CN102540462A - Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics - Google Patents
Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics Download PDFInfo
- Publication number
- CN102540462A CN102540462A CN201210037321XA CN201210037321A CN102540462A CN 102540462 A CN102540462 A CN 102540462A CN 201210037321X A CN201210037321X A CN 201210037321XA CN 201210037321 A CN201210037321 A CN 201210037321A CN 102540462 A CN102540462 A CN 102540462A
- Authority
- CN
- China
- Prior art keywords
- transmissivity
- metal
- cermet films
- doping
- inductive capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics. The method comprises the following steps of: selecting refractive indexes and dissipation coefficients of a dielectric material and a doped metal material, and calculating dielectric constants of the dielectric material and the doped metal material; calculating a dielectric constant, a refractive index and a dissipation coefficient of a metal ceramic film; calculating the transmissivity and the absorption coefficient of the metal ceramic film; and comparing a transmissivity or absorption coefficient design value required by the metal ceramic film with the calculated transmissivity or absorption coefficient, and if results are not consistent, modifying a value of a metal doping amount for repeated calculation until the results are consistent, wherein the metal doping amount when the results are consistent is the required final doping amount. The method has the characteristics of accuracy, scientificalness and high efficiency, and can comprehensively disclose a change rule of the metal ceramic film photoelectric characteristics with doped metals, doping amount, incident light wavelength and other parameters.
Description
Technical field
The present invention relates to metallic cermet films material (being metal oxide materials), refer in particular to a kind of method for designing that is used for the metallic cermet films photoelectric characteristic.
Background technology
Along with little/receive/development of photoelectron technology, membraneous material is widely used in fields such as laser instrument, solar cell, detector, sensor, FPD.Therefore, the character of membraneous material has determined the character of membrane element device.Great deal of research results shows: have the not available photoelectronic property of homogenous material by two kinds of materials and above composite material mixed.Metallic cermet films is the laminated film that is made up of metal and stupalith (dielectric material); Be widely used in aspects such as optical device, information stores and solar cell because of it has good optical characteristics, and the specific inductive capacity of doping metals, refractive index and dissipation coefficient etc. there is material impact to the photoelectronic property of dielectric material.
Maxwell-Garnett (you can well imagine out in 1904 and 1906 the fraction of the year by Maxwell and Garnett, becomes the Maxwell-Garnett theory afterwards, and it is theoretical to be called for short MG by the theory of Maxwell-Ge Neite).This theory thinks that the metal particle of minute quantity is scattered in the dielectric matrix, and the distance between the particulate is bigger, does not have between the particulate to interact each self-scattering; Particulate is by the instantaneous field induced polarization, and the outfield can be revised by Lorentz (Lorentz) local fields.The MG theory can be used for finding the solution the characteristics such as specific inductive capacity of metallic ceramics disperse microstructure.
The main preparation methods of current metallic cermet films has vacuum vapor deposition method, vacuum sputtering, ion plating method, chemical vapor deposition method and sol-gal process etc.But, because metallic cermet films incompatibility of materials and specific component requirement, need be well-designed, careful operation is so the design of metallic cermet films and manufacturing process are comparatively loaded down with trivial details.
Summary of the invention
The purpose of this invention is to provide a kind of metallic cermet films photoelectric characteristic method for designing based on the Maxwell-Garnett theory that can improve metallic cermet films photoelectric characteristic accuracy of designs and efficient, shorten the R&D cycle of new product and reduce cost.
The technical scheme that the present invention adopts is in turn include the following steps:
(1) selective refraction rate
, the dissipation coefficient
Dielectric material and selective refraction rate
,The dissipation coefficient
The doping metals material, calculate the specific inductive capacity of dielectric material
Specific inductive capacity with the doping metals material
iBe imaginary unit;
(2) calculate the specific inductive capacity
of metallic cermet films according to formula
;
is metal-doped amount, and initial doping is 0;
(3) calculate the refractive index
and the dissipation coefficient
of metallic cermet films according to formula
,
;
is the real part of specific inductive capacity
,
be the imaginary part of specific inductive capacity
;
(4) calculate the transmissivity
and the absorption coefficient
of metallic cermet films according to formula
and
; Air refraction
,
are the incident light wavelength;
(5) transmissivity of required metallic cermet films transmissivity or absorption coefficient design load and said transmissivity
or absorption coefficient
are compared; If the result is inconsistent; The value of the metal-doped amount in the modify steps (2)
then; Repeated execution of steps (3) and step (4) then, the metal-doped amount
till unanimity as a result is the final doping of asking.
