CN102509735A - Amorphous indium zinc oxide/indium oxide nanocrystalline homogeneous composite thin film transistor and preparation method thereof - Google Patents
Amorphous indium zinc oxide/indium oxide nanocrystalline homogeneous composite thin film transistor and preparation method thereof Download PDFInfo
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- CN102509735A CN102509735A CN2011104435013A CN201110443501A CN102509735A CN 102509735 A CN102509735 A CN 102509735A CN 2011104435013 A CN2011104435013 A CN 2011104435013A CN 201110443501 A CN201110443501 A CN 201110443501A CN 102509735 A CN102509735 A CN 102509735A
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- indium
- indium oxide
- oxide
- zinc oxide
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Abstract
The invention provides an amorphous indium zinc oxide/indium oxide nanocrystalline homogeneous composite thin film transistor, which takes an amorphous indium zinc oxide/indium oxide nanocrystalline homogeneous composite thin film as a semiconductor channel layer. In the composite thin film, the composite molar ratio of nano indium oxide to indium zinc oxide is 0.5 to 1 percent. A preparation method comprises the following steps of: adding 0.5 to 1 molar percent of indium oxide nanoparticles into an indium salt-zinc salt composite colloidal solution; preparing a high-performance indium zinc oxide thin film by performing spin coating and sintering; and performing micro-nano machining such as photoetching, etching, secondary photoetching and the evaporation and stripping of electrodes to prepare the composite thin film field effect transistor. Process conditions are controlled, so that the obtained field effect transistor has high mobility and high transmission of light. The preparation method is low in cost, and large-scale production can be realized.
Description
Technical field
The present invention relates to the method for homojunction combined thin-film transistor of a kind of amorphous indium zinc oxide/indium oxide nanocrystalline and preparation thereof, belong to nano material and field of nanometer devices.
Background technology
Arrival along with the information age; Display device (LCD), Electronic Paper are just being quickened to develop to the direction of panelized, energy-conservationization, are that the active array driving display spare of switch element becomes the outstanding person in numerous flat panel displays with thin-film transistor (TFT) wherein.TFT is a kind of field-effect semiconductor device, comprises several important such as substrate, semiconductor channel layer, insulating barrier, grid and source-drain electrode, and wherein semiconductor channel layer is most important to device performance.
At present, for TFT-LCD, semiconductor channel layer wherein mainly adopt amorphous silicon (
a-Si) and polycrystalline SiTFT (
p-Si).
aThe TFT-LCD of-Si system has characteristics such as preparation technology is simple, leakage current is little, becomes a kind of display device that present application is the widest, with fastest developing speed, technology is the most ripe.But along with LCD develops towards high definition and big capacity of display direction, and pixel element size is more and more littler, in order to guarantee sufficiently high aperture opening ratio, requires the size of TFT littler.Simultaneously, because the increase of picture element density, the charging interval of unit pixel is shorter, and the mobility that improves TFT just seems rather important.Yet,
aThe mobility of-Si material～1 cm
2/ Vs and doping efficiency are lower, can not satisfy the requirement of small size, high charge ability TFT.In addition
a-Si material has very strong photoelectric effect, can reduce the OFF resistance of TFT, influences the charge storage characteristic of liquid crystal pixel.Exactly because
aThere are the problems referred to above in-Si thin-film transistor, and the nineties later stage, people arrived diversion
p-Si material, this be because
pThe carrier mobility ratio of-Si
aHigh 1～2 order of magnitude of-Si.This just makes
p-Si is that the response speed of TFT is fast, and the view data writing speed is fast.But, at present
pThere are two problems in the TFT of-Si system: the one, and the off-state current of TFT is bigger; The 2nd, the low temperature large-area preparation of high mobility polycrystalline silicon material is difficulty.Therefore people seek performance excellent material system more constantly.
