CN102480847A - Circuit board and manufacturing method thereof - Google Patents

Circuit board and manufacturing method thereof Download PDF

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Publication number
CN102480847A
CN102480847A CN2010105863095A CN201010586309A CN102480847A CN 102480847 A CN102480847 A CN 102480847A CN 2010105863095 A CN2010105863095 A CN 2010105863095A CN 201010586309 A CN201010586309 A CN 201010586309A CN 102480847 A CN102480847 A CN 102480847A
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catalyst grains
those
wiring board
activation
insulating barrier
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CN2010105863095A
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CN102480847B (en
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余丞博
徐嘉良
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Unimicron Technology Corp
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Unimicron Technology Corp
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  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

The invention relates to a circuit board and a manufacturing method thereof. A method of manufacturing the wiring board. First, a composite substrate is provided, which includes a conductive layer and an active insulation layer covering the conductive layer. The active insulation layer includes a plurality of first catalyst particles. Then, an intaglio pattern and at least one blind via are formed on the active insulation layer. Some of the first catalyst particles are activated and exposed in the intaglio pattern and the blind holes, and the blind holes partially expose the conductor layer. Then, the activated first catalyst particles are replaced with a plurality of second catalyst particles. Then, a circuit layer is formed in the intaglio pattern by using the second catalyst particles, and a conductive column is formed in the blind via.

Description

Wiring board and manufacturing approach thereof
Technical field
The present invention relates to a kind of wiring board and manufacturing approach thereof, particularly relate to a kind of wiring board and manufacturing approach thereof with many catalyst grains (catalyst particle).
Background technology
Wiring board is the needed elements of electrical home appliances such as electronic installations (electronic device) such as mobile phone, computer and digital camera, and TV, washing machine and refrigerator.In detail; Wiring board can carry and assembling chip (chip), passive device (passive component) and active member multiple electronic components (electronic component) such as (activecomponent), and lets these electronic components be electrically connected to each other.So, the signal of telecommunication can transmit between electronic component and wiring board, and lets above-mentioned electronic installation and electrical home appliances be able to running.
Summary of the invention
The present invention provides a kind of wiring board, and it can be assembled with at least one electronic component.
The present invention provides a kind of manufacturing approach of wiring board in addition, is used for making wiring board.
The object of the invention and solve its technical problem and adopt following technical scheme to realize.The manufacturing approach of a kind of wiring board that proposes according to the present invention.At first, a composite base plate is provided.Composite base plate comprises that a conductor layer and covers the activation insulating barrier (activated insulationlayer) of conductor layer, and the activation insulating barrier comprises many first catalyst grains.Then; On a upper surface of activation insulating barrier, form an intaglio pattern (intaglio pattern) and at least one blind hole that communicates with intaglio pattern; The some of them first catalyst grains activation and expose in intaglio pattern with blind hole in, and the local conductor layer that exposes of blind hole.Then, first catalyst grains with these activation is replaced as a plurality of second catalyst grains.Then, utilize these second catalyst grains, in intaglio pattern, form a line layer, and in blind hole, form a conductive pole, wherein conductive pole is connected between conductor layer and the line layer.
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize.
The manufacturing approach of aforesaid wiring board, the method that wherein forms these first catalyst grains of intaglio pattern and blind hole and activation comprises laser ablation (laser ablation), plasma etching (plasmaetching) or mechanical processing method.
The manufacturing approach of aforesaid wiring board, the method that wherein forms line layer and conductive pole comprise chemical plating (chemical plating) and chemical vapour deposition (CVD) (Chemical Vapor Deposition, CVD) the two at least one of them.
The manufacturing approach of aforesaid wiring board after forming blind hole, more comprises the blind hole slag (desmear) that removes photoresist.
The manufacturing approach of aforesaid wiring board after first catalyst grains with these activation is replaced as these second catalyst grains, comprises that more the conductor layer that blind hole is exposed carries out microetch (micro-etching).
