CN102592925B - Field emission element and field emission display device - Google Patents
Field emission element and field emission display device Download PDFInfo
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- CN102592925B CN102592925B CN201210067736.1A CN201210067736A CN102592925B CN 102592925 B CN102592925 B CN 102592925B CN 201210067736 A CN201210067736 A CN 201210067736A CN 102592925 B CN102592925 B CN 102592925B
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- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 30
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
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Abstract
A field emission element comprises a first substrate, a second substrate, a first electrode, a second electrode, a third electrode and a patterned dielectric layer. The first electrode is disposed on a first inner surface of the first substrate facing the second substrate. The second electrode, the third electrode and the patterned dielectric layer are arranged on a second inner surface of the second substrate, which faces the first substrate. The patterned dielectric layer is arranged between the second electrode and the third electrode and is separated from the second electrode and the third electrode. The first thickness of the patterned dielectric layer is greater than the second thickness of the second electrode, and the first thickness of the patterned dielectric layer is greater than the third thickness of the third electrode.
Description
Technical field
The invention relates to a kind of field emission component and field emission display device, espespecially a kind of field emission component and field emission display device utilizing pattern dielectric layer reduction driving voltage.
Background technology
Field Emission Display is after cathode-ray tube display and liquid crystal display, the emerging new technology of the most potential next generation.Relative to existing Display Technique, Field Emission Display has low driving voltage, high brightness large without angle limitations, operating temperature range, high to advantages such as when color are saturated, more and more comes into one's own in recent years.
General lateral field radiated element (lateral field mission device) has the three-stage structure be made up of cathode electrode, gate electrode and the anode electrode that is coated with fluorescent material.By bestowing gate electrode one voltage, bringing out electronics and departing from injection from the field emission source (emitter) cathode electrode, through the attraction of anode electrode high pressure, bombardment forms luminescence to phosphor powder to electronics under vacuum conditions.Therefore, if be arranged on above cathode electrode by gate electrode, and the voltage that the distance between gate electrode and cathode electrode more then bestows gate electrode just can be lower.But structure of grid (top-gate) has its technologic difficulty on this.Therefore, if use the structural design of coplanar cathode electrode and gate electrode, the object of Simplified flowsheet can be reached.But because cathode electrode and gate electrode are coplanar restriction, thus need to bestow on gate electrode than on the higher voltage of grid structure launch to bring out electronics from cathode electrode.Under the condition of fixed current, high voltage (about 400 ~ 800 volts) is not only and is meaned high power consumption, to drive integrated circuit (driver IC) design in pulse, the rise time and fall time specification define and withstand voltage degree on element material and useful life etc. are all very large problems.
Summary of the invention
One of main purpose of the present invention is to provide a kind of field emission component and field emission display device, by arranging pattern dielectric layer between cathode electrode and gate electrode, reduces gate drive voltage.
For reaching above-mentioned purpose, the invention provides a kind of field emission component, comprising a first substrate, a second substrate, one first electrode, one second electrode, a third electrode and a pattern dielectric layer.Second substrate is oppositely arranged with first substrate.First electrode is arranged at first substrate on one first inner surface of second substrate.Second electrode is arranged at second substrate on one second inner surface of first substrate.Third electrode is arranged on the second inner surface of second substrate.Pattern dielectric layer is arranged on the second inner surface of second substrate, and pattern dielectric layer is arranged between the second electrode and third electrode.Pattern dielectric layer is disconnected from each other with the second electrode, and pattern dielectric layer is disconnected from each other with third electrode.One first thickness of pattern dielectric layer is one second thickness being greater than the second electrode substantially, and the first thickness of pattern dielectric layer is one the 3rd thickness being greater than third electrode substantially.
This second electrode and this third electrode are made up of same material layer.
This second electrode and this third electrode have multiple branch electrodes respectively, and respectively this branch electrodes is setting interlaced with each other.
This pattern dielectric layer is arranged between this second electrode and this third electrode on a direction being parallel to this second substrate.
One dielectric constant of this pattern dielectric layer is between 1 to 10 substantially.
