CN102593309A - Chip type light-emitting device and packaging structure thereof - Google Patents

Abstract

The invention relates to a chip type light-emitting device and a packaging structure thereof. The chip-type light emitting device includes: one or more light emitting semiconductors; and one or more frames disposed over the top of the light emitting semiconductor. By utilizing the technical scheme provided by the invention, the manufacturing yield can be improved and the manufacturing cost can be reduced.

Description

Chip-type light-emitting device and its packaging structure

technical field

The present invention relates to a light emitting device, in particular to a chip-type light emitting device (chip-type light emitting device) with a precisely coated wavelength conversion layer and its packaging structure.

Background technique

In the structure of known light-emitting diodes, in order to convert the wavelength of emitted light, a fluorescent layer is often coated on the light-emitting diodes, so the fluorescent layer is also called a wavelength conversion layer. However, since the coating amount of the fluorescent layer is difficult to be precisely controlled, the thickness of the fluorescent layer is often too thin or too thick, which reduces the manufacturing yield of the light emitting diode and wastes the manufacturing cost. Therefore, in order to improve the manufacturing yield and reduce the manufacturing cost, there is an urgent need for a light emitting device with a precisely coated wavelength conversion layer.

Contents of the invention

According to an embodiment of the present invention, a chip-type light emitting device is provided, comprising: one or more light emitting semiconductors; and one or more frames disposed above the top of the light emitting semiconductors.

According to another embodiment of the present invention, there is provided a packaging structure of the above-mentioned chip-type light-emitting device, including: a lead frame; an attachment layer disposed on the lead frame; a substrate disposed on the attachment layer above; the above-mentioned chip-type light-emitting device, coupled to the substrate; and one or more pads, disposed on the chip-type light-emitting device.

By using the technical solution provided by the invention, the manufacturing yield can be improved and the manufacturing cost can be reduced.

Description of drawings

FIG. 1 shows a schematic cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention;

FIG. 2 shows a schematic cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention;

3 shows a schematic cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention;

FIG. 4 shows a schematic cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention;

5 shows a schematic cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention;

6 shows a schematic cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention;

7 shows a schematic cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention;

FIG. 8 shows a schematic cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention;

FIG. 9 shows a schematic cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention;

FIG. 10 shows a schematic cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention;

11 shows a schematic cross-sectional view of a package structure of a chip-type light emitting device according to an embodiment of the present invention; and

FIG. 12 is a chart comparing correlated color temperature (CCT) distributions of a known package structure and the package structure of the present invention.

