CN102479890A - Forming method of optical platform - Google Patents
Forming method of optical platform Download PDFInfo
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- CN102479890A CN102479890A CN2010105682742A CN201010568274A CN102479890A CN 102479890 A CN102479890 A CN 102479890A CN 2010105682742 A CN2010105682742 A CN 2010105682742A CN 201010568274 A CN201010568274 A CN 201010568274A CN 102479890 A CN102479890 A CN 102479890A
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Abstract
The invention provides a forming method of an optical platform. The method comprises the following steps: providing a semiconductor substrate, wherein the semiconductor substrate is provided with an upper surface and a lower surface which are arranged oppositely; performing dry etching to form a groove on the upper surface of the semiconductor substrate and form a through hole in the semiconductor substrate at the bottom of the groove, wherein the through hole penetrates through the semiconductor substrate; oxidizing the semiconductor substrate to form oxidation films respectively on the upper surface, the lower surface and the side wall of the semiconductor substrate as well as the surfaces of the groove and the through hole; and forming a metal layer to cover the oxidation films of the upper surface and the lower surface of the semiconductor substrate as well as the oxidation films on the surfaces of the groove and the through hole. According to the invention, the process is relatively simple, is convenient for industrial application and has stronger controllability.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of formation method of optical table.
Background technology
(Si Optical Bench, SiOB) system are the integrated optical element platforms of a kind of height to the silicon optical table.LED (lighting emitting diode) more and more attract people's attention, and LED is applied in also on the silicon optical table, is used to provide light source because it has low in power consumption.In order to improve the luminous efficiency that is applied in the LED on the silicon optical table, prior art forms groove on the silicon optical table, led chip is arranged in the groove, utilizes the secondary optics efficient of the optically focused effect lifting LED of groove.
Fig. 1 Fig. 6 is the cross-sectional view of formation method of a kind of silicon optical table of prior art, and with reference to figure 1～Fig. 6, the formation method of the silicon optical table of prior art comprises:
With reference to Figure 11, silicon substrate 10 is provided, the said silicon substrate 10 of thermal oxidation; Surface at said silicon substrate 10 forms silica 11; Said surface comprises upper surface, lower surface and four sides, owing to be profile, only illustrates two sides among the figure; And because accompanying drawing is the part of silicon substrate 10, so do not illustrate the silicon dioxide of side.
With reference to figure 2; Upper surface at said silica 11 forms the first patterned photoresist layer 121; Photoresist layer 122, the first patterned photoresist layers 121 of lower surface formation second graphical define the figure of groove, and the photoresist layer 122 of second graphical defines the figure of through hole.
With reference to figure 3, the silicon dioxide that utilizes buffer oxide silicon etch solution (BOE) etching not covered by the photoresist layer 122 of the first patterned photoresist layer 121 and second graphical.Remove the photoresist layer 122 of the first patterned photoresist layer 121 and second graphical afterwards.
With reference to figure 4, the silicon substrate 10 that utilizes potassium hydroxide (KOH) solution etching not covered by silica 11 forms groove 13, the through hole 15 of device mesa 14 and device mesa 14 both sides.Wherein, device mesa 14 is used to be provided with LED, and groove 13 can promote the secondary optics efficient of LED as the optically focused bucket, and through hole 15 can be used for being provided with radiating tube, is used for the heat radiation of LED.
With reference to figure 5; The said silicon substrate 10 of thermal oxidation forms silica 1 11 at the sidewall of through hole 15, thereby on all surfaces of whole silicon substrate; The sidewall, the bottom that comprise groove 13; The sidewall of through hole 15 and the upper and lower surfaces of silicon substrate, side all are formed with silicon dioxide, this silicon dioxide as dielectric layer after during plated metal, silicon substrate 10 and metal are isolated.
Ginseng Fig. 6; In the sidewall of groove 13 and bottom, the sidewall of through hole 15, the upper and lower surfaces plated metal of silicon substrate 10; Form metallic film 16, the technology that this metallic film 16 can be used for is afterwards carried out etching formation metal line, as the interconnection line between the electronic component.
