CN102505139A - Manufacturing method of polysilicon film - Google Patents
Manufacturing method of polysilicon film Download PDFInfo
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- CN102505139A CN102505139A CN 201110307025 CN201110307025A CN102505139A CN 102505139 A CN102505139 A CN 102505139A CN 201110307025 CN201110307025 CN 201110307025 CN 201110307025 A CN201110307025 A CN 201110307025A CN 102505139 A CN102505139 A CN 102505139A
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Abstract
The invention provides a manufacturing method of a polysilicon film, which comprises the following steps: precipitating amorphous silicon; scanning the amorphous silicon by laser for preliminary crystallization of the amorphous silicon; annealing the amorphous silicon after preliminary crystallization to complete crystallization. In addition, during the laser scanning of the amorphous silicon, a mask can be placed on the amorphous silicon. The method provided by the invention can form a polysilicon film with a regular crystal grain structure and good uniformity. The annealing temperature can be reduced to below 600 DEG C, and thus the method is applicable to cheap glass substrates.
Description
Technical field
The invention belongs to field of semiconductor manufacture, relate in particular to a kind of method of manufacture of polysilicon membrane.
Background technology
Commonly used to the silicon materials film in semiconductor applications, thin film transistor (TFT) etc. for example.Wherein the electronic mobility of non-crystalline silicon is low, has restricted the working speed of semiconducter device, so the preparation technology of the higher polysilicon of electronic mobility becomes the emphasis of people's research and development.
At present, the non-crystalline silicon crystallization is that polysilicon mainly contains solid phase crystallization method (SPC), ELA PRK crystallization method, metal-induced crystallization method (MIC).Above method respectively has the relative merits of oneself; Solid phase crystallization method needs substrate because need long-time high temperature annealing be resistant to elevated temperatures silicon chip of ability or quartz; Be difficult to use in cheap glass substrate, the crystal grain that the while solid phase crystallization method is produced distributes mixed and disorderly, and crystal boundary is arranged does not have rule.ELA PRK crystallization method can obtain polysilicon membrane; But there is certain problem in the homogeneity of polysilicon membrane; If not crystal silicon film forming thickness or density are inconsistent, are easy to occur the part and burn, simultaneously the PRK apparatus expensive; Need to use expensive rare gas element, make cost higher.It is big and the polysilicon membrane of discontinuous crystal grain boundary is arranged that metal-induced crystallization method and its improved metal induced longitudinal crystallization method can prepare crystal grain, and the homogeneity of material and device is with repeatable better.But induce the residual performance that can reduce material and device of metal.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of method of manufacture of polysilicon membrane, can reduce the annealing temperature and the annealing time of follow-up SPC solid phase crystallization, the problem that burn the part can not occur, and can avoid the metal residual problem.
The present invention provides a kind of method of manufacture of polysilicon membrane, comprising:
Deposition of amorphous silicon;
Utilize this non-crystalline silicon of laser scanning, make the preliminary crystallization of non-crystalline silicon;
Crystallization is accomplished in non-crystalline silicon annealing to preliminary crystallization.
According to method of manufacture provided by the invention, wherein when the laser scanning non-crystalline silicon, on non-crystalline silicon, place mask.
According to method of manufacture provided by the invention, wherein said mask has the transmission region of bar shaped or has the light hole array.
According to method of manufacture provided by the invention, wherein said light hole is circular or square.
According to method of manufacture provided by the invention, the energy density of wherein said laser is 200～350mJ.
According to method of manufacture provided by the invention, wherein laser is vertical with substrate plane.
According to method of manufacture provided by the invention, wherein the sweep velocity of laser is 1～5mm/s, and the pulse-repetition of laser is 200～900Hz.
According to method of manufacture provided by the invention, wherein anneal and in rare gas element, carry out.
The present invention also provides a kind of method of manufacturing thin film transistor, it is characterized in that utilizing the polysilicon membrane processed by the described method of claim 1 as the active layer of thin film transistor and make thin film transistor.
