CN102568657A - Manufacture method of transparent conductive layer - Google Patents
Manufacture method of transparent conductive layer Download PDFInfo
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- CN102568657A CN102568657A CN2012100410755A CN201210041075A CN102568657A CN 102568657 A CN102568657 A CN 102568657A CN 2012100410755 A CN2012100410755 A CN 2012100410755A CN 201210041075 A CN201210041075 A CN 201210041075A CN 102568657 A CN102568657 A CN 102568657A
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Abstract
The invention provides a manufacture method of a transparent conductive layer, which comprises forming a metal layer; depositing at least one graphene layer on the metal layer; etching the graphene layer to form a waffle-like pattern; providing a substrate; and transferring the graphene layer onto the substrate. The invention can increase transmittance of the conductive layer, and simultaneously reduce resistance.
Description
Technical field
The present invention relates to a kind of manufacturing approach of transparency conducting layer, relate in particular to a kind of manufacturing approach of Graphene transparency conducting layer.
Background technology
LCD (Liquid Crystal Display is abbreviated as LCD) is the display device of planar ultra-thin, and it is made up of the colour or the monochrome pixels of some, is positioned over light source or reflecting surface the place ahead.The LCD power consumption is very low, and therefore extremely engineer's favor is applicable to the electronic equipment that uses battery.Its cardinal principle is to produce point, line, surface with the galvanism liquid crystal molecule to cooperate the back fluorescent tube to constitute picture.Transparent conducting glass then is one of three big main materials of LCD (LCD).Why LCD can show specific figure; Utilize the electrically conducting transparent electrolemma on the electro-conductive glass exactly; Process the electrode of given shape through etching, after electro-conductive glass is processed liquid crystal cell up and down, on these electrodes, add the appropriate voltage signal; Liquid crystal molecule with dipole moment is arranged by specific direction under electric field action, and then demonstrated and the corresponding figure of electrode wavelength.
At present; The transparent conductive film that is used for LCD (LCD) is mainly tin indium oxide (ITO); Because the exploitation of the indium (In) in the tin indium oxide (ITO) is difficult for and price is higher; Therefore there is the material of replacement tin indium oxide (ITO) to be developed successively; Like nano silver wire (nano-wire Ag), gather enedioxy thiophene (PEDOT), zinc oxide (ZnO), CNT (CNT), Graphene materials such as (Graphene), wherein there is the problem of selling at exorbitant prices in nano silver wire (nano-wire Ag), and its resistance and penetrance can mutual restriction; Exist the problem that resistance is too high and penetrance is low excessively and gather enedioxy thiophene (PEDOT) and CNT (CNT), and it is not good to gather the endurance and the stability of enedioxy thiophene (PEDOT).Graphene (Graphene) is a material newly developed; Because it has very high electron mobility, in semiconductor layer, and its penetrance at individual layer only can detract 2.3% by Application and Development widely; Be applied to the market of transparency conducting layer so also be expected; Yet, must at this moment Graphene (Graphene) growth multilayer can be reduced the penetrance of Graphene (Graphene) in order to obtain lower resistance.
In view of this, how designing a kind of Graphene transparency conducting layer, not only to be had low resistance but also to have the transparency conducting layer of high penetration, is the problem that the professional and technical personnel need address.
Summary of the invention
To must be with Graphene (Graphene) growth multilayer in the prior art, thereby can reduce this defective of the penetrance of Graphene (Graphene), the invention provides a kind of manufacturing approach of transparency conducting layer in order to obtain lower resistance.
According to one aspect of the present invention, a kind of manufacturing approach of transparency conducting layer is provided, wherein, comprising:
Form a metal level;
Deposit at least one deck graphene layer on said metal level;
The said graphene layer of etching forms waffle-like pattern;
One substrate is provided; And
Shift said graphene layer on said substrate.
Preferably, said metal level is copper metal layer or nickel metal layer.
