CN102593226A - Novel up-converter and application of novel up-converter in solar cell - Google Patents
Novel up-converter and application of novel up-converter in solar cell Download PDFInfo
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- CN102593226A CN102593226A CN2012100768943A CN201210076894A CN102593226A CN 102593226 A CN102593226 A CN 102593226A CN 2012100768943 A CN2012100768943 A CN 2012100768943A CN 201210076894 A CN201210076894 A CN 201210076894A CN 102593226 A CN102593226 A CN 102593226A
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Abstract
The invention belongs to the technical field of a solar cell and particularly relates to a novel up-converter and application of the novel up-converter in the solar cell. The converter is formed by up-conversion luminescence materials doped with rare earth ion, quantum dot materials and low-temperature curing materials, the quantum dot materials are semiconductor compounds with narrow band gaps, and the low-temperature curing materials are spin coating silicon oxide layers or silica gel. Compared with the luminescent materials doped with the rare earth ion alone, the up-converter combining the quantum dot materials can further increase the absorption region of the solar cell in a near infrared spectrum area and improves quantum efficiency of the up-conversion luminescence materials, thereby improving cell efficiency.
Description
Technical field
The invention belongs to technical field of solar cells, particularly a kind of novel upconverter and the application in solar cell thereof.
Background technology
In solar photovoltaic technology, because the restriction of material energy gap, solar cell can only partially absorb sunlight.For example for crystal silicon battery, energy gap is about 1.12ev, and its long wave absorbs limit and is about 1100nm; And greater than the infrared light part of this wavelength; Account for 50% of whole solar spectrum energy, but battery can not absorb, and then limit the raising of efficiency of solar cell.Therefore, the spectral response range that how to improve the solar cell generating efficiency, reduces cost, widens solar cell becomes the focus of Recent study.
At present, solar spectrum is made full use of can be through following two approach: the one, absorb that low-energy infrared light sends high-octane visible light in the solar spectrum, and this process relates generally to the up-conversion luminescence process; The 2nd, high-octane ultraviolet light sends low-yield visible light in the absorption solar spectrum, and this process relates generally to the down-conversion luminescence process.In the up-conversion luminescence process, relate to up-conversion luminescent material.At present, up-conversion luminescent material has been obtained extensive use at aspects such as biological fluorescent labeling, solid state lasers, but it is used in the solar cell, has only less report at present.2005, people such as A.Shalav propose first will be by NaYF
4: Er
3+Up-conversion luminescent material is applied in the double-side solar cell, and has realized raising [A.Shalav, B.S.Richards and T.Truke, " the Application of NaYF of efficiency of solar cell
4: Er
3+Up-converting phosphors for enchanced near-infread silicon solar cell response ". Appl.Phy.Lett, 2005,86 (1): 013505).Up to now, all up-conversion luminescent materials are only limited to rare earth compound.Why rare earth has excellent luminescent properties, be that it has excellent power conversion function, and this is to be determined by its special electron structure.But rare earth ion is owing to receive the restriction and the influence of matrix environment on every side of self electron shell structure, and it can only have more weak absorption in a certain wavelength, and these characteristics cause lower quantum luminous efficiency.
In order further to improve efficiency of solar cell, reduce production costs, urgent need is developed near infrared spectrum zone wide band absorption and is launched strong visible light upconverter.
Summary of the invention
The object of the present invention is to provide a kind of novel upconverter and the application in solar cell thereof, said upconverter is used for solar cell can improve efficiency of solar cell.
The technical scheme that the present invention adopts is following:
A kind of novel upconverter; Said transducer is made up of rare earth ion doped up-conversion luminescent material, quanta point material and low-temperature setting material; Described quanta point material is the semiconducting compound of narrow band gap, silicon oxide layer that described low-temperature setting material is spin coating or silicon gel.
Described transducer has following three kinds of structures:
1) described transducer is uniformly distributed in the low-temperature setting material by rare earth ion doped up-conversion luminescent material and quanta point material and forms.Preferably, the rare earth ion doped up-conversion luminescent material and the mass mixing ratio example of quantum dot are 4-8:1.
2) described transducer is formed in the low-temperature setting material by rare earth ion doped up-conversion luminescent material and quanta point material layer distributed, and rare earth ion doped up-conversion luminescent material layer is positioned on the quanta point material layer.Preferably, the mixed proportion of the up-conversion luminescent material of rare earth ion doped up-conversion luminescent material layer middle rare earth ion doping and low-temperature setting material is that every 1g luminescent material is dissolved in 4-6ml low-temperature setting material; The mixed proportion of quanta point material and low-temperature setting material is that every 2g quanta point material is dissolved in 4-6ml low-temperature setting material in the quanta point material layer.
3) core/shell structure that is made up of rare earth ion doped up-conversion luminescent material and quanta point material of described transducer is uniformly distributed in the low-temperature setting material and forms; Core/shell structure is nuclear with the quanta point material; Rare earth ion doped up-conversion luminescent material is a shell, and shell thickness is 50-300nm.