One ratio of this first thickness of this pattern dielectric layer and this second thickness of this second electrode is between 1 to 100 substantially, and a ratio of the 3rd thickness of this first thickness of this pattern dielectric layer and this third electrode is between 1 to 100 substantially.
This pattern dielectric layer and this second interelectrode one first distance are the second distances be equal between this pattern dielectric layer and this third electrode substantially.
This pattern dielectric layer and this second interelectrode one first distance with a ratio of one the 3rd distance between this second electrode and this third electrode be between 0.01 to 0.4 substantially, and a second distance between this pattern dielectric layer and this third electrode with a ratio of the 3rd distance between this second electrode and this third electrode is between 0.01 to 0.4 substantially.
This first electrode is an anode electrode, and this second electrode is a cathode electrode, and this third electrode is a gate electrode.
This pattern dielectric layer and this second interelectrode one first distance are the second distances be less than or equal between this pattern dielectric layer and this third electrode substantially.
More comprise one first field emission source to be arranged on this cathode electrode.
This first electrode is an anode electrode, and this second electrode is first the moon/gate electrode, and this third electrode is second the moon/gate electrode.
More comprise one first field emission source to be arranged on this first the moon/gate electrode, and one second field emission source is arranged on this second the moon/gate electrode.
The type of drive of this first the moon/gate electrode and this second the moon/gate electrode comprises the type of drive of a use alternating voltage.
More comprise a fluorescent layer, be arranged between this first electrode and this second electrode and be arranged between this first electrode and this third electrode.
This pattern dielectric layer has a curved surfaces.
For reaching above-mentioned purpose, the invention provides a kind of field emission display device, comprising a first substrate, a second substrate, one first electrode, multiple second electrode, multiple third electrode, a fluorescent layer and at least one pattern dielectric layer.Second substrate is oppositely arranged with first substrate.First electrode is arranged at first substrate on one first inner surface of second substrate.Second electrode is arranged at second substrate on one second inner surface of first substrate.Third electrode is arranged on the second inner surface of second substrate.Each third electrode is arranged between adjacent two second electrodes.Fluorescent layer is arranged between the first electrode and the second electrode and is arranged between the first electrode and third electrode.Pattern dielectric layer is arranged on the second inner surface of second substrate, and pattern dielectric layer is arranged between two adjacent the second electrodes and third electrode.Pattern dielectric layer is disconnected from each other with the second electrode, and pattern dielectric layer is disconnected from each other with third electrode.One first thickness of pattern dielectric layer is one second thickness being greater than each second electrode substantially, and the first thickness of pattern dielectric layer is one the 3rd thickness being greater than each third electrode substantially.
More comprise at least one supporter, be arranged between this first substrate and this second substrate, in order to make to maintain a gap between this first substrate and this second substrate.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the field emission component of the first preferred embodiment of the present invention.
Fig. 2 A is the electric field situation schematic diagram of the field emission component of a comparative example of the present invention.
Fig. 2 B is the electric field situation schematic diagram of the field emission component of the first preferred embodiment of the present invention.
Fig. 3 is that the first preferred embodiment of the present invention compares schematic diagram with the electric field situation of the field emission component of comparative example.
Fig. 4 is the second electrode of the field emission component of the first preferred embodiment of the present invention and the upper schematic diagram of third electrode.
Fig. 5 is the schematic diagram of the field emission component of the second preferred embodiment of the present invention.
Fig. 6 is the schematic diagram of the field emission component of the 3rd preferred embodiment of the present invention.
Fig. 7 is the schematic diagram of the field emission component of the 4th preferred embodiment of the present invention.
Fig. 8 is the schematic diagram of the field emission display device of the 5th preferred embodiment of the present invention.
Fig. 9 is the schematic diagram of the field emission display device of the 6th preferred embodiment of the present invention.
Figure 10 is the schematic diagram of the field emission display device of the 7th preferred embodiment of the present invention.