The present invention also provides a kind of thin film transistor of being processed by aforesaid method.
Preparation method of polycrystalline silicon provided by the invention can reduce the annealing temperature and the annealing time of follow-up solid phase crystallization; Annealing temperature can be reduced to below 600 ℃; Make it to be applied to cheap glass substrate; Simultaneously, early stage laser tentatively to scan crystallization time shorter, the problem that burn the part can not appear.When preliminary laser crystallization, the mask with specific composition is set on amorphous silicon membrane, can control the scanning area of laser in amorphous silicon surfaces; The regional crystallization that is scanned; Become the epipole of follow-up solid phase crystallization, crystal grain is the center with it, grows up gradually; Formation has the polysilicon membrane of regular crystalline-granular texture, and homogeneity is better.
Description of drawings
Followingly the embodiment of the invention is described further with reference to accompanying drawing, wherein:
Fig. 1 is the cross sectional representation according to the method resulting structures of embodiment 1;
Fig. 2 is the SEM shape appearance figure of the polysilicon membrane of embodiment 1 gained;
Fig. 3 is according to the synoptic diagram of the method resulting structures of embodiment 2 and the local enlarged diagram of employed mask;
Fig. 4 is the SEM shape appearance figure of the polysilicon membrane of embodiment 2 gained;
Fig. 5 is the pattern of embodiment 3 employed masks;
Fig. 6 is the SEM shape appearance figure of the polysilicon membrane of embodiment 3 gained;
Fig. 7 is the pattern of employed mask according to one embodiment of present invention.
Embodiment
The method of manufacture of polysilicon membrane provided by the invention combines laser crystallization with solid phase crystallization method, after laser tentatively scans crystallization, form polysilicon through solid phase crystallization method annealing crystallization again.
Embodiment 1
Present embodiment provides a kind of method of manufacture of polysilicon membrane, comprising:
1) silicon-dioxide of deposition 500 nanometers deposits the precursor of the non-crystalline silicon 103 of one deck 50 nanometers as crystallization again as blocking layer 102 on glass substrate as shown in Figure 1 101;
2) use energy density to be 240mJ, pulse-repetition PRK scanning step 1 as 330Hz) in the non-crystalline silicon that forms, sweep velocity is 3mm/s, makes the preliminary crystallization of non-crystalline silicon, forms the epipole of follow-up solid phase crystallization;
3) crystallization, 590 ℃ of annealing temperatures, annealing time 6 hours are accomplished in annealing under nitrogen atmosphere.
The surface topography of the method gained sample that present embodiment provides is as shown in Figure 2, and visible crystal grain is arranged evenly.Through the preliminary crystallization of laser scanning, can shorten the crystallization time of follow-up solid phase crystallization method, and can be lower than the crystallization of annealing under 600 ℃ the temperature, make it to use cheap glass as substrate material.
Embodiment 2
Present embodiment provides a kind of method of manufacture of polysilicon membrane, comprising:
1) silicon-dioxide of deposition 500 nanometers deposits the precursor of the non-crystalline silicon 103 of one deck 50 nanometers as crystallization again as blocking layer 102 on glass substrate as shown in Figure 3 101;
2) above non-crystalline silicon 103, place mask 201 as shown in Figure 3, mask 201 has bar shaped transmission region as shown in Figure 3, and the width W of bar shaped transmission region is 1.5 μ m, and the space D of adjacent bar transmission region is 50 μ m;
3) use energy density to be 240mJ, pulse-repetition PRK scanning step 1 as 330Hz) in the non-crystalline silicon that forms; Laser beam is perpendicular to mask and substrate plane; Sweep velocity is 3mm/s, makes the corresponding preliminary crystallization of non-crystalline silicon in transmission region below, forms the epipole of follow-up solid phase crystallization;
4) crystallization, 590 ℃ of annealing temperatures, annealing time 10 hours are accomplished in annealing under nitrogen atmosphere.
