CN102497086A - Parallel current-equalizing circuit - Google Patents
Parallel current-equalizing circuit Download PDFInfo
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- CN102497086A CN102497086A CN201110390174XA CN201110390174A CN102497086A CN 102497086 A CN102497086 A CN 102497086A CN 201110390174X A CN201110390174X A CN 201110390174XA CN 201110390174 A CN201110390174 A CN 201110390174A CN 102497086 A CN102497086 A CN 102497086A
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- parallel current
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- temperature coefficient
- negative temperature
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Abstract
The invention discloses a parallel current-equalizing circuit and relates to the field of high-frequency power electronic circuits. By adoption of the parallel current-equalizing circuit, steady-state current equalization can be realized without addition of a resistor into the circuit. The parallel current-equalizing circuit comprises a plurality of negative temperature coefficient semiconductors which are connected in parallel, and a plurality of conductive coils which are respectively connected with the negative temperature coefficient semiconductors in series, wherein the conductive coils have the same length and the same number of turns and are wound on the same magnetic core in the same direction to form coupling inductors of which dotted terminals are on the same side.
Description
Technical field
The present invention relates to the high-frequency power electronic circuit field, relate in particular to a kind of parallel current-sharing circuit.
Background technology
Raising along with power density in the high-frequency power electronic circuit; Single thyristor (Silicon Controlled Rectifier; SCR) or diode more and more be difficult to satisfy the needs of current stress and heat radiation, need to use N (N >=2) individual thyristor and diode parallel connection use, and thyristor and diode all belong to negative temperature coefficient semiconductor; Directly parallel connection is used, and adopts series resistance or different name end coupling inductance usually so that thyristor and diode parallel current-sharing.Adopt the mode of series resistance need be in circuit extra increase resistance, adopt the mode of series connection different name end coupling inductance (end of the same name of coupling inductance is at heteropleural) then can't realize the stable state current-sharing.
Summary of the invention
Embodiments of the invention provide a kind of parallel current-sharing circuit, need not in circuit extra increase resistance and can realize the stable state current-sharing.
For solving the problems of the technologies described above, embodiments of the invention adopt following technical scheme:
A kind of parallel current-sharing circuit comprises:
A plurality of negative temperature coefficient semiconductors of parallel connection;
A plurality of conductive coils of connecting with said a plurality of negative temperature coefficient semiconductors respectively;
Said a plurality of conductive coil length is identical, the number of turn is identical and be wrapped in same magnetic core with identical direction, forms the coupling inductance of end of the same name in the same side.
Under the stable state, electric current increases in a certain branch road, and according to Lenz's law, coupling inductance hinders the increase of electric current in the above-mentioned branch road, and is corresponding, hinders reducing of electric current in other branch roads.Because above-mentioned a plurality of conductive coil length are identical, the number of turn is identical; Therefore the impedance Z of each conductive coil is identical, and because each conductive coil is wrapped in same magnetic core with identical direction, forms the coupling inductance of end of the same name in the same side; Therefore the voltage U of each conductive coil is also identical; According to the relation between electric current I and voltage U and the impedance Z, promptly I=U/Z can know that the electric current that flows through every conductive coil is identical; Promptly realized the parallel current-sharing under a plurality of diode stable states, and need be in circuit extra increase resistance.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the parallel current-sharing circuit diagram of a kind of diode in the embodiment of the invention;
Fig. 2 is the parallel current-sharing circuit diagram of a kind of thyristor in the embodiment of the invention.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
As shown in Figure 1, the embodiment of the invention provides a kind of parallel current-sharing circuit, comprising: a plurality of negative temperature coefficient semiconductors of parallel connection, and the negative temperature coefficient semiconductor in the present embodiment is diode D; Be a plurality of conductive coils that diode D connects with a plurality of negative temperature coefficient semiconductors respectively; A plurality of conductive coil length are identical, the number of turn is identical and be wrapped in same magnetic core with identical direction, form the coupling inductance L of end of the same name in the same side.
Under the stable state, electric current increases in a certain branch road, and according to Lenz's law, coupling inductance hinders the increase of electric current in the above-mentioned branch road, and is corresponding, hinders reducing of electric current in other branch roads, forces the electric current of all branch roads to be tending towards equal.Because above-mentioned a plurality of conductive coil length are identical, the number of turn is identical; Therefore the impedance Z of each conductive coil is identical, and because each conductive coil is wrapped in same magnetic core with identical direction, forms the coupling inductance of end of the same name in the same side; Therefore the voltage U of each conductive coil is also identical; Can not cause cancelling out each other of self induction voltage and mutual voltage at heteropleural because of end of the same name, according to the relation between electric current I and voltage U and the impedance Z, i.e. I=U/Z; Can know that the electric current that flows through every conductive coil is identical, promptly realize the parallel current-sharing under a plurality of diode stable states.Owing to inductance is just arranged usually in the side circuit, therefore only need the inductance that has had in the circuit be used for the parallel current-sharing under the stable state, compared with prior art, need be in circuit extra increase resistance.Need to prove, be the example explanation embodiment of the invention with the parallel connection of two diodes only among Fig. 1, and the mode of plural diode parallel connection is identical therewith.