Reference number

100-chip light emitting device

101 wavelength conversion layer

102 frames

103 light-emitting semiconductor

104 wire

105 pads

106 substrates

200 chip type light emitting device

201 wavelength conversion layer

202 frame

203 light-emitting semiconductor

204 wire

205 solder pads

206 substrate

300 chip light emitting device

301 wavelength conversion layer

302 frame

303 light emitting semiconductor

303an type semiconductor layer

303b activation layer

303cp type semiconductor layer

304a first wire

304b second wire

305a first welding pad

305b second welding pad

306 substrate

307 reflective layer

400 chip type light emitting device

401 wavelength conversion layer

402 frame

403 light-emitting semiconductor

403an type semiconductor layer

403b activation layer

403cp type semiconductor layer

404a first welding pad

404b second welding pad

405a first contact

405b second contact

406 substrate

407 reflective layer

408 conductive area

500 chip type light emitting device

501 wavelength conversion layer

502 frame

503 light-emitting semiconductor

504 wire

505 welding pad

506 substrate

508 roughened (patterned) surface

1100 chip type light emitting device

1101 wavelength conversion layer

1102 frame

1103 light-emitting semiconductor

1104 wire

1105 welding pad

1106 substrate

1200 chip type light emitting device

1201a first wavelength conversion layer

1201b second wavelength conversion layer

1202a First frame

1202b Second frame

1203 light emitting semiconductor

1204 wire

1205 welding pad

1206 substrate

1300 chip type light emitting device

1301a first wavelength conversion layer

1301b second wavelength conversion layer

1302 frame

1303 light-emitting semiconductor

1304 wire

1305 welding pad

1306 substrate

1400 chip type light emitting device

1401a first wavelength conversion layer

1401b second wavelength conversion layer

1402 frame

1403 light-emitting semiconductor

1404 wire

1405 welding pad

1406 substrate

1500 chip light emitting devices

1501a first wavelength conversion layer

1501b second wavelength conversion layer

1502a First Frame

1502b second frame

1503a The first light-emitting semiconductor

1503b second light emitting semiconductor

1504a first wire

1504b Second wire

1505a first pad

1505b second pad

1506 substrate

2100 package structure

2101 wavelength conversion layer

2102 frame

2103 Light emitting semiconductors

2104 wire

2105 welding pad

2106 substrate

2110 transparent coating

2120 Attachment layer

2130 lead frame

Detailed ways

Other embodiments and advantages of the present invention will be more apparent from the following detailed description combined with the accompanying drawings to illustrate examples of the principles of the present invention.

FIG. 1 shows a schematic cross-sectional view of a chip-type light emitting device 100 according to an embodiment of the present invention. The light emitting device 100 in FIG. 1 is a vertical light emitting element. As shown in FIG. 1 , the light emitting device 100 comprises: a light emitting semiconductor 103 ; a frame 102 disposed on top of the light emitting semiconductor 103 ; a wavelength conversion layer 101 applied on the light emitting semiconductor 103 confined by the frame 102 . Light emitting device 100 is coupled to substrate 106 . However, the wavelength conversion layer 101 can also be applied to the light-emitting semiconductor 103 confined by the frame 102 after the light-emitting semiconductor 103 on which the frame 102 is disposed is coupled to the substrate 106. The following embodiments can also have Such characteristics. The substrate 106 may be an opaque substrate such as metal, ceramic, or semiconductor. Pads 105 are provided on the light emitting semiconductor 103 , and the pads 105 are connected to the wires 104 .

即，以重量计，荧光体颗粒的量∶

上述与玻璃混合的波长转换层是在具有约100℃至约500℃的范围的温度下被施加。波长转换层可具有例如但不限于凸面、凹面、平面、或角锥的形状，图1所示的波长转换层101即具有凸面形状。波长转换层101可具有约1微米至约200微米的厚度，较佳为约10微米至约100微米。发光装置100能够发射具有约200nm至约500nm的峰值波长范围的光。框架102是由一透明材料所制成，例如环氧树脂、硅酮树脂、聚酰亚胺树脂、玻璃、石英、压克力(acryl)树脂(例如聚甲基丙烯酸甲酯(PMMA，polymethylmethacrylate)等等)、聚碳酸酯(PC)树脂、SU-8光阻、BCB光阻、或聚对二甲苯(parylene)树脂。或者，框架102亦可为单一金属层或多重金属层。框架102可通过下列至少其中一种方法来配置：旋转涂布、浸渍涂布、化学气相沉积、热蒸发、以及电子束蒸发。框架102可具有约0.1微米至约200微米的厚度，较佳为约2微米至约100微米。此外，可将一光扩散层(未显示)配置在波长转换层101上。Heat treatment may be performed on the wavelength conversion layer 101, and the temperature of the heat treatment may be between about 60°C and about 300°C. The wavelength converting layer 101 is applied by at least one of the following methods: precision dispensing, precision embossing, precision jetting, and screen printing. The wavelength converting layer 101 may include phosphor particles mixed with one or more organic chemicals such as silicone resin and/or epoxy resin. In addition, when mixing phosphor particles and organic chemicals, diluents such as toluene, heptane, n-hexane, isopropanol, etc. may be added. Alternatively, the wavelength conversion layer 101 may include phosphor particles mixed with glass. In addition, for example, the weight ratio of phosphor particles to organic chemicals (or glass) is about

That is, the amount of phosphor particles by weight:

The aforementioned wavelength converting layer mixed with glass is applied at a temperature having a range from about 100°C to about 500°C. The wavelength conversion layer may have a shape such as but not limited to a convex surface, a concave surface, a plane, or a pyramid. The wavelength conversion layer 101 shown in FIG. 1 has a convex shape. The wavelength conversion layer 101 may have a thickness of about 1 micron to about 200 microns, preferably about 10 microns to about 100 microns. The light emitting device 100 is capable of emitting light having a peak wavelength range of about 200 nm to about 500 nm. The frame 102 is made of a transparent material, such as epoxy resin, silicone resin, polyimide resin, glass, quartz, acryl (acryl) resin (such as polymethylmethacrylate (PMMA, polymethylmethacrylate) etc.), polycarbonate (PC) resin, SU-8 photoresist, BCB photoresist, or parylene resin. Alternatively, the frame 102 can also be a single metal layer or multiple metal layers. The frame 102 can be configured by at least one of the following methods: spin coating, dip coating, chemical vapor deposition, thermal evaporation, and electron beam evaporation. The frame 102 may have a thickness of about 0.1 microns to about 200 microns, preferably about 2 microns to about 100 microns. In addition, a light diffusion layer (not shown) can be disposed on the wavelength conversion layer 101 .