Simultaneously, organic EL Display Technique also is current scientific and technological circle and the generally good a kind of up-and-coming Display Technique of industrial circle.But also there is the phenomenon of being blocked by Si-TFT of major part (70%-90%) light that sends in Si-TFT-OLED.And the brightness of OLED is directly proportional with its injection current, thus in order to improve its display brightness, need to increase injection current, however the electric current increase can cause heating to increase, and causes component failure to quicken.
So researcher has been transferred to SWCN and Graphene with sight; They have very outstanding characteristic of semiconductor; Such as high carrier mobility, but the arrangement of CNT and problems such as metal semiconductor separation itself that possess are difficult to overcome.And for Graphene, though mobility is higher, because grapheme material itself do not have band gap, the corresponding devices switch of developing lower than all (< 10).Simultaneously, the doping techniques of Graphene does not solve fully yet, is not suitable for doing the logic switch device.
Therefore in order to solve above problem, on the compatible with it flexible substrates of exploitation at a high speed, stabilization of semiconductor TFT switch arrays become one of current active demand.As the TFT material, transparent oxide semiconductor (TCO) receives attracting attention of researcher and display screen production firm.In the amorphous oxide semiconductor of current research; Conduction band mainly is made up of the metal cation long radius s track of spherical symmetric; Adjacent orbit produces bigger overlapping; For the transmission of electronics has formed passage, so just do not receive the influence of non crystalline structure, make the amorphous oxide semiconductor material have bigger carrier mobility.Therefore TCO-TFT compares non-crystalline silicon tft owing to have that high electron mobility, high electricity are led, growth temperature is low and high light transmittance has become one of current research focus.For flexible display device, but amorphous state transparent oxide TFT because have normal temperature growth, film is highly polished, stress is low, compatibility is good and the advantage of large area deposition possibly become the preferred material of the demonstration of flexible flat from now on TFT driving switch array.
As everyone knows, indium oxide (In
2O
3) be a kind of N type semiconductor material of broad stopband; Direct band gap is 3.55-3.75eV; Indirect band gap is 2.6 eV, has higher mobility, surpasses 90% in the transmitance of visible-range; These character have a good application prospect indium oxide, like solar cell, photoelectric device, thin-film transistor and transducer etc.Zinc oxide (ZnO) has the characteristic of N type semiconductor, and band gap is about 3.3 eV, uses aluminium, gallium, indium grade in an imperial examination III major element or halogens such as chlorine, iodine can regulate its N type semiconductor performance.High band gap be zinc oxide bring puncture voltage high, keep that the electric field ability is strong, electronic noise is little, can bear the power advantages of higher.
And single sull can not provide high mobility and light transmittance, can not controlledly modulate, so In has just been arranged
2O
3The nano thin-film structure of the two dimension of-ZnO (IZO), but this coenosarc can realize charge carrier high mobility and modularity.IZO also has high light transmittance and high conductivity simultaneously; Also can be used as flat-panel monitor and solar cell; Become one of selection of awfully hot at present thin-film transistor technologies (TFT); But the mobility of current this thin-film transistor is very low, so we have adopted compound Homogenotic nanometer indium oxide particle, to reach the purpose that its mobility improves.
Summary of the invention
Problem to be solved by this invention provides thin-film transistor of a kind of high carrier mobility and preparation method thereof.
In order to address the above problem; High performance thin film transistor provided by the present invention; With the homojunction combined film of amorphous indium zinc oxide/indium oxide nanocrystalline is semiconductor channel layer, and in laminated film, the compound nano indium oxide and the mol ratio of indium zinc oxide are 0.5%～1%.
The transistorized preparation method of above-mentioned high performance thin film is:
Nano indium oxide particle and indium zinc oxide are carried out compound, obtain the homojunction combined film of amorphous indium zinc oxide/indium oxide nanocrystalline, and, obtain high-performance laminated film field-effect transistor through transistor fabrication as semiconductor channel layer.
