CN102496547A - Addressing electrode in plasma display screen and preparation method thereof - Google Patents
Addressing electrode in plasma display screen and preparation method thereof Download PDFInfo
- Publication number
- CN102496547A CN102496547A CN2011104580727A CN201110458072A CN102496547A CN 102496547 A CN102496547 A CN 102496547A CN 2011104580727 A CN2011104580727 A CN 2011104580727A CN 201110458072 A CN201110458072 A CN 201110458072A CN 102496547 A CN102496547 A CN 102496547A
- Authority
- CN
- China
- Prior art keywords
- metal
- electrode
- electrode part
- preparation
- addressing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses an addressing electrode in a plasma display screen and a preparation method thereof. The preparation method comprises the following steps: forming at least a layer of a first electrode part on a glass substrate, wherein, the first electrode part is formed by first metal sputtering; dipping the glass substrate whose surface is provided with the first electrode part into a second metal solution, and forming a second electrode part on a surface of the first electrode part, wherein chemical activity of second metal is less than chemical activity of first metal. The invention provides the addressing electrode in the plasma display screen and the preparation method thereof, ion displacement is carried out through employing a metal ion with relatively poor chemical activity and a metal layer formed on the surface of the glass substrate through sputtering, at least one time of steps of forming the metal layer through sputtering is reduced, technology step is simplified, investment of technology and material is reduced, and cost is reduced. Simultaneously, yield rate of the addressing electrode prepared by the method is high, conductivity of the product is excellent, and chemical performance is stable.
Description
Technical field
The present invention relates to the plasma panel field, especially relate to addressing electrode and preparation method thereof in a kind of plasma panel.
Background technology
In the plasma panel manufacture process, an important manufacturing process of addressing electrode is the metal sputtering method, chooses suitable target, and the method through sputter can form addressing electrode at metacoxal plate formation metallic diaphragm on glass through technologies such as exposure imaging strippings.Yet this process has serious drawback.
At present; In the process of addressing electrode, adopt the mode of multilayer sputter usually in the preparation plasma panel, promptly use the composite construction of multiple metal; For example use chromium-copper chromium (Cr-Cu-Cr) electrode, this is because single metal is difficult to satisfy simultaneously excellent conductivity, low, the stable chemical performance of cost.Yet multi-layer electrode structure causes complex process, and cost and yield are all had certain influence.
Summary of the invention
The object of the invention is to overcome that multi-layer electrode structure causes complex process in the prior art, and cost and yield are all had the deficiency of certain influence, and addressing electrode and preparation method thereof in a kind of plasma panel is provided.
In one aspect of the invention, the preparation method of addressing electrode in a kind of plasma panel is provided, has may further comprise the steps: on glass substrate, form one deck first electrode part at least, first electrode part is formed by first metal sputtering; The glass substrate that the surface is provided with first electrode part is immersed in second metallic solution, forms second electrode part on the surface of first electrode part; The chemism of second metal is less than first metal.
Further, the step of above-mentioned formation first electrode comprises: first metal sputtering on glass substrate, is formed the first metal layer; According to required form, the first metal layer exposure, development, etching are formed first electrode part.
Further, above-mentioned first metal is to be selected from least a in the group of being made up of Mg, Am, Dy, Ho, Er, Tm, Lu, Sc, Pu, Th, Np, Be, U, Hf, Al, Ti, Zr, V, Mn, Sm, Nb, Zn, Cr, Ga, Fe, Cd, In, Tl, Co, Ni, Mo, Sn, Tm, Pb, Cu, Tc, Po.
Further, above-mentioned first metal is Cr or Cu.
Further, above-mentioned second metal is Ag, and the concentration of second metallic solution is 0.015～0.08mol/L.
In another aspect of the present invention, the addressing electrode in a kind of plasma panel also is provided, comprising: one deck first electrode part at least, form by the first metal material sputter, be arranged on the glass substrate with being required form; Second electrode part is wrapped in the periphery of said first electrode part, is formed by second metal material and first metal replacement that is positioned at the outer surface of outermost said first electrode part; The chemism of second metal is less than first metal.
