CN102507988A - Intermittent-contact-mode measuring method of Kelvin probe force microscope - Google Patents
Intermittent-contact-mode measuring method of Kelvin probe force microscope Download PDFInfo
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- CN102507988A CN102507988A CN2011103100421A CN201110310042A CN102507988A CN 102507988 A CN102507988 A CN 102507988A CN 2011103100421 A CN2011103100421 A CN 2011103100421A CN 201110310042 A CN201110310042 A CN 201110310042A CN 102507988 A CN102507988 A CN 102507988A
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- 239000000523 sample Substances 0.000 title claims abstract description 149
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000004654 kelvin probe force microscopy Methods 0.000 claims description 35
- 238000012876 topography Methods 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 238000001514 detection method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 15
- 238000005381 potential energy Methods 0.000 description 14
- 238000003384 imaging method Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 238000004667 electrostatic force microscopy Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000004936 stimulating effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000013068 control sample Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- IBYSTTGVDIFUAY-UHFFFAOYSA-N vanadium monoxide Chemical compound [V]=O IBYSTTGVDIFUAY-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention provides an intermittent-contact-mode measuring method of a Kelvin probe force microscope. The Kelvin probe force microscope comprises a scanning head, a probe, a probe position sensor, a piezoelectric vibration exciter, a piezoelectric scanner, a low-frequency voltage signal generator, a high-frequency voltage signal generator, a low-frequency vibration signal detector, a high-frequency vibration signal detector, a high-frequency voltage and compensating voltage signal superimposer, a Kelvin feedback controller and a controller, wherein the piezoelectric scanner is provided with samples. On the basis of the existing Kelvin probe force microscope, one-time scanning is carried out by adopting a probe and a sample intermittent contact scanning mode in the intermittent-contact-mode measuring method provided by the invention, so as to acquire morphology and local electric potential images at the same time, thus the scanning speed can be increased by one time; and the sensitivity of signal detection can be improved.
Description
Technical field
Technical field
The invention belongs to the field of measurement of Kelvin probe force microscopy.
Background technology
(Kelvin Probe Force Microscopy KPFM) is based on atomic force microscope (Atomic force microscopy, technology AFM), local electromotive force and Two dimensional Distribution situation thereof that it can measuring samples to Kelvin probe force microscopy.Kelvin probe force microscopy has become the important characterization tool of material microstructure and character.
And electrostatic force microscope (Electrostatic force microscopy, EFM) the same, Kelvin probe force microscopy also is based on long-range electrostatic force imaging, equally also obtains the surface topography of sample by atomic force microscope.The main difference of Kelvin probe force microscopy and electrostatic force microscope is: Kelvin probe force microscopy applies bucking voltage on probe or sample; Adjust this bucking voltage in real time through Kelvin's feedback controller of special use and make that the electrostatic force of probe and sample room is zero, thereby quantitatively record the local electromotive force of sample surfaces.
The Kelvin probe force microscopy that works under the atmospheric environment adopts " lifting pattern " usually.Like a kind of Kelvin probe force microscopy of the one Chinese patent application CN201010103017.1 that the inventor applied for and the patent of invention of measuring method thereof, it " lifts pattern " is that a kind of every capable image all scans twice imaging mode: first pass obtains surface topography with common atomic force microscope formation method (scan pattern that refers to probe and sample Intermittent Contact is promptly rapped pattern) through measuring interatomic force earlier; Second time scanning the time is then lifted certain height (probe is not contacted with sample) with probe, according to before pattern fluctuating information maintenance probe-sample interval of obtaining constant and scan and obtain local Potential Distribution image through feedback and compensation simultaneously to long-range electrostatic force.
Kelvin probe force microscopy and atomic force microscope adopt the micro-cantilever probe to come ergometry, and the intrinsic mechanical vibration pattern that need excite probe is to improve sensitivity.The micro-cantilever probe has multiple intrinsic mechanical vibration pattern, as for the first time, for the second time, vibration mode for the third time etc.The vibration mode first time of micro-cantilever probe is adopted in pattern imaging in the Kelvin probe force microscopy under the atmospheric environment usually; Vibration mode is for the first time adopted in the imaging of the local electromotive force of Kelvin probe force microscopy usually under the compression ring border, but also can adopt the vibration mode than high order, like the vibration mode second time.
