CN102534750A - Traveling wave magnetic field method for improving resistivity uniformity of zone-melted silicon single crystal - Google Patents
Traveling wave magnetic field method for improving resistivity uniformity of zone-melted silicon single crystal Download PDFInfo
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- CN102534750A CN102534750A CN2012100597530A CN201210059753A CN102534750A CN 102534750 A CN102534750 A CN 102534750A CN 2012100597530 A CN2012100597530 A CN 2012100597530A CN 201210059753 A CN201210059753 A CN 201210059753A CN 102534750 A CN102534750 A CN 102534750A
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Abstract
The invention relates to a traveling wave magnetic field method for improving the resistivity uniformity of a zone-melted silicon single crystal. The method is characterized in that: a traveling wave magnetic field generator is arranged outside a silicon melt, and a traveling wave magnetic field is applied to the silicon melt in the process of pulling the zone-melted silicon single crystal; the longitudinal convection intensity of the silicon melt at the central position of the zone-melted silicon single crystal is increased through the traveling wave magnetic field, so that the flow intensity of the edge position of the silicon melt is increased; the traveling wave magnetic field generator is a cylindrical generator, the convection of the silicon melt has axial symmetry through a cylindrical traveling wave magnetic field generated by the cylindrical generator, the distance between an N pole and an S pole of the traveling wave magnetic field is 1 to 50cm, the maximum intensity of the magnetic field is 400 to 800 Gauss, and the speed of the magnetic field is 1 to 4cm/s; and by controlling the distance between the N pole and the S pole of the traveling wave magnetic field, adjusting a convection path and increasing the convection intensity, a dopant is more uniformly distributed in the silicon melt, and the radial resistivity uniformity of the zone-melted gas-doped silicon single crystal is improved.
Description
Technical field
The present invention relates to a kind of working method of zone-melted silicon single crystal, a kind of especially travelling-magnetic-field method that improves the zone-melted silicon single crystal resistivity evenness.
Background technology
Adopt gas to mix method production area silicon crystal, the silicon single-crystal that its cost will be produced far below the NTD method, but radially resistivity evenness is also poor than the NTD zone-melted silicon single crystal for it, also needs further to improve.
Zone-melted silicon single crystal radially resistivity evenness is poor; Mainly be because gas is mixed in the process, doping agent gets in the silicon melt, so the silicon melt surface concn is higher through the surface of silicon melt; Inner concentration is lower, thereby causes the distribution of doping agent in silicon melt more inhomogeneous.Improving inhomogeneity method at present, mainly is to reach through the convection current that strengthens silicon melt.Improve Qu Rongqi mix silicon single-crystal radially the method for resistivity evenness mainly contain: lower shaft rotating method, go up the eccentric shaft crystal pulling method and optimize go up change, change down between method such as ratio, but still undesirable to inhomogeneity raising.
Travelling-magnetic-field is to form the intensive convection current in iron and steel, non-ferrous metal industry application aims, and flowing of metal melt will could be smashed dendritic crystalline substance fast, forms equi-axed crystal, thereby obtains the favorable mechanical performance.
The KRISTMAG project of having entered to develop energy-conservation magnetic field in Europe has been used travelling-magnetic-field in vertical pulling method (Czochralski).But application aims is to reduce the waste of magnetic field to electric power, save energy.This is because the variation magnetic field only needs more weak magneticstrength just can reach the influence identical to melt with the stationary magnetic field.In order to prevent the loss of metal furnace wall to magnetic field, this kind travelling-magnetic-field is placed on burner hearth inside, and plays the effect of heating simultaneously, and its material is resistant to elevated temperatures graphite.
The method that design is different from the raising zone-melted silicon single crystal resistivity evenness of Europe technology is those skilled in the art of the present technique's a problem; The effect of travelling-magnetic-field is to form silicon melt good flow mode; And thereby the convection current of promotion silicon melt obtains mixing effect preferably, the homogeneity of raising dopant distribution.Thereby need make an experiment to the influence of melt flow form, flow strength and study the travelling-magnetic-field parameters.
