CN102484028A - Ion source cleaning end point detection - Google Patents

Ion source cleaning end point detection Download PDF

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Publication number
CN102484028A
CN102484028A CN2010800277226A CN201080027722A CN102484028A CN 102484028 A CN102484028 A CN 102484028A CN 2010800277226 A CN2010800277226 A CN 2010800277226A CN 201080027722 A CN201080027722 A CN 201080027722A CN 102484028 A CN102484028 A CN 102484028A
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ion
chamber
peace
ion source
source chamber
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CN2010800277226A
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CN102484028B (en
Inventor
威尔汉·P·普拉托
奈尔·J·巴森
彼得·F·库鲁尼西
艾力克斯恩德·S·培尔
奎格·R·钱尼
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2209/00—Apparatus and processes for manufacture of discharge tubes
    • H01J2209/01—Generalised techniques
    • H01J2209/017—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30466—Detecting endpoint of process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography

Abstract

In an ion implanter, a Faraday cup is utilized to receive an ion beam generated during ion source cleaning. The detected beam has an associated mass spectrum which indicates when the ion source cleaning process is complete. The mass spectrum results in a signal composed of a cleaning agent and the material comprising the ion source. This signal will rise over time as the ion source chamber is being cleaned and will level-off and remain constant once the deposits are etched away from the source chamber, thereby utilizing existing implant tools to determine endpoint detection during ion source cleaning.

