CN102522473A - Semiconductor light-emitting device, production method of semiconductor light-emitting device, and semiconductor light-emitting device packaging part - Google Patents
Semiconductor light-emitting device, production method of semiconductor light-emitting device, and semiconductor light-emitting device packaging part Download PDFInfo
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Abstract
The invention provides a semiconductor light-emitting device, a production method of the semiconductor light-emitting device, and a semiconductor light-emitting device packaging part using the semiconductor light-emitting device. The semiconductor light-emitting device comprises a semiconductor layer of a first conduction type, an active layer, a semiconductor layer of a second conduction type, a second electrode layer, an insulating layer, a first electrode layer and a conduction substrate, which are stacked in sequence. An exposed area of the second electrode layer is arranged at an interface between the second electrode layer and the semiconductor layer of the second conduction type. The first electrode layer comprises at least one contact hole, and the contact holes are electrically connected to the semiconductor layer of the first conduction type, are electrically insulated from the active layer and the semiconductor layer of the second conduction type, and extend from one surface of the first electrode layer to at least part of the semiconductor layer of the first conduction type.
Description
The application be that February 26, application number in 2009 are 200910118515.0 the applying date, denomination of invention divides an application for the patent application of " light emitting semiconductor device, manufacturing approach and semiconductor light emitting device packaging piece ".
Technical field
The present invention relates to a kind of light emitting semiconductor device, a kind of method and a kind of semiconductor light emitting device packaging piece that utilizes this light emitting semiconductor device of making this light emitting semiconductor device; More particularly; The present invention relates to a kind of like this light emitting semiconductor device, a kind of method and a kind of semiconductor light emitting device packaging piece that utilizes this light emitting semiconductor device of making this light emitting semiconductor device; Promptly; Said light emitting semiconductor device is guaranteed maximum light-emitting area so that luminous efficiency maximizes and carries out uniform current expansion (current spreading) through utilizing the little electrode of area, and guarantees low cost, high reliability and high-quality large-scale production.
Background technology
Light emitting semiconductor device comprises luminous material.For example; Light-emitting diode (LED) is to utilize the diode that combines with semiconductor; The power conversion that electronics and hole are combined to produce becomes light and radiative device; Half guiding element luminescent device is widely used as light-emitting device, display unit and light source, and has quickened the research and development of light emitting semiconductor device.
Specifically; Utilize the widespread usage of cell phone keyboard, side view finder (side viewer) and the camera flash memory of GaN based light-emitting diode to help to use the develop actively of the general illumination (general illumination) of light-emitting diode; Wherein, Developed and used widely the GaN based light-emitting diode in recent years energetically; The application of light-emitting diode, like the back light unit of large scale TV, the headlight and the general illumination of car, developed into from small and exquisite portable product have high power, the large product of high efficiency and high reliability.Therefore, need a kind of light source with the required performance of corresponding product.
Usually, the semiconductor junction luminescent device has the structure that p N-type semiconductor N and n N-type semiconductor N mutually combine.In the structure of semiconductor junction, can be through electronics and hole the compound light of launching in the zone that two types semiconductor mutually combines.For the exciting light emission, can between two semiconductors, form active layer.According to the position of the electrode of semiconductor layer, the semiconductor junction luminescent device comprises horizontal structure and vertical stratification.Said vertical stratification comprises epi-up structure and flip-chip (flip-chip) structure.As stated, consider the structural behaviour of the light emitting semiconductor device that the independent performance of products of basis is required in earnest.
Figure 1A and Figure 1B show the view according to the horizontal luminescent device of correlation technique.Fig. 1 C shows the cutaway view according to the vertical light-emitting device of correlation technique.Hereinafter, for the ease of explaining, in Figure 1A to Fig. 1 C, will suppose that the n type semiconductor layer contacts with substrate and the p type semiconductor layer is formed on the active layer and describes.
With reference to Figure 1A, with at first describing horizontal luminescent device with epi-up structure.In Figure 1A, the semiconductor layer that supposition is formed on the outermost edges is described for the p type semiconductor layer.Light emitting semiconductor device 1 comprises that non-conductive substrate 13, n type semiconductor layer 12, active layer 11 and p type semiconductor layer 10, n type electrode 15 are formed on the n type semiconductor layer 12; P type electrode 14 is formed on the p type semiconductor layer 10; And n type electrode 15 is connected to the external current source (not shown) with p type electrode 14, voltage is applied to light emitting semiconductor device 1.