Groove in the silicon optical table that above method forms mainly utilizes KOH solution to carry out wet etching and forms, and the bottom of the groove of formation and the angle of sidewall are about 54.7 °, and this angle can well promote the secondary optics efficient of LED.But said method need carry out etching respectively to the upper and lower surfaces of silicon substrate 10, and technology is comparatively complicated.
Application number discloses a kind of manufacture method of optical table for the one Chinese patent application of " 200410048116.9 ", yet does not also solve above-described technical problem.
Summary of the invention
The problem that the present invention solves is that prior art adopts the method for two sides etching to form optical table, and technology is comparatively complicated.
For addressing the above problem, the present invention provides a kind of formation method of optical table, comprising:
Semiconductor substrate is provided, and said Semiconductor substrate has relative upper surface and lower surface;
Use dry etching that the upper surface of said Semiconductor substrate is carried out etching, the upper surface formation groove in said Semiconductor substrate forms through hole in the Semiconductor substrate of said bottom portion of groove, and said through hole runs through said Semiconductor substrate;
Said Semiconductor substrate is carried out oxidation, and at upper surface, lower surface and the sidewall of said Semiconductor substrate, and the surface of said groove and through hole forms oxide-film;
Form metal level, cover the upper surface of said Semiconductor substrate, the oxide-film of lower surface, and the oxide-film of said groove and through-hole surfaces.
Optional, said upper surface in said Semiconductor substrate forms groove, in the Semiconductor substrate of said bottom portion of groove, forms through hole and comprises:
Upper surface to said Semiconductor substrate carries out first dry etching, forms opening;
The upper surface of said Semiconductor substrate and the Semiconductor substrate of said open bottom are carried out second dry etching, form groove, and make said opening run through said Semiconductor substrate formation through hole, said through hole is arranged in the Semiconductor substrate of said bottom portion of groove.
Optional, said upper surface to said Semiconductor substrate carries out first dry etching, forms opening and comprises:
Carry out graphically defining the figure of said opening at the upper surface formation hard mask layer of said Semiconductor substrate and to it;
With said hard mask layer after graphical is mask, and said Semiconductor substrate is carried out first dry etching, forms said opening;
Remove said hard mask layer after graphical.
Optional, the material of said hard mask layer is silica, silicon nitride or their laminated construction.
Optional, the thickness of said hard mask layer be 8000
to 30000
Optional, said the upper surface of said Semiconductor substrate and the Semiconductor substrate of said open bottom are carried out second dry etching, form groove, and make said opening run through said Semiconductor substrate to form through hole and comprise:
Carry out graphically defining the figure of groove at the upper surface formation photoresist layer of said Semiconductor substrate and to it;
With said photoresist layer after graphical is that mask carries out second dry etching to said Semiconductor substrate, forms groove, and makes said opening run through said Semiconductor substrate to form through hole;
Remove said photoresist layer after graphical.
Optional, the reacting gas in said second dry etching comprises sulphur hexafluoride (SF
6) and hydrogen chloride (HCl), reaction pressure is that 5mTorr (millitorr) is to 200mTorr.
Optional, the angle that the sidewall of said groove departs from the bottom surface is 100 °～135 °.
Optional, the reacting gas in said second dry etching comprises sulphur hexafluoride (SF
6) and perfluorobuttene (C
4F
8), reaction pressure is 5mTorr to 200mTorr.
Optional, the angle that the sidewall of said groove departs from the bottom surface is 90 °～115 °.
Optional, the reacting gas in said second dry etching comprises sulphur hexafluoride (SF
6), Nitrogen trifluoride (NF
3), hydrogen bromide (HBr) and oxygen (O
2), wherein, SF
6Flow be 5sccm to 10sccm, NF
3Flow be 70sccm to 200sccm, the flow of HBr is 70sccm to 150sccm, O
2Flow be 5sccm to 15sccm, reaction pressure is 50mTorr to 150mTorr, etching power is 500W to 1000W.