Described core/shell structure preparation method is; At first prepare quantum dot through chemical solution method; Then the quantum dot for preparing as nucleus, through the core/shell structure of the rare earth ion doped up-conversion luminescent material parcel nucleus of hydro-thermal reaction method or Prepared by Sol Gel Method.Used method all is a prior art.
Described quanta point material is preferably PbS, PbSe, GaSb or HgSe, other narrow bandgap semiconductor material also can, the particle diameter size is 5-30nm.
Described rare earth ion doped up-conversion luminescent material is rare earth ion doped oxide, fluoride, chloride or sulfide.
Mode 1), 2) and 3) the upconverter thickness that obtains is 0.1-1.0mm, mode 1), 3) preferred 0.1-0.5mm; Mode 2) preferred 0.2-1.0mm.
Above-mentioned novel upconverter is used in solar cell, can be widened the response of solar cell, help further improving cell power generation efficient in the infrared spectrum zone.
Mode 1) and 3) get final product mode 2 according to the position assembling of transducer conventionally) upconverter be followed successively by rare earth ion doped luminescent material, quanta point material according to the direction of light incident.
The narrow band gap quantum dot is adsorbing close infrared light significantly, and produces a large amount of excitation electrons.These electronics transit to ground state through radiation recombination on the one hand, send photon simultaneously and up-conversion is excited; On the other hand, electronics can be gone up switching emission through the excitation state that quantum effect transits to up-conversion.This two aspect all can improve going up of up-conversion luminescent material and change quantum efficiency.Therefore,, can further increase the absorption of solar cell, thereby improve battery efficiency light in conjunction with the upconverter spare of quanta point material with respect to the rare earth ion doped up-conversion luminescent material of independent usefulness.
The present invention has following advantage with respect to prior art:
The invention provides a kind of novel upconverter and the application in solar cell thereof; With respect to the rare earth ion doped luminescent material of independent usefulness; Upconverter spare in conjunction with quanta point material can further increase the absorption of solar cell to light, helps improving battery efficiency.
Description of drawings
Fig. 1 is the solar battery structure sketch map with upconverter;
Fig. 2 is the structural representation of the upconverter of embodiment 1;
Fig. 3 is the structural representation of the upconverter of embodiment 2;
Fig. 4 is the structural representation of the upconverter of embodiment 3;
Fig. 5-7 is respectively the photoluminescence spectrum of the upconverter of embodiment 1-3.
Embodiment
Below with specific embodiment technical scheme of the present invention is described, but protection scope of the present invention is not limited thereto:
Solar battery structure with upconverter of the present invention is as shown in Figure 1, and 1 is silica-based solar cell; 2 is upconverter; 3 is back reflection layer, can be the transparent membrane of glass state material or metal oxide, and its effect is the light that the reflection upconverter sends, thereby makes light get into the absorption that battery increases battery again.
The preparation method of upconverter is following:
The preparation of quantum dot PbS: lauryl sodium sulfate (0.05mol), softex kw (0.05mol), ethylenediamine tetra-acetic acid (0.2mol) are dissolved in 100ml, 70 ℃ the constant temperature deionized water; And under the effect of magnetic stirring apparatus, stir 5min; Add several weak aqua ammonias then; The pH value of regulator solution is 10, and add the lead acetate solution of 10ml, 0.05mol/L and stirred 1-2 minute this moment.Last slowly add the thiourea solution of 20ml, 0.025mol/L and continue high-speed stirred 10 minutes, question response finishes behind the bundle, naturally cools to room temperature, and with deionized water and alcohol difference eccentric cleaning three times, end product is stored in the absolute alcohol for use.
With quanta point material PbS and NaYF
4: 18%Yb
3+, 2%Er
3+Rare earth ion doped luminescent material is that 1:6 mixes according to mass ratio; Then mixed material and low-temperature setting material silicon gel (according to the mixed material mixing 2ml silicon of 1g gelometer) are mixed into colloidal mixture through magnetic agitation; Be coated on the glass substrate then; And dry moulding, thickness is 0.2mm.Shown in Figure 2 is the upconverter sketch map.Wherein filled circles is represented quantum dot, the luminescent material that the rectangle representative is rare earth ion doped.
Embodiment 2
The preparation method of upconverter is following:
Respectively with quanta point material PbS and NaYF
4: 18%Yb
3+, 2%Er
3+Rare earth ion doped luminescent material and low-temperature setting material silicon gel are mixed into even colloidal mixture through magnetic agitation.The ratio of quanta point material and silicon gel is dissolved in the 5ml silicon gel for the 2g quanta point material; The ratio of up-conversion luminescent material and silicon gel is dissolved in the 5ml silicon gel for the 1g luminescent material.Be coated on successively then (two-layer thickness is suitable) on the glass substrate, and dry moulding, thickness is 0.2mm.Direction according to light incident is followed successively by rare earth ion doped luminescent material, quantum dot light emitting material.Shown in Figure 3 is structural representation.
