CN102496611B - For the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer - Google Patents
For the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer Download PDFInfo
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- CN102496611B CN102496611B CN201110459697.5A CN201110459697A CN102496611B CN 102496611 B CN102496611 B CN 102496611B CN 201110459697 A CN201110459697 A CN 201110459697A CN 102496611 B CN102496611 B CN 102496611B
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Abstract
The invention provides a kind of for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, comprising: many wires, described many wires are back-shaped polyline shaped; Dielectric layer, described dielectric layer, between described many wires, makes between described many wires mutually isolated.The reliability can carrying out metal interconnecting wires in integrated circuit last part technology for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer by this detects; Carry out the checking of OPC correction result; Also can be used as the electrode layer having heat absorption function concurrently in MEMS thermal imaging system, be unlikely to again to be short-circuited while obtaining large endotherm area.
Description
Technical field
The present invention relates to technical field of integrated circuits, particularly a kind of for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer.
Background technology
Integrated circuit (IntegratedCircuit, IC) is according to the evolution of Moore's Law, and integrated level improves constantly, and characteristic size constantly reduces.And constantly reducing along with characteristic size, in last part technology (BackEndofLine, BEOL), the reliability of metal interconnecting wires is also faced with more and more acid test.In prior art, snakelike/fork-shaped (Meander/Fork) structure is the structure of conventional inspection metal interconnecting wires reliability.
Please refer to Fig. 1, it is the structural representation of snakelike/fork-shaped (Meander/Fork) structure.As shown in Figure 1, snakelike/fork configuration 1 comprises: serpentine wire 10 and fork-shaped metal wire 11, certainly, between described serpentine wire 10 and fork-shaped metal wire 11, there is dielectric layer (not shown in figure 1) to isolate, described snakelike/fork configuration 1 is arranged on substrate 100, and described substrate 100 is formed with multiple device (not shown in figure 1).
When utilizing snakelike/fork configuration 1 to check the reliability of metal interconnecting wires, by applying certain voltage at serpentine wire 10 two ends, can detect on metal wire whether there is disconnection; Also can by applying voltage respectively on serpentine wire 10 and fork-shaped metal wire 11, detect the electric leakage that whether to there is bridge joint between Dense metal lines and cause.Because mask aligner is in the exposure capability difference to some extent of X-direction and Y-direction, general design two mutually perpendicular snakelike/fork configuration 1 verifies reliability, the position relationship between as shown in Figure 1 two snakelike/fork configurations 1.
In integrated circuit technology, when the live width of light mask image is much smaller than the wavelength of exposure light source, due to the optical approach effect that the diffraction etc. of light causes, the figure that light shield is projected to above substrate can vary widely, even can exceed specification, at this moment need that OPC (OpticalProximityCorrection) is carried out to light mask image and revise.In order to verify the result of OPC, some specific structures can be put in domain (Layout) to check whether the rear optical approach effect of exposure is eliminated.
In addition, existing microelectromechanical systems (Micro-Electro-MechanicalSystem, MEMS) electrical connection in generally adopts the metal interconnected mode of similar CMOS back segment, and in the application of some MEMS thermal imaging systems, electrode layer is also used as heat absorbing layer.In this type of application, the heat that electrode layer absorbs is directly passed to thermally sensitive layer, is reached the object of thermal imaging by the change of the electric property detecting thermally sensitive layer.The structure having the electrode layer of heat absorption function concurrently usually adopt in similar CMOS snakelike/fork-shaped (Meander/Fork) structure, to make to be unlikely to again to be short-circuited while obtaining large endotherm area.For this structure, do not consider the homogeneity question absorbed heat in general design, this by increasing the interference of signal, is lowered into the signal to noise ratio of picture when pixel (image unit) is larger.
Summary of the invention
The object of the present invention is to provide a kind of for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, to realize the above-mentioned several functions mentioned.The described reliability testing for integrated circuit metal interconnection or the structure of MEMS electrode layer comprise:
Many wires, described many wires are back-shaped polyline shaped;
Dielectric layer, described dielectric layer, between described many wires, makes between described many wires mutually isolated.
