CN102509700A - Molecular beam epitaxial growth method of InAs/GaAsSb quantum dots - Google Patents
Molecular beam epitaxial growth method of InAs/GaAsSb quantum dots Download PDFInfo
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- CN102509700A CN102509700A CN2011104334667A CN201110433466A CN102509700A CN 102509700 A CN102509700 A CN 102509700A CN 2011104334667 A CN2011104334667 A CN 2011104334667A CN 201110433466 A CN201110433466 A CN 201110433466A CN 102509700 A CN102509700 A CN 102509700A
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Abstract
The invention discloses a molecular beam epitaxial growth method of InAs/GaAsSb quantum dots, belonging to the field of the preparation technology of photoelectric devices. The method comprises the following steps of: firstly preparing a GaAsSb alloy thin layer with low antimony content; and then preparing stress self-assembly GaAs-based InAs/GaAsSb quantum dots by use of the molecular beam epitaxial growth technology for growing InAs quantum dots. In the method, the growth process is determined by thermodynamic parameters, the prepared GaAsSb alloy suffers little influence of technological conditions, the components are easy to control, controllable-density InAs/GaAsSb quantum dots are obtained, and a foundation is laid for the application of antimonide alloy-based InAs quantum dots in the fields of solar cells, photoelectric detectors and the like.
Description
Technical field
The invention belongs to the semiconductor photoelectric device preparing technical field, particularly the molecular beam epitaxy accretion method of a kind of InAs/GaAsSb quantum dot of stress self assembly.
Background technology
Stress self assembly quantum dot be the most easily with the mutually integrated based semiconductor quantum dot of existing photoelectric device technology.Realized the small lot application based on the low threshold laser of InAs quantum dot; And the level structure of GaAsSb alloy can be carried out adjusting in a big way through change of component, and the enforcement that InAs quantum dot and GaAsSb are combined to energy band engineering provides more wide space.
At present, people are with the device architecture of the outstanding many unique properties of antimonide alloy designs, but the antimonide device development and application that still had some effects limit; Comprise that antimonide alloy growth controllable components property is poor; In the time of the epitaxial growth antimonide, segregation is serious, and antimony element is accumulated in epitaxial surface easily; This is to migration, the diffusion of atom on the surface, and the subsequent device process optimization all has very big influence.In addition, in epitaxial growth GaAsSb alloy process, As, Sb sticking coefficient differ bigger, and simultaneously this difference temperature influence is obvious: at a lower temperature, alloy compositions is mainly by the decision of As line, and mainly determined by the Sb line under the high temperature; Because the MBE growth can't realize temperature shock, can't know accurate temperature when especially the sticking In of epitaxial wafer grows simultaneously, this makes the control of antimonide alloy compositions become technical barrier.Also be mingled with the problem problem that makes such as As/Sb the exchanges complicacy more that becomes in the middle of this.
The present invention has proposed the low GaAsSb alloy thin layer of a kind of antimony content of preparation earlier, the molecular beam epitaxy accretion method of the InAs quantum dot of growing then on the basis of further investigation As/Sb interchange process and InAs quantum dot self-assembled growth mechanism.The growth course of this method is determined by thermodynamic parameter; It is little that the GaAsSb alloy that makes is influenced by process conditions; Easy control of components; Obtained the InAs/GaAsSb quantum dot of controllable density, for the application in fields such as solar cell, photodetectors of antimonide alloy-based InAs quantum dot lays the foundation.
Summary of the invention
The molecular beam epitaxy accretion method that the purpose of this invention is to provide a kind of InAs/GaAsSb quantum dot; It is characterized in that; Adopt the low GaAsSb alloy thin layer of preparation antimony content earlier; Grow the then molecular beam epitaxial growth prepared stress self assembly GaAs base InAs/GaAsSb quantum dot of InAs quantum dot, concrete steps are following:
A.GaAs substrate deoxidation treatment: use solid source MBE (molecular beam epitaxy) equipment, As, Sb cracking source line are with As
4And Sb
4Be main,, carry out substrate heating, heat-preserving deoxidizing processing with Semi-insulating GaAs (100) substrate;
The growth of b.GaAs resilient coating: after substrate deoxidation fully, the GaAs resilient coating that the 180-230nm that at first grows is thick is to reduce the influence of substrate surface quality to subsequent growth;
The preparation of c.GaAsSb epitaxial loayer: buffer growth is closed Ga source shutter after finishing, and keeps the As protective atmosphere simultaneously; Make substrate drop to the temperature of appointment in the technology, treat that temperature reaches after, close the As shutter; And open Sb valve and shutter, make the GaAs surface of sample be exposed to 20-40 second under the Sb line, under the effect of Sb line; Displacement reaction takes place in the meeting of part A s atom and the Sb on GaAs surface, forms the GaAsSb thin layer;
The growth of d.InAs quantum dot: when closing the Sb shutter; Recover the As shutter, heating up simultaneously perhaps cools to the InAs growth temperature, after temperature arrives; Begin to deposit the InAs quantum dot and pay close attention to the variation of RHEED (reflected high energy electron diffraction) style simultaneously; With accurate acquisition critical transitions thickness, for the sample of observing pattern, the InAs deposition reaches and in time stops growing after the critical transitions and lower the temperature taking-up; Wherein, critical transitions thickness is adjusted between tens nanometers in several nanometers;
The preparation of e.InAs cap rock: for the sample of observing spectrum, under the InAs growth temperature, deposition 3-8nm low temperature GaAs then heats up and deposits 40-60nm GaAs more earlier.