Optional, the angle that the sidewall of said groove departs from the bottom surface is 120 °～130 °.
Optional, said upper surface in said Semiconductor substrate forms groove, in the Semiconductor substrate of said bottom portion of groove, forms through hole and comprises:
Upper surface in said Semiconductor substrate carries out the 3rd dry etching, forms said groove;
Semiconductor substrate to said bottom portion of groove is carried out the 4th dry etching, forms said through hole, and said through hole runs through said Semiconductor substrate.
Optional, the reacting gas in said the 3rd dry etching comprises SF
6And HCl, reaction pressure is 5mTorr to 200mTorr.
Optional, the angle that the sidewall of said groove departs from the bottom surface is 100 °～135 °.
Optional, the reacting gas in said the 3rd dry etching comprises SF
6And C
4F
8, reaction pressure is 5mTorr to 200mTorr.
Optional, the angle that the sidewall of said groove departs from the bottom surface is 90 °～115 °.
Optional, the reacting gas in said the 3rd dry etching comprises SF
6, NF
3, HBr and O
2, wherein, SF
6Flow be 5sccm to 10sccm, NF
3Flow be 70sccm to 200sccm, the flow of HBr is 70sccm to 150sccm, O
2Flow be 5sccm to 15sccm, reaction pressure is 50mTorr to 150mTorr, etching power is 500W to 1000W.
Optional, the angle that the sidewall of said groove departs from the bottom surface is 120 °～130 °.
Optional, the material of said metal level is selected from gold (Au), platinum (Pt), titanium (Ti) or their combination in any.
Compared with prior art, the present invention has the following advantages:
The present technique scheme utilizes dry etching that etching is carried out on a surface of Semiconductor substrate, forms the groove and the through hole of optical table, compares with the two sides lithographic method of prior art, and its technology is comparatively simple, is convenient to commercial Application.
In addition, can adjust the recess sidewall of formation and the angle of bottom, compare, have higher controllability, help optimizing the secondary optics efficient of LED, reduce light energy losses with wet etching through the gas pressure intensity in the adjustment dry etching.
Description of drawings
Fig. 1 to Fig. 6 is the profile of intermediate structure of formation method of a kind of silicon optical table of prior art;
Fig. 7 is the schematic flow sheet of the formation method of embodiment of the invention optical table;
Fig. 8 to Figure 15 is the profile of intermediate structure of the formation method of embodiment of the invention optical table.
Embodiment
Prior art is carried out etching forming optical table to the two sides of substrate, and lithographic method is main with wet etching, and process complexity is higher, and controllability is relatively poor.
The present technique scheme utilizes dry etching that etching is carried out on a surface of Semiconductor substrate, forms the groove and the through hole of optical table, compares with the two sides lithographic method of prior art, and its technology is comparatively simple, is convenient to commercial Application.
In addition, can adjust the recess sidewall of formation and the angle of bottom, compare, have higher controllability, help optimizing the secondary optics efficient of LED, reduce light energy losses with wet etching through the gas pressure intensity in the adjustment dry etching.
In order to make those skilled in the art can better understand the present invention, specify embodiment of the present invention below in conjunction with accompanying drawing.
Set forth detail in the following description so that make much of the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention does not receive the restriction of following disclosed embodiment.
Fig. 7 is the schematic flow sheet of formation method of the optical table of the embodiment of the invention, with reference to figure 7, comprising:
Step S21 provides Semiconductor substrate, and said Semiconductor substrate has relative upper surface and lower surface;
Step S22 uses dry etching that the upper surface of said Semiconductor substrate is carried out etching, and the upper surface formation groove in said Semiconductor substrate forms through hole in the Semiconductor substrate of said bottom portion of groove, and said through hole runs through said Semiconductor substrate;
Step S23 carries out oxidation to said Semiconductor substrate, and at upper surface, lower surface and the sidewall of said Semiconductor substrate, and the surface of said groove and through hole forms oxide-film;
Step S24 forms metal level, covers the upper surface of said Semiconductor substrate, the oxide-film of lower surface, and the oxide-film of said groove and through-hole surfaces.