As shown in the drawings, in various embodiments of the present invention, the frame can not only be disposed on the top of the light emitting semiconductor, but also extend to cover the side portion of the light emitting semiconductor. When the frame extends to cover the side portions of the light emitting semiconductor, the wavelength conversion layer may or may not cover the side portions of the light emitting semiconductor, for example, in FIG. 1 , the wavelength conversion layer does not cover the side portions of the light emitting semiconductor; and in FIG. 3 - In Fig. 5, the wavelength converting layer covers the side portions of the light-emitting semiconductor.

FIG. 2 shows a schematic cross-sectional view of a chip-type light emitting device 200 according to an embodiment of the present invention. The light emitting device 200 in FIG. 2 is also a vertical light emitting device. As shown in FIG. 2 , the light emitting device 200 includes a light emitting semiconductor 203 , a frame 202 , and a wavelength conversion layer 201 . The surface of the light emitting semiconductor 203 adjacent to the wavelength conversion layer 201 can be roughened to increase light extraction efficiency. The light emitting device 200 is coupled to a substrate 206 , a pad 205 is provided on the light emitting semiconductor 203 , and the pad 205 is connected to a wire 204 . In an embodiment of the present invention, the pads can be disposed on the light emitting semiconductor inside the frame (such as shown in FIG. 1 ), or on the light emitting semiconductor outside the frame (such as shown in FIG. 2 ).

In an embodiment of the present invention, the light-emitting device can also be provided by the following sequence: first forming a frame over the top of the light-emitting semiconductor, then coupling the light-emitting semiconductor to the substrate, then connecting wires to the light-emitting semiconductor, and finally applying wavelength conversion layer. Alternatively, the light-emitting device can also be provided by first forming a frame over the top of the light-emitting semiconductor, then coupling the light-emitting semiconductor to the substrate, then applying a wavelength conversion layer, and finally connecting wires to the light-emitting semiconductor.

FIG. 3 shows a schematic cross-sectional view of a chip-type light emitting device 300 according to an embodiment of the present invention. The light emitting device 300 in FIG. 3 is also a horizontal light emitting device. As shown in FIG. 3 , the light emitting device 300 includes a light emitting semiconductor 303 , a frame 302 , and a wavelength conversion layer 301 . Light emitting device 300 is coupled to substrate 306 . On the light emitting semiconductor 303 of the light emitting device 300, a first pad 305a (which is provided on the n-type semiconductor layer 303a) and a second pad 305b (which is provided on the p-type semiconductor layer 303c); A pad 305a and a second pad 305b are connected to the first wire 304a and the second wire 304b. The light emitting semiconductor 303 may include: a p-type semiconductor layer 303c adjacent to the substrate 306; an active layer 303b disposed on the p-type semiconductor layer 303c; and an n-type semiconductor layer 303a disposed on the active layer 303b and converting Layers 301 are contiguous. In addition, the reflective layer 307 can be disposed on the bottom of the light emitting semiconductor 303, that is, disposed between the substrate 306 and the light emitting device 300, specifically, the reflective layer 307 is located between the substrate 306 and the p-type semiconductor layer 303c . The reflective layer 307 is also applicable to other embodiments of the present invention. The light emitting semiconductor in other embodiments of the present invention may also have the same or similar structure as the light emitting semiconductor 303 shown in FIG. 3 .

FIG. 4 shows a schematic cross-sectional view of a chip-type light emitting device 400 according to an embodiment of the present invention. The light emitting device 400 in FIG. 4 is a flip-chip light emitting device. As shown in FIG. 4 , the light emitting device 400 includes a light emitting semiconductor 403 , a frame 402 , and a wavelength conversion layer 401 . The light emitting semiconductor 403 includes a p-type semiconductor layer 403c, an activation layer 403b, and an n-type semiconductor layer 403a. A reflective layer 407 is provided on the bottom of the light emitting semiconductor 403 (p-type semiconductor layer 403c). The first pad 404a is provided on the reflective layer 407, and the second pad 404b is provided on the n-type semiconductor layer 403a. The light emitting device 400 is coupled to the substrate 406, wherein the first bonding pad 404a and the second bonding pad 404b are respectively connected to the conductive region 408 on the substrate 406 through the first contact 405a and the second contact 405b. In this embodiment, the light-emitting device can also be provided in the following order: first flip-chip the light-emitting semiconductor on the substrate, then form a frame on top of the light-emitting semiconductor, and finally apply a wavelength conversion layer.