GaAs among the said step a (100) substrate is ' epi-ready ' level Semi-insulating GaAs (100) substrate of Tong Mei Crystal Is Inc..
The used temperature of substrate deoxidation is observed deoxidation temperature by RHEED and is demarcated again among the said step a, and the preliminary examination temperature is 380-420 ℃, keeps 30-50 minute.
GaAs buffer growth rate controlled is at 0.6-1.2 μ m/h among the said step b, and growth temperature is at 570-590 ℃, V/III than (in the deposition process line of V group element and III family element electron gun than) between 15-25.
The temperature of appointment is the GaAsSb growth temperature among the said step c, and between 480-500 ℃, Sb speed stream is 1 * 10
-7-2 * 10
-7Between the Torr
The InAs growth temperature is between 480-500 ℃ in the said steps d, and In speed stream is 1 * 10
-8Below the Torr.
GaAs cap rock growth temperature is at 570-590 ℃ among the said step e, and V/III is than between 15-25.
The invention has the beneficial effects as follows the InAs/GaAsSb quantum dot that utilizes molecular beam epitaxy technique to prepare controllable density; InAs/GaAsSb quantum dot system of the present invention changes substrate into that lattice constant is bigger, the narrower GaAsSb alloy of energy gap, causes different Quantum Dots Growth kinetic parameters and new electricity, optical property.From InAsSb/GaAsSb SQW angle, the InAs/GaAsSb quantum dot is that the growth of InAsSb wetting layer stops at the moment that the initial stage three dimensional growth has just begun, and the electronics restriction effect of quantum dot is stronger than SQW, therefore can bring more significantly quantum effect.Adopt the density of different temperatures quantum dot in the practical application aspect the photoelectric device a new approach to be provided for the InAs quantum dot from this.
Embodiment
The present invention provides a kind of molecular beam epitaxy accretion method of InAs/GaAsSb quantum dot; Adopt the low GaAsSb alloy thin layer of preparation antimony content earlier; Grow the then molecular beam epitaxial growth prepared stress self assembly GaAs base InAs/GaAsSb quantum dot of InAs quantum dot, quantum dot density is 120/ μ m
2Change to 230/ μ m
2Below in conjunction with embodiment the present invention is specified:
Embodiment 1
A.GaAs substrate deoxidation treatment: use solid source MBE equipment, As, Sb cracking source line are with As
4And Sb
4Be main.' epi-ready ' level Semi-insulating GaAs (100) substrate with Tong Mei Crystal Is Inc. is heated to 400 ℃, keeps carrying out in 40 minutes the substrate deoxidation treatment.
The growth of b.GaAs resilient coating: after substrate deoxidation fully, the thick GaAs resilient coating of the 200nm that at first grows is to reduce the influence of substrate surface quality to subsequent growth; GaAs buffer growth rate controlled is at 1 μ m/h, and growth temperature is at 580 ℃, and the V/III ratio is 20.
The preparation of c.GaAsSb epitaxial loayer: buffer growth is closed Ga source shutter after finishing, and keeps the As protective atmosphere simultaneously; Make substrate drop to 480 ℃, treat that temperature reaches after, close the As shutter; And open Sb valve and shutter, make the GaAs surface of sample be exposed to the Sb line following 30 seconds.Under the effect of Sb line, displacement reaction takes place in the meeting of part A s atom and the Sb on GaAs surface, forms the GaAsSb thin layer.
The growth of d.InAs quantum dot: when closing the Sb shutter, recover the As shutter, be warmed up to 480 ℃ of InAs growth temperatures simultaneously.After temperature arrives, begin to deposit the InAs quantum dot and pay close attention to the variation of RHEED style simultaneously, with accurate acquisition critical transitions thickness; For the sample of observing pattern, the InAs deposition reaches and in time stops growing after the critical transitions and lower the temperature taking-up.