The manufacturing approach of aforesaid wiring board, the method that wherein first catalyst grains of these activation is replaced as these second catalyst grains comprise the activation insulating barrier are immersed in the chemical liquid.Chemical liquid comprises a plurality of charged particles, and these first catalyst grains that these charged particles are contacted with it produce displacement reaction (displacement reaction).
The manufacturing approach of aforesaid wiring board, wherein the material of these first catalyst grains is selected from one of group that is made up of zinc, copper, silver, nickel, cobalt, iron, manganese, cadmium, titanium, tin, lead, chromium, aluminium and molybdenum.
The manufacturing approach of aforesaid wiring board, wherein the material of these second catalyst grains is selected from one of group that is made up of palladium, zinc, copper, silver, nickel, cobalt, iron, manganese, cadmium, titanium, tin, lead, chromium, aluminium and molybdenum.The material of these second catalyst grains is different from the material of these first catalyst grains, and the standard electrode potential of these second catalyst grains (standard reduction potential) is higher than the standard electrode potential of these first catalyst grains.
The manufacturing approach of aforesaid wiring board, wherein said activation insulating barrier more comprises a macromolecular compound, and these first catalyst grains are distributed in the macromolecular compound.
The manufacturing approach of aforesaid wiring board, wherein said composite base plate more comprises a body layer, and the conductor layer position is between body layer and activation insulating barrier.
The object of the invention and solve its technical problem and also adopt following technical scheme to realize.According to a kind of wiring board that the present invention proposes, it comprises a conductor layer, an activation insulating barrier, a line layer, at least one conductive pole and a plurality of second catalyst grains.The activation insulating barrier covers conductor layer, and comprises a plurality of first catalyst grains, and wherein the activation insulating barrier has an intaglio pattern and at least one blind hole that communicates with intaglio pattern.Line layer is configured in the intaglio pattern.Conductive pole is configured in the blind hole, and is connected between line layer and the conductor layer.These second catalyst grains positions in intaglio pattern with blind hole in, and be fixedly arranged on the activation insulating barrier, wherein these second catalyst grains contact line layer and conductive poles, and the material of these second catalyst grains is different from the material of these first catalyst grains.
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize.
Aforesaid wiring board more comprises a body layer, and wherein the conductor layer position is between body layer and activation insulating barrier.
Aforesaid wiring board, wherein said activation insulating barrier more comprises a macromolecular compound, these first catalyst grains are distributed in the macromolecular compound, and these second catalyst grains are fixedly arranged on macromolecular compound.
Aforesaid wiring board, wherein the material of these first catalyst grains is selected from one of group that is made up of zinc, copper, silver, nickel, cobalt, iron, manganese, cadmium, titanium, tin, lead, chromium, aluminium and molybdenum.
Aforesaid wiring board, wherein the material of these second catalyst grains is selected from one of group that is made up of palladium, zinc, copper, silver, nickel, cobalt, iron, manganese, cadmium, titanium, tin, lead, chromium, aluminium and molybdenum.The material of these second catalyst grains is different from the material of these first catalyst grains, and the standard electrode potential of these second catalyst grains is higher than the standard electrode potential of these first catalyst grains.
The present invention compared with prior art has tangible advantage and beneficial effect.By technique scheme; Wiring board of the present invention and manufacturing approach thereof have advantage and beneficial effect at least: after wiring board of the present invention is accomplished making; Utilize above-mentioned line layer, can supply at least one electronic component assembling, and a plurality of electronic components can be electrically connected to each other.So, the signal of telecommunication can transmit between electronic component and wiring board of the present invention, impels electronic installation and electrical home appliances to operate.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification, and for let of the present invention above-mentioned with other purposes, feature and advantage can be more obviously understandable, below special act embodiment; And conjunction with figs., specify as follows.
Description of drawings
Figure 1A to Fig. 1 D is the flow process generalized section of manufacturing approach of the wiring board of one embodiment of the invention.