Summary of the invention
The object of the invention is exactly for overcoming the situation of prior art, provide a kind of new method to improve the zone-melted silicon single crystal resistivity evenness, and new method adopts travelling-magnetic-field, and it act as the convection current that promotes silicon melt, thereby makes dopant distribution more even.Magnetic Field Design all, magneticstrength, changes of magnetic field frequency etc. are different with the energy-conservation travelling-magnetic-field in Europe.
The present invention realizes through such technical scheme: a kind of travelling-magnetic-field method that improves the zone-melted silicon single crystal resistivity evenness; It is characterized in that; At the outside travelling-magnetic-field producer of installing of silicon melt, in zone-melted silicon single crystal crystal pulling process, apply travelling-magnetic-field to silicon melt;
Strengthen vertical convection intensity of zone-melted silicon single crystal centre silicon melt through travelling-magnetic-field, and then drive the flow strength of silicon melt edge;
Said travelling-magnetic-field producer adopts the round tube type producer; The round tube type travelling-magnetic-field that the round tube type producer produces makes the convection current of silicon melt have axial symmetry; The spacing of the travelling-magnetic-field N utmost point and the S utmost point is 1～50cm, and the maximum strength in magnetic field is 400～800Gauss, and magnetic field speed is 1～4cm/s; Through control travelling-magnetic-field N utmost point S interpole gap, adjustment convection current path and increase convection intensity finally make the more even distribution of doping agent in silicon melt, improve the homogeneity of doping agent; Said method comprises the steps:
A) at first with oven door opening, with fibrous paper with the fire door inwall, go up furnace chamber, go up part wipings such as axle, coil and heat-preservation cylinder one time;
B) chuck is installed in the polycrystal head, and screws up with a wrench, afterwards chuck is installed in the axle low side, adjust the polycrystalline charge bar afterwards and make it to be vertical state;
C) coil and heat-preservation cylinder are installed then, and are carried out horizontal adjustment with water level gauge, carry out the centering of coil afterwards with special centering instrument, afterwards graphite annulus is stretched out, the decline polycrystalline makes it to be positioned at the about 3mm in graphite annulus top;
D) find time, charge into Ar gas and make furnace pressure reach 4 bar, slowly increase power afterwards and carry out preheating, be upwards to rise monocrystalline after 30 minutes graphite annulus to be withdrawed from when making graphite annulus regain starting position warm up time, and decline polycrystalline charge bar heats;
E) treat that the melting zone appears in polycrystalline charge bar lower end after, the rising seed crystal contacts with the melting zone and carries out overheated seeding;
F) after seeding finished, speed was carried out the drawing-down neck under opening: thin neck diameter of phi 2～3mm, and length is 150mm;
G) speed expands shoulder under the reduction, begins to feed impurity gas this moment, and opens travelling-magnetic-field; Set the peak strength of travelling-magnetic-field, when expansion shoulder diameter reaches set(ting)value, reduce lower shaft speed and begin isodiametric growth; After growth is accomplished at last, the ending blowing out, and take out silicon single-crystal;
The zone-melted silicon single crystal resistivity evenness for preparing according to above-mentioned steps reaches RRV＜10%.
The invention has the beneficial effects as follows: the effect of travelling-magnetic-field is to form silicon melt good flow mode; Thereby and promote the convection current of silicon melt to obtain mixing effect preferably; Improve the homogeneity of dopant distribution; Adopt the present invention, can effectively promote the convection current of silicon melt, improve the radially resistivity evenness that Qu Rongqi mixes silicon single-crystal.
Description of drawings
Fig. 1 is a travelling-magnetic-field producer scheme of installation.
Wherein 1. is heater coil, 2. is heat-preservation cylinder, 3. is the travelling-magnetic-field producer.
