CN102583352B - Thermal transfer method of graphene thin film - Google Patents
Thermal transfer method of graphene thin film Download PDFInfo
- Publication number
- CN102583352B CN102583352B CN2012100528507A CN201210052850A CN102583352B CN 102583352 B CN102583352 B CN 102583352B CN 2012100528507 A CN2012100528507 A CN 2012100528507A CN 201210052850 A CN201210052850 A CN 201210052850A CN 102583352 B CN102583352 B CN 102583352B
- Authority
- CN
- China
- Prior art keywords
- copper foil
- target substrate
- thin film
- graphene film
- graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 title abstract 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000011889 copper foil Substances 0.000 claims abstract description 33
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229960001866 silicon dioxide Drugs 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000000879 optical micrograph Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
The invention relates to a thermal transfer method of a graphene thin film, which comprises the following steps of: firstly growing the graphene thin film on the surface of a copper foil by utilizing a chemical vapor deposition device; then fixing and reversely buckling one end of the copper coil on the edge of a target substrate, and flatly attaching onto the surface of the target substrate; successively tidily putting the target substrate and the copper coil on a supporting table and slowly pushing into a heat transfer machine roller, and transferring the graphene thin film at one side of the copper foil to the target substrate by utilizing the pressure and the heat of the roller; and finally fixing the movable end of the copper foil, standing and cooling for a period of time, and taking the copper foil down, so that the graphene thin film on the surface of the one side of the copper foil is transferred onto the target substrate. The graphene thermal transfer method provided by the invention has the beneficial effects that the operation is convenient, the process is simple, an organic medium is not added in the whole operation process, the graphene thin film with a size of tens of micrometers or above can be successfully transferred to any target substrate, and the thermal transfer method is suitable for the development, the research and other fields of graphene semiconductor devices.
Description
Technical field
The present invention relates to field of nanometer material technology, relate to a kind of thermal transfer method of graphene film.
Background technology
Desirable graphene sheet layer is proper two-dimentional monocrystal material, can think a kind of carbon allotropic substance of novelty, and can be rolled into zero dimension soccerballene, be curled into one dimension carbon nanotube, be stacked to three-dimensional graphite.The behavior of dirac fermion and other marvellous physical propertys due to its unique crystalline network, current carrier, caused people's extensive concern in the last few years.At present, utilizing chemical gas-phase method is to prepare a kind of extremely important method of graphene film.
Hot transfer printing is an emerging typography, utilizes the cylindrical roller of heat transfer machine evenly to exert pressure and to conduct heat, and generally is used for printed circuit board and plane xylopyrography.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, a kind of thermal transfer method of graphene film is provided.
The present invention mainly utilizes the uniform heat of heat transfer machine roller and pressure, and the graphene film big area is transferred in the arbitrary target substrate with no damage.
The inventive method comprises the following steps:
Step 1: utilize chemical vapor deposition unit (CVD) at the copper foil both sides of 25 micron thick difference growing graphene film;
Step 2: by Copper Foil one end left-hand thread and be fixed on the edge of target substrate, make copper foil be flattened on the target substrate surface;
Step 3: fitly be put on brace table together with Copper Foil by target substrate, and slowly push under the heat transfer machine roller, utilize pressure and the heat of roller that the graphene film of Copper Foil one side is transferred on target substrate, this step need to repeat 2～4 times, prevents in operating process that target substrate and Copper Foil from misplacing;
Step 4: take off the combination of target substrate and Copper Foil from heat transfer machine, the copper foil the other end (movable end) is fixed on to its original position, after standing cooling for some time, take off copper foil, obtain being transferred to the graphene film on target substrate surface.
In such scheme, the described target substrate of step 2 is silicon base, silicon-dioxide substrate, metal base or plastic-substrates.
Graphene thermal transfer method provided by the invention, easy to operate, technique is simple, and whole operating process does not have the participation of organic medium, can successfully shift the graphene film of tens of microns and above size to any target substrate, be applicable to the fields such as the exploitation of Graphene semiconducter device and research.
