CN102533166A - Bonding film composition used for semiconductor assembly and bonding film formed by the same - Google Patents
Bonding film composition used for semiconductor assembly and bonding film formed by the same Download PDFInfo
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- CN102533166A CN102533166A CN2011101936640A CN201110193664A CN102533166A CN 102533166 A CN102533166 A CN 102533166A CN 2011101936640 A CN2011101936640 A CN 2011101936640A CN 201110193664 A CN201110193664 A CN 201110193664A CN 102533166 A CN102533166 A CN 102533166A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Abstract
The present invention discloses a bonding film composition used for a semiconductor assembly, comprising an acrylic resin, an epoxy resin, an aromatic amine hardener, a filter and a silane coupling agent. The bonding film composition keeps a low melt viscosity and a high residual curing ratio after a curing circulation by reducing a curing reaction rate, so that a gap is removed from a moulding process using an epoxy moulding compound (EMC), thereby ensuring a high reliability. The present invention also discloses a bonding film which is formed by the bonding film composition and used for the semiconductor assembly.
Description
Technical field
The present invention relates to be used for the adhesive film compsn of semi-conductor assembling and the adhesive film that forms by said compsn.More specifically; The present invention relates to be used for the adhesive film compsn of semi-conductor assembling; It comprises the adhesive film compsn of acrylics, epoxy resin, aromatic amine hardener, filler and the silane coupling agent of specified quantitative; Through reducing low melting viscosity and the high residue curing ratio after curing reaction speed keeps cure cycle, make with epoxy mold compound (EMC) thus molding process in the removal space present high reliability.
Background technology
Along with the development trend of recent small size or jumbo semiconducter device, adhesive film is used for bonding together semiconducter device or bond together semiconducter device and support component.The adhesive film that is used for semi-conductor assembling be used for cutting technique fixedly the cutting film of semiconductor crystal wafer use together.
The semiconductor crystal wafer packaging technology comprises cutting technique, expansion technology and pick-up process.In cutting technique, cutting film and adhesive film are combined into a film, then semiconductor crystal wafer are pasted on this and also cut with circular diamond blade.Recently, adopt following technology: only the inner part of semiconductor crystal wafer uses laser radiation to cut selectively, and semiconductor crystal wafer and adhesive film are expanded together then, and cut simultaneously and cut.
According to nearest technology, cutting film and adhesive film are installed on the semiconductor crystal wafer, and semiconductor crystal wafer is cut open and at high temperature deposits through chip attachment process during through cutting technique.For the chip that fixedly piles up, under 125 to 150 ℃, carry out Procuring technology, continue the scheduled time, the semiconducter device after completion is piled up carries out the EMC molding process.
Simultaneously; Though because the fixedly wiring on the circuit card of semiconductor crystal wafer and irregular part possibly occur; But the tack coat that is deposited on the circuit card can have improved safety through initial minimizing space, and said space causes because of the flowability in the attachment process of at high temperature carrying out.Yet the space is removed limitedly in the chip attachment process, has therefore studied in the EMC molding process, further to remove the space., because the phenols cure system has comparatively faster curing reaction speed, so be difficult in the EMC molding process, remove the space.Therefore, the present invention adopts a kind of cure system with low curing reaction speed after Procuring technology, to keep low melting viscosity and high residue curing ratio, for the semi-conductor assembling with high reliability adhesive film is provided thus.
Summary of the invention
One aspect of the present invention provides a kind of adhesive film compsn that comprises acrylics, epoxy resin, aromatic amine hardener, filler and silane coupling agent.Said adhesive film compsn can have 2.0 * 10 after 2 cure cycle under 175 ℃
6Pool (P) or littler melt viscosity, each said cure cycle were all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.
In one embodiment, said adhesive film compsn can have 0.1 * 10 after 2 cure cycle under 175 ℃
6To 2.0 * 10
6The melt viscosity of pool, each said cure cycle were all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.
In one embodiment, said adhesive film compsn can have 3.5 * 10 after 6 cure cycle under 175 ℃
6Pool or littler melt viscosity, each said cure cycle were all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.
In one embodiment, said adhesive film compsn can have 0.5 * 10 after 6 cure cycle under 175 ℃
6To 3.0 * 10
6The melt viscosity of pool, each said cure cycle were all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.
Another aspect of the present invention provides the adhesive film compsn of silane coupling agent of filler and 0.05 to 5 weight % of aromatic amine hardener, 5 to the 40 weight % of epoxy resin, 2 to the 15 weight % of a kind of acrylics that comprises 50 to 85 weight % (wt%), 5 to 40 weight %.