When voltage was applied to light emitting semiconductor device 1 through electrode 14 and 15, electronics moved from n type semiconductor layer 12, and move from p type semiconductor layer 10 in the hole.Through the compound light of launching in electronics and hole, light emitting semiconductor device 1 comprises active layer 11, and from active layer 11 emission light.In active layer 11, activated the light emission of light emitting semiconductor device 1, thus emission light, in order to be electrically connected, n type electrode and p type electrode lay respectively on n type semiconductor layer 12 and the p type semiconductor layer 10 with minimum contact resistance.
The position of electrode can change according to the type of substrate.For example, when substrate 13 was the sapphire substrates (sapphire substrate) as non-conductive substrate, the electrode of n type semiconductor layer 12 can not be formed on the non-conductive substrate 13, and is formed on the n type semiconductor layer 12.
Therefore, with reference to Figure 1A, when n type electrode 15 is formed on 12 last times of n type semiconductor layer, consumes the p type semiconductor layer 10 that is formed on upside and the part of active layer 12, thereby form ohmic contact.The formation of electrode causes the light-emitting area of light emitting semiconductor device 1 to reduce, and therefore, luminous efficiency also reduces.
In Figure 1B, show horizontal luminescent device with the structure that improves luminous efficiency.Light emitting semiconductor device shown in Figure 1B is a flip-chip semiconductor luminescent device 2.Substrate 23 is positioned at the top.Electrode 24 with 25 respectively be formed on conductive substrate 28 on electrode contact 26 and contact with 27.Have nothing to do with electrode 24 and 25, the light of launching from active layer 21 passes substrate 23 emissions.Therefore, can prevent the reduction of the luminous efficiency that in light emitting semiconductor device, causes shown in Figure 1A.
Yet although the luminous efficiency of flip-chip light emitting device 2 is high, n type electrode in the luminescent device 2 and p type electrode need be arranged in the same plane and in light emitting semiconductor device 2, combine.After n type electrode and the combination of p type electrode, n type electrode may contact 26 and 27 fens with p type electrode and open with electrode.Therefore, need expensive accurate treatment facility.This can cause, and manufacturing cost increases, productivity ratio reduces, yield reduces and reliability of products reduces.
In order to solve the variety of issue that comprises the problems referred to above, the vertical light-emitting device of conductive substrate rather than non-conductive substrate has appearred utilizing.Luminescent device 3 shown in Fig. 1 C is vertical light-emitting devices.When using conductive substrate 33, n type electrode 35 can be formed in the substrate 33.Conductive substrate 33 can (for example, Si) be formed by electric conducting material.Usually, because lattice mismatch is difficult on conductive substrate, form semiconductor layer.Therefore, the substrate that is easy to semiconductor growth layer through utilization makes semiconductor growth layer, then after the substrate that removal is used to grow, in conjunction with conductive substrate.
When removing non-conductive substrate, conductive substrate 33 is formed on the n type semiconductor layer 32, thereby luminescent device 3 has vertical stratification.When using conductive substrate 33, owing to can voltage be applied to n type semiconductor layer 32 through conductive substrate 33, so electrode can be formed in the substrate 33.Therefore, shown in Fig. 1 C, n type electrode 35 is formed on the conductive substrate 33, and p type electrode 34 is formed on the p type semiconductor layer 30, thereby can make the light emitting semiconductor device with vertical stratification.
Yet when manufacturing had large-area high-power light emitting device, for current expansion, the area that requires electrode and substrate was than high.Therefore, limited light outgoing (extraction), owing to optical absorption has caused light loss, reduced luminous efficiency, and reduced reliability of products
Summary of the invention
Aspect of the present invention provides a kind of light emitting semiconductor device; A kind of method and a kind of semiconductor light emitting device packaging piece that utilizes this light emitting semiconductor device of making this light emitting semiconductor device; Wherein, This light emitting semiconductor device is guaranteed maximum light-emitting area so that luminous efficiency maximizes and carries out uniform current expansion through the electrode that utilization has small size, and guarantees low cost, high reliability and high-quality large-scale production.