Description of reference numerals
100 field emission component 110 first substrates
110S first inner surface 120 second substrate
120S second inner surface 130 first electrode
130A anode electrode 140 second electrode
141 branch electrodes 141B first the moon/gate electrodes
141C cathode electrode 150 third electrode
151 branch electrodes 150B second the moon/gate electrodes
150G gate electrode 160 pattern dielectric layer
162 curved surfaces 171 first field emission sources
172 second field emission source 180 fluorescent layers
180A first fluorescent layer 180B second fluorescent layer
180C the 3rd fluorescent layer 190 supporter
200 field emission component 300 field emission components
400 field emission component 500 field emission display devices
600 field emission display device 700 field emission display devices
A curve B curve
D1 first is apart from D2 second distance
D3 the 3rd distance T1 first thickness
T2 second thickness T3 the 3rd thickness
X direction
Embodiment
For making those skilled in the art further can understand the present invention, hereafter spy enumerates preferred embodiment of the present invention, and coordinates accompanying drawing, describe in detail constitution content of the present invention and the effect for reaching.
Please refer to Fig. 1.Fig. 1 is the schematic diagram of the field emission component of the first preferred embodiment of the present invention.For convenience of description, each graphic being only of the present invention is illustrated to be easier to understand the present invention, and its detailed ratio can adjust according to the demand of design.As shown in Figure 1, the present embodiment provides a field emission component 100.Field emission component 100 comprises first substrate 110, second substrate 120,1 first electrode 130,1 second electrode 140, third electrode 150 and a pattern dielectric layer 160.Second substrate 120 is oppositely arranged with first substrate 130.First electrode 130 is arranged at first substrate 110 on one first inner surface 110S of second substrate 120.Second electrode 140, third electrode 150 and pattern dielectric layer 160 are arranged at second substrate 120 on one second inner surface 120S of first substrate 110.In other words, the second electrode 140, third electrode 150 and pattern dielectric layer 160 are preferably the setting of rough copline.The material layer of first electrode 130 of the present embodiment can comprise transparent conductive material such as tin indium oxide (indiumtin oxide, ITO), indium zinc oxide (indium zinc oxide, IZO) with aluminum zinc oxide (aluminum zincoxide, AZO), the mixed layer of above-mentioned material and composite bed, or other transparent conductive materials be applicable to, but not as limit.Second electrode 140 of the present embodiment is preferably with third electrode 150 and is made up of same material layer, above-mentioned material layer can comprise transparent conductive material such as tin indium oxide, indium zinc oxide and aluminum zinc oxide or other nontransparent electric conducting material such as composite beds of silver, aluminium, copper, magnesium, molybdenum, above-mentioned material or the alloy of above-mentioned material be applicable to, but not as limit.Pattern dielectric layer 160 is arranged between the second electrode 140 and third electrode 150.Pattern dielectric layer 160 is disconnected from each other with the second electrode 140, and pattern dielectric layer 160 is disconnected from each other with third electrode 150.Illustrate further, pattern dielectric layer 160 be preferably be parallel to second substrate 120 in one a direction X on be arranged between the second electrode 140 and third electrode 150, but not as limit.In the present embodiment, one first thickness T1 of pattern dielectric layer 160 is the one second thickness T2 being greater than the second electrode 140 substantially, and the first thickness T1 of pattern dielectric layer 160 is one the 3rd thickness T3 being greater than third electrode 150 substantially.