In one embodiment, said acrylics can have-15 to 50 ℃ second-order transition temperature (Tg).
In one embodiment, said acrylics can have hydroxyl, epoxy group(ing) and carboxyl.
In one embodiment, said epoxy resin can have 300 to 5000g/mol weight-average molecular weight.
In one embodiment, said epoxy resin: the equivalence ratio of said aromatic amine hardener can be in 1: 0.5 to 1: 1.5 scope.
Another aspect of the present invention also provides a kind of adhesive film that is used for the semi-conductor assembling that is formed by said adhesive film compsn.
Embodiment
According to an embodiment of the invention, the adhesive film compsn comprises acrylics, epoxy resin, aromatic amine hardener, filler and silane coupling agent.This adhesive film compsn can have 2.0 * 10 after 2 cure cycle under 175 ℃
6Pool (P) or littler melt viscosity, each cure cycle were all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.
To cut film and adhesive film and be installed on the semiconductor crystal wafer through attachment process, cutting and deposition, in attachment process, Procuring technology was carried out 60 minutes under 125 to 150 ℃, and wire-bonded (wire bonding) was carried out under 150 ℃ 10 minutes then.
The adhesive film compsn can be through reducing the curing reaction speed of said composition under the simulated conditions of conventional semiconductor crystal wafer packaging technology; In the EMC molding process, guarantee safety, with low melting viscosity and the high residue curing ratio after the maintenance cure cycle through removing the space.
Melt viscosity can known by one of skill in the art any method be measured.For example, can use advanced rheology expanding system (advanced rheometric expansion system, ARES).
The adhesive film compsn can have 2.0 * 10 after 2 cure cycle under 175 ℃
6Pool (P) or littler melt viscosity, each cure cycle were all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.Melt viscosity is preferably 0.1 * 10
6Pool (P) is to 2.0 * 10
6Pool (P), more preferably 0.8 * 10
6Pool (P) is to 1.8 * 10
6Pool (P).
The adhesive film compsn can have 3.5 * 10 after 6 cure cycle under 175 ℃
6Pool (P) or littler melt viscosity, each circulation were all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.Melt viscosity is preferably 0.5 * 10
6Pool (P) is to 3.0 * 10
6Pool (P), more preferably 2.0 * 10
6Pool (P) is to 3.0 * 10
6Pool (P).
The adhesive film compsn can comprise acrylics, 5 to 40wt% epoxy resin, 2 to 15wt% aromatic amine hardener, 5 to 40wt% filler and 0.05 to 5wt% the silane coupling agent of 50 to 85 weight % (wt%).
Acrylics
Acrylics is the film forming rubber constituent of a kind of shape, and can comprise hydroxyl, epoxy group(ing) or carboxyl.Particularly, acrylics can be the elastomer resin that comprises hydroxyl or epoxy group(ing).Acrylics can include but not limited at least a in vinyl cyanide, divinyl, isoprene, ethene, propylene, urethane, silicone, (methyl) alkyl acrylate, vinylbenzene and (methyl) glycidyl acrylate.This acrylics can have-15 to 50 ℃ second-order transition temperature (Tg).In this scope, acrylics provides the formability of suitable membrane, and the complete processing of assembling with adhesive film for semi-conductor provides favourable condition.
Acrylics can have 400,000 to 1,200, the weight-average molecular weight of 000g/mol.In this scope, the deterioration of adhesive tape burr (type burring) or chip pickup performance can not take place.Particularly, acrylics can have 600,000 to 1,000, the weight-average molecular weight of 000g/mol.
With respect to the total amount of adhesive film compsn, the content of acrylics can be 50 to 85wt%.When content during less than 50wt%, just the adhesive tape burr possibly take place, and in chip pickup technology, dual chip pickup possibly take place (double die pick-up) in cutting technique.In addition, when content during greater than 85wt%, safety can reduce.With respect to the total amount of adhesive film compsn, the content of acrylics can be preferably 60 to 80wt%, and more preferably 65 to 75wt%.
Epoxy resin
As epoxy resin, any epoxy resin that demonstrates curing and tackiness agent function all can use.Yet epoxy resin can use and help forming the solid-state of film or chip pickup performance or approaching solid-state epoxy (epoxy), and at least one functional group can be arranged.