According to an aspect of the present invention; A kind of light emitting semiconductor device is provided; Said light emitting semiconductor device has semiconductor layer, the active layer of first conduction type of sequential cascade, semiconductor layer, the second electrode lay, insulating barrier, first electrode layer and the conductive substrate of second conduction type; Wherein, The second electrode lay has an exposed region at the interface between the semiconductor layer of the second electrode lay and second conduction type, first electrode layer comprises at least one contact hole, and said at least one contact hole is electrically connected to the semiconductor layer of first conduction type; With the semiconductor layer and the active layer electric insulation of second conduction type, and extend at least a portion of the semiconductor layer of first conduction type from a surface of first electrode layer.
Said light emitting semiconductor device also can comprise the electrode pad unit at the exposed region place that is formed on the second electrode lay.
The exposed region of the second electrode lay can be the through hole area exposed of the semiconductor layer formation of the semiconductor layer, active layer and second conduction type that are passed first conduction type.
The diameter of through hole can increase from the direction of the second electrode lay to the semiconductor layer of first conduction type
Insulating barrier can be formed on the inner surface of through hole.
The exposed region of the second electrode lay can be formed on the edge of light emitting semiconductor device
The second electrode lay can reflect the light that produces from active layer.
The second electrode lay can comprise a kind of metal of from the group of being made up of Ag, Al and Pl, selecting
Irregular pattern can be formed on the surface of semiconductor layer of first conduction type.
Irregular pattern can have photon crystal structure
Conductive substrate can comprise a kind of metal of from the group of being made up of Au, Ni, Cu and W, selecting.
Conductive substrate can comprise from the group that is made up of Si, Ge and GaAs, select a kind of
According to a further aspect in the invention; A kind of method of making light emitting semiconductor device is provided, and the step that said method comprises has: the semiconductor layer of the semiconductor layer of sequentially range upon range of first conduction type, active layer, second conduction type, the second electrode lay, insulating barrier, first electrode layer and conductive substrate; The exposed region of formation at the interface between the semiconductor layer of the second electrode lay and second conduction type; In first electrode layer, form at least one contact hole; Said contact hole is electrically connected to the semiconductor layer of first conduction type; With the semiconductor layer and the active layer electric insulation of second conduction type, and extend at least a portion of the semiconductor layer of first conduction type from a surface of first electrode layer.
The step that forms the exposed region of the second electrode lay can comprise the semiconductor layer of semiconductor layer, active layer and second conduction type of mesa etch first conduction type.
Conductive substrate can form through electro-plating method.Conductive substrate can be through the substrate associated methods by range upon range of.
According to another aspect of the invention, a kind of semiconductor light emitting device packaging piece is provided, said semiconductor light emitting device packaging piece comprises: the semiconductor light emitting device packaging piece main body has the surperficial recess that forms above that; First lead frame and second lead frame are installed to the semiconductor light emitting device packaging piece main body, are exposed to the lower surface place of said recess, and separate predetermined distance each other; Light emitting semiconductor device; Be installed to first lead frame; Wherein, Said light emitting semiconductor device has semiconductor layer, the active layer of first conduction type of sequential cascade, semiconductor layer, the second electrode lay, insulating barrier, first electrode layer and the conductive substrate of second conduction type; The second electrode lay has an exposed region at the interface between the semiconductor layer of the second electrode lay and second conduction type, first electrode layer comprises at least one contact hole, and said at least one contact hole is electrically connected to the semiconductor layer of first conduction type; With the semiconductor layer and the active layer electric insulation of second conduction type, and extend at least a portion of the semiconductor layer of first conduction type from a surface of first electrode layer.
Said light emitting semiconductor device also can comprise the electrode pad unit at the exposed region place that is formed on the second electrode lay, and the electrode pad unit is electrically connected to second lead frame.
Description of drawings
Through the detailed description of carrying out below in conjunction with accompanying drawing, of the present invention above will more be expressly understood with others, characteristic and other advantage, wherein:
Figure 1A shows the cutaway view of horizontal luminescent device;
Figure 1B shows the cutaway view of horizontal luminescent device;
Fig. 1 C shows the cutaway view of vertical light-emitting device;
Fig. 2 shows the perspective view of light emitting semiconductor device according to an exemplary embodiment of the present invention;
Fig. 3 shows the plane graph of the light emitting semiconductor device shown in Fig. 2;
Fig. 4 A shows the cutaway view of the light emitting semiconductor device shown in Fig. 3 of A-A ' intercepting along the line;
Fig. 4 B shows the cutaway view of the light emitting semiconductor device shown in Fig. 3 of B-B ' intercepting along the line;
Fig. 4 C shows the cutaway view of the light emitting semiconductor device shown in Fig. 3 of C-C ' intercepting along the line;
Fig. 5 shows according to the photoemissive view in the light emitting semiconductor device that is formed with irregular pattern in its surface of the embodiment of the invention;
Fig. 6 shows the view of the second electrode lay that the edge at light emitting semiconductor device according to another embodiment of the present invention exposes;
Fig. 7 shows the cutaway view according to the semiconductor light emitting device packaging piece of further embodiment of this invention;
Fig. 8 shows the curve chart of the luminous efficiency and the relation between the current density of light-emitting area.