The preparation method of upconverter is following:
PbS/NaYF with the core/shell structure for preparing
4: 18%Yb
3+, 2%Er
3+Luminescent material is mixed into even colloidal mixture with low-temperature setting material (according to 1g nucleocapsid structure luminescent material mixing 3ml low-temperature setting material meter) through magnetic agitation, is coated on the glass substrate then, and dries moulding, and thickness is 0.2mm.The nuclear diameter size is 8nm, and shell thickness is 200nm.Fig. 4 is the upconverter sketch map.
Fig. 5, Fig. 6, Fig. 7 are respectively embodiment 1,2, the photoluminescence spectrum of the novel upconverter in 3.Can find out clearly that with respect to the luminescent material that does not combine quantum dot, the photoluminescence spectra of the upconverter that forms in conjunction with the back is in corresponding zone, luminous intensity is improved significantly.
Claims (10)
1. novel upconverter; It is characterized in that; Said transducer is made up of rare earth ion doped up-conversion luminescent material, quanta point material and low-temperature setting material; Described quanta point material is the semiconducting compound of narrow band gap, silicon oxide layer that described low-temperature setting material is spin coating or silicon gel.
2. novel upconverter as claimed in claim 1 is characterized in that, described transducer is uniformly distributed in the low-temperature setting material by rare earth ion doped up-conversion luminescent material and quanta point material and forms.
3. novel upconverter as claimed in claim 2 is characterized in that, rare earth ion doped up-conversion luminescent material and the mass mixing ratio of quantum dot example are 4-8:1.
4. novel upconverter as claimed in claim 1; It is characterized in that; Described transducer is formed in the low-temperature setting material by rare earth ion doped up-conversion luminescent material and quanta point material layer distributed, and rare earth ion doped up-conversion luminescent material layer is positioned on the quanta point material layer.
5. novel upconverter as claimed in claim 4; It is characterized in that the up-conversion luminescent material of rare earth ion doped up-conversion luminescent material layer middle rare earth ion doping and the mixed proportion of low-temperature setting material are that every 1g luminescent material is dissolved in 4-6ml low-temperature setting material; The mixed proportion of quanta point material and low-temperature setting material is that every 2g quanta point material is dissolved in 4-6ml low-temperature setting material in the quanta point material layer.
6. novel upconverter as claimed in claim 1; It is characterized in that; The core/shell structure that described transducer is made up of rare earth ion doped up-conversion luminescent material and quanta point material is uniformly distributed in the low-temperature setting material and forms; Core/shell structure is nuclear with the quanta point material, and rare earth ion doped up-conversion luminescent material is a shell, and shell thickness is 50-300nm.
7. like the arbitrary described novel upconverter of claim 1-6, it is characterized in that described quanta point material is PbS, PbSe, GaSb or HgSe, the particle diameter size is 5-30nm.
8. novel upconverter as claimed in claim 7 is characterized in that, described rare earth ion doped up-conversion luminescent material is rare earth ion doped oxide, fluoride, chloride or sulfide.
9. like the arbitrary described novel upconverter of claim 1-6, it is characterized in that described upconverter thickness is 0.1-1.0mm.
10. the application of the arbitrary said novel upconverter of claim 1-6 in solar cell.
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| CN2012100768943A CN102593226A (en) | 2011-03-30 | 2012-03-22 | Novel up-converter and application of novel up-converter in solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832267A (en) * | 2012-09-06 | 2012-12-19 | 西安隆基硅材料股份有限公司 | Crystalline silicon containing up-conversion luminance quantum dot and preparation method of crystalline silicon |
Citations (2)
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| CN101369609A (en) * | 2008-10-10 | 2009-02-18 | 南开大学 | Solar battery with upper conversion material and preparation method |
| US20100044675A1 (en) * | 2008-08-21 | 2010-02-25 | Seagate Technology Llc | Photovoltaic Device With an Up-Converting Quantum Dot Layer |
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- 2012-03-22 CN CN2012100768943A patent/CN102593226A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100044675A1 (en) * | 2008-08-21 | 2010-02-25 | Seagate Technology Llc | Photovoltaic Device With an Up-Converting Quantum Dot Layer |
| CN101369609A (en) * | 2008-10-10 | 2009-02-18 | 南开大学 | Solar battery with upper conversion material and preparation method |
Non-Patent Citations (1)
| Title |
|---|
| A.C.PAN等: "Enhancement of up-conversion efficiency by combining rare earth-doped phosphors with PbS quantum dots", 《SOLAR ENERGY MATERIALS AND SOLAR CELLS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832267A (en) * | 2012-09-06 | 2012-12-19 | 西安隆基硅材料股份有限公司 | Crystalline silicon containing up-conversion luminance quantum dot and preparation method of crystalline silicon |
| CN102832267B (en) * | 2012-09-06 | 2014-11-26 | 西安隆基硅材料股份有限公司 | Crystalline silicon containing up-conversion luminance quantum dot and preparation method of crystalline silicon |
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Application publication date: 20120718 |