Concrete scheme is:
1) with the indium oxide nano particle ultrasonic be scattered in the organic solvent for use as mother liquor; Four nitric hydrate indiums and the Zinc diacetate dihydrate of mol ratio 1:1 are dissolved in the EGME; Solution is designated as A, and adds monoethanolamine as stabilizer according to the molar concentration rate of monoethanolamine: indium=10:1;
2) in solution A, add the mother liquor and the ultrasonic dispersion of finely dispersed nano indium oxide particle, make that the indium oxide particle is In (NO among the A
3)
34H
2O and C
4H
6O
4Zn2H
20.5%～1% of the total mole of O; Be spun on then on the substrate, the spin coating of oven dry continued is until reaching thickness;
3) thermal annealing in atmosphere promptly obtains IZO/In
2O
3The NCs composite film material;
4) utilize ultraviolet photolithographic technology,, utilize wet etching that laminated film is etched into fritter, then through photo etched mask, Ti/Al electrode vapor deposition for the second time and peel off and to obtain IZO/In through the mask first time
2O
3NCs laminated film transistor.
In the such scheme, the nano indium oxide particle is scattered in the organic solvent according to suitable mol ratio is ultrasonic, and it is for use as mother liquor that it is evenly suspended.Four nitric hydrate indiums and Zinc diacetate dihydrate are dissolved in the EGME according to the molar concentration rate of 1:1, continue to stir, and add the mother liquor of a certain amount of indium oxide particle and continue ultrasonic dispersion, the composite colloid solution that obtains disperseing.Being spun on then grows in advance has on the substrate of insulating barrier, and organic solvent is removed in baking again, then continues the repetition spin coating, up to reaching desired thickness.In the laminated film that obtains, the indium oxide particle is In (NO
3)
34H
2O and C
4H
6O
4Zn2H
20.5%～1% of the total mole of O.
The present invention is a basic material with the IZO noncrystal membrane, and the indium oxide nano particle in the compound a spot of crystallization in film the inside utilizes the indium oxide high carrier mobility, improves the mobility of amorphous IZO film.As semiconductor channel layer, pass through the homojunction combined thin-film transistor of amorphous indium zinc oxide/indium oxide nanocrystalline that transistor fabrication obtains high high mobility and has transparency with this laminated film.
By the homojunction combined thin-film transistor of the prepared amorphous indium zinc oxide/indium oxide nanocrystalline of the inventive method, be that carrier mobility is up to 30cm
2/ Vs, light transmittance are greater than 80% high performance thin film transistor.
Preparation method of the present invention directly adopts sol-gal process, but technology is simple, low to requirement for experiment condition, controllable degree is high, large tracts of land with low cost is produced in batches and repeatability is high and meet environmental requirement.
Description of drawings
The appearance structure of doping film material not among Fig. 1: the embodiment 1.
Fig. 2: the appearance structure of the used nano indium oxide particle that mixes.
Fig. 3: the film UV, visible light light transmission of the indium oxide nano particle of doping 0% and 1% characterizes.
Fig. 4: the electric property curve chart of the TFT of the 0% indium oxide nano particle that mixes.
Fig. 5: the electric property curve chart of the TFT of the 0.5% indium oxide nano particle that mixes.
Fig. 6: the electric property curve chart of the TFT of the 1% indium oxide nano particle that mixes.
Embodiment
Embodiment 1:
Four nitric hydrate indiums and the 0.165 g Zinc diacetate dihydrate of 0.285 g are dissolved in the EGME of 25 ml, and add 0.46 ml monoethanolamine, stir 3 h, growth is in advance had the thick SiO of 300 nm as stabilizer
2The P type Si sheet of insulating barrier carries out ultrasonic cleaning; Utilize spin coater to carry out spin coating then with the rotating speed of 2000 rpm; Then in atmosphere 200 ℃ the baking 10 min after; This step repeats twice and obtains the thick laminated film of 60 nm, and 400 ℃ of thermal annealing 30 min obtain the IZO thin-film material in atmosphere at last; (2) utilize the ultraviolet photolithographic technology; Through the mask first time; After utilizing wet etching (watery hydrochloric acid of 10 wt%) 2 min divided thin film is slit into the fritter that the area size is 1 mm * 1 mm, to reduce introducing parasitic capacitance and leakage current in the transistor preparation process.Then through photo etched mask for the second time, utilize electron beam evaporation to prepare the Ti/Al electrode and peel off can to obtain the IZO TFT.The AFM photo is seen accompanying drawing 1; The electric property curve is seen accompanying drawing 4 (a) and (b), and its original thin film field-effect mobility is 1.9 cm
2/ Vs.