Embodiment
Now, will describe exemplary embodiment of the present invention in detail with reference to accompanying drawing.Yet the present invention can implement with a lot of different forms, should not be interpreted as the embodiment that is limited in this elaboration.On the contrary, it will be completely with complete in order to make the disclosure that these embodiment are provided, and scope of the present invention is conveyed to those skilled in the art fully.
Fig. 2 shows the perspective view according to the light emitting semiconductor device of exemplary embodiment of the present invention.Fig. 3 shows the plane graph of the light emitting semiconductor device shown in Fig. 2.Hereinafter, will describe with reference to Fig. 2 and Fig. 3
The semiconductor layer 113, the second electrode lay 120, first insulating barrier 130, first electrode layer 140 and the conductive substrate 150 that comprise semiconductor layer 111, active layer 112, second conduction type of first conduction type of sequential cascade according to the light emitting semiconductor device 100 of exemplary embodiment of the present invention.At this moment, the second electrode lay 120 has an exposed region at the interface between the semiconductor layer 113 of the second electrode lay 120 and second conduction type.First electrode layer 140 comprises at least one contact hole 141.Contact hole 141 is electrically connected to the semiconductor layer 111 of first conduction type; With semiconductor layer of second conduction type 113 and active layer 112 electric insulations, and extend at least a portion of the semiconductor layer 111 of first conduction type from a surface of first electrode layer 140.
In light emitting semiconductor device 100, the semiconductor layer 113 of the semiconductor layer 111 of first conduction type, active layer 112 and second conduction type is carried out the light emission.Hereinafter, they are known as luminous laminated construction (lamination) 110.That is, light emitting semiconductor device 100 comprises luminous laminated construction 110, first electrode layer 140 and first insulating barrier 130.First electrode layer 140 is electrically connected to the semiconductor layer 111 of first conduction type, and semiconductor layer 113, the first insulating barriers 130 that the second electrode lay 120 is electrically connected to second conduction type make electrode layer 120 and 140 electrically insulated from one another.In addition, conductive substrate 150 is comprised as the substrate that is used to grow or the substrate of support semiconductor luminescent device 100.
In the semiconductor layer 111 and 113 each can be formed by semiconductor, like GaN base semiconductor, zno-based semiconductor, GaAs base semiconductor, GaP base semiconductor and GaAsP base semiconductor.For example, can come extension (MBE) to form semiconductor layer through utilizing molecule.In addition, each in the semiconductor layer can be by like any formation the in the semiconductor of III-V semiconductor, II-VI semiconductor and Si.Consider conduction type, form each in semiconductor layer 111 and 113 through utilizing the above-mentioned semiconductor of suitable doping impurity.
Consider the performance of active layer 112, preferably, active layer 112 impurity that undopes.Can recently control wavelength of light emitted through the mole of adjustment composition.Therefore, according to the performance of active layer 112, light emitting semiconductor device 100 can be launched any light in infrared light, visible light and the UV light.
In order voltage to be applied to the semiconductor layer of identical conduction type, form in the electrode layer 120 and 140 each.Therefore, consider conductivity, electrode layer 120 and 140 can be formed by metal.That is, electrode layer 120 and 140 comprises the electrode that semiconductor layer 111 and 113 is electrically connected to the external current source (not shown).For example, electrode layer 120 and 140 can comprise as the Ti of n type electrode with as the Pd or the Au of p type electrode.
Preferably, the second electrode lay 120 reflections are from the light of active layer 112 generations.Because the second electrode lay 120 is positioned at active layer 112 belows, so the second electrode lay 120 is positioned at the opposite side of light emitting semiconductor device 100 based on the luminous direction of active layer 112.From active layer 112 to light that the second electrode lay 120 is advanced with the luminous direction in the opposite direction of light emitting semiconductor device 100 on, therefore, the light of advancing to the second electrode lay 120 needs by emission to improve luminous efficiency.Therefore, when the second electrode lay 120 had light reflectivity, the light of reflection was advanced to light-emitting area, thereby improved the luminous efficiency of light emitting semiconductor device 100.
