CN102480242A - Push-pull converter and push-pull topology LED drive circuit - Google Patents

Push-pull converter and push-pull topology LED drive circuit Download PDF

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Publication number
CN102480242A
CN102480242A CN2010105644613A CN201010564461A CN102480242A CN 102480242 A CN102480242 A CN 102480242A CN 2010105644613 A CN2010105644613 A CN 2010105644613A CN 201010564461 A CN201010564461 A CN 201010564461A CN 102480242 A CN102480242 A CN 102480242A
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China
Prior art keywords
push
semiconductor
oxide
metal
pull
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Pending
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CN2010105644613A
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Chinese (zh)
Inventor
周明杰
邵贤辉
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Application filed by Oceans King Lighting Science and Technology Co Ltd, Shenzhen Oceans King Lighting Engineering Co Ltd filed Critical Oceans King Lighting Science and Technology Co Ltd
Priority to CN2010105644613A priority Critical patent/CN102480242A/en
Publication of CN102480242A publication Critical patent/CN102480242A/en
Pending legal-status Critical Current

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Abstract

The invention, which is suitable for the illumination circuit technology field, provides a push-pull converter and a push-pull topology LED drive circuit. According to the invention, the push-pull converter enables a leakage inductance peak to be effectively removed, wherein the leakage inductance peak is generated by a high frequency push-pull converter at the moment when an MOS tube Q1 or an MOS tube Q2 is turned off; and meanwhile, energy that is stored by the high frequency push-pull converter in a leakage inductance mode is feedbacked to an input power supply. Moreover, compared with a traditional RCD buffered network, the RCD buffered network of the push-pull converter enables electrical efficiency to be improved and the cost to be reduced.