Optionally, described in the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, described many wires all in the same direction around folding, and set with each other.
Optionally, described in the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, the quantity of described metal wire is two, and the end points of a wires and the end points of another wires are oppositely arranged.
Optionally, described in the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, the quantity of described metal wire is two, and a wires is oppositely arranged near the first paragraph of end points near the first paragraph of end points and another wires, each section that two wires are corresponding is afterwards also for being oppositely arranged.
Optionally, described in the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, two wires are centrosymmetric arrangement.
Optionally, described in the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, the metal wire be nested together equally is arranged.
Optionally, described in the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, the metal wire be nested together from the center to edge in by close to white-out cloth.
Optionally, described in the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, the metal wire be nested together from the center to edge in by dredging to solid matter cloth.
Optionally, described in the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, described structure is used for integrated circuit post-channel interconnection, and the material of described metal wire is Al or Cu, and the material of described dielectric layer is SiO
2or low-K material, described metal live width is 0.02 micron ~ 0.5 micron.
Optionally, described in the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, described structure is used for the electrode layer having heat absorption function in MEMS thermal imaging system concurrently, the material of described metal wire is one or more in Ti, Ta, Pt, TiN, TaN, the material of described dielectric layer is heat-sensitive material, and described metal live width is 0.5 micron ~ 5 microns.
By provided by the invention for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, the above-mentioned several functions mentioned can be realized.Concrete, when carrying out the reliability detection of metal interconnecting wires in integrated circuit last part technology for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer described in utilizing, by applying certain voltage at back-shaped polyline shaped metal wire two ends, can detect on metal wire whether there is disconnection; Also can by applying voltage respectively on many back-shaped polyline shaped metal wires, detect the electric leakage that whether to there is bridge joint between Dense metal lines and cause.In addition, because back-shaped polyline shaped metal wire has the multistage of X, Y both direction, therefore, when the exposure capability that mask aligner has X-direction and a Y-direction to some extent difference, also can only by carrying out effectively, reliably detecting for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer described in one.
When needing the checking carrying out OPC correction result, this back-shaped polyline shaped metal wire being used for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer is owing to having the multistage of X, Y both direction, therefore, easily by the distance between the multistage that confirms X-direction or the multistage spacing of Y-direction, the result that OPC revises can be verified.
Meanwhile, the structure of this reliability testing or MEMS electrode layer being used for integrated circuit metal interconnection also can, as the electrode layer having heat absorption function concurrently in MEMS thermal imaging system, be unlikely to again to be short-circuited while obtaining large endotherm area.Further, by the density arrangement between the metal wire that is nested together, can make heat absorption evenly, thus reduce the interference of signal when pixel (image unit) is larger, improve the signal to noise ratio of imaging.
Accompanying drawing explanation
Fig. 1 is the structural representation of snakelike/fork-shaped (Meander/Fork) structure;
Fig. 2 be the embodiment of the present invention one for the reliability testing of integrated circuit metal interconnection or the structural representation of structure of MEMS electrode layer;
Fig. 3 be the embodiment of the present invention for the reliability testing of integrated circuit metal interconnection or the structural representation of structure of MEMS electrode layer;
Fig. 4 be the embodiment of the present invention for the reliability testing of integrated circuit metal interconnection or the structural representation of structure of MEMS electrode layer;
Fig. 5 be the embodiment of the present invention two for the reliability testing of integrated circuit metal interconnection or the structural representation of structure of MEMS electrode layer;
Fig. 6 be the embodiment of the present invention three for the reliability testing of integrated circuit metal interconnection or the structural representation of structure of MEMS electrode layer.
