CN102628710A - Porous nanometer silicon visible light detector and preparation method thereof - Google Patents
Porous nanometer silicon visible light detector and preparation method thereof Download PDFInfo
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- CN102628710A CN102628710A CN2012101293829A CN201210129382A CN102628710A CN 102628710 A CN102628710 A CN 102628710A CN 2012101293829 A CN2012101293829 A CN 2012101293829A CN 201210129382 A CN201210129382 A CN 201210129382A CN 102628710 A CN102628710 A CN 102628710A
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Abstract
The invention discloses a porous nanometer silicon visible light detector and a preparation method thereof. The porous nanometer silicon visible photo-detector provided in the invention adopts a technology that nanometer silicon semiconductor is contacted with an electrolyte, by using the technology received photon signals of visible light are converted into electrical signals. A speed of the porous nanometer silicon visible light detector responding to the visible light is rapid, a photovoltage is high, and stability is good. The visible light detector is suitable for making photo-detector and photoswitch.
Description
One, technical field
The present invention relates to a kind of porous nano silicon visible-light detector and preparation method thereof, belong to sensing and field of measuring technique.
Two, background technology
In the semiconductor light detector, it is very important that the detector of visible light seems.Common visible-light detector has silicon photoelectric diode, PIN photodiode, avalanche photodide etc., and they are mainly made with the SiGe semiconductor material.In the process of making these photodiodes, need use complicated phosphorus boron diffusion technology to form PN junction, need high-temperature oxydation to form the silicon dioxide antireflecting film, also need filming equipment under vacuum environment, to make electrode.In order to overcome the shortcoming that complex process, mechanical discipline are expensive, need the high temperature high vacuum, the present invention provides a kind of porous nano silicon visible-light detector and preparation method thereof, and preparation condition is gentle, does not need high temperature, does not need vacuum electrode evaporation.
Three, summary of the invention
The present invention provides a kind of porous nano silicon visible-light detector and preparation method thereof, and the technology that adopts the nano-silicon semiconductor to contact with electrolytic solution does not need vacuum electrode evaporation, and enabling the light photon conversion of signals that receives is electric signal.
Porous nano silicon visible-light detector of the present invention; It is characterized in that: contain electrolytic solution in the said porous nano silicon visible-light detector; It is to be the elementary cell of photon receiver and as an electrode of detector with the porous nano silicon thin film; With wire gauze another electrode, be the photoelectric device of electric signal with the light photon conversion of signals that receives as said porous nano silicon visible-light detector.
The preparation method of porous nano silicon visible-light detector of the present invention, its concrete steps are following:
1) silicon chip of selecting the single or double polishing is as backing material, a vapor deposition layer of aluminum film, and thermal treatment forms Ohmic contact;
2) above-mentioned silicon substrate material is put in the liquid of hydrofluoric acid containing carried out galvanic corrosion, form the porous nano silicon thin film;
3) with above-mentioned porous nano silicon thin film as an electrode material, as another electrode material, between said two electrodes, inject electrolytic solution with wire gauze, encapsulation forms described porous nano silicon visible-light detector;
4) between two electrodes of described porous nano silicon visible-light detector, add bias voltage, when shining described porous nano silicon thin film with visible light beam, this detector is an electric signal with the light photon conversion of signals that receives.
Porous nano silicon visible-light detector of the present invention, it is characterized in that: the photon in the whole visible range has response; Working temperature is at subzero 60 degrees centigrade to 200 degrees centigrade above freezing.
The porous nano silicon thin film of porous nano silicon visible-light detector of the present invention is to be the semiconductor porous film of basic framework with the nano-silicon; Its thickness is between 1 nanometer to 1000 micron; It is characterized in that: have conductive characteristic, its resistivity is between the 0.002-1000 ohmcm.
The wire gauze of porous nano silicon visible-light detector of the present invention includes but not limited to it is characterized in that tinsel, quoit, metal bar and the wire netting processed with metals such as platinum, gold, copper and alloy thereof: have conductive capability and as an electrode of porous nano silicon visible-light detector; Has the ability that lets part or all of incident light pass through.
The electrolytic solution of porous nano silicon visible-light detector includes but not limited to organic electrolyte and aqueous electrolyte.
Four, description of drawings
Fig. 1 is that the photovoltage of the hole nano-silicon visible-light detector for preparing of the present invention is with light application time variation relation figure.
Fig. 2 is the photovoltage that the porous nano silicon visible-light detector for preparing of the present invention produces during with the batch (-type) radiation of visible light.
Five, embodiment
In this embodiment with p type silicon be feedstock production porous nano silicon, to make electrolytic solution, do electrode with the platinum silk screen with potassium chloride solution be example explaination porous nano silicon visible-light detector and preparation method thereof.
The p type silicon chip of selecting single-sided polishing is as backing material; After back side vapor deposition layer of aluminum film, thermal treatment form Ohmic contact, be placed on by concentration be 40% hydrofluorite and concentration be 95% ethanol by 1: 1 equal-volume than in the electrolytic solution that is mixed with; Current density is 3 milliamperes every square centimeter; Switched on 60 minutes, and took out cleaning-drying, obtain the porous nano silicon thin film; As working electrode, is that the potassium chloride aqueous electrolyte of 1M contact with concentration with said porous nano silicon thin film, does electrode has been processed porous nano silicon visible-light detector after the encapsulation with the platinum silk screen.When shining porous nano silicon visible-light detector with indoor general visible, said detector just has photovoltage and electric current to produce; Fig. 1 is the variation relation figure of the photovoltage of porous nano silicon visible-light detector of the present invention with light application time, and the result shows that the photovoltage of porous nano silicon visible-light detector reaches 1 volt, and very stable.When with general room visible light batch (-type) irradiation porous nano silicon visible-light detector, porous nano silicon visible-light detector will be given birth to voltage and current by the batch (-type) real estate third contact of a total solar or lunar eclipse; The photovoltage that Fig. 2 produces during with the batch (-type) radiation of visible light for porous nano silicon visible-light detector of the present invention.
