CN102544361A - Phase-change material for phase-change memory and method for adjusting phase-change parameter of phase-change material - Google Patents
Phase-change material for phase-change memory and method for adjusting phase-change parameter of phase-change material Download PDFInfo
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- CN102544361A CN102544361A CN2010106194619A CN201010619461A CN102544361A CN 102544361 A CN102544361 A CN 102544361A CN 2010106194619 A CN2010106194619 A CN 2010106194619A CN 201010619461 A CN201010619461 A CN 201010619461A CN 102544361 A CN102544361 A CN 102544361A
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Abstract
The invention discloses a phase-change material for phase-change memory and a method for adjusting phase-change parameters of the phase-change material. The phase-change material is a memory material made of tin, antimony and tellurium. In the memory material, the atomic percentage content of the tin is 0.1-90 percent and the atomic percentage content of the tellurium is 0.1-90 percent; and the phase-change material SnxSbTey is doped and the atomic percentage content of the doping agent is 0-90 percent. Under the effect of external energy, the phase-change material can be reversibly changed. In the phase-change memory, the low-impedance state of the phase-change memory corresponds to the crystallization of all or partial phase-change material, and the low-impedance state of the phase-change memory corresponds to the amorphous state of the phase-change material. The phase-change material for the phase-change memory provided by the invention has repetitive phase-change capability.
Description
Technical field
The invention belongs to the photoelectron technology field, relate to a kind of phase-change material, relate in particular to a kind of phase-change material that is used for phase change memory; Simultaneously, the invention still further relates to a kind of method of regulating above-mentioned phase-change material phase transition parameter.
Background technology
Phase transition storage (PC-RAM, Phase Change-Random Access Memory) technology is based on S.R.Ovshinsky in late 1960s (Phys.Rev.Lett., 21; 1450～1453; 1968) beginning of the seventies (Appl.Phys.Lett., 18,254～257; 1971) phase-change thin film that proposes can be applied to that the structure of phase change memory medium gets up; Be the memory device of a kind of low price, stable performance, the PC-RAM memory can be made on the silicon wafer substrate, but its critical material is the phase-change thin film of recorded information.
The key features of phase-change alloy material is when giving his electric pulse, can make material between amorphous state and polycrystalline attitude, reversible transition take place.Present high resistant when being in amorphous state, present low-resistance during the polycrystalline attitude, amplitude of variation can reach several orders of magnitude, so just can be used as a phase transition storage.
Though utilizing the PC-RAM memory of phase-change thin film resistive performance releases in period early; But because the restriction of technology of preparing and technology; Phase-change material at that time can only just can undergo phase transition under stronger electric field, and this has just limited the process of its practicability development.Development along with nanometer technology of preparing and technology; The size of material in the device (comprising the two-dimension sizes in film thickness direction and the plane) can narrow down to nanometer scale; Make material undergo phase transition that required voltage reduces greatly, power consumption reduces, huge variation has also taken place in the performance of material simultaneously.1999, (Energy Conversion Devices INC) realized the phase transition process of phase-change thin film under low-voltage very in ECD company; Good electrical property is arranged after the phase transformation; Be specially adapted to make memory (SPIE, 3891,2～9; 1999). from then on, the PC-RAM memory has obtained development faster.
Companies such as Ovonyx, Intel, Samsung, Hitachi, STMicroelectronics and BritishAerospace are arranged in the world in the research of carrying out the PC-RAM memory, carrying out the research and development worker that the moulding aspect was improved and restrained to technology at present.
The PC-RAM memory reads owing to having at a high speed, high cycle-index; Non-volatile; Component size is little; Advantages such as strong motion low in energy consumption, anti-and anti-irradiation are thought that by international semiconductor TIA the present flash memories two of most possible replacement becomes following memory main product and becomes the device of commercial product at first.
Summary of the invention
Technical problem to be solved by this invention is: a kind of phase-change material that can be used for phase change memory is provided, has higher crystallization temperature and reversible transition ability preferably.