Epoxy resin can include but not limited at least a in phenol phenolic resin varnish, cresols phenolic resin varnish, bisphenol epoxy, polyfunctional epoxy resin, amine epoxy resin, heterocyclic ring epoxy resins, substituted epoxy resin and the naphthols epoxy resin.
Epoxy resin can have 130 to 2000g/eq epoxy equivalent (weight), is preferably 150 to 1000g/eq.When epoxy equivalent (weight) during less than 130g/eq, cured product can have the bounding force (adhesion) of variation.When epoxy equivalent (weight) during greater than 2000g/eq, second-order transition temperature can reduce, and can not obtain suitable thermotolerance.Epoxy resin can have 300 to 5000g/mol weight-average molecular weight.
With respect to the total amount of adhesive film compsn, the content of epoxy resin can be 5 to 40wt%.When content during less than 5wt%, cure component is not enough and cause the safety variation.When content during greater than 40wt%, the tensile strength of adhesive film can worsen.With respect to the total amount of adhesive film compsn, the content of epoxy resin can be preferably 10 to 30wt%, and more preferably 10 to 18wt%.
Aromatic amine hardener
Any known aromatic amine hardener all can be used as aromatic amine hardener.For example, can use the aromatic substance that has at least 2 amino and represent by following general formula 1 to 5.
Here, X
2For singly-bound or be selected from by-CH
2-,-CH
2CH
2-,-O-,-SO
2-,-NHCO-,-C (CH
3)
2A kind of in the-group formed with-O-, and R
1To R
10Comprise at least one amino, and be Wasserstoffatoms, C1 to C4 alkyl or C1 to C4 alkoxyl group.
Here, R
11To R
18Comprise at least one amino, and be C 1 to C4 alkyl, C 1 to C4 alkoxyl group, hydroxyl, cyanic acid group or halogen atom.
Here, Z
1Be Wasserstoffatoms, C1 to C4 alkyl, C1 to C4 alkoxyl group or hydroxyl, and R
19To R
33Comprise at least one amino, and be Wasserstoffatoms, C1 to C4 alkyl, C1 to C4 alkoxyl group, hydroxyl, cyanic acid or halogen atom.
Here, R
34To R
41Comprise at least one amino, and be Wasserstoffatoms, C1 to C4 alkyl, C1 to C4 alkoxyl group, hydroxyl, cyanic acid or halogen atom.
Here, X
3Be to be selected from by-CH
2-,-NH-, ,-SO
2-,-S-and-a kind of in the group that O-forms, and R
42To R
49Comprise at least one amino, and be Wasserstoffatoms, C1 to C4 alkyl, C1 to C4 alkoxyl group, hydroxyl, cyanic acid or halogen atom.
The instance of the solidifying agent of general formula 1 expression can comprise 3,3 '-diaminobenzidine, 4,4 '-MDA, 4,4 '-or 3,3 '-diaminodiphenylsulfone(DDS), 4,4 '-diaminobenzene ketone, Ursol D, mphenylenediamine, toluylenediamine, 4,4,4 '-or 3,3 '-diaminobenzene ketone, 1,4 '-or 1,3 '-two (4-or 3-amino-cumene base) benzene, 1; 4 '-two (4-or 3-amino-benzene oxygen) benzene, 2,2 '-two [4-(4-or 3-amino-benzene oxygen) phenyl] propane, two [4-(4-or 3-amino-benzene oxygen) phenyl] sulfone, 2,2 '-two [4-(4-or 3-amino-benzene oxygen) phenyl] hexafluoro sulfone, 2,2 '-two [4-(4-or 3-amino-benzene oxygen) phenyl] HFC-236fa, 4,4 '-diamino--3,3 ', 5,5 '-tetrabutyl