The invention has the beneficial effects as follows:
1, the present invention is directed to the film system design of metallic cermet films; Based on Maxwell-Garnett (MG) theory; Calculate the photoelectric characteristic of metallic cermet films; Select suitable doping metals and proportioning to prepare according to designing requirement then, or can confirm the optical constant of suitable dopant material, and select suitable metal material to prepare according to doping and dielectric material.This method for designing in the film photoelectric characteristics design, have calculate accurately, science, characteristics that efficient is high; Can disclose the membraneous material photoelectric characteristic all sidedly with the isoparametric Changing Pattern of doping metals, doping and lambda1-wavelength; This method can improve metallic cermet films photoelectric characteristic design accuracy and efficient; Can further reduce the research and development preparation cost of cermet film, for designing and developing of novel photoelectric material provides the basis.
2, in order to overcome the loaded down with trivial details property problem that manufactures and designs, the present invention can adopt Computer-aided Design Technology, with computer simulation calculating optimum proportioning and specificity analysis, improves the design efficiency of membraneous material, reduces preparation cost.
Description of drawings
Fig. 1 is based on the theoretical metallic cermet films designing and calculating process flow diagram of MG;
Fig. 2 based on the theoretical metallic cermet films specific inductive capacity of MG with doping
qChange curve;
Fig. 3 is based on the theoretical metallic cermet films optical constant of MG
nWith doping
qChange curve;
Fig. 4 is based on the theoretical metallic cermet films optical constant of MG
kWith doping
qChange curve;
Fig. 5 based on the transmissivity T of the theoretical metallic cermet films of MG with doping
qChange curve;
Fig. 6 based on the theoretical metallic cermet films transmissivity T of MG with the doping metals refractive index
nChange curve;
Fig. 7 based on the theoretical metallic cermet films transmissivity T of MG with the doping metals coefficient that dissipates
kChange curve.
Embodiment
Can know that according to the Maxwell theory specific inductive capacity of non-magnetic material and the relation between the optical constant are:
Wherein,
,
Be respectively the real part (Real part) and the imaginary part (Imaginary part) of metallic cermet films effective dielectric constant;
,
Be respectively the refractive index and the dissipation coefficient of material, it closes the optical constant that is called material;
iExpression imaginary unit.
According to MG disperse micro-structure theory, the specific inductive capacity of metal-ceramic composite film
can be expressed as by the specific inductive capacity of medium (pottery) material and doping metals material:
In the formula;
is the doping of doping metals particle;
is the specific inductive capacity of dielectric material, and
is the specific inductive capacity of doping metals material;
By the formula (1) shows the refractive index
and dissipation factor
cermet material on the real and imaginary part of the dielectric constant of the relationship between:
Most of photoelectric characteristics of material (as: transmissivity, absorption coefficient etc.) all optical constant with material itself have relation, and when air was injected material, according to the refraction law of light, the transmissivity of material and absorption coefficient can be expressed as:
（5）
Wherein, Wherein, The refractive index of air
,
is the incident light wavelength;
Therefore, at first according to the refractive index of ceramic medium material and doping metals material and these two optical constants of dissipation coefficient (n, k) respectively by formula (1) obtain the specific inductive capacity of these two kinds of materials; Obtain the effective dielectric constant of metallic cermet films then according to formula (2); And then obtain most of photoelectric characteristics that substantial connection is arranged with the specific inductive capacity of metallic cermet films; As: transmissivity, refractive index and absorption coefficient etc., for providing theoretical, the subsequent sample preparation supports.
The present invention is when design; Can use the computer simulation means of MATLAB programming; The photoelectric characteristic of analog computation metallic cermet films; Select suitable doping metals and proportioning according to designing requirement then, or confirm the optical constant of suitable dopant material, and select suitable metal material and prepare according to doping and dielectric material.As shown in Figure 1, the concrete steps of method for designing of the present invention are following:
The first step: select suitable dielectric material and doping metals
Second step: initial parameter.According to design object, selecting the optical constant refractive index
and the dissipation coefficient
of dielectric material and metal material is the initial value of this method for designing.Wherein:
=1 o'clock; Optical parametric for ceramic medium material;
=2 o'clock, be the optical parametric of doping metals material.
is the initial doping of doping metals (initial value is 0).That is: according to the design load of metallic cermet films transmissivity, the selective refraction rate
, the dissipation coefficient
Dielectric material and selective refraction rate
,The dissipation coefficient
The doping metals material, calculate the specific inductive capacity of dielectric material
Specific inductive capacity with the doping metals material
iBe imaginary unit.