Embodiment
Be described in further detail for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer provided by the invention below in conjunction with the drawings and specific embodiments.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Embodiment one
Please refer to Fig. 2, its be the embodiment of the present invention one for the reliability testing of integrated circuit metal interconnection or the structural representation of structure of MEMS electrode layer.As shown in Figure 2, comprise for the reliability testing of integrated circuit metal interconnection or the structure 2 of MEMS electrode layer:
Many wires, described many wires are back-shaped polyline shaped;
Dielectric layer, described dielectric layer, between described many wires, makes between described many wires mutually isolated.
It should be noted that, described back-shaped polyline shaped refers to: the shape of this metal wire is (in other words this metal wire shrink in the shape of a spiral inwardly around) that outwards lay out in the shape of a spiral, namely this metal wire can be transferred, but corner can be greater than 0 degree to be less than 180 degree arbitrarily angled and can be curved corner.
In the present embodiment, the quantity of described metal wire is two, is respectively back-shaped polyline shaped metal wire 20 and back-shaped polyline shaped metal wire 21.Back-shaped polyline shaped metal wire 20 and back-shaped polyline shaped metal wire 21 all in the counterclockwise direction around folding, and set with each other.Further, back-shaped polyline shaped metal wire 20 is oppositely arranged near the first paragraph of terminal A near the first paragraph of terminal B and back-shaped polyline shaped metal wire 21, the arrangement and two back-shaped polyline shaped metal wires are centrosymmetric.
Certainly, in other embodiments of the invention, also can the end points of described two back-shaped polyline shaped metal wires be oppositely arranged.In addition, described back-shaped polyline shaped metal wire can be more, such as 3 (as shown in Figure 3, three back-shaped polyline shaped metal wires have been shown in Fig. 3, be respectively back-shaped polyline shaped metal wire 22, back-shaped polyline shaped metal wire 23, back-shaped polyline shaped metal wire 24), 4 ... in addition, angle between adjacent two sections of described back-shaped polyline shaped metal wire is not limited to 90 degree (as described in Figure 4), and can be curved corner (being similar to the projection of spiral stairs).
The present invention is mainly through utilizing many back-shaped polyline shaped metal wires, to realize and to realize the several functions mentioned in background technology better, in order to outstanding emphasis of the present invention, and the shape of many wires and mutual position relationship, in accompanying drawing of the present invention, dielectric layer is not illustrated.
It should be noted that, described back-shaped polyline shaped metal wire 20 and back-shaped polyline shaped metal wire 21 are all formed on substrate 200, and described substrate 200 is formed with multiple device.Concrete, first can form a metal level by physical gas-phase deposition (PhysicalVaporDeposition, PVD) on described substrate 200; Then, by photoetching and etch described metal level, form back-shaped polyline shaped metal wire 20 and back-shaped polyline shaped metal wire 21; Then, dielectric layer is formed, the described dielectric layer described back-shaped polyline shaped metal wire 20 of isolation and back-shaped polyline shaped metal wire 21.About the formation of described metal wire and dielectric layer, realize by existing kinds of processes, the application does not repeat them here.
When carrying out the reliability detection of metal interconnecting wires in integrated circuit last part technology for the reliability testing of integrated circuit metal interconnection or the structure 2 of MEMS electrode layer described in utilizing, by applying certain voltage at back-shaped polyline shaped metal wire two ends, can detect on metal wire whether there is disconnection; Also can by applying voltage respectively on many back-shaped polyline shaped metal wires, detect the electric leakage that whether to there is bridge joint between Dense metal lines and cause.
Concrete, certain voltage can be applied in the terminal B of back-shaped polyline shaped metal wire 20 and end points D, thus the situation whether metal wire having disconnection can be detected; Also can by applying voltage respectively in the terminal B of back-shaped polyline shaped metal wire 20 and the terminal A of back-shaped polyline shaped metal wire 21, detect the electric leakage that whether to there is bridge joint between Dense metal lines and cause.
In the present embodiment, by getting through hole in the dielectric layer, terminal A, B, C, D are drawn, using the test pin detected as the reliability of metal interconnecting wires in integrated circuit last part technology.