benzophenone, 4,4 '-diamino--3,3 ', 5; 5 '-tetraethyl-benzophenone, 4,4 '-diamino--3,3 ', 5,5 '-four-n-propyl benzophenone, 4,4 '-diamino--3,3 ', 5,5 '-tetra isopropyl benzophenone, 4,4 '-diamino--3,3 '; 5,5 '-tetramethyl-benzophenone, 4,4 '-diamino--3,3 ', 5,5 '-four-n-propyl ditane, 4,4 '-diamino--3,3 ', 5,5 '-tetramethyl-ditane, 4,4 '-diamino--3; 3 ', 5,5 '-tetra isopropyl ditane, 4,4 '-diamino--3,3 ', 5,5 '-tetraethyl-ditane, 4,4 '-diamino--3,3 '-dimethyl--5,5 '-diethylammonium ditane, 4,4 '-diamino--3; 3 '-dimethyl--5,5 '-di-isopropyl ditane, 4,4 '-diamino--3,3 '-diethylammonium-5,5 '-diethylammonium ditane, 4,4 '-diamino--3,5 '-dimethyl--3,5 '-diethylammonium ditane, 4,4 '-diamino--3,5-dimethyl--3 ', 5 '-di-isopropyl ditane, 4; 4 '-diamino--3,5-diethylammonium-3 ', 5 '-dibutyl ditane, 4,4 '-diamino--3,5-di-isopropyl-3 ', 5 '-dibutyl ditane, 4,4 '-diamino--3,3 '-di-isopropyl-5,5 '-dibutyl ditane, 4,4 '-diamino--3,3 '-dimethyl--5; 5 '-dibutyl ditane, 4,4 '-diamino--3,3 '-diethylammonium-5,5 '-dibutyl ditane, 4,4 '-diamino--3,3 '-dimethyl diphenyl methane, 4,4 '-diamino--3,3 '-diethylammonium ditane, 4,4 '-diamino--3,3 '-two-n-propyl ditane, 4; 4 '-diamino--3,3 '-di-isopropyl ditane, 4,4 '-diamino--3,3 '-dibutyl ditane, 4,4 '-diamino--3,3 ', 5-trimethylammonium ditane, 4,4 '-diamino--3,3 ', 5-triethyl ditane, 4; 4 '-diamino--3,3 ', 5-three-n-propyl ditane, 4,4 '-diamino--3,3 ', 5-triisopropyl ditane, 4,4 '-diamino--3,3 ', 5-tributyl ditane, 4,4 '-diamino--3-methyl-3 '-ethyl ditane, 4; 4 '-diamino--3-methyl-3 '-isopropyl diphenyl methane, 4,4 '-diamino--3-methyl-3 '-butyl ditane, 4,4 '-diamino--3-sec.-propyl-3 '-butyl ditane, 2,2 '-two (4-amino-3,5-xylyl) propane, 2,2 '-two (4-amino-3,5-diethyl phenyl) propane, 2,2 '-two (4-amino-3,5-two-n-proplbenzene base) propane, 2,2 '-it is two that (4-amino-3; The 5-diisopropylbenzyl) propane, 2,2 '-two (4-amino-3,5-two butylbenzene bases) propane, 4,4 '-diamino--3,3 ', 5,5 '-tetramethyl-diphenyl benzene anilide, 4,4 '-diamino--3,3 ', 5; 5 '-tetraethyl-diphenyl benzene anilide, 4,4 '-diamino--3,3 ', 5,5 '-four-n-propyl diphenyl benzene anilide, 4,4 '-diamino--3,3 ', 5,5 '-tetra isopropyl diphenyl benzene anilide, 4,4 '-diamino--3; 3 ', 5,5 '-tetrabutyl diphenyl benzene anilide, 4,4 '-diamino--3,3 ', 5,5 '-tetramethyl diphenyl sulfone, 4,4 '-diamino--3,3 ', 5; 5 '-tetraethyl-sulfobenzide, 4,4 '-diamino--3,3 ', 5,5 '-four-n-propyl sulfobenzide, 4,4 '-diamino--3,3 ', 5,5 '-tetra isopropyl sulfobenzide, 4,4 '-diamino--3; 3 ', 5,5 '-tetramethyl-phenyl ether, 4,4 '-diamino--3,3 ', 5,5 '-tetraethyl-phenyl ether, 4,4 '-diamino--3,3 ', 5; 5 '-four-n-propyl phenyl ether, 4,4 '-diamino--3,3 ', 5,5 '-tetra isopropyl phenyl ether, 4,4 '-diamino--3,3 ', 5,5 '-tetrabutyl phenyl ether, 3,3 '-diaminobenzene ketone, 3; 4-diaminobenzene ketone, 3,3 '-diaminodiphenyl oxide, 3,3 '-MDA, 3,4 '-MDA, 2,2 '-diaminostilbene, 2-diphenylethane, 4,4 '-diaminostilbene, 2-diphenylethane, 2,4-diamino-diphenyl amine, 4,4 '-diamino--octafluoro biphenyl and dianisidine etc.