The 3rd step: optical constant and the metal-doped amount of utilizing selected material of second step; Obtain the specific inductive capacity
of dielectric material, the specific inductive capacity of doping metals material
respectively according to formula (1).
The 4th step: according to the result of calculation in the 3rd step; Utilize formula (2) to calculate the specific inductive capacity
of metallic cermet films, utilize formula (1) to calculate the real part
and the imaginary part
of specific inductive capacity.
The 5th step: real part of permittivity and the imaginary part of utilizing the metallic cermet films of the 4th step calculating; According to formula (3),
calculates refractive index
and these two optical constants of
dissipation coefficient of metallic cermet films respectively.
The 6th step: according to the metallic cermet films optical constant of the 5th step calculating; Calculate the optical characteristics of metallic cermet films; As: transmissivity, absorption coefficient etc.; That is: light is when air exposure is gone into metallic cermet films; Can know according to refraction law: the transmissivity of metallic cermet films is calculated through formula (4)
, and absorption coefficient
can be calculated by formula (5)
.
The 7th step: according to design object; For example: in visible-range; The transmissivity that requires film is more than 80%; Calculate the transmissivity of the metallic cermet films of gained with the 6th step and judge comparison: if transmissivity T 80%, then revise metal-doped amount
after, continued to carry out the 3rd step and calculate; Till meeting design requirement, then the metal-doped amount of this moment is the final doping of asking;
The 8th step: optical constant (refractive index and dissipation coefficient) and the optical characteristics (transmissivity and absorption coefficient etc.) of export suitable metal-doped amount, metallic cermet films at this moment are with doping
qChange curve, for the preparation of follow-up optimal design and film sample provides the basis.
One embodiment of the present of invention below are provided.
Embodiment
ZnO is as novel direct broad-band gap II-VI family compound semiconductor material, and is nontoxic because of it, cost is low, broad stopband, advantage such as high temperature resistant are widely used in fields such as laser instrument, solar cell, detector, sensor, FPD.For designing novel light-operated components and parts or switch, hope is entrained in to design in the visible-range through Cu generally has high transmittance (> 80%) and in some wavelength coverages, have very low transmissivity.With ZnO (dielectric material) and Cu (doping metals material) is that example is carried out specification.When being 430nm, doping
=0.1 is explained as follows for example with lambda1-wavelength
:
At first, the optical constant (refractive index and dissipation coefficient) and the initial doping of ZnO material and Cu material in the input visible-range
q 0 The optical constant of ZnO
=2.09,
=0.02; The optical constant of Cu
=1.097,
=1.916;
The second, ZnO that asks respectively according to formula (1) and the specific inductive capacity of Cu
=4.3677+0.0836
i,
=-2.467+4.203
i
The 3rd, will
,
Calculate the composite dielectric constant of metallic cermet films for people's formula (2)
=4.2667+1.2305
i, the real part of specific inductive capacity (
) be 4.2667 and imaginary part (
) be 1.2305.
The 4th, the optical constant of calculating metallic cermet films according to formula (3) respectively is following:
The 5th, according to the optical constant of the 4th metallic cermet films obtained of step, the photoelectric characteristic (transmissivity and absorption coefficient etc.) of utilizing formula (4) and (5) calculating film as follows:
Judge according to the photoelectric characteristic (instance: the transmissivity and the absorption coefficient that have calculated film) of the above-mentioned optical constant calculating metallic cermet films of asking and according to design object; If not do not satisfy then revise repeating step three after the doping; After reaching target call, optical constant and the optical characteristics of exporting suitable doping and metallic cermet films at last are with doping
qChange curve, for specimen preparation provide the basis.