FIG. 5 shows a schematic cross-sectional view of a chip-type light emitting device 500 according to an embodiment of the present invention. The embodiment of FIG. 5 is similar to the embodiment of FIG. 1, the difference is that the wavelength conversion layer 501 of FIG. 5 covers the side portion of the light emitting semiconductor 503 (when the frame 502 extends to cover the side portion of the light emitting semiconductor 503), And the surface of the light emitting semiconductor 503 is roughened to form a roughened (patterned) surface 508 . Light emitting device 500 is coupled to substrate 506 . Pads 505 are provided on the light emitting semiconductor 503 , and the pads 505 are connected to the wires 504 .

FIG. 6 shows a schematic cross-sectional view of a chip-type light emitting device 1100 according to an embodiment of the present invention. As shown in FIG. 6 , the light emitting device 1100 includes a light emitting semiconductor 1103 , a frame 1102 , and a wavelength conversion layer 1101 , wherein the wavelength conversion layer 1101 has a concave shape. Light emitting device 1100 is coupled to substrate 1106 . Pads 1105 are provided on the light emitting semiconductor 1103 , and the pads 1105 are connected to wires 1104 .

FIG. 7 shows a schematic cross-sectional view of a chip-type light emitting device 1200 according to an embodiment of the present invention. As shown in FIG. 7, the light emitting device 1200 includes a light emitting semiconductor 1203, a first frame 1202a, a second frame 1202b, a first wavelength conversion layer 1201a, and a second wavelength conversion layer 1201b. The first frame 1202a is surrounded by the second frame 1202b, the first wavelength conversion layer 1201a is applied on the area of the light emitting semiconductor 1203 bounded by the first frame 1202a, and the first wavelength converting layer 1201a is applied on the area of the light emitting semiconductor 1203 bounded by the second frame 1202b Therefore, the second wavelength conversion layer 1201b located in the second frame 1202b can cover the first wavelength conversion layer 1201a located in the first frame 1202a, thus forming a multi-layer (overlapped) wavelength conversion layer 1201b. layer. Light emitting device 1200 is coupled to substrate 1206 . Pads 1205 are provided on the light emitting semiconductor 1203 , and the pads 1205 are connected to wires 1204 .

FIG. 8 shows a schematic cross-sectional view of a chip-type light emitting device 1300 according to an embodiment of the present invention. As shown in FIG. 8, the light emitting device 1300 includes a light emitting semiconductor 1303, a frame 1302, a first wavelength conversion layer 1301a, and a second wavelength conversion layer 1301b. The embodiment of FIG. 8 is similar to the embodiment of FIG. 7, but the first wavelength conversion layer 1301a and the second wavelength conversion layer 1301b of FIG. 8 are applied in the same frame (ie, frame 1302). The second wavelength conversion layer 1301b covers the first wavelength conversion layer 1301a, that is, multiple (overlapping) wavelength conversion layers can be formed. Light emitting device 1300 is coupled to substrate 1306 . Pads 1305 are provided on the light emitting semiconductor 1303 , and the pads 1305 are connected to wires 1304 .

FIG. 9 shows a schematic cross-sectional view of a chip-type light emitting device 1400 according to an embodiment of the present invention. As shown in FIG. 9, the light emitting device 1400 includes a light emitting semiconductor 1403, a frame 1402, a first wavelength conversion layer 1401a, and a second wavelength conversion layer 1401b. The frame 1402 disposed on the top of the light emitting semiconductor 1403 can divide the light emitting semiconductor 1403 into two regions, and apply the first wavelength conversion layer 1401a and the second wavelength conversion layer 1401b in the two regions respectively, and on the light emitting semiconductor 1403 Multiple (parallel) wavelength conversion layers are formed. Light emitting device 1400 is coupled to substrate 1406 . Pads 1405 are provided on the light emitting semiconductor 1403 , and the pads 1405 are connected to wires 1404 . In addition, in the embodiment of the present invention, the wavelength conversion layer can cover a part of the frame without overflowing the limited range of the frame. For example, in FIG. 9, the first wavelength conversion layer 1401a can cover the frame located on the right side of the drawing 1402 without overflowing the frame 1402.