Fig. 8 to Figure 15 is the profile of intermediate structure of formation method of the optical table of the embodiment of the invention, below in conjunction with Fig. 7 and Fig. 8 to Figure 15 present embodiment is elaborated.
In conjunction with Fig. 7 and Fig. 8, execution in step S21 provides Semiconductor substrate, and said Semiconductor substrate has relative upper surface and lower surface.Concrete, Semiconductor substrate 20 is provided, said Semiconductor substrate 20 has relative upper surface 20a and lower surface 20b.Said Semiconductor substrate 20 can be silicon-Germanium substrate, III-V group element compound substrate (like GaAs, indium phosphide, gallium nitride etc.), silicon carbide substrates or its laminated construction, is preferably silicon substrate in the present embodiment.
In conjunction with Fig. 7 and Fig. 9 to Figure 13; Execution in step S22 uses dry etching that the upper surface of said Semiconductor substrate is carried out etching, at the upper surface formation groove of said Semiconductor substrate; In the Semiconductor substrate of said bottom portion of groove, form through hole, said through hole runs through said Semiconductor substrate.With reference to Figure 13; In the present embodiment; Use dry etching that the upper surface 20a of said Semiconductor substrate is carried out etching; Upper surface 20a in said Semiconductor substrate 20 forms groove 25, in the Semiconductor substrate 20 of said groove 25 bottoms, forms through hole 23a, is elaborated with reference to figure 9 to Figure 13 below.
At first with reference to figure 9; Form hard mask layer 21 and photoresist layer 22 successively at the upper surface 20a of said Semiconductor substrate 20; And said photoresist layer 22 carried out graphically defining the figure of opening, the position of the figure of said opening and pattern and said through hole 23a are consistent.The material of said hard mask layer 21 can be silica, silicon nitride or their laminated construction; Its formation method can be a chemical vapor deposition (CVD); Its thickness be 8000
to 30000
since follow-up dry etching process can cause loss to hard mask layer 21; Above-mentioned thickness can avoid hard mask layer 21 in the dry etching process, to be removed by whole losses, helps the figure pattern that guarantees that dry etching forms.The formation method of said photoresist layer 22 can be spin coating, spraying etc., and its graphic method can comprise exposure, development, photographic fixing etc.
With reference to Figure 10; With said photoresist layer after graphical is mask, said hard mask layer 21 is carried out etching, on figure transfer to the said hard mask layer 21 with said opening; Remove said photoresist layer afterwards, the process of etching can be dry etching, wet etching etc.
With reference to Figure 11, be mask with said hard mask layer after graphical, said Semiconductor substrate 20 is carried out first dry etching, form opening 23, the hard mask layer removal after afterwards will be said graphical exposes the upper surface 20a of said Semiconductor substrate 20.The etching gas that adopts in first dry etching mainly comprises hydrogen bromide, or commonly used other are used for the reacting gas of etch silicon in the prior art.
With reference to Figure 12, on the upper surface 20a of said Semiconductor substrate 20, form photoresist layer 24 and graphical, define the figure of groove.In the present embodiment, the figure of said groove has covered two adjacent openings 23.
With reference to Figure 13; With said photoresist layer 24 after graphical is that mask carries out second dry etching to said Semiconductor substrate 20; Form groove 25; And make said opening run through said Semiconductor substrate 20 to form through hole 23a, photoresist layer 24 removals after afterwards will be said graphical, the method for removal can be ashing (ashing) etc.Form device mesa between the adjacent through hole 23a in said groove 25 bottoms, be used to place optical devices such as LED.
