CN1025580C - Hgbrid integrated two-dimension surface emission laser array - Google Patents
Hgbrid integrated two-dimension surface emission laser array Download PDFInfo
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- CN1025580C CN1025580C CN 91111498 CN91111498A CN1025580C CN 1025580 C CN1025580 C CN 1025580C CN 91111498 CN91111498 CN 91111498 CN 91111498 A CN91111498 A CN 91111498A CN 1025580 C CN1025580 C CN 1025580C
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- laser array
- reflector
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- tube core
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Abstract
The present invention relates to a two-dimensional surface emitting laser device array. The laser device is formed by simultaneously welding a plurality of one-dimensional semiconductor laser device arrays and a semiconductor light reflector on a heat sink so that light which comes out of the one-dimensional arrays is emitted out in the direction which is perpendicular to the surface of the heat sink after being reflected. Because heat in the one-dimensional arrays is allowed by the comb-shaped reflectors to disperse into the heat sink directly, continuous outputting high-power semiconductor laser devices can be manufactured.
Description
The present invention is a kind of semiconductor laser
The optical output power of general stripe-geometry semiconductor laser is several milliwatts, and window bar shaped or large-optical-cavity structure can make power output bring up to more than tens milliwatts, and the integrated lock phase array of monolithic can obtain more high-output power.But, further improve power output and have any problem owing to be subjected to the restriction of one dimension lateral dimensions.Utilize two-dimensional surface emission array can reach the purpose of further raising power output.Form by resonant cavity can be divided into surface-emitting laser two classes: the vertical resonant cavity of the first; It two is horizontal resonant cavitys.The former advantage mainly is to obtain low threshold value and stable single mode operation, but its manufacture craft precision prescribed height, more complicated.Horizontal resonant-cavity surface emitting laser kind is more, mainly contains distributed Blatt reflective formula or distributed feed-back formula, utilizes the 45 inclined-plane reflective, and adopts crooked double heterojunction resonant cavity type.Above-mentioned distributed Blatt reflective formula can obtain very narrow far field light beam, but light is having very big loss through in the process of reflecting grating, and the making of two-grade grating also is very complicated.Monolithic in the past is reflective because the reflecting surface and the chamber face quality that erode away are not very high usually, causes optical loss and light field to be dispersed.The crooked syntony chamber is difficult to realize vertical light emission.Based on the characteristics of above-mentioned several surface-emitting lasers, people propose some other device architecture again.Be grooved silicon reflector mixing integrated two-dimensional face emitting semiconductor laser array (seeing Appl.Phys, Lett., Vol.53, P938,1988) wherein with the immediate prior art of the present invention.This device architecture to down and on have such several sections formation-copper heat sink, the semiconductor laser array tube core of end face outgoing, reflector.The reflector of this device is the silicon crystal sheet that has groove, and evaporation one deck gold film constitutes again.Groove becomes period profile, and the sidewall of groove and bottom angle at 45 forms mirror surface.The semiconductor laser array tube core of end face outgoing is welded in the silicon wafer reflector groove, again the silicon chip reflector is welded on copper heat sink on.There is the silicon wafer reflector to be separated by between semiconductor laser array tube core and copper are heat sink, directly do not link together.The operation principle of this structure devices is that the light of semiconductor laser array tube core end face outgoing is reflected into the light of vertical direction outgoing by mirror surface, constitutes two-dimentional surface emitting laser array.But in this mixing integrated two-dimensional array and since tube core with heat sink between have one deck silicon wafer to hinder heat radiation, so it can only be worked under the injection of burst pulse electricity.
Purpose of the present invention just is to overcome this difficulty, solves the tube core heat dissipation problem, makes it high power CW output.
The Hgbrid integrated two-dimension surface emission laser array (seeing accompanying drawing and description of drawings) that the present invention is designed, by copper heat sink 1, the semiconductor laser array tube core 2 of end face bright dipping and reflector 3 constitute, it is characterized in that the semiconductor laser array tube core 2 and directly welding mutually of copper heat sink 1 of end face bright dipping, middle other crystal that does not hinder heat radiation is isolated; Reflector 3 is the rectangular ring structure at the no end, and the inboard of rectangular window constitutes mirror surface 5, and laser array die 2 is positioned at the rectangular ring window center of reflector 3, and the light output end of laser array die 2 is facing to mirror surface 5; Reflector 3 with laser array tube core 2 once sintered be welded on simultaneously copper facing heat sink on, reflector 3 is to make with the method for directional etching.
It is good that the present invention and existing grooved silicon reflector mixing integrated two-dimensional face emitting semiconductor laser array are compared heat dissipation characteristics, therefore has high reliability, realizes continuous high-power light output easily, and preparation technology is simple simultaneously.