Description

The peace and quiet endpoint detecting of ion source
Technical field
Embodiments of the invention relate to the field that semiconductor element is made.Clearer and more definite, the invention relates to the device and method that is used for the employed ion source chamber of peace and quiet ion implantation equipment.
Background technology
It is in order to foreign ion (impurity ion) is doped in the semiconductor substrate (semiconductor substrate) to obtain the processing procedure of the element characteristic of being wanted that ion is implanted (Ion implantation).With ion beam from ion source chamber (ion source chamber) guiding substrate.The implantation depth that is implanted in the substrate is based on the quality that ion is implanted the ion that is produced in energy (ion implant energy) and the source chamber.Fig. 1 is the calcspar of the Ion Implantation Equipment (ion implanter) 100 that comprises ion source chamber 102.Power supply (power supply) 101 is supplied to source 102 with institute's energy requirement, source 102 through configuration to produce the ion of specific species.The ion that is produced extracts from said source via a succession of electrode (electrode) 104, and forms the bundle (beam) 95 that passes mass analyzer magnet (mass analyzer magnet) 106.Said mass analyzer is with specific magnetic fields (magnetic field) configuration; Can advance through analyzer so that only have the ion of the mass-to-charge ratio of wanting (mass-to-charge ratio), resolve slit (mass resolving slit) 107 through quality with the transmission of maximum ground.The ion of the species of wanting passes deceleration platform (deceleration stage) 108 and arrives corrector magnet (corrector magnet) 110 from quality slit 107.Make corrector magnet 110 energisings; So that ion tuftlet (ion beamlet) is according to the intensity in the magnetic field that is applied and direction and deflection; Point to the workpiece (work piece) be positioned on the strutting piece (support) (for example, pressing plate (platen)) 114 or the ribbon beam of substrate thereby provide.In certain embodiments, the second deceleration platform 112 can be placed between corrector magnet 110 and the strutting piece 114.Ion with substrate in electronics and atomic nucleus off-energy when bumping against, and be still in the degree of depth place that wants in the substrate based on acceleration energy (acceleration energy).
Ion source chamber 102 comprises the filament that is heated (heated filament) usually, and the said filament that is heated makes feed-in gas (feed gas) ionization that is introduced in the chamber, to form charged ion and electronics (plasma).Heating element (heating element) can be (for example) Bai Nasi source filament (Bernas source filament), cathodes heated indirectly by an el (indirectly heated cathode, IHC) assembly or other thermionic sources (thermal electron source).Different feed-in gases are supplied to ion source chamber, to obtain ion beam (ion beam) with specific dopant characteristic.For example, H under higher relatively chamber temp 2, BF 3And AsH 3Introducing be broken down into and have high the monatomic of energy of implanting.The high energy value common and greater than 20keV of implanting is associated.Implant for low energy ion, will than heave hand electricity molecule (such as, decaborane, carborane etc.) be introduced into and be in the low chamber temp source chamber down, the molecular structure through Ionized molecule with low implantation energy is preserved in this measure.The low energy of implanting has the value that is lower than 20keV usually.Specific feed-in gas is supplied to source chamber 102 with produce when being wanted ionic species, also possibly produce the extra non-species (ion or neutral particle) of desiring.These are non-desires species and has low-vapor pressure (vapor pressure) usually, and condensable and adhere to the inner surface of source chamber.For example, with hydrogen phosphide (phosphine, PH 3) when being fed in the chamber of source, possibly going up at chamber wall (chamber wall) and form phosphorus (P) deposit.With weight molecule (such as, decaborane and carborane) when being fed in the chamber of source, it is more that non-on source chamber wall and the electrode desired deposit.These solid deposits can change the electrical characteristics (voltage instability) of chamber wall, but and the interfere ion source hole (ion source aperture) of therefrom extracting ion, cause that by this bundle of operation of unsettled source and non-homogeneous extracts.
A kind of method in order to peace and quiet ion source chamber comprises introduces peace and quiet gas, for example, and Nitrogen trifluoride (NF 3), dichloro (Cl 2), sulphur hexafluoride (SF 6) etc., it etches away the non-deposition materials of desiring via plasma enhanced chemical reaction (plasma-enhanced chemical reaction).Usually with high flow rate these gases are supplied to ion source chamber.Yet,, just must make the judgement that when stops peace and quiet gas is supplied to the source chamber in case peace and quiet process begins.At present, the equipment that this terminal point determining also need be except Ion Implantation Equipment.For example, residual gas analyzer (Residual Gas Analyzer, RGA) or OES (Optical Emission Spectroscopy) can be used for the peace and quiet endpoint detecting of source chamber (endpoint detection).RGA comprises ionizer (ionizer), mass analyzer (mass analyzer) and ion detector (ion detector).RGA analyzes the outer neutral particle of bunch, and output spectrum, and said spectrum shows the relative intensity of the various species that exist in the gas.Ion from gas is distinguished by its quality by the analyzer of RGA.In case RGA judges that the species that exist in the gas corresponding to the material of forming ion source chamber, just stop peace and quiet process.Yet using RGA to carry out endpoint detecting also needs an other equipment except implantation machine self.In addition, RGA does not detect in ion source the ion that produces and extract from ion source, the neutral gas atom and the molecule of the All Ranges in vacuum system but detecting rises.Therefore, need utilize the existing equipment instrument that the peace and quiet process of ion source is carried out endpoint detecting.
Summary of the invention
Exemplary embodiments of the present invention is to a kind of device and method that is used for the peace and quiet endpoint detecting of ion source.In exemplary embodiments, a kind of ion implant system comprises the ion source chamber that the inwall by electric conducting material defines.Said chamber produces ion in response to the introducing of peace and quiet gas.Said chamber comprises aperture and extracts ion by said hole.Mass analysis magnets is placed in the ion source chamber downstream.Said mass analyzer magnet is through the ion of configuration to have specific mass-to-charge ratio from the ion beam selection.Faraday cup (Faraday cup) is placed in the mass analysis magnets downstream, and through configuration to receive ion beam.The current meter (current meter) that is coupled to Faraday cup through configuration so that the signal of the expression ion that Faraday cup was received to be provided.The ion that said signal indication is associated with the electric conducting material and the peace and quiet gas of ion source chamber.