In addition, in order to reach preferably combined effect, one ratio of the first thickness T1 of pattern dielectric layer 160 and the second thickness T2 of the second electrode 140 is preferably substantially between 1 to 100, and a ratio of the 3rd thickness T3 of the first thickness T1 of pattern dielectric layer 160 and third electrode 150 is preferably substantially between 1 to 100.One first distance D1 between pattern dielectric layer 160 and the second electrode 140 is preferably the second distance D2 be equal to substantially between pattern dielectric layer 160 and third electrode 150, but not as limit.The first distance D1 between pattern dielectric layer 160 and the second electrode 140 is preferably substantially between 0.01 to 0.4 with a ratio of one the 3rd distance D3 between the second electrode 140 and third electrode 150, and the second distance D2 between pattern dielectric layer 160 and third electrode 150 follows a ratio of the 3rd distance D3 between the second electrode 140 and third electrode 150 to be preferably substantially between 0.01 to 0.4, to reach preferably fiting effect.On the other hand, a dielectric constant of pattern dielectric layer 160 is preferably substantially between 1 to 10, to impact the electric field situation between the second electrode 140 and third electrode 150.Pattern dielectric layer 160 is better comprises inorganic material such as silicon nitride (siliconnitride), silica (silicon oxide) and silicon oxynitride (silicon oxynitride), organic material such as acrylic resin (acrylic resin), pi (polyimide) or other material with above-mentioned dielectric constant properties be applicable to.Pattern dielectric layer 160 is preferably has a curved surfaces 162, and it is gentler that this curved surfaces 162 can contribute to Electric Field Distribution, more meets the demand of Electric Field Distribution.
What deserves to be explained is, as shown in Figure 1, in the present embodiment, the first electrode 130 is better comprises an anode electrode 130A, and the second electrode 140 is better comprises a cathode electrode 140C, and third electrode 150 is better comprises a gate electrode 150G.Under the collocation situation of this electrode, the first distance D1 between pattern dielectric layer 160 and the second electrode 140 is preferably the second distance D2 be less than or equal to substantially between pattern dielectric layer 160 and third electrode 150, but not as limit.In addition, field emission component 100 more can comprise one first field emission source (emitter) 171 and is arranged on cathode electrode 140C.First field emission source 171 is better comprises a carbon nanotube (carbon nano-tube) material, but not as limit, and also can comprise the material that other have electron emission function.Such as the first field emission source 171 can also be Flied emission tip (Tip), and its material can be selected from molybdenum, tungsten, chromium etc. and alloy or laminated thereof.This, known by the usual knowledge in this area, therefore repeats no more.
Please refer to Fig. 2 A, Fig. 2 B and Fig. 3, and please also refer to Fig. 1.Fig. 2 A is the electric field situation schematic diagram of the field emission component of a comparative example of the present invention.Fig. 2 B is the electric field situation schematic diagram of the field emission component of the first preferred embodiment of the present invention.Fig. 3 is that the first preferred embodiment of the present invention compares schematic diagram with the electric field situation of the field emission component of comparative example.Fig. 2 A is a comparative example, wherein between the second electrode 140 and third electrode 150, nothing arranges the equipotential line distribution situation of pattern dielectric layer, Fig. 2 B is the equipotential line distribution situation being provided with pattern dielectric layer 160 between the second electrode 140 and third electrode 150, and Fig. 3 compares distribution situation with or without the electric field strength under the situation arranging pattern dielectric layer 160.As shown in Fig. 2 A and Fig. 2 B, arranging of pattern dielectric layer 160 can make original equipotential line push to second electrode 140 on both sides with third electrode 150, space length between equipotential line and equipotential line is narrowed, and then makes at the second electrode 140 and the electric field strength grow on third electrode 150.Therefore, cathode electrode 140C can be comprised at second electrode 140 of the present embodiment, and under third electrode 150 can comprise the situation of gate electrode 150G, gate electrode 150G applies identical voltage, the height that the electric field having the negative electrode of additional pattern dielectric layer 160 to measure on same position can come than the negative electrode not adding pattern dielectric layer 160.Illustrate further, as shown in Figure 3, x-axis is cathode electrode frontier distance, y-axis is electric field strength, curve A represents without the electric field strength situation arranging pattern dielectric layer between the second electrode 140 and third electrode 150, and curve B represents the electric field strength situation having between the second electrode 140 and third electrode 150 and arrange pattern dielectric layer 160.The data background of Fig. 3 is 7 at the dielectric constant of pattern dielectric layer 160, the ratio of the first thickness T1 and the second thickness T2 is 6, the ratio of the first thickness T1 and the 3rd thickness T3 is 6, and the 3rd distance D3 is under the situation of 2 centimetres, 2000 volts are applied in anode electrode 130A, 600 volts are applied in gate electrode 150G, and gained under making the situation of cathode electrode 140C ground connection.By curve A and curve B in the boundary closest to cathode electrode 140C electric field strength difference compared with, can learn that after arranging pattern dielectric layer 160, electric field strength can strengthen about 35%.