Because its measuring process of existing Kelvin probe force microscopy is to adopt probe to lift with every capable image all to scan twice imaging mode, so on sensitivity and scanning imagery speed, have space to be hoisted.
Summary of the invention
The objective of the invention is to overcome the deficiency of prior art, the Intermittent Contact formula measuring method of the Kelvin probe force microscopy of a kind of effective lifting sensitivity and scanning imagery speed is provided.
In order to realize the foregoing invention purpose, the technical scheme of employing is following.
A kind of Intermittent Contact formula measuring method of Kelvin probe force microscopy; Said Kelvin probe force microscopy comprises scanner head, probe, probe location inductor, piezoelectric vibration exciter, piezoelectric scanner, low-frequency voltage signal generator, high-frequency voltage signal generator, low-frequency vibration signal detecting device, high-frequency vibration signal detecting device, HF voltage and compensation voltage signal superimposer, Kelvin's feedback controller and controller; Be placed with sample on the said piezoelectric scanner, its measuring method is for operate simultaneously as follows:
Operation A, produce the low identical or approaching voltage signal of eigenfrequency of corresponding probe by the low-frequency voltage signal generator; And be applied on the piezoelectric vibration exciter that closely links to each other with probe; Thereby excite probe on low frequency modes, to vibrate; The probe location inductor is sensed this vibration and it is sent to the low-frequency vibration signal detecting device, measures its amplitude and phase signal, obtains sample topography figure thereby controller control piezoelectric scanner scans probe on sample;
Operate B, produce the identical or approaching high-frequency voltage signal of corresponding probe higher eigenfrequency by the high-frequency voltage signal generator; And apply between probe and the sample, the electrostatic force of probe and sample room interacts, and excites probe on the dither pattern, to vibrate; The probe location inductor is sensed this vibration and it is sent to the high-frequency vibration signal detecting device; Measure its amplitude and phase signal, deliver to Kelvin's feedback controller, Kelvin's feedback controller produces a compensation voltage signal automatically according to the amplitude of dither; This compensation voltage signal is sent to HF voltage and compensation voltage signal superimposer; And the high-frequency voltage signal stack is after-applied between probe and sample, and this compensation voltage signal also is sent to controller simultaneously, and controller utilizes this signal to form the image of the local Potential Distributing of sample surfaces.
The voltage signal that said high-frequency voltage signal generator produces comprises direct current signal and AC signal, and this direct current signal and AC signal can be respectively or be applied to simultaneously on probe or the sample.
Among the said operation B, can produce a plurality of voltage signals simultaneously by the high-frequency voltage signal generator, to excite a plurality of dither patterns of probe, correspondingly, the high-frequency vibration signal detecting device also detects a plurality of vibration signals simultaneously and is controlled to picture by controller.
The present invention adopts probe and the scan pattern of sample Intermittent Contact, a scanning to obtain pattern and local potential energy diagram picture simultaneously on the basis of existing Kelvin probe force microscopy, and sweep velocity can double.The vibration mode first time of probe is adopted in pattern imaging of the present invention, and the vibration mode than high order is then adopted in the electrostatic force imaging.For the Kelvin probe force microscopy that has the pattern of lifting now, this method probe-sample interval when measuring is less, and the sensitivity that electrostatic force detects is higher.Thereby the Kelvin probe force microscopy among the present invention has the high characteristics of resolution.And compare with the Kelvin probe force microscopy that adopts " lifting pattern "; The mode of operation of this probe and sample Intermittent Contact makes the average headway of probe and sample room greatly reduce; Probe can arrive stronger electrostatic force signal by probe; Make that the signal noise ratio of Kelvin's feedback controller is bigger, performance is more stable.Therefore, can obtain having more high-resolution local potential energy diagram picture with this mode of operation.
Description of drawings
Fig. 1 is the structural representation of Kelvin probe force microscopy of the present invention.
Fig. 2 is a scan image comparison diagram as a result, and wherein (A) is feature image, the local potential energy diagram picture that (B) obtains for the measuring method that adopts among the present invention, (C) the local potential energy diagram picture for adopting existing " lifting pattern " to obtain.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explanation.