The accompanying drawing explanation
Fig. 1 utilizes heat transfer machine to shift the schema of graphene film.
Fig. 2 is the graphene film Raman image of transferring to silicon base.
Fig. 3 is the graphene film optical microscope image of transferring to silicon base.
Fig. 4 is the graphene film optical microscope image of transferring to the silicon-dioxide substrate.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
Embodiment 1: the graphene film on copper foil is transferred on silicon base.
At first utilize the CVD device to grow graphene film on the copper foil of 25 micron thick; Then silicon base is carried out to deionized water, ethanol, acetone ultrasonic cleaning successively, and utilize the oven for drying silicon base; The copper foil that then surface growth is had to a graphene film fixedly left-hand thread at silicon base edge (as shown in Figure 1); Secondly the combination level of silicon base and Copper Foil is placed on brace table, and it is slowly pushed to the heat transfer machine roller, wherein the heat transfer machine temperature setting is set to 130 ℃, and the hot padding process loops 2 times; Finally the combination of silicon base and Copper Foil is taken off from heat transfer machine, room temperature is after standing cooling 2 hours, and slowly, from the Copper Foil movable end copper foil of tearing, the graphene film of Copper Foil one side surface is transferred on silicon base like this.In the graphene film Raman image on silicon base surface as shown in Figure 2, the defect that wherein the very low explanation transfer process in D peak causes is very little, and the G peak height may be because make graphene film generation stratification in transfer process in the 2D peak.In the graphene film optical microscope image of silicon face as shown in Figure 3, wherein complete graphene film can reach 50 microns and above size.
Embodiment 2: the graphene film on copper foil is transferred in the silicon-dioxide substrate.
Concrete steps are similar to Example 1, but target substrate is the silicon-dioxide substrate, and wherein the graphene film optical microscope image of silica sphere as shown in Figure 4.
Embodiment 3: the graphene film on copper foil is transferred on metal base.
Concrete steps are similar to Example 1, but target substrate is metal base.
Embodiment 4: the graphene film on copper foil is transferred on plastic-substrates.
Concrete steps are similar to Example 1, but target substrate is plastic-substrates.
Claims (1)
1. the thermal transfer method of a graphene film is characterized in that the method comprises the following steps:
Step 1. utilizes chemical vapor deposition unit at the copper foil both sides of 25 micron thick difference growing graphene film;
Step 2. is by Copper Foil one end left-hand thread and be fixed on the edge of target substrate, makes copper foil be flattened on the target substrate surface;
Step 3. fitly is put into target substrate on brace table together with Copper Foil, and slowly pushes under the heat transfer machine roller, utilizes the pressure of roller and heat that the graphene film of Copper Foil one side is transferred on target substrate, and this step need to repeat 2～4 times;
Step 4. is taken off the combination of target substrate and Copper Foil from heat transfer machine, and the copper foil the other end is fixed on to its original position, after standing cooling for some time, takes off copper foil, obtains being transferred to the graphene film on target substrate surface;
The described target substrate of step 2 is silicon base, silicon-dioxide substrate, metal base or plastic-substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100528507A CN102583352B (en) | 2012-03-02 | 2012-03-02 | Thermal transfer method of graphene thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100528507A CN102583352B (en) | 2012-03-02 | 2012-03-02 | Thermal transfer method of graphene thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102583352A CN102583352A (en) | 2012-07-18 |
| CN102583352B true CN102583352B (en) | 2013-12-11 |
Family