In order to reflect the light that produces from active layer 112, preferably, the second electrode lay 120 is formed by the metal of show white in the visual ray zone.For example, white metal can be any metal among Ag, Al and the Pt.
The second electrode lay 120 comprises exposed region at the interface between the semiconductor layer 113 of the second electrode lay 120 and second conduction type.The lower surface of first electrode layer 140 contacts with conductive substrate 150, and first electrode layer 140 is electrically connected to external current source (illustrating) through conductive substrate 150.Yet the second electrode lay 120 needs independent join domain, to be connected to the external current source (not shown).Therefore, the second electrode lay 120 comprises the area exposed through partially-etched luminous laminated construction 110.
In Fig. 2, show the example of through hole 114.Center through the luminous laminated construction 110 of etching forms through hole 114 with the exposed region that forms the second electrode lay 120.On the exposed region of the second electrode lay 120, also can form electrode pad unit 160.The second electrode lay 120 can be electrically connected to the external power source (not shown) through its exposed region.At this moment, the second electrode lay 120 is electrically connected to the external power source (not shown) through utilizing electrode pad unit 160.The second electrode lay 120 can be electrically connected to the external current source (not shown) through electric wire etc.For the ease of being connected to external current source, preferably, the diameter of through hole increases from the semiconductor layer of the second electrode lay to first conduction type
Form through hole 114 through selective etch.Usually, only etching comprises semi-conductive luminous laminated construction 110, and not etching comprises the second electrode lay 120 of metal.Consider light-emitting area, electrical connection efficient and current expansion in the second electrode lay 120, those skilled in the art can suitably confirm the diameter of through hole 114.
When contact hole 141 only was used to be electrically connected, first electrode layer 140 can comprise a contact hole 141.Yet, evenly to expand for the electric current that makes the semiconductor layer 111 that is transferred to first conduction type, first electrode layer 140 can be included in a plurality of contact holes 141 in precalculated position.
When conductive substrate 150 is support base, can form conductive substrate 150 through utilizing electro-plating method or substrate associated methods.Specifically, the example that in light emitting semiconductor device 100, forms the method for conductive substrate 150 can comprise: electro-plating method forms plating seed layer to form substrate; The substrate associated methods prepares conductive substrate 150 individually, then through utilizing electroconductive binder (like Au, Au-Sn and Pb-Sr) to combine conductive substrate 150.
Fig. 3 shows the plane graph of light emitting semiconductor device 100.Through hole 114 is formed in the upper surface of light emitting semiconductor device 100, and electrode pad unit 160 is positioned at the exposed region place of the second electrode lay 120.In addition,,, contact hole 141 is depicted as dotted line, to show the position of contact hole 141 in order to show the position of contact hole 141 although not shown in the upper surface of light emitting semiconductor device 100.First insulating barrier 130 is extensible and around contact hole 141, makes contact hole 141 and the semiconductor layer 113 and active layer 112 electricity of the second electrode lay 120, second conduction type isolate.To be explained in more detail with reference to Fig. 4 B and Fig. 4 C.
Fig. 4 A shows the cutaway view of the light emitting semiconductor device shown in Fig. 3 of A-A ' intercepting along the line.Fig. 4 B shows the cutaway view of the light emitting semiconductor device shown in Fig. 3 of B-B intercepting along the line.Fig. 4 C shows the cutaway view of the light emitting semiconductor device shown in Fig. 3 of C-C ' intercepting along the line.Intercepting line A-A ' is to illustrate the cutaway view of light emitting semiconductor device 100.Intercepting line B-B ' is to illustrate the cutaway view that comprises contact hole 141 and through hole 114.Intercepting line C-C ' is to illustrate the cutaway view that only comprises contact hole 141.Hereinafter, will describe with reference to Fig. 4 A to Fig. 4 C.
With reference to Fig. 4 A, contact hole 141 both be not shown, through hole 114 is not shown yet.Because contact hole 141 is not to connect through independent connecting line, but be electrically connected, so at the not shown contact hole 141 of analysing and observe of Fig. 3 through first electrode layer 140.