100: wiring board 102: composite base plate
110: conductor layer 112: connection pad
112a, 132: surface 120: activation insulating barrier
Catalyst grains 124 in 122: the first: macromolecular compound
130: line layer 140: conductive pole
Catalyst grains 160 in 150: the second: body layer
D1: depth H 1: blind hole
P1: intaglio pattern S1: upper surface
T1: thickness
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and embodiment; To wiring board and its embodiment of manufacturing approach, structure, method, characteristic and the effect thereof that proposes according to the present invention, specify as after.
Relevant aforementioned and other technology contents, characteristics and effect of the present invention can be known to appear in the following detailed description that cooperates with reference to graphic embodiment.Through the explanation of embodiment, when can being to reach technological means that predetermined purpose takes and effect to obtain one more deeply and concrete understanding to the present invention, yet the appended graphic usefulness that only provides reference and explanation be not to be used for the present invention is limited.
Figure 1A to Fig. 1 D is the flow process generalized section of manufacturing approach of the wiring board of one embodiment of the invention.Please consult earlier shown in Fig. 1 D, introduce the architectural feature of present embodiment wiring board 100 earlier at this.Wiring board 100 comprises a conductor layer 110, an activation insulating barrier 120 and a line layer 130.Activation insulating barrier 120 covers conductor layers 110, and line layer 130 is configured in the activation insulating barrier 120, and wherein line layer 130 disposes with respect to conductor layer 110, and 120 of activation insulating barriers are between line layer 130 and conductor layer 110.
Conductor layer 110 for example is a line layer, and can be by tinsel after etching (etching) and form, wherein tinsel for example is Copper Foil or aluminium foil.Activation insulating barrier 120 has an intaglio pattern P1, and line layer 130 is configured in the intaglio pattern P1.The depth D 1 of intaglio pattern P1 is less than the thickness T 1 of activation insulating barrier 120, so intaglio pattern P1 can not expose conductor layer 110.In addition, in the present embodiment, wiring board 100 can be a kind of buried circuit board (embedded wiringboard), and the surface 132 of line layer 130 can trim with the upper surface S1 of activation insulating barrier 120 in fact.
Activation insulating barrier 120 comprises a plurality of first catalyst grains 122; And these first catalyst grains 122 can be a plurality of nano particles (nanoparticle), and can be metallic particles (metal particle) or the particle that contains metal complex (metal coordination compound).Therefore; The composition of these first catalyst grains 122 can contain metallic atom or metal ion, and the material of first catalyst grains 122 can be selected from the combination in any of zinc, copper, silver, nickel, cobalt, iron, manganese, cadmium, titanium, tin, lead, chromium, aluminium, molybdenum or these metals.
For example, when first catalyst grains 122 was metallic particles, first catalyst grains 122 for example was copper particle, nickel particle or iron particle.When first catalyst grains 122 is that this metal complex for example is metal oxide, metal nitride, metal misfit thing (metal complex) or metallo-chelate (metal chelation) when containing the particle of metal complex.The metal ingredient that metal complex contained can be the combination in any of zinc, copper, silver, nickel, cobalt, iron, manganese, cadmium, titanium, tin, lead, chromium, aluminium, molybdenum or these metals.
For example, first catalyst grains 122 can be cupric oxide, titanium nitride or cobalt molybdenum bimetallic nitride (Co2Mo3Nx) particle.In addition, first catalyst grains 122 can comprise multiple metal complex, and for example these first catalyst grains 122 can comprise metal oxide and metal misfit thing simultaneously, or comprise metal nitride, metal misfit thing and metallo-chelate simultaneously.
Activation insulating barrier 120 can more comprise a macromolecular compound 124; And these first catalyst grains 122 are distributed in the macromolecular compound 124, and wherein the material of macromolecular compound 124 for example is selected from the combination in any by the plain polymer of epoxy resin, polyester, acrylic acid ester, fluorine, polyphenylene oxide, polyimides, phenolic resins, polysulfones, the plain polymer of silicon, two maleic acid-triazine resin, cyanic acid polyester, polyethylene, polycarbonate resin, propylene-butadiene-styrene copolymer compound, polyethylene terephthalate resin, polybutylene terephthalate resin, liquid crystal polymer, polyamide 6, nylon, kematal, polyphenylene sulfide, cyclic olefin copolymerized macromolecule or these materials of epoxy resin, upgrading.
