted DVD cracks.Different from 3Dm-ROM, the data of 3D-EPROM can write separately, like this can it is deposited with different double secret key information encryption.Even if therefore the key of a 3D-EPROM is cracked, other confidentiality storing the 3D-EPROM of same information also can not be on the hazard.
In sum, conventional art fails to point out to be suitable for the 3D-ROM that magnanimity information is propagated, and more fails as it provides corresponding strong copyright protection.In order to overcome these defects, the present invention proposes a security type three-dimensional masking film program read-only memory, and (secure3Dm-ROM, referred to as 3Dm-ROM
s).
Summary of the invention
Fundamental purpose of the present invention is to provide the 3 D ROM that a kind of applicable magnanimity information is propagated.
Another object of the present invention is for this kind of 3 D ROM provides corresponding strong copyright protection.
According to these and other object, the invention provides a kind of security type three-dimensional masking film program read-only memory (3Dm-ROM
s).
3D-ERPOM " writes " data in electric mode.Due to its writing rate very slow (~ 1.5MB/s), it needs long-time typing magnanimity information, as needs ~ 3 hour ability typing high-definition movie (~ 20GB).The defect of this essence causes 3D-EPROM to be unsuitable for magnanimity information propagation.Different from 3D-EPROM, 3Dm-ROM is with light mode " print " data: data image is transferred in 3Dm-ROM by mask plate in a photolithographic process.Photoetching can copy data image rapidly, economically in a large amount of chip.Such as, the data (data volume of a high-definition movie) of ~ 20GB can print in hundreds of chips in a lithography step.The printing technology of photoetching-this heavy industrialization-make 3Dm-ROM be more suitable for magnanimity information is propagated.
The professional person of the industry may be more suitable for magnanimity information to above-mentioned conclusion-3Dm-ROM than 3D-EPROM and propagate-be astonished.In fact, by looking back optical memory, this conclusion not indigestion.Now, film is generally issued in the mode of blue light CD-ROM (BD), instead of can the mode of typing dish (BD-R or BD-RE) issue with blue light.This is because BD is by the logging data of female dish impression, therefore cinematic data can be copied in a large number, economically; And BD-R and BD-RE is with WriteMode logging data, need long period (~ 20 minutes) ability typing high-definition movie, this makes it be not suitable for magnanimity distribution.Generally speaking, similar with traditional publication and distribution (as paper publication), in semiconductor storage and optical memory, " print " is more suitable for magnanimity information than " writing " and propagates.
As the carrier that magnanimity information is propagated, 3Dm-ROM needs to provide strong copyright protection to its information of depositing.Correspondingly, the present invention proposes a security type three-dimensional masking film program read-only memory (3Dm-ROM
s).It contains a 3Dm-ROM, unmasked programmable memory (NMP) and an encryption logic.3Dm-ROM stores magnanimity information.NMP storage key, it is a nonvolatile memory (NVM), and not by the logging data of masking film program mode, and adopts the modes such as optical, electrical, magnetic to write data.The data of magnanimity information are passed through secret key encryption by encryption logic.By writing different keys in different NMP, and with the information encryption of depositing in different double secret key 3Dm-ROM, to realize strong copyright protection.Like this, even if a 3Dm-ROM
skey be cracked, other stores the 3Dm-ROM of same information
sconfidentiality also can not be subject to into the side of body.Generally speaking, 3Dm-ROM
sthe copyright protection provided is better than 3Dm-ROM, suitable with 3D-EPROM.Notice, although they all adopt print typing mode, 3Dm-ROM
soptical memory (as DVD, BD) is better than to the copyright protection of magnanimity information.
Accompanying drawing explanation
Fig. 1 is the sectional view (conventional art) of a kind of 3 D ROM (3D-ROM).
Fig. 2 is a kind of sectional view (conventional art) of electricity programming 3D-ROM (3D-EPROM) storage element.
Fig. 3 A and Fig. 3 B is two kinds of sectional views (conventional art) representing masking film program 3D-ROM (3Dm-ROM) storage element of " 0 " and " 1 " respectively.
Fig. 4 is a kind of security type 3Dm-ROM (3Dm-ROM
s) block diagram.
Fig. 5 is another kind of 3Dm-ROM
sblock diagram.
Fig. 6 is a kind of 3Dm-ROM
sthe sectional view of chip.
Fig. 7 is this 3Dm-ROM
sthe top view of chip, it only shows 3Dm-ROM array and peripheral circuit thereof.