Fig. 2 is based on the specific inductive capacity of the metallic cermet films of the MG Theoretical Calculation different dopings with metal
qChange curve; Fig. 3, Fig. 4 are the different dopings of metallic cermet films optical constant with metal
qChange curve.Specific inductive capacity and the optical constant (refractive index, dissipation coefficient) that can find out metallic cermet films are along with doping
qIncrease and increase.Fig. 5 is the change curve of the optical characteristics (transmissivity) of metallic cermet films with metal-doped amount, and film has lower transmissivity in wavelength 430nm ~ 460nm scope, and other visible region transmissivity is all more than 80%, and copper metal doping amount
q≤0.5.Fig. 6, Fig. 7 are that the transmissivity of metallic cermet films is with the relation between the optical constant (refractive index n and dissipation coefficient k) of doping metals; Can find out by Fig. 6: at visible-range; When being 1.1 left and right sides, be that the transmissivity of the metallic cermet films of dielectric material is higher than 80% with ZnO except refractive index at doping metals.And can find out by Fig. 7: in visible-range, the dissipation coefficient that removes doping metals is 1.9 ~ 2.1 o'clock, is that the transmissivity of the metallic cermet films of dielectric material is higher than 80% with ZnO.Can find out simultaneously: when modulating with ZnO is that metallic cermet films and the transmissivity of dielectric material is when requiring to be higher than 90%; Can be 1.1 ~ 1.3 at refractive index (Refractive index), dissipation coefficient (Extinction Coefficient) be to select suitable doping metals material in 1.4 ~ 1.8 scopes; Otherwise, if want to modulate a kind of light-operated material or device, should be about 1.1 then in refractive index in the visible region, about 2 modulation of dissipation coefficient.This will provide theoretical foundation for the design of the light-operated components and parts in the novel visible scope, have certain value for shortening the R&D cycle with reducing cost.Therefore, the method for designing based on the theoretical metallic cermet films of MG has certain theory value and directive significance to novel thin film design and research and development of products.
Claims (1)
1. one kind based on the theoretical metallic cermet films photoelectric characteristic method for designing of Maxwell-Garnett, it is characterized in that in turn including the following steps:
(1) selective refraction rate
, the dissipation coefficient
Dielectric material and selective refraction rate
,The dissipation coefficient
The doping metals material, calculate the specific inductive capacity of dielectric material
Specific inductive capacity with the doping metals material
iBe imaginary unit;
(2) calculate the specific inductive capacity
of metallic cermet films according to formula
;
is metal-doped amount, and initial doping is 0;
(3) calculate the refractive index
and the dissipation coefficient
of metallic cermet films according to formula
,
;
is the real part of specific inductive capacity
,
be the imaginary part of specific inductive capacity
;
(4) calculate the transmissivity
and the absorption coefficient
of metallic cermet films according to formula
and
; Air refraction
,
are the incident light wavelength;
(5) transmissivity of required metallic cermet films transmissivity or absorption coefficient design load and said transmissivity
or absorption coefficient
are compared; If the result is inconsistent; The value of the metal-doped amount in the modify steps (2)
then; Repeated execution of steps (3) and step (4) then, the metal-doped amount
till unanimity as a result is the final doping of asking.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210037321XA CN102540462A (en) | 2012-02-20 | 2012-02-20 | Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210037321XA CN102540462A (en) | 2012-02-20 | 2012-02-20 | Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102540462A true CN102540462A (en) | 2012-07-04 |
Family
ID=46347724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210037321XA Pending CN102540462A (en) | 2012-02-20 | 2012-02-20 | Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102540462A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109374544A (en) * | 2018-11-02 | 2019-02-22 | 天津津航技术物理研究所 | The characterizing method of the aqueous depth of defect of optical medium film |
| CN110082313A (en) * | 2019-04-22 | 2019-08-02 | 天津大学 | A kind of micro-nano material refractive index measurement method based on prism-coupled instrument |
| CN113960512A (en) * | 2021-11-03 | 2022-01-21 | 电子科技大学 | Deduction calculation method for equivalent electromagnetic parameters of rubber plate type wave-absorbing material |
| WO2022193399A1 (en) * | 2021-03-19 | 2022-09-22 | 苏州大学 | Spectrally selective thermal radiator and design method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101238080A (en) * | 2005-08-29 | 2008-08-06 | 京瓷株式会社 | Dielectric ceramic, process for producing the same, and laminated ceramic capacitor |