The preparation of e.InAs cap rock: for the sample of observing spectrum, under the InAs growth temperature, deposition 5nm low temperature GaAs then is warmed up to 580 ℃ earlier, than 20, deposits 55nm GaAs with V/III again; The density of the InAs quantum dot that obtains is 200/ μ m
2
Embodiment 2
A.GaAs substrate deoxidation treatment: use solid source MBE equipment, As, Sb cracking source line are with As
4And Sb
4Be main, ' epi-ready ' level Semi-insulating GaAs (100) substrate with Tong Mei Crystal Is Inc. is heated to 390 ℃, keeps carrying out in 45 minutes the substrate deoxidation treatment.
The growth of b.GaAs resilient coating: after substrate deoxidation fully, the thick GaAs resilient coating of the 220nm that at first grows is to reduce the influence of substrate surface quality to subsequent growth.GaAs buffer growth rate controlled is at 0.8 μ m/h, and growth temperature is at 585 ℃, and the V/III ratio is 22.
The preparation of c.GaAsSb epitaxial loayer: buffer growth is closed Ga source shutter after finishing, and keeps the As protective atmosphere simultaneously, makes substrate drop to 500 ℃.After treating that temperature reaches, close the As shutter, and open Sb valve and shutter, make the GaAs surface of sample be exposed to the Sb line following 30 seconds.Under the effect of Sb line, displacement reaction takes place in the meeting of part A s atom and the Sb on GaAs surface, forms the GaAsSb thin layer.
The growth of d.InAs quantum dot: when closing the Sb shutter, recover the As shutter, be warmed up to 500 ℃ of InAs growth temperatures simultaneously.After temperature arrives, begin to deposit the InAs quantum dot and pay close attention to the variation of RHEED style simultaneously, with accurate acquisition critical transitions thickness; For the sample of observing pattern, the InAs deposition reaches and in time stops growing after the critical transitions and lower the temperature taking-up.
The preparation of e.InAs cap rock: for the sample of observing spectrum, under the InAs growth temperature, deposition 5nm low temperature GaAs then is warmed up to 585 ℃ earlier, than 22, deposits 55nm GaAs with V/III again; The density of the InAs quantum dot that obtains is 230/ μ m
2
Claims (7)
1. the molecular beam epitaxy accretion method of an InAs/GaAsSb quantum dot; It is characterized in that; Adopt the low GaAsSb alloy thin layer of preparation antimony content earlier, the molecular beam epitaxial growth prepared stress self assembly GaAs base InAs/GaAsSb quantum dot of the InAs quantum dot of growing then, concrete steps are following:
A.GaAs substrate deoxidation treatment: use solid source MBE molecular beam epitaxial device, As, Sb cracking source line are with As
4And Sb
4Be main,, carry out the substrate deoxidation treatment with Semi-insulating GaAs (100) substrate;
The growth of b.GaAs resilient coating: after substrate deoxidation fully, the GaAs resilient coating that the 180-230nm that at first grows is thick is to reduce the influence of substrate surface quality to subsequent growth;
The preparation of c.GaAsSb epitaxial loayer: buffer growth is closed Ga source shutter after finishing, and keeps the As protective atmosphere simultaneously; Make substrate drop to the temperature of appointment in the technology, treat that temperature reaches after, close the As shutter; And open Sb valve and shutter, make the GaAs surface of sample be exposed to 20-40 second under the Sb line, under the effect of Sb line; Displacement reaction takes place in the meeting of part A s atom and the Sb on GaAs surface, forms the GaAsSb thin layer;
The growth of d.InAs quantum dot: when closing the Sb shutter; Recover the As shutter, heating up simultaneously perhaps cools to the InAs growth temperature, after temperature arrives; Begin to deposit the InAs quantum dot and pay close attention to the variation of RHEED reflection type electronic diffraction pattern simultaneously, with accurate acquisition critical transitions thickness; For the sample of observing pattern, the InAs deposition reaches and in time stops growing after the critical transitions and lower the temperature taking-up;
The preparation of e.InAs cap rock: for the sample of observing spectrum, under the InAs growth temperature, deposition 3-8nm low temperature GaAs then heats up and deposits 40-60nm GaAs more earlier.
2. according to the molecular beam epitaxy accretion method of the said InAs/GaAsSb quantum dot of claim 1, it is characterized in that GaAs among the said step a (100) substrate is ' epi-ready ' level Semi-insulating GaAs (100) substrate of Tong Mei Crystal Is Inc..
3. according to the molecular beam epitaxy accretion method of the said InAs/GaAsSb quantum dot of claim 1; It is characterized in that; The used temperature of substrate deoxidation is observed deoxidation temperature by RHEED and is demarcated again among the said step a, and the preliminary examination temperature is 380-420 ℃, keeps 30-50 minute.