Further, above-mentioned first metal is to be selected from least a in the group of being made up of Mg, Am, Dy, Ho, Er, Tm, Lu, Sc, Pu, Th, Np, Be, U, Hf, Al, Ti, Zr, V, Mn, Sm, Nb, Zn, Cr, Ga, Fe, Cd, In, Tl, Co, Ni, Mo, Sn, Tm, Pb, Cu, Tc, Po.
Further, above-mentioned first metal is Cr or Cu.
Further, above-mentioned second metal is Ag.
Further, the thickness of above-mentioned addressing electrode is 0.5-10 μ m, and width is 30-120 μ m, and wherein the thickness of second electrode part is 0.01 μ-5 μ m.
In another aspect of the present invention, a kind of plasma panel also is provided, it addressing electrode that comprises is above-mentioned addressing electrode.
Beneficial effect of the present invention: addressing electrode and preparation method thereof in the plasma panel provided by the present invention; Through adopting the metal level that sputter forms on relatively poor relatively metal ion of chemism and the glass baseplate surface to carry out ion exchange; At least reduced the step that a sputter forms metal level; Simplify processing step, and reduced the input of technology and material, reduced cost.Simultaneously, the yield that this method prepares addressing electrode is high, and the excellent conductivity of product, stable chemical performance.
Except top described purpose, feature and advantage, the present invention also has other purpose, feature and advantage.To do further detailed explanation to the present invention with reference to figure below.
Description of drawings
Accompanying drawing constitute this specification a part, be used for further understanding the present invention, accompanying drawing shows the preferred embodiments of the present invention, and is used for explaining principle of the present invention with specification.Among the figure:
Fig. 1 shows the structural representation according to first electrode part in the embodiment of the invention addressing electrode; And
Fig. 2 shows the composite construction sketch map according to first electrode part in the addressing electrode of the embodiment of the invention and second electrode part.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below; Technical scheme in the embodiments of the invention is carried out detailed explanation; But following embodiment and accompanying drawing only are in order to understand the present invention; And can not limit the present invention, the multitude of different ways that the present invention can be defined by the claims and cover is implemented.
In a kind of typical embodiment of the present invention, the preparation method of addressing electrode may further comprise the steps in a kind of plasma panel: on glass substrate, form one deck first electrode part at least, first electrode part is formed by first metal sputtering; The glass substrate that the surface is provided with first electrode part is immersed in second metallic solution, forms second electrode part on the surface of first electrode part; The chemism of second metal is less than first metal.
Addressing electrode and preparation method thereof in the above-mentioned plasma panel; Through adopting the metal level that sputter forms on relatively poor relatively metal ion of chemism and the glass baseplate surface to carry out ion exchange; At least reduced the step that a sputter forms metal level; Simplify processing step, and reduced the input of technology and material, reduced cost.Simultaneously, the yield that this method prepares addressing electrode is high, and the excellent conductivity of product, stable chemical performance.
Preferably, the step of above-mentioned formation first electrode comprises: first metal sputtering on glass substrate, is formed the first metal layer; According to required form, the first metal layer exposure, development, etching are formed first electrode part.This first electrode part can be a sandwich construction, sputter different metallic material respectively in every layer.
Preferably, first metal is to be selected from least a in the group of being made up of Mg, Am, Dy, Ho, Er, Tm, Lu, Sc, Pu, Th, Np, Be, U, Hf, Al, Ti, Zr, V, Mn, Sm, Nb, Zn, Cr, Ga, Fe, Cd, In, Tl, Co, Ni, Mo, Sn, Tm, Pb, Cu, Tc, Po.More preferably, first metal is Cr or Cu.Adopt Cr or Cu metal can make excellent conductivity, the stable chemical performance of addressing electrode.