Description

A kind of push-pull converter and push-pull topology led drive circuit
Technical field
The invention belongs to the lighting circuit technical field, relate in particular to a kind of push-pull converter and push-pull topology led drive circuit.
Background technology
Existing push-pull converter comprises high frequency push-pull transformer T1, switching tube Q1 and a switching tube Q2; In addition; Also comprise two RCD buffer networks forming respectively by capacitor C 1, resistance R 1, diode D1 and capacitor C 2, resistance R 2, diode D2, in order to reduce the due to voltage spikes that switching tube shutdown moment high frequency push-pull transformer T1 leakage inductance causes.
But the RCD buffer network of existing push-pull converter can consume the mode of high frequency push-pull transformer T1 leakage inductance energy stored through damped oscillation, makes that the electrical efficiency of power source integral is lower.
Summary of the invention
The purpose of the embodiment of the invention is to provide a kind of push-pull converter; The RCD buffer network existence meeting that is intended to solve in the existing push-pull converter consumes the mode of high frequency push-pull transformer leakage inductance energy stored through damped oscillation, makes the lower problem of electrical efficiency of power source integral.
The embodiment of the invention is to realize like this; A kind of push-pull converter; Said push-pull converter comprises metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 and high frequency push-pull transformer, and first end of the elementary winding of said high frequency push-pull transformer and the 3rd end connect the drain electrode of metal-oxide-semiconductor Q1 and the drain electrode of metal-oxide-semiconductor Q2 respectively, and the source electrode of the source electrode of said metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 is ground connection respectively; The second termination power input of the elementary winding of said high frequency push-pull transformer, said push-pull converter also comprises:
Be connected with the drain electrode of said metal-oxide-semiconductor Q1, drain electrode and the power input of metal-oxide-semiconductor Q2 respectively, be used to remove the leakage inductance spike clamp circuit of the leakage inductance spike that the high frequency push-pull transformer produces when metal-oxide-semiconductor Q1 or metal-oxide-semiconductor Q2 shutdown moment.
Another purpose of the embodiment of the invention is to provide a kind of push-pull topology led drive circuit; Said push-pull topology led drive circuit comprises like above-mentioned push-pull converter, rectification circuit, filter inductance and constant current chip; First end of the secondary winding of said high frequency push-pull transformer and the 3rd end connect the input of rectification circuit respectively; The output of said rectification circuit connects the input of constant current chip through filter inductance; The anode of the output termination LED load of said constant current chip, the second end ground connection of the secondary winding of said high frequency push-pull transformer.
In embodiments of the present invention; Push-pull converter can effectively remove the leakage inductance spike that the high frequency push-pull transformer produces when metal-oxide-semiconductor Q1 or metal-oxide-semiconductor Q2 shutdown moment; Simultaneously high frequency push-pull transformer leakage inductance energy stored is fed back to the input power supply; Compare traditional RCD buffer network, its electrical efficiency is higher, and cost is also lower.
Description of drawings
Fig. 1 is the structure chart of the push-pull converter that provides of the embodiment of the invention;
Fig. 2 is the drive waveforms figure of the embodiment of the invention metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 and the metal-oxide-semiconductor Q3 that provide;
Fig. 3 is the structure chart of the push-pull topology led drive circuit that provides of the embodiment of the invention.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Fig. 1 shows the structure of the push-pull converter that the embodiment of the invention provides, and for the ease of explanation, only shows the part relevant with the present invention.
Push-pull converter comprises metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 and high frequency push-pull transformer T1; First end 1 of the elementary winding of high frequency push-pull transformer T1 and the 3rd end 3 connect the drain electrode of metal-oxide-semiconductor Q1 and the drain electrode of metal-oxide-semiconductor Q2 respectively; The source electrode of the source electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 is ground connection respectively; Second end 2 of the elementary winding of high frequency push-pull transformer T1 meets power input Vin, and push-pull converter also comprises:
Be connected with the drain electrode of metal-oxide-semiconductor Q1, drain electrode and the power input Vin of metal-oxide-semiconductor Q2 respectively, be used to remove the leakage inductance spike clamp circuit 10 of the leakage inductance spike that high frequency push-pull transformer T1 produces when metal-oxide-semiconductor Q1 or metal-oxide-semiconductor Q2 shutdown moment.
As one embodiment of the invention, leakage inductance spike clamp circuit 10 comprises:
Diode D1, diode D2 and metal-oxide-semiconductor Q3;
The anode of diode D1 connects the drain electrode of metal-oxide-semiconductor Q1; The negative electrode of diode D1 connects the negative electrode of diode D2; The anode of diode D2 connects the drain electrode of metal-oxide-semiconductor Q2, and the drain electrode of metal-oxide-semiconductor Q3 connects the negative electrode of diode D1 and diode D2 simultaneously, and the source electrode of metal-oxide-semiconductor Q3 meets power input Vin.
As one embodiment of the invention, push-pull converter also comprises chip for driving U1, and three outputs of chip for driving U1 connect the grid of metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3 respectively.
Fig. 2 is the drive waveforms figure of the embodiment of the invention metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 and the metal-oxide-semiconductor Q3 that provide.
Fig. 3 shows the structure of the push-pull topology led drive circuit that the embodiment of the invention provides, and for the ease of explanation, only shows the part relevant with the present invention.
The embodiment of the invention also provides a push-pull topology led drive circuit; The push-pull topology led drive circuit comprises above-mentioned push-pull converter, rectification circuit 20, filter inductance L1 and constant current chip U2; First end 1 of the secondary winding of high frequency push-pull transformer T1 and the 3rd end 3 connect the input of rectification circuit 20 respectively; The output of rectification circuit 20 connects the input of constant current chip U2 through filter inductance L1; The anode of the output termination LED load of constant current chip U2, second end, 2 ground connection of the secondary winding of high frequency push-pull transformer T1.
Its operation principle is:
When metal-oxide-semiconductor Q1 or metal-oxide-semiconductor Q2 conducting; Energy is coupled to secondary by high frequency push-pull transformer T1 elementary; When metal-oxide-semiconductor Q1 signal became low level by high level, this moment, metal-oxide-semiconductor Q2 yet ended, i.e. the metal-oxide-semiconductor Q1 of place, dead band, not conductings of metal-oxide-semiconductor Q2; The elementary the first half of high frequency push-pull transformer T1 owing to inferior grade coupled reason; Energy only when metal-oxide-semiconductor Q1 conducting to secondary transmission energy, to metal-oxide-semiconductor Q1 by the time, the current potential of the elementary the first half of high frequency push-pull transformer T1 upper end has returned to input voltage; End along with metal-oxide-semiconductor Q1 is transferred to by conducting, because the electric current that flows through inductance can not suddenly change, the elementary winding of high frequency push-pull transformer T1 two ends will certainly produce very high inverse electromotive force and hinder reducing of electric current so; Because the magnetic line of force that the elementary winding of high frequency push-pull transformer T1 produces has a department not to be coupled to secondary winding through magnetic core, but directly turns back to elementary winding through air, this department's magnetic line of force is exactly a leakage field, i.e. the leakage inductance of transformer; The inverse electromotive force that is produced by leakage inductance when metal-oxide-semiconductor Q1 turn-offs is not owing to be coupled to secondary; Will be applied on metal-oxide-semiconductor Q1 and the metal-oxide-semiconductor Q2; If metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 add the protection damage that just will certainly be broken down by high-voltage, the present invention is as shown in Figure 3, between the drain electrode of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 and positive source, has added a diode D1, diode D2 and metal-oxide-semiconductor Q3; Like this at metal-oxide-semiconductor Q1 or metal-oxide-semiconductor Q2 shutdown moment by metal-oxide-semiconductor Q3 conducting; Just can the drain voltage of metal-oxide-semiconductor Q1 or metal-oxide-semiconductor Q2 be clamped down on input voltage (conduction voltage drop of diode and metal-oxide-semiconductor is very low, can ignore), avoid metal-oxide-semiconductor Q1; Metal-oxide-semiconductor Q2 is because high pressure and breakdown, the clamping action that the leakage inductance spike clamp circuit that Here it is diode D1, diode D2 and metal-oxide-semiconductor Q3 form is risen; The leakage inductance energy stored is fed back to the input power supply again simultaneously, has reduced the loss of circuit itself.
In embodiments of the present invention; Push-pull converter can effectively remove the leakage inductance spike that the high frequency push-pull transformer produces when metal-oxide-semiconductor Q1 or metal-oxide-semiconductor Q2 shutdown moment; Simultaneously high frequency push-pull transformer leakage inductance energy stored is fed back to the input power supply; Compare traditional RCD buffer network, its electrical efficiency is higher, and cost is also lower.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.