The structure of Kelvin probe force microscopy of the present invention comprises scanner head 1 shown in accompanying drawing 1, probe 1-1, probe location inductor 1-2; Piezoelectric vibration exciter 1-3, piezoelectric scanner 1-5, low-frequency voltage signal generator 2; High-frequency voltage signal generator 3, high-frequency voltage signal detecting device 4, low-frequency vibration signal detecting device 5; HF voltage and compensation voltage signal superimposer 6, Kelvin's feedback controller 7, controller 8.
Sample 1-4 is fixed on the piezoelectric scanner 1-5, and piezoelectric scanner 1-5 drives sample under the output voltage effect of controller 8 changes at X, Y, Z three-dimensional space position, thus the relative position of control sample 1-4 and probe 1-1 needle point.Pattern scanning utilizes the vibration mode first time (its eigenfrequency frequency for the high order vibration mode is lower) of probe 1-1; The ac voltage signal identical or approaching with first eigenfrequency produced by low-frequency voltage signal generator 2 and is applied on the piezoelectric vibration exciter 1-3 that closely links to each other with probe 1-1, thereby excites probe 1-1 to vibrate on the vibration mode in the first time.Probe location inductor 1-2 senses this vibration and it is sent to low-frequency vibration signal detecting device 5 and measures its amplitude and phase signal.Thereby controller 8 utilizes this signal controlling piezoelectric scanner 1-5 that probe 1-1 is scanned on sample 1-4 and obtains sample topography figure.
The local potential energy diagram similarly is in pattern scanning, to obtain.That is to say that probe only need scan one time can obtain pattern and two kinds of images of electrostatic force.This with common atmospheric environment under need in the Kelvin probe force microscopy twice of scanning " lifting pattern " different.With the present invention measure the local potential energy diagram as the time, probe and sample are Intermittent Contact.
When carrying out surface potential image scanning, utilized probe 1-1 than high order vibration mode (its eigenfrequency frequency for first time vibration mode is higher).The sinusoidal voltage signal identical or approaching with its eigenfrequency produced by high-frequency voltage signal generator 3, apply between probe 1-1 and the sample 1-4, thereby through electrostatic force interact excite probe 1-1 than the high order vibration mode.Probe location inductor 1-2 senses this vibration and it is sent to high-frequency voltage signal detecting device 4 to measure its amplitude and phase signal; Deliver to Kelvin's feedback controller 7; Kelvin's feedback controller 7 produces a compensation voltage signal automatically according to the amplitude of high-frequency vibration signal; This compensation voltage signal is sent to HF voltage and compensation voltage signal superimposer 6, and the high-frequency voltage signal stack is after-applied between probe 1-1 and sample 1-4.Therefore, it is poor that this bucking voltage can be used for changing the effective electromotive force of probe-sample room, thereby change the suffered electrostatic force size of probe.Size and polarity that Kelvin's feedback controller 7 is adjusted this bucking voltage automatically according to certain strategy make that the electrostatic force vanishing of probe-sample room is perhaps minimum, that is to say the local electromotive force that makes this bucking voltage just equal sample surfaces.This compensation voltage signal is given controller 8 simultaneously, and controller 8 utilizes this signal to form the image of the local Potential Distributing of sample surfaces.
When carrying out sample local potential measurement, also can excite a plurality of vibration modes of probe 1-1 simultaneously.At this moment, high-frequency voltage signal generator 3 produces a plurality of excitation signals simultaneously, and high-frequency voltage signal detecting device 4 also detects a plurality of signals simultaneously and formed images by controller 8.
When Kelvin probe force microscopy forms images, be used for originally topography measurement the first time vibration mode by with carry out pattern identical mode of when scanning separately and be excited; This vibration goes on record and forms the pattern picture.Usually, the mechanical vibration amplitude of vibration mode is compared with the first time, and the Oscillation Amplitude that is used for the high order vibration mode of local electromotive force imaging can be much little, and therefore, electrostatic force is very little to the influence of pattern during measurement.Simultaneously, for the first time vibration mode excite the effect of also having played stable probe vibration, help adopting the measurement of the local electromotive force of high order vibration mode.
