CN102494764A - Low-light detecting method for broad band covering visible light - Google Patents
Low-light detecting method for broad band covering visible light Download PDFInfo
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- CN102494764A CN102494764A CN2011103563175A CN201110356317A CN102494764A CN 102494764 A CN102494764 A CN 102494764A CN 2011103563175 A CN2011103563175 A CN 2011103563175A CN 201110356317 A CN201110356317 A CN 201110356317A CN 102494764 A CN102494764 A CN 102494764A
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Abstract
The invention discloses a low-light detecting method for broad band covering visible light, which is characterized in that a quantum dot-quantum well photoelectric detector is in butt joint with a CMOS read-out circuit and then arranged in a box of a low-light detecting system, consequently, the broad band covering the visible light can directly read out when detecting the low light. Compared with the prior art, the invention has high sensitivity, big signal noise ratio and wide detection band range, and the low light with light power of 0.2nW can be detected; under the illumination of 0.2nW laser light power, the response voltage of the read-out circuit within 80 microsecond integral time amounts to 20mV; and the integral and exposure time is reduced at least for 1 order of magnitude as compared with the prior art, so as to meet the requirements of size extensibility of different devices and signals, and facilitate the wide application of the photoelectric detector in the field of low-light low-irradiance detection.
Description
Technical field
The present invention relates to the circuit design technique field, specifically a kind of broadband micro light detecting method of covering visible light that is used for photodetector.
Background technology
Fainter light detector can be operated under the atomic weak illumination condition; In military surveillance, use very extensive a lot of application in space exploration, machine vision, environmental monitoring, guard monitor, medical diagnosis, the bio-science various fields and need survey low-light power 10nW and following luminous power.Noise level in the cmos image detector constantly reduces; Sensitivity to low level light signal also improves constantly; But cmos image sensor just can carry out micro light detecting after must adopting pixel booster multiplication photo-generated carrier number or image intensifier; And integral time and time shutter are all veryer long; Yet this micro light detecting accuracy under the low level light signal situation is lower, has influenced further research and exploration of photo-detector, has restricted photo-detector greatly in low-light low irradiance extensive applications.
Summary of the invention
The broadband micro light detecting method of a kind of covering visible light that the objective of the invention is to be directed against the deficiency of prior art and provide; It docks quantum dot-quantum well photoelectric detector and is placed in the case that is provided with the low-light test macro with the CMOS sensing circuit; May detect than the lower low-light of the following luminous power of 0.2nW, and integration and time shutter are shorter, easy to operate; The micro light detecting accuracy is high; Satisfied the extendible needs of different components and signal magnitude, helped promoting the widespread use of photodetector, further research, exploitation micro light detecting have been had and significance in low-light low irradiance field of detecting.
The objective of the invention is to realize like this: the broadband micro light detecting method of a kind of covering visible light; Being characterized in that this method is docked quantum dot-quantum well photoelectric detector with the CMOS sensing circuit is placed in the case that is provided with the low-light test macro; Can directly read the broadband that covers visible light when then low-light being surveyed, its concrete detection may further comprise the steps:
(1), photodetector and sensing circuit docks
Quantum dot-quantum well photoelectric detector and CMOS sensing circuit are docked on the substrate and are welded in the Dewar flask, to reduce external electromagnetic interference;
(2), low-light test macro
The low-light test macro is by the coaxial optic test platform that low-light radiating light source, first Amici prism, second Amici prism, microcobjective, Dewar flask, white light, LCD display, industrial television surveillance system device, micropositioner, test circuit and digital oscilloscope constitute, and wherein is welded with photodetector and sensing circuit after the butt joint in the Dewar flask;
(3), low-light is read detection
Above-mentioned low-light test macro is placed in the case that the black cloth of 0 nW background signal covers; Dewar flask is arranged under the 120K temperature and works; And drive signal being provided for photodetector provides voltage bias and sensing circuit, two output terminals of sensing circuit insert digital dual trace oscilloscope respectively, regulate micropositioner then laser facula is radiated in the photosensitive unit of photodetector; Through being slidingly arranged in the output voltage that shading sheet metal before the microcobjective is tested the unglazed photograph of sensing circuit respectively and illumination is arranged; Its two voltage difference is the low-light response voltage in this photosensitive unit, then, regulates micropositioner again laser facula is radiated in the next photosensitive unit of photodetector; Repeat above-mentioned steps, read detection until the low-light of quantum dot-quantum well detector of accomplishing all arrays.