In the method that present embodiment provides, the transmission region of mask allows high-octane laser to pass through, and the amorphous silicon membrane of the masked below of laser energy absorbs, and makes the non-crystalline silicon crystallization that this is regional, and the light tight area relative zone of mask is non-crystallized.So just form corresponding to the crystallization region of mask transmission region figure and the non-crystallized district in the light tight zone of corresponding mask on the amorphous silicon membrane surface; In follow-up solid phase annealing crystallization process; Polysilicon grain is along crystallization region and the continued growth of amorphized areas intersection; Complete until complete crystallization, like this through the mask of regular patterned, can form the crystal grain as shown in Figure 4 orderly polysilicon membrane of arranging.
Therefore, when preliminary laser crystallization, the mask with specific composition is set on amorphous silicon membrane; Can control the scanning area of laser,, become the epipole of follow-up solid phase crystallization by the regional crystallization that scanned in amorphous silicon surfaces; Crystal grain is the center with it; Grow up gradually, form the polysilicon membrane with regular crystalline-granular texture, homogeneity is better.
Embodiment 3
1) silicon-dioxide of deposition 500 nanometers deposits the precursor of the non-crystalline silicon 103 of one deck 50 nanometers as crystallization again as blocking layer 102 on glass substrate 101;
2) above non-crystalline silicon 103, place mask 201 as shown in Figure 5, mask 201 has circular light hole array as shown in Figure 5, and the radius of light hole is 1 μ m, and the spacing d of adjacent light hole is 40 μ m;
3) use energy density to be 270mJ, pulse-repetition PRK scanning step 1 as 540Hz) in the non-crystalline silicon that forms; Laser beam is perpendicular to mask and substrate plane; Sweep velocity is 3mm/s, makes the corresponding preliminary crystallization of non-crystalline silicon in light hole below, forms the epipole of follow-up solid phase crystallization;
4) crystallization, 590 ℃ of annealing temperatures, annealing time 12 hours are accomplished in annealing under nitrogen atmosphere.
The crystal grain of the method gained that present embodiment provides is rule arranges, crystal grain almost be with the light hole center to outgrowth, gained sample surfaces pattern is as shown in Figure 6.
Embodiment 4
Present embodiment provides a kind of method of manufacturing thin film transistor, comprising:
1) utilize the method for the foregoing description 1, enforcement 2 or embodiment 3 to prepare polysilicon membrane;
2) with the polysilicon membrane of step 1) preparation active layer, utilize existing thin film transistor ME, the preparation thin film transistor as thin film transistor.
The method for fabricating thin film transistor that present embodiment provides can be made thin film transistor under lower temperature, and since the crystal grain of prepared polysilicon membrane arrange uniform sequential, thereby make the unusual homogeneous of performance of the thin film transistor of preparation.
According to one embodiment of present invention, wherein the light hole on the mask is not limited to circle, also can also be other geometrical shapies such as trilateral for shown in Figure 7 square.
According to one embodiment of present invention, wherein the pattern of mask is not limited to bar shaped, light hole array, and those skilled in the art can be according to practical application and the pattern of designing mask, thereby forms needed crystal grain arrangement mode.
According to one embodiment of present invention, wherein substrate is not limited to glass, can also well known to a person skilled in the art substrate for quartz or silicon chip etc., and those skilled in the art can select specific substrate according to actual needs.
According to one embodiment of present invention, wherein can determine whether needs deposition of silica blocking layer according to the needs of practical application, perhaps deposit the blocking layer that other materials constitutes, the blocking layer is such as but not limited to 100～900 nanometers.
According to embodiments of the invention; Wherein annealing temperature can be 500～600 ℃, and annealing time can be 5～15 hours, and the annealed time can be selected according to the thickness of amorphous silicon membrane and the degree of the preliminary crystallization of laser; The thickness of amorphous silicon membrane is big more; Then required annealing time is long more, and the degree of preliminary crystallization is low more, and then the annealed time is long more.