Wiring board 100 more comprises at least one conductive pole 140, and activation insulating barrier 120 has more at least one blind hole H1, and wherein blind hole H1 communicates with intaglio pattern P1, and blind hole H1 position is below intaglio pattern P1.Conductive pole 140 is configured in the blind hole H1, and is connected between line layer 130 and the conductor layer 110, the connection pad 112 that wherein conductive pole 140 can bonding conductor layer 110.So, line layer 130 can electrically connect conductor layer 110 via conductive pole 140, so that the signal of telecommunication can transmit between conductor layer 110 and line layer 130.
What must explain is; In the embodiment shown in Figure 1A to Fig. 1 D; Conductive pole 140 only illustrates one with blind hole H1, but in other embodiments, and the two quantity of the included conductive pole 140 and blind hole H1 of wiring board 100 can be a plurality of; So the two quantity of conductive pole shown in Figure 1A to Fig. 1 D 140 and blind hole H1 only supplies to illustrate, and non-limiting the present invention.
Wiring board 100 more comprises a plurality of second catalyst grains 150; And 150 of these second catalyst grains in intaglio pattern P1 with blind hole H1 in; And be fixedly arranged on activation insulating barrier 120; For example second catalyst grains 150 is fixedly arranged on macromolecular compound 124, wherein these second catalyst grains, 150 contact line layers 130 and conductive pole 140.
The material of second catalyst grains 150 is selected from one of group that is made up of palladium, zinc, copper, silver, nickel, cobalt, iron, manganese, cadmium, titanium, tin, lead, chromium, aluminium and molybdenum, and wherein the material of second catalyst grains 150 is different from the material of first catalyst grains 122.For example, in the present embodiment, second catalyst grains 150 for example is the palladium particle, and first catalyst grains 122 for example is the copper particle.In the manufacture process of wiring board 100, the function of second catalyst grains 150 is to impel the formation of line layer 130 and conductive pole 140, and the function of relevant second catalyst grains 150 will be explained in subsequent content.
In addition, with regard to the number of line layer, wiring board 100 can be the multilayer circuit board (multilayer wiring board) with line layer more than three layers.In detail, wiring board 100 can more comprise a body layer 160, and 110 of conductor layers wherein body layer 160 can have at least one line layer (not illustrating) between body layer 160 and activation insulating barrier 120, and conductor layer 110 can electrically connect this line layer.So, utilize conductive pole 140, conductor layer 110, line layer 130 are able to electrically conduct with the line layer three of body layer 160.
Yet; What must explain is; In other embodiments, wiring board 100 also can be the double-sided wiring board (double sided circuit board) that only has two layers of line layer, and wherein these two layers of line layers are respectively conductor layer 110 and line layer 130; And body layer 160 is merely the selection element of wiring board 100, is not to be necessary element.In other words, wiring board 100 might not comprise body layer 160, so the body layer 160 that Figure 1A to Fig. 1 D is illustrated only supplies to illustrate and non-limiting the present invention.
Below only introduce the architectural feature of wiring board 100,, below will cooperate Figure 1A to Fig. 1 D to carry out detailed explanation as for the manufacturing approach of wiring board 100.
See also shown in Figure 1A; In the manufacturing approach of wiring board 100; At first, a composite base plate 102 is provided, and composite base plate 102 comprises conductor layer 110 and activation insulating barrier 120; Wherein at this time activation insulating barrier 120 has covered conductor layer 110, and comprises many first catalyst grains 122 and macromolecular compound 124.When conductor layer 110 was line layer, composite base plate 102 can be circuit base plate (wiring substrate), and can have one or more layers line layer.
In detail, when composite base plate 102 had the multilayer line layer, composite base plate 102 can comprise body layer 160, and conductor layer 110 is understood the position between body layer 160 and activation insulating barrier 120 at this moment.Otherwise when composite base plate 102 only had one deck line layer, 102 of composite base plates did not comprise body layer 160, and the line layer that composite base plate 102 is had is merely conductor layer 110.