The preparation condition of porous nano silicon visible-light detector is gentle, does not need high temperature, does not need vacuum electrode evaporation, and is fast to the response speed of visible light, is applicable to and does visible-light detector and photoswitch.
Claims (6)
1. porous nano silicon visible-light detector; It is characterized in that: contain electrolytic solution in the said porous nano silicon visible-light detector; It is to be the elementary cell of photon receiver and as an electrode of detector with the porous nano silicon thin film; With wire gauze another electrode, be the photoelectric device of electric signal with the light photon conversion of signals that receives as said porous nano silicon visible-light detector.
2. the preparation method of porous nano silicon visible-light detector as claimed in claim 1, its concrete steps are following:
1) silicon chip of selecting the single or double polishing is as backing material, a vapor deposition layer of aluminum film, and thermal treatment forms Ohmic contact;
2) above-mentioned silicon substrate material is put in the liquid of hydrofluoric acid containing carried out galvanic corrosion, form the porous nano silicon thin film;
3) with above-mentioned porous nano silicon thin film as an electrode material, as another electrode material, between said two electrodes, inject electrolytic solution with wire gauze, encapsulation forms described porous nano silicon visible-light detector;
4) between two electrodes of described porous nano silicon visible-light detector, add bias voltage, when shining described porous nano silicon thin film with visible light beam, this detector is an electric signal with the light photon conversion of signals that receives.
3. according to claim 1 or claim 2 porous nano silicon visible-light detector, it is characterized in that: the photon in the whole visible range has response; Working temperature is at subzero 60 degrees centigrade to 200 degrees centigrade above freezing.
4. according to claim 1 or claim 2 porous nano silicon thin film is to be the semiconductor porous film of basic framework with the nano-silicon; Its thickness is between 1 nanometer to 1000 micron; It is characterized in that: have conductive characteristic, its resistivity is between the 0.002-1000 ohmcm.
5. include but not limited to it is characterized in that tinsel, quoit, metal bar and the wire netting processed with metals such as platinum, gold, copper and alloy thereof like the described wire gauze of claim 1-2: have conductive capability and as an electrode of porous nano silicon visible-light detector; Has the ability that lets part or all of incident light pass through.
6. according to claim 1 or claim 2 electrolytic solution includes but not limited to organic electrolyte and aqueous electrolyte.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101293829A CN102628710A (en) | 2012-04-28 | 2012-04-28 | Porous nanometer silicon visible light detector and preparation method thereof |
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| CN2012101293829A CN102628710A (en) | 2012-04-28 | 2012-04-28 | Porous nanometer silicon visible light detector and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109768062A (en) * | 2019-01-11 | 2019-05-17 | 惠科股份有限公司 | A kind of X-ray detector and the display equipment with it |
| US11398520B2 (en) | 2019-01-11 | 2022-07-26 | HKC Corporation Limited | X-ray detector, method for manufacturing x-ray detector, and medical equipment |
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| US20030020018A1 (en) * | 2001-01-19 | 2003-01-30 | Huey-Liang Hwang | Fabrication of amorphous silicon/amorphous silicon germanium NI1PI2N infrared position detectors |
| US6543693B1 (en) * | 1995-02-27 | 2003-04-08 | Symbol Technologies, Inc. | Bar code readers using surface emitting laser diode |
| CN201222035Y (en) * | 2008-06-18 | 2009-04-15 | 上海安誉智能科技有限公司 | Detection sensor for infrared gas |
| CN201368843Y (en) * | 2008-11-21 | 2009-12-23 | 聚光科技（杭州）有限公司 | Detecting device for chlorine gas and chlorine hydride during PVC production |
| CN102226715A (en) * | 2011-04-08 | 2011-10-26 | 北京师范大学 | Visible photoelectrochemical detector based on one-dimensional silicon nanostructure array |
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2012
- 2012-04-28 CN CN2012101293829A patent/CN102628710A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6543693B1 (en) * | 1995-02-27 | 2003-04-08 | Symbol Technologies, Inc. | Bar code readers using surface emitting laser diode |
| US20030020018A1 (en) * | 2001-01-19 | 2003-01-30 | Huey-Liang Hwang | Fabrication of amorphous silicon/amorphous silicon germanium NI1PI2N infrared position detectors |
| CN201222035Y (en) * | 2008-06-18 | 2009-04-15 | 上海安誉智能科技有限公司 | Detection sensor for infrared gas |
| CN201368843Y (en) * | 2008-11-21 | 2009-12-23 | 聚光科技（杭州）有限公司 | Detecting device for chlorine gas and chlorine hydride during PVC production |
| CN102226715A (en) * | 2011-04-08 | 2011-10-26 | 北京师范大学 | Visible photoelectrochemical detector based on one-dimensional silicon nanostructure array |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109768062A (en) * | 2019-01-11 | 2019-05-17 | 惠科股份有限公司 | A kind of X-ray detector and the display equipment with it |
| US11398520B2 (en) | 2019-01-11 | 2022-07-26 | HKC Corporation Limited | X-ray detector, method for manufacturing x-ray detector, and medical equipment |
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Application publication date: 20120808 |