With reference to Fig. 4 B and Fig. 4 C; Contact hole 141 extends to the inside of the semiconductor layer 111 of first conduction type from the interface between first electrode layer 140 and the second electrode lay 120; Contact hole 141 passes the semiconductor layer 113 and active layer 112 of second conduction type; And extending to the semiconductor layer 111 of first conduction type, contact hole 141 extends to the interface between the semiconductor layer 111 of the active layer 112 and first conduction type at least.Preferably, contact hole 141 extends to the part of the semiconductor layer 111 of first conduction type.Yet contact hole 141 is used for being electrically connected and current expansion.In case contact hole 141 contacts with the semiconductor layer 111 of first conduction type, contact hole 141 just need not extend to the outer surface of the semiconductor layer 111 of first conduction type.
In Fig. 4 B, formed the exposed region of the second electrode lay 120, thereby the second electrode lay 120 is electrically connected to the external current source (not shown).Electrode pad unit 160 can be positioned at the exposed region place.At this moment, second insulating barrier 170 can be formed on the inner surface of through hole 114, thus luminous laminated construction 110 and electrode pad unit 160 electricity isolation each other.
Shown in Fig. 4 A, owing to first electrode layer 140 is formed in the same plane with the second electrode lay 120, so light emitting semiconductor device 100 has the performance of horizontal light emitting semiconductor device.Shown in Fig. 4 B, owing to electrode pad unit 160 is formed on the surface of the second electrode lay 120, so light emitting semiconductor device 100 can have the performance of vertical light-emitting device.Therefore, light emitting semiconductor device 100 has had vertical stratification integrated and the structure of horizontal structure.
In Fig. 4 A to Fig. 4 C, the semiconductor layer 111 of first conduction type can be the n type semiconductor layer, and first electrode layer 140 can be n type electrode.In this case, the semiconductor layer 113 of second conduction type can be the p type semiconductor layer, and the second electrode lay 120 can be p type electrode.Therefore, but first electrode layer 140 that forms by n type electrode and utilize by the second electrode lay 120 that p type electrode forms and to place first insulating barrier, 130 electrically insulated from one another between them.
Fig. 5 shows according to the photoemissive view in the light emitting semiconductor device that is formed with irregular pattern in its surface of exemplary embodiment of the present invention, with the description of omitting the same components of having described.
In the light emitting semiconductor device 100 according to exemplary embodiment of the present invention, the semiconductor layer 111 of first conduction type is formed on the outermost edges on the direct of travel of light of emission.Therefore, can be prone to form from the teeth outwards irregular pattern 180 through utilizing known method (like photoetching process) visitor.In this case, pass the lip-deep irregular pattern 180 of the semiconductor layer 111 that is formed on first conduction type, the said light of outgoing then from the light of active layer 112 emission.Irregular pattern 180 makes light outgoing efficient improve.
Fig. 6 shows the view of the second electrode lay that exposes in the edge according to the light emitting semiconductor device of another exemplary embodiment of the present invention.
According to another exemplary embodiment of the present invention, a kind of method of making light emitting semiconductor device is provided.This method comprises: the semiconductor layer 213 of the semiconductor layer 211 of sequentially range upon range of first conduction type, active layer 212, second conduction type, the second electrode lay 220, insulating barrier 230, first electrode layer 240 and conductive substrate 250; The exposed region of formation at the interface between the semiconductor layer 213 of the second electrode lay 220 and second conduction type; In the semiconductor layer 213 of second conduction type, form at least one contact hole 241; Said contact hole 241 is electrically connected to the semiconductor layer 211 of first conduction type; With semiconductor layer of second conduction type 213 and active layer 212 electric insulations, and extend at least a portion of the semiconductor layer 211 of first conduction type from a surface of first electrode layer 240.
At this moment, can be through in luminous laminated construction 210 (with reference to Fig. 2), forming the exposed region that through hole 214 forms the second electrode lay 220.Selectively, as shown in Figure 6, can form the exposed region of the second electrode lay 220 through the luminous laminated construction 210 of mesa etch.In this embodiment, with the description of omitting to the assembly identical with the assembly of the embodiment that had described with reference to Fig. 2.
With reference to Fig. 6, an edge of mesa etch light emitting semiconductor device 200, this edge of light emitting semiconductor device 200 is etched with the second electrode lay at the interface 220 between the semiconductor layer 213 that is exposed to the second electrode lay 220 and second conduction type.The exposed region of the second electrode lay 220 is formed on this edge of light emitting semiconductor device 200; The process that forms exposed region in the edge of light emitting semiconductor device 200 is simpler than the process that in the above embodiments, forms through hole, and the former process also makes follow-up electrical connection process be easy to carry out.