Preferably, second metal is Ag.The use amount of Ag metal is extremely low, and whole cost is lower, helps reducing the preparation cost of plasma panel, and the chemism of Ag metal is relatively poor, and common metal can both carry out displacement reaction with it.
In the preparation method of above-mentioned addressing electrode; The glass substrate that the surface is provided with first electrode part is immersed in the process of carrying out displacement reaction in second metallic solution; The concentration of second metallic solution does not have specific (special) requirements, as long as be suitable for the requirement of this displacement reaction.Preferably, the concentration of second metallic solution is 0.015～0.08mol/L.In order to accelerate displacement reaction, also can for example, excite metallochemistry active through modes such as heating, energising or conciliation solution acidities, and then improve reaction speed through taking the proper technique means.When adopting the mode of reconciling solution acidity, the pH value of preferred solution is 5.8-6.2.These methods all are that those skilled in the art can rationally use.In the present invention as long as form second metal level on the surface of first electrode part.
Preparation method at addressing electrode provided by the present invention has proposed a kind of chemically active gap of utilizing between metallic element and the metallic element; On the basis of containing at least a metal level, form second kind of metal level through the chemical replacement method on the surface of first kind of metal level with second kind of metal.This method is with respect to existing sputtering method, and not only technology is simple, cost is low, and the product yields is high, and quality is high.
As depicted in figs. 1 and 2, in a kind of typical embodiment of the present invention, the addressing electrode in a kind of plasma panel is provided, this addressing electrode has composite construction, comprising: one deck first electrode part 2 and second electrode part 3 at least.First electrode part 2 is formed by the first metal material sputter, is arranged on the glass substrate with being required form; Second electrode part 3 is wrapped in the periphery of first electrode part 2, is formed by second metal material and first metal replacement that is positioned on the outer surface of outermost first electrode part 2; The chemism of second metal is less than first metal.
Addressing electrode with this structure includes at least two kinds of metal materials, makes its electric conductivity good; And; The outer surface of first electrode part is covered by second electrode part 3 fully, has only second electrode part 3 to expose outside, and this just makes addressing electrode have good chemical stability.
Wherein first metal is to be selected from least a in the group of being made up of Mg, Am, Dy, Ho, Er, Tm, Lu, Sc, Pu, Th, Np, Be, U, Hf, Al, Ti, Zr, V, Mn, Sm, Nb, Zn, Cr, Ga, Fe, Cd, In, Tl, Co, Ni, Mo, Sn, Tm, Pb, Cu, Tc, Po.Be preferably Cr or Cu.Wherein second metal includes but not limited to Ag.
Preferably, the thickness of above-mentioned addressing electrode is 0.5-10 μ m, and width is 30-120 μ m, and wherein the thickness of second electrode part is 0.01 μ-5 μ m.In this thickness range, second electrode part can form hard-packed metal level, and then guarantees the conductivity of addressing electrode, and chemical stability.
Adopt the prepared plasma panel of above-mentioned addressing electrode structures, better performances, and obtained prolongation useful life.
Below will combine embodiment 1-3 and Comparative Examples 1 to further specify the preparation method of addressing electrode in the plasma panel of the present invention and the beneficial effect of equipment.
The preparation method:
The Cr metal sputtering on said glass substrate, is formed the Cr layer, and according to required form, it is 0.49 μ m that the exposure of Cr layer, development, etching are formed thickness, and width is first electrode part of 29.98 μ m.
The glass substrate that the surface is provided with first electrode part is immersed in the Ag solution, Ag solution A g
+Content is 0.125mol/L, solution pH value 6, and 60 ℃ of temperature make the Cr metal and the Ag of first electrode part
+Displacement reaction takes place, form second electrode part that is included in the first electrode part outer surface, the thickness of second electrode part is 0.01 μ m.
The preparation method:
With the Cr metal sputtering on said glass substrate; Form the Cr layer, thickness 2.5 μ m, sputter Cu metal forms the Cu layer on the Cr layer; Thickness 4.5 μ m; Sputter Cu metal forms the Cr layer on the Cu layer, and thickness 2.5 μ m are first electrode part of 119 μ ms with the Cr layer with the exposure of Cu layer, development, etching formation width according to required form.