Embodiment 2:
(1) with 0.0013 mg indium oxide nano particle ultrasonic dissolution in the EGME of 25mL, it is for use as mother liquor that ultrasonic 4 h evenly suspend it.Four nitric hydrate indiums and 0.165 g Zinc diacetate dihydrate with 0.285 g is dissolved in the EGME of 25ml then; And add 0.46 ml monoethanolamine as stabilizer; Stir 3h; The mother liquor and ultrasonic dispersion 30 min that add the indium oxide nano particle of 25ml, being spun in advance with the rotating speed of 2000rpm then, growth has the thick SiO of 300 nm
2On the insulating barrier, then in atmosphere behind 200 ℃ of baking 10 min, and repeat repeatedly, obtain the thick laminated film of 60 nm, 400 ℃ of thermal annealing 30 min obtain IZO/In in atmosphere at last
2O
3The NCs composite film material; (2) utilize the ultraviolet photolithographic technology; Through the mask first time; After utilizing wet etching (watery hydrochloric acid of 10wt % is as etching agent) 2 min divided thin film is slit into the fritter that the area size is 1 mm * 1 mm, to reduce introducing parasitic capacitance and leakage current in the transistor preparation process.Follow the process photo etched mask second time, utilize electron beam evaporation to prepare the Ti/Al electrode and peel off the IZO/ In that can obtain high electron mobility
2O
3NCs laminated film transistor.(3) In
2O
3The electrology characteristic curve of field-effect transistor during doping content 0.5 % (see accompanying drawing 5 (a) and (b)), the field-effect mobility of laminated film field-effect transistor is 26 cm
2/ Vs.
Embodiment 3:
(1) with 0.0026 mg indium oxide nano particle ultrasonic dissolution in the EGME of 25mL, it is for use as mother liquor that ultrasonic 4 h evenly suspend it.Four nitric hydrate indiums and 0.165 g Zinc diacetate dihydrate with 0.285 g is dissolved in the EGME of 25ml then; And add 0.46 ml monoethanolamine as stabilizer; Prepare many parts and stir 3h; The mother liquor and ultrasonic dispersion 30 min that add the indium oxide nano particle of 25ml, being spun in advance with the rotating speed of 2000rpm then, growth has the thick SiO of 300 nm
2On the insulating barrier, then in atmosphere behind 200 ℃ of baking 10 min, and repeat repeatedly, obtain the thick laminated film of 60 nm, 400 ℃ of thermal annealing 30 min obtain IZO/ In in atmosphere at last
2O
3The NCs composite film material; (2) utilize the ultraviolet photolithographic technology; Through the mask first time; After utilizing wet etching (watery hydrochloric acid of 10wt % is as etching agent) 2 min divided thin film is slit into the fritter that the area size is 1 mm * 1 mm, to reduce introducing parasitic capacitance and leakage current in the transistor preparation process.Follow the process photo etched mask second time, utilize electron beam evaporation to prepare the Ti/Al electrode and peel off the IZO/ In that can obtain high electron mobility
2O
3NCs laminated film transistor.(3) In that do not mix
2O
3Glass with mix 1% In
2O
3The ultraviolet light visible transmission curve of glass see accompanying drawing 3; In
2O
3The electrology characteristic curve of field-effect transistor during doping content 1 % (see accompanying drawing 6 (a) and (b)), its field-effect mobility is 31 cm
2/ Vs.This shows, through mixing the nano indium oxide particle in 0.5% to 1% scope, its IZO/In
2O
3The transistorized field-effect mobility of NCs laminated film has obtained significantly improving.