FIG. 10 shows a schematic cross-sectional view of a chip-type light emitting device 1500 according to an embodiment of the present invention. As shown in FIG. 10 , the light emitting device 1500 includes: a first light emitting semiconductor 1503a; a second light emitting semiconductor 1503b; a first frame 1502a disposed above the top of the first light emitting semiconductor 1503a; a second frame 1502b disposed on the second light emitting semiconductor 1503b; a first wavelength conversion layer 1501a applied on the first light emitting semiconductor 1503a confined by the first frame 1502a; and a second wavelength conversion layer 1501b applied on the second light emitting semiconductor 1503a confined by the second frame 1502b on the semiconductor 1503b. The first light emitting semiconductor 1503a and the second light emitting semiconductor 1503b are respectively coupled to the substrate 1506 . The first bonding pad 1505a is disposed on the first light emitting semiconductor 1503a; and the second bonding pad 1505b is disposed on the second light emitting semiconductor 1503b. Connect the first pad 1505a and the second pad 1505b to the first wire 1504a and the second wire 1504b respectively. In the embodiment of FIG. 10, the first wavelength conversion layer 1501a and the second wavelength conversion layer 1501b are respectively applied to the first frame 1502a and the second frame 1502b, however, the embodiment of FIG. 9 can also be applied to FIG. 10 In the embodiment of FIG. 9 , specifically, the frames in FIG. 9 can be respectively set above the first light-emitting semiconductor 1503a and the second light-emitting semiconductor 1503b in FIG. Multiple (parallel) wavelength conversion layers; Alternatively, the embodiment of FIG. 7 or FIG. 8 can be applied to the embodiment of FIG. ) wavelength conversion layer. However, the embodiment of FIG. 10 may also include the concave wavelength conversion layer shown in FIG. 6 . In addition, different or the same currents can be passed through the first light-emitting semiconductor 1503a and the second light-emitting semiconductor 1503b through the first wire 1504a and the second wire 1504b respectively.

FIG. 11 shows a schematic cross-sectional view of a package structure 2100 of a chip-type light emitting device according to an embodiment of the present invention. As shown in FIG. 11 , the package structure 2100 includes: a lead frame 2130; an attachment layer 2120 disposed on the lead frame 2130; a substrate 2106 disposed on the attachment layer 2120; a chip-type light emitting device coupled to the substrate 2106; And the wire 2104 is used to electrically connect the chip-type light emitting device with the lead frame 2130 . As mentioned above, this chip-type light emitting device may include a light emitting semiconductor 2103 , a frame 2102 , and a wavelength conversion layer 2101 . The surface of the light emitting semiconductor 2103 adjacent to the wavelength conversion layer 2101 may be roughened. A pad 2105 is provided on the light-emitting semiconductor 2103 of the chip-type light-emitting device, and the pad 2105 is connected to the wire 2104 , so that the chip-type light-emitting device is electrically connected to the lead frame 2130 . Although only one wire is shown in the drawings, one or more wires may be used depending on the actual situation. A transparent coating layer 2110 may be provided to cover the wavelength conversion layer 2101 and wrap the chip-type light emitting device, so that the wavelength conversion layer 2101 and the chip-type light-emitting device are not affected by the external environment. The transparent covering layer 2110 is made of at least one of the following transparent materials: epoxy resin, silicone resin, polyimide resin, glass, quartz, acrylic resin (such as PMMA, etc.), polycarbonate resin, and parylene resin. The transparent covering layer 2110 may have a shape of a convex surface, a concave surface, a plane, or a pyramid. Alternatively, the transparent cladding layer 2110 may feature a Fresnel lens. In addition, a light diffusion layer (not shown) can be disposed on the transparent coating layer 2110 .

In an embodiment of the present invention, the first wavelength conversion layer and the second wavelength conversion layer may be the same or different wavelength conversion layers.