Please refer to Fig. 4, and please also refer to Fig. 1.Fig. 4 is the second electrode of the field emission component of the first preferred embodiment of the present invention and the upper schematic diagram of third electrode.As shown in Figure 4, second electrode 140 of the present embodiment is preferably has multiple branch electrodes 141, and third electrode 150 is also better has multiple branch electrodes 151.Each branch electrodes 141 is preferably setting interlaced with each other, to obtain preferably Flied emission effect with each branch electrodes 151.
Hereafter the different embodiments for array base palte of the present invention are described, and are simplified illustration, below illustrate that the place mainly for each embodiment is different is described in detail, and no longer identical place is repeated.In addition, element identical in various embodiments of the present invention indicates with identical label, is beneficial to check one against another between each embodiment.
Please refer to Fig. 5.Fig. 5 is the schematic diagram of the field emission component of the second preferred embodiment of the present invention.As shown in Figure 5, the place that the field emission component 200 of the present embodiment is different from above-mentioned first preferred embodiment is, in the present embodiment, first electrode 130 is better comprises an anode electrode 130A, second electrode 140 is better comprises first the moon/gate electrode 140B, and third electrode 150 is better comprises second the moon/gate electrode 150B.Under the collocation situation of this electrode, better one first field emission source 171 that can more comprise of field emission component 200 is arranged on first the moon/gate electrode 140B, and one second field emission source 172 be arranged on second the moon/gate electrode 150B, that is first the moon/gate electrode 140B and second the moon/visual situation of gate electrode 150B are respectively as gate electrode or cathode electrode.The field emission component 200 of the present embodiment is except first the moon/gate electrode 140B, second the moon/gate electrode 150B and the second field emission source 172, the setting of all the other each parts is similar to the field emission component 100 of above-mentioned first preferred embodiment to material behavior, therefore repeats no more at this.What deserves to be explained is, because first the moon/gate electrode 140B and second the moon/visual situation of gate electrode 150B are respectively as gate electrode or cathode electrode, therefore the better type of drive or comprising a use alternating voltage (AC) of the type of drive of each first the moon of the present embodiment/gate electrode 140B and each second the moon/gate electrode 150B uses phase deviation (phase shift) type of drive of direct voltage, but not as limit.
Please refer to Fig. 6.Fig. 6 is the schematic diagram of the field emission component of the 3rd preferred embodiment of the present invention.As shown in Figure 6, the place that the field emission component 300 of the present embodiment is different from above-mentioned first preferred embodiment is, in the present embodiment, the first distance D1 between pattern dielectric layer 160 and the second electrode 140 is preferably the second distance D2 be less than between pattern dielectric layer 160 and third electrode 150, to be a cathode electrode 140C at the second electrode 140 and under third electrode 150 is the situation of a gate electrode 150G, further to promote the electric field strength at cathode electrode 140C edge.The field emission component 300 of the present embodiment is except pattern dielectric layer 160 setting position is comparatively close to except cathode electrode 140C, the setting of all the other each parts is similar to the field emission component 100 of above-mentioned first preferred embodiment to material behavior, therefore repeats no more at this.
Please refer to Fig. 7.Fig. 7 is the schematic diagram of the field emission component of the 4th preferred embodiment of the present invention.As shown in Figure 7, the place that the field emission component 400 of the present embodiment is different from above-mentioned first preferred embodiment is, the field emission component 400 of the present embodiment more comprises a fluorescent layer 180, is arranged between the first electrode 130 and the second electrode 140 and is arranged between the first electrode 130 and third electrode 150.In other words, fluorescent layer 180 be preferably be arranged at the first electrode 130 in the face of the second electrode 140 and third electrode 150 one on the surface, but not as limit.The field emission component 400 of the present embodiment is except fluorescent layer 180, the setting of all the other each parts is similar to the field emission component 100 of above-mentioned first preferred embodiment to material behavior, therefore repeats no more at this.