The glass substrate that the surface is provided with first electrode part is immersed in the Ag solution, Ag solution A g
+Content is 0.08mol/L, makes Cr metal and the Cu metal and the Ag on first electrode part surface
+Displacement reaction takes place, form second electrode part that is included in the first electrode part outer surface, the thickness of second electrode part is 0.5 μ m.
Embodiment 3
The preparation method:
The Cr metal sputtering on said glass substrate, is formed the Cu layer, and according to required form, it is 2 μ m that the exposure of Cr layer, development, etching are formed thickness, and width is first electrode part of 80 μ m.
The glass substrate that the surface is provided with first electrode part is immersed in the Ag solution, Ag solution A g
+Content is 0.03mol/L, makes the Cr metal and the Ag metal generation displacement reaction on first electrode part surface, forms second electrode part that is included in the first electrode part outer surface, and the thickness of second electrode part is 0.5 μ m.
Comparative Examples 1
The preparation method:
The Cr metal sputtering on glass substrate, is formed the Cr layer, and according to required form, it is 2 μ m that the exposure of Cr layer, development, etching are formed thickness, and width is first electrode part of 80 μ m.
Comparative Examples 2
The preparation method:
With the Cr metal sputtering on glass substrate; Forming thickness is the Cr layer of 0.5 μ m; Sputter Cu metal formation thickness is the Cu layer of 1 μ m on the Cr layer; To form thickness be the Cr layer of 0.5 μ m to sputter Cr metal on the Cu layer, according to required form, is first electrode part of 80 μ m with the Cr layer with the exposure of Cu layer, development, etching formation width.
Addressing electrode that embodiment 1-3 is prepared and the prepared addressing electrode of Comparative Examples 1-2 detect, and the result is as shown in table 1,
Table 1
| Conductivity | Chemical stability | The technology | Cost | |
| Embodiment | ||||
| 1 | Generally | Good | Be prone to | |
| Embodiment | ||||
| 2 | Fine | Good | Generally | High |
| Embodiment 3 | Good | Good | Be prone to | Low |
| Comparative Examples 1 | Difference | Good | Be prone to | Low |
| Comparative Examples 2 | Good | Good | Generally | Generally |
Can find out by content in the table 1:
In Comparative Examples 1 sputter one deck Cr layer because the resistivity of Cr is 12.9 * 10
-8Ω m, the resistivity of Cu is 1.586 * 10
-8Ω m, the resistivity of Ag is 1.678 * 10
-8Ω m.The conductance of chromium is obviously lower, thus the poorly conductive of the prepared electrode of Comparative Examples 1, and then can't use.Comparative Examples 2 is present conventional Cr-Cu-Cr technology, conductivity, and chemical property is good, but technology is complicated, and cost is higher.
Electrode prepared among the embodiment of the invention 1-3 under the prerequisite that does not increase technology difficulty and cost, has strengthened the conductivity and the chemical stability of electrode for electrode prepared in Comparative Examples 1 and 2.
Wherein, the conductivity and the chemical stability of the prepared electrode of embodiment 2 are best.The prepared electrode structure of the prepared electrode of embodiment 2 and Comparative Examples 2 is similar, is formed in the basic enterprising line replacement reaction of Cr-Cu-Cr electrode, and embodiment 2 prepared conductivity promote obviously, but its complex process, cost is also high.
The prepared electrode structure of embodiment 1 and 3 prepared electrodes and Comparative Examples 1 is similar, is formed in the enterprising line replacement reaction of Cr electrode layer.Embodiment 1 and 3 prepared under the prerequisite that does not increase technology difficulty and cost can reach and Comparative Examples 2 prepared cell conductivity and chemically stable much at one.Be suitable in suitability for industrialized production, application.