Description of drawings:
Figure one is for mixing the generalized section of integrated two-dimensional face emitting semiconductor laser array structure.Parts 1 are that copper is heat sink among the figure one, and 2 is the semiconductor laser array tube core of end face bright dipping, and 3 is reflector, 4 paths for the beam projecting reflection.Figure two is reflector structure and generalized section thereof.Among the figure two, 5 is mirror surface, and the upper surface of reflector is (100) face, and the direction of dotted line indication is ［ 011 ］ direction of crystal.
Embodiments of the invention are described below:
1. the preparation of reflector 3
Select to be cut easily or cleavage, and can directional etching go out the suitable crystal on parabola or approximate 45 inclined-plane, as silicon wafer, gallium arsenide single-crystal wafer, indium phosphide single crystal wafer etc.We select gallium arsenide wafer for use, it is thick that gallium arsenide wafer is thinned to about 100 μ m along the cutting of (100) face, wafer is bonded on the sheet glass with paraffin, make wide 400 μ m with photoresist by lithography along [011] direction, the rectangular window of long 2mm, according to the dimension of required array what also can be with this rectangular window periodic arrangement again, the cycle is 600 μ m.Use H then
2SO
4: H
2O
2: H
2O(1: 8: 8) directional etching, the crystal in window are corroded and reveal out till the sheet glass, so just crystal wafer have been made the circulus of rectangular window of the no end, or the pectinate texture tied mutually of several circulus.The selective corrosion effect of this corrosive liquid makes the sidewall directional etching of gallium arsenide wafer window become approximate 45 inclined-plane or parabola to form mirror surface 5.The wafer that corrosion is good takes off the two-sided steaming gold in back from sheet glass.
2. the preparation of two-dimentional surface-emitting laser array
With the reflector 3 for preparing, the semiconductor laser array tube core 2 of end face bright dipping be placed in simultaneously the plating indium copper heat sink on, wherein array tube core 2 to be placed in the rectangular window of reflector 3, the light output end of array tube core 2 will face toward mirror surface 5.Heat-agglomerating has in a vacuum so just been freezed array tube core 2 and reflector 3 on copper heat sink 1 simultaneously, carries out contact conductor again, just has been prepared into Hgbrid integrated two-dimension surface emission laser array.Laser will promptly be called surface emitting along the path 4 vertical outgoing of beam projecting reflection.
Claims (5)
1, a kind of Hgbrid integrated two-dimension surface emission laser array, by copper heat sink 1, the semiconductor laser array tube core 2 of end face bright dipping and reflector 3 constitute, and the invention is characterized in the semiconductor laser array tube core 2 and directly welding mutually of copper heat sink 1 of end face bright dipping, and the centre does not have other crystal to isolate.
2, a kind of according to the described Hgbrid integrated two-dimension surface emission laser array of claim 1, it is characterized in that reflector 3 is the rectangular window circulus at the no end, the inboard of rectangular window constitutes mirror surface 5, laser array tube core 2 is positioned at the rectangular window center of reflector 3, and the light output end of laser array tube core 2 is facing to mirror surface 5.
3, a kind of according to the described Hgbrid integrated two-dimension surface emission laser array of claim 2, it is characterized in that reflector 3 makes thick about 100 μ m by the surface for the gallium arsenide single-crystal wafer of (100) face.
4, a kind of process of Hgbrid integrated two-dimension surface emission laser array, for being integrated on the copper heat sink 1, the semiconductor laser array tube core 2 with reflector 3 and end face bright dipping to use sintering process, reflector will be used etching process, the invention is characterized in that the method for reflector 3 usefulness directional etchings is made on the soldered plating indium copper heat sink 1 of once sintered together while of semiconductor laser array tube core 2 of reflector 3 and end face bright dipping.
5,, the invention is characterized in the preparation directional etching liquid H of reflector 3 according to the process of the described Hgbrid integrated two-dimension surface emission laser array of claim 4
2SO
4: H
2O
2: H
2O(1: 8: 8), corrode along the rectangular window of GaAs single-chip [011] direction photoetching, the sidewall of window is approximated to 45 inclined-plane or parabola.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91111498 CN1025580C (en) | 1991-12-05 | 1991-12-05 | Hgbrid integrated two-dimension surface emission laser array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91111498 CN1025580C (en) | 1991-12-05 | 1991-12-05 | Hgbrid integrated two-dimension surface emission laser array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1071034A CN1071034A (en) | 1993-04-14 |
| CN1025580C true CN1025580C (en) | 1994-08-03 |
Family
ID=4910677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 91111498 Expired - Fee Related CN1025580C (en) | 1991-12-05 | 1991-12-05 | Hgbrid integrated two-dimension surface emission laser array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1025580C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019062055A1 (en) * | 2017-09-26 | 2019-04-04 | 青岛海信激光显示股份有限公司 | Laser array, laser light source, and laser projector |
-
1991
- 1991-12-05 CN CN 91111498 patent/CN1025580C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1071034A (en) | 1993-04-14 |
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