Measuring principle of the present invention is following:
When between probe 1-1 and sample 1-4, having applied the voltage signal that compensates and exchange, its electrostatic force can be expressed as:
The component of electrostatic force on frequency
is:
If applying compensation voltage signal
at probe-sample room is 0, then the amplitude of detected radio-frequency signal
is directly proportional with the electrostatic force of probe-sample room.In Kelvin probe force microscopy; Kelvin's feedback controller 7 produces compensation voltage signal
automatically; Make just in time to equal the electric potential difference
between probe and the sample, even
in the bucking voltage that probe-sample room applies.With this compensation voltage signal imaging, just can obtain the actual measured value and the distribution thereof of the surface potential of sample.Common electrostatic force microscope is based on this principle work.
In the Kelvin probe force microscopy of the Intermittent Contact formula that the present invention relates to; Because the average headway of probe and sample room is less; The gradient that probe and sample room equivalent capacity are adjusted the distance
big (gradient
and probe and sample interval square be inversely proportional to), thereby the electrostatic force component in total electrostatic force in the formula (1) and the formula (2) all obtains increase.Therefore, adopt after this working method probe to may detect stronger electrostatic force signal and make sensitivity increase, thereby can obtain having more high-resolution local potential energy diagram picture.
Concrete measuring method of the present invention is following.
1, confirms eigenfrequency.Excite the vibration mode of probe 1-1, as for the first time, for the second time, vibration mode for the third time etc., obtain the eigenfrequency of each time vibration mode.Select first eigenfrequency or near the frequency it stimulating frequency, the stimulating frequency of selecting one or more higher eigenfrequencies to measure as surface potential as pattern scanning.
2, two dimensional image scanning.Adopt " rapping pattern " that probe is scanned on sample.The record probe 1-1 vibration signal of vibration mode for the first time obtains the pattern curve; The compensation voltage signal that Kelvin's feedback controller 7 operate as normal and output are equated with local electromotive force order of magnitude is applied to this compensation voltage signal and higher-frequency AC signal between probe-sample; Write down this compensation voltage signal (its numerical value is represented the local electromotive force).Line by line scan at last and obtain a plurality of entire image simultaneously.
Accompanying drawing 2 has been showed sample topography figure and the local potential energy diagram that utilizes the present invention and existing Kelvin probe force microscopy to record.Used probe is a rectangle silicon probe (MESP type; U.S. Veeco company); Its for the first time frequency and the quality factor of eigenvibration be respectively:
and
, the second time, the frequency and the quality factor of eigenvibration were respectively:
and
.Specimen in use is the vanadium oxygen phthalocyanine thin film (HOPG-VOPC) on the graphite.The probe first local oscillator mechanical vibration amplitude A
1=320 nm; Added AC signal amplitude A on the second eigenvibration frequency
2=1.5 V.The bucking voltage of high frequency excitation voltage and the output of Kelvin's feedback controller all puts on the sample probe ground connection.
Among Fig. 2; Image (A) is a feature image; The local potential energy diagram picture of image (B) for obtaining with " Intermittent Contact pattern " among the present invention, the local potential energy diagram picture (the probe raising height is 30 nm) that image (C) obtains for " lifting pattern " with existing Kelvin probe force microscopy.The image scanning scope is
, and sweep velocity is
.Height change scope among the figure (A) is 0～7nm, and the potential change scope among figure (B) and the figure (C) is 100～300meV.See that from the result of Fig. 2 the present invention can record the surface topography map (A) and the local potential energy diagram (B) of sample simultaneously.See that from shape appearance figure the height of sample surfaces pattern rises and falls and in whole sweep limit, is merely several nanometers, and is comparatively smooth.Adopt the lateral resolution lower (its resolution is lower than feature image) of the traditional resulting local potential energy diagram of the pattern of lifting picture (figure C).And after " Intermittent Contact pattern " among employing the present invention, the lateral resolution of resulting local potential energy diagram picture (figure B) be greatly improved (its resolution and feature image are similar).This explanation can improve the lateral resolution of the local potential energy diagram picture of Kelvin probe force microscopy with the present invention.