Embodiment
Understand the present invention for clearer, describe the present invention in detail in conjunction with accompanying drawing and embodiment:
As shown in Figure 1, through at the outside travelling-magnetic-field producer of installing of silicon melt, in the crystal pulling process, apply travelling-magnetic-field to silicon melt; Described travelling-magnetic-field producer is the round tube type producer.
This embodiment adopts the round tube type travelling-magnetic-field, compares and bilateral and monolateral travelling-magnetic-field, and the round tube type travelling-magnetic-field can make the convection current of silicon melt have axial symmetry, improves the radially resistivity evenness of silicon single-crystal.The spacing of the travelling-magnetic-field N utmost point and the S utmost point is 1 ~ 50cm; The maximum strength in magnetic field is 400～800Gauss; Magnetic field speed is 1～4cm/s, and through such Magnetic Field Design, both can guarantee has preferably promoter action to streamed with intensity to silicon melt; Do not cause again simultaneously that strong convection causes silicon melt unstable, and then cause disconnected bud.
Zone melting furnace is a PVA FZ-30 type zone melting furnace, and the diameter that the molten gas in district is mixed silicon single-crystal is 153mm.
At first with oven door opening, with fibrous paper with the fire door inwall, go up furnace chamber, go up part wipings such as axle, coil and heat-preservation cylinder one time;
Chuck is installed in the polycrystal head, and screws up with a wrench, afterwards chuck is installed in the axle low side, adjust the polycrystalline charge bar afterwards and make it to be vertical state; Coil and heat-preservation cylinder are installed then, and are carried out horizontal adjustment with water level gauge.Carry out the centering of coil afterwards with special centering instrument.Afterwards graphite annulus is stretched out, the decline polycrystalline makes it to be positioned at the about 3mm in graphite annulus top;
Find time, charge into Ar gas and make furnace pressure reach 4bar, slowly increase power afterwards and carry out preheating, be 30 minutes warm up time.Upwards rise monocrystalline afterwards and graphite annulus is withdrawed from when making graphite annulus regain starting position, decline polycrystalline charge bar heats.
After treating that the melting zone appears in polycrystalline charge bar lower end, the rising seed crystal contacts with the melting zone and carries out overheated seeding.
After seeding finished, speed was carried out the drawing-down neck under opening: thin neck diameter of phi 2～3mm, and length is 150mm;
Speed expands shoulder under reducing, and begins to feed impurity gas this moment, and opens travelling-magnetic-field, sets the peak strength of travelling-magnetic-field.When expansion shoulder diameter reaches set(ting)value, reduce lower shaft speed and begin isodiametric growth.After growth is accomplished at last, the ending blowing out, and take out silicon single-crystal.
The present invention has adopted travelling-magnetic-field, and it act as the convection current that promotes silicon melt, thereby makes dopant distribution more even.Magnetic Field Design all, magneticstrength, changes of magnetic field frequency etc. are different with the energy-conservation travelling-magnetic-field in Europe.
Process discovers that travelling-magnetic-field has mainly been strengthened vertical convection intensity of centre melt, and then drives the flow strength of silicon melt edge, makes whole silicon melts can both obtain mixed effect preferably.Wherein travelling-magnetic-field N utmost point S interpole gap mainly influences flowing-path, and travelling-magnetic-field speed and intensity all have influence to a certain degree to the intensity and the convection current path of melt convection.
Through adjustment convection current path and increase convection intensity, finally make the distribution of doping agent in silicon melt better evenly, effectively improve the homogeneity of doping agent.Rotatingfield mainly promotes the silicon melt convection current of same level height, but travelling-magnetic-field all has the good mixing effect through the vertical convection current that promotes the center melt to whole silicon melts.
According to above-mentioned explanation, can realize scheme of the present invention in conjunction with art technology.