FIG. 12 is a comparison chart of correlated color temperature (CCT, correlated color temperature) distribution between a known package structure and the package structure of the present invention. In FIG. 12 , the package structure shown in FIG. 11 is compared with a known standard package structure and a known uniform coating package structure. As shown in FIG. 12 , it can be clearly observed that the packaging structure of the present invention has better CCT distribution uniformity than the known standard packaging structure and the known uniform coating packaging structure.

The frame disclosed in the present invention can be used as an overflow dam when the phosphor mixture is filled, so that the phosphor mixture can be confined by the frame after filling, and will not overflow to other unwanted phosphors The area of the mixed liquid, and after the light is converted by the phosphor in the frame, the effect of white light can be obtained, the distribution uniformity of the correlated color temperature (CCT) can be promoted, the yield of the correlated color temperature can be improved, and the usage of phosphor particles can be reduced. .

Although the present invention has been described in detail with reference to preferred embodiments and accompanying drawings, those skilled in the art can understand that various modifications, changes and equivalent substitutions can be made without departing from the spirit and scope of the present invention. These modifications, changes and equivalent substitutions still fall within the scope of the claims of the present invention.

Claims (42)

1. a chip type light-emitting device is characterized in that, said chip type light-emitting device comprises:

One or more emitting semiconductors; And

One or more frameworks are configured in the over top of said emitting semiconductor.

2. chip type light-emitting device as claimed in claim 1 is characterized in that, said chip type light-emitting device more comprises:

The one layer or more wavelength conversion layer is applied on the said emitting semiconductor that limits to through said one or more framework.

3. chip type light-emitting device as claimed in claim 1 is characterized in that, said framework can extend the side position of containing said emitting semiconductor.

4. chip type light-emitting device as claimed in claim 2 is characterized in that, said framework can extend the side position of containing said emitting semiconductor.

5. chip type light-emitting device as claimed in claim 4 is characterized in that, said wavelength conversion layer can cover the side position of said emitting semiconductor.

6. chip type light-emitting device as claimed in claim 2 is characterized in that, said chip type light-emitting device can be launched has the light of about 200nm to the peak wavelength scope of about 500nm.

7. chip type light-emitting device as claimed in claim 2 is characterized in that, said wavelength conversion layer is to apply through following one of them kind method: accurate dispensing method, accurate stamped method, accurate insufflation and wire mark method.

8. chip type light-emitting device as claimed in claim 2 is characterized in that said wavelength conversion layer comprises the phosphor particle that mixes with one or more organic chemicals.

9. chip type light-emitting device as claimed in claim 8; Its characteristic, said phosphor particle is about

than the weight ratio of the above organic chemicals

10. chip type light-emitting device as claimed in claim 8 is characterized in that, said organic chemicals is silicone resin and/or epoxy resin.

11. chip type light-emitting device as claimed in claim 2 is characterized in that said wavelength conversion layer comprises the phosphor particle that mixes with glass.

12. chip type light-emitting device as claimed in claim 11; It is characterized in that said phosphor particle is about

than the above weight of glass ratio

13. chip type light-emitting device as claimed in claim 11 is characterized in that, the said wavelength conversion layer that mixes with glass is to apply through following one of them kind method: accurate dispensing method, accurate stamped method, accurate insufflation and wire mark method.

14. chip type light-emitting device as claimed in claim 13 is characterized in that, the said wavelength conversion layer that mixes with glass is under the temperature with about 100 ℃ of extremely about 500 ℃ scopes, to be applied in.

15. chip type light-emitting device as claimed in claim 2 is characterized in that said wavelength conversion layer has the shape of convex surface, concave surface, plane or pyramid.

16. chip type light-emitting device as claimed in claim 1 is characterized in that, said framework is made by a transparent material.

17. chip type light-emitting device as claimed in claim 16; It is characterized in that said transparent material is epoxy resin, silicone resin, polyimide resin, glass, quartz, acryl resin, polycarbonate resin, SU-8 photoresistance, BCB photoresistance or Parylene resin.

18. chip type light-emitting device as claimed in claim 1 is characterized in that, said framework is to dispose through following one of them kind method: rotary coating, dip coated, chemical vapour deposition (CVD), thermal evaporation and electron beam evaporation.

19. chip type light-emitting device as claimed in claim 1 is characterized in that, said framework is single metal level or multi-metal layer.

20. chip type light-emitting device as claimed in claim 1 is characterized in that, said framework have about 0.1 micron to about 200 microns thickness.

21. chip type light-emitting device as claimed in claim 2 is characterized in that, said wavelength conversion layer have about 1 micron to about 200 microns thickness.

