CN102610892A - C-wave band magnetostatic surface wave 4-path channel device - Google Patents
C-wave band magnetostatic surface wave 4-path channel device Download PDFInfo
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- CN102610892A CN102610892A CN2012100788222A CN201210078822A CN102610892A CN 102610892 A CN102610892 A CN 102610892A CN 2012100788222 A CN2012100788222 A CN 2012100788222A CN 201210078822 A CN201210078822 A CN 201210078822A CN 102610892 A CN102610892 A CN 102610892A
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Abstract
The invention provides a C-wave band magnetostatic surface wave 4-path channel device, belongs to the technical field of radio frequency and microwave devices and particularly relates to a magnetostatic surface wave device. The invention invents the manufacture of the C-wave band (6 to 6GHz) magnetostatic surface wave 4-path channel device, which is a band-pass filter group realized by using the magnetostatic surface wave technology. The C-wave band magnetostatic surface wave 4-path channel device provided by the invention comprises the contents of design of a power divider, design of an energy converter, design of a bias magnetic field and manufacture of a cavity. The C-wave band magnetostatic surface wave 4-path channel device provided by the invention realizes the 4-path channel division, the center frequencies of the 4 path of channels are respectively 5.05GHz, 5.35GHz, 5.7GHz and 6GHz, in addition, the 3dB band width of each path of channel reaches 120MHz, and the insertion loss is smaller than 17dB. The C-wave band magnetostatic surface wave 4-path channel device realizes the requirements of multiple paths, low consumption and wide frequency of the channel device and finally reaches the application requirement.
Description
Technical field
The invention belongs to radio frequency and microwave device field, it is particularly related to magnetostatic wave theory and designs technology.
Background technology
From the eighties in last century till now, attract attention in the flourish whole world that makes of magnetostatic wave (MSW) device, present many developed countries concentrate one's energy especially, material resources research and development are made the MSW device to be used for military defense.The magnetostatic wave device of developing mainly comprises MSW delay line, MSW multiplex (MUX) device, MSW signal-to-noise enhancer and is used for MSW resonator and filter of gps system etc.The country of walking in the MSW frontline technology comprises the U.S., Russia, Ukraine, Britain, Japan, Italy etc., and wherein the highest country of MSW device development level is the U.S. and Russia, and they have realized the commercialization of magnetostatic wave delay line and filter.
Compare with developed countries, the development level of China MSW device is also lagging far behind, and is in the primary research stage, and its reason comprises: the backwardness of (1) production equipment and production technology causes realizing the preparation of high performance yig single crystal film; (2) inadequately improve cause the accurately characteristic of exosyndrome material inadequately by advanced person and detection system for testing of materials equipment; (3) deep not enough for the research of Dispersion Characteristics of Magnetostatic Wave and the transmission characteristic of magnetostatic wave in thin-film material; Cause to set up out the system of a whole set of device model design and emulation; All kinds of research reports to magnetostatic wave device also rest on the material devices parameter change and (comprise the transducer dimensions size; Material thickness, substrate thickness etc.) on the final Effect on Performance of device; (4) report of practicability device is few, makes the researcher get used to talking about stratagems on paper, and is difficult to start with from actual.
Although at present magnetostatic wave device be a passive device mostly, and is used for the national defence electronic applications more, theory and technology is complicated, upgrades slowlyer, and simultaneously, the development trend of magnetostatic wave device also must be expanded to high band more, can reach 100GHz in theory.Let magnetostatic wave bring into play to some extent in millimere-wave band, at first will guarantee to prepare the ferrite single crystal thin-film material of low-loss, high saturation and magnetic intensity, this also is the difficult problem that on research magnetostatic wave device road, must overcome from now on.
Summary of the invention
The technical problem that the present invention will solve mainly provides a kind of than low-loss and C (5-6GHz) the wave band magnetostatic surface wave 4 path channels devices with bigger bandwidth of operation.
Technical problem to be solved by this invention is how to realize 4 tunnel outputs of magnetostatic surface wave path channels device, widebandization.C-band magnetostatic surface wave 4 path channels devices are to be made up of power splitter, transducer and outer chamber, and on transducer, all need place YIG film and be biased magnetic field.
The excitation of magnetostatic surface wave of the present invention (MSSW) and communication process are to be positioned over the YIG film material between transducer; The effect that adds bias magnetic field through the bottom just can make the inner spinning electron of film around the bias magnetic field precession; Spinning electron receives the effect by the microwave signal of transducer input input simultaneously; Coupling between magnetic moment just can form MSSW at film surface in addition, and last MSSW induces electric current when reaching the transducer output port and exports with form of electromagnetic wave.
The present invention realizes 4 tunnel transmission of magnetostatic surface wave path channels device; Be to be divided into two-way through utilize a power divider will import microwave signal at input; On two branch roads, design 2 little band transducers more respectively and realize the output of signal, so just can realize the division of 4 path channels.
The centre frequency of magnetostatic surface wave path channels device of the present invention is to regulate through the size of control bias magnetic field, and the bandwidth of each channel also can be carried out tuning through changing magnetic direction.