The instance of the solidifying agent of general formula 2 expressions can comprise 1,5-diaminonaphthalene, 1,8-diaminonaphthalene, 2,3-diaminonaphthalene etc.The instance of the solidifying agent of general formula 3 expressions can comprise pararosaniline chloride (paraosaniline) etc.The instance of the solidifying agent of general formula 4 expressions can comprise 1,2-diamino-anthraquinone, 1,4-diamino-anthraquinone, 1,5-diamino-anthraquinone, 2; 6-diamino-anthraquinone, 1,4-diamino--2,3-dichloroanthraquinone, 1; 4-diamino--2,3-dicyano-9,10-anthraquinone, 1; 4-diamino--2,3-dihydroxyl-9,10-anthraquinone etc.The instance of the solidifying agent of general formula 5 expressions can comprise 3,7-diamino--2,8-dimethyl Dibenzothiophene sulfone, 2,7 diamin of luorene, 3,6-diamino-carbazole etc.
With respect to the total amount of adhesive film compsn, the content of aromatic amine hardener can be 2 to 15wt%, is preferably 3 to 12wt%, and more preferably 3 to 8wt%.
Epoxy resin: the equivalence ratio of aromatic amine hardener can be 1: 0.5 to 1: 1.5.In this scope, can prevent because of remaining the safety deterioration that unreacted epoxy hardener causes.
Filler
Inorganic or organic filler can be used as filler.The instance of mineral filler comprises such as metal ingredients such as gold and silver, copper and mickel powder with such as nonmetal compositions such as aluminum oxide, white lake, Marinco H, lime carbonate, magnesiumcarbonate, Calucium Silicate powder, Magnesium Silicate q-agent, quicklime, Natural manganese dioxide, aluminum oxide, aluminium nitride AlN, silicon-dioxide, SP 1, titanium oxide, glass, wustite, potteries.The instance of organic filler comprises carbon, loading material of rubber, polymer class filler etc.Though not restriction aspect profile and size, filler is generally preparing spherical SiO 2 and soft silica in mineral filler, and the mean diameter of 5nm to 10 μ m can be arranged.
With respect to the total amount of adhesive film compsn, the content of filler can be 5 to 40wt%.When content during less than 5wt%, the inside bounding force in the settable cementitious film can reduce, thus the safety variation.When content during greater than 40wt%, the tensile strength of adhesive film can reduce.With respect to the total amount of adhesive film compsn, the content of filler can be preferably 5 to 35wt%, and more preferably 5 to 15wt%.
Silane coupling agent
Silane coupling agent plays the effect of adhesion promotor, with the bounding force between the resin of the surface that in compsn forms, increases filler such as silicon-dioxide and adhesive film.Any known silane coupling agent all can be used as silane coupling agent; For example; The silane coupling agent such as 2-(3, the 4-epoxycyclohexyl)-ethyl trimethoxy silane, 3-glycidyl ether oxygen base Trimethoxy silane and the 3-glycidyl ether oxygen base propyl-triethoxysilicane that contain epoxy; Contain amino silane coupling agent such as N-2-(aminoethyl)-3-aminopropyl methyl dimethoxysilane, N-2-(aminoethyl)-3-aminopropyl trimethoxysilane, N-2-(aminoethyl)-3-aminopropyl triethoxysilane, 3-aminopropyl trimethoxysilane, 3-aminopropyl triethoxysilane, 3-triethoxysilyl-N-(1,3-dimethyl-butylidene) propylamine and N-phenyl-3-aminopropyl trimethoxysilane; The silane coupling agent such as 3-mercapto propyl group methyl dimethoxysilane and the 3-mercaptopropyltriethoxysilane that contain sulfydryl; And the silane coupling agent such as the 3-isocyanic ester propyl-triethoxysilicane that contain isocyanic ester.
With respect to the total amount of adhesive film compsn, the content of silane coupling agent can be about 0.05 to 5wt%.In this scope, can obtain excellent binding property and tensile strength.With respect to the total amount of adhesive film compsn, the content of silane coupling agent can be preferably 0.1 to 3wt%, and more preferably 0.1 to 2wt%.
The adhesive film compsn can further comprise organic solvent.Organic solvent is used to reduce the semi-conductor assembling with the viscosity of adhesive film compsn and help the formation of film.The instance of organic solvent can include but not limited to pimelinketone, toluene, YLENE, propylene glycol monomethyl ether, benzene, acetone, methyl ethyl ketone, THF and N.Remove the semi-conductor assembling with outside other components contents in the adhesive film compsn, the content of organic solvent can be 30 to 85wt%, but is not limited thereto.