Claims (1)
1. a travelling-magnetic-field method that improves the zone-melted silicon single crystal resistivity evenness is characterized in that, at the outside travelling-magnetic-field producer of installing of silicon melt, in zone-melted silicon single crystal crystal pulling process, applies travelling-magnetic-field to silicon melt; Strengthen vertical convection intensity of zone-melted silicon single crystal centre silicon melt through travelling-magnetic-field, and then drive the flow strength of silicon melt edge;
Said travelling-magnetic-field producer adopts the round tube type producer; The round tube type travelling-magnetic-field that the round tube type producer produces makes the convection current of silicon melt have axial symmetry; The spacing of the travelling-magnetic-field N utmost point and the S utmost point is 1～50cm, and the maximum strength in magnetic field is 400～800Gauss, and magnetic field speed is 1～4cm/s; Through control travelling-magnetic-field N utmost point S interpole gap, adjustment convection current path and increase convection intensity finally make the more even distribution of doping agent in silicon melt, improve the homogeneity of doping agent; Said method comprises the steps:
A) at first with oven door opening, with fibrous paper with the fire door inwall, go up furnace chamber, go up part wipings such as axle, coil and heat-preservation cylinder one time;
B) chuck is installed in the polycrystal head, and screws up with a wrench, afterwards chuck is installed in the axle low side, adjust the polycrystalline charge bar afterwards and make it to be vertical state;
C) coil and heat-preservation cylinder are installed then, and are carried out horizontal adjustment with water level gauge, carry out the centering of coil afterwards with special centering instrument, afterwards graphite annulus is stretched out, the decline polycrystalline makes it to be positioned at the about 3mm in graphite annulus top;
D) find time, charge into Ar gas and make furnace pressure reach 4 bar, slowly increase power afterwards and carry out preheating, be upwards to rise monocrystalline after 30 minutes graphite annulus to be withdrawed from when making graphite annulus regain starting position warm up time, and decline polycrystalline charge bar heats;
E) treat that the melting zone appears in polycrystalline charge bar lower end after, the rising seed crystal contacts with the melting zone and carries out overheated seeding;
F) after seeding finished, speed was carried out the drawing-down neck under opening: thin neck diameter of phi 2～3mm, and length is 150mm;
G) speed expands shoulder under the reduction, begins to feed impurity gas this moment, and opens travelling-magnetic-field; Set the peak strength of travelling-magnetic-field, when expansion shoulder diameter reaches set(ting)value, reduce lower shaft speed and begin isodiametric growth; After growth is accomplished at last, the ending blowing out, and take out silicon single-crystal;
The zone-melted silicon single crystal resistivity evenness for preparing according to above-mentioned steps reaches RRV＜10%.
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| CN2012100597530A CN102534750A (en) | 2012-03-08 | 2012-03-08 | Traveling wave magnetic field method for improving resistivity uniformity of zone-melted silicon single crystal |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109696345A (en) * | 2019-01-31 | 2019-04-30 | 内蒙古通威高纯晶硅有限公司 | A kind of phosphorus boron sample club head preheating crystal pulling method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258092A (en) * | 1991-03-22 | 1993-11-02 | Shin-Etsu Handotai Co., Ltd. | Method of growing silicon monocrystalline rod |
| CN101845667A (en) * | 2010-06-30 | 2010-09-29 | 峨嵋半导体材料研究所 | Method for producing high-resistivity monocrystalline silicon |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258092A (en) * | 1991-03-22 | 1993-11-02 | Shin-Etsu Handotai Co., Ltd. | Method of growing silicon monocrystalline rod |
| CN101845667A (en) * | 2010-06-30 | 2010-09-29 | 峨嵋半导体材料研究所 | Method for producing high-resistivity monocrystalline silicon |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109696345A (en) * | 2019-01-31 | 2019-04-30 | 内蒙古通威高纯晶硅有限公司 | A kind of phosphorus boron sample club head preheating crystal pulling method |
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Application publication date: 20120704 |