Fig. 7 shows the cutaway view of semiconductor light emitting device packaging piece 300 according to still another embodiment of the invention; Semiconductor light emitting device packaging piece 300 comprises: semiconductor light emitting device packaging piece main body 360a, 360b and 360c have the upper surface that is formed with recess; The first lead frame 370a and the second lead frame 370b are installed to semiconductor light emitting device packaging piece main body 360a, 360b and 360c, are exposed to the lower surface place of said recess, and are spaced from each other predetermined distance; Light emitting semiconductor device 310 and 320 is installed to the first lead frame 370a.Light emitting semiconductor device 310 and 320 is the light emitting semiconductor devices that have through hole according to the heart therein of the exemplary embodiment of having described with reference to Fig. 2 of the present invention, with the description of omitting the same components of having described.
Light emitting semiconductor device 310 and 320 comprises luminescence unit 310 and conductive substrate 320, and luminescence unit 310 comprises first semiconductor layer, second semiconductor layer, active layer and electrode layer.Through hole is formed in the luminescence unit 310, and light emitting semiconductor device 310 and 320 also is included in the electrode pad unit 330 at exposed region place.Conductive substrate 320 is electrically connected to the first lead frame 370a, and electrode pad unit 330 is electrically connected to the second lead frame 370b through electric wire 340 grades.
Light emitting semiconductor device 310 and 320 is electrically connected to the second lead frame 370b through lead-in wire bonding 340, and wherein, light emitting semiconductor device 310 and 320 is not installed to the second lead frame 370b.Therefore, light emitting semiconductor device can obtain high luminous efficiency and have vertical stratification.As shown in Figure 7, light emitting semiconductor device is installed to lead frame 370a and is installed to lead frame 370b through the lead-in wire bonding through chip bonding (die bonding).Therefore, can carry out this process originally with low relatively one-tenth.
Fig. 8 shows the curve chart of the luminous efficiency and the relation between the current density of light-emitting area.When current density is about 10A/cm2 or when bigger, if current density is low, then luminous efficiency is high, if current density is high, then luminous efficiency is low.
Relation and light-emitting area between current density and the luminous efficiency are illustrated in the table 1 with numeral.
Table 1
With reference to Fig. 8 and table 1, along with the increase of light-emitting area, luminous efficiency improves.Yet in order to ensure light-emitting area, the area of distribution electrode need reduce, can reduce like this light-emitting area the current density light-emitting area current density reduce can deterioration the electric property of light emitting semiconductor device.
Yet according to embodiments of the invention, this problem can guarantee that current expansion solves through utilizing contact hole.Therefore, can prevent that wherein, said contact hole does not extend to the light-emitting area of current expansion, and is formed in wherein owing to the deterioration of the electric property that reduces to cause of current density through being utilized in the method that forms contact hole in the light emitting semiconductor device.Therefore, according to the current expansion of the light emitting semiconductor device carry out desired of the embodiment of the invention, and guarantee that maximum light-emitting area is to obtain the luminous efficiency of expectation.
As stated; According to exemplary embodiment of the present invention; The light that light emitting semiconductor device can prevent to launch is by electrode reflection or absorption; And through except the part of electrode, the electrode that below active layer, forms the semiconductor layer that is positioned at light emission direction is guaranteed maximum light-emitting area, thereby makes the luminous efficiency maximization.
In addition, in electrode, form at least one contact hole, carrying out current expansion reposefully, thereby the electrode with small size capable of using is carried out uniform current expansion.
In addition, owing to through hole is formed on the upper surface of light emitting semiconductor device, thus in the chip bonding process, do not need to arrange, and carry out the lead-in wire bonding easily.In addition, because light emitting semiconductor device has vertical stratification, can be so when the manufacturing and encapsulation part, can use together with the lead-in wire bonding and the chip bonding of low cost execution.Therefore, can realize large-scale production with low cost.
Therefore, according to embodiments of the invention, can realize having the large-scale production of high reliability and high-quality luminescent device with low cost.
Although combined exemplary embodiment to illustrate and described the present invention, it will be apparent to those skilled in the art, under the situation of the spirit and scope of the present invention that do not break away from the claim qualification, can make and revising and change.