In addition, the present invention further provides a kind of method of regulating above-mentioned phase-change material phase transition parameter, can accurately regulate the crystallization temperature and the fusing point of material.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of phase-change material that can be used for phase change memory, said phase-change material are the storage medium of tin, antimony, three kinds of elements compositions of tellurium.
As a kind of preferred version of the present invention, in the said storage medium, the atom percentage content of tin is 0.1-90%.
As a kind of preferred version of the present invention, in the said storage medium, the atom percentage content of tellurium is 0.1-90%.
As a kind of preferred version of the present invention, further phase-change material SnxSbTey is mixed, the dopant dose atomic percentage conc is between 0-90%;
Doped chemical is a kind of in germanium, selenium, phosphorus, sulphur, gold, silver, indium, titanium, tungsten, aluminium, tin, bismuth, gallium, boron, oxygen, nitrogen, hydrogen or the rare earth element, or is the mixing and doping of above-mentioned several kinds of elements.
As a kind of preferred version of the present invention, said phase-change material externally has reversible variation under the energy.
As a kind of preferred version of the present invention, the reversible transition of said phase-change material between different conditions drives through electricity driving, laser pulse or electron beam drives realization.
As a kind of preferred version of the present invention, in phase change memory, all or part of crystallization of the corresponding said phase-change material of the low resistance state of phase transition storage, the amorphous state of the corresponding said phase-change material of the high-impedance state of phase transition storage.
As a kind of preferred version of the present invention, the intensity of pulse voltage is 0.001-20V, and corresponding pulse duration is 0.001-1000ns.
A kind of method of regulating above-mentioned phase-change material crystallization temperature and fusing point through the content of each element in the control phase-change material, is accurately regulated crystallization temperature, fusing point and the phase velocity of material.
Beneficial effect of the present invention is: the phase-change material that can be used for phase change memory that the present invention proposes has the ability of phase transformation repeatedly.
GeSbTe has the state of high resistant and two kinds of different resistances of low-resistance, but and can realize inverse conversion through applying pulse electrical signal between high-impedance state and the low resistance state, satisfy the basic demand of phase transition storage storage medium, be a kind of novel storage medium.
Sn and Ge belong to the element of same main group, have identical outermost electron number.Sn replaces Ge, and the SnSbTe material is had than GeSbTe material phase velocity faster, but has reduced the crystallization temperature of phase-change material, causes the thermal stability of SnSbTe phase-change material to descend.Through the SnSbTe material is carried out the doping of other one or more elements, can accurately regulate crystallization temperature, fusing point, the phase velocity of material, make material in suitable element ratio range, have suitable phase-change characteristic.
Can adopt pulse voltage or pulse laser to drive phase-change material and between the various structure state, reversible transition take place, make the performance of phase-change material that reversible variation takes place simultaneously, thereby realize the information stores of phase transition storage.
Description of drawings
Fig. 1 is with Sn
1Sb
4Te
7For the phase transition storage of storage medium 300 nanosecond width the potential pulse operation under resistance with the change curve of voltage.
Fig. 2 is the phase-change memory cell structure sketch map based on Ge1.7SnTe base storage medium.
Embodiment
Specify the preferred embodiments of the present invention below in conjunction with accompanying drawing.
Embodiment one
The present invention discloses a kind of phase-change material that can be used for phase change memory, and said phase-change material is the storage medium of tin, antimony, three kinds of elements compositions of tellurium.In the said storage medium, the atom percentage content of tin is 0.1-90% (as 0.1%, 1%, 10%, 25%, 40%, 60%, 90% or the like); The atom percentage content of tellurium is 0.1-90% (as 0.1%, 1%, 10%, 25%, 40%, 60%, 90% or the like).
Preferably, further phase-change material SnxSbTey is mixed, the dopant dose atomic percentage conc is between 0-90%.Doped chemical is a kind of in germanium, selenium, phosphorus, sulphur, gold, silver, indium, titanium, tungsten, aluminium, tin, bismuth, gallium, boron, oxygen, nitrogen, hydrogen or the rare earth element, or is the mixing and doping of above-mentioned several kinds of elements.