Claims (4)
1. homojunction combined thin-film transistor of amorphous indium zinc oxide/indium oxide nanocrystalline; It is characterized in that; With the homojunction combined film of amorphous indium zinc oxide/indium oxide nanocrystalline is semiconductor channel layer, and in laminated film, the compound nano indium oxide and the mol ratio of indium zinc oxide are 0.5%～1%.
2. the preparation method of the said homojunction combined thin-film transistor of claim 1 is characterized in that, comprises the steps:
1) with the indium oxide nano particle ultrasonic be scattered in the organic solvent for use as mother liquor; Four nitric hydrate indiums and the Zinc diacetate dihydrate of mol ratio 1:1 are dissolved in the EGME; Solution is designated as A, and adds monoethanolamine as stabilizer according to the molar concentration rate of monoethanolamine: indium=10:1;
2) in solution A, add the mother liquor and the ultrasonic dispersion of finely dispersed nano indium oxide particle, make that the indium oxide particle is In (NO among the A
3)
34H
2O and C
4H
6O
4Zn2H
20.5%～1% of the total mole of O; Be spun on then on the substrate, the spin coating of oven dry continued is until reaching thickness;
3) thermal annealing in atmosphere promptly obtains IZO/In
2O
3The NCs composite film material;
4) utilize ultraviolet photolithographic technology,, utilize wet etching that laminated film is etched into fritter, then through photo etched mask, Ti/Al electrode vapor deposition for the second time and peel off and to obtain IZO/In through the mask first time
2O
3NCs laminated film transistor.
3. preparation method according to claim 2 is characterized in that, is scattered in the EGME as mother liquor the indium oxide nano particle is ultrasonic.
4. preparation method according to claim 2 is characterized in that, through 400 ℃ of thermal annealing 30min in atmospheric environment, obtains the homojunction combined film of amorphous indium zinc oxide/indium oxide nanocrystalline.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070184576A1 (en) * | 2005-11-29 | 2007-08-09 | Oregon State University | Solution deposition of inorganic materials and electronic devices made comprising the inorganic materials |
| CN101044625A (en) * | 2004-10-22 | 2007-09-26 | 惠普开发有限公司 | Method of forming a solution processed transistor having a multilayer dielectric |
| CN101309863A (en) * | 2005-11-18 | 2008-11-19 | 出光兴产株式会社 | Semiconductor thin film, method for manufacturing the same, thin film transistor, and active matrix display panel |
| US20100117085A1 (en) * | 2007-04-25 | 2010-05-13 | Jung-Hyoung Lee | Thin film transistor and method for preparing the same |
| US20110017990A1 (en) * | 2009-07-24 | 2011-01-27 | Son Kyoung-Seok | Thin-film transistor and method of manufacturing the same |
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- 2011-12-27 CN CN 201110443501 patent/CN102509735B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101044625A (en) * | 2004-10-22 | 2007-09-26 | 惠普开发有限公司 | Method of forming a solution processed transistor having a multilayer dielectric |
| CN101309863A (en) * | 2005-11-18 | 2008-11-19 | 出光兴产株式会社 | Semiconductor thin film, method for manufacturing the same, thin film transistor, and active matrix display panel |
| US20070184576A1 (en) * | 2005-11-29 | 2007-08-09 | Oregon State University | Solution deposition of inorganic materials and electronic devices made comprising the inorganic materials |
| US20100117085A1 (en) * | 2007-04-25 | 2010-05-13 | Jung-Hyoung Lee | Thin film transistor and method for preparing the same |
| US20110017990A1 (en) * | 2009-07-24 | 2011-01-27 | Son Kyoung-Seok | Thin-film transistor and method of manufacturing the same |
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