Activation insulating barrier 120 can be to utilize the mode of pressing (lamination) or coating (applying) to form.In detail, activation insulating barrier 120 can be liquid material or the solid-state rete with viscosity.When activation insulating barrier 120 was liquid material, activation insulating barrier 120 can form via the mode of coating.When activation insulating barrier 120 was solid-state rete, activation insulating barrier 120 can form via the mode of pressing.
See also shown in Figure 1A and Figure 1B, then, on the upper surface S1 of activation insulating barrier 120, form intaglio pattern P1 and at least one blind hole H1, wherein blind hole H1 is local exposes conductor layer 110, and is to expose connection pad 112.In addition, in forming the process of intaglio pattern P1 and blind hole H1, some first catalyst grains 122 understand activation and expose in intaglio pattern P1 with blind hole H1 in.The method that forms intaglio pattern P1 and blind hole H1 and activation first catalyst grains 122 has multiple; And in the present embodiment, the two formation and the method for activation first catalyst grains 122 of intaglio pattern P1 and blind hole H1 can comprise laser ablation, plasma etching or mechanical processing method.
The LASER Light Source that above-mentioned laser ablation adopted; The wavelength of the laser beam that it sent (laser beam) can be situated in the scope of visible light (visible light), infrared light (infrared light) or ultraviolet light (ultraviolet light); And LASER Light Source can adopt infrared laser, ultraviolet laser, garnet laser (Yttrium Aluminum Garnet, YAG laser), carbon dioxide laser, PRK (excimer laser) or far infrared laser.
Hold the above; In the process of carrying out above-mentioned laser ablation or plasma etching; Laser beam or plasma can not only remove part activation insulating barrier 120; Forming intaglio pattern P1 and blind hole H1, the while more can interrupt expose in intaglio pattern P1 with blind hole H1 in the chemical bond (chemical bond) of these first catalyst grains 122, with these first catalyst grains 122 of activation.
In addition, after the method with laser ablation formed blind hole H1, present embodiment can with the surperficial 112a of cleaning connection pad 112, remain in glue slag and the foreign matter on the surperficial 112a thereby remove to the blind hole H1 slag that removes photoresist.So, can keep or promote follow-up formed conductive pole 140 (seeing also shown in Fig. 1 D) and the connection pad 112 electric connection quality between the two, and then reduce between conductive pole 140 and the connection pad 112 and come in contact situation bad or that open circuit.
See also shown in Figure 1B and Fig. 1 C; Then; First catalyst grains 122 with these activation; Promptly originally exposed in intaglio pattern P1 with blind hole H1 in first catalyst grains 122, be replaced as a plurality of second catalyst grains 150, wherein first catalyst grains 122 of activation and the displacement between second catalyst grains 150 are to reach via displacement reaction.The method that first catalyst grains 122 of these activation is replaced as these second catalyst grains 150 can be that activation insulating barrier 120 is immersed in the chemical liquid that contains a plurality of charged particles, and these charged particles can be metal ion (for example palladium ion) or the metallic particles (for example tin palladium colloid) that is coated by ion cluster.
Hold the above, when activation insulating barrier 120 is immersed in the above-mentioned chemical liquid, charged particle can contact these activation and expose in intaglio pattern P1 with blind hole H1 in first catalyst grains 122, and produce displacement reactions with these first catalyst grains 122.In detail, the standard electrode potential of these second catalyst grains 150 is higher than the standard electrode potential of these first catalyst grains 122, to such an extent as to charged particle can produce displacement reaction with first catalyst grains 122 of activation.So, be able to be replaced as second catalyst grains 150 with the first interior catalyst grains 122 of blind hole H1 in the intaglio pattern P1.