Claims (17)
1. light emitting semiconductor device, said light emitting semiconductor device have semiconductor layer, the active layer of first conduction type of sequential cascade, semiconductor layer, the second electrode lay, insulating barrier, first electrode layer and the conductive substrate of second conduction type,
Wherein, the second electrode lay has an exposed region at the interface between the semiconductor layer of the second electrode lay and second conduction type,
First electrode layer comprises at least one contact hole; Said at least one contact hole is electrically connected to the semiconductor layer of first conduction type; With the semiconductor layer and the active layer electric insulation of second conduction type, and extend at least a portion of the semiconductor layer of first conduction type from a surface of first electrode layer.
2. light emitting semiconductor device according to claim 1, said light emitting semiconductor device also comprise the electrode pad unit at the exposed region place that is formed on the second electrode lay.
3. light emitting semiconductor device according to claim 1, wherein, the exposed region of the second electrode lay is the through hole area exposed of the semiconductor layer formation of the semiconductor layer, active layer and second conduction type that are passed first conduction type.
4. light emitting semiconductor device according to claim 3, wherein, the diameter of through hole is increasing from the direction of the second electrode lay to the semiconductor layer of first conduction type.
5. light emitting semiconductor device according to claim 3, wherein, insulating barrier is formed on the inner surface of through hole
6. light emitting semiconductor device according to claim 1, wherein, the exposed region of the second electrode lay is formed on the edge of light emitting semiconductor device.
7. light emitting semiconductor device according to claim 1, wherein, the light that the second electrode lay reflection produces from active layer.
8. light emitting semiconductor device according to claim 7, wherein, the second electrode lay comprises a kind of metal of from the group of being made up of Ag, Al and Pt, selecting.
9. light emitting semiconductor device according to claim 1, wherein, photonic crystal is formed on the surface of semiconductor layer of first conduction type.
10. light emitting semiconductor device according to claim 1, wherein, conductive substrate comprises a kind of metal of from the group of being made up of Au, Ni, Cu and W, selecting.
11. light emitting semiconductor device according to claim 1, wherein, conductive substrate comprises from the group that is made up of Si, Ge and GaAs, select a kind of.
12. a method of making light emitting semiconductor device said method comprising the steps of:
The semiconductor layer of the semiconductor layer of sequentially range upon range of first conduction type, active layer, second conduction type, the second electrode lay, insulating barrier, first electrode layer and conductive substrate;
The exposed region of formation at the interface between the semiconductor layer of the second electrode lay and second conduction type;
In first electrode layer, form at least one contact hole; Said contact hole is electrically connected to the semiconductor layer of first conduction type; With the semiconductor layer and the active layer electric insulation of second conduction type, and extend at least a portion of the semiconductor layer of first conduction type from a surface of first electrode layer.
13. method according to claim 12, wherein, the step that forms the exposed region of the second electrode lay comprises the semiconductor layer of semiconductor layer, active layer and second conduction type of mesa etch first conduction type.
14. method according to claim 12, wherein, conductive substrate forms through electro-plating method.
15. method according to claim 12, wherein, conductive substrate through the substrate associated methods by range upon range of
16. a semiconductor light emitting device packaging piece, said semiconductor light emitting device packaging piece comprises:
The semiconductor light emitting device packaging piece main body has the surperficial recess that forms above that;
First lead frame and second lead frame are installed to the semiconductor light emitting device packaging piece main body, are exposed to the lower surface place of said recess, and separate predetermined distance each other;
Light emitting semiconductor device is installed to first lead frame,
Wherein, said light emitting semiconductor device has semiconductor layer, the active layer of first conduction type of sequential cascade, semiconductor layer, the second electrode lay, insulating barrier, first electrode layer and the conductive substrate of second conduction type.
The second electrode lay has an exposed region at the interface between the semiconductor layer of the second electrode lay and second conduction type,
First electrode layer comprises at least one contact hole; Said at least one contact hole is electrically connected to the semiconductor layer of first conduction type; With the semiconductor layer and the active layer electric insulation of second conduction type, and extend at least a portion of the semiconductor layer of first conduction type from a surface of first electrode layer.
17. semiconductor light emitting device packaging piece according to claim 16, wherein, said light emitting semiconductor device also comprises the electrode pad unit at the exposed region place that is formed on the second electrode lay,
The electrode pad unit is electrically connected to second lead frame.
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| CN2009101185150A Division CN101820038B (en) | 2009-02-26 | 2009-02-26 | Semiconductor light emitting device, manufacture method and semiconductor light emitting device packaging piece |
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