The present invention is the basis with the atomic force microscope under the atmosphere; The first eigenvibration pattern through utilizing probe 1-1 is measured pattern; Simultaneously under the situation of probe 1-1 and sample 1-4 intermittent basis, utilize its high order eigenvibration pattern to come the surface measurements electromotive force, can obtain the shape appearance figure and the local potential profile of sample simultaneously.This method can not influence the original measurement function of atomic force microscope, and can improve the lateral resolution and the sensitivity of Kelvin probe force microscopy.
Claims (3)
1. the Intermittent Contact formula measuring method of a Kelvin probe force microscopy; Said Kelvin probe force microscopy comprises scanner head (1) and low-frequency voltage signal generator (2), high-frequency voltage signal generator (3), low-frequency vibration signal detecting device (5), high-frequency vibration signal detecting device (4), HF voltage and compensation voltage signal superimposer (6), Kelvin's feedback controller (7) and the controller of being made up of probe (1-1), probe location inductor (1-2), piezoelectric vibration exciter (1-3), piezoelectric scanner (1-5) (8); Be placed with sample (1-4) on the said piezoelectric scanner (1-5), it is characterized in that measuring method operates simultaneously as follows:
Operation A, produce the low identical or approaching voltage signal of eigenfrequency of corresponding probe (1-1) by low-frequency voltage signal generator (2); And be applied on the piezoelectric vibration exciter (1-3) that closely links to each other with probe (1-1); Thereby excite probe (1-1) on low frequency modes, to vibrate; Probe location inductor (1-2) is sensed this vibration and it is sent to low-frequency vibration signal detecting device (5); Measure its amplitude and phase signal, controller (8) control piezoelectric scanner (1-5) make probe (1-1) at sample (1-4) thus going up scanning obtains sample topography figure;
Operate B, produce the identical or approaching high-frequency voltage signal of corresponding probe (1-1) higher eigenfrequency by high-frequency voltage signal generator (3); And apply between probe (1-1) and the sample (1-4); Electrostatic force between probe (1-1) and sample (1-4) interacts; Excite probe (1-1) on the dither pattern, to vibrate, probe location inductor (1-2) is sensed this vibration and it is sent to high-frequency vibration signal detecting device (4), measures its amplitude and phase signal; Deliver to Kelvin's feedback controller (7); Kelvin's feedback controller (7) produces a compensation voltage signal automatically according to the amplitude of dither, and this compensation voltage signal is sent to HF voltage and compensation voltage signal superimposer (6), and the high-frequency voltage signal stack is after-applied between probe (1-1) and sample (1-4); This compensation voltage signal also is sent to controller (8) simultaneously, and controller (8) utilizes this signal to form the image of the local Potential Distributing of sample surfaces.
2. the Intermittent Contact formula measuring method of Kelvin probe force microscopy according to claim 1; It is characterized in that the voltage signal that said high-frequency voltage signal generator (3) produces comprises direct current signal and AC signal, this direct current signal and AC signal can be respectively or are applied to simultaneously on probe (1-1) or the sample (1-4).
3. the Intermittent Contact formula measuring method of electrostatic force microscope according to claim 1; It is characterized in that among the said operation B; Can produce a plurality of voltage signals simultaneously by high-frequency voltage signal generator (3); To excite a plurality of dither patterns of probe (1-1), correspondingly, high-frequency vibration signal detecting device (4) also detects a plurality of vibration signals simultaneously and is controlled to picture by controller (8).