After first catalyst grains 122 with these activation is replaced as these second catalyst grains 150; The conductor layer 110 that can be exposed blind hole H1, just connection pad 112, carry out microetch; With the surperficial 112a of cleaning connection pad 112, and then remove the impurity such as oxide of position at surperficial 112a.So, can keep or promote conductive pole 140 (seeing also shown in Fig. 1 D) and the connection pad 112 electric connection quality between the two of follow-up formation.In addition, when carrying out microetch, the erosion that second catalyst grains 150 that forms via displacement reaction can be resisted the etching soup, impel second catalyst grains 150 behind microetch, still can be retained in the intaglio pattern P1 with blind hole H1 in.
See also shown in Fig. 1 D, then, utilize these second catalyst grains 150, in intaglio pattern P1, form line layer 130, and in blind hole H1, form conductive pole 140.Particularly; The method that forms line layer 130 and conductive pole 140 has multiple; And in the present embodiment, the method that forms line layer 130 and conductive pole 140 can comprise chemical plating or chemical vapour deposition (CVD), and wherein this chemical plating can be described as electroless-plating (electroless plating) again.
When line layer 130 and conductive pole 140 are when forming with chemical plating; Activation insulating barrier 120 can be immersed in the chemical plating soup, and the chemical plating soup can contact with second catalyst grains 150, and produces chemical reaction; With the place that exposes in these second catalyst grains 150; Just in intaglio pattern P1 with blind hole H1 in, produce deposit, and then form line layer 130 and conductive pole 140.
When line layer 130 and conductive pole 140 are when forming with chemical vapour deposition (CVD); The reaction gas that chemical vapour deposition (CVD) is adopted is known from experience and second catalyst grains, 150 generation chemical reactions; Redox reaction (redox reaction) for example; Wherein in this chemical reaction, second catalyst grains 150 can be used as reactant (reactant) or catalytic materials (catalysis).So, line layer 130 is able to form with conductive pole 140.
In addition; What must explain is; In the two formation method of line layer 130 and conductive pole 140, can adopt the multiple technologies means to carry out, for example line layer 130 and conductive pole 140 the two can utilize chemical plating and these two kinds of technological means of chemical vapour deposition (CVD) to form simultaneously.For example, after second catalyst grains 150 forms, can carry out chemical vapour deposition (CVD) earlier, in intaglio pattern P1 with in the blind hole H1, to form Seed Layer (seed layer).Afterwards, carry out chemical plating, on Seed Layer, forming deposit, and then form line layer 130 and conductive pole 140.Hence one can see that, the method that forms line layer 130 and conductive pole 140 can comprise chemical plating and chemical vapour deposition (CVD) the two at least one of them.
In sum, wiring board of the present invention can supply at least one electronic component to install, and line layer can electrically connect electronic component, lets a plurality of electronic components be electrically connected to each other, and wherein electronic component for example is chip, passive device or active member.So, the signal of telecommunication can transmit between wiring board of the present invention and electronic component, lets electronic installations such as mobile phone, computer and digital camera, and electrical home appliances such as TV, washing machine and refrigerator can operate.
The above only is embodiments of the invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the method for above-mentioned announcement capable of using and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations; In every case be the content that does not break away from technical scheme of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention.

Claims (15)

1. the manufacturing approach of a wiring board is characterized in that comprising:
One composite base plate is provided, and this composite base plate comprises that a conductor layer and covers the activation insulating barrier of this conductor layer, and wherein this activation insulating barrier comprises many first catalyst grains;
On a upper surface of this activation insulating barrier, form an intaglio pattern and at least one blind hole that communicates with this intaglio pattern, the some of them first catalyst grains activation and expose in this intaglio pattern with this blind hole in, and this conductor layer of the local exposure of this blind hole;
First catalyst grains of those activation is replaced as a plurality of second catalyst grains; And
Utilize those second catalyst grains, in this intaglio pattern, form a line layer, and in this blind hole, form a conductive pole, wherein this conductive pole is connected between this conductor layer and this line layer.
2. the manufacturing approach of wiring board according to claim 1 is characterized in that the method that wherein forms this intaglio pattern and this blind hole and those first catalyst grains of activation comprises laser ablation, plasma etching or mechanical processing method.