Further, negative temperature coefficient semiconductor can also be as shown in Figure 2 except that can be for the diode D, is thyristor SCR.
Realized a plurality of thyristors or the diode parallel current-sharing under stable state.Owing to inductance is just arranged usually in the side circuit, therefore only need the inductance that has had in the circuit be used for this programme can realize the parallel current-sharing under the stable state, compared with prior art, need be in circuit extra increase resistance.
The above; Be merely embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; Can expect easily changing or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of said claim.
Claims (2)
1. a parallel current-sharing circuit is characterized in that, comprising:
A plurality of negative temperature coefficient semiconductors of parallel connection;
A plurality of conductive coils of connecting with said a plurality of negative temperature coefficient semiconductors respectively;
Said a plurality of conductive coil length is identical, the number of turn is identical and be wrapped in same magnetic core with identical direction, forms the coupling inductance of end of the same name in the same side.
2. parallel current-sharing circuit according to claim 1 is characterized in that,
Said negative temperature coefficient semiconductor is thyristor or diode.
Priority Applications (1)
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CN201110390174XA CN102497086A (en) | 2011-11-30 | 2011-11-30 | Parallel current-equalizing circuit |
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CN201110390174XA CN102497086A (en) | 2011-11-30 | 2011-11-30 | Parallel current-equalizing circuit |
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CN102497086A true CN102497086A (en) | 2012-06-13 |
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CN201110390174XA Pending CN102497086A (en) | 2011-11-30 | 2011-11-30 | Parallel current-equalizing circuit |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109861506A (en) * | 2019-01-16 | 2019-06-07 | 中国科学院电工研究所 | A kind of parallel current-sharing structure of silicon carbide MOSFET |
CN111224533A (en) * | 2019-12-04 | 2020-06-02 | 石家庄通合电子科技股份有限公司 | Automatic current sharing circuit and method for negative temperature diode |
CN111463765A (en) * | 2020-02-26 | 2020-07-28 | 广东电网有限责任公司电力科学研究院 | Superconducting direct current limiter and superconducting direct current limiting device |
CN113676054A (en) * | 2021-07-09 | 2021-11-19 | 西安电子科技大学 | Flyback converter with parallel current sharing |
CN116995640A (en) * | 2023-09-25 | 2023-11-03 | 苏州元脑智能科技有限公司 | Forced current sharing circuit, chip, main board and electronic equipment |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5586372A (en) * | 1978-12-20 | 1980-06-30 | Hitachi Ltd | Semiconductor device |
-
2011
- 2011-11-30 CN CN201110390174XA patent/CN102497086A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5586372A (en) * | 1978-12-20 | 1980-06-30 | Hitachi Ltd | Semiconductor device |
Non-Patent Citations (2)
Title |
---|
游旭安等: "带平衡电抗器的双反星形可控硅整流电路及设计", 《三明学院学报》 * |
童军: "并联晶闸管电流的测量和均流方法", 《煤矿自动化》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109861506A (en) * | 2019-01-16 | 2019-06-07 | 中国科学院电工研究所 | A kind of parallel current-sharing structure of silicon carbide MOSFET |
CN111224533A (en) * | 2019-12-04 | 2020-06-02 | 石家庄通合电子科技股份有限公司 | Automatic current sharing circuit and method for negative temperature diode |
CN111463765A (en) * | 2020-02-26 | 2020-07-28 | 广东电网有限责任公司电力科学研究院 | Superconducting direct current limiter and superconducting direct current limiting device |
CN113676054A (en) * | 2021-07-09 | 2021-11-19 | 西安电子科技大学 | Flyback converter with parallel current sharing |
CN116995640A (en) * | 2023-09-25 | 2023-11-03 | 苏州元脑智能科技有限公司 | Forced current sharing circuit, chip, main board and electronic equipment |
CN116995640B (en) * | 2023-09-25 | 2024-02-02 | 苏州元脑智能科技有限公司 | Forced current sharing circuit, chip, main board and electronic equipment |
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Application publication date: 20120613 |