Said phase-change material externally has reversible variation under the energy, and the reversible transition of said phase-change material between different conditions drives through electricity driving, laser pulse or electron beam drives realization.The intensity of pulse voltage is 0.001-20V, and corresponding pulse duration is 0.001-1000ns.In phase change memory, all or part of crystallization of the corresponding said phase-change material of the low resistance state of phase transition storage, the amorphous state of the corresponding said phase-change material of the high-impedance state of phase transition storage.
The electric property of phase-change material can in very large range change; The change of phase change material structure state will be accompanied by the variation of electric property; Its amplitude of variation can reach a plurality of orders of magnitude; But potential pulse can make potential pulse can make phase-change material inverse conversion between the various structure state, utilizes the change of electric property between different conditions can realize the information stores of phase transition storage.
Through control SnxSbTey in each element content or regulate the atomic percent of other doped chemicals, can accurately regulate crystallization temperature, fusing point and the phase velocity of material.In a suitable atom ratio range, this material has higher crystallization temperature and reversible transition ability preferably, has preferable performance based on the memory of this material.
The same with the GeSbTe phase-change material, the SnSbTe phase-change material has the ability of phase transformation repeatedly.Sn and Ge belong to the element of same main group, have identical outermost electron number.Sn replaces Ge can make the SnSbTe material have than GeSbTe material phase velocity faster, but has reduced the crystallization temperature of phase-change material, causes the thermal stability of SnSbTe phase-change material to descend.Through the SnSbTe material is carried out the doping of other one or more elements, can accurately regulate crystallization temperature, fusing point, the phase velocity of material, make material in suitable element ratio range, have suitable phase-change characteristic.
Embodiment two
In the present embodiment, phase-change material of the present invention is Sn
1Sb
4Te
7
In order to test Sn
1Sb
4Te
7The base storage medium gets electric property, adopts phase-change memory storage unit structure as shown in Figure 2.
Storage medium wherein adopts Sn
1Sb
4Te
7Thin-film material, memory cell adopt 0.18 micron standard semiconductor processing line to accomplish, and the size of each rete is following: bottom electrode is AI, and thickness is 300 nanometers; Insulation material layer on the bottom electrode is SI02, and its thickness is 700 nanometers; Open column shape electrode in the heat-insulating material SiO2 layer is W, and its external diameter is that 260 nanometers, internal diameter are 100 nanometers; Insulation material layer on the open column shape electrode is SiO2., its thickness is 200 nanometers; Sn
1Sb
4Te
7The thickness of storage medium is 150 nanometers; Sn
1Sb
4Te
7Buffer layer material on the storage medium is TiN, and its thickness is 20 nanometers.
The memory cell of above-mentioned structure is carried out pulse voltage operation, let two probes contact with upper/lower electrode respectively, and the voltage pulse signal that the amplitude that applies increases gradually measures the pairing resistance of memory cell, the result who obtains is as shown in Figure 1.
Can know by figure based on Sn
1Sb
4Te
7The phase-change memory storage unit of storage medium with 300 nanosecond width potential pulse read and write required voltage.As can be seen from the figure Sn
1Sb
4Te
7The switching characteristic of film is obvious.Potential pulse with 0.7 volt of 300 nanosecond can become low resistance state (resistance is about 104 ohm) from initial high-impedance state (being about 107 ohm) with material, and resistance has the variation of 2-3 one magnitude approximately before and after the phase transformation.Potential pulse with 1.7 volt of 300 nanosecond can become high-impedance state (being about 107 ohm) from low resistance state (resistance is about 104 ohm) with material, proves Sn
1Sb
4Te
7Material has the ability of phase transformation repeatedly.
Can draw thus as drawing a conclusion: Sn
1Sb
4Te
7Material has the state of high resistant and two kinds of different resistances of low-resistance, but and can realize inverse conversion through applying pulse electrical signal between high-impedance state and the low resistance state, satisfy the basic demand of phase transition storage storage medium, be a kind of novel storage medium.
In sum, the phase-change material that can be used for phase change memory that the present invention proposes has the ability of phase transformation repeatedly.
GeSbTe has the state of high resistant and two kinds of different resistances of low-resistance, but and can realize inverse conversion through applying pulse electrical signal between high-impedance state and the low resistance state, satisfy the basic demand of phase transition storage storage medium, be a kind of novel storage medium.