Please refer to Fig. 8.Fig. 8 is the schematic diagram of the field emission display device of the 5th preferred embodiment of the present invention.As shown in Figure 8, the field emission display device 500 of the present embodiment comprises first substrate 110, second substrate 120,1 first electrode 130, multiple second electrode 140, multiple third electrode 150, fluorescent layer 180, multiple pattern dielectric layer 160, multiple first emission source 171 and supporter 190.Second substrate 120 is oppositely arranged with first substrate 110.First electrode 130 is arranged at first substrate 110 on the first inner surface 110S of second substrate 120.Second electrode 140, third electrode 150 and pattern dielectric layer 160 are arranged at second substrate 120 on the second inner surface 120S of first substrate 110.Each third electrode 150 is arranged between adjacent two second electrodes 140.Fluorescent layer 180 is arranged between the first electrode 130 and the second electrode 140 and is arranged between the first electrode 130 and third electrode 150.Pattern dielectric layer 160 is arranged between two adjacent the second electrodes 140 and third electrode 150.Pattern dielectric layer 160 is disconnected from each other with the second electrode 140, and pattern dielectric layer 160 is disconnected from each other with third electrode 150.One first thickness T1 of each pattern dielectric layer 160 is the one second thickness T2 being greater than each second electrode 140 substantially, and the first thickness T1 of pattern dielectric layer 160 is one the 3rd thickness T3 being greater than each third electrode 150 substantially.What deserves to be explained is, in the present embodiment, the first electrode 130 is better comprises an anode electrode 130A, and each second electrode 140 is better comprises a cathode electrode 140C, and each third electrode 150 is better comprises a gate electrode 150G.Under the collocation situation of this electrode, the first distance D1 between pattern dielectric layer 160 and the second electrode 140 is preferably the second distance D2 be less than or equal to substantially between pattern dielectric layer 160 and third electrode 150, but not as limit.In addition, the first field emission source 171 is preferably and is arranged on cathode electrode 140C, but not as limit.Supporter 190 is arranged between first substrate 110 and second substrate 120, in order to make to maintain a gap between first substrate 110 and second substrate 120.In the present embodiment, each second electrode 140, each third electrode 150 and each pattern dielectric layer 160 set-up mode are to each other similar to above-mentioned first preferred embodiment to thickness situation of arranging in pairs or groups substantially, repeat no more at this.What deserves to be explained is, the fluorescent layer 180 of the present embodiment can comprise one first fluorescent layer 180A, one second fluorescent layer 180B and the 3rd fluorescent layer 180C respectively from the second different electrodes 140 and third electrode 150 is corresponding arranges.It can be made to produce different exciting lights respectively by adjusting the first fluorescent layer 180A, the second fluorescent layer 180B and the 3rd fluorescent layer 180C other composition each, and then can be used to the display frame producing different colours.
Please refer to Fig. 9.Fig. 9 is the schematic diagram of the field emission display device of the 6th preferred embodiment of the present invention.As shown in Figure 9, the place that the field emission display device 600 of the present embodiment is different from above-mentioned 5th preferred embodiment is, in the present embodiment, first electrode 130 is better comprises an anode electrode 130A, each second electrode 140 is better comprises first the moon/gate electrode 140B, and each third electrode 150 is better comprises second the moon/gate electrode 150B.Under the collocation situation of this electrode, field emission display device 600 is better to be comprised multiple first field emission source 171 and is arranged at respectively on each first the moon/gate electrode 140B, and multiple second field emission source 172 is arranged on second the moon/gate electrode 150B respectively.The field emission display device 600 of the present embodiment is except first the moon/gate electrode 140B, second the moon/gate electrode 150B and the second field emission source 172, the setting of all the other each parts is similar to the field emission display device 500 of above-mentioned 5th preferred embodiment to material behavior, therefore repeats no more at this.What deserves to be explained is, because first the moon/gate electrode 140B and second the moon/visual situation of gate electrode 150B are respectively as gate electrode or cathode electrode, therefore better type of drive or the phase deviation type of drive comprising a use alternating voltage of the type of drive of each first the moon of the present embodiment/gate electrode 140B and each second the moon/gate electrode 150B, but not as limit.