At this, because back-shaped polyline shaped metal wire 20,21 has the multistage of X, Y both direction, therefore, when the exposure capability that mask aligner has X-direction and a Y-direction to some extent difference, also can only by carrying out effectively, reliably detecting for the reliability testing of integrated circuit metal interconnection or the structure 2 of MEMS electrode layer described in one.
When due to live width smaller, need to carry out OPC correction, and during the result checking OPC to revise, this back-shaped polyline shaped metal wire 20,21 being used for the reliability testing of integrated circuit metal interconnection or the structure 2 of MEMS electrode layer is owing to having the multistage of X, Y both direction, therefore, easily by the distance between the multistage that confirms X-direction or the multistage spacing of Y-direction, the result that OPC revises can be verified.
When carrying out the reliability detection of metal interconnecting wires in integrated circuit last part technology for the reliability testing of integrated circuit metal interconnection or the structure 2 of MEMS electrode layer described in utilizing, the material of described back-shaped polyline shaped metal wire 20,21 is Al or Cu, and the material of described dielectric layer is SiO
2or low-K (low-k) material.
The structure 2 of this reliability testing or MEMS electrode layer of being used for integrated circuit metal interconnection also can as the electrode layer in MEMS thermal imaging system with heat absorption function, concrete, thermally sensitive layer is formed on the upper strata of back-shaped polyline shaped metal wire 20,21 or lower floor's (referring to the relative position of rete herein), the heat that back-shaped polyline shaped metal wire 20,21 absorbs passes to thermally sensitive layer, apply voltage by end points C, D at back-shaped polyline shaped metal wire 20,21, just can detect the heat radiation situation of thermal source.In the MEMS thermal imager be made up of some pixel arrays, the thermal imaging to detected target can be formed.By this reliability testing for integrated circuit metal interconnection or the structure 2 of MEMS electrode layer, be unlikely to again to be short-circuited while obtaining large endotherm area.
When utilize this for integrated circuit metal interconnection reliability testing or MEMS electrode layer structure 2 as in MEMS thermal imaging system have the electrode layer of heat absorption function concurrently time, the material of described back-shaped polyline shaped metal wire 20,21 to be the material of described metal wire be in the materials such as Ti, Ta, Pt, TiN, TaN one or more, the material of described dielectric layer is heat-sensitive material, as boron mixing non-crystal silicon or vanadium oxide (V
2o
5) etc.
In addition, in order to improve the reliability of back-shaped polyline shaped metal wire 20,21, its live width preferably 0.5 micron ~ 5 microns.
Embodiment two
Please refer to Fig. 5, its be the embodiment of the present invention two for the reliability testing of integrated circuit metal interconnection or the structural representation of structure of MEMS electrode layer.In the present embodiment, difference for the reliability testing interconnected for integrated circuit metal of the reliability testing of integrated circuit metal interconnection or the structure 3 of MEMS electrode layer and embodiment one or the structure 2 of MEMS electrode layer is, the back-shaped polyline shaped metal wire 20,21 be nested together in embodiment one is equally arranged, and the back-shaped polyline shaped metal wire 30,31 be nested together in the present embodiment is to white-out cloth by close from the center to edge.
Thus, when needing the checking carrying out OPC correction result, the structure 3 of this reliability testing or MEMS electrode layer of being used for integrated circuit metal interconnection, by confirmation back-shaped polyline shaped metal wire 30, the 31 unequal distance of multistage in X direction or the unequal distance of multistage of Y-direction, can give to verify more reliably to the result that OPC revises.
Simultaneously, when utilize this for integrated circuit metal interconnection reliability testing or MEMS electrode layer structure 3 as in MEMS thermal imaging system have the electrode layer of heat absorption function concurrently time, by the density arrangement between the back-shaped polyline shaped metal wire 30,31 that is nested together, reduce the interference of signal when pixel (image unit) is larger, improve the signal to noise ratio of imaging.