Fig. 8 A-Fig. 8 C describes 3Dm-ROM in Fig. 7
sthe multiple substrate layout block diagram of chip after removing 3Dm-ROM array.
Fig. 9 is a kind of 3Dm-ROM
sthe sectional view of module.
Figure 10 AA-Figure 10 BB describes 3Dm-ROM in two kinds of Fig. 9
sthe 3Dm-ROM chip of module and supporting chip.
Embodiment
Fig. 4 describes a kind of security type three-dimensional masking film program read-only memory (3Dm-ROM
s) 50.It contains a 3Dm-ROM20, unmasked programmable memory (NMP) 30 and an encryption logic 40.3Dm-ROM 20 stores magnanimity information.NMP30 storage key.The data 22 of magnanimity information are encrypted by key 32 by encryption logic 40, and its sense data 42 is 3Dm-ROM
soutput.
NMP 30 is a nonvolatile memory (NVM), and not by the logging data of masking film program mode, and adopts the modes such as optical, electrical, magnetic to write data.Key can write in NMP in process of production or after production run.The example of NMP comprises laser program read-only memory (laser-programmable ROM, referred to as LP-ROM) and electronically written storer.Here, electronically written storer comprises programmable read only memory (PROM, as the PROM based on antifuse, the PROM based on fuse), electric programming read-only memory (EPROM comprises 3D-EPROM), Electrically Erasable Read Only Memory (E
2pROM, comprises quick flashing).
Encryption logic 40 changes information data 22 with certain special algorithm, even if make undelegated user obtain the information of having encrypted, but because not knowing the method (as key) of deciphering, still cannot understand the content of information.Cryptographic algorithm can adopt PGP, AES, DES, Blowfish etc.Encryption logic 40 also can be a kind of data scrambler, and the pattern that it defines according to key 32 sorts to information data 22.In order to improve the efficiency of encryption logic 40, can only encrypt partial information data 22.
At same 3Dm-ROM
sin batch, its 3Dm-ROM stores identical data.By writing different keys in different NMP, and with the information encryption of depositing in different double secret key 3Dm-ROM, to realize strong copyright protection.Such as say, two 3Dm-ROM
sall store identical information in the 3Dm-ROM of (A and B), but their NMP stores different key.Like this, even if a 3Dm-ROM
skey (as A) be cracked, other stores the 3Dm-ROM of same information
sthe confidentiality of (as B) also can not be on the hazard.Generally speaking, 3Dm-ROM
sthe copyright protection provided is better than 3Dm-ROM, suitable with 3D-EPROM.Notice, although they all adopt print typing mode 3Dm-ROM
soptical memory (as DVD, BD) is better than to the copyright protection of magnanimity information.
Fig. 5 describes another kind of 3Dm-ROM
s50.It encrypts by file associated encryption and time correlation the copyright protection strengthened further magnanimity information.Embodiment in Fig. 5 contains 3Dm-ROM 20, NMP 30, key selects logic 34 and an encryption logic 40.3Dm-ROM 20 stores at least one data file 22a NMP 30 stores multiple key 32a, 32b ...Key selects logic 34 to select key based on input 36 (as file address, time or other information).
When selecting key based on file address, different data files can by different secret key encryption.Such as say, data file 22a is encrypted by key 32a, and data file 22b is encrypted by key 32b.When based on selection of time key, data file can in different time sections by different secret key encryption.Such as say, encrypted by key 32a at time period A data file 22a, encrypted by key 32c at time period B data file 22a.These new functions make to crack 3Dm-ROM
sbecome more difficult, thus further enhance its copyright protection.
Fig. 6 is a kind of 3Dm-ROM
sthe sectional view of chip 50C.In this embodiment, 3Dm-ROM 20, NMP 30 and encryption logic 40 are integrated in inside a chip.Because all data cube computation are all positioned at chip 50C, data stream is not easily monitored, and therefore this embodiment can provide powerful copyright protection.Here, 3Dm-ROM array 20 to be positioned on substrate 00 and by multiple contact channels hole (1av, 3av ...) be coupled with substrate 00, it contains multiple accumulation layer (100,200 ...).3Dm-ROM can adopt multidigit unit to improve storage density (see denomination of invention be " multidigit unit three-dimensional masking film program storer ", application number is the Chinese patent application of 201010194950.4), namely by increasing resistive film 7x or injecting resistive element 7y to realize each storage element (as 8aa-8da ...) store the object of multiple data bit.3Dm-ROM can also adopt mixolimnion structure to improve storage density (see denomination of invention be " hybrid layer three-dimensional storage ", application number is the Chinese patent application of 200610162698.2), namely address selection line is (as 2a-2d ...) shared by adjacent storage layers (as 100 and 200).At the technology node of F=20nm, the 3Dm-ROM that contains 8 accumulation layers, each storage element stores 2 data bit, its storage density can reach:
Data bit/the 4F of each storage element storage of number * of accumulation layer
2=8*2/ (4*20nm
2)=1Tb/cm
2.
