CN102593112A - High frequency voltage doubling rectifier module - Google Patents
High frequency voltage doubling rectifier module Download PDFInfo
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- CN102593112A CN102593112A CN2012100679916A CN201210067991A CN102593112A CN 102593112 A CN102593112 A CN 102593112A CN 2012100679916 A CN2012100679916 A CN 2012100679916A CN 201210067991 A CN201210067991 A CN 201210067991A CN 102593112 A CN102593112 A CN 102593112A
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- high frequency
- frequency voltage
- capacitor
- rectifier module
- silicon stack
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Abstract
The invention relates to a high frequency voltage doubling rectifier module, which comprises a capacitor and silicon stacks. The high frequency voltage doubling rectifier module is characterized in that in a vertical direction, the capacitor and the silicon stacks are designed to a layered structure, the silicon stacks are arranged on an upper layer and a lower layer, and the capacitor is arranged on a middle layer; in a horizontal direction, the silicon stacks on the upper layer, the capacitor on the middle layer, and the silicon stacks on the lower layer are divided into several levels by circuit boards, a structure of each level consists of the silicon stacks on the upper layer, the capacitor on the middle layer, and the silicon stacks on the lower layer, which are within a space divided by circuit boards on two sides, the silicon stacks and the capacitor in each level are arranged through circuit boards on two sides, and circuit boards in the middle are a double-surface connecting structure besides circuit boards in the end portion; and the silicon stacks and the capacitor are molded by casing through epoxy resin. Compared with the existing technologies, the high frequency voltage doubling rectifier module has good radiating and pressure proof effects. The silicon stacks with high heating values are arranged outside the high frequency voltage doubling rectifier module, temperature rises by less than 20 DEG C, the high frequency voltage doubling rectifier module can work continuously, a layered solid structure increases the pressure proof distance effectively, and the loss is decreased.
Description
Technical field
The present invention relates to a kind of high frequency voltage multiplying rectifier module that is used for high voltage source.
Background technology
Existing high pressure voltage multiplying rectifier module adopts the individual layer planar structure more, and the individual layer wiring board is arranged.The heat dissipation problem of rectifier diode when work is the main bottleneck of restriction voltage doubling rectifing circuit in high-power applications.Reducing the thermal resistance that is encapsulated between interior diode of rectification module and the outside air, is the key factor that improves rectification module power output and electric current.
Summary of the invention
The purpose of this invention is to provide a kind of high frequency voltage multiplying rectifier module that is used for high voltage source, this structure good heat dissipation effect, resistance to pressure is high.
For realizing above-mentioned purpose, the present invention realizes through following technical scheme:
High frequency voltage multiplying rectifier module comprises electric capacity, silicon stack, it is characterized in that, and in the vertical direction, described electric capacity, silicon stack are designed to the layering structure, and silicon stack is arranged at the upper and lower, and electric capacity is arranged at the intermediate layer; In the horizontal direction; Be divided into upper strata silicon stack, intermediate layer electric capacity, lower floor's silicon stack multistage by wiring board; Upper strata silicon stack, intermediate layer electric capacity, lower floor's silicon stack in the space that every level structure is divided by the both sides wiring board constitute; Silicon stack in every grade, electric capacity are installed through the wiring board of both sides, and except that the wiring board of end, middle wiring board is two-sided syndeton; Silicon stack and electric capacity adopt the poured with epoxy resin moulding.
In every grade of rectifier structure, 2 multiplication of voltages are one-level, and 4 multiplication of voltages are secondary, and 6 multiplication of voltages are three grades, and by that analogy, 12 multiplication of voltages are 6 grades.
Compared with prior art, the invention has the beneficial effects as follows:
1) good heat dissipation effect, the silicon stack that caloric value is big is placed on skin, and temperature rise is less than 20 ℃, but continuous operation;
2) withstand voltage effective, the layering stereochemical structure has effectively increased withstand voltage distance, has reduced loss.
Description of drawings
Fig. 1 is the structure vertical view of high frequency voltage multiplying rectifier module.
Fig. 2 is the structural perspective of high frequency voltage multiplying rectifier module.
Fig. 3 is the internal structure vertical view of high frequency voltage multiplying rectifier module.
Fig. 4 is the internal structure stereogram of high frequency voltage multiplying rectifier module.
Among the figure: the layer structure 5-wiring board after the 1-upper strata silicon stack 2-electric capacity 3-silicon stack 4-of lower floor epoxy resin is built
Embodiment
Further specify below in conjunction with the accompanying drawing specific embodiments of the invention:
High frequency voltage multiplying rectifier module, electric capacity, silicon stack are designed to the layering structure, in the vertical direction, silicon stack is arranged at the upper and lower, and electric capacity 2 is arranged at the intermediate layer, like Fig. 2-upper strata silicon stack 1, intermediate layer electric capacity 2, lower floor's silicon stack 3 shown in Figure 4.In the horizontal direction; Be divided into upper strata silicon stack 1, intermediate layer electric capacity 2, lower floor's silicon stack 3 multistage by wiring board 5; Upper strata silicon stack, intermediate layer electric capacity, lower floor's silicon stack in the space that every level structure is divided by the both sides wiring board constitute; Silicon stack in every grade, electric capacity 2 are installed through the wiring board 5 of both sides, and except that the wiring board of end, middle wiring board is two-sided syndeton; Silicon stack and electric capacity adopt poured with epoxy resin squarely structure.In every grade of rectifier structure, 2 multiplication of voltages are one-level, and 4 multiplication of voltages are secondary, and 6 multiplication of voltages are three grades, and by that analogy, 12 multiplication of voltages are 6 grades.