Said low-light radiating light source forms continuously adjustable 10 by laser instrument, the first decay dish, the second decay dish, optical filter, catoptron and light power meter
-1NW ~ radiometric the pointolite of 1.6 μ W.
Said test circuit is that photodetector and sensing circuit provide voltage bias and drive signal, detector and sensing circuit is worked in normal range, and measure photoelectric response voltage.
Said voltage bias is the working bias voltage of photodetector, confirms with responsiveness, photoelectric characteristic and the signal to noise ratio (S/N ratio) of quantum dot-quantum well photoelectric detector.
Said drive signal is for driving sensing circuit to the scanning of detector array procession, integration, the clock signal reading and reset.
The present invention compared with prior art has highly sensitive, and signal to noise ratio (S/N ratio) is big, the detecting band wide ranges; Cover near ultraviolet, visible light and near-infrared band; Remedied the deficiency of CCD device, can < low-light of 0.2nW be surveyed, under the illumination of 0.2nW laser optical power to luminous power; Sensing circuit 80 μ s in integral time response voltage reach 20mV; Integration reduces by 1 one magnitude with the time shutter than prior art at least, has satisfied the extendible needs of different components and signal magnitude, helps promoting the widespread use of photodetector in low-light low irradiance field of detecting.
Description of drawings
Fig. 1 is a low-light test system structure synoptic diagram of the present invention;
Fig. 2 is the continuous adjustable low-light radiating light source structural representation of the present invention;
Fig. 3 is a low-light test macro drive signal sequential chart of the present invention;
Fig. 4 is that quantum dot-the quantum well photoelectric detector pixel is unglazed according to oscillogram;
Fig. 5 is quantum dot-quantum well photoelectric detector pixel low-light illumination oscillogram.
Embodiment
Dock then with the CMOS sensing circuit with quantum dot-quantum well photoelectric detector below, it carried out the specific embodiment of micro light detecting, the present invention is done further elaboration:
Can directly read the broadband that covers visible light when the present invention surveys low-light, its concrete detection may further comprise the steps:
(1), photodetector and sensing circuit docks
Heterojunction quantum dot-quantum well photoelectric detector and CMOS sensing circuit are docked on the substrate and are welded in the Dewar flask; To reduce external electromagnetic interference; After photodetector and the sensing circuit butt joint, its signal to noise ratio (S/N ratio) is very big, under the illumination of 0.2nW laser power, surveys; 80 μ s integral time, interior sensing circuit response voltage reached 20mV, need not to use image intensifier or photomultiplier.Under the constant situation of detector process conditions, through to detector pixel structure and size rationally choose the setting with sensing circuit parameter integral time, can detect fully than the lower low-light of the following luminous power of 0.2nW.
(2), low-light test macro
This low-light test macro places in the black box 1, and the outside hides with black cloth, its objective is that experimental result shows that coaxial optical table can realize 10 in order to reduce the influence of extraneous bias light
-1NW ~ 1.6 μ W laser powers adjustable continuously satisfied the low radiometric test condition of low-light of photodetector, and in order to reduce test noise, the various piece of system altogether.
(3), low-light is read detection
Above-mentioned low-light test macro is placed in the black box 1 that the black cloth of 0 nW background signal covers; Dewar flask 6 is arranged under the 120K temperature and works; Test circuit 11 provides drive signal for photodetector provides voltage bias and sensing circuit, and detector and sensing circuit are worked in normal range.Two output terminals of sensing circuit insert digital dual trace oscilloscope 12 respectively; Regulating micropositioner 10 then is radiated in the photosensitive unit of photodetector laser facula; Test sensing circuit respectively at unglazed photograph with the output voltage when illumination is arranged through being slidingly arranged in shading sheet metals 51 before the microcobjective 5; Its two voltage difference is the low-light response voltage in this photosensitive unit, then, regulates micropositioner 10 again laser facula is radiated in the next photosensitive unit of photodetector; Repeat above-mentioned steps, read detection until the low-light of quantum dot-quantum well detector of accomplishing all arrays.Under the constant situation of detector process conditions,, can detect fully than the lower low-light of the following luminous power of 0.2nW through to rationally the choosing and sensing circuit isoparametric setting integral time of detector pixel structure and size.