In exemplary methods, in the given period, peace and quiet gas is introduced in the ion source chamber.Ion source chamber has the inwall of being made up of electric conducting material.Said gas is in the indoor ionization of ion source chamber, and is extracted to form ion beam.The mass spectrum (mass spectrum) of ion of detecting ion beam, and when the electric conducting material of chamber is present in the ion beam with constant relatively ratio, stop peace and quiet process in the said given period in said mass spectrum indication ion source.
Description of drawings
Fig. 1 explains the calcspar of representative Ion Implantation Equipment.
Fig. 2 is ionogenic according to an embodiment of the invention cross section square figure.
Fig. 3 is the calcspar that the exemplary of Ion Implantation Equipment is according to an embodiment of the invention simplified part.
Fig. 4 A is for according to an embodiment of the invention from the exemplary mass spectrum of the ionogenic signal that is illustrated among Fig. 2 and Fig. 3.
Fig. 4 B is the time-varying exemplary curve chart of the spectrum of XY+ signal according to an embodiment of the invention.
Fig. 5 is the flow chart of the process of the peace and quiet ion source chamber of explanation.
Embodiment
To come to describe more fully the present invention referring to accompanying drawing hereinafter, illustrate preferred embodiment of the present invention in the accompanying drawings at present.Yet the present invention can many multi-form embodiments, and should not be interpreted as the embodiment that is limited among this paper to be stated.On the contrary, it is in order to make the present invention will be more detailed and complete that these embodiment are provided, and category of the present invention is fully conveyed to those who familiarize themselves with the technology.In the drawings, same numbers refers to similar elements all the time.
Fig. 2 is for explain the cross section square figure of ion source chamber 200 substantially, and ion source chamber 200 supplies to be implanted to the ion in the substrate in order to produce.Chamber 200 comprises hole 220, extracts ion via said hole 220.The inwall of chamber 200 is (for example, tungsten) of conduction, and defines the ionization district, in said ionization district, energy granted have source element (such as, phosphorus (P) and arsenic (As)) dopant gas, the ion that is associated with generation.By means of standard three (3) electrode configurations in order to the generation electric field; Chamber 200 extracts the ion that is formed by dopant gas from the source via hole 220, and said standard three electrode configurations comprise plasma electrode (plasma electrode) 215, suppress electrode (suppression electrode) 216 and grounding electrode (ground electrode) 217.Illustrate to spaced apart with grounding electrode 217 although will suppress electrode 216, this only is used to reach the illustrative purpose, and said electrode contacts with each other via insulator on entity.But article on plasma body electrode 215 biasings make it to be in the big current potential identical with ion source chamber 200.Suppress electrode 216 and be connected to power supply, and, make it to be in the negative value of appropriateness, be back in the source chamber 200 to prevent electronics usually to suppressing electrode 216 biasings.Grounding electrode 217 is positioned at and suppresses electrode 216 downstream, and is in earthing potential.The intensity of the electric field that is produced by said electrode is tunable to the beam electronic current of wanting, with the ion beam of the The ion extraction particular type of generation in chamber 200.
Ion source chamber 200 is the cathodes heated indirectly by an el chamber, and it comprises the negative electrode/filament assembly (cathode/filament assembly) 230 of an end that is positioned at ion source chamber 200.Filament (filament) 231 is positioned near the outside negative electrode 232 of ion chamber.Voltage is supplied to filament 231, and this measure produces the enough electric currents through filament, it is heated and produce hot electron (thermo-electron).By applying to negative electrode than the more positive bias of filament, come indirected heated cathode 232 via filament 231, this measure causes these hot electrons to quicken towards negative electrode 232 from filament 231, and target heats by this.In negative electrode 232 heat of emission electronics to the ion source chamber 200, this measure makes the dopant gas ionization that is introduced in the chamber, thereby forms plasma.Repellel (repeller) 210 is usually located on the end relatively of ion source chamber 200, and is biased to the voltage identical with negative electrode 232.The electronics of being launched is limited between negative electrode 232 and the repellel 210, and said electronics and dopant feed-in gas bump against, the plasma that has the character of being wanted with generation.
As indicated above, feed-in gas is supplied to ion source chamber with produce when being wanted ionic species, also possibly produce the extra non-species of desiring, saidly non-ly desire on the inwall that species are deposited on chamber 200.During normal (non-peace and quiet circulation) ion source operation, use pipeline 212 that dopant gas is introduced in the source chamber 200.In peace and quiet operating period, use pipeline 212 that peace and quiet gas is introduced in the chamber 200, indicated like arrow 212.For example, can be via pipeline 212 with higher relatively flow rate (for example, 100sccm or higher) with the peace and quiet gas of reactivity (such as, Nitrogen trifluoride (NF 3) or dichloro (Cl 2)) be supplied in the chamber 200.The introducing of these peace and quiet gases is that (in situ) carries out on the spot, and can introduce simultaneously or introduce as independent peace and quiet plasma with dopant species during the equipment downtime and/or between the species change.For example, with NF 3When being introduced in the chamber 200, by making NF 3Be dissociated into nitrogenous and fluorine-containing molecule and atom and produce atomic fluorine.These fluorine-containing peace and quiet gases are chamber 200 inside in the source, experience chemical reaction via plasma and/or heat chemistry, the high response that produces fluorine by this steady (meta-stable) species that are situated between.These species etchings are formed at the deposit on the wall of chamber 200.In this way, use plasma to remove the deposit on chamber 200 inside.In case said deposit is removed, said deposit just changes into gaseous state or volatile compound, and extracts from chamber 200 by plasma electrode 215, inhibition electrode 216 and grounding electrode 217.
