CN102557630A - Doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material - Google Patents
Doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material Download PDFInfo
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- CN102557630A CN102557630A CN2010105888158A CN201010588815A CN102557630A CN 102557630 A CN102557630 A CN 102557630A CN 2010105888158 A CN2010105888158 A CN 2010105888158A CN 201010588815 A CN201010588815 A CN 201010588815A CN 102557630 A CN102557630 A CN 102557630A
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- loss
- dielectric constant
- voltage capacitor
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Abstract
The invention discloses a doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material. The material comprises BaTiO3, BaZrO3, CaZrO3, and MgTiO3, etc. as the main raw materials, and comprises Nb2O5, ZnO, CeO2, MnO2, Yb2O3, etc. as the main doped materials. The material has the dielectric constant of 14000, the medium loss tan delta of no larger than 0.002, the dielectric strength Eb of no less than 10 kV/mm, and the temperature characteristic of Y5V.
Description
Technical field
The present invention relates to a kind of capacitor material, the high Jie's low-loss of especially a kind of doping Ba (Ti
2Zr) O
3Base high voltage capacitor stupalith.
Background technology
In the overstable type high-pressure porcelain capacitor material that widespread production is used at present, can not satisfy the requirement of compensation PTC in oscillator circuit.
And the specific inductivity of the overstable type ceramic capacitor material of general prescription is less simultaneously, can not satisfy the demand of electronic circuit miniaturized, and loss value is excessive.
Summary of the invention
The invention provides the high Jie's low-loss of a kind of doping Ba (Ti
2Zr) O
3Base high voltage capacitor stupalith.
Technical scheme is following:
The high Jie's low-loss of a kind of doping Ba (Ti
2Zr) O
3Base high voltage capacitor stupalith
Main raw material: BaTiO
3, BaZrO
3, CaZrO
3, MgTiO
3Deng
Main doped raw material: Nb
2O
5, ZnO, CeO
2, MnO
2, Yb
2O
3Deng
Principal character: specific inductivity 14000 dielectric loss tan δ≤0.002 compressive strength Eb>=10Kv/mm, temperature profile are Y5V.
Embodiment
The high Jie's low-loss of a kind of doping Ba (Ti
2Zr) O
3Base high voltage capacitor stupalith
Main raw material: BaTiO
3, BaZrO
3, CaZrO
3, MgTiO
3Deng
Main doped raw material: Nb
2O
5, ZnO, CeO
2, MnO
2, Yb
2O
3Deng
Principal character: specific inductivity 14000 dielectric loss tan δ≤0.002 compressive strength Eb>=10Kv/mm, temperature profile are Y5V.
Claims (1)
1. high Jie's low-loss Ba (Ti that mixes
2Zr) O
3Base high voltage capacitor stupalith is characterized in that specific inductivity 14000 dielectric loss tan δ≤0.002 compressive strength Eb>=10Kv/mm, temperature profile are Y5V.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010105888158A CN102557630A (en) | 2010-12-15 | 2010-12-15 | Doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010105888158A CN102557630A (en) | 2010-12-15 | 2010-12-15 | Doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102557630A true CN102557630A (en) | 2012-07-11 |
Family
ID=46404419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2010105888158A Pending CN102557630A (en) | 2010-12-15 | 2010-12-15 | Doped high-dielectric constant low-loss Ba(Ti2Zr)O3 based high-voltage capacitor ceramic material |
Country Status (1)
Country | Link |
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CN (1) | CN102557630A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102924078A (en) * | 2012-10-22 | 2013-02-13 | 天津大学 | BCTZ-based perovskite system multi-component lead-free piezoelectric ceramic and preparation method thereof |
CN114409402A (en) * | 2022-02-24 | 2022-04-29 | 江苏科技大学 | Capacitor dielectric porcelain and preparation method thereof |
-
2010
- 2010-12-15 CN CN2010105888158A patent/CN102557630A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102924078A (en) * | 2012-10-22 | 2013-02-13 | 天津大学 | BCTZ-based perovskite system multi-component lead-free piezoelectric ceramic and preparation method thereof |
CN114409402A (en) * | 2022-02-24 | 2022-04-29 | 江苏科技大学 | Capacitor dielectric porcelain and preparation method thereof |
CN114409402B (en) * | 2022-02-24 | 2022-10-14 | 江苏科技大学 | Capacitor dielectric porcelain and preparation method thereof |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120711 |