Preferably, on said metal level, form graphene layer through low-pressure chemical vapor deposition or aumospheric pressure cvd method.
Preferably, the method through little shadow etching or laser ablation forms said waffle-like pattern.
According to another aspect of the present invention, a kind of manufacturing approach of transparency conducting layer is provided, wherein, comprising:
One substrate is provided;
The spray metal layer is on said substrate, and said metal level has waffle-like pattern; And
The growth graphene layer is on said substrate.
Preferably, said metal level is copper metal layer or nickel metal layer.
Preferably, adopt ink-jetting process to spray said metal level.
According to another aspect of the present invention, a kind of manufacturing approach of transparency conducting layer is provided, wherein, comprising:
One substrate is provided;
Form an amorphous silicon layer on said substrate;
Graphical said amorphous silicon layer becomes waffle-like pattern;
Said substrate is carried out metal replacement; And
The growth graphene layer is on said substrate.
Preferably, said metal is copper or nickel.
Adopt advantage of the present invention to have: through the graphene layer of on metal, growing up, to utilize metal to increase the conductivity of transparency conducting layer, and network-like, increase the penetrance of transparency conducting layer through graphene layer is patterned into.
Description of drawings
The reader with reference to advantages after the embodiment of the present invention, will become apparent various aspects of the present invention.Wherein,
Fig. 1 illustrates the manufacturing approach flow chart according to one aspect of the present invention transparency conducting layer.
Fig. 2 illustrates the manufacturing approach flow chart according to the another aspect of the present invention transparency conducting layer.
Fig. 3 illustrates the manufacturing approach flow chart according to another aspect transparency conducting layer of the present invention.
Embodiment
For technology contents that the application is disclosed is more detailed and complete, can be with reference to accompanying drawing and following various specific embodiments of the present invention, identical mark is represented same or analogous assembly in the accompanying drawing.Yet the embodiment that those of ordinary skill in the art should be appreciated that hereinafter to be provided is used for limiting the scope that the present invention is contained.In addition, accompanying drawing only is used for schematically explaining, does not draw according to its life size.
With reference to the accompanying drawings, the embodiment of various aspects of the present invention is done further to describe in detail.Obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.The present invention can also show as different forms, therefore is not limited in this illustrated example.Based on embodiments of the invention, the every other embodiment that those of ordinary skills are obtained under the prerequisite of not making creative work belongs to the scope that the present invention protects.
As previously mentioned, in the prior art, when utilizing Graphene,, tend to multiple-level stack, yet the penetrance of conductive layer can descend thereupon also in order to reduce resistance as transparency electrode.
In order to solve this puzzlement of the prior art, Fig. 1 illustrates the manufacturing approach flow chart according to one aspect of the present invention transparency conducting layer.
With reference to Fig. 1, in the present embodiment, the manufacturing approach of transparency conducting layer may further comprise the steps:
At first, form a metal level.Metal level can be copper metal layer, also can be nickel metal layer, but not as limit.
Secondly, deposit at least one deck graphene layer on metal level.In quartz ampoule, feed hydrogen and ethene, utilize the chemical vapour deposition technique one deck graphene layer at least of on metal level, growing up.The chemical vapour deposition technique here can be the aumospheric pressure cvd method, also can be Low Pressure Chemical Vapor Deposition.
Then, the etching graphene layer forms waffle-like pattern.Method through little shadow etching or laser ablation makes graphene layer have waffle-like pattern.
Once more, a substrate is provided.This substrate can be glass substrate, also can be soft transparency carrier, but not as limit.
At last, shift graphene layer on substrate.The graphene layer that will have network-like pattern is peeled off, and is transferred on the substrate.The substrate that forms at last can be used as transparency conducting layer and uses.
Fig. 2 illustrates the manufacturing approach flow chart according to the another aspect of the present invention transparency conducting layer.