Please refer to Figure 10.Figure 10 is the schematic diagram of the field emission display device of the 7th preferred embodiment of the present invention.As shown in Figure 10, the place that the field emission display device 700 of the present embodiment is different from above-mentioned 5th preferred embodiment is, in the present embodiment, the first distance D1 between pattern dielectric layer 160 and the second electrode 140 is preferably the second distance D2 be less than between pattern dielectric layer 160 and third electrode 150, to be a cathode electrode 140C at the second electrode 140 and under third electrode 150 is the situation of a gate electrode 150G, further to promote the electric field strength at each cathode electrode 140C edge.The field emission display device 700 of the present embodiment is except each pattern dielectric layer 160 setting position is comparatively close to except each cathode electrode 140C, the setting of all the other each parts is similar to the field emission display device 500 of above-mentioned 5th preferred embodiment to material behavior, therefore repeats no more at this.
Comprehensive the above, field emission component of the present invention and field emission display device are used between cathode electrode and gate electrode to arrange pattern dielectric layer, make to effectively reduce grid voltage under identical luminous efficiency, and then reduce overall power and related elements is made moderate progress in the problem in designing and employing life-span.
The foregoing is only preferred embodiment of the present invention, all equalizations done according to claims of the present invention change and modify, and all should belong to protection scope of the present invention.
Claims (10)
1. a field emission component, comprising:
One first substrate;
One second substrate, is oppositely arranged with this first substrate;
One first electrode, is arranged at this first substrate on one first inner surface of this second substrate;
One second electrode, is arranged at this second substrate on one second inner surface of this first substrate;
One third electrode, is arranged on this second inner surface of this second substrate; And
One pattern dielectric layer, is arranged on this second inner surface of this second substrate, and this pattern dielectric layer is arranged between this second electrode and this third electrode;
Wherein this pattern dielectric layer is disconnected from each other with this second electrode, this pattern dielectric layer is disconnected from each other with this third electrode, one first thickness of this pattern dielectric layer is one second thickness being greater than this second electrode, and this first thickness of this pattern dielectric layer is one the 3rd thickness being greater than this third electrode;
This pattern dielectric layer has a curved surfaces;
This pattern dielectric layer and this second interelectrode one first distance are between 0.01 to 0.4 with a ratio of one the 3rd distance between this second electrode and this third electrode, and a second distance between this pattern dielectric layer and this third electrode is between 0.01 to 0.4 with a ratio of the 3rd distance between this second electrode and this third electrode;
This first electrode is an anode electrode, and this second electrode is a cathode electrode, and this third electrode is a gate electrode, and this pattern dielectric layer and this second interelectrode one first distance are the second distances be less than between this pattern dielectric layer and this third electrode.
2. field emission component as claimed in claim 1, it is characterized in that, this second electrode and this third electrode are made up of same material layer.
3. field emission component as claimed in claim 1, it is characterized in that, this second electrode and this third electrode have multiple branch electrodes respectively, and respectively this branch electrodes is setting interlaced with each other.
4. field emission component as claimed in claim 1, is characterized in that, this pattern dielectric layer is arranged between this second electrode and this third electrode on a direction being parallel to this second substrate.
5. field emission component as claimed in claim 1, it is characterized in that, a dielectric constant of this pattern dielectric layer is between 1 to 10.
6. field emission component as claimed in claim 1, it is characterized in that, one ratio of this first thickness of this pattern dielectric layer and this second thickness of this second electrode is between 1 to 100, and a ratio of the 3rd thickness of this first thickness of this pattern dielectric layer and this third electrode is between 1 to 100.
7. field emission component as claimed in claim 1, is characterized in that, more comprise one first field emission source and be arranged on this cathode electrode.
8. field emission component as claimed in claim 1, is characterized in that, more comprise a fluorescent layer, be arranged between this first electrode and this second electrode and be arranged between this first electrode and this third electrode.