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Cited By (12)
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|---|---|---|---|---|
| CN103336151A (en) * | 2013-06-21 | 2013-10-02 | 中山大学 | Magnetic microscope and measurement method thereof |
| CN103681296A (en) * | 2012-09-14 | 2014-03-26 | 意法半导体公司 | Inline metrology for attaining full wafer map of uniformity and surface charge |
| CN106501552A (en) * | 2015-09-07 | 2017-03-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of while the method for measurement surface magnetic and surface potential |
| CN106802357A (en) * | 2016-12-15 | 2017-06-06 | 南京邮电大学 | A kind of Digital Signal Processing and analysis method of the micro- detection two dimensional image of Kelvin |
| CN106841687A (en) * | 2017-02-21 | 2017-06-13 | 哈尔滨工业大学 | The method that multi-parameter synchro measure is carried out using Kelvin probe force microscopy |
| CN107066925A (en) * | 2016-12-30 | 2017-08-18 | 上海摩软通讯技术有限公司 | A kind of fingerprint acquisition device and method |
| CN108195921A (en) * | 2017-12-13 | 2018-06-22 | 南京邮电大学 | A kind of method that surface potential signal is extracted in the detection image from electrostatic force microscope |
| CN108802431A (en) * | 2017-05-04 | 2018-11-13 | 中国科学院宁波材料技术与工程研究所 | A kind of detection method of the scanning probe microscopy with magnetic-electric signal detecting function |
| CN110907663A (en) * | 2019-12-18 | 2020-03-24 | 哈尔滨工业大学 | Kelvin probe force microscope measuring method based on T-shaped cantilever beam probe |
| CN113916967A (en) * | 2021-09-28 | 2022-01-11 | 中山大学 | Method for imaging and detecting subsurface |
| CN114322745A (en) * | 2021-12-31 | 2022-04-12 | 华中科技大学 | Method for simultaneously measuring surface potential and surface morphology of conductor |
| CN114397352A (en) * | 2021-12-31 | 2022-04-26 | 华中科技大学 | Potential measurement method insensitive to probe and sample spacing change |
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| CN103336151A (en) * | 2013-06-21 | 2013-10-02 | 中山大学 | Magnetic microscope and measurement method thereof |
| CN106501552A (en) * | 2015-09-07 | 2017-03-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of while the method for measurement surface magnetic and surface potential |
| CN106501552B (en) * | 2015-09-07 | 2019-09-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method that is a kind of while measuring surface magnetism and surface potential |
| CN106802357A (en) * | 2016-12-15 | 2017-06-06 | 南京邮电大学 | A kind of Digital Signal Processing and analysis method of the micro- detection two dimensional image of Kelvin |
| CN106802357B (en) * | 2016-12-15 | 2019-06-25 | 南京邮电大学 | A kind of Digital Signal Processing and analysis method of the micro- detection two dimensional image of Kelvin |
| CN107066925A (en) * | 2016-12-30 | 2017-08-18 | 上海摩软通讯技术有限公司 | A kind of fingerprint acquisition device and method |
| CN106841687B (en) * | 2017-02-21 | 2019-04-26 | 哈尔滨工业大学 | The method that multi-parameter synchro measure is carried out using Kelvin probe force microscopy |
| CN106841687A (en) * | 2017-02-21 | 2017-06-13 | 哈尔滨工业大学 | The method that multi-parameter synchro measure is carried out using Kelvin probe force microscopy |
| CN108802431A (en) * | 2017-05-04 | 2018-11-13 | 中国科学院宁波材料技术与工程研究所 | A kind of detection method of the scanning probe microscopy with magnetic-electric signal detecting function |
| CN108195921A (en) * | 2017-12-13 | 2018-06-22 | 南京邮电大学 | A kind of method that surface potential signal is extracted in the detection image from electrostatic force microscope |
| CN110907663A (en) * | 2019-12-18 | 2020-03-24 | 哈尔滨工业大学 | Kelvin probe force microscope measuring method based on T-shaped cantilever beam probe |
| CN110907663B (en) * | 2019-12-18 | 2021-12-21 | 哈尔滨工业大学 | Kelvin probe force microscope measuring method based on T-shaped cantilever beam probe |
| CN113916967A (en) * | 2021-09-28 | 2022-01-11 | 中山大学 | Method for imaging and detecting subsurface |
| CN114322745A (en) * | 2021-12-31 | 2022-04-12 | 华中科技大学 | Method for simultaneously measuring surface potential and surface morphology of conductor |
| CN114397352A (en) * | 2021-12-31 | 2022-04-26 | 华中科技大学 | Potential measurement method insensitive to probe and sample spacing change |
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| CN114397352B (en) * | 2021-12-31 | 2024-02-20 | 华中科技大学 | Potential measurement method insensitive to probe and sample interval change |
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Application publication date: 20120620 |