With reference to Fig. 2, in the present embodiment, the manufacturing approach of transparency conducting layer may further comprise the steps:
At first, a substrate is provided.This substrate can be glass substrate, also can be soft transparency carrier, but not as limit.
Then, the spray metal layer is on substrate, and metal level has waffle-like pattern.Metal level can be copper metal layer, also can be nickel metal layer, but not as limit.Adopt ink-jetting process to be sprayed on spray metal layer on the substrate.
Secondly, the growth graphene layer is on substrate.Utilize the chemical vapour deposition technique one deck graphene layer at least of on metal level, growing up.The chemical vapour deposition technique here can be the aumospheric pressure cvd method, also can be Low Pressure Chemical Vapor Deposition.
Fig. 3 illustrates the manufacturing approach flow chart according to another aspect transparency conducting layer of the present invention.
With reference to Fig. 3, in the present embodiment, the manufacturing approach of transparency conducting layer may further comprise the steps:
At first, a substrate is provided.This substrate can be glass substrate, also can be soft transparency carrier, but not as limit.
Secondly, form an amorphous silicon layer on substrate.On substrate, form an amorphous silicon layer.
Then, graphical amorphous silicon layer becomes waffle-like pattern.Utilize aumospheric pressure cvd method or Low Pressure Chemical Vapor Deposition on metal level, to deposit one deck amorphous silicon layer.
Once more, substrate is carried out metal replacement.Utilize metal substrate to be replaced through redox reaction.Metal can be copper or nickel.
At last, the growth graphene layer is on substrate.Through one deck graphene layer at least of growing up on the substrate of displacement.
Adopt advantage of the present invention to have: through the graphene layer of on metal, growing up, to utilize metal to increase the conductivity of transparency conducting layer, and network-like, increase the penetrance of transparency conducting layer through graphene layer is patterned into.
In the preceding text, illustrate and describe embodiment of the present invention.But those skilled in the art can understand, and under situation without departing from the spirit and scope of the present invention, can also specific embodiments of the invention do various changes and replacement.These changes and replacement all drop in claims of the present invention institute restricted portion.
Claims (9)
1. the manufacturing approach of a transparency conducting layer is characterized in that, comprising:
Form a metal level;
Deposit at least one deck graphene layer on said metal level;
The said graphene layer of etching forms waffle-like pattern;
One substrate is provided; And
Shift said graphene layer on said substrate.
2. manufacturing approach as claimed in claim 1 is characterized in that, said metal level is copper metal layer or nickel metal layer.
3. manufacturing approach as claimed in claim 1 is characterized in that, on said metal level, forms graphene layer through low-pressure chemical vapor deposition or aumospheric pressure cvd method.
4. manufacturing approach as claimed in claim 1 is characterized in that, the method through little shadow etching or laser ablation forms said waffle-like pattern.
5. the manufacturing approach of a transparency conducting layer is characterized in that, comprising:
One substrate is provided;
The spray metal layer is on said substrate, and said metal level has waffle-like pattern; And
The growth graphene layer is on said substrate.
6. manufacturing approach as claimed in claim 5 is characterized in that, said metal level is copper metal layer or nickel metal layer.
7. drying equipment as claimed in claim 5 is characterized in that, adopts ink-jetting process to spray said metal level.
8. the manufacturing approach of a transparency conducting layer is characterized in that, comprising:
One substrate is provided;
Form an amorphous silicon layer on said substrate;
Graphical said amorphous silicon layer becomes waffle-like pattern;
Said substrate is carried out metal replacement; And
The growth graphene layer is on said substrate.