22. chip type light-emitting device as claimed in claim 2 is characterized in that, said chip type light-emitting device more comprises:

One light diffusion layer is configured on the said wavelength conversion layer.

23. chip type light-emitting device as claimed in claim 2 is characterized in that, with the surface of the adjacent said emitting semiconductor of said wavelength conversion layer by roughening.

24. chip type light-emitting device as claimed in claim 2 is characterized in that, said wavelength conversion layer is heat-treated.

25. chip type light-emitting device as claimed in claim 24 is characterized in that, said heat treated temperature is between about 60 ℃ and about 300 ℃.

26. chip type light-emitting device as claimed in claim 1 is characterized in that, said emitting semiconductor comprises:

One p type semiconductor layer;

One active layer is configured on the said p type semiconductor layer; And

One n type semiconductor layer is configured on the said active layer.

27. chip type light-emitting device as claimed in claim 2 is characterized in that said wavelength conversion layer can cover the part of said framework.

28. chip type light-emitting device as claimed in claim 1 is characterized in that, said chip type light-emitting device more comprises:

One reflector is configured on the bottom of said emitting semiconductor.

29. the encapsulating structure of a chip type light-emitting device is characterized in that, the encapsulating structure of said chip type light-emitting device comprises:

One lead frame;

One attachment layer is arranged on the said lead frame;

One substrate is arranged on the said attachment layer;

Chip type light-emitting device as claimed in claim 1 is coupled to said substrate; And

One or more weld pads are arranged on the said chip type light-emitting device.

30. the encapsulating structure of chip type light-emitting device as claimed in claim 29 is characterized in that, the encapsulating structure of said chip type light-emitting device more comprises:

The one layer or more wavelength conversion layer is applied on the said emitting semiconductor that said one or more framework limited to through said chip type light-emitting device.

31. the encapsulating structure of chip type light-emitting device as claimed in claim 29 is characterized in that, the encapsulating structure of said chip type light-emitting device more comprises:

One or many leads, be connected with said weld pad, and said chip type light-emitting device and said lead frame are electrically connected.

32. the encapsulating structure of chip type light-emitting device as claimed in claim 31 is characterized in that, the encapsulating structure of said chip type light-emitting device more comprises:

The one layer or more wavelength conversion layer is applied on the said emitting semiconductor that said one or more framework limited to through said chip type light-emitting device.

33. the encapsulating structure of chip type light-emitting device as claimed in claim 32 is characterized in that, the encapsulating structure of said chip type light-emitting device more comprises:

One transparent coating layer is in order to cover said wavelength conversion layer and to coat said chip type light-emitting device.

34. the encapsulating structure of chip type light-emitting device as claimed in claim 33; It is characterized in that said transparent coating layer is made by following one of them kind transparent material: epoxy resin, silicone resin, polyimide resin, glass, quartz, acryl resin, polycarbonate resin and Parylene resin.

35. the encapsulating structure of chip type light-emitting device as claimed in claim 33 is characterized in that, said transparent coating layer has the shape of convex surface, concave surface, plane or pyramid.

36. the encapsulating structure of chip type light-emitting device as claimed in claim 33 is characterized in that, said transparent coating layer has the characteristic of Fresnel lens.

37. the encapsulating structure of chip type light-emitting device as claimed in claim 33 is characterized in that, the encapsulating structure of said chip type light-emitting device more comprises:

One light diffusion layer is configured on the said transparent coating layer.

38. the encapsulating structure of chip type light-emitting device as claimed in claim 29 is characterized in that, said substrate is light tight.

39. the encapsulating structure of chip type light-emitting device as claimed in claim 38 is characterized in that, said substrate is metal, pottery or semiconductor.

40. the encapsulating structure of chip type light-emitting device as claimed in claim 39 is characterized in that, the encapsulating structure of said chip type light-emitting device more comprises:

One reflector is between said substrate and said chip type light-emitting device.

41. the encapsulating structure of chip type light-emitting device as claimed in claim 30 is characterized in that, the encapsulating structure of said chip type light-emitting device more comprises:

One light diffusion layer is configured on the said wavelength conversion layer.

42. the encapsulating structure of chip type light-emitting device as claimed in claim 32 is characterized in that, the encapsulating structure of said chip type light-emitting device more comprises:

One light diffusion layer is configured on the said wavelength conversion layer.

Images