3. wiring board according to claim 1 and manufacturing approach thereof, the method that it is characterized in that wherein forming this line layer and this conductive pole comprise chemical plating and chemical vapour deposition (CVD) the two at least wherein it
4. wiring board according to claim 1 and manufacturing approach thereof is characterized in that after forming this blind hole, more comprise this blind hole slag that removes photoresist.
5. wiring board according to claim 1 and manufacturing approach thereof is characterized in that after first catalyst grains with those activation is replaced as those second catalyst grains, comprise that more this conductor layer that this blind hole is exposed carries out microetch.
6. wiring board according to claim 1 and manufacturing approach thereof; It is characterized in that wherein that method that first catalyst grains with those activation is replaced as those second catalyst grains comprises is immersed in this activation insulating barrier in one chemical liquid; This chemical liquid comprises a plurality of charged particles, and those first catalyst grains that those charged particles are contacted with it produce displacement reaction.
7. wiring board according to claim 1 and manufacturing approach thereof is characterized in that wherein the material of those first catalyst grains is selected from one of group that is made up of zinc, copper, silver, nickel, cobalt, iron, manganese, cadmium, titanium, tin, lead, chromium, aluminium and molybdenum.
8. wiring board according to claim 7 and manufacturing approach thereof; It is characterized in that wherein the material of those second catalyst grains is selected from one of group that is made up of palladium, zinc, copper, silver, nickel, cobalt, iron, manganese, cadmium, titanium, tin, lead, chromium, aluminium and molybdenum; The material of those second catalyst grains is different from the material of those first catalyst grains, and the standard electrode potential of those second catalyst grains is higher than the standard electrode potential of those first catalyst grains.
9. wiring board according to claim 1 and manufacturing approach thereof it is characterized in that wherein said activation insulating barrier more comprises a macromolecular compound, and those first catalyst grains are distributed in this macromolecular compound.
10. wiring board according to claim 1 and manufacturing approach thereof is characterized in that wherein said composite base plate more comprises a body layer, and this conductor layer position is between this body layer and this activation insulating barrier.
11. a wiring board is characterized in that it comprises:
One conductor layer;
One activation insulating barrier covers this conductor layer, and comprises a plurality of first catalyst grains, and wherein this activation insulating barrier has an intaglio pattern and at least one blind hole that communicates with this intaglio pattern;
One line layer is configured in this intaglio pattern;
At least one conductive pole is configured in this blind hole, and is connected between this line layer and this conductor layer; And
A plurality of second catalyst grains; The position in this intaglio pattern with this blind hole in; And be fixedly arranged on this activation insulating barrier, wherein those second catalyst grains contact this line layer and this conductive poles, and the material of those second catalyst grains is different from the material of those first catalyst grains.
12. wiring board according to claim 11 is characterized in that more comprising a body layer, wherein this conductor layer position is between this body layer and this activation insulating barrier.
13. wiring board according to claim 11; It is characterized in that wherein said activation insulating barrier more comprises a macromolecular compound; Those first catalyst grains are distributed in this macromolecular compound, and those second catalyst grains are fixedly arranged on this macromolecular compound.
14. wiring board according to claim 11 is characterized in that wherein the material of those first catalyst grains is selected from one of group that is made up of zinc, copper, silver, nickel, cobalt, iron, manganese, cadmium, titanium, tin, lead, chromium, aluminium and molybdenum.
15. wiring board according to claim 14; It is characterized in that wherein the material of those second catalyst grains is selected from one of group that is made up of palladium, zinc, copper, silver, nickel, cobalt, iron, manganese, cadmium, titanium, tin, lead, chromium, aluminium and molybdenum; The material of those second catalyst grains is different from the material of those first catalyst grains, and the standard electrode potential of those second catalyst grains is higher than the standard electrode potential of those first catalyst grains.
CN201010586309.5A 2010-11-26 2010-12-08 Circuit board and manufacturing method thereof Expired - Fee Related CN102480847B (en)

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