9. manufacturing approach as claimed in claim 8 is characterized in that, said metal is copper or nickel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100410755A CN102568657A (en) | 2012-02-21 | 2012-02-21 | Manufacture method of transparent conductive layer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012100410755A CN102568657A (en) | 2012-02-21 | 2012-02-21 | Manufacture method of transparent conductive layer |
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| CN102568657A true CN102568657A (en) | 2012-07-11 |
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| CN2012100410755A Pending CN102568657A (en) | 2012-02-21 | 2012-02-21 | Manufacture method of transparent conductive layer |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934135A (en) * | 2014-03-19 | 2015-09-23 | 深圳莱宝高科技股份有限公司 | Film electrode manufacturing method |
| CN106624371A (en) * | 2016-12-29 | 2017-05-10 | 无锡格菲电子薄膜科技有限公司 | Method for forming patterned graphene on target device |
| CN106816409A (en) * | 2017-03-09 | 2017-06-09 | 武汉华星光电技术有限公司 | The preparation method of the preparation method of electrode layer and flexible TFT substrate in TFT substrate |
| CN107580422A (en) * | 2017-08-25 | 2018-01-12 | 维沃移动通信有限公司 | A kind of circuit board and preparation method thereof |
| CN107765511A (en) * | 2016-08-17 | 2018-03-06 | 中国科学院上海高等研究院 | The graphic method of graphene and nano silver wire compound transparent electricity conductive film |
| CN107840325A (en) * | 2016-09-19 | 2018-03-27 | 上海和辉光电有限公司 | A kind of preparation method of graphene |
| CN109175356A (en) * | 2018-10-16 | 2019-01-11 | 中国科学院兰州化学物理研究所 | A kind of graphite-copper laminar composite and preparation method thereof |
| CN111725432A (en) * | 2020-07-14 | 2020-09-29 | 紫旸升光电科技(苏州)有限公司 | Manufacturing method of OLED anode, OLED display device and manufacturing method thereof |
-
2012
- 2012-02-21 CN CN2012100410755A patent/CN102568657A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934135A (en) * | 2014-03-19 | 2015-09-23 | 深圳莱宝高科技股份有限公司 | Film electrode manufacturing method |
| CN107765511A (en) * | 2016-08-17 | 2018-03-06 | 中国科学院上海高等研究院 | The graphic method of graphene and nano silver wire compound transparent electricity conductive film |
| CN107840325A (en) * | 2016-09-19 | 2018-03-27 | 上海和辉光电有限公司 | A kind of preparation method of graphene |
| CN107840325B (en) * | 2016-09-19 | 2019-09-17 | 上海和辉光电有限公司 | A kind of preparation method of graphene |
| CN106624371A (en) * | 2016-12-29 | 2017-05-10 | 无锡格菲电子薄膜科技有限公司 | Method for forming patterned graphene on target device |
| CN106624371B (en) * | 2016-12-29 | 2018-04-20 | 无锡格菲电子薄膜科技有限公司 | A kind of method that patterned graphene is formed on target devices |
| CN106816409A (en) * | 2017-03-09 | 2017-06-09 | 武汉华星光电技术有限公司 | The preparation method of the preparation method of electrode layer and flexible TFT substrate in TFT substrate |
| WO2018161400A1 (en) * | 2017-03-09 | 2018-09-13 | 武汉华星光电技术有限公司 | Method for manufacturing electrode layer in tft substrate and method for manufacturing flexible tft substrate |
| CN107580422A (en) * | 2017-08-25 | 2018-01-12 | 维沃移动通信有限公司 | A kind of circuit board and preparation method thereof |
| CN109175356A (en) * | 2018-10-16 | 2019-01-11 | 中国科学院兰州化学物理研究所 | A kind of graphite-copper laminar composite and preparation method thereof |
| CN111725432A (en) * | 2020-07-14 | 2020-09-29 | 紫旸升光电科技(苏州)有限公司 | Manufacturing method of OLED anode, OLED display device and manufacturing method thereof |
| CN111725432B (en) * | 2020-07-14 | 2022-12-02 | 紫旸升光电科技(苏州)有限公司 | Manufacturing method of OLED anode, OLED display device and manufacturing method thereof |
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Application publication date: 20120711 |