The conductivity of the electrode that embodiment 3 is prepared is superior to the conductivity of the prepared electrode of embodiment 1.This is because employed silver ion solution is a concentrated solution among the embodiment 1, because concentration is high, can cause reacting too fast, and silver-colored speed of separating out is fast, causes formed silver coating fine and close inadequately, so the conductivity lifting is little.And embodiment 3 selects lower concentration, and it is suitable with surface adsorption speed that silver is separated out, and can form fine and close silver metal layer, makes the conductivity of former chromium electrode become the growth of the order of magnitude.Both satisfied the conductivity requirement, chemical property is stable simultaneously, and technology is simple, and cost is low.
More than be merely the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various changes and variation.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. the preparation method of addressing electrode in the plasma panel is characterized in that, may further comprise the steps:
On glass substrate, form one deck first electrode part at least, said first electrode part is formed by first metal sputtering;
The glass substrate that the surface is provided with first electrode part is immersed in second metallic solution, forms second electrode part on the surface of said first electrode part;
The chemism of said second metal is less than said first metal.
2. preparation method according to claim 1 is characterized in that, the step that forms said first electrode comprises:
First metal sputtering on said glass substrate, is formed the first metal layer;
According to required form, said the first metal layer exposure, development, etching are formed said first electrode part.
3. preparation method according to claim 1; It is characterized in that said first metal is to be selected from least a in the group of being made up of Mg, Am, Dy, Ho, Er, Tm, Lu, Sc, Pu, Th, Np, Be, U, Hf, Al, Ti, Zr, V, Mn, Sm, Nb, Zn, Cr, Ga, Fe, Cd, In, Tl, Co, Ni, Mo, Sn, Tm, Pb, Cu, Tc, Po.
4. preparation method according to claim 3 is characterized in that, said first metal is Cr or Cu.
5. preparation method according to claim 1 is characterized in that, said second metal is Ag, and the concentration of said second metallic solution is 0.015～0.08mol/L.
6. the addressing electrode in the plasma panel is characterized in that, comprising:
At least one deck first electrode part (2) is formed by the first metal material sputter, is arranged on the glass substrate with being required form;
Second electrode part (3) is wrapped in the periphery of said first electrode part (2), is formed by second metal material and first metal replacement that is positioned at the outer surface of outermost said first electrode part (2);
The chemism of said second metal is less than said first metal.
7. addressing electrode according to claim 6; It is characterized in that said first metal is to be selected from least a in the group of being made up of Mg, Am, Dy, Ho, Er, Tm, Lu, Sc, Pu, Th, Np, Be, U, Hf, Al, Ti, Zr, V, Mn, Sm, Nb, Zn, Cr, Ga, Fe, Cd, In, Tl, Co, Ni, Mo, Sn, Tm, Pb, Cu, Tc, Po.
8. addressing electrode according to claim 7 is characterized in that, said first metal is Cr or Cu.
9. addressing electrode according to claim 6 is characterized in that, said second metal is Ag.
10. addressing electrode according to claim 6 is characterized in that, the thickness of said addressing electrode is 0.5-10 μ m, and width is 30-120 μ m, and the thickness of wherein said second electrode part is 0.01 μ-5 μ m.