Another aspect of the present invention provides a kind of adhesive film that is used for the semi-conductor assembling that is formed by above-mentioned adhesive film compsn.This adhesive film can be made through those skilled in the art's known method.For example, this adhesive film can make through following technology: filter the adhesive film compsn, be applied to preset thickness with coater, and in 80 to 150 ℃ following dry 5 to 30 minutes.
To understand the present invention better from following embodiment and Comparative Examples.Provide these embodiment only to be used to explain and be not to limit the scope of the present invention that limits appended claims.
Conspicuous to those skilled in the art explanation details is omitted at this.
Embodiment
Embodiment 1 to 3: the adhesive film preparation of compositions is used in the semi-conductor assembling
According to the composition of listing in the table 1, acrylics, epoxy resin, solidifying agent, filler and silane coupling agent are dissolved in the pimelinketone of 300 weight parts.Product is added in the cylindrical flask of the 1L that high speed agitator is housed, and disperseed 30 minutes with the speed of 5000rpm rapidly, prepare the adhesive film compsn thus.
Comparative Examples 1 and 2: the adhesive film preparation of compositions is used in the semi-conductor assembling
Except that the composition of listing in the table 1, prepare the adhesive film compsn according to the method identical with above embodiment.
Table 1 (unit: weight part, solid-state)
1, acrylics: SG-P3 (weight-average molecular weight: 850,000g/mol, Tg:15 ℃, NagaseChemtex)
2, phenoxy resin: E1256 (weight-average molecular weight: 50,000g/mol, Tg:95 ℃, japan epoxy resin)
3, epoxy resin: YDCN-500-1P (the cresols phenolic resin varnish, equivalent: 200g/eq, S.P.:52 ℃, Kukdo Chemical Co., Ltd)
4, solidifying agent 1:4,4 '-diaminodiphenylsulfone(DDS) (M.P.:177 ℃, Tokyo Chemical Industry)
5, solidifying agent 2:1,5-diaminonaphthalene (M.P.:187 ℃, Tokyo Chemical Industry)
6, solidifying agent 3:MEH-7800M (acid number: 175g/eq, S.P.:82 ℃, Meiwa Plastic)
7, phosphine curing catalyst: TPP (HOKKO Chemical)
8, filler: Aerosil-200 (Degussa)
9, silane coupling agent: KBM-303 (Shinetsu)
Test: the performance evaluation of adhesive film compsn
Estimate adhesive tape burr, chip pickup performance, melt viscosity, Young's modulus, dsc (DSC), residual curing ratio, chip shearing resistance (DSS), molded back space clearance and the anti-backflow property of the adhesive film compsn of preparation in embodiment 1 to 3 and Comparative Examples 1 and 2, and the result is shown in Table 2.
With coater the adhesive film compsn of preparation in embodiment 1 to 3 and Comparative Examples 1 and 2 is applied to the thickness of 20 μ m, and, forms adhesive film thus in 110 ℃ times dry 20 minutes.
Testing method
(1) adhesive tape burr
Each adhesive film is installed on the thick simulation wafer of 80 μ m, and cuts with automatic slitting saw (DFD-6361 (DISCO)).With respect to the total quantity of the chip pickup technology of carrying out at random, measure the quantity that occurs the adhesive tape burr in the line of cut.
(2) chip pickup performance
Each adhesive film is installed on the simulation wafer, cuts into the sample of predetermined size, and solidify with the UV exposure sources.Then, this sample carries out chip attachment to lead frame with die bonder (SDB-1000M, Secron limited-liability company).Chip attach technology is through carrying out with 2mm extension and 0.3mm stroke (stroke).After carrying out arbitrarily chip pickup, calculate the ratio of chip-count with the chip count of normally picking up of picking up failure, and represent with per-cent.
(3) melt viscosity
Each adhesive film is processed five layers layered product and is cut into the circular sample of diameter 8mm under 60 ℃.This sample has the thickness of 200 μ m.Measure melt viscosity down at 60 ℃ before solidifying.After carrying out 2 and 6 cure cycle respectively, measure melt viscosity with ARES down at 175 ℃, each said circulation all by 125 ℃ solidify down 60 minutes with subsequently 150 ℃ down curing formed in 10 minutes.Measure melt viscosity, with 5 ℃/minute speed sample is heated to 180 ℃ from 30 ℃ simultaneously.
