CN102519968A - Defect detection device for mask plate - Google Patents
Defect detection device for mask plate Download PDFInfo
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- CN102519968A CN102519968A CN201110387737XA CN201110387737A CN102519968A CN 102519968 A CN102519968 A CN 102519968A CN 201110387737X A CN201110387737X A CN 201110387737XA CN 201110387737 A CN201110387737 A CN 201110387737A CN 102519968 A CN102519968 A CN 102519968A
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Abstract
The invention relates to a defect detection device for a mask plate, which comprises a light source projection device and a detection system. The light source projection device comprises a light source and a lens, the light source is used for emitting light beams which are projected onto the mask plate through the lens, and the detection system comprises a plurality of light strength detectors and used for measuring and calculating at least one of the reflectivity or the transmissivity of the light beam and comparing the reflectivity or the transmissivity of the light beam with established detection standard in advance. By means of the structure, the defect detection device for the mask plate can quickly and effectively detect haze deflects and subtle organic pollutants on the mask plate.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly, relate to a kind of mask plate defect detecting device.
Background technology
Using photomask to carry out in the process of silicon wafer photoetching, the ion in the environment forms attachment easily on mask plate, exposing light beam is impacted.After mask plate is by litho machine laser radiation certain hour, especially under the irradiation of 193nm or the following wavelength light source of 193nm, on mask plate, can generate so-called vaporific defective (haze) gradually.The ammonium sulfate compound is considered to topmost vaporific defective composition, and photomask cleans the residual ion in back and is considered to the main cause that vaporific defective produces.Vaporific defective (haze) is present on the mask plate can cause photomask defect, and then causes product percent of pass to reduce.Therefore, find the defective of mask plate timely, thereby preventing that defective mask plate from continuing to be used causes the product yield reduce to be very crucial.
To this, the light source that industry mask plate defect detecting device commonly used adopts is single wavelength laser or Halogen lamp LED, relies on the mode (Die to Die or Die to Database) of repetition comparison and detection to carry out the mask plate defect test.This kind method is very consuming time and be difficult to find the trickle organic pollutants on the mask plate.
Summary of the invention
The object of the present invention is to provide the mask plate defect detecting device of a kind of effective detection haze defective and trickle organic pollutants.
For realizing above-mentioned purpose, technical scheme of the present invention is following:
A kind of mask plate defect detecting device comprises: light source projection device, comprise light source and lens, this light source be used to send light beam and through lens projects to mask plate; Detection system comprises a plurality of light intensity detectors, is used for calculating mask plate to the reflectivity of this light beam and at least one of transmissivity, and makes comparisons with the detection reference of setting up in advance.
A kind of preferred version as the above-mentioned mask plate defect detecting device of the present invention: this light intensity detector is three; Be respectively first, second, third light intensity detector; This light source projection device also comprises a spectroscope, is positioned on this light beam input path, and this spectroscope is told a part with light beam; First light intensity detector is positioned at this spectroscope to be told on the light path of light beam, and second, third light intensity detector lays respectively at the remainder light beam and incides on the reflected light path and transmitted light path behind the mask plate.
A kind of preferred version as the above-mentioned mask plate defect detecting device of the present invention: the light source in the light source projection device is the laser that tunable laser is sent.
Further improvement as the above-mentioned mask plate defect detecting device of the present invention: the optical maser wavelength that this tunable laser is sent is 157nm, 193nm, 248nm or 257nm.
Because defect area is different from area free from defect for the reflectivity and the transmissivity of light beams of different wavelengths on the mask plate; When the light beams of different wavelengths of sending when LASER Light Source or Halogen lamp LED projects on the mask plate; The mask plate defect detecting device of employing said structure calculates the reflectivity or the transmissivity of this light beam; And, can fast and effeciently find vaporific defective, and trickle organic pollutants are had good recall rate through contrasting with the detection reference of setting up in advance.
Description of drawings
Fig. 1 is a mask plate defect detecting device structural representation of the present invention;
Fig. 2 is the structural representation of calibration mask plate of the present invention.
Embodiment
Below in conjunction with accompanying drawing, specific embodiments of the invention is done further to specify.