Micropositioner 10 can monitored and regulate to this coaxial optic test platform easily is radiated in the photosensitive unit of photodetector laser facula, specifically tests and regulates as follows:
After the laser and the low-light calibration of power; Pull open catoptron 25 and remove light path; Opening white light 7 laser faculas and white light impinges upon on the photodetector in the Dewar flask 6 after through first Amici prism 3, second Amici prism 2 and microcobjective 5; LCD display 8 through linking to each other with industrial television surveillance system device 9 can clearly be seen laser facula and photodetector; Regulate micropositioner 10 and make the accurate irradiation of laser facula after on the photodetector pixel, close white light 7, pull open first Amici prism 3 and second Amici prism 4; Laser facula passes through microcobjective 5 direct irradiation on the photodetector pixel like this; Sensing circuit provides WV and work schedule through test circuit 11, and the output OUT1 of sensing circuit and OUT2 insert AgelintDSO6052A numeral dual trace oscilloscope 12 respectively, survey unglazed photograph respectively and output voltage OUT1 and the OUT2 under the light conditions arranged through the shading sheet metal 51 of slip microcobjective 5 fronts; Actual sensing circuit response voltage is that two output voltages are poor, i.e. sensing circuit response voltage=OUT2-OUT1.After the micro light detecting of first pixel is intact, then, regulates micropositioner 10 again and make the accurate irradiation of laser facula to next pixel, repeat above-mentioned steps, read test until the low-light of quantum dot-quantum well detector of accomplishing all 2 * 8 arrays.
Test circuit 11 provides suitable voltage bias and drive signal for photodetector and sensing circuit; Detector and sensing circuit are worked in normal range; Drive signal provides suitable sequential to sensing circuit; Sensing circuit is selected at clock signal, row exports the corresponding output voltage of 16 pixels under signal and the effect of column selection signal successively, each drive signal such as following table 1:
The explanation of table 1 low-light test macro drive signal
Consult accompanying drawing 3, the step of test drive signal sequential is following:
(1) test circuit 11 applies a START signal to sensing circuit, after sensing circuit initialization (about tens μ s), and shift register output C8 signal;
(2) the rising edge triggering for generating of C8 signal (RESET) signal that resets;
(3) the rising edge triggering for generating SH1 signal of RESET reset signal;
(4) the SH1 signal produces the SH2 signal through the delay of certain hour, and be exactly the integral time of sensing circuit to the detector light signal time delay;
(5) after the SH2 signal ended, the shift register output signal on each road of gating output has successively been exported until last road signal of C8 signal indication of output in the sensing circuit.
Repeat above-mentioned steps (1) ~ (4) process, make sensing circuit ceaselessly to the scanning of detector array procession, integration, read and homing action.
Consult accompanying drawing 4; Quantum dot-quantum well photoelectric detector that the present invention surveys is under the situation of unglazed photograph; The experimental waveform figure of the response voltage that photodetector and sensing circuit obtain after butt joint; Its oscillogram is represented the output voltage waveform of the no optical radiation of the 7th pixel under sweep signal control of photodetector, can obviously observe the output voltage of this pixel under unglazed photograph and not change, and test is less than response voltage.
Consult accompanying drawing 5; Quantum dot-quantum well photoelectric detector that the present invention surveys is under low-light illumination; The experimental waveform figure of the response voltage that photodetector and sensing circuit obtain after butt joint; The 7th pixel of expression photodetector has the output voltage waveform of optical radiation in its circle under sweep signal control; The voltage of can observing obviously that the output voltage of this pixel under low-light changes and test meets with a response, the present invention of experiment proof can well carry out the low-light test to quantum dot-quantum well photoelectric detector under the low-light situation.
More than just the present invention being further described, is not in order to limit practicing of this patent, all for the present invention's equivalence enforcement, all should be contained within the claim scope of this patent.
Claims (5)
1. broadband micro light detecting method that covers visible light; It is characterized in that this method is docked quantum dot-quantum well photoelectric detector with the CMOS sensing circuit is placed in the case that is provided with the low-light test macro; Can directly read the broadband that covers visible light when then low-light being surveyed, its concrete detection may further comprise the steps:
(1), photodetector and sensing circuit docks
Quantum dot-quantum well photoelectric detector and CMOS sensing circuit are docked on the substrate and are welded in the Dewar flask, to reduce external electromagnetic interference;
(2), low-light test macro
The low-light test macro is by the coaxial optic test platform that low-light radiating light source, first Amici prism, second Amici prism, microcobjective, Dewar flask, white light, LCD display, industrial television surveillance system device, micropositioner, test circuit and digital oscilloscope constitute, and wherein is welded with photodetector and sensing circuit after the butt joint in the Dewar flask;
(3), low-light is read detection
Above-mentioned low-light test macro is placed in the case that the black cloth of 0 nW background signal covers; Dewar flask is arranged under the 120K temperature and works; And drive signal being provided for photodetector provides voltage bias and sensing circuit, two output terminals of sensing circuit insert digital dual trace oscilloscope respectively, regulate micropositioner then laser facula is radiated in the photosensitive unit of photodetector; Through being slidingly arranged in the output voltage that shading sheet metal before the microcobjective is tested the unglazed photograph of sensing circuit respectively and illumination is arranged; Its two voltage difference is the low-light response voltage in this photosensitive unit, then, regulates micropositioner again laser facula is radiated in the next photosensitive unit of photodetector; Repeat above-mentioned steps, read detection until the low-light of quantum dot-quantum well detector of accomplishing all arrays.