9. a field emission display device, comprising:
One first substrate;
One second substrate, is oppositely arranged with this first substrate;
One first electrode, is arranged at this first substrate on one of this second substrate the first inner surface;
Multiple second electrode, is arranged at this second substrate on one second inner surface of this first substrate;
Multiple third electrode, is arranged on this second inner surface of this second substrate, and wherein respectively this third electrode is arranged between adjacent two these second electrodes;
One fluorescent layer, is arranged between this first electrode and the plurality of second electrode and is arranged between this first electrode and the plurality of third electrode; And
At least one pattern dielectric layer, is arranged on this second inner surface of this second substrate, and this pattern dielectric layer be arranged at two adjacent between this second electrode and this third electrode;
Wherein this pattern dielectric layer is disconnected from each other with the plurality of second electrode, this pattern dielectric layer is disconnected from each other with the plurality of third electrode, one first thickness of this pattern dielectric layer is one second thickness being greater than respectively this second electrode, and this first thickness of this pattern dielectric layer is one the 3rd thickness being greater than respectively this third electrode;
This pattern dielectric layer has a curved surfaces;
This pattern dielectric layer and this second interelectrode one first distance are between 0.01 to 0.4 with a ratio of one the 3rd distance between this second electrode and this third electrode, and a second distance between this pattern dielectric layer and this third electrode is between 0.01 to 0.4 with a ratio of the 3rd distance between this second electrode and this third electrode;
This first electrode is an anode electrode, and this second electrode is a cathode electrode, and this third electrode is a gate electrode, and this pattern dielectric layer and this second interelectrode one first distance are the second distances be less than between this pattern dielectric layer and this third electrode.
10. field emission display device as claimed in claim 9, is characterized in that, more comprise at least one supporter, be arranged between this first substrate and this second substrate, in order to make to maintain a gap between this first substrate and this second substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100148339 | 2011-12-23 | ||
| TW100148339A TWI437602B (en) | 2011-12-23 | 2011-12-23 | Field emission unit and field emission display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102592925A CN102592925A (en) | 2012-07-18 |
| CN102592925B true CN102592925B (en) | 2015-03-11 |
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| CN201210067736.1A Expired - Fee Related CN102592925B (en) | 2011-12-23 | 2012-03-12 | Field emission element and field emission display device |
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| CN (1) | CN102592925B (en) |
| TW (1) | TWI437602B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1746634A2 (en) * | 2005-07-21 | 2007-01-24 | Samsung SDI Co., Ltd. | Electron emission device, electron emission type backlight unit and flat display appaatus having the same |
| CN101308755A (en) * | 2007-05-17 | 2008-11-19 | 东元电机股份有限公司 | Plane emission type cathode construction of field emission display apparatus |
| CN102097272A (en) * | 2011-01-10 | 2011-06-15 | 福州大学 | Triode structured field emission display (FED) with anode and grid on same substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3737696B2 (en) * | 2000-11-17 | 2006-01-18 | 株式会社東芝 | Method for manufacturing horizontal field emission cold cathode device |
| JP4115410B2 (en) * | 2004-03-12 | 2008-07-09 | キヤノン株式会社 | Electron emitting device, electron source, image display device manufacturing method, and electron emitting device driving method |
-
2011
- 2011-12-23 TW TW100148339A patent/TWI437602B/en not_active IP Right Cessation
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1746634A2 (en) * | 2005-07-21 | 2007-01-24 | Samsung SDI Co., Ltd. | Electron emission device, electron emission type backlight unit and flat display appaatus having the same |
| CN101308755A (en) * | 2007-05-17 | 2008-11-19 | 东元电机股份有限公司 | Plane emission type cathode construction of field emission display apparatus |
| CN102097272A (en) * | 2011-01-10 | 2011-06-15 | 福州大学 | Triode structured field emission display (FED) with anode and grid on same substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI437602B (en) | 2014-05-11 |
| TW201327613A (en) | 2013-07-01 |
| CN102592925A (en) | 2012-07-18 |
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