4. according to the molecular beam epitaxy accretion method of the said InAs/GaAsSb quantum dot of claim 1, it is characterized in that GaAs buffer growth rate controlled is at 0.6-1.2 μ m/h among the said step b, growth temperature is at 570-590 ℃, and V/III is than between 15-25; Wherein, V/III is than the line ratio for V group element and III family element electron gun in the deposition process.
5. according to the molecular beam epitaxy accretion method of the said InAs/GaAsSb quantum dot of claim 1, it is characterized in that the temperature of appointment is the GaAsSb growth temperature among the said step c, between 480-500 ℃, Sb speed stream is 1 * 10
-7-2 * 10
-7Between the Torr.
6. according to the molecular beam epitaxy accretion method of the said InAs/GaAsSb quantum dot of claim 1, it is characterized in that the InAs growth temperature is between 480-500 ℃ in the said steps d, In speed stream is 1 * 10
-8Below the Torr.
7. according to the molecular beam epitaxy accretion method of the said InAs/GaAsSb quantum dot of claim 1, it is characterized in that GaAs cap rock growth temperature is at 570-590 ℃ among the said step e, V/III is than between 15-25.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514189A (en) * | 2016-01-13 | 2016-04-20 | 中国科学院上海技术物理研究所 | Type-II super-lattice structure based on indium arsenide substrate and preparation method |
| CN106409937A (en) * | 2016-04-19 | 2017-02-15 | 中国科学院上海技术物理研究所 | Indium arsenide base II superlattice structure and preparation method |
| CN108847385A (en) * | 2018-06-11 | 2018-11-20 | 中国电子科技集团公司第四十四研究所 | A kind of GaAs base InAs quanta point material growth method |
| CN110646451A (en) * | 2019-08-27 | 2020-01-03 | 中国电子科技集团公司第十一研究所 | Beam proportion detection method and detection equipment |
| CN113358677A (en) * | 2021-06-06 | 2021-09-07 | 南京国科半导体有限公司 | Method for measuring growth speed of InAs layer grown on GaSb substrate |
| CN114381801A (en) * | 2021-12-14 | 2022-04-22 | 南京信光半导体科技有限公司 | Molecular beam epitaxy preparation method of high-density and high-uniformity InAs/GaAs quantum dots |
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| CN101724894A (en) * | 2009-12-23 | 2010-06-09 | 哈尔滨工业大学 | Molecular beam epitaxy method for GaAS-based InAs1-xSbx/InSb multi-quantum-well film |
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Patent Citations (1)
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| CN101724894A (en) * | 2009-12-23 | 2010-06-09 | 哈尔滨工业大学 | Molecular beam epitaxy method for GaAS-based InAs1-xSbx/InSb multi-quantum-well film |
Non-Patent Citations (1)
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| 赵宇: "《InAs/GaAsSb量子点外延生长与光学特性研究》", 《INAS/GAASSB量子点外延生长与光学特性研究》, 22 April 2011 (2011-04-22) * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514189A (en) * | 2016-01-13 | 2016-04-20 | 中国科学院上海技术物理研究所 | Type-II super-lattice structure based on indium arsenide substrate and preparation method |
| CN106409937A (en) * | 2016-04-19 | 2017-02-15 | 中国科学院上海技术物理研究所 | Indium arsenide base II superlattice structure and preparation method |
| CN108847385A (en) * | 2018-06-11 | 2018-11-20 | 中国电子科技集团公司第四十四研究所 | A kind of GaAs base InAs quanta point material growth method |
| CN108847385B (en) * | 2018-06-11 | 2020-11-06 | 中国电子科技集团公司第四十四研究所 | GaAs-based InAs quantum dot material growth method |
| CN110646451A (en) * | 2019-08-27 | 2020-01-03 | 中国电子科技集团公司第十一研究所 | Beam proportion detection method and detection equipment |
| CN110646451B (en) * | 2019-08-27 | 2022-08-19 | 中国电子科技集团公司第十一研究所 | Beam proportion detection method and detection equipment |
| CN113358677A (en) * | 2021-06-06 | 2021-09-07 | 南京国科半导体有限公司 | Method for measuring growth speed of InAs layer grown on GaSb substrate |
| CN114381801A (en) * | 2021-12-14 | 2022-04-22 | 南京信光半导体科技有限公司 | Molecular beam epitaxy preparation method of high-density and high-uniformity InAs/GaAs quantum dots |
| CN114381801B (en) * | 2021-12-14 | 2024-07-23 | 南京信光半导体科技有限公司 | Molecular beam epitaxy preparation method of high-density high-uniformity InAs/GaAs quantum dots |
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Application publication date: 20120620 |