2. according to the broadband micro light detecting method of the said covering visible light of claim 1, it is characterized in that said low-light radiating light source forms continuously adjustable 10 by laser instrument, the first decay dish, the second decay dish, optical filter, catoptron and light power meter
-1N ~ radiometric the pointolite of 1.6 μ W.
3. according to the broadband micro light detecting method of the said covering visible light of claim 1; It is characterized in that said test circuit is that photodetector and sensing circuit provide voltage bias and drive signal; Detector and sensing circuit are worked in normal range, and measure photoelectric response voltage.
4. according to the broadband micro light detecting method of the said covering visible light of claim 3, it is characterized in that said voltage bias is the working bias voltage of photodetector, confirm with responsiveness, photoelectric characteristic and the signal to noise ratio (S/N ratio) of quantum dot-quantum well photoelectric detector.
5. according to the broadband micro light detecting method of the said covering visible light of claim 3, it is characterized in that said drive signal is for driving sensing circuit to the scanning of detector array procession, integration, the clock signal reading and reset.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105190260A (en) * | 2013-03-08 | 2015-12-23 | ams有限公司 | Ultraviolet semiconductor sensor device and method of measuring ultraviolet radiation |
| CN105181129A (en) * | 2015-08-12 | 2015-12-23 | 华东师范大学 | Wireless-control weak light detection method based on high-sensitive photoelectric detector |
| CN111189537A (en) * | 2020-01-07 | 2020-05-22 | 中国科学院武汉物理与数学研究所 | Device and method for simultaneously monitoring multi-channel and multi-type laser power |
| CN111238775A (en) * | 2020-03-11 | 2020-06-05 | 中国工程物理研究院激光聚变研究中心 | Three-dimensional distribution measuring device for scattering power of photonic crystal fiber |
| CN111579064A (en) * | 2020-04-26 | 2020-08-25 | 东南大学 | Ultraviolet/visible light signal detection system and method based on quantum dot fluorescence time delay |
| CN113432838A (en) * | 2021-06-09 | 2021-09-24 | 北方夜视技术股份有限公司 | Automatic testing system and method for signal-to-noise ratio and halo of low-light-level image intensifier |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105190260A (en) * | 2013-03-08 | 2015-12-23 | ams有限公司 | Ultraviolet semiconductor sensor device and method of measuring ultraviolet radiation |
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| CN105181129A (en) * | 2015-08-12 | 2015-12-23 | 华东师范大学 | Wireless-control weak light detection method based on high-sensitive photoelectric detector |
| CN105181129B (en) * | 2015-08-12 | 2017-03-29 | 华东师范大学 | A kind of controlled in wireless low-light detection method based on highly sensitive photodetector |
| CN111189537A (en) * | 2020-01-07 | 2020-05-22 | 中国科学院武汉物理与数学研究所 | Device and method for simultaneously monitoring multi-channel and multi-type laser power |
| CN111238775A (en) * | 2020-03-11 | 2020-06-05 | 中国工程物理研究院激光聚变研究中心 | Three-dimensional distribution measuring device for scattering power of photonic crystal fiber |
| CN111579064A (en) * | 2020-04-26 | 2020-08-25 | 东南大学 | Ultraviolet/visible light signal detection system and method based on quantum dot fluorescence time delay |
| CN111579064B (en) * | 2020-04-26 | 2022-06-10 | 东南大学 | Ultraviolet/visible light signal detection system and method based on quantum dot fluorescence time delay |
| CN113432838A (en) * | 2021-06-09 | 2021-09-24 | 北方夜视技术股份有限公司 | Automatic testing system and method for signal-to-noise ratio and halo of low-light-level image intensifier |
| CN113432838B (en) * | 2021-06-09 | 2022-08-09 | 北方夜视技术股份有限公司 | Automatic testing system and testing method for signal-to-noise ratio and halo of low-light-level image intensifier |
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