A kind of mask plate defect detecting device disclosed by the invention is as shown in Figure 1, is used to detect defective possible on the mask plate 10, comprises light source projection device and detection system; Light source projection device specifically comprises light source 11, lens 12 and spectroscope 13; Detection system comprises three light intensity detectors 14,15,16, is respectively applied for light beam that detection light source sends incident intensity, reflective light intensity and the transmitted light intensity with respect to mask plate.This pick-up unit also comprises a spectroscope 13; Be positioned on the input path of this light beam; This spectroscope 13 is told a part with light beam; Said first light intensity detector 14 is positioned at this spectroscope to be told on the light path of light beam, and said second, third light intensity detector 15,16 lays respectively on the reflected light path and transmitted light path of remainder light beam with respect to mask plate 10.
The light beam that light source 11 sends is through behind the lens 12; Punish into two parts at spectroscope 13, a part of beam steering light intensity detector 14, remainder light beam incide on the mask plate 10 to be measured; This incident beam is through the reflection and the transmission of mask plate 10 to be measured; Produce folded light beam and transmitted light beam, the light intensity of folded light beam is detected by light intensity detector 15, and the light intensity of transmitted light beam is detected by light intensity detector 16.And then calculate the reflectivity and the transmissivity of 10 pairs of incident beams of mask plate to be measured, and reflectivity is the ratio of folded light beam light intensity and incident beam light intensity, transmissivity is the ratio of transmitted light beam light intensity and incident beam light intensity.Need to prove, the light intensity of the incident intensity that light intensity detector 14 records for telling from spectroscope 13, itself and original incident intensity (promptly without the incident intensity of crossing spectroscope 13) have constant proportionate relationship.
According to one embodiment of the present invention, light source projection device also comprises an incident angle governor motion, is used to regulate the incident angle of light beam.When the incident angle of light beam changed, its reflective light intensity, transmitted light intensity all can correspondingly change, and then mask plate also changes to the reflectivity and the transmissivity of light beam.
According to another embodiment of the invention, according to preferred embodiments of the present invention, light source 11 is a tunable laser, sends wavelength variable laser beam, and the laser beam wavelength that tunable laser is sent is 157nm, 193nm, 248nm or 257nm.
According to another embodiment of the invention, light source 11 is a halogen light source, and it is 120nm to 800nm that the light beam that sends can be adjusted wavelength coverage through optical filter.
When utilizing mask plate defect detecting device of the present invention to detect mask plate defective to be measured, at first need adopt calibration mask plate 20 to carry out calibration testing.As shown in Figure 2, this mask plate has the graphics field 21 of a plurality of different penetrabilitys, and the variation range of penetrability is 0%-100% (light tight, the 100% expression full impregnated light of 0% expression).Graphics field 21 can be processed according to the different proportion of gap width and chromium line thickness by gap between the crome metal lines and crome metal lines.Project on a plurality of graphics fields 21 with different penetrabilitys with light beams of different wavelengths; Carry out calibration testing; Under the situation of different wave length light beam projection, calculate reflectivity, the transmissivity of the 21 pairs of light beams in graphics field of different penetrabilitys, and set up benchmark database with this.Wherein reflectivity is the ratio of reflective light intensity and incident intensity, and transmissivity is the ratio of transmitted light intensity and incident intensity, reflective light intensity by light intensity detector 15 record, transmitted light intensity by light intensity detector 16 record, incident intensity records by light intensity detector 14.Need to prove, the light intensity of the incident intensity that light intensity detector 14 records for telling from spectroscope 13, itself and original incident intensity (promptly without the incident intensity of crossing spectroscope 13) have constant proportionate relationship.
Under identical test environment, go into directive calibration mask plate 20 with light beams of different wavelengths with fixing angle, when big, the reflectivity of 20 pairs of incident beams of calibration mask plate can reduce the wavelength of light beam from little change, and transmissivity can increase.