| CN102057491A (en) * | 2008-04-03 | 2011-05-11 | 班德加普工程有限公司 | Designing the host of nano-structured optoelectronic devices to improve performance |
-
2012
- 2012-02-20 CN CN201210037321XA patent/CN102540462A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101238080A (en) * | 2005-08-29 | 2008-08-06 | 京瓷株式会社 | Dielectric ceramic, process for producing the same, and laminated ceramic capacitor |
| CN102057491A (en) * | 2008-04-03 | 2011-05-11 | 班德加普工程有限公司 | Designing the host of nano-structured optoelectronic devices to improve performance |
Non-Patent Citations (2)
| Title |
|---|
| 孙可为，金丹，许启明: "Maxwell-Garnett理论研究纳米铜膜的光学性质", 《材料导报》 * |
| 赵新宏，王建，李燕，吕国才，王成伟: "运用有效介质理论研究Au/AAO纳米复合结构的光学特性", 《西北师范大学学报（自然科学版）》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109374544A (en) * | 2018-11-02 | 2019-02-22 | 天津津航技术物理研究所 | The characterizing method of the aqueous depth of defect of optical medium film |
| CN109374544B (en) * | 2018-11-02 | 2021-02-12 | 天津津航技术物理研究所 | Characterization method of water-containing defect depth of optical medium film |
| CN110082313A (en) * | 2019-04-22 | 2019-08-02 | 天津大学 | A kind of micro-nano material refractive index measurement method based on prism-coupled instrument |
| CN110082313B (en) * | 2019-04-22 | 2021-08-20 | 天津大学 | Micro-nano material refractive index measurement method based on prism coupler |
| WO2022193399A1 (en) * | 2021-03-19 | 2022-09-22 | 苏州大学 | Spectrally selective thermal radiator and design method therefor |
| CN113960512A (en) * | 2021-11-03 | 2022-01-21 | 电子科技大学 | Deduction calculation method for equivalent electromagnetic parameters of rubber plate type wave-absorbing material |
| CN113960512B (en) * | 2021-11-03 | 2023-03-14 | 电子科技大学 | Deduction calculation method for equivalent electromagnetic parameters of rubber plate type wave-absorbing material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hu et al. | Giant second-harmonic generation response and large band gap in the partially fluorinated mid-infrared oxide RbTeMo2O8F | |
| Wang et al. | Design of I2–II–IV–VI4 semiconductors through element substitution: the thermodynamic stability limit and chemical trend | |
| Chi et al. | Designing sulfide borate as a novel type of second-order nonlinear-optical material | |
| Yang et al. | Modeling off-stoichiometry materials with a high-throughput ab-initio approach | |
| Vu et al. | A theoretical and experimental study of the valence-band electronic structure and optical constants of quaternary copper mercury tin sulfide, Cu2HgSnS4, a potential material for optoelectronics and solar cells | |
| Chen et al. | Investigation of antireflection Nb2O5 thin films by the sputtering method under different deposition parameters | |
| Tanner et al. | A superconducting nanowire single photon detector on lithium niobate | |
| CN102540462A (en) | Maxwell-Garnett theory based design method for metal ceramic film photoelectric characteristics | |
| CN109992867B (en) | Composite material characteristic research simulation method for cubic zirconia doping Y, nb | |
| Wang et al. | Ca2B5O9Cl and Sr2B5O9Cl: Nonlinear optical crystals with deep-ultraviolet transparency windows | |
| Rocquefelte et al. | Investigation of the origin of the empirical relationship between refractive index and density on the basis of first principles calculations for the refractive indices of various TiO2 phases | |
| Zhang et al. | A luminescent solar concentrator ray tracing simulator with a graphical user interface: features and applications | |
| Zhao et al. | Rb10Zn4Sn4S17: a chalcogenide with large laser damage threshold improved from the Mn-based analogue | |
| Xiong et al. | Visible to near-infrared coherent perfect absorption in monolayer graphene | |
| CN104834026A (en) | Broadband light transparent continuous metal film structure and implementation method thereof | |
| Sahouane et al. | Realization and modeling of multilayer antireflection coatings for solar cells application | |
| Ji et al. | Ba6 (Cu x Z y) Sn4S16 (Z= Mg, Mn, Zn, Cd, In, Bi, Sn): High Chemical Flexibility Resulting in Good Nonlinear-Optical Properties | |
| Chen et al. | Absorption enhancement in thin film a-Si solar cells with double-sided SiO2 particle layers | |
| Haye et al. | Experimental and theoretical infrared signatures of REMO3 (RE= La, Pr, Nd, Sm, and M= Co, Fe) perovskites | |
| Brun et al. | Optimizing Dirac fermions quasi-confinement by potential smoothness engineering | |
| Li et al. | Light absorption enhancement in thin-film solar cells by embedded lossless silica nanoparticles | |
| Wang et al. | Sensitive chemical potential sensor based on graphene hyperbolic metamaterials | |
| Liu et al. | All polymer asymmetric Mach–Zehnder interferometer waveguide sensor by imprinting bonding and laser polishing | |
| Sun et al. | Discriminating crystal binding from the atomic trapping of a core electron at energy levels shifted by surface relaxation or nanosolid formation | |
| Wu et al. | Giant broadband one way transmission based on directional mie scattering and asymmetric grating diffraction effects |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120704 |