CN102557630A - Doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material - Google Patents

Doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material Download PDF

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Publication number
CN102557630A
CN102557630A CN2010105888158A CN201010588815A CN102557630A CN 102557630 A CN102557630 A CN 102557630A CN 2010105888158 A CN2010105888158 A CN 2010105888158A CN 201010588815 A CN201010588815 A CN 201010588815A CN 102557630 A CN102557630 A CN 102557630A
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China
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loss
dielectric constant
voltage capacitor
ti2zr
ceramic material
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CN2010105888158A
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颜欢
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Abstract

The invention discloses a doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material. The material comprises BaTiO3, BaZrO3, CaZrO3, and MgTiO3, etc. as the main raw materials, and comprises Nb2O5, ZnO, CeO2, MnO2, Yb2O3, etc. as the main doped materials. The material has the dielectric constant of 14000, the medium loss tan delta of no larger than 0.002, the dielectric strength Eb of no less than 10 kV/mm, and the temperature characteristic of Y5V.

Description

The high Jie's low-loss of a kind of doping Ba (Ti 2Zr) O 3Base high voltage capacitor stupalith
Technical field
The present invention relates to a kind of capacitor material, the high Jie's low-loss of especially a kind of doping Ba (Ti 2Zr) O 3Base high voltage capacitor stupalith.
Background technology
In the overstable type high-pressure porcelain capacitor material that widespread production is used at present, can not satisfy the requirement of compensation PTC in oscillator circuit.
And the specific inductivity of the overstable type ceramic capacitor material of general prescription is less simultaneously, can not satisfy the demand of electronic circuit miniaturized, and loss value is excessive.
Summary of the invention
The invention provides the high Jie's low-loss of a kind of doping Ba (Ti 2Zr) O 3Base high voltage capacitor stupalith.
Technical scheme is following:
The high Jie's low-loss of a kind of doping Ba (Ti 2Zr) O 3Base high voltage capacitor stupalith
Main raw material: BaTiO 3, BaZrO 3, CaZrO 3, MgTiO 3Deng
Main doped raw material: Nb 2O 5, ZnO, CeO 2, MnO 2, Yb 2O 3Deng
Principal character: specific inductivity 14000 dielectric loss tan δ≤0.002 compressive strength Eb>=10Kv/mm, temperature profile are Y5V.
Embodiment
The high Jie's low-loss of a kind of doping Ba (Ti 2Zr) O 3Base high voltage capacitor stupalith
Main raw material: BaTiO 3, BaZrO 3, CaZrO 3, MgTiO 3Deng
Main doped raw material: Nb 2O 5, ZnO, CeO 2, MnO 2, Yb 2O 3Deng
Principal character: specific inductivity 14000 dielectric loss tan δ≤0.002 compressive strength Eb>=10Kv/mm, temperature profile are Y5V.

Claims (1)

1. high Jie's low-loss Ba (Ti that mixes 2Zr) O 3Base high voltage capacitor stupalith is characterized in that specific inductivity 14000 dielectric loss tan δ≤0.002 compressive strength Eb>=10Kv/mm, temperature profile are Y5V.
CN2010105888158A 2010-12-15 2010-12-15 Doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material Pending CN102557630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010105888158A CN102557630A (en) 2010-12-15 2010-12-15 Doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010105888158A CN102557630A (en) 2010-12-15 2010-12-15 Doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material

Publications (1)

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CN102557630A true CN102557630A (en) 2012-07-11

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CN2010105888158A Pending CN102557630A (en) 2010-12-15 2010-12-15 Doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102924078A (en) * 2012-10-22 2013-02-13 天津大学 BCTZ-based perovskite system multi-component lead-free piezoelectric ceramic and preparation method thereof
CN114409402A (en) * 2022-02-24 2022-04-29 江苏科技大学 Capacitor dielectric porcelain and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102924078A (en) * 2012-10-22 2013-02-13 天津大学 BCTZ-based perovskite system multi-component lead-free piezoelectric ceramic and preparation method thereof
CN114409402A (en) * 2022-02-24 2022-04-29 江苏科技大学 Capacitor dielectric porcelain and preparation method thereof
CN114409402B (en) * 2022-02-24 2022-10-14 江苏科技大学 Capacitor dielectric porcelain and preparation method thereof

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Application publication date: 20120711