CN102617141A - Intermediate-temperature sintered microwave dielectric ceramic - Google Patents

Intermediate-temperature sintered microwave dielectric ceramic Download PDF

Info

Publication number
CN102617141A
CN102617141A CN2012100973806A CN201210097380A CN102617141A CN 102617141 A CN102617141 A CN 102617141A CN 2012100973806 A CN2012100973806 A CN 2012100973806A CN 201210097380 A CN201210097380 A CN 201210097380A CN 102617141 A CN102617141 A CN 102617141A
Authority
CN
China
Prior art keywords
microwave
raw material
ball
medium ceramics
sintering temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012100973806A
Other languages
Chinese (zh)
Inventor
李玲霞
廖擎玮
任翔
孟庆磊
王洪茹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin University
Original Assignee
Tianjin University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin University filed Critical Tianjin University
Priority to CN2012100973806A priority Critical patent/CN102617141A/en
Publication of CN102617141A publication Critical patent/CN102617141A/en
Pending legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

The invention discloses intermediate-temperature sintered microwave dielectric ceramic, which comprises raw material components in the molar percentage content of MgTiNb2O8. The preparation comprises the following steps of: proportioning; mixing; drying; sieving; calcining at 780 DEG C for 3 hours to synthesize a clinker; pressing into blank; and sintering at 1,100-1,200 DEG C to prepare the MgTiNb2O8 microwave dielectric ceramic. According to the intermediate-temperature sintered microwave dielectric ceramic, the sintering temperature is low, the quality factor is high and is 36,000-60,000 GHz, the dielectric constant is 28-32, the temperature stability is good, the resonant frequency temperature coefficient is -7.4-31*10<-6>/ DEG C; and the intermediate-temperature sintered microwave dielectric ceramic is widely applied to each field of microwave technology.

Description

The intermediate sintering temperature microwave-medium ceramics
Technical field
The invention belongs to electronic information material and components and parts field, relate in particular to a kind of with MgTiNb 2O 8Novel intermediate sintering temperature microwave dielectric ceramic materials for chemical formula.
Technical background
Be accompanied by land mobile communication, trailer-mounted radar, direct satellite broadcasting TV, Global Positioning System microwave application technology rapid development such as (GPS), high-endization of frequency, integrated, miniaturized and cost degradation have become the inexorable trend of microwave technology development.Can process dielectric resonator, dielectric filter, duplexer, microwave-medium antenna, dielectric resonator oscillator, Medium Wave Guide transmission line etc. with microwave ceramic material.These devices are widely used in the microwave technology every field.
Present most of high performance microwave medium ceramic material sintering temperature is all higher, has limited its widespread use greatly.And the low-temperature sintering research of high sintering temperature material is cost mostly with any sacrifice in performance.Therefore, research and the application facet of microwave dielectric ceramic materials in this area that has a high-performance intermediate sintering temperature has great advantage.
MgTiNb 2O 8Be ixiolite structure microwave dielectric ceramic materials, its sintering temperature lower (≤1200 ℃), and have good microwave dielectric property, also do not see relevant report of the present invention both at home and abroad.The present invention adopts conventional solid-state method, has prepared the MgTiNb of intermediate sintering temperature 2O 8Microwave-medium ceramics, and tested its microwave dielectric property.
Summary of the invention
The objective of the invention is to adapt to electronic information technology constantly to high frequencyization and digitizing direction development need, the MgTiNb of the novel intermediate sintering temperature of a kind of temperature stability height, medium dielectric constant microwave medium, high Qf value is provided 2O 8Microwave-medium ceramics.
The present invention is achieved through following technical scheme.
Intermediate sintering temperature microwave-medium ceramics of the present invention, feed composition and mole percent level thereof are MgTiNb 2O 8
Its preparation process is following:
(1) with raw material MgO, Nb 2O 5, TiO 2Press MgTiNb respectively 2O 8The chemical formula weigh batching;
(2) the above-mentioned chemical feedstocks that configures is mixed, put into ball grinder, add zirconia ball and deionized water, raw material: deionized water: the mass ratio of zirconium ball is 1: 1: 1.2, and ball milling 1~12 hour is dried the raw material behind the ball milling in infrared drying oven, sieve;
(3) powder that step (2) is mixed is calcined 3 hours synthetic frits at 780 ℃;
(4) be that 0.35~0.75% Z 150PH is put into ball grinder with adding mass percent in step (3) frit, add zirconia ball and deionized water, ball milling 4~8 hours sieves after the oven dry, is pressed into the cylinder shape base substrate of Φ 10mm * 5mm again with powder compressing machine;
(5) with step (4) cylinder shape base substrate in 1100~1200 ℃ of sintering 2~6 hours, make MgTiNb 2O 8Microwave-medium ceramics;
(6) with the microwave dielectric property of network analyzer test microwave-medium ceramics.
The raw material of said step (1) is a purity greater than 99.9% analytical pure raw material.
Raw material behind the ball milling of said step (2) is 100~120 ℃ of oven dry in infrared drying oven.
The base substrate of said step (4) is the cylinder shape base substrate of Φ 10mm * 5mm, and the gauge pressure of tabletting machine is 6~10MPa.
The invention has the beneficial effects as follows, a kind of MgTiNb of intermediate sintering temperature is provided 2O 8Microwave-medium ceramics, its sintering temperature is low, is 1100~1200 ℃, and specific inductivity is 28~32, and quality factor are high, are 36,000~60,000GHz, temperature stability is good, and temperature coefficient of resonance frequency is-7.4~31 * 10 -6/ ℃.
Embodiment
Below in conjunction with specific embodiment the present invention is further described.
The present invention adopts purity greater than 99.9% analytical pure raw material, according to MgTiNb 2O 8Stoichiometric ratio prepare burden, mix; In mixing raw material: deionized water: the mass ratio of zirconium ball is that 1: 1: 1.2 ratio adds in the nylon ball grinder; At rotating speed is ball milling 1~12 hour on the 400r/min planetary ball mill, in the 1500W infrared drying oven in 100~120 ℃ of oven dry; In 780 ℃ of pre-burning 3h, make frit; In this frit, adding mass percent is that 0.35~0.75% Z 150PH is put into ball grinder; Add zirconia ball and deionized water; Ball milling 4~8 hours sieves after the oven dry, is pressed into the cylinder shape base substrate of Φ 10mm * 5mm again with the pressure of 6~10MPa with powder compressing machine; The cylinder shape base substrate in 1100~1200 ℃ of sintering 2~6 hours, is made microwave-medium ceramics.
The proportioning raw materials of the specific embodiment of the invention is: 1.0442 gram MgO, 6.8866 gram Nb 2O 5, 2.0692 the gram TiO 2
The related process parameter of the foregoing description and the test result of microwave dielectric property see table 1 for details.
Table 1
Figure BDA0000150559500000021
Figure BDA0000150559500000031
The detection method of the embodiment of the invention is following:
1. the diameter of sample and thickness use milscale to measure.
2. by Agilent 8720ES network analyzer; Adopt open type chamber parallel plate method to measure the specific inductivity of prepared cylindrical ceramic material; Test fixture is put into the high cold cycle incubator of ESPEC MC-710F type carry out the measurement of temperature coefficient of resonance frequency, TR is that 25-85 ℃ of test frequency is in the 8-10.5GHz scope.
3. adopt enclosed chamber method to measure the quality factor of prepared cylindrical ceramic sample, test frequency is in the 6.2-7.1GHz scope.
The present invention is not limited to the foregoing description, and the variation of a lot of details is possible, but therefore this do not run counter to scope of the present invention and spirit.