The manufacture method of said high frequency voltage multiplying rectifier module is:
1. according to circuit theory, each device parameters in the designed lines is chosen or the wiring board of design demand according to device;
2. first circuit is assembled into an overall structure with electric capacity, wiring board, welds the diode of upper and lower surface then;
3. in low pressure, check the module semi-finished product of assembled;
4. the inside modules circuit of test passes is packed in the grinding tool, put into the baking oven preheating by set point of temperature;
5. use the PGL cast for preparing;
6. isothermal curing;
7. after PGL solidifies, the demoulding, deburring, remove release agent, test, print.
Claims (1)
1. high frequency voltage multiplying rectifier module comprises electric capacity, silicon stack, it is characterized in that, and in the vertical direction, described electric capacity, silicon stack are designed to the layering structure, and silicon stack is arranged at the upper and lower, and electric capacity is arranged at the intermediate layer; In the horizontal direction; Be divided into upper strata silicon stack, intermediate layer electric capacity, lower floor's silicon stack multistage by wiring board; Upper strata silicon stack, intermediate layer electric capacity, lower floor's silicon stack in the space that every level structure is divided by the both sides wiring board constitute; Silicon stack in every grade, electric capacity are installed through the wiring board of both sides, and except that the wiring board of end, middle wiring board is two-sided syndeton; Silicon stack and electric capacity adopt the poured with epoxy resin moulding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100679916A CN102593112A (en) | 2012-03-15 | 2012-03-15 | High frequency voltage doubling rectifier module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100679916A CN102593112A (en) | 2012-03-15 | 2012-03-15 | High frequency voltage doubling rectifier module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102593112A true CN102593112A (en) | 2012-07-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100679916A Pending CN102593112A (en) | 2012-03-15 | 2012-03-15 | High frequency voltage doubling rectifier module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102593112A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105517345A (en) * | 2016-02-18 | 2016-04-20 | 白成东 | Voltage doubling rectifying circuit entity system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2045556U (en) * | 1989-03-06 | 1989-10-04 | 机械电子部上海电缆研究所 | Combined type dc high voltage source device |
| CN2229119Y (en) * | 1994-04-05 | 1996-06-12 | 大连电源技术有限公司 | Portable DC high voltage generator |
| US20040262786A1 (en) * | 2003-06-02 | 2004-12-30 | Semtech Corporation | Diode Stack |
| CN201181319Y (en) * | 2008-03-19 | 2009-01-14 | 苏州市华电电气技术有限公司 | Direct current high voltage experimental device |
| CN101740555A (en) * | 2009-12-28 | 2010-06-16 | 中国工程物理研究院流体物理研究所 | Ultrahigh pressure pulse silicon rectifier stack |
| CN201750348U (en) * | 2010-08-25 | 2011-02-16 | 中国电子科技集团公司第十四研究所 | Multi-level high-voltage transformer rectifier unit |
| CN201898134U (en) * | 2010-12-06 | 2011-07-13 | 西安卫光科技有限公司 | High-voltage fast-recovery rectifying silicon stack |
| CN202473907U (en) * | 2012-03-15 | 2012-10-03 | 鞍山雷盛电子有限公司 | High-frequency voltage multiplying rectification module |
-
2012
- 2012-03-15 CN CN2012100679916A patent/CN102593112A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2045556U (en) * | 1989-03-06 | 1989-10-04 | 机械电子部上海电缆研究所 | Combined type dc high voltage source device |
| CN2229119Y (en) * | 1994-04-05 | 1996-06-12 | 大连电源技术有限公司 | Portable DC high voltage generator |
| US20040262786A1 (en) * | 2003-06-02 | 2004-12-30 | Semtech Corporation | Diode Stack |
| CN201181319Y (en) * | 2008-03-19 | 2009-01-14 | 苏州市华电电气技术有限公司 | Direct current high voltage experimental device |
| CN101740555A (en) * | 2009-12-28 | 2010-06-16 | 中国工程物理研究院流体物理研究所 | Ultrahigh pressure pulse silicon rectifier stack |
| CN201750348U (en) * | 2010-08-25 | 2011-02-16 | 中国电子科技集团公司第十四研究所 | Multi-level high-voltage transformer rectifier unit |
| CN201898134U (en) * | 2010-12-06 | 2011-07-13 | 西安卫光科技有限公司 | High-voltage fast-recovery rectifying silicon stack |
| CN202473907U (en) * | 2012-03-15 | 2012-10-03 | 鞍山雷盛电子有限公司 | High-frequency voltage multiplying rectification module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105517345A (en) * | 2016-02-18 | 2016-04-20 | 白成东 | Voltage doubling rectifying circuit entity system |
| CN105517345B (en) * | 2016-02-18 | 2018-07-31 | 白成东 | Voltage doubling rectifing circuit line identity system |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120718 |