According to one embodiment of present invention, the atmosphere when wherein annealing is not limited to nitrogen atmosphere, also can be other inert atmospheres such as Ar atmosphere.
According to one embodiment of present invention, step 2 wherein) employed laser can be the pulse gas-laser that the ELA excimer laser obtains, and also can be the pulse laser that solid laser obtains; The pulse-repetition of laser is preferably 300～800Hz; The energy density of laser is 200～350mJ, and preferred energy density is 240～270mJ, preferably adopts the frequency tripled laser of 335 nanometers of solid statelaser Nd:YAG laser; Because of its equipment is more cheap, and the laser of this wave band is easy to absorbed by silicon fiml.
According to one embodiment of present invention, the laser that is adopted can be vertical with substrate plane, also can be certain angle with substrate plane.
According to one embodiment of present invention, the hot spot of the laser that is adopted is not limited to the bar shaped shown in Fig. 3, also can wait other shapes for circle.
The sweep velocity of the laser that is adopted according to one embodiment of present invention, is 1～5mm/s.
What should explain at last is; Above embodiment is only to describe technical scheme of the present invention rather than to the restriction of technical scheme of the present invention; For a person skilled in the art; Should be appreciated that do not breaking away within spirit of the present invention and the scope, make amendment or improve, these modifications and improving all within spirit of the present invention and scope based on content disclosed by the invention.
Claims (10)
1. the method for manufacture of a polysilicon membrane comprises:
Deposition of amorphous silicon;
Utilize this non-crystalline silicon of laser scanning, make the preliminary crystallization of non-crystalline silicon;
Crystallization is accomplished in non-crystalline silicon annealing to preliminary crystallization.
2. method of manufacture according to claim 1 wherein before the laser scanning non-crystalline silicon, is placed mask on non-crystalline silicon.
3. method of manufacture according to claim 2, wherein said mask have the transmission region of bar shaped or have the light hole array.
4. method of manufacture according to claim 3, wherein said light hole are circular or square.
5. according to the described method of manufacture of arbitrary claim in the claim 1 to 4, the energy density of wherein said laser is 200～350mJ.
6. according to the described method of manufacture of arbitrary claim in the claim 1 to 4, wherein laser is vertical with substrate plane.
7. according to the described method of manufacture of arbitrary claim in the claim 1 to 4, wherein the sweep velocity of laser is 1～5mm/s, and the pulse-repetition of laser is 200～900Hz.
8. according to the described method of manufacture of arbitrary claim in the claim 1 to 4, wherein anneal and in rare gas element, carry out.
9. method of manufacturing thin film transistor comprises:
Utilize the described method of claim 1 to process polysilicon membrane;
Utilize said polysilicon membrane to make thin film transistor as active layer.
10. the thin film transistor of processing by the described method of claim 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110307025 CN102505139A (en) | 2011-10-11 | 2011-10-11 | Manufacturing method of polysilicon film |
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| CN 201110307025 CN102505139A (en) | 2011-10-11 | 2011-10-11 | Manufacturing method of polysilicon film |
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| CN102505139A true CN102505139A (en) | 2012-06-20 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104790032A (en) * | 2015-03-16 | 2015-07-22 | 大连大学 | Method for laser pulse sputtering deposition preparation of polycrystalline silicon thin film |
| WO2017028543A1 (en) * | 2015-08-20 | 2017-02-23 | Boe Technology Group Co., Ltd. | Polycrystalline silicon thin film and method thereof, optical film, and thin film transistor |
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2011
- 2011-10-11 CN CN 201110307025 patent/CN102505139A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104790032A (en) * | 2015-03-16 | 2015-07-22 | 大连大学 | Method for laser pulse sputtering deposition preparation of polycrystalline silicon thin film |
| WO2017028543A1 (en) * | 2015-08-20 | 2017-02-23 | Boe Technology Group Co., Ltd. | Polycrystalline silicon thin film and method thereof, optical film, and thin film transistor |
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Application publication date: 20120620 |