Claims (4)

1. intermediate sintering temperature microwave-medium ceramics, feed composition and mole percent level thereof are MgTiNb 2O 8
Its preparation process is following:
(1) with raw material MgO, Nb 2O 5, TiO 2Press MgTiNb respectively 2O 8The chemical formula weigh batching;
(2) the above-mentioned chemical feedstocks that configures is mixed, put into ball grinder, add zirconia ball and deionized water, raw material: deionized water: the mass ratio of zirconium ball is 1: 1: 1.2, and ball milling 1~12 hour is dried the raw material behind the ball milling in infrared drying oven, sieve;
(3) powder that step (2) is mixed is calcined 3 hours synthetic frits at 780 ℃;
(4) be that 0.35~0.75% Z 150PH is put into ball grinder with adding mass percent in step (3) frit, add zirconia ball and deionized water, ball milling 4~8 hours sieves after the oven dry, is pressed into the cylinder shape base substrate of Φ 10mm * 5mm again with powder compressing machine;
(5) with step (4) cylinder shape base substrate in 1100~1200 ℃ of sintering 2~6 hours, make MgTiNb 2O 8Microwave-medium ceramics;
(6) with the microwave dielectric property of network analyzer test microwave-medium ceramics.
2. according to the intermediate sintering temperature microwave-medium ceramics of claim 1, it is characterized in that the raw material of said step (1) is a purity greater than 99.9% analytical pure raw material.
3. according to the intermediate sintering temperature microwave-medium ceramics of claim 1, it is characterized in that the raw material behind the ball milling of said step (2) is 100~120 ℃ of oven dry in infrared drying oven.
4. according to the intermediate sintering temperature microwave-medium ceramics of claim 1, it is characterized in that the base substrate of said step (4) is the cylinder shape base substrate of Φ 10mm * 5mm, the gauge pressure of tabletting machine is 6~10MPa.
CN2012100973806A 2012-04-05 2012-04-05 Intermediate-temperature sintered microwave dielectric ceramic Pending CN102617141A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012100973806A CN102617141A (en) 2012-04-05 2012-04-05 Intermediate-temperature sintered microwave dielectric ceramic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012100973806A CN102617141A (en) 2012-04-05 2012-04-05 Intermediate-temperature sintered microwave dielectric ceramic

Publications (1)

Publication Number Publication Date
CN102617141A true CN102617141A (en) 2012-08-01