(4) Young's modulus
Each adhesive film is processed four layers layered product and is cut into the big or small sample of 5.5mm * 15mm that is under 60 ℃.This sample has the thickness of 200 to 300 μ m.After carrying out 2 and 6 cure cycle respectively, under the condition identical, measure Young's modulus down at 175 ℃ with measuring melt viscosity.Measure this modulus, simultaneously sample is heated to 260 ℃ from 30 ℃ with 4 ℃/minute speed.Use dynamic mechanical analysis appearance Q800 (TA Instr Ltd.) to measure.
(5)DSC
Speed with 10 ℃/minute is heated in 300 ℃ the DSC of each adhesive film of use DSC (TA Instr Ltd.) mensuration setting up period from 0 ℃.
(6) residual curing ratio
Measure the initial DSC of each adhesive film before solidifying.After carrying out 2 and 6 cure cycle respectively, measure DSC (2 or 6 circulation after DSC), wherein each said circulation all by 125 ℃ solidify down 60 minutes with subsequently 150 ℃ down curing formed in 10 minutes.Residual curing ratio is calculated through following equation:
Residual curing ratio (%)=(2 or 6 circulation after DSC)/(initial DSC)
(7) chip shearing resistance (DSS)
The thick wafer of 530 μ m that scribbles the dioxide film is cut into has 5mm * chip of 5mm size.Under 60 ℃, these chips and each adhesive film are mounted film lamination.This layered product is cut into only stays adhesive segment.Through under 120 ℃, on hot plate, continuing to apply in 1 second the power of 1kgf; The last chip attachment that will have 5 * 5mm size is to the wafer with 10 * 10mm size; Then solidified 2 hours down at 175 ℃ 6 Procuring circulation backs, each said circulation was all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.Make sample moisture absorption 48 hours under 85 ℃/85RH%, and under 260 ℃ top temperature, carry out three times and reflux.Then, measure the chip shearing resistance down at 250 ℃.
(8) space, molded back clearance
Each adhesive film is installed on the thick wafer of the 80 μ m that scribble the dioxide film, and is cut into and has 10mm * chip of 10mm size.With these chip attachment to the QDP package.After 6 Procuring circulations; With the gained package with EMC (SG-8500B; Cheil Industries Inc., Korea S) to solidify 2 hours down 175 ℃ of lower mould 120 seconds and at 175 ℃, each said circulation was all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.Observe the space through ultrasonic tomogram scanning method (SAT), and calculate the per-cent of void area with respect to the chip total area.
(9) anti-backflow property
Each adhesive film is installed on the thick wafer of the 80 μ m that scribble the dioxide film, and is cut into and has 10mm * chip of 10mm size.With these chip attachment to the QDP package.After 6 Procuring circulations; With the gained package with EMC (SG-8500B; Cheil Industries Inc., Korea S) to solidify 2 hours down 175 ℃ of lower mould 120 seconds and at 175 ℃, each said circulation was all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.Products therefrom was positioned over 85 ℃/85RH% following 168 hours, and under 260 ℃ top temperature, carried out three times and reflux.Then, direct vision port.The package total quantity of every kind of compsn is 160, and the package quantitaes that occurs the slit after refluxing for three times is %.
Table 2: the performance of adhesive film
As shown in table 2; Adhesive film compsn among the embodiment 1 to 3 comprises the adhesive film composition component of specific ratios; Therefore low curing reaction rate and high residue curing ratio after can obtaining to solidify to keep low melting viscosity and the low elastic modulus under 175 ℃, are carried out molded with EMC under this temperature; Remove the space thus, this space occurrence rate in chip attachment process is 95% or higher in molding process.Yet in the Comparative Examples 1 with the phenol solidifying agent, the low residue curing ratio after obtaining to solidify is removed ratio to reduce the space, and therefore possibly break in anti-reflux test in residual space.In the Comparative Examples 2 with phenoxy resin, because phenoxy resin has than the low relatively weight-average molecular weight of vinyl resin, the adhesive tape burr occurs in cutting technique in a large number, and the chip pickup performance also slightly reduces.In addition, compare with embodiment 1 to 3, because phenoxy resin and the extra curing reaction of solidifying agent, the residual curing ratio after the curing reduces and melt viscosity slightly increases, and removes and compares thereby reduced space after molded.
Though disclose some embodiments at this, be construed as, these embodiments only provide with the approach of explanation, and under the situation that does not deviate from the spirit and scope of the present invention, can make various modifications, change and change.Therefore, scope of the present invention should only limit to appended claims and its equivalent form of value.