Reacting gas in said second dry etching comprises SF
6And HCl, reaction pressure is 5mTorr to 200mTorr, can adjust the bottom surface of said groove 25 and the angle d between the sidewall through the reaction pressure of controlling in second dry etching.The angle D that adopts the sidewall of the groove 25 that above-mentioned reacting gas etching forms to depart from the bottom surface is 100 °～135 °, and the sidewall of promptly said groove 25 and the angle d between the bottom surface are 45 °～80 °.
According to the difference of embodiment, the reacting gas in said second dry etching comprises SF
6And C
4F
8, reaction pressure is 5mTorr to 200mTorr, can adjust the bottom surface of said groove 25 and the angle d between the sidewall through the reaction pressure of controlling in second dry etching.The angle D that adopts the sidewall of the groove 25 that above-mentioned reacting gas etching forms to depart from the bottom surface is 90 °～115 °, and the sidewall of promptly said groove 25 and the angle d between the bottom surface are 65 °～90 °.
As a preferred embodiment, the reacting gas described in the present embodiment in second dry etching comprises SF
6, NF
3, HBr and O
2, wherein, SF
6Flow be 5sccm to 10sccm, NF
3Flow be 70sccm to 200sccm, the flow of HBr is 70sccm to 150sccm, O
2Flow be 5sccm to 15sccm, reaction pressure is 50mTorr to 150mTorr, etching power is 500W to 1000W.Similarly; Can adjust the bottom surface of groove 25 and the angle d between the sidewall through the reaction pressure of adjusting in second dry etching; The angle D that adopts the sidewall of the groove 25 that above-mentioned etching gas etching forms to depart from the bottom surface is 120 °～130 °, and the sidewall of promptly said groove 25 and the angle d between the bottom surface are 50 °～60 °.
Need to prove that in the second dry etching process, the sidewall and the bottom surface of the groove 25 of formation tilt, also tilt each other between the sidewall of the through hole 23a after making said etching run through and the bottom surface, but this does not influence the function and the use of optical table.
Said groove 25 and through hole 23a are to use dry etching that the upper surface 20a etching of said Semiconductor substrate 20 is formed, because etching process only relates to independent upper surface 20a, technology is comparatively simple, is convenient to commercial Application.And can adjust the sidewall of the groove 25 that etching forms and the angle between the bottom surface through the reaction pressure of control in the dry etching, and to compare with wet etching, controllability is stronger, helps optimizing the secondary optics efficient of LED, reduces energy loss.
In conjunction with Fig. 7 and Figure 14, execution in step S23 carries out oxidation to said Semiconductor substrate, and at upper surface, lower surface and the sidewall of said Semiconductor substrate, and the surface of said groove and through hole forms oxide-film.Concrete, said Semiconductor substrate 20 is carried out oxidation, at upper surface 20a, lower surface 20b and the sidewall of said Semiconductor substrate 20, and the surface of said groove 25 and through hole 23a forms oxide-film 26.The method of said oxidation can be thermal oxidation, and temperature is 1100 ℃, and said oxide-film 26 covers upper surface 20a, lower surface 20b and the sidewall of said Semiconductor substrate 20, and covers the bottom surface and the sidewall of said groove 25, and the sidewall of said through hole 23a.
In conjunction with Fig. 7 and Figure 15, execution in step S24 forms metal level, covers the upper surface of said Semiconductor substrate, the oxide-film of lower surface, and the oxide-film of said groove and through-hole surfaces.Concrete, form metal level 27, cover the upper surface 20a of said Semiconductor substrate 20, the oxide-film 26 of lower surface 20b, and the oxide-film 26 on said groove 25 and through hole 23a surface.The material of said metal level 27 is selected from gold, platinum, and titanium one of them or theys' combination in any, its formation method can be a sputtering method.