Sn and Ge belong to the element of same main group, have identical outermost electron number.Sn replaces Ge, and the SnSbTe material is had than GeSbTe material phase velocity faster, but has reduced the crystallization temperature of phase-change material, causes the thermal stability of SnSbTe phase-change material to descend.Through the SnSbTe material is carried out the doping of other one or more elements, can accurately regulate crystallization temperature, fusing point, the phase velocity of material, make material in suitable element ratio range, have suitable phase-change characteristic.
Can adopt pulse voltage or pulse laser to drive phase-change material and between the various structure state, reversible transition take place, make the performance of phase-change material that reversible variation takes place simultaneously, thereby realize the information stores of phase transition storage.
Here description of the invention and application is illustrative, is not to want with scope restriction of the present invention in the above-described embodiments.Here the distortion of the embodiment that is disclosed and change are possible, and the replacement of embodiment is known with the various parts of equivalence for those those of ordinary skill in the art.Those skilled in the art are noted that under the situation that does not break away from spirit of the present invention or substantive characteristics, and the present invention can be with other form, structure, layout, ratio, and realize with other assembly, material and parts.Under the situation that does not break away from the scope of the invention and spirit, can carry out other distortion and change here to the embodiment that is disclosed.
Claims (10)
1. a phase-change material that can be used for phase change memory is characterized in that, said phase-change material is the storage medium of tin, antimony, three kinds of elements compositions of tellurium.
2. the phase-change material that can be used for phase change memory according to claim 1 is characterized in that:
In the said storage medium, the atom percentage content of tin is 0.1-90%.
3. the phase-change material that can be used for phase change memory according to claim 1 is characterized in that:
In the said storage medium, the atom percentage content of tellurium is 0.1-90%.
4. the phase-change material that can be used for phase change memory according to claim 1 is characterized in that: further to phase-change material Sn
xSbTe
yMix, the dopant dose atomic percentage conc is between 0-90%;
Doped chemical is a kind of in germanium, selenium, phosphorus, sulphur, gold, silver, indium, titanium, tungsten, aluminium, tin, bismuth, gallium, boron, oxygen, nitrogen, hydrogen or the rare earth element, or is the mixing and doping of above-mentioned several kinds of elements.
5. according to the described phase-change material that can be used for phase change memory of one of claim 1 to 4, it is characterized in that:
Said phase-change material externally has reversible variation under the energy.
6. the phase-change material that can be used for phase change memory according to claim 5 is characterized in that:
The reversible transition of said phase-change material between different conditions drives through electricity driving, laser pulse or electron beam drives realization.
7. the phase-change material that can be used for phase change memory according to claim 5 is characterized in that:
In phase change memory, all or part of crystallization of the corresponding said phase-change material of the low resistance state of phase transition storage, the amorphous state of the corresponding said phase-change material of the high-impedance state of phase transition storage.
8. the phase-change material that can be used for phase change memory according to claim 5 is characterized in that:
The intensity of pulse voltage is 0.001-20V, and corresponding pulse duration is 0.001-1000ns.
9. a phase-change material that can be used for phase change memory is characterized in that, said phase-change material comprises tin, antimony, three kinds of elements of tellurium;
Further to phase-change material Sn
xSbTe
yMix, the dopant dose atomic percentage conc is between 0-90%;
Doped chemical is a kind of in germanium, selenium, phosphorus, sulphur, gold, silver, indium, titanium, tungsten, aluminium, tin, bismuth, gallium, boron, oxygen, nitrogen, hydrogen or the rare earth element, or is the mixing and doping of above-mentioned several kinds of elements.
10. a method of regulating said phase-change material crystallization temperature of one of claim 1 to 9 and fusing point is characterized in that, through the content of each element in the control phase-change material, accurately regulates crystallization temperature, fusing point and the phase velocity of material.
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| CN104485417A (en) * | 2014-12-16 | 2015-04-01 | 曲阜师范大学 | Technology for improving GeSbTe phase change property and thin film preparation method thereof |
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Application publication date: 20120704 |