Claims (10)
1. an adhesive film compsn comprises acrylics, epoxy resin, aromatic amine hardener, filler and silane coupling agent, and said adhesive film compsn has 2.0 * 10 after 2 cure cycle under 175 ℃
6Pool or littler melt viscosity, each said cure cycle were all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.
2. adhesive film compsn as claimed in claim 1, wherein said adhesive film compsn has 0.1 * 10 after 2 cure cycle under 175 ℃
6To 2.0 * 10
6The melt viscosity of pool, each said cure cycle were all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.
3. adhesive film compsn as claimed in claim 1, wherein said adhesive film compsn has 3.5 * 10 after 6 cure cycle under 175 ℃
6Pool or littler melt viscosity, each said cure cycle were all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.
4. adhesive film compsn as claimed in claim 1, wherein said adhesive film compsn has 0.5 * 10 after 6 cure cycle under 175 ℃
6To 3.0 * 10
6The melt viscosity of pool, each said cure cycle were all formed by solidifying 60 minutes down and solidify down at 150 ℃ subsequently at 125 ℃ in 10 minutes.
5. an adhesive film compsn comprises the acrylics of 50 to 85 weight %, the epoxy resin of 5 to 40 weight %, the aromatic amine hardener of 2 to 15 weight %, the filler of 5 to 40 weight % and the silane coupling agent of 0.05 to 5 weight %.
6. adhesive film compsn as claimed in claim 5, wherein said acrylics have-15 to 50 ℃ second-order transition temperature.
7. adhesive film compsn as claimed in claim 5, wherein said acrylics comprises hydroxyl, epoxy group(ing) and carboxyl.
8. adhesive film compsn as claimed in claim 5, wherein said epoxy resin have 300 to 5000g/mol weight-average molecular weight.
9. adhesive film compsn as claimed in claim 5, wherein said epoxy resin: the equivalence ratio of said aromatic amine hardener is in 1: 0.5 to 1: 1.5 scope.
10. one kind is used for the adhesive film that semi-conductor is assembled, by forming like any described adhesive film compsn in the claim 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| KR10-2010-0131856 | 2010-12-21 | ||
| KR1020100131856A KR101340544B1 (en) | 2010-12-21 | 2010-12-21 | Bonding film composition for semiconductor assembly |
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| CN102533166A true CN102533166A (en) | 2012-07-04 |
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| KR (1) | KR101340544B1 (en) |
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| CN104327771A (en) * | 2014-11-05 | 2015-02-04 | 京东方科技集团股份有限公司 | Adhesive resin dielectric layer material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2895132B2 (en) * | 1990-01-23 | 1999-05-24 | 三井化学株式会社 | Adhesive for electrostatic flocking |
| CN101144000A (en) * | 2006-09-11 | 2008-03-19 | 第一毛织株式会社 | Adhesive film composition for semiconductor assembly, associated dicing die bonding film and semiconductor package |
| CN101205444A (en) * | 2006-12-13 | 2008-06-25 | 第一毛织株式会社 | Adhesive film composition, associated dicing die bonding film, and die package |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101019754B1 (en) * | 2008-12-29 | 2011-03-08 | 제일모직주식회사 | Adhesive composition and adhesive film using the same for semiconductor |
-
2010
- 2010-12-21 KR KR1020100131856A patent/KR101340544B1/en active IP Right Grant
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2011
- 2011-07-05 CN CN201110193664.0A patent/CN102533166B/en not_active Expired - Fee Related
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2895132B2 (en) * | 1990-01-23 | 1999-05-24 | 三井化学株式会社 | Adhesive for electrostatic flocking |
| CN101144000A (en) * | 2006-09-11 | 2008-03-19 | 第一毛织株式会社 | Adhesive film composition for semiconductor assembly, associated dicing die bonding film and semiconductor package |
| CN101205444A (en) * | 2006-12-13 | 2008-06-25 | 第一毛织株式会社 | Adhesive film composition, associated dicing die bonding film, and die package |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104327771A (en) * | 2014-11-05 | 2015-02-04 | 京东方科技集团股份有限公司 | Adhesive resin dielectric layer material |
| CN104327771B (en) * | 2014-11-05 | 2016-07-13 | 京东方科技集团股份有限公司 | A kind of adhesive resin dielectric layer material |
Also Published As
| Publication number | Publication date |
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| TWI479004B (en) | 2015-04-01 |
| KR101340544B1 (en) | 2013-12-11 |
| CN102533166B (en) | 2015-04-15 |
| TW201226512A (en) | 2012-07-01 |
| KR20120070338A (en) | 2012-06-29 |
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