ID=46472716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100528507A Expired - Fee Related CN102583352B (en) | 2012-03-02 | 2012-03-02 | Thermal transfer method of graphene thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102583352B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103072976B (en) * | 2012-12-28 | 2015-01-14 | 同济大学 | Transfer method of graphene or oxidized graphene thin film |
| CN103342472A (en) * | 2013-07-11 | 2013-10-09 | 常州二维碳素科技有限公司 | Method for transferring graphene film |
| CN103358613B (en) * | 2013-07-22 | 2016-05-11 | 常州二维碳素科技股份有限公司 | Prepare the method for high permeability Graphene |
| CN104582295A (en) * | 2013-10-25 | 2015-04-29 | 绿点高新科技股份有限公司 | Forming method of graphene circuit pattern and product thereof |
| CN104445172B (en) * | 2014-12-11 | 2017-05-10 | 重庆墨希科技有限公司 | Tooling device for transferring graphene thin film |
| US9962914B2 (en) | 2016-01-21 | 2018-05-08 | King Abdulaziz University | Method for transferring a large-area graphene sheet |
| CN106435727B (en) * | 2016-11-17 | 2019-01-01 | 北京大学 | A kind of method that clean transfer prepares the hanging graphene of high integrity degree |
| CN110165366B (en) * | 2019-04-22 | 2021-02-19 | 浙江大学 | Thermal transfer printing graphene antenna and preparation method and application thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011081440A2 (en) * | 2009-12-30 | 2011-07-07 | 성균관대학교산학협력단 | Roll-to-roll doping method of graphene film, and doped graphene film |
| CN101760724B (en) * | 2010-01-26 | 2011-10-12 | 电子科技大学 | Method for preparing graphene membrane electrode with overlarge area and high quality |
| CN102351175A (en) * | 2011-11-03 | 2012-02-15 | 东南大学 | High-quality transfer method of graphene prepared by chemical vapor deposition method |
-
2012
- 2012-03-02 CN CN2012100528507A patent/CN102583352B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102583352A (en) | 2012-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102583352B (en) | Thermal transfer method of graphene thin film | |
| EP2719797B1 (en) | Method for transferring graphene nondestructively | |
| Liang et al. | Novel Cu nanowires/graphene as the back contact for CdTe solar cells | |
| US8419880B2 (en) | Method of transferring graphene | |
| CN102020271B (en) | Method of manufacturing graphene and graphene manufactured by the method | |
| US9573814B2 (en) | High-throughput graphene printing and selective transfer using a localized laser heating technique | |
| CN105197875A (en) | Method for preparing patterned carbon nano tube array and carbon nano tube device | |
| CN102759467B (en) | Method for manufacturing multi-layer graphene TEM (Transverse Electric and Magnetic Field) sample | |
| CN102496421A (en) | Method for preparing large-area flexible conductive film | |
| MY150000A (en) | Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution | |
| Zhou et al. | Directional architecture of graphene/ceramic composites with improved thermal conduction for thermal applications | |
| CN104477886A (en) | Folded graphene and controllable preparation method thereof | |
| CN104973584B (en) | The transfer method of carbon nano pipe array and the preparation method of carbon nano tube structure | |
| CN102807210B (en) | Method for preparing graphene by biomass derived carbonaceous mesophase | |
| CN103359722B (en) | Preparation method of narrow graphene nanoribbons | |
| TWI687377B (en) | Transfer of monolayer graphene onto flexible glass substrates | |
| US20130266739A1 (en) | Process for forming carbon film or inorganic material film on substrate by physical vapor deposition | |
| CN110044251B (en) | Strain detection sensor based on graphene film and preparation method thereof | |
| CN106629685B (en) | A kind of three-dimensional graphene foam and preparation method thereof with multilevel structure | |
| CN104129752A (en) | Manufacturing method of cross-scale micro-nano folded structure | |
| CN107093558A (en) | The preparation method of inorganic thin-film transistors, flexible display apparatus | |
| CN105006482A (en) | Preparation method of graphene field effect transistor | |
| CN102417175A (en) | Transfer method of carbon nano tube bundle at room temperature | |
| CN104386675A (en) | Method for preparing graphene from solid carbon source | |
| CN104108704A (en) | Graphene transfer method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131211 Termination date: 20140302 |