At the 3Dm-ROM of Fig. 6
sin chip 50C, NMP 30 and encryption logic 40 can be compared to 3Dm-ROM array 20 most closer to substrate 00, and namely in process of production, they are formed prior to 3Dm-ROM array 20.Because its basic composition unit is transistor 33, therefore NMP 30 and encryption logic 40 are positioned at substrate 00 li at least partly.Here, " in substrate " can be understood as " in substrate " or " on substrate ".In this embodiment, NMP 30 is laser program read-only memories (LP-ROM).It contains a laser programmable fuse 35, and this fuse 35 can be programmed in process of production (as before formation 3Dm-ROM array).By to its irradiating laser, a gap 37 in fuse 35, can be formed.Whether the existence in this gap 37 determines the state of LP-ROM storage element.Because LP-ROM does not need high voltage programming transistor, its introducing is minimum to technogenic influence, and therefore it is one of first-selection of NMP.
Fig. 7 is this 3Dm-ROM
sthe top view of chip 50C, which show a 3Dm-ROM array 20A (oblique line portion) and peripheral circuit 28 thereof.Fig. 8 A-Fig. 8 C describes this 3Dm-ROM
sthe multiple substrate layout block diagram of chip 50C after removing 3Dm-ROM array 20A.In fig. 8 a, NMP 30A and encryption logic 40 are positioned on substrate 00, but are positioned at outside 3Dm-ROM array 20A.In the fig. 8b, NMP 30A is positioned at below 3Dm-ROM array 20A, and encryption logic 40 is positioned at outside 3Dm-ROM array 20A, and it can be shared by multiple 3Dm-ROM array.In Fig. 8 C, NMP30A and encryption logic 40A is all positioned at below 3Dm-ROM array 20A.In Fig. 8 B and Fig. 8 C, at least NMP 30A is positioned at below 3Dm-ROM array 20A.In order to find out the key stored in NMP 30A, need 3Dm-ROM array 20A to peel off, this makes piracy lose meaning.Here, Fig. 7-Fig. 8 C and Figure 10 AA-Figure 10 BB is only schematic diagram, and they do not represent the domain of any reality.Actual domain needs to decide according to design, and has a lot of possibility.
Fig. 9 is a kind of 3Dm-ROM
sthe sectional view of module 50M.In this embodiment, 3Dm-ROM 20, NMP 30 and encryption logic 40 are integrated in a protectiveness encapsulation 50M.It contains at least one 3Dm-ROM chip 52A... and one supporting chip 54.Each 3Dm-ROM chip (as 52A) is containing multiple accumulation layer.Supporting chip 54 can be control chip.All these chips (52A ..., 54) be preferably stacked, intercoupled by wire 56, be then placed in a protectiveness shell 58.The protectiveness material 59 as mold pressing resin etc. is filled with in this protectiveness shell 58.
Figure 10 AA-Figure 10 BB describes two kinds of 3Dm-ROM
s3Dm-ROM chip 52A in module 50M and supporting chip 54.In Figure 10 AA and Figure 10 AB, 3Dm-ROM chip 52A contains at least one 3Dm-ROM array 20x (oblique line portion) and at least one NMP array 30x.NMP array 30x is positioned at (Figure 10 AA) below 3Dm-ROM array 20x.Meanwhile, supporting chip 54 is containing encryption logic 40 (Figure 10 AB).In Figure 10 BA and Figure 10 BB, 3Dm-ROM chip 52A contains at least one 3Dm-ROM array 20y (Figure 10 BA), and supporting chip 54 is containing at least one NMP array 30y and encryption logic 40 (Figure 10 BB).In the above-described embodiments, because 3Dm-ROM, NMP and encryption logic are arranged in a protectiveness encapsulation 50M, this embodiment can provide stronger copyright protection.