The foregoing description uses first dry etching at first to form opening at the upper surface of Semiconductor substrate; Form groove through second dry etching more afterwards; And make said opening run through said Semiconductor substrate formation through hole; In other embodiments of the invention, also can form groove earlier and form through hole again, specifically comprise: use the 3rd be dry-etched in said Semiconductor substrate upper surface form groove; Afterwards the Semiconductor substrate of said bottom portion of groove is carried out the 4th dry etching, form the through hole that runs through Semiconductor substrate.The pattern of the groove that forms after reaction conditions such as the reacting gas of said the 3rd dry etching and the etching is consistent with second dry etching in the previous embodiment, repeats no more here.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical scheme of the present invention according to technical spirit of the present invention.
Claims (20)
1. the formation method of an optical table is characterized in that, comprising:
Semiconductor substrate is provided, and said Semiconductor substrate has relative upper surface and lower surface;
Use dry etching that the upper surface of said Semiconductor substrate is carried out etching, the upper surface formation groove in said Semiconductor substrate forms through hole in the Semiconductor substrate of said bottom portion of groove, and said through hole runs through said Semiconductor substrate;
Said Semiconductor substrate is carried out oxidation, and at upper surface, lower surface and the sidewall of said Semiconductor substrate, and the surface of said groove and through hole forms oxide-film;
Form metal level, cover the upper surface of said Semiconductor substrate, the oxide-film of lower surface, and the oxide-film of said groove and through-hole surfaces.
2. the formation method of optical table according to claim 1 is characterized in that, said upper surface in said Semiconductor substrate forms groove, in the Semiconductor substrate of said bottom portion of groove, forms through hole and comprises:
Upper surface to said Semiconductor substrate carries out first dry etching, forms opening;
The upper surface of said Semiconductor substrate and the Semiconductor substrate of said open bottom are carried out second dry etching, form groove, and make said opening run through said Semiconductor substrate formation through hole, said through hole is arranged in the Semiconductor substrate of said bottom portion of groove.
3. the formation method of optical table according to claim 2 is characterized in that, said upper surface to said Semiconductor substrate carries out first dry etching, forms opening and comprises:
Carry out graphically defining the figure of said opening at the upper surface formation hard mask layer of said Semiconductor substrate and to it;
With said hard mask layer after graphical is mask, and said Semiconductor substrate is carried out first dry etching, forms said opening;
Remove said hard mask layer after graphical.
4. the formation method of optical table according to claim 3 is characterized in that, the material of said hard mask layer is silica, silicon nitride or their laminated construction.
5. the formation method of optical table according to claim 3; It is characterized in that, the thickness of said hard mask layer be 8000
to 30000
6. the formation method of optical table according to claim 2; It is characterized in that; Said the upper surface of said Semiconductor substrate and the Semiconductor substrate of said open bottom are carried out second dry etching, form groove, and make said opening run through said Semiconductor substrate to form through hole and comprise:
Carry out graphically defining the figure of groove at the upper surface formation photoresist layer of said Semiconductor substrate and to it;
With said photoresist layer after graphical is that mask carries out second dry etching to said Semiconductor substrate, forms groove, and makes said opening run through said Semiconductor substrate to form through hole;
Remove said photoresist layer after graphical.
7. according to the formation method of claim 2 or 6 described optical tables, it is characterized in that the reacting gas in said second dry etching comprises SF
6And HCl, reaction pressure is 5mTorr to 200mTorr.
8. the method for formation optical table according to claim 7 is characterized in that, the angle that the sidewall of said groove departs from the bottom surface is 100 °～135 °.
9. according to the formation method of claim 2 or 6 described optical tables, it is characterized in that the reacting gas in said second dry etching comprises SF
6And C
4F
8, reaction pressure is 5mTorr to 200mTorr.
10. the formation method of optical table according to claim 9 is characterized in that, the angle that the sidewall of said groove departs from the bottom surface is 90 °～115 °.
11. the formation method according to claim 2 or 6 described optical tables is characterized in that, the reacting gas in said second dry etching comprises SF
6, NF
3, HBr and O
2, wherein, SF
6Flow be 5sccm to 10sccm, NF
3Flow be 70sccm to 200sccm, the flow of HBr is 70sccm to 150sccm, O
2Flow be 5sccm to 15sccm, reaction pressure is 50mTorr to 150mTorr, etching power is 500W to 1000W.