From benchmark database, can finding tunable laser at least, to send wavelength be that the laser beam of 157nm, 193nm, 248nm or 257nm projects 20 last times of calibration mask plate, the reflectivity and the transmissivity of the 21 pairs of laser beams in zone of a plurality of different penetrabilitys of calibration mask plate 20.With reference to above-mentioned way;, wavelength chooses some intermediate value wavelength in being the scope of 120nm to 800nm; Send the light beam of this intermediate value wavelength with halogen light source, again calibration mask plate 20 is carried out calibration testing, and reflectivity, transmisivity data are deposited in the said reference database.
According to information such as semiconductor process techniques grade, technology node, design rules, further make the calibration mask plate of multiple various criterion, carry out above-mentioned calibration testing again, and data are also deposited in the benchmark database.
Next, when detecting the defective of mask plate 10 to be measured, specifically comprise the steps:
A): industrial grade, technology node, the design rule of confirming mask plate 10 to be measured;
B): analyze the penetrability distributed intelligence in the different graphic zone of mask plate 10 to be measured with conventional electrical Autocad (such as EDA);
C): according to the penetrability distributed intelligence in above-mentioned different graphic zone, and the industrial grade information of mask plate to be measured 10 etc., from benchmark database, extract relevant reference data, synthesize the contrast benchmark of this detection according to the set of layouts of mask plate 10 to be measured;
D): adopt light beams of different wavelengths to project on the mask plate 10 to be measured, calculate reflectivity, the transmissivity information of the graphics field of different penetrabilitys respectively;
E): the contrast benchmark of reflectivity and transmissivity information and this detection is compared, satisfy decision rule, can think to have defective here if find the difference of reflectivity or transmissivity;
F):, defective is classified with the defective position if there is defective; Whether is critical defect with defect coordinate position and the stack of mask plate to be measured 10 design layout with definite this place, if then stop using this mask plate 10 to be measured and deliver cleaning.
According to one embodiment of present invention, decision rule recited above is specially:
A) in 180nm and above technology thereof, if mask plate to be measured to the difference of this beam reflection rate or refractive index and reference data more than or equal to 0.1%, then there is defective in judgement;
B) in the 130nm technology, if mask plate to be measured to the difference of this beam reflection rate or refractive index and reference data more than or equal to 1%, then there is defective in judgement;
C) in the 90nm technology,, the difference of reflectivity or refractive index and reference data has defective if more than or equal to 3%, then judging;
D) in the 65nm technology,, the difference of reflectivity or refractive index and reference data has defective if more than or equal to 10%, then judging;
E) in the 45nm technology,, the difference of reflectivity or refractive index and reference data has defective if more than or equal to 15%, then judging;
F) in 32nm and following technology thereof,, the difference of reflectivity or refractive index and reference data has defective if more than or equal to 30%, then judging.
Because the difference of technology node, layout design, testing environment judges that the condition of defective existence need further be optimized based on actual conditions.
Adopt mask plate defect detecting device of the present invention, can in the mask plate defects detection, reduce the degree of manual intervention, fast and effeciently find vaporific defective, and trickle organic pollutants are had good recall rate.
The above-described the preferred embodiments of the present invention that are merely; Said embodiment is not in order to limit scope of patent protection of the present invention; Therefore the equivalent structure done of every utilization instructions of the present invention and accompanying drawing content changes, and in like manner all should be included in protection scope of the present invention.
Claims (7)
1. mask plate defect detecting device comprises:
Light source projection device comprises light source and lens, this light source be used to send light beam and through lens projects to mask plate;
Detection system comprises a plurality of light intensity detectors, is used for calculating mask plate to the reflectivity of this light beam and at least one of transmissivity, and makes comparisons with the detection reference of setting up in advance.
2. mask plate defect detecting device as claimed in claim 1; It is characterized in that; Said light intensity detector is three, is respectively first, second, third light intensity detector, and said light source projection device also comprises a spectroscope; Be positioned on this light beam input path; This spectroscope is told a part with light beam, and said first light intensity detector is positioned at this spectroscope to be told on the light path of light beam, and said second, third light intensity detector lays respectively at the remainder light beam and incides on the reflected light path and transmitted light path behind the mask plate.