Claims (4)

1. push-pull converter; Said push-pull converter comprises metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 and high frequency push-pull transformer; First end of the elementary winding of said high frequency push-pull transformer and the 3rd end connect the drain electrode of metal-oxide-semiconductor Q1 and the drain electrode of metal-oxide-semiconductor Q2 respectively, and the source electrode of the source electrode of said metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 is ground connection respectively, the second termination power input of the elementary winding of said high frequency push-pull transformer; It is characterized in that said push-pull converter also comprises:
Be connected with the drain electrode of said metal-oxide-semiconductor Q1, drain electrode and the power input of metal-oxide-semiconductor Q2 respectively, be used to remove the leakage inductance spike clamp circuit of the leakage inductance spike that the high frequency push-pull transformer produces when metal-oxide-semiconductor Q1 or metal-oxide-semiconductor Q2 shutdown moment.
2. push-pull converter as claimed in claim 1 is characterized in that, said leakage inductance spike clamp circuit comprises:
Diode D1, diode D2 and metal-oxide-semiconductor Q3;
The anode of said diode D1 connects the drain electrode of metal-oxide-semiconductor Q1; The negative electrode of said diode D1 connects the negative electrode of diode D2; The anode of said diode D2 connects the drain electrode of metal-oxide-semiconductor Q2; The drain electrode of said metal-oxide-semiconductor Q3 connects the negative electrode of diode D1 and diode D2 simultaneously, and the source electrode of said metal-oxide-semiconductor Q3 connects power input.
3. push-pull converter as claimed in claim 2 is characterized in that said push-pull converter also comprises chip for driving, and three outputs of said chip for driving connect the grid of metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3 respectively.
4. push-pull topology led drive circuit; It is characterized in that; Said push-pull topology led drive circuit comprises like each described push-pull converter of claim 1-3, rectification circuit, filter inductance and constant current chip; First end of the secondary winding of said high frequency push-pull transformer and the 3rd end connect the input of rectification circuit respectively; The output of said rectification circuit connects the input of constant current chip, the anode of the output termination LED load of said constant current chip, the second end ground connection of the secondary winding of said high frequency push-pull transformer through filter inductance.
CN2010105644613A 2010-11-26 2010-11-26 Push-pull converter and push-pull topology LED drive circuit Pending CN102480242A (en)

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Application Number Priority Date Filing Date Title
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103874295A (en) * 2014-03-17 2014-06-18 杨岳毅 Single-level LED driving power supply
CN108649938A (en) * 2018-07-27 2018-10-12 深圳英飞源技术有限公司 A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike
CN113098293A (en) * 2021-05-21 2021-07-09 深圳市杰能科技有限公司 Active clamp converter circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2468221Y (en) * 1999-10-04 2001-12-26 毛燦豪 Switch type power supply changeover device with improved non-loss buffer network
US20100244726A1 (en) * 2008-12-07 2010-09-30 Melanson John L Primary-side based control of secondary-side current for a transformer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2468221Y (en) * 1999-10-04 2001-12-26 毛燦豪 Switch type power supply changeover device with improved non-loss buffer network
US20100244726A1 (en) * 2008-12-07 2010-09-30 Melanson John L Primary-side based control of secondary-side current for a transformer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103874295A (en) * 2014-03-17 2014-06-18 杨岳毅 Single-level LED driving power supply
CN103874295B (en) * 2014-03-17 2016-06-08 杨岳毅 Single-stage type LED driving power
CN108649938A (en) * 2018-07-27 2018-10-12 深圳英飞源技术有限公司 A kind of metal-oxide-semiconductor driving circuit inhibiting negative drive voltage spike
CN113098293A (en) * 2021-05-21 2021-07-09 深圳市杰能科技有限公司 Active clamp converter circuit

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Application publication date: 20120530