Family

ID=46557416

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012100973806A Pending CN102617141A (en) 2012-04-05 2012-04-05 Intermediate-temperature sintered microwave dielectric ceramic

Country Status (1)

Country Link
CN (1) CN102617141A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110655402A (en) * 2019-10-14 2020-01-07 天津大学 Medium-temperature sintered rutile-like microwave dielectric ceramic material
CN110818412A (en) * 2019-10-14 2020-02-21 天津大学 Titanium-based non-stoichiometric microwave dielectric ceramic material
CN114751734A (en) * 2022-04-29 2022-07-15 电子科技大学 Dielectric material for low-temperature sintered Mg-Ti-Nb multilayer ceramic capacitor and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1761004A (en) * 2005-11-16 2006-04-19 天津大学 High frequency thermostable porcelain of capacitor, and preparation method
CN101531528A (en) * 2009-04-13 2009-09-16 天津大学 Method for preparing magnesium niobate microwave ceramic powder on the basis of sol-gel technique
CN101857435A (en) * 2010-06-11 2010-10-13 天津大学 Medium-temperature sintered composite niobate high-frequency medium ceramic and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1761004A (en) * 2005-11-16 2006-04-19 天津大学 High frequency thermostable porcelain of capacitor, and preparation method
CN101531528A (en) * 2009-04-13 2009-09-16 天津大学 Method for preparing magnesium niobate microwave ceramic powder on the basis of sol-gel technique
CN101857435A (en) * 2010-06-11 2010-10-13 天津大学 Medium-temperature sintered composite niobate high-frequency medium ceramic and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110655402A (en) * 2019-10-14 2020-01-07 天津大学 Medium-temperature sintered rutile-like microwave dielectric ceramic material
CN110818412A (en) * 2019-10-14 2020-02-21 天津大学 Titanium-based non-stoichiometric microwave dielectric ceramic material
CN114751734A (en) * 2022-04-29 2022-07-15 电子科技大学 Dielectric material for low-temperature sintered Mg-Ti-Nb multilayer ceramic capacitor and preparation method thereof
CN114751734B (en) * 2022-04-29 2023-07-28 电子科技大学 Dielectric material for low-temperature sintered Mg-Ti-Nb multilayer ceramic capacitor and preparation method thereof

Similar Documents

Publication Publication Date Title
CN102153343B (en) Method for preparing high Q-value magnesium titanate base microwave medium ceramics by adopting reactive sintering method
CN102603297B (en) Novel low-temperature sintered microwave dielectric ceramic and preparation method thereof
CN104692795B (en) A kind of ultra-low loss magnesium titanate lithium microwave dielectric ceramic materials and preparation method thereof
CN104310980A (en) Microwave medium ceramic material and preparation method thereof
CN101260001A (en) High-Q microwave dielectric ceramic material and preparing method thereof
CN110092655B (en) Barium samarium-titanium series low-loss microwave dielectric ceramic and preparation method thereof
CN105272245B (en) One kind prepares low-loss zinc zirconium niobium series microwave dielectric ceramic using reaction sintering
CN102408202A (en) Microstrip antenna composite substrate material and its preparation method
CN105036741A (en) Microwave dielectric ceramic material high in quality factor and preparation method thereof
CN104844193A (en) Lithium-magnesium-titanium-based microwave dielectric ceramic with high Q value and low temperature sintering realization method thereof
CN101857435A (en) Medium-temperature sintered composite niobate high-frequency medium ceramic and preparation method thereof
CN108439973A (en) A kind of high q-factor high-dielectric constant microwave-medium ceramics material and preparation method thereof
CN103864426B (en) A kind of intermediate sintering temperature temperature-stabilized microwave medium ceramic material
CN102992762A (en) Barium-cobalt-zinc-niobium based microwave dielectric ceramics and preparation method thereof
CN101323521A (en) Microwave dielectric ceramic material
CN104341148A (en) Method for improving value Q by adopting Li2MgTi3O8-series microwave dielectric ceramics Sn4&lt;+&gt; to replace B-site Ti4&lt;+&gt;
CN101823879A (en) Scheelite type molybdenum-based ultralow temperature-sintered microwave dielectric ceramic material and preparation method thereof
CN102617142A (en) Novel medium-temperature-sintering temperature stabilization type microwave dielectric ceramic
CN102093053A (en) New microwave medium ceramic material prepared through middle-temperature sintering
CN102617141A (en) Intermediate-temperature sintered microwave dielectric ceramic
CN103951427B (en) A kind of chip multilayer ceramic capacitor microwave dielectric ceramic materials
CN102219515A (en) Novel medium temperature sintered microwave dielectric ceramic material
CN105060878A (en) Microwave dielectric ceramic with low dielectric constant and high quality factor and preparation method thereof
CN102491744A (en) Low-loss microwave dielectric ceramic and preparation method thereof
CN102295457B (en) Low-loss Sm2O3-TiO2 microwave medium ceramic and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20120801

RJ01 Rejection of invention patent application after publication