The simplification calcspar of the first of the Ion Implantation Equipment that is illustrated in Fig. 3 key diagram 1.In detail, the said part of Ion Implantation Equipment 300 comprises ion source 200 (omit and extract electrode), mass analyzer magnet 206, quality parsing slit 260 and Faraday cup 270.Omit downstream components for ease of explaination, such as deceleration platform, corrector magnet and workpiece pressing plate.Such as preceding text description, peace and quiet gas is introduced in the source chamber 200, makes its ionization and extract by extracting electrode, supply to its magnet 206 of quality analysis will restraint 250.Advance when resolving slit 260 with transmission through the quality with hole 261 through magnetic field at ion, operational analysis device magnet is selected the ionic species of wanting.Faraday cup 270 is positioned at quality and resolves slit 260 downstream, so that caught whole bundle march to the acceleration platform in corrector magnet and/or downstream at ion beam before.Faraday cup is in order to measure the electric current through the bundle of analyzing 250.In this configuration, Faraday cup 270 receives the bundle 250 that warp is analyzed, and produces electric current based on restrainting 250 representative current.Faraday cup 270 is connected to current meter, and (for example, mA), and the electric current of judging the ion beam that Faraday cup 270 is received based on the area that quality is resolved the hole 261 of slit 260 (for example, mA/cm2) with the detecting amperage.
During peace and quiet source chamber 200, remove the deposit on the inwall of chamber via the ion beam that is extracted.Can mass analyzer magnet 206 be set at the quality of the ion that produces from peace and quiet process, be swept to quality slit 261 so that the institute that is received by Faraday cup 270 will restraint.In detail, the ion beam that is extracted has specific mass signal, and it is made up of peace and quiet gas and the material (for example, tungsten) that constitutes the inner surface of chamber 200.Fig. 4 A is for being introduced in the chamber at peace and quiet gas and during by Faraday cup 270 detectings, the mass spectral instance of the ion beam that extracts from ion source chamber 200.The mass spectrum of the ion beam that is received under specified pressure will have the signal section that is expressed as XY+, and said signal section is to produce owing to the reaction of the material of the inside of forming chamber 200 and peace and quiet gas.For example, if chamber 200 is to be processed by tungsten, and peace and quiet gas is Cl 2, then the mass spectrum of the ion beam signal (being expressed as XY+) that received of Faraday cup 270 comprises chlorine and tungsten.When peace and quiet process began, the content of tungsten was relatively low, because detersive is just removing the material that is deposited in the chamber 200.Along with peace and quiet process continues, the area that chamber 200 waits deposit to cover thus diminishes, and increases like the illustrated amount that is present in the tungsten in the ion beam of mass spectral analysis.This situation is able to explanation in Fig. 4 B, in Fig. 4 B, the XY+ component that comprises peace and quiet gas and source chamber material of signal is increased owing to more deposits are just removing from chamber 200 when peace and quiet process begins, but then at time t 0Shi Bianping, this indication is just detecting more chamber material in the XY+ signal.Because the chamber material that is detected is just becoming constant, wait to remove so mean the more deposits of nothing, and chamber is what clean.Perhaps, only can detect the amount of detersive in the XY+ signal (for example, chlorine).In such cases, the content of detersive will be height when peace and quiet process begins, and at time t 0Time falls near zero, is cleaning with the indication chamber.Although the exemplary mass spectrum of ion beam signal (XY+) comprises chlorine and tungsten, said system can be through configuration only to measure tungsten part or to constitute the other materials of inside on the surface of chamber 200.By the existence of the ion that is associated with chamber material (and/or detersive) via Faraday cup 270 detectings, can use mass spectral analysis to control peace and quiet time and condition.In this way, can use endpoint detecting method, via using implantation machine instrument when to judge peace and quiet ion source chamber, and need not extras.
Fig. 5 utilizes the flow chart of mass spectral analysis with the process of the ion source chamber of the peace and quiet Ion Implantation Equipment of judgement terminal point determining for explanation.At step S-10 place, via pipeline 212 with peace and quiet gas (such as, Nitrogen trifluoride (NF 3), dichloro (Cl 2), sulphur hexafluoride (SF 6) etc.) be introduced in the ion source chamber 200.At step S-20 place, by providing the peace and quiet gas that is in suitable temperature and flow rate to make the ionization in said chamber of quiet gas.At step S-30 place, in the just ionization and/or resolve into the high response etchant atomic time in the chamber of source of peace and quiet gas, chamber extracts ion beam from the source.At step S-40 place, the mass analyzer magnet of ion implant tool is set at the mass-to-charge ratio of the ion that produces from peace and quiet process.At step S-50 place,, and, judge the mass spectrum of ion beam with XY+ signal at step S-60 place by Faraday cup 270 detecting ion beams.In mass spectrum, detect the existence of chamber material, and this exists when flattening in time, stop the peace and quiet process of chamber at step S-70 place at ion beam.In this way; Can use conventional online implanting instrument equipment (in-line implant tool equipment), detect the terminal point of the process of the ion source chamber that is used for peace and quiet Ion Implantation Equipment via the mass spectral analysis of using the ion beam that produces from ion source received.
Though disclosed the present invention with reference to some embodiment, under the scope of the present invention that in not breaking away from like additional claim, is defined and the situation of category, numerous modifications, change and the change of the embodiment that describes are possible.Therefore, the present invention also is not intended to be limited to described embodiment, but the present invention has by the additional claim and the whole category that language defined of equivalent thereof.