Although above instructions specifically describes examples more of the present invention, those skilled in the art should understand, and not away under the prerequisite of the spirit and scope of the present invention, can change form of the present invention and details.Such as say, 3D-ROM not only can based on diode, also can based on transistor.This does not hinder them to apply spirit of the present invention.Therefore, except the spirit according to additional claims, the present invention should not be subject to any restriction.
Claims (10)
1. a security type three-dimensional masking film program read-only memory 3Dm-ROM
s(50C), it is characterized in that containing:
One containing the Semiconductor substrate (00) of transistor (33);
At least one three-dimensional masking film program read-only memory 3Dm-ROM array (20), should
3Dm-ROM array (20) containing the read-only accumulation layer of at least one masking film program (100), this storage
Layer (100) is stacked on this substrate (00) top and is coupled with it by contact channels mouth (1av), should
3Dm-ROM array (20) stores magnanimity information;
One unmasked programmable memory NMP (30), this NMP (30) is positioned between described substrate (00) and described accumulation layer (100), and storage key (32a); With
One encryption logic (40), this encryption logic (40) by key (32a) at least part of data encryption in described magnanimity information.
2. security type three-dimensional masking film program read-only memory according to claim 1, is further characterized in that: in described NMP (30), adopt light mode to write described key.
3. security type three-dimensional masking film program read-only memory according to claim 2, is further characterized in that: described NMP (30) is a laser program read-only memory.
4. security type three-dimensional masking film program read-only memory according to claim 1, is further characterized in that: in described NMP (30), adopt power mode write described key.
5. security type three-dimensional masking film program read-only memory according to claim 4, is further characterized in that: described NMP (30) is an electronically written storer.
6. security type three-dimensional masking film program read-only memory according to claim 1, is further characterized in that: in described NMP (30), adopt magnetic mode to write described key.
7. security type three-dimensional masking film program read-only memory according to claim 1, is further characterized in that: same batch of 3Dm-ROM
sin different 3Dm-ROM
sadopt different secret key encryption.
8. security type three-dimensional masking film program read-only memory according to claim 1, is further characterized in that and contains: a key selects logic (34).
9. security type three-dimensional masking film program read-only memory according to claim 8, is further characterized in that: this key selects logic to select key according to file address.
10. security type three-dimensional masking film program read-only memory according to claim 8, is further characterized in that: this key selects logic according to selection of time key.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110042197.1A CN102637457B (en) | 2011-02-14 | 2011-02-14 | Confidential type 3Dm-ROM (three-dimensional mask programmable-read only memory) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110042197.1A CN102637457B (en) | 2011-02-14 | 2011-02-14 | Confidential type 3Dm-ROM (three-dimensional mask programmable-read only memory) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102637457A CN102637457A (en) | 2012-08-15 |
| CN102637457B true CN102637457B (en) | 2015-06-17 |
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ID=46621821
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110042197.1A Expired - Fee Related CN102637457B (en) | 2011-02-14 | 2011-02-14 | Confidential type 3Dm-ROM (three-dimensional mask programmable-read only memory) |
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| CN (1) | CN102637457B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105788642A (en) * | 2015-01-11 | 2016-07-20 | 杭州海存信息技术有限公司 | Solid state compact disc and solid storage server |
| CN105989864A (en) * | 2015-02-26 | 2016-10-05 | 杭州海存信息技术有限公司 | Confidential recording memory |
| CN115794730A (en) * | 2018-12-10 | 2023-03-14 | 杭州海存信息技术有限公司 | Discrete three-dimensional processor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4972478A (en) * | 1989-07-03 | 1990-11-20 | Motorola, Inc. | Soft logic cryptographic circuit |
| JP2003287875A (en) * | 2002-01-24 | 2003-10-10 | Hitachi Ltd | Method of manufacturing mask and method of manufacturing semiconductor integrated circuit device |
| US20070076509A1 (en) * | 2002-08-28 | 2007-04-05 | Guobiao Zhang | Three-Dimensional Mask-Programmable Read-Only Memory |
| US7170315B2 (en) * | 2003-07-31 | 2007-01-30 | Actel Corporation | Programmable system on a chip |
| US9008317B2 (en) * | 2007-04-10 | 2015-04-14 | International Business Machines Corporation | Key encryption and decryption |
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Address after: 610041 B-36, 6 Yongfeng Road, Chengdu, Sichuan Patentee after: Zhang Guobiao Address before: 610051 5A-001 box 59, Jianshe Road, Sichuan, Chengdu, China Patentee before: Zhang Guobiao |
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