Embodiment three
Please refer to Fig. 6, its be the embodiment of the present invention three for the reliability testing of integrated circuit metal interconnection or the structural representation of structure of MEMS electrode layer.In the present embodiment, difference for the reliability testing interconnected for integrated circuit metal of the reliability testing of integrated circuit metal interconnection or the structure 4 of MEMS electrode layer and embodiment one or the structure 2 of MEMS electrode layer is, the back-shaped polyline shaped metal wire 20,21 be nested together in embodiment one is equally arranged, and the back-shaped polyline shaped metal wire 30,31 be nested together in the present embodiment is by dredging to solid matter cloth from the center to edge.
Thus, when needing the checking carrying out OPC correction result, the structure 4 of this reliability testing or MEMS electrode layer of being used for integrated circuit metal interconnection, by confirmation back-shaped polyline shaped metal wire 40, the 41 unequal distance of multistage in X direction or the unequal distance of multistage of Y-direction, can give to verify more reliably to the result that OPC revises.
Simultaneously, when having the electrode layer of heat absorption function concurrently in utilizing this reliability testing for integrated circuit metal interconnection or the structure 4 of MEMS electrode layer as MEMS thermal imaging system, by the density arrangement between the back-shaped polyline shaped metal wire 40,41 that is nested together, reduce the interference of signal when pixel (image unit) is larger, improve the signal to noise ratio of imaging.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection range of claims.
Claims (7)
1., for the reliability testing of integrated circuit metal interconnection or a structure for MEMS electrode layer, it is characterized in that, comprising:
Many wires, described many wires are back-shaped polyline shaped; Described many wires all in the same direction around folding, and set with each other; The quantity of described metal wire is two, and the end points of a wires and the end points of another wires are oppositely arranged, or the quantity of described metal wire is two, and a wires is oppositely arranged near the first paragraph of end points near the first paragraph of end points and another wires, each section that two wires are corresponding is afterwards also for being oppositely arranged;
Dielectric layer, described dielectric layer, between described many wires, makes between described many wires mutually isolated.
2. as claimed in claim 1 for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, it is characterized in that, two wires are centrosymmetric arrangement.
3., as claimed in claim 1 for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, it is characterized in that, the metal wire be nested together equally is arranged.
4. as claimed in claim 1 for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, it is characterized in that, the metal wire be nested together is to white-out cloth by close from the center to edge.
5. as claimed in claim 1 for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, it is characterized in that, the metal wire be nested together is by dredging to solid matter cloth from the center to edge.
6., as claimed in claim 1 for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, it is characterized in that, described structure is used for integrated circuit post-channel interconnection, and the material of described metal wire is Al or Cu, and the material of described dielectric layer is SiO
2or low-K material, described metal live width is 0.02 micron ~ 0.5 micron.
7. as claimed in claim 1 for the reliability testing of integrated circuit metal interconnection or the structure of MEMS electrode layer, it is characterized in that, described structure is used for the electrode layer having heat absorption function in MEMS thermal imaging system concurrently, the material of described metal wire is one or more in Ti, Ta, Pt, TiN, TaN, the material of described dielectric layer is heat-sensitive material, and described metal live width is 0.5 micron ~ 5 microns.
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| CN103545294B (en) * | 2012-07-12 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor detection structure and detection method |
| CN103871988A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Annular coherent and bridge layout structures and verification method for wire open circuit and short circuit |
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| CN102034794A (en) * | 2009-09-28 | 2011-04-27 | 中芯国际集成电路制造(上海)有限公司 | Test structure and method for testing semiconductor substrate |
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| KR100408819B1 (en) * | 2000-05-15 | 2003-12-11 | 학교법인 포항공과대학교 | Method for fabrication of a tilt sensor using micro electro mechanical system technology |
| US7851793B2 (en) * | 2006-11-07 | 2010-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Test structure with TDDB test pattern |
| US7520173B2 (en) * | 2006-12-06 | 2009-04-21 | Electronics And Telecommunications Research Institute | Interdigitated electrode for electronic device and electronic device using the same |
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