11. a plasma panel is characterized in that, addressing electrode is each described addressing electrode among the claim 6-10 in the said plasma panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104580727A CN102496547A (en) | 2011-12-31 | 2011-12-31 | Addressing electrode in plasma display screen and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104580727A CN102496547A (en) | 2011-12-31 | 2011-12-31 | Addressing electrode in plasma display screen and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102496547A true CN102496547A (en) | 2012-06-13 |
Family
ID=46188355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104580727A Pending CN102496547A (en) | 2011-12-31 | 2011-12-31 | Addressing electrode in plasma display screen and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102496547A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1319245A (en) * | 1998-09-11 | 2001-10-24 | 肖特玻璃制造厂 | Method for assembling metal printed conductors as electrodes on channel plate for ultrawide plat screens |
| CN1582484A (en) * | 2000-02-22 | 2005-02-16 | 松下电器产业株式会社 | Plasma display panel and its manufacturing method |
| JP2005149987A (en) * | 2003-11-18 | 2005-06-09 | Sumitomo Rubber Ind Ltd | Front electrode for plasma display panel and manufacturing method thereof |
| CN1945778A (en) * | 2005-10-07 | 2007-04-11 | 三星Sdi株式会社 | Method for preparing plasma display panel |
| CN101137933A (en) * | 2005-03-11 | 2008-03-05 | Lg化学株式会社 | An LCD device having a silver capped electrode |
| CN101499397A (en) * | 2008-01-29 | 2009-08-05 | 李德杰 | Plasma display screen with high luminous efficiency and production method thereof |
-
2011
- 2011-12-31 CN CN2011104580727A patent/CN102496547A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1319245A (en) * | 1998-09-11 | 2001-10-24 | 肖特玻璃制造厂 | Method for assembling metal printed conductors as electrodes on channel plate for ultrawide plat screens |
| CN1582484A (en) * | 2000-02-22 | 2005-02-16 | 松下电器产业株式会社 | Plasma display panel and its manufacturing method |
| JP2005149987A (en) * | 2003-11-18 | 2005-06-09 | Sumitomo Rubber Ind Ltd | Front electrode for plasma display panel and manufacturing method thereof |
| CN101137933A (en) * | 2005-03-11 | 2008-03-05 | Lg化学株式会社 | An LCD device having a silver capped electrode |
| CN1945778A (en) * | 2005-10-07 | 2007-04-11 | 三星Sdi株式会社 | Method for preparing plasma display panel |
| CN101499397A (en) * | 2008-01-29 | 2009-08-05 | 李德杰 | Plasma display screen with high luminous efficiency and production method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102326746B1 (en) | Liquid crystal antenna and manufacturing method thereof | |
| CN104204274B (en) | With conductive and corrosion resistance characteristic coating | |
| US20020081478A1 (en) | Bipolar plate | |
| SE525704C2 (en) | Coated steel product of metal strip material comprising an electrically insulating layer doped with one or more alkali metals | |
| WO2007108932B1 (en) | Technique for preparing precursor films and compound layers for thin film solar cell fabrication and apparatus corresponding thereto | |
| CN113584441B (en) | Metal bipolar plate coating and preparation method thereof | |
| CN209786195U (en) | Liquid crystal antenna | |
| CN106410228B (en) | A kind of ordered catalyst layer and its preparation and application | |
| JP2005019205A (en) | Transparent conductive film and its manufacturing method | |
| CN102496547A (en) | Addressing electrode in plasma display screen and preparation method thereof | |
| KR20230133769A (en) | Method for manufacturing solar cell, solar module, and power generation system | |
| CN207862438U (en) | A kind of 3D glass heat bender wolfram steel plates having plane SH wave coating | |
| JP7031564B2 (en) | Manufacturing method of separator for fuel cell | |
| JP2023550677A (en) | Perovskite battery having multiple hole transport layers and method for manufacturing the same | |
| KR102500535B1 (en) | Hybrid transparent conductive electrode | |
| CN102522292B (en) | Display electrode of plasma display panel and production method of display electrode | |
| CN113135671A (en) | Color-adjustable glass and preparation method thereof | |
| CN110323448A (en) | Lithium ion battery current collector rolled copper foil and lithium ion battery | |
| CN101819913A (en) | Front gate type field emission cathode structure with edge enhancement effect and preparation method thereof | |
| CN116356273A (en) | Preparation method of heterojunction TCO film | |
| CN108231432A (en) | A kind of method for improving ultracapacitor self discharge | |
| CN110648852B (en) | Counter electrode and quantum dot sensitized solar cell | |
| CN209024413U (en) | A kind of ITO electropane | |
| JP2008102273A (en) | Electrochromic element and its manufacturing method | |
| EP1862563A2 (en) | Sputter deposition of molybdenum layers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120613 |