Claims (11)

1. the method for the peace and quiet endpoint detecting of an ion source chamber comprises:
In the given period, peace and quiet gas is introduced in the said ion source chamber, said ion source chamber has the inwall of being made up of electric conducting material;
Make said gas in the indoor ionization of said ion source chamber;
From said ion source chamber extract said through Ionized gas to form ion beam;
Detect the mass spectrum of the ion in the said ion beam;
Judge when the said mass spectrum of the said ion in the said ion beam indicates the said electric conducting material of said ion source chamber in the said given period, to be present in the said ion beam with constant relatively ratio.
2. method according to claim 1 more is included in said mass spectrum when indicating said electric conducting material to be present in the said ion beam with said constant relatively ratio, stops the said introducing of peace and quiet gas to said ion source chamber.
3. method according to claim 1, the said mass spectrum of wherein detecting the said ion in the said ion beam comprises the signal that produces the said peace and quiet gas of expression.
4. method according to claim 1, the said mass spectrum of wherein detecting the said ion in the said ion beam comprises the signal that produces the said electric conducting material of expression.
5. method according to claim 1, the said mass spectrum of wherein detecting said ion comprise uses Faraday cup to detect the said ion in the said ion beam.
6. method according to claim 1 wherein comprises the deposit from the said inwall of said chamber from the said of said ion source chamber through Ionized gas.
7. method according to claim 4, wherein said electric conducting material are tungsten.
8. method according to claim 4, wherein said electric conducting material are graphite.
9. ion implant system comprises:
Ion source chamber, its inwall by electric conducting material defines, and said chamber produces ion in response to being introduced into the peace and quiet gas in the said chamber, and said chamber has the hole, via extracting said ion in said hole;
Mass analysis magnets, it is placed in said ion source chamber downstream, and said mass analysis magnets is through the ion of configuration to have specific mass-to-charge ratio from said ion beam selection;
Faraday cup, it is placed in said mass analysis magnets downstream, said Faraday cup through configuration to receive said ion beam; And
Current meter; It is coupled to said Faraday cup; Said current meter is through the signal of configuration with the said ion that expression is provided is received by said Faraday cup; The ion that said signal indication is associated with the said electric conducting material and the said peace and quiet gas of said ion source chamber wherein when the said signal of the ion that is associated with said electric conducting material of expression is more constant relatively in the given period, is not introduced into said peace and quiet gas in the said chamber.
10. ion implant system according to claim 9, wherein said peace and quiet gas is Nitrogen trifluoride.
11. ion implant system according to claim 9, wherein said peace and quiet gas is dichloro.
CN201080027722.6A 2009-06-26 2010-06-22 Ion implantation system and method for detecting ion source cleaning end point Active CN102484028B (en)

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US12/492,894 US8003959B2 (en) 2009-06-26 2009-06-26 Ion source cleaning end point detection
US12/492,894 2009-06-26
PCT/US2010/039444 WO2010151523A1 (en) 2009-06-26 2010-06-22 Ion source cleaning end point detection

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