3. like each described mask plate defect detecting device in the claim 1 to 2, it is characterized in that said light source projection device also comprises an incident angle governor motion, be used to regulate the incident angle of light beam.
4. mask plate defect detecting device as claimed in claim 1 is characterized in that, said light source is the laser that tunable laser is sent.
5. mask plate defect detecting device as claimed in claim 4 is characterized in that, the optical maser wavelength that said tunable laser is sent is 157nm, 193nm, 248nm or 257nm.
6. mask plate defect detecting device as claimed in claim 1 is characterized in that, said light source is a halogen light source.
7. mask plate defect detecting device as claimed in claim 6 is characterized in that, the light beam that said halogen light source sends is 120nm to 800nm through optical filter adjustment wavelength coverage.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110387737XA CN102519968A (en) | 2011-11-28 | 2011-11-28 | Defect detection device for mask plate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110387737XA CN102519968A (en) | 2011-11-28 | 2011-11-28 | Defect detection device for mask plate |
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| CN102519968A true CN102519968A (en) | 2012-06-27 |
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| CN103728318A (en) * | 2013-12-31 | 2014-04-16 | 深圳市金立通信设备有限公司 | Method, device and terminal for detecting cleanliness of screen |
| CN107884318A (en) * | 2016-09-30 | 2018-04-06 | 上海微电子装备（集团）股份有限公司 | A kind of flat board granule detecting method |
| CN109297686A (en) * | 2018-11-16 | 2019-02-01 | 京东方科技集团股份有限公司 | Figure line width measuring method and system, data processing equipment |
| CN109564085A (en) * | 2016-09-07 | 2019-04-02 | 株式会社斯巴鲁 | Damage detection system and damage detecting method |
| CN111324007A (en) * | 2020-03-26 | 2020-06-23 | 武汉华星光电半导体显示技术有限公司 | Automatic optical detector for mask plate |
| CN111610197A (en) * | 2020-06-01 | 2020-09-01 | 上海御微半导体技术有限公司 | Defect detection device and defect detection method |
| CN113050364A (en) * | 2019-12-27 | 2021-06-29 | 中芯国际集成电路制造(上海)有限公司 | Optimization method of optical model and optical proximity correction method |
| CN113325004A (en) * | 2021-07-07 | 2021-08-31 | 上海超硅半导体股份有限公司 | Method and device for detecting surface defects of semiconductor wafer |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103728318A (en) * | 2013-12-31 | 2014-04-16 | 深圳市金立通信设备有限公司 | Method, device and terminal for detecting cleanliness of screen |
| CN109564085A (en) * | 2016-09-07 | 2019-04-02 | 株式会社斯巴鲁 | Damage detection system and damage detecting method |
| US10451560B2 (en) | 2016-09-07 | 2019-10-22 | Subaru Corporation | Damage detection system and damage detection method |
| CN107884318A (en) * | 2016-09-30 | 2018-04-06 | 上海微电子装备（集团）股份有限公司 | A kind of flat board granule detecting method |
| CN107884318B (en) * | 2016-09-30 | 2020-04-10 | 上海微电子装备（集团）股份有限公司 | Flat plate granularity detection method |
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| CN109297686A (en) * | 2018-11-16 | 2019-02-01 | 京东方科技集团股份有限公司 | Figure line width measuring method and system, data processing equipment |
| CN113050364A (en) * | 2019-12-27 | 2021-06-29 | 中芯国际集成电路制造(上海)有限公司 | Optimization method of optical model and optical proximity correction method |
| CN111324007A (en) * | 2020-03-26 | 2020-06-23 | 武汉华星光电半导体显示技术有限公司 | Automatic optical detector for mask plate |
| CN111610197A (en) * | 2020-06-01 | 2020-09-01 | 上海御微半导体技术有限公司 | Defect detection device and defect detection method |
| CN111610197B (en) * | 2020-06-01 | 2023-09-12 | 上海御微半导体技术有限公司 | Defect detection device and defect detection method |
| CN113325004A (en) * | 2021-07-07 | 2021-08-31 | 上海超硅半导体股份有限公司 | Method and device for detecting surface defects of semiconductor wafer |
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Application publication date: 20120627 |