12. the formation method of optical table according to claim 11 is characterized in that, the angle that the sidewall of said groove departs from the bottom surface is 120 °～130 °.
13. the formation method of optical table according to claim 1 is characterized in that, said upper surface in said Semiconductor substrate forms groove, in the Semiconductor substrate of said bottom portion of groove, forms through hole and comprises:
Upper surface in said Semiconductor substrate carries out the 3rd dry etching, forms said groove;
Semiconductor substrate to said bottom portion of groove is carried out the 4th dry etching, forms said through hole, and said through hole runs through said Semiconductor substrate.
14. the formation method of optical table according to claim 13 is characterized in that, the reacting gas in said the 3rd dry etching comprises SF
6And HCl, reaction pressure is 5mTorr to 200mTorr.
15. the method for formation optical table according to claim 14 is characterized in that, the angle that the sidewall of said groove departs from the bottom surface is 100 °～135 °.
16. the formation method of optical table according to claim 13 is characterized in that, the reacting gas in said the 3rd dry etching comprises SF
6And C
4F
8, reaction pressure is 5mTorr to 200mTorr.
17. the formation method of optical table according to claim 16 is characterized in that, the angle that the sidewall of said groove departs from the bottom surface is 90 °～115 °.
18. the formation method of optical table according to claim 13 is characterized in that, the reacting gas in said the 3rd dry etching comprises SF
6, NF
3, HBr and O
2, wherein, SF
6Flow be 5sccm to 10sccm, NF
3Flow be 70sccm to 200sccm, the flow of HBr is 70sccm to 150sccm, O
2Flow be 5sccm to 15sccm, reaction pressure is 50mTorr to 150mTorr, etching power is 500W to 1000W.
19. the formation method of optical table according to claim 18 is characterized in that, the angle that the sidewall of said groove departs from the bottom surface is 120 °～130 °.
20. the formation method of optical table according to claim 1 is characterized in that the material of said metal level is selected from gold, platinum, titanium one of them or theys' combination in any.
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|---|---|---|---|
| CN201010568274.2A CN102479890B (en) | 2010-11-30 | 2010-11-30 | Forming method of optical platform |
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|---|---|---|---|
| CN201010568274.2A CN102479890B (en) | 2010-11-30 | 2010-11-30 | Forming method of optical platform |
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| CN102479890B CN102479890B (en) | 2014-07-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115440653A (en) * | 2022-04-02 | 2022-12-06 | 合肥本源量子计算科技有限责任公司 | Preparation method of semiconductor structure, semiconductor structure and superconducting quantum device |
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|---|---|---|---|---|
| CN1851945A (en) * | 2006-04-27 | 2006-10-25 | 矽畿科技股份有限公司 | Packing substrate structure of optical diode and preparing method |
| CN101257067A (en) * | 2007-02-28 | 2008-09-03 | 探微科技股份有限公司 | LED structure and method for manufacturing the same |
| CN101393950A (en) * | 2007-09-17 | 2009-03-25 | 兆立光电有限公司 | Flip encapsulation manufacturing method for LED |
-
2010
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851945A (en) * | 2006-04-27 | 2006-10-25 | 矽畿科技股份有限公司 | Packing substrate structure of optical diode and preparing method |
| CN101257067A (en) * | 2007-02-28 | 2008-09-03 | 探微科技股份有限公司 | LED structure and method for manufacturing the same |
| CN101393950A (en) * | 2007-09-17 | 2009-03-25 | 兆立光电有限公司 | Flip encapsulation manufacturing method for LED |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115440653A (en) * | 2022-04-02 | 2022-12-06 | 合肥本源量子计算科技有限责任公司 | Preparation method of semiconductor structure, semiconductor structure and superconducting quantum device |
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