Description of drawings
Fig. 1 is magnetostatic surface wave 4 path channels device circuit model figures provided by the present invention, and what the triangle in the model was represented is the yig single crystal film, and base plate bottom need add bias magnetic field;
Fig. 2 is the loss figure of power splitter emulation provided by the present invention;
Fig. 3 is transducer transducer port match simulation provided by the present invention figure as a result;
Fig. 4 is the corresponding radiation resistance figure of different magnetic field provided by the present invention;
Fig. 5 is the drawn figure of Auto CAD of outer chamber provided by the present invention.
Fig. 6 is channel device provided by the present invention (channel a 3) resolution chart
Embodiment
C-band magnetostatic surface wave 4 path channels devices of the present invention are to be made up of power splitter, transducer and outer chamber, and on transducer, all need place YIG film and be biased magnetic field.As shown in Figure 1 is the circuit model of C-band magnetostatic surface wave 4 path channels devices.What the power splitter among the figure adopted is the Wilkinson microstrip power divider; Because channel device design frequency scope is 5～6GHz; Its centre frequency f0=5.5GHz; Can calculate branch road Microstrip Length l=λ/4=5.4mm by ADS software, the little band characteristic impedance of branch road Z=Z0=70.7 Ω, corresponding live width d=0.21mm.The live width that port Impedance 50 Ω are corresponding is 0.48mm, and isolation resistance R=100 Ω comes to confirm each parameter of power splitter thus.Power splitter adopts the structure of single-unit can realize the five equilibrium of signal.Adopt power divider will import microwave signal and be divided into two-way, and then on two branch roads, design the output that 2 little band transducers are realized signal respectively, just can realize the division of 4 path channels.
The present invention all need place YIG film on 4 transducers; The YIG film material that adopts is to adopt the liquid phase epitaxial technique preparation; Its ferromagnetic resonance linewidth is 0.5Oe, and film thickness is 20 μ m, and saturation magnetization 4 π Ms=1750Gs bottom need add bias magnetic field.
The centre frequency of each channel of channel device of the present invention can be regulated through the size that changes bias magnetic field, and channel width also can be carried out tuning through changing magnetic direction.In order to realize the tuning of device centre frequency 5～6GHz, the scope of bias magnetic field H should be 1050Oe～1350Oe.
The present invention is at the main element of accomplishing C-band magnetostatic surface wave channel device: behind power splitter, bias magnetic field, YIG film and the little band transducer, need the outer chamber of design channel device, thereby realize the assembling and the framework of entire device.Inside cavity need design step in order to place Al
2O
3Substrate; Cavity bottom then needs 4 through holes to make the copper sheathing that magnet is housed be able to pass; The thickness that will consider dielectric substrate thickness and micro belt conductor in addition is with the particular location of definite transducer input with output port, thereby assurance SMA termination is connected precisely with the microstrip line mid point, thereby reduces loss; Also each needs a base plate so that device constitutes whole to cavity up and down simultaneously.
Claims (5)
1. C-band magnetostatic surface wave 4 path channels devices, it is to be made up of power splitter, transducer and outer chamber, and on transducer, all need place YIG film and be biased magnetic field.
2. magnetostatic surface wave 4 path channels devices as claimed in claim 1 is characterized in that, described microwave frequency band is at the magnetostatic surface wave 4 path channels devices of C-band.
3. C-band magnetostatic surface wave channel device as claimed in claim 1 is characterized in that described Wilkinson microstrip power divider.
4. C-band magnetostatic surface wave channel device as claimed in claim 1 is characterized in that, the YIG film material of described employing liquid phase epitaxial technique preparation.
5. C-band magnetostatic surface wave channel device as claimed in claim 1 is characterized in that, the described different bias magnetic fields radiation resistance corresponding with it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100788222A CN102610892A (en) | 2012-03-23 | 2012-03-23 | C-wave band magnetostatic surface wave 4-path channel device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100788222A CN102610892A (en) | 2012-03-23 | 2012-03-23 | C-wave band magnetostatic surface wave 4-path channel device |
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| CN102610892A true CN102610892A (en) | 2012-07-25 |
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| CN2012100788222A Pending CN102610892A (en) | 2012-03-23 | 2012-03-23 | C-wave band magnetostatic surface wave 4-path channel device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146931A (en) * | 2017-05-08 | 2017-09-08 | 华南理工大学 | A kind of adjustable micro-strip duplexer of four-way |
| RU2707756C1 (en) * | 2019-04-10 | 2019-11-29 | Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук | Controlled by electric field power divider on magnetostatic waves with filtration function |
| CN111095670A (en) * | 2017-08-02 | 2020-05-01 | 阿维科斯公司 | Transmission line bias resistor |
-
2012
- 2012-03-23 CN CN2012100788222A patent/CN102610892A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107146931A (en) * | 2017-05-08 | 2017-09-08 | 华南理工大学 | A kind of adjustable micro-strip duplexer of four-way |
| CN107146931B (en) * | 2017-05-08 | 2019-10-18 | 华南理工大学 | A kind of adjustable micro-strip duplexer of four-way |
| CN111095670A (en) * | 2017-08-02 | 2020-05-01 | 阿维科斯公司 | Transmission line bias resistor |
| CN111095670B (en) * | 2017-08-02 | 2022-01-11 | 阿维科斯公司 | Transmission line bias resistor |
| RU2707756C1 (en) * | 2019-04-10 | 2019-11-29 | Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук | Controlled by electric field power divider